Annealing furnace for batch processing of semiconductor wafers

Abstract

The utility model discloses an annealing furnace for batch processing of semiconductor wafers, which relates to the technical field of semiconductor wafer processing, and comprises an annealing furnace, an upper heating pipe and a lower heating pipe are respectively and fixedly connected in the annealing furnace, an opening is formed in the side wall of the bottom end of the annealing furnace, and a rotating shaft is rotatably connected to the inner wall of the bottom end of the annealing furnace. A rotating disc is fixedly connected to a shaft body of the rotating shaft, and a motor is fixedly connected to the bottom of the annealing furnace. According to the utility model, the semiconductor wafer is placed in the placing groove and is clamped in the clamping groove on the side wall of the clamping plate, the semiconductor wafer is placed and installed, the output shaft of the motor rotates to drive the rotating shaft to rotate through the bevel gear, and the rotating shaft rotates to drive the rotating disc to rotate; the placing groove, with the semiconductor wafer, of the rotary table extends into the annealing furnace, the semiconductor wafer can be annealed through the upper heating pipe and the lower heating pipe, the heat conduction effect can be improved through the heat conduction fins, and the annealing efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor wafer processing, in particular to an annealing furnace for batch processing of semiconductor wafers. Background Art

[0002] Semiconductor wafer is a basic material used to manufacture semiconductor devices. It is usually made of single crystal silicon and has a highly pure and uniform structure. During the semiconductor manufacturing process, a series of process steps are performed on the wafer to make semiconductor devices. Semiconductor wafer is one of the most critical materials in the semiconductor industry, and its quality and preparation process have an important impact on device performance.

[0003] In the prior art, during the semiconductor wafer processing process, in order to improve the stability of subsequent processing of the semiconductor wafer, the semiconductor wafer needs to be annealed. However, the space inside the annealing furnace is limited, and the annealing furnace is closed and can only anneal a portion of the semiconductor wafers within a period of time. It is difficult to continuously anneal the semiconductor wafers in batch processing. At the same time, if too many semiconductor wafers are stacked, the annealing effect will be affected. Utility Model Content

[0004] In view of the above problems existing in the existing semiconductor wafer processing, the present utility model is proposed.

[0005] Therefore, the purpose of the utility model is to provide an annealing furnace for batch processing of semiconductor wafers, which solves the problem that the space inside the annealing furnace is limited and the annealing furnace is closed and can only anneal a part of the semiconductor wafers within a period of time, making it difficult to continuously anneal the semiconductor wafers in batch processing. At the same time, if too many semiconductor wafers are stacked, the annealing effect will be affected.

[0006] In order to achieve the above purpose, the utility model provides the following technical solutions:

[0007] An annealing furnace for batch processing of semiconductor wafers comprises an annealing furnace, wherein an upper heating tube and a lower heating tube are respectively fixedly connected inside the annealing furnace, an opening is opened on the side wall of the bottom end of the annealing furnace, a rotating shaft is rotatably connected to the inner wall of the bottom end of the annealing furnace, a turntable is fixedly connected to the shaft body of the rotating shaft, a motor is fixedly connected to the bottom of the annealing furnace, bevel gears are respectively fixedly sleeved on the output shaft of the motor and the shaft body of the rotating shaft, two bevel gears are meshed with each other, a plurality of placement grooves are opened around the inner wall of the top end of the turntable, and a plurality of heat-conducting fins are respectively fixedly connected to the inner wall of the bottom end of the turntable located in the plurality of placement grooves.

[0008] Preferably, a sealing gasket is fixedly connected to the inner wall of the top end of the opening of the annealing furnace, and the upper surface of the turntable is slidably disposed on the bottom of the sealing gasket.

[0009] Preferably, a stabilizing ring is fixedly connected to the side wall of the turntable, an annular groove matching the turntable is provided on the inner wall of the annealing furnace, the stabilizing ring is slidably arranged on the inner wall of the annular groove, a sealing ring is fixedly connected to the side wall of the turntable, and the side wall of the sealing ring is pressed against the inner wall of the annealing furnace.

[0010] Preferably, a slide groove is provided on the inner wall of the placement groove where the turntable is located, a slide plate is slidably provided on the inner wall of the slide groove where the turntable is located, the side wall of the slide plate extends to the inner wall of the placement groove and is fixedly connected with a clamping plate, and a plurality of slots are provided on the side wall of the clamping plate.

[0011] Preferably, a cavity is provided on the inner wall of the top end of the turntable located in the slide slot, a spring is fixedly connected to the inner wall of the cavity, an insert block is fixedly connected to the bottom of the spring, a slot is provided on the inner wall of the top end of the slide plate, and the insert block is plugged into the inner wall of the slot.

[0012] Preferably, a pull rod is fixedly connected to the connection between the insert block and the spring, and the pull rod passes through the cavity and extends to the outside of the turntable.

[0013] In the above technical solution, the technical effects and advantages provided by the utility model are:

[0014] 1. The utility model places the semiconductor wafer inside the placement groove and clamps it in the clamping groove set on the side wall of the clamping plate to place and install the semiconductor wafer. The output shaft of the motor rotates to drive the rotating shaft to rotate through the bevel gear. The rotation of the rotating shaft drives the turntable to rotate. The turntable with the placement groove of the semiconductor wafer is extended to the inside of the annealing furnace. The upper heating tube and the lower heating tube can anneal the semiconductor wafer. The heat-conducting fins can improve the heat conduction effect and improve the annealing efficiency.

[0015] 2. In the utility model, when the placement groove of the turntable with the semiconductor wafer is extended to the inside of the annealing furnace, the semiconductor wafers that have completed annealing are moved out to the outside of the annealing furnace for unloading. While ensuring the annealing effect of the semiconductor wafer, multiple semiconductor wafers are continuously processed in batches to improve the annealing efficiency. The stabilizing ring slides along the inner wall of the annular groove to improve the stability of the turntable rotation.

[0016] 3. In the utility model, the spring can push the insert block to extend into the slot, thereby improving the stability of the slide plate in the slide groove, improving the stability of the clamping plate holding the semiconductor wafer, and ensuring the annealing efficiency of the semiconductor wafer. Pulling the pull rod can compress the spring to shrink the insert block into the cavity, the clamping plate and the slide plate can be adjusted, and the annealed semiconductor wafer can be disassembled. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in the present utility model. For ordinary technicians in this field, other drawings can also be obtained based on these drawings.

[0018] Figure 1 It is a schematic diagram of the structure of the utility model;

[0019] Figure 2 For the utility model Figure 1 A magnified schematic diagram of part A;

[0020] Figure 3 For the utility model Figure 2 A three-dimensional diagram of the structure of the middle skateboard.

[0021] Description of reference numerals:

[0022] 1. Annealing furnace; 2. Upper heating tube; 3. Lower heating tube; 4. Rotating shaft; 5. Turntable; 6. Motor; 7. Bevel gear; 8. Sealing gasket; 9. Stabilizing ring; 10. Sealing ring; 11. Heat conducting fin; 12. Slide plate; 13. Clamp; 14. Spring; 15. Insert block; 16. Pull rod. DETAILED DESCRIPTION

[0023] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0024] The utility model embodiment discloses an annealing furnace for batch processing of semiconductor wafers.

[0025] The utility model provides Figure 1-3 An annealing furnace for batch processing of semiconductor wafers shown in the figure includes an annealing furnace 1, an upper heating tube 2 and a lower heating tube 3 are fixedly connected to the interior of the annealing furnace 1, an opening is provided on the side wall of the bottom end of the annealing furnace 1, a rotating shaft 4 is rotatably connected to the inner wall of the bottom end of the annealing furnace 1, a turntable 5 is fixedly connected to the shaft body of the rotating shaft 4, a motor 6 is fixedly connected to the bottom of the annealing furnace 1, a bevel gear 7 is fixedly sleeved on the output shaft of the motor 6 and the shaft body of the rotating shaft 4, the two bevel gears 7 are meshed with each other, a plurality of placement grooves are provided around the inner wall of the top end of the turntable 5, a plurality of heat-conducting fins 11 are fixedly connected to the inner wall of the bottom end of the turntable 5 located in the plurality of placement grooves, a sealing gasket 8 is fixedly connected to the inner wall of the top end of the annealing furnace 1 located in the opening, and the upper surface of the turntable 5 is slidably arranged at the bottom of the sealing gasket 8.

[0026] A stabilizing ring 9 is fixedly connected to the side wall of the turntable 5, an annular groove matching the turntable 5 is opened on the inner wall of the annealing furnace 1, and the stabilizing ring 9 is slidably set on the inner wall of the annular groove. A sealing ring 10 is fixedly connected to the side wall of the turntable 5, and the side wall of the sealing ring 10 is pressed against the inner wall of the annealing furnace 1.

[0027] The inner wall of the turntable 5 located in the placement groove is provided with a slide groove, and the inner wall of the turntable 5 located in the slide groove is slidably provided with a slide plate 12. The side wall of the slide plate 12 extends to the inner wall of the placement groove and is fixedly connected with a clamping plate 13. The side wall of the clamping plate 13 is provided with multiple slots.

[0028] When in use, the slide plate 12 and the clamping plate 13 are pushed to extend into the placement groove, the semiconductor wafer is placed in the placement groove and clamped in the clamping groove set on the side wall of the clamping plate 13, the semiconductor wafer can be placed and installed, the output shaft of the motor 6 can drive the rotating shaft 4 to rotate through the bevel gear 7, and the rotation of the rotating shaft 4 drives the turntable 5 to rotate, the turntable with the placement groove of the semiconductor wafer can be extended to the inside of the annealing furnace 1, the upper heating tube 2 and the lower heating tube 3 can anneal the semiconductor wafer, the heat conducting fins 11 can improve the heat conduction effect, and improve the annealing Efficiency, at the same time, when the placement groove of the turntable with the semiconductor wafer is extended to the inside of the annealing furnace 1, the semiconductor wafer that has been annealed can be moved out to the outside of the annealing furnace 1 and can be unloaded. While ensuring the annealing effect of the semiconductor wafer, multiple semiconductor wafers can be processed in batches continuously to improve the annealing efficiency. The stabilizing ring 9 slides along the inner wall of the annular groove to improve the stability of the rotation of the turntable 5. The sealing ring 10 and the sealing gasket 8 can improve the sealing between the top of the turntable 5 and the annealing furnace 1, reducing the external influence on the semiconductor wafer during annealing.

[0029] In order to improve the stability of the clamping plate 13 in clamping the semiconductor wafer, Figure 1-3 As shown, a cavity is provided on the inner wall of the top end of the turntable 5 located in the slide slot, a spring 14 is fixedly connected to the inner wall of the cavity, an insert block 15 is fixedly connected to the bottom of the spring 14, a slot is provided on the inner wall of the top end of the slide plate 12, the insert block 15 is plugged into the inner wall of the slot, a pull rod 16 is fixedly connected at the connection between the insert block 15 and the spring 14, and the pull rod 16 passes through the cavity and extends to the outside of the turntable 5.

[0030] The spring 14 can push the insert block 15 to extend into the interior of the slot, thereby improving the stability of the slide plate 12 inside the slide groove, improving the stability of the clamping plate 13 in clamping the semiconductor wafer, and ensuring the annealing efficiency of the semiconductor wafer. Pulling the pull rod 16 can compress the spring 14 to shrink the insert block 15 into the cavity, the clamping plate 13 and the slide plate 12 can be adjusted, and the annealed semiconductor wafer can be disassembled.

[0031] The above only describes some exemplary embodiments of the present invention by way of illustration. It is undoubted that those skilled in the art can modify the described embodiments in various ways without departing from the spirit and scope of the present invention. Therefore, the above drawings and descriptions are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.

Claims

1. An annealing furnace for batch processing of semiconductor wafers, comprising an annealing furnace (1), characterized in that: The interior of the annealing furnace (1) is fixedly connected with an upper heating tube (2) and a lower heating tube (3), respectively; an opening is provided on the side wall at the bottom end of the annealing furnace (1); a rotating shaft (4) is rotatably connected to the inner wall at the bottom end of the annealing furnace (1); a rotating disk (5) is fixedly connected to the shaft body of the rotating shaft (4); a motor (6) is fixedly connected to the bottom of the annealing furnace (1); a bevel gear (7) is fixedly sleeved on the output shaft of the motor (6) and the shaft body of the rotating shaft (4); the two bevel gears (7) are meshed with each other; a plurality of placement grooves are provided around the inner wall at the top end of the rotating disk (5); and a plurality of heat-conducting fins (11) are fixedly connected to the inner wall at the bottom end of the rotating disk (5) located in the plurality of placement grooves.

2. The annealing furnace for semiconductor wafer batch processing according to claim 1, characterized in that: A sealing gasket (8) is fixedly connected to the inner wall of the top end of the opening of the annealing furnace (1), and the upper surface of the turntable (5) is slidably arranged on the bottom of the sealing gasket (8).

3. The annealing furnace for semiconductor wafer batch processing according to claim 1, characterized in that: A stabilizing ring (9) is fixedly connected to the side wall of the turntable (5), an annular groove matching the turntable (5) is provided on the inner wall of the annealing furnace (1), the stabilizing ring (9) is slidably arranged on the inner wall of the annular groove, a sealing ring (10) is fixedly connected to the side wall of the turntable (5), and the side wall of the sealing ring (10) is pressed against the inner wall of the annealing furnace (1).

4. The annealing furnace for semiconductor wafer batch processing according to claim 1, characterized in that: The inner wall of the placement groove of the rotating disk (5) is provided with a slide groove, and the inner wall of the slide groove of the rotating disk (5) is provided with a slide plate (12) for sliding. The side wall of the slide plate (12) extends to the inner wall of the placement groove and is fixedly connected with a clamping plate (13). The side wall of the clamping plate (13) is provided with a plurality of slots.

5. The annealing furnace for semiconductor wafer batch processing according to claim 4, characterized in that: The rotating disk (5) is provided with a cavity on the inner wall at the top end of the slide slot, a spring (14) is fixedly connected to the inner wall of the cavity, an insert block (15) is fixedly connected to the bottom of the spring (14), a slot is provided on the inner wall at the top end of the slide plate (12), and the insert block (15) is inserted into the inner wall of the slot.

6. The annealing furnace for semiconductor wafer batch processing according to claim 5, characterized in that: A pull rod (16) is fixedly connected to the connection point between the insert block (15) and the spring (14), and the pull rod (16) passes through the cavity and extends to the outside of the rotating disk (5).

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