MEMS sensor and electronic atomization device

Abstract

The utility model discloses an MEMS sensor and an electronic atomization device. The MEMS sensor comprises a substrate, a base plate, a temperature measuring element and a conductive contact. The substrate is provided with a first surface and a second surface which are opposite; the first surface is provided with a groove, the second surface is provided with a Wheatstone bridge circuit, and a bridge arm of the Wheatstone bridge circuit comprises a piezoresistor; the substrate covers the groove to form a sealed cavity; the temperature measuring element is arranged on the inner surface of the sealing cavity; the conductive contact is arranged on the substrate and / or the base plate and is electrically connected with the temperature measuring element; wherein the temperature measuring element has a resistance temperature coefficient. In this way, the temperature drift phenomenon can be greatly eliminated, and therefore the detection precision of the MEMS sensor in the embodiment is improved.

Description

Technical Field

[0001] The present application relates to the field of sensor technology, and in particular to a MEMS sensor and an electronic atomization device. Background Art

[0002] In recent years, with the rapid development of MEMS (Micro-Electro-Mechanical System) technology, MEMS technology has been widely used in the field of sensors. Traditional MEMS piezoresistive pressure sensors are based on the single-crystal silicon piezoresistive effect and usually use a Wheatstone bridge structure to convert external pressure signals into corresponding electrical signals. By measuring the value of the electrical signal, the size of the external pressure signal can be known. However, this type of MEMS piezoresistive pressure sensor has the problem of inaccurate detection. Utility Model Content

[0003] The present application provides a MEMS sensor and an electronic atomization device, which are used to solve the problem of inaccurate detection of MEMS sensors.

[0004] According to the first aspect of the present application, some embodiments of the present application provide a MEMS sensor, including a substrate, a baseplate, a temperature measuring element and a conductive contact; the substrate has a first surface and a second surface relative to each other; the first surface has a groove, the second surface has a Wheatstone bridge circuit, and the bridge arm of the Wheatstone bridge circuit includes a varistor; the substrate covers the groove to form a sealed cavity; the temperature measuring element is arranged on the inner surface of the sealed cavity; the conductive contact is arranged on the substrate and / or the baseplate, and is electrically connected to the temperature measuring element; wherein the temperature measuring element has a resistance temperature coefficient.

[0005] In some of the embodiments, the MEMS sensor further includes a force-applying element, which is at least partially disposed on a bottom wall of the groove; the force-applying element is configured to apply a force to the bottom wall of the groove toward or away from the substrate when powered on.

[0006] In some embodiments, the force-applying element is at least partially configured as the temperature measuring element; the force-applying element includes a first electrode plate and a second electrode plate; the first electrode plate is arranged on the bottom wall of the groove; the second electrode plate is arranged on the substrate and is spaced apart from the first electrode plate; the conductive contact is electrically connected to at least one of the first electrode plate and the second electrode plate; wherein the first electrode plate and the second electrode plate are configured to repel or attract each other when energized; the first electrode plate is a metal layer with a temperature coefficient of resistance and serves as the temperature measuring element; the conductive contact includes a first conductive contact and a second conductive contact electrically connected to the first electrode plate, respectively.

[0007] In some embodiments, the first plate and the second plate form a parallel plate capacitor, and the conductive contact further includes a third conductive contact electrically connected to the second plate.

[0008] In some embodiments, the first electrode plate is arranged on the bottom surface of the groove; the second electrode plate is arranged on the surface of the substrate exposed to the sealed cavity; the substrate has a first conductive hole, a second conductive hole and a third conductive hole; the first conductive contact is arranged on the surface of the substrate away from the substrate and is electrically connected to one end of the first electrode plate through the first conductive hole, the second conductive contact is arranged on the surface of the substrate away from the substrate and is electrically connected to the other end of the first electrode plate through the second conductive hole, and the third conductive contact is arranged on the surface of the substrate away from the substrate and is electrically connected to the second electrode plate through the third conductive hole.

[0009] In some embodiments, one of the first pole plate and the second pole plate includes a permanent magnetic material, and the other is an electromagnet; the conductive contact is electrically connected to the electromagnet for changing the polarity of the electromagnet; or the first pole plate and the second pole plate are both electromagnets; the conductive contact is electrically connected to the first pole plate and the second pole plate, respectively, for changing the polarity of the electromagnet.

[0010] In some embodiments, the force-applying element includes a thermodeformable material layer and a conductive heating layer arranged on the bottom wall of the groove; the thermodeformable material layer is configured to be able to deform under heating, thereby applying a force to the bottom wall of the groove closer to or away from the substrate; wherein the conductive heating layer is a metal layer with a temperature coefficient of resistance and serves as the temperature measuring element; the conductive contact includes a first conductive contact and a second conductive contact respectively electrically connected to the conductive heating layer.

[0011] In some embodiments, the conductive heat-generating layer is disposed between the thermally deformable material layer and the bottom wall of the groove.

[0012] In some embodiments, the conductive heat-generating layer surrounds the thermal deformation material layer and is disposed on the bottom wall of the groove.

[0013] According to the second aspect of the present application, some embodiments of the present application provide an electronic atomization device, comprising a liquid storage unit, an atomization component, a MEMS sensor and a control circuit; the liquid storage unit is used to store an aerosol generating matrix; the atomization component is used to atomize the aerosol generating matrix; the MEMS sensor is the MEMS sensor provided in any of the above embodiments, which is arranged on the air flow channel of the electronic atomization device, and is used to detect the air pressure changes in the air flow channel; the control circuit is electrically connected to the atomization component and the MEMS sensor, respectively; the control circuit is used to control the operation of the atomization component according to the air pressure changes detected by the MEMS sensor; wherein, the control circuit is also used to compensate for the temperature drift of the MEMS sensor according to the temperature of the MEMS sensor detected by the temperature measuring element.

[0014] According to the MEMS sensor of the above embodiment, in the MEMS sensor 100 of this embodiment, the temperature measuring element is arranged on the inner surface of the sealed cavity, which can monitor the current operating temperature of the MEMS sensor in real time, and can compensate for the temperature drift of the MEMS sensor according to the current operating temperature of the MEMS sensor, thereby significantly eliminating the above-mentioned temperature drift phenomenon, thereby improving the detection accuracy of the MEMS sensor of the embodiment. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0016] Figure 1 A top view of a MEMS sensor provided in some embodiments of the present application;

[0017] Figure 2 for Figure 1 Schematic diagram of the cross section along line II-II;

[0018] Figure 3 A schematic diagram of the structure of a MEMS sensor provided in some other embodiments of the present application;

[0019] Figure 4 A schematic diagram of the structure of a MEMS sensor provided in some other embodiments of the present application;

[0020] Figure 5 A schematic diagram of the structure of a MEMS sensor provided in some further embodiments of the present application;

[0021] Figure 6A schematic diagram of the structure of a MEMS sensor provided in some other embodiments of the present application;

[0022] Figure 7 Schematic diagram of the structure of the MEMS sensor provided in some embodiments of the present application

[0023] Figure 8 for Figure 7 A bottom view of the force applying element 30;

[0024] Fig. 9 A flowchart of a method for preparing a MEMS sensor provided in some embodiments of the present application;

[0025] Fig.10 for Fig. 9 Flowchart of S10;

[0026] Fig.11 for Fig. 9 Flowchart of S30;

[0027] Fig.12 A flowchart of a method for preparing a MEMS sensor provided in some other embodiments of the present application;

[0028] Fig.13 A schematic diagram of the structure of an electronic atomization device provided in some embodiments of the present application;

[0029] Fig.14 for Fig.13 Functional module diagram of the electronic atomization device;

[0030] Fig.15 Functional module diagram of the electronic atomization device provided for other embodiments of the present application.

[0031] Description of Figure Numbers:

[0032] 10-substrate, 11-first surface, 12-second surface, 13-groove, 14-Wheatstone bridge circuit, 140-varistor, 141-sub-varistor, 142-conductive area, 143-heavily doped contact area, 144-conductive lead, 15-dielectric layer, 16-passivation layer; 20-substrate, 21-first conductive hole, 22-second conductive hole, 23-third conductive hole; 30-force element, 31-temperature measuring element, 311-first lead, 312-second lead , 32-second electrode plate, 33-thermodeformable material layer; 40-conductive contact, 41-first conductive contact; 42-second conductive contact; 43-third conductive contact, 44-fourth conductive contact; 50-first sealing ring; 60-second sealing ring; 100-MEMS sensor; 200-liquid storage component; 300-atomization component; 400-control circuit; 500-power supply; 1000A-liquid storage unit, 1000B-control unit, 1000-electronic atomization device. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned figure descriptions are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not limited to the listed steps or units, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or devices.

[0035] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0036] In the description of the embodiments of the present application, the technical terms "first", "second", "third", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two (including two), such as two, three, etc., unless otherwise clearly and specifically defined, and similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0037] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0038] In the description of the embodiments of the present application, the orientation or position relationship indicated by technical terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", and "circumferential" are based on the relative orientation or position relationship between the components in a certain specific posture (as shown in the drawings) shown in the drawings. They are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the embodiments of the present application.

[0039] In the description of the embodiments of the present application, unless otherwise clearly specified and limited, technical terms such as "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0040] In recent years, with the rapid development of MEMS technology, MEMS technology has been widely used in the field of sensors. Traditional MEMS sensors are based on the single crystal silicon piezoresistive effect and usually use a Wheatstone bridge structure to convert external pressure signals into corresponding electrical signals, and measure the value of the electrical signal to obtain the size of the external pressure signal.

[0041] However, the inventors of this application also found that since the performance of MEMS sensors is greatly affected by temperature, they usually need to be temperature compensated. The traditional way is to connect a temperature signal conditioning chip to the outside of the MEMS sensor for temperature compensation to ensure measurement accuracy. However, this method cannot calibrate the actual operating temperature inside the MEMS sensor, and the obtained temperature signal is different from the actual operating temperature, which leads to the inability to effectively solve the temperature drift problem, and therefore there is a problem of inaccurate detection.

[0042] The inventor of the present application has conducted in-depth research on the structure of MEMS sensors. The MEMS sensor provided by the present application includes a substrate, a baseplate, a temperature measuring element and a conductive contact; the substrate has a first surface and a second surface relative to each other; the first surface has a groove, the second surface has a Wheatstone bridge circuit, and the bridge arm of the Wheatstone bridge circuit includes a varistor; the baseplate covers the groove to form a sealed cavity; the temperature measuring element is arranged on the inner surface of the sealed cavity; the conductive contact is arranged on the substrate and / or the baseplate, and is electrically connected to the temperature measuring element; wherein the temperature measuring element has a resistance temperature coefficient, in this way, the temperature drift of the MEMS sensor is accurately calibrated, and excellent linearity, high sensitivity, and effective suppression of temperature drift are achieved, thereby improving the detection accuracy of the MEMS sensor of the embodiment.

[0043] The present application is described in detail below with reference to the accompanying drawings and embodiments.

[0044] Please refer to Figure 1 and Figure 2 , Figure 1 A top view of a MEMS sensor provided in some embodiments of the present application; Figure 2 for Figure 1 Schematic diagram of the cross section along line II-II.

[0045] The MEMS sensor 100 provided in the embodiment of the present application includes a substrate 10 , a base plate 20 , a temperature measuring element 31 and a conductive contact 40 .

[0046] In one embodiment, the material of the substrate 10 can be a silicon-based material, such as a single crystal silicon wafer, which is a common semiconductor device substrate, on which a metal layer can be deposited and metal ions can be doped to construct a semiconductor device. In another embodiment, the MEMS sensor 100 needs to have a rollable property. In this case, practical polyacetamide (PI) can be selected as the substrate 10 substrate, and then a single crystal silicon layer is deposited thereon to prepare a rollable MEMS sensor 100. The embodiment of the present application is introduced by taking the substrate 10 as a semiconductor substrate 10 as an example.

[0047] In some embodiments, the substrate 10 has a first surface 11 and a second surface 12 opposite to each other, and the distance between the first surface 11 and the second surface 12 is the thickness of the substrate 10. The first surface 11 has a groove 13, and the cross-sectional shape of the groove 13 along the thickness direction of the substrate 10 is not limited, for example, it can be a square, a rectangle or a trapezoid, etc., and the present application does not make specific restrictions on this. The second surface 12 has a Wheatstone bridge circuit 14, and the bridge arm of the Wheatstone bridge circuit 14 includes a varistor 140.

[0048] In some embodiments, see Figure 1 The Wheatstone bridge circuit 14 includes four groups of varistors 140. The varistors 140 can generate resistance changes in response to pressure changes on the substrate 10, thereby converting pressure signals into electrical signals. Each group of varistors 140 includes two parallel and spaced sub-varistors 141. In one embodiment, the four groups of varistors 140 are arranged in the same direction, for example Figure 1 In the X direction, and distributed in Figure 1 In another embodiment, the four groups of varistors 140 are arranged in different directions. For example, two groups of varistors 140 are arranged in different directions. Figure 1 The other two groups of varistors 140 are arranged along the Y direction. Optionally, in another embodiment, the four groups of varistors 140 are arranged in a rectangular shape (not shown), and the arrangement directions of the four groups of varistors 140 are consistent.

[0049] In some embodiments, the Wheatstone bridge circuit 14 further includes four groups of conductive areas 142 for leading out electrical signals. Figure 1 As shown, four groups of varistors 140 are arranged in the middle of the substrate 10, and four conductive areas 142 are arranged around the four groups of varistors 140. In another embodiment, four groups of varistors 140 are arranged in four corners of the substrate 10 (not shown), and four conductive areas 142 are arranged in the middle of the substrate 10.

[0050] Furthermore, in some embodiments, the Wheatstone bridge circuit 14 further includes a heavily doped contact region 143 formed between the sub-varistors 141, the heavily doped contact region 143 being used to electrically connect the sub-varistors 141 in the group of varistors 140, and the heavily doped contact region 143 being a region having conductive properties after the semiconductor is doped with metal ions. Figure 2In some embodiments, the varistor 140 and the heavily doped contact region 143 are formed on the substrate 10, and the substrate 10 is also covered with a dielectric layer 15. The four groups of conductive regions 142 are formed on the dielectric layer 15. The dielectric layer 15 can be used as a protective layer and an insulating layer. The material of the dielectric layer 15 can be silicon dioxide or silicon nitride. The dielectric layer 15 can have a through hole, and the conductive region 142 and its conductive lead 144 can be electrically connected to the varistor 140 through the through hole on the dielectric layer 15. Optionally, the material of the conductive lead 144 is at least one of copper, nickel-chromium alloy, iron, or platinum. Optionally, in some embodiments, the side of the dielectric layer 15 away from the substrate 10 is also covered with a passivation layer 16, and the four groups of conductive regions 142 are at least partially exposed to the passivation layer 16. The passivation layer 16 has a dense surface and can be used to resist water vapor corrosion and device oxidation, etc., wherein the passivation layer 16 has a hollow area corresponding to the conductive area 142, so that the conductive area 142 is exposed to the external environment to facilitate the extraction of electrical signals.

[0051] In some embodiments, the substrate 20 may be a glass substrate or a ceramic substrate, etc. The substrate 20 may cover the groove 13 to form a sealed cavity. In one embodiment, the substrate 20 may be bonded to the substrate 10 to form a sealed cavity. For example, in some embodiments, the substrate 20 and the substrate 10 may be bonded to each other by metal chromium under a preset temperature and / or preset pressure. The specific preset temperature and pressure need to be determined according to the bonding material and the equipment actually used. It will not be described in detail here. Those skilled in the art can understand the concept of this embodiment based on the above description. In other embodiments, the substrate 20 may be directly bonded to the substrate 10. Further, in some embodiments, a first sealing ring 50 is provided on the first surface 11 of the substrate 10, and a second sealing ring 60 is provided on the surface of the substrate 20 close to the substrate 10. The first sealing ring 50 and the second sealing ring 60 are arranged opposite to each other, so that the substrate 10 and the substrate 20 are bonded to form a sealed cavity.

[0052] The temperature measuring element 31 is arranged on the inner surface of the sealed cavity, which may be the bottom wall of the groove 13 or the surface of the base plate 20 close to the substrate. The temperature measuring element 31 has a temperature coefficient of resistance (temperature coefficient of resistance (TCR) for short), which is used to obtain the current working temperature of the MEMS sensor in real time. The temperature measuring element 31 is electrically connected to the control circuit, so that the control circuit can compensate for the temperature drift of the MEMS sensor 100 according to the current working temperature of the MEMS sensor 100. The material of the temperature measuring element 31 may be platinum, nickel or tungsten, etc., whose resistance value changes linearly with the change of temperature. In some embodiments, the temperature measuring element 31 can be connected to an external resistance sampling circuit through the conductive contact 40 to collect the resistance value of the temperature measuring element 31 in real time, so that a resistance-temperature mapping relationship table can be established, and the current working temperature of the MEMS sensor 100 can be obtained in real time, thereby realizing accurate calibration of the temperature drift of the MEMS sensor 100.

[0053] Specifically, in one embodiment, the relationship between the compensation voltage and the operating temperature can be established in advance. For example, in some embodiments, a formula of the compensation voltage and the operating temperature can be established to correct the algorithm of the applied voltage and pressure, which will be stored in the control circuit. When the MEMS sensor 100 is used, the voltage applied to the force element 30 is controlled according to the algorithm. Alternatively, in other embodiments, a relationship table of the compensation voltage and the operating temperature can be established first and stored in the control circuit. When the MEMS sensor 100 is used, the corresponding compensation voltage is obtained according to the measured operating temperature, and then the compensation voltage is applied to the force element 30. This can greatly eliminate the temperature drift phenomenon.

[0054] It should be noted that the MEMS sensor 100 of this embodiment is not limited to deriving and calculating the pressure value through the above-mentioned preset mapping relationship table, but can also provide different correction coefficients, correction formulas, etc. according to different working temperatures. The above methods are all in line with the utility model concept of this embodiment.

[0055] The conductive contacts 40 are electrically connected to the temperature measuring element 31. The number of the conductive contacts 40 is not limited, for example, it can be 1, 2, 3 or 4, etc., and can be arranged on the substrate 10 and / or the substrate 20, that is, all of them can be arranged on the substrate 10, or all of them can be arranged on the substrate 20, or part of them can be arranged on the substrate 10, and the rest of them can be arranged on the substrate 20. Specifically, it can be designed according to needs.

[0056] In one embodiment, the conductive contact 40 includes a first conductive contact 41 and a second conductive contact 42 disposed on the substrate 20 at intervals, and the substrate 20 has a first conductive hole 21 and a second conductive hole 22, wherein the first conductive hole 21 is used to lead out the first lead 311, and the second conductive hole 22 is used to lead out the second lead 312, the first conductive contact 41 is electrically connected to one end of the temperature measuring element 31 through the first conductive hole 21 and the first lead 311, and the second conductive contact 42 is electrically connected to the other end of the temperature measuring element 31 through the second conductive hole 22 and the second lead 312, so that the first lead 311 and the second lead 312 can be connected to an external resistance sampling circuit through the first conductive contact 41 and the second conductive contact 42, thereby forming a detection circuit for detecting the resistance of the temperature measuring element 31. In some embodiments, the same material as the temperature measuring element 31 is deposited in the first conductive hole 21 and the second conductive hole 22 to form the first conductive contact 41 and the second conductive contact 42, respectively, so that the contact resistance can be reduced, the heat generation can be reduced, and the energy utilization rate can be improved.

[0057] Please continue to see Figure 2 In some embodiments, the MEMS sensor 100 further includes a force element 30, which is at least partially configured as the above-mentioned temperature measuring element 31. The force element 30 is at least partially disposed on the bottom wall of the groove 13. The force element 30 is configured to apply a force to the bottom wall of the groove 13 to move closer to or away from the substrate 20 when powered on, so as to resist the deformation (or "displacement") of the substrate 10 caused by airflow disturbance during use of the MEMS sensor 100. The force element 30 is at least partially configured as the above-mentioned temperature measuring element 31, which can be made by making a part or the whole of the force element 30 of a metal material having a temperature coefficient of resistance.

[0058] Optionally, see Figure 3-Figure 5 In some embodiments, the force-applying element 30 includes a first electrode plate and a second electrode plate 32, wherein the first electrode plate is a metal layer having a temperature coefficient of resistance and serves as a temperature measuring element 31, and the first electrode plate is disposed on the bottom wall of the groove 13; the second electrode plate 32 is disposed on the substrate 20 and is spaced apart from the first electrode plate. The conductive contact 40 is electrically connected to at least one of the first electrode plate and the second electrode plate 32, wherein the first electrode plate and the second electrode plate 32 are configured to repel or attract each other when power is supplied. The basis for the first electrode plate and the second electrode plate 32 to be configured to repel or attract each other when power is supplied may be the principle that like charges repel and opposite charges attract, such as Figure 3 As shown, or the magnetic principle that like charges repel and opposite charges attract, such as Figure 4 shown.

[0059] In some embodiments, see Figure 3, the first electrode plate and the second electrode plate 32 form a parallel electrode plate capacitor. In one embodiment, the first electrode plate is disposed on the bottom surface of the groove 13, that is, disposed on the surface of the groove 13 close to the substrate 20; the second electrode plate 32 is disposed on the surface of the substrate 20 exposed to the sealed cavity, that is, disposed on the surface of the substrate 20 close to the substrate 10. When the first electrode plate and the second electrode plate 32 are charged with opposite charges, according to the principle of opposite charges attracting, the two plates move relatively close to each other. In some embodiments of the present application, the first electrode plate moves close to the substrate 20 after being energized. Figure 3 In the embodiment, the direction close to the substrate 20 may refer to the vertically downward direction, which is defined as the first direction; when the first electrode plate and the second electrode plate 32 are charged with the same electrical property, according to the principle of like charges repelling each other, the two electrodes are relatively displaced away from each other. In some embodiments of the present application, the first electrode plate is displaced away from the substrate 20 after being energized. Figure 3 In the embodiment, the direction away from the substrate 20 may refer to a vertically upward direction, which is defined as a second direction, and will be used as an example for description in subsequent embodiments.

[0060] In some embodiments, the material of the first electrode plate can be platinum, nickel, tungsten, etc., which are suitable as thermal deformation resistors and suitable as capacitor plates. Among them, metal platinum is a good thermistor, and its resistance value changes linearly with temperature; the material of the second electrode plate 32 can also be gold, platinum, nickel, copper, tin oxide, manganese oxide, etc., which are suitable as capacitor plates.

[0061] Further, the conductive contact 40 includes a first conductive contact 41 and a second conductive contact 42 electrically connected to the first electrode plate, respectively, and a third conductive contact 43 electrically connected to the second electrode plate 32. In some embodiments, the material of the third conductive contact 43 is the same as that of the second electrode plate 32, which can reduce contact resistance, reduce heat generation, and improve energy utilization. Optionally, in other embodiments, the material of the third conductive contact 43 can also be different from that of the second electrode plate 32.

[0062] Please continue to see Figure 3, the substrate 20 has a first conductive hole 21, a second conductive hole 22 and a third conductive hole 23. In one embodiment, the first conductive contact 41 is arranged on the surface of the substrate 20 away from the substrate 10 and is electrically connected to one end of the first electrode plate through the first conductive hole 21, the second conductive contact 42 is arranged on the surface of the substrate 20 away from the substrate 10 and is electrically connected to the other end of the first electrode plate through the second conductive hole 22, and the third conductive contact 43 is arranged on the surface of the substrate 20 away from the substrate 10 and is electrically connected to the second electrode plate 32 through the third conductive hole 23. Optionally, the first conductive hole 21, the second conductive hole 22 and the third conductive hole 23 can also be arranged on the substrate 10, and can be specifically designed according to needs. In one embodiment, the first lead 311 and the second lead 312 are connected to both sides of the first electrode plate, and the same material as the first lead 311 and the second lead 312 is deposited in the first conductive hole 21 and the second conductive hole 22 to form a first conductive contact 41 and a second conductive contact 42, and the same material as the second electrode plate 32 is deposited in the third conductive hole 23 to form a third conductive contact 43.

[0063] The pressure compensation principle of the MEMS sensor 100 in the above embodiment of the present application is introduced below:

[0064] Strain film: The bottom wall of the sealed cavity is projected onto the area of ​​the substrate 10 along the second direction to form a strain film. In some embodiments, the strain film at least includes the substrate 10 and the first electrode plate.

[0065] When the strain film is subjected to pressure in the first direction, the strain film also moves in the first direction. At this time, a DC voltage can be applied to the first electrode plate and the second electrode plate 32 respectively, so that the charge on the first electrode plate and the charge on the second electrode plate 32 are the same, for example, both are positive or negative, so that the first electrode plate and the second electrode plate 32 repel each other, so that the strain film moves in the second direction, thereby compensating for the deflection of the strain film, that is, the deflection of the strain film is reduced, and the influence of the deflection of the strain film on the linearity of the test result is reduced. When it is detected that the output voltage of the Wheatstone bridge circuit 14 is the initial value, for example, zero, that is, the pressure in the first direction on the strain film is offset by the deformation force caused by the heating caused by the power on, the magnitude of the pressure applied in the first direction can be calculated according to the magnitude of the input voltage.

[0066] Optionally, when the strain film is subjected to pressure in the second direction, the strain film also moves in the second direction. At this time, a DC voltage can be applied to the first electrode plate and the second electrode plate 32 respectively, so that the charge on the first electrode plate and the charge on the second electrode plate 32 are opposite, for example, the charge on the first electrode plate is positive, and the charge on the second electrode plate 32 is negative, or the charge on the first electrode plate is negative, and the charge on the second electrode plate 32 is positive, so that the first electrode plate and the second electrode plate 32 attract each other, so that the strain film moves in the first direction, thereby compensating for the deflection of the strain film, that is, the deflection of the strain film is reduced, and the influence of the deflection of the strain film on the linearity of the test result is reduced. When it is detected that the output voltage of the Wheatstone bridge circuit 14 is the initial value, for example, zero, that is, the pressure in the first direction on the strain film is offset by the deformation force caused by the heating when the power is turned on, the magnitude of the pressure applied in the first direction can be calculated according to the magnitude of the input voltage.

[0067] Optionally, see Figure 4 and Figure 5 In other embodiments, one of the first pole plate and the second pole plate 32 includes a permanent magnetic material, and the other is an electromagnet; the conductive contact 40 is electrically connected to the electromagnet to change the polarity of the electromagnet. Specifically, the polarity of the permanent magnetic material is fixed. The embodiment of the present application is introduced with the polarity of the permanent magnetic material close to the electromagnet as the N pole. The magnetism of the electromagnet close to the permanent magnetic material can be determined by Ampere's rule. Therefore, the polarity of the electromagnet can be changed by changing the direction of the current in the electromagnet. When the magnetism of the electromagnet close to the permanent magnetic material is the N pole, the first pole plate and the second pole plate 32 repel each other. When the magnetism of the electromagnet close to the permanent magnetic material is the S pole, the first pole plate and the second pole plate 32 attract each other.

[0068] See also Figure 4 In one embodiment, the first pole plate is a permanent magnetic material, the second pole plate 32 is an electromagnet, and the conductive contact 40 includes two first conductive contacts 41 and second conductive contacts 42 disposed at intervals, and also includes two third conductive contacts 43 and fourth conductive contacts 44 disposed at intervals. The third conductive contacts 43 and fourth conductive contacts 44 are electrically connected to the second pole plate 32 and are used to pass a DC voltage to the second pole plate 32 to change its polarity. Correspondingly, the substrate 20 includes two first conductive holes 21 and second conductive holes 22 disposed at intervals, and also includes two third conductive holes 23 and fourth conductive holes 24 disposed at intervals. The same material as that of the second pole plate 32 can be deposited in the third conductive holes 23 and fourth conductive holes 24 to form the third conductive contacts 43 and fourth conductive contacts 44, respectively.

[0069] See also Figure 5In another embodiment, the first pole plate is an electromagnet, the second pole plate 32 is a permanent magnetic material, and the conductive contact 40 may only include a first conductive contact 41 and a second conductive contact 42 arranged at intervals, the first conductive contact 41 is electrically connected to the first pole plate through a first lead 311, and the second conductive contact 42 is electrically connected to the first pole plate through a second lead 312, and is used to pass a DC voltage to the first pole plate to change its polarity. Correspondingly, the substrate 20 may only have a first conductive hole 21 and a second conductive hole 22 arranged at intervals, the first conductive hole 21 is used to lead out the corresponding first lead 311, and the second conductive hole 22 is used to lead out the second lead 312. In this embodiment, the second pole plate 32 located on the substrate 20 is set as an electromagnet, and it is not necessary to arrange leads for the second pole plate 32, and the structure is simple and easy to prepare.

[0070] Optionally, in some other embodiments, the first electrode plate and the second electrode plate 32 are both electromagnets; the conductive contacts 40 are electrically connected to the first electrode plate and the second electrode plate 32, respectively, for changing the polarity of the electromagnets, and the structure thereof is as follows: Figure 4 As shown, the first conductive contact 41 and the second conductive contact 42 are electrically connected to the first plate through the first lead 311 and the second lead 312, and are used to pass a DC voltage to the first plate to change its polarity; the third conductive contact 43 and the fourth conductive contact 44 are electrically connected to the second plate 32, and are used to pass a DC voltage to the second plate 32 to change its polarity. In this embodiment, the permanent magnetic material and / or the electromagnet are cheap and easy to obtain.

[0071] Optionally, see Figure 6-Figure 8 In other embodiments, the force-applying element 30 may include a thermodeformable material layer 33 and a conductive heating layer disposed on the bottom wall of the groove 13. The thermodeformable material layer 33 is configured to be deformed when heated, thereby applying a force to the bottom wall of the groove 13 that moves closer to or away from the substrate 20. The conductive heating layer is a metal layer having a temperature coefficient of resistance and serves as a temperature measuring element 31. Its material may be metal, carbon material or polymer material, and the present application does not impose specific restrictions on this. The conductive contact 40 includes a first conductive contact 41 and a second conductive contact 42 that are electrically connected to the conductive heating layer, respectively, so that the conductive heating layer generates heat after being energized, and then transfers the heat to the thermodeformable material layer 33 to cause it to deform. The thermodeformable material layer 33 may be an insulating material or a conductive material, which has a wider range of choices. Optionally, the first conductive contact 41 is electrically connected to one end of the conductive heating layer through the first conductive hole 21 and the first lead 311 , and the second conductive contact 42 is electrically connected to the other end of the conductive heating layer through the second conductive hole 22 and the second lead 312 .

[0072] In some embodiments, see Figure 6The conductive heating layer and the thermodeformable material layer 33 are stacked. For example, the conductive heating layer is disposed between the thermodeformable material layer 33 and the bottom wall of the groove 13. The conductive heating layer can transfer heat from the contact surface to the thermodeformable material layer 33. The larger the contact surface, the faster the transfer. In other embodiments, see Figure 7 and Figure 8 The conductive heating layer surrounds the thermodeformable material layer 33 and is disposed on the bottom wall of the groove 13. The heat of the conductive heating layer can be transferred inward from the circumference of the thermodeformable material layer 33. This heat transfer method can make the heat transfer more uniform.

[0073] Optionally, in some embodiments, the thermodeformable material layer 33 and the conductive heating layer can be made of one material, such as a thermodeformable material layer, which can be deformed when powered on. In other embodiments, the thermodeformable material layer 33 and the conductive heating layer can also be replaced by an electrodeformable material layer, and a DC voltage is applied to both ends of the electrodeformable material layer, so that the electrodeformable material layer will stretch in a third direction perpendicular to the first direction due to power on, and the electrodeformable material layer is in a suspended state in the area corresponding to the sealed cavity, so when the electrodeformable material layer stretches horizontally, a force along the first direction or the second direction will be generated in the suspended area in the middle thereof.

[0074] The pressure compensation principle of the MEMS sensor 100 in the above embodiment of the present application is introduced below:

[0075] When the strain film is subjected to pressure in the first direction, the strain film also moves in the first direction. At this time, a DC voltage can be applied to both ends of the thermodeformable material layer, so that the thermodeformable material layer causes the strain film to move in the second direction due to the heating effect of power-on, thereby compensating the deflection of the strain film, that is, reducing the deflection of the strain film, and reducing the influence of the deflection of the strain film on the linearity of the test result. When it is detected that the output voltage of the Wheatstone bridge circuit 14 is an initial value, such as zero, that is, the pressure in the first direction applied to the strain film is offset by the deformation force after power-on, the magnitude of the pressure applied in the first direction can be calculated according to the magnitude of the input voltage.

[0076] Optionally, when the strain film is subjected to pressure in the second direction, the strain film also displaces in the second direction. At this time, a DC voltage can be applied to both ends of the thermodeformable material layer, so that the thermodeformable material layer causes the strain film to displace in the first direction due to the heating effect of power-on, thereby compensating for the deflection of the strain film, that is, reducing the deflection of the strain film, and reducing the influence of the deflection of the strain film on the linearity of the test result. When it is detected that the output voltage of the Wheatstone bridge circuit 14 is an initial value, such as zero, that is, the pressure in the second direction on the strain film is offset by the deformation force after power-on, the magnitude of the applied pressure in the second direction can be calculated according to the magnitude of the input voltage.

[0077] In the embodiment of the present application, a thermal deformation material layer is provided on the bottom wall of the sealed cavity (i.e., the bottom wall of the groove 13), and the pressure outside the cavity is tested by compensating the pressure inside and outside the sealed cavity. The deflection of the strain membrane is smaller and has higher linearity. By monitoring the output voltage of the Wheatstone bridge circuit 14 as an initial value, such as testing the pressure at zero, the pressure test can be visualized to the moment when the output voltage of the Wheatstone bridge circuit 14 is zero, and has higher sensitivity.

[0078] In some embodiments, the thermal deformation material layer and the conductive heating layer may also be used as the first electrode plate. In this embodiment, electrothermal deformation and electrostatic displacement may be embodied in the same MEMS sensor 100 .

[0079] Please also see Fig. 9 , Fig. 9 Flow chart of a method for preparing a MEMS sensor 100 provided in some embodiments of the present application. The method for preparing a MEMS sensor 100 provided in an embodiment of the present application includes:

[0080] S10: providing a substrate 10, wherein the substrate 10 has a first surface 11 and a second surface 12 opposite to each other, and a Wheatstone bridge circuit 14 is formed on the second surface 12;

[0081] The substrate 10 is a semiconductor substrate 10, for example, a SOI silicon wafer. Fig.10 , step S10 may include:

[0082] S11: forming four groups of varistors 140 on the second surface 12 of the substrate 10;

[0083] The varistor 140 generates a resistance change in response to the pressure change applied to the substrate 10, thereby converting the pressure signal into an electrical signal. In some embodiments, each group of varistors 140 includes two sub-varistors 141 arranged in parallel and spaced apart. Further, in one embodiment, step S11 also includes forming a heavily doped contact region 143 on the second surface 12 of the substrate 10. The heavily doped contact region 143 can be formed between the sub-varistors 141 to electrically connect the sub-varistors 141 in the group of varistors 140. The heavily doped contact region 143 is a region having conductive properties after the semiconductor is doped with metal ions.

[0084] S12: forming a dielectric layer 15 on the second surface 12 of the substrate 10 and forming a via hole in the dielectric layer 15;

[0085] The position of the via hole corresponds to the varistor 140 to expose the varistor 140 .

[0086] S13: forming a conductive lead 144 and a conductive area 142 on the dielectric layer 15;

[0087] S14: forming a passivation layer 16 on the dielectric layer 15, and patterning the passivation layer 16 to expose the conductive area 142;

[0088] S20: forming a groove 13 on the first surface 11 of the substrate 10, and disposing a temperature measuring element 31 on the bottom wall of the groove 13;

[0089] The formation method of the groove 13 is not limited, for example, the groove 13 can be formed by etching, solution corrosion or mechanical cutting. The formation method of the temperature measuring element 31 can be selected according to its material, and this application does not make specific restrictions. Step S20 can also include: forming a first lead 311 at a first end of the temperature measuring element 31, and forming a second lead 312 at a second end of the temperature measuring element 31 opposite to the first end.

[0090] S30: providing a substrate 20, and covering the groove 13 with the substrate 20 to form a sealed cavity.

[0091] See also Fig.11 , step S30 comprises:

[0092] S31: forming a first sealing ring 50 on the outer periphery of the first surface 11 of the substrate 10;

[0093] The first sealing ring may be made of chromium, aluminum, copper or gold, and may be formed by sputtering and photolithography.

[0094] S32 : forming a first conductive hole 21 and a second conductive hole 22 spaced apart on the substrate 20 , extending the first lead 311 out of the first conductive hole 21 to form a first conductive contact 41 , and extending the second lead 312 out of the second conductive hole 22 to form a second conductive contact 42 .

[0095] S33: forming a second sealing ring 60 on the outer periphery of one side of the substrate 20;

[0096] The first conductive via 21 and the second conductive via 22 may be formed by burning the substrate 20 using a TGV process.

[0097] S34: Align and bond the first sealing ring 50 and the second sealing ring 60 to electrically connect the first lead 311 and the first conductive contact 41 , the second lead 312 and the second conductive contact 42 , and form the groove 13 into a sealed cavity.

[0098] In the embodiment of setting the second electrode plate 32, step S30 also includes: forming a third conductive hole 23 on the substrate 20, forming the second electrode plate 32 at a position corresponding to the third conductive hole 23; the material of the second electrode plate 32 extends out of the third conductive hole 23 to form a third conductive contact 43.

[0099] In step S30 , the process may further include: cleaning the substrate 20 to make the substrate 20 and the substrate 10 more closely bonded.

[0100] Optionally, please also see Fig.12 , a flow chart of a method for preparing a MEMS sensor provided in some other embodiments of the present application, the method comprising:

[0101] S101: forming a second varistor 140 and a heavily doped contact region 143 on the second surface 12 of the substrate 10;

[0102] S102: forming a dielectric layer 15 on the second surface 12 of the substrate 10, forming a via hole on the dielectric layer 15, the position of the via hole corresponds to the position of the varistor 140; forming a conductive lead 144 on the dielectric layer 15, and forming a conductive area 142 at the end of the conductive lead 144;

[0103] S103: forming a passivation layer 16 on the dielectric layer 15, and forming via holes at positions of the passivation layer 16 corresponding to the conductive regions 142, so that the conductive regions 142 are exposed;

[0104] S104: forming a groove 13 on the first surface 11 of the substrate 10, and disposing a temperature measuring element 31 and a first lead 311 and a second lead 312 electrically connected to the temperature measuring element 31 on the bottom wall of the groove 13; and forming a first sealing ring 50 on the outer periphery of the first surface 11 of the substrate 10;

[0105] S105: providing a substrate 20, and forming a first conductive hole 21 and a second conductive hole 22 on the substrate 20;

[0106] S106: forming a first conductive contact 41 at the first conductive hole 21 , forming a second conductive contact 42 at the second conductive hole 22 , and forming a second sealing ring 60 on the outer periphery of the substrate 20 ;

[0107] S107 : bonding the substrate 10 and the base plate 20 together through the first sealing ring 50 and the second sealing ring 60 .

[0108] The MEMS sensor 100 provided in the above embodiment of the present application realizes the test of the pressure outside the cavity by compensating each other between the pressure inside and outside the cavity. The deflection of the strain membrane is small and has higher linearity. The pressure is tested by monitoring the moment when the output voltage of the Wheatstone bridge circuit 14 is zero. The pressure test can be concretely represented to the moment when the output voltage of the Wheatstone bridge circuit 14 is zero, and has higher sensitivity.

[0109] It should be pointed out that the position, material, size, function, etc. of each layer structure involved in the preparation method of the above-mentioned MEMS sensor 100 of the present application may correspond to the same as those in the implementation of the above-mentioned MEMS sensor 100 of the present application. For relevant details, please refer to the above-mentioned implementation, and no further details will be given here.

[0110] An exemplary embodiment of the application of the MEMS sensor 100 to an electronic atomization device is described below.

[0111] Please also see Fig.13 and Fig.14 , Fig.13 An electronic atomization device provided for some embodiments of the present application; Fig.14 for Fig.13 Functional module diagram of the electronic atomization device.

[0112] The electronic atomization device 1000 provided in the embodiment of the present application includes a liquid storage unit 1000A and a control unit 1000B; the liquid storage unit 1000A includes a liquid storage component 200 and an atomization component 300; the control unit 1000B includes a MEMS sensor 100 and a control circuit 400. In some embodiments, please refer to Fig.15 , the control unit 1000B also includes a power supply 500.

[0113] In some embodiments, the liquid storage component 200 is used to store an aerosol-generating matrix, which can be a solid matrix or liquid substance of plant leaves with a specific aroma or substance, and can generate an aerosol for users to inhale under the condition of heating without burning. The electronic atomization device 1000 of the present application can be used in different fields, such as medical treatment, beauty or leisure inhalation. The liquid storage component 200 has an aerosol inlet end and an outlet end.

[0114] The atomizing assembly 300 is disposed on the air flow path from the air inlet to the air outlet and is in fluid communication with the liquid storage assembly 200, and is used to atomize the aerosol-generating substrate from the liquid storage assembly 200. The atomizing assembly 300 may generate aerosol in any manner, such as by ultrasonic vibration or heating to atomize the aerosol-generating substrate.

[0115] The MEMS sensor 100 is a MEMS sensor 100 provided in any of the above embodiments. The MEMS sensor 100 is disposed in the air flow channel of the electronic atomization device 1000, such as upstream of the atomization assembly 300, and is used to detect changes in air pressure in the air flow channel. The MEMS sensor 100 of this embodiment can be used as an air flow start switch. When a user draws on the electronic atomization device 1000, the MEMS sensor 100 of this embodiment can be used to detect the user's puffing action and output a control signal to the control circuit 400, thereby driving the control circuit to output a voltage to the atomization assembly 300.

[0116] The power supply 500 may be electrically connected to the control circuit 400, and is used to provide voltage to the atomization assembly 300 and the MEMS sensor 100. The power supply 500 may be a rechargeable battery cell, or a replaceable disposable battery cell, etc.

[0117] The control circuit 400 is electrically connected to the atomization component 300 and the MEMS sensor 100, respectively, and is used to control the operation of the atomization component 300 according to the air pressure change in the air flow channel detected by the MEMS sensor 100. For example, an electrical signal can be applied to the force-applying element 30, thereby applying a force to the bottom wall of the groove 13 that is close to or away from the substrate 20, so that the change in the output voltage of the MEMS sensor 100 is less than or equal to a preset threshold value, thereby compensating for the drift of the relationship between the resistance value and pressure of the varistor 140 caused by the compressive deformation of the substrate 10.

[0118] It can be understood that the change in air pressure in the airflow channel will cause the change in the resistance of the piezoresistor 140, thereby causing the change in the output voltage Vout of the MEMS sensor 100, and the change in the output voltage Vout of the MEMS sensor 100 reflects the air pressure in the airflow channel, that is, the pressure on the MEMS sensor 100. When the pressure on the MEMS sensor 100 is greater than a certain value, that is, when the change in the output voltage Vout of the MEMS sensor 100 exceeds the preset threshold, the substrate 10 is compressed and deformed, causing the drift of the relationship between the resistance and pressure of the piezoresistor 140. By applying a voltage to the force element 30 (or the temperature element 31), so that the change in the output voltage Vout of the MEMS sensor 100 is less than or equal to the preset threshold, the drift of the relationship between the resistance and pressure of the piezoresistor 140 caused by the compression and deformation of the substrate 10 is compensated. The preset threshold is the change in the output voltage Vout corresponding to the drift of the relationship between the resistance and pressure of the piezoresistor 140 caused by the compression and deformation of the substrate 10, which can be obtained in advance through experiments.

[0119] The control circuit 400 may also be used to compensate for the temperature drift of the MEMS sensor 100 according to the temperature of the MEMS sensor 100 detected by the temperature measuring element 31 .

[0120] In some embodiments, the control circuit 400 is further used to detect whether the force applied by the force-applying element 30 to the bottom wall of the groove 13 offsets the deformation of the bottom wall of the groove 13 caused by the air pressure, and when it is detected that the force applied by the force-applying element 30 to the bottom wall of the groove 13 offsets the deformation of the bottom wall of the groove 13 caused by the air pressure, the magnitude of the air pressure is determined according to the electrical signal applied to the force-applying element 30. The control circuit 400 is also used to control the operation of the atomization assembly 300 according to the magnitude of the air pressure detected by the MEMS sensor 100.

[0121] Specifically, the preset threshold is set to 0, and the control circuit 400 can be used to detect whether the change in the output voltage Vout of the MEMS sensor 100 is 0, and when the change in the output voltage Vout of the MEMS sensor 100 is detected to be 0, the magnitude of the air pressure is determined according to the electrical signal applied to the force element 30 (or the temperature element 31). When the change in the output voltage Vout of the MEMS sensor 100 is detected to be 0, that is, the output voltage Vout of the MEMS sensor 100 returns to the initial value.

[0122] In some embodiments, the initial value of the output voltage Vout of the MEMS sensor 100 is 0. When the MEMS sensor 100 is deformed due to air pressure, the voltage applied to the force element 30 is Vx to compensate for the deformation, so that the output voltage Vout of the MEMS sensor 100 after compensation is restored to 0 (that is, the change in the output voltage Vout is 0). When the voltage Vx applied to the force element 30 is not 0, it is judged that the force applied by the force element 30 to the bottom wall of the groove 13 caused by the voltage Vx compensates for the deformation of the bottom wall of the groove 13 caused by the air pressure in the air flow channel, and then the air pressure can be obtained according to the value of Vx. Of course, the initial value of the output voltage Vout of the MEMS sensor 100 can also be set to other values, such as 1V, 2V, 3V or 4V, etc., and this application does not make specific restrictions. The embodiments of this application are introduced with an initial value of 0.

[0123] The working principle of the MEMS sensor 100 of this embodiment is described below in conjunction with the process of a user smoking the electronic atomization device 1000:

[0124] When the user starts to inhale, the MEMS sensor 100 is subjected to pressure in the second direction, and the substrate 10 is deformed in the second direction. Since the Wheatstone bridge circuit 14 includes a piezoresistor 140, the change in the resistance of the piezoresistor 140 causes the output voltage Vout of the Wheatstone bridge circuit 14 to change. Based on the change in the output voltage Vout, the user's inhalation action can be detected. When the substrate 10 is displaced in the second direction, a voltage is applied to the temperature measuring element 31, so that the temperature measuring element 31 is heated and displaced in the first direction, thereby offsetting the displacement in the second direction caused by the airflow fluctuation, so that the output voltage Vout of the Wheatstone bridge circuit 14 returns to an initial value, for example, an initial value of 0.

[0125] When the user performs a blowing action or an airflow fluctuation is caused by suction, a positive pressure may be generated in the electronic atomization device 1000 . Therefore, in addition to the displacement in the second direction, the substrate 10 may also be displaced along the first direction.

[0126] When the substrate 10 is subjected to pressure in the first direction (blowing or air flow fluctuation) causing displacement in the first direction, the change in the resistance value of the varistor 140 causes the output voltage Vout of the Wheatstone bridge circuit 14 to change. Based on the change in the output voltage Vout, the change in air pressure can be detected. Therefore, a voltage is applied to both ends of the temperature measuring element 31 to energize and heat the temperature measuring element 31, thereby causing the temperature measuring element 31 and the substrate 10 to displace in the second direction, thereby offsetting the displacement in the first direction caused by the pressure in the first direction. When the displacement in the first direction and the displacement in the second direction are completely offset, the output voltage Vout of the Wheatstone bridge circuit 14 returns to the initial value 0.

[0127] It can be seen that according to the different installation positions of the MEMS sensor 100 of this embodiment, it can sensitively detect the pressure in the first direction and the second direction set arbitrarily. Compared with the piezoresistive sensor in the related art, it not only has higher accuracy, but also has a wider application range.

[0128] In the electronic atomization device 1000 of the present embodiment, the temperature measuring element 31 is arranged on the inner surface of the sealed cavity, which can monitor the current working temperature of the MEMS sensor in real time, and can compensate for the temperature drift of the MEMS sensor according to the current working temperature of the MEMS sensor, thereby greatly eliminating the above-mentioned temperature drift phenomenon; in addition, since the MEMS sensor 100 is subjected to pressure along the second direction, a voltage can be applied to the force element 30 to cause the displacement of the strain film along the first direction, thereby offsetting the displacement of the strain film along the second direction caused by suction; when subjected to pressure along the first direction, a DC voltage can be applied to the force element 30 to cause the displacement of the strain film along the second direction, thereby offsetting the displacement of the strain film along the first direction caused by airflow fluctuations, so that during the entire use process, the deflection of the strain film is always small, thereby improving the problem that the deformation of the substrate 10 will not change ideally linearly with the pressure, thereby improving the detection accuracy of the MEMS sensor 100 of the embodiment of the present application; the MEMS sensor provided by the present application can be designed in a temperature-pressure integrated manner, so that it is smaller in size than devices with the same function, which is conducive to miniaturization.

[0129] Moreover, condensation is easily formed in the air flow channel of the electronic atomization device 1000; since the temperature measuring element 31 is sealed in the groove 13, the chance of the temperature measuring element 31 being corroded or contaminated by the condensation can be reduced.

[0130] In the several embodiments provided in the present application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of units is only a logical function division. There may be other division methods in actual implementation. For example, multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or units, which can be electrical, mechanical or other forms.

[0131] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit. The above-mentioned integrated unit may be implemented in the form of hardware or in the form of software functional units.

[0132] The above description is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A MEMS sensor, characterized in that: include: A substrate having a first surface and a second surface opposite to each other; the first surface having a groove, the second surface having a Wheatstone bridge circuit, and a bridge arm of the Wheatstone bridge circuit including a varistor; A substrate, covering the groove to form a sealed cavity; A temperature measuring element is arranged on the inner surface of the sealed cavity; A conductive contact, disposed on the substrate and / or the base plate and electrically connected to the temperature measuring element; Wherein, the temperature measuring element has a resistance temperature coefficient.

2. The MEMS sensor according to claim 1, characterized in that: The MEMS sensor further includes a force-applying element, which is at least partially disposed on the bottom wall of the groove; the force-applying element is configured to apply a force to the bottom wall of the groove to move closer to or away from the substrate when powered on.

3. The MEMS sensor according to claim 2, characterized in that: The force-applying element is at least partially configured as the temperature measuring element; The force-applying element comprises a first electrode plate and a second electrode plate; the first electrode plate is arranged on the bottom wall of the groove; the second electrode plate is arranged on the substrate and is spaced apart from the first electrode plate; the conductive contact is electrically connected to at least one of the first electrode plate and the second electrode plate; wherein the first electrode plate and the second electrode plate are configured to repel or attract each other when powered on; The first electrode plate is a metal layer having a temperature coefficient of resistance and serves as the temperature measuring element; the conductive contacts include a first conductive contact and a second conductive contact respectively electrically connected to the first electrode plate.

4. The MEMS sensor according to claim 3, characterized in that: The first plate and the second plate form a parallel plate capacitor, and the conductive contact further includes a third conductive contact electrically connected to the second plate.

5. The MEMS sensor according to claim 4, characterized in that: The first electrode plate is arranged on the bottom surface of the groove; the second electrode plate is arranged on the surface of the substrate exposed to the sealed cavity; the substrate has a first conductive hole, a second conductive hole and a third conductive hole; the first conductive contact is arranged on the surface of the substrate away from the substrate and is electrically connected to one end of the first electrode plate through the first conductive hole, the second conductive contact is arranged on the surface of the substrate away from the substrate and is electrically connected to the other end of the first electrode plate through the second conductive hole, and the third conductive contact is arranged on the surface of the substrate away from the substrate and is electrically connected to the second electrode plate through the third conductive hole.

6. The MEMS sensor according to claim 3, characterized in that: One of the first pole plate and the second pole plate comprises a permanent magnetic material, and the other is an electromagnet; the conductive contact is electrically connected to the electromagnet to change the polarity of the electromagnet; or The first pole plate and the second pole plate are both electromagnets; The conductive contacts are electrically connected to the first pole plate and the second pole plate respectively, and are used to change the polarity of the electromagnet.

7. The MEMS sensor according to claim 2, characterized in that: The force-applying element comprises a thermodeformable material layer and a conductive heating layer disposed on the bottom wall of the groove; the thermodeformable material layer is configured to deform under heating conditions, thereby applying a force to the bottom wall of the groove to move closer to or away from the substrate; Wherein, the conductive heating layer is a metal layer having a temperature coefficient of resistance and serves as the temperature measuring element; the conductive contacts include a first conductive contact and a second conductive contact respectively electrically connected to the conductive heating layer.

8. The MEMS sensor according to claim 7, characterized in that: The conductive heat-generating layer is disposed between the thermal deformation material layer and the bottom wall of the groove.

9. The MEMS sensor according to claim 7, characterized in that: The conductive heat-generating layer surrounds the thermal deformation material layer and is disposed on the bottom wall of the groove.

10. An electronic atomization device, characterized in that: include: A liquid storage unit, used for storing an aerosol generating matrix; an atomizing assembly, for atomizing the aerosol-generating substrate; The MEMS sensor according to any one of claims 1 to 9 is arranged on the air flow channel of the electronic atomization device and is used to detect the air pressure change in the air flow channel; A control circuit is electrically connected to the atomizing assembly and the MEMS sensor respectively; the control circuit is used to control the operation of the atomizing assembly according to the air pressure change detected by the MEMS sensor; in, The control circuit is further used to compensate for the temperature drift of the MEMS sensor according to the temperature of the MEMS sensor detected by the temperature measuring element.

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