Short-circuit and over-current protection circuit for output end of MOS (Metal Oxide Semiconductor) tube

Abstract

The utility model discloses an MOS tube output end short circuit and overcurrent protection circuit, which realizes short circuit self-locking of a load output end by arranging a short circuit self-locking sub-circuit among a negative electrode of a first semiconductor switch, a ground end and a load output end, prevents heating and even burnout of an MOS tube even if the load output end is short-circuited all the time, protects the MOS tube to the greatest extent, and improves the service life of the MOS tube. The MOS tube is protected for a long time, and the stability of the whole electronic product using the circuit is greatly improved.

Description

Technical Field

[0001] The utility model relates to the technical field of circuit protection, in particular to a MOS tube output terminal short circuit and overcurrent protection circuit. Background Art

[0002] It is common to use low power signal input to control a metal-oxide-semiconductor field effect transistor MOSFET, or MOS for short, to control a high power load output.

[0003] like Figure 2 The circuit diagram of the commonly used control circuit is shown in the figure, and its technical solution is: the positive electrode T11 of the first DC power supply is connected to the collector of the first NPN transistor VT11 through the first resistor 11. The signal input terminal T12 is connected to the first NPN transistor VT11 through the second resistor 12, the control electrode of the first NPN transistor VT11 is connected to the third resistor 13, and then connected to the ground GND, and the emitter of the first NPN transistor VT11 is also grounded. The collector of the first NPN transistor VT11 is connected to the gate of the MOS transistor Q11 through the fourth resistor 14. The source of the MOS transistor Q11 is connected to the positive electrode T11 of the first DC power supply, and the drain is connected to the positive electrode of the first diode 15 for preventing reverse current, and the cathode of the first diode 15 is connected to the load output terminal T13. In summary, the control circuit forms a control signal transmission chain as follows: the signal input terminal T12 is responsible for receiving the high-level output signal or low-level output signal of the chip connected to the signal. If it is a high-level output signal, after being transmitted to the control electrode of the first NPN transistor VT11, a current is formed between the collector and the emitter. The collector voltage of the first NPN transistor VT11 drops to a very low level and is transmitted to the gate of the MOS transistor Q11, so that the MOS transistor Q11 is turned on, and a conduction path is formed between its drain and source. In this way, the signal of the signal input terminal T12 controls the signal output of the load output terminal T13 by controlling the MOS transistor Q11. However, a large current output main path is formed from the positive electrode T11 of the first DC power supply to the load output terminal T13, which easily causes the MOS transistor Q11 to heat up and burn out.

[0004] like Figure 3 The following is a common MOS tube protection circuit to prevent instantaneous high current: Figure 2On the basis of the first PNP transistor VT21, a first PNP transistor VT21 and a fifth resistor 16 are additionally provided; the collector of the first PNP transistor VT21 is connected to the gate of the MOS transistor Q11, the control electrode is connected to the source of the MOS transistor Q11, and the emitter is connected to the positive electrode T11 of the first DC power supply. The two ends of the fifth resistor 16 are respectively connected to the emitter and the control electrode of the first PNP transistor VT21. When the load output terminal T13 is loaded normally and the current from the source to the drain of the MOS transistor Q11 is normal, the voltage of the fifth resistor 16 is relatively small, and the voltage difference between the emitter and the control electrode of the first PNP transistor VT21 is relatively small and is in a non-conducting state. When the load output terminal T13 is too low and a large instantaneous current flows from the source to the drain of the MOS tube Q11, the first PNP transistor VT21 is in the on state, and the current flows from the first DC power supply positive electrode T11 to the gate of the MOS tube Q11, raising the voltage of the gate of the MOS tube Q11, thereby causing the MOS tube Q11 to be in a semi-on state, and the current from the source to the drain of the MOS tube Q11 is controlled to a stable value, thereby protecting the MOS tube Q11 to a certain extent, thereby playing a role in preventing large instantaneous currents. However Figure 2 The protection circuit also has the following disadvantages:

[0005] 1. It only provides instantaneous high current protection, but not long-term protection. When the MOS tube Q11 is in a semi-conducting state, the heat generated is much more serious than in a normal conducting state. After a long time, the MOS tube Q11 will still burn out.

[0006] 2. When the current of the fifth resistor 16 is large, the power consumption will be very high, which is not in line with the national policy of energy conservation and emission reduction and the company's own strict requirements on product power consumption.

[0007] 3. For example, if the load output terminal T13 is short-circuited, the external LED lamp will be short-circuited to ground and there will be no protection effect at all, and the MOS tube Q11 will burn out quickly.

[0008] Therefore, how to better protect the MOS tube based on the existing MOS tube protection circuit or output circuit to improve the stability of the entire electronic product is a technical problem that needs to be solved urgently in this technical field. Utility Model Content

[0009] The utility model overcomes the deficiencies of the above-mentioned technologies and provides an offline voice central control system.

[0010] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0011] A MOS tube output terminal short circuit and overcurrent protection circuit, comprising: a DC power supply positive electrode T101, a signal input terminal T102, a load output terminal T103, a first step-down or current limiting element 101, a second step-down or current limiting element 102, a third step-down or current limiting element 103, a fourth step-down or current limiting element 104, a first semiconductor switch VT101, a MOS tube Q101, and a first diode D1;

[0012] The gate of the MOS transistor Q101 is connected to the positive electrode T101 of the DC power supply through the fourth step-down or current-limiting element 104 and the first step-down or current-limiting element 101, the source is connected to the positive electrode T101 of the DC power supply, and the drain is connected to the positive electrode of the first diode D1; the cathode of the first diode D1 is connected to the load output terminal T103;

[0013] The positive electrode of the first semiconductor switch VT101 is connected to the positive electrode T101 of the DC power supply through the first voltage-reducing or current-limiting element 101, and the control electrode is connected to the signal input terminal T102 through the second voltage-reducing or current-limiting element 102;

[0014] A short-circuit self-locking subcircuit 3 is provided between the negative electrode of the first semiconductor switch VT101, the ground terminal, and the load output terminal T103. The short-circuit self-locking subcircuit 3 is provided with a reference voltage terminal T104. The short-circuit self-locking subcircuit 3 is used to realize self-locking when the voltage of the reference voltage terminal T104 is greater than the voltage of the load output terminal T103, so that the MOS tube is in a non-conducting state;

[0015] The short-circuit self-locking subcircuit 3 is configured to automatically enter a self-locking state when the voltage of the reference voltage terminal T104 is greater than the voltage of the load output terminal T103, so that the first semiconductor switch VT101 is disconnected to ensure that the MOS tube Q101 is in a non-conducting state.

[0016] Preferably, the short-circuit self-locking sub-circuit 3 includes: a third semiconductor switch VT103, a fourth semiconductor switch VT104, a sixth step-down or current-limiting element 106, and an eighth step-down or current-limiting element 108; the positive electrode of the third semiconductor switch VT103 is connected to the negative electrode of the first semiconductor switch VT101, the negative electrode is grounded, and the control electrode is connected to the negative electrode of the fourth semiconductor switch VT104 through the sixth step-down or current-limiting element 106; the positive electrode of the fourth semiconductor switch VT104 is connected to the load output terminal T103 through the forward-connected second diode D2, and the control electrode serves as the reference voltage terminal T104, and the eighth step-down or current-limiting element 108 is connected between the positive electrode of the fourth semiconductor switch VT104 and the positive electrode T101 of the DC power supply.

[0017] Preferably, the short-circuit self-locking sub-circuit 3 also includes: a second semiconductor switch VT102, a fifth step-down or current-limiting element 105, and a capacitor C1; the positive electrode of the second semiconductor switch VT102 is connected to the positive electrode of the DC power supply positive electrode T101, and the negative electrode is connected to the negative electrode of the four semiconductor switches VT104, one end of the fifth step-down or current-limiting element 105 is connected to the signal input terminal T102, and the other end is connected to the control electrode of the second semiconductor switch VT102, one end of the capacitor C1 is connected to the negative electrode of the second semiconductor switch VT102, and the other end is grounded.

[0018] Preferably, the short-circuit self-locking sub-circuit 3 further includes: a seventh voltage-reducing or current-limiting element 107 , one end of which is connected to the control electrode of the third semiconductor switch VT103 , and the other end of which is grounded.

[0019] Preferably, a voltage stabilizing component 110 is connected between the reference voltage terminal T104 and the DC power positive electrode T101.

[0020] Preferably, the voltage stabilizing component 110 is a voltage stabilizing diode.

[0021] Preferably, the short-circuit self-locking sub-circuit 3 further includes: a ninth voltage-reducing or current-limiting element 109 , one end of which is connected to the positive electrode of the voltage-stabilizing component 110 , and the other end of which is grounded.

[0022] Compared with the prior art, the beneficial effects of the utility model are:

[0023] 1. In this case, a short-circuit self-locking subcircuit is set in a MOS tube output short-circuit and overcurrent protection circuit to achieve short-circuit self-locking of the load output terminal. Even if the load output terminal is short-circuited all the time, the MOS tube will not be heated or even burned out, which protects the MOS tube to the greatest extent and plays a long-term protective role on the MOS tube, greatly improving the stability of the entire electronic product using this circuit.

[0024] 2. This case has dual restart functions: hard restart and soft restart. Hard restart greatly facilitates user use. Soft restart can be judged and controlled at the algorithm level, which is convenient for R&D personnel. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a circuit diagram of an embodiment of this case.

[0026] Figure 2 It is a circuit diagram of a common control circuit in the background technology.

[0027] Figure 3 This is the circuit diagram of a common MOS tube protection circuit to prevent instantaneous high current. DETAILED DESCRIPTION

[0028] The following examples further illustrate the features of the present invention and other related features to facilitate understanding by those skilled in the art:

[0029] like Figure 1 As shown, a MOS tube output terminal short circuit and overcurrent protection circuit includes: a DC power supply positive electrode T101, a signal input terminal T102, a load output terminal T103, a first step-down or current limiting element 101, a second step-down or current limiting element 102, a third step-down or current limiting element 103, a fourth step-down or current limiting element 104, a first semiconductor switch VT101, a MOS tube Q101, and a first diode D1;

[0030] The gate of the MOS transistor Q101 is connected to the positive electrode T101 of the DC power supply through the fourth step-down or current-limiting element 104 and the first step-down or current-limiting element 101, the source is connected to the positive electrode T101 of the DC power supply, and the drain is connected to the positive electrode of the first diode D1; the cathode of the first diode D1 is connected to the load output terminal T103;

[0031] The positive electrode of the first semiconductor switch VT101 is connected to the positive electrode T101 of the DC power supply through the first voltage-reducing or current-limiting element 101, and the control electrode is connected to the signal input terminal T102 through the second voltage-reducing or current-limiting element 102;

[0032] A short-circuit self-locking subcircuit 3 is provided between the negative electrode of the first semiconductor switch VT101, the ground terminal, and the load output terminal T103. The short-circuit self-locking subcircuit 3 is provided with a reference voltage terminal T104. The short-circuit self-locking subcircuit 3 is used to achieve self-locking when the voltage of the reference voltage terminal T104 is greater than the voltage of the load output terminal T103, so that the MOS tube is in a non-conducting state.

[0033] The short-circuit self-locking subcircuit 3 is configured to automatically enter a self-locking state when the voltage of the reference voltage terminal T104 is greater than the voltage of the load output terminal T103, so that the first semiconductor switch VT101 is disconnected to ensure that the MOS tube Q101 is in a non-conducting state.

[0034] As described above, in this case, a short-circuit self-locking subcircuit 3 is provided in a MOS tube output short-circuit and overcurrent protection circuit to achieve short-circuit self-locking of the load output terminal T103. Even if the load output terminal T103 is always short-circuited, the MOS tube Q101 will not be heated or even burned out, thereby protecting the MOS tube Q101 to the greatest extent and greatly improving the stability of the entire electronic product using this circuit.

[0035] like Figure 1 As shown, the short-circuit self-locking sub-circuit 3 includes: a third semiconductor switch VT

[0036] 103, a fourth semiconductor switch VT104, a sixth voltage-reducing or current-limiting element 106, an eighth voltage-reducing or current-limiting element 108;

[0037] The positive electrode of the third semiconductor switch VT103 is connected to the negative electrode of the first semiconductor switch VT101, the negative electrode is grounded, and the control electrode is connected to the negative electrode of the fourth semiconductor switch VT104 through the sixth step-down or current-limiting element 106;

[0038] The anode of the fourth semiconductor switch VT104 is connected to the load output terminal T103 through the second diode D2 connected in the forward direction, and the control electrode is used as the reference voltage terminal T104. The eighth voltage reduction or current limiting element 108 is connected between the anode of the fourth semiconductor switch VT104 and the DC power supply positive electrode T101. The short-circuit self-locking subcircuit 3 is provided with a reference voltage terminal T104;

[0039] In a specific implementation, all semiconductor switches are triodes, wherein the first semiconductor switch VT101 and the third semiconductor switch VT103 are NPN triodes, and the second semiconductor switch VT102 and the fourth semiconductor switch VT104 are PNP triodes.

[0040] As described above, by setting the third semiconductor switch VT103, the fourth semiconductor switch VT104 and a plurality of voltage reducing or current limiting elements in the short circuit self-locking sub-circuit 3,

[0041] In order to automatically lock the circuit when the load is short-circuited, ensure that the MOS tube remains in a non-conducting state, and further enhance the reliability and stability of the protection circuit. Specifically, since the control electrode of the fourth semiconductor switch VT104 directly serves as the reference voltage terminal T104, when the reference voltage is higher than the voltage of the load output terminal, the fourth semiconductor switch will quickly become a non-conducting state, thereby causing the third semiconductor switch VT103 and the first semiconductor switch VT101 to also become a non-conducting state through a chain reaction, and finally achieving a non-conducting state of the MOS tube Q101, quickly cutting off the circuit and avoiding damage caused by a short circuit. The setting of the multiple voltage-reducing or current-limiting elements can ensure that the semiconductor switch works stably under an appropriate operating voltage and avoid damage caused by overvoltage or overcurrent. The voltage-reducing or current-limiting elements can be resistors.

[0042] like Figure 1As shown, the short-circuit self-locking subcircuit 3 also includes: a second semiconductor switch VT102, a fifth step-down or current-limiting element 105, and a capacitor C1; the positive electrode of the second semiconductor switch VT102 is connected to the positive electrode of the DC power supply positive electrode T101, and the negative electrode is connected to the negative electrode of the four semiconductor switches VT104, one end of the fifth step-down or current-limiting element 105 is connected to the signal input terminal T102, and the other end is connected to the control electrode of the second semiconductor switch VT102, one end of the capacitor C1 is connected to the negative electrode of the second semiconductor switch VT102, and the other end is grounded. In specific implementation, after self-locking, the MOS tube Q101 is in a non-conducting state. The circuit requires a restart mechanism to resume normal operation. The circuit in this case also has a double restart function, and the working process of the double restart is as follows:

[0043] Hard restart, the bad load is removed from the load output terminal T103, and a normal load is reconnected. The current and voltage of the eighth step-down or current-limiting element 108 are reduced, the positive electrode voltage of the fourth semiconductor switch VT104 increases, and the fourth semiconductor switch VT104 becomes conductive. The current from the positive electrode to the negative electrode of the fourth semiconductor switch VT104 is conducted, and the positive electrode voltage of the fourth semiconductor switch VT104 increases, which causes the control electrode voltage of the third semiconductor switch VT103 to increase and restore to the conductive state. The negative electrode voltage of the first semiconductor switch VT101 decreases and becomes conductive, and the gate voltage of the MOS tube Q101 decreases and becomes conductive.

[0044] During soft restart, the external chip provides a low-level signal to the signal input terminal T102, the control electrode voltage of the second semiconductor switch VT102 decreases and becomes conductive, and the voltage of the third semiconductor switch VT103 increases and restores the conductive state. Within a certain period of time, the signal provided by the chip to the signal input terminal T102 becomes high level, the control electrode voltage of the second semiconductor switch VT102 increases and becomes non-conductive, but because of the presence of capacitor C1, the control electrode voltage of the third semiconductor switch VT103 will not change in a short time and thus remain conductive. The control electrode of the first semiconductor switch VT101 has a voltage difference with the negative electrode and becomes conductive, and the gate voltage of the MOS tube Q101 decreases and becomes conductive. The positive electrode voltage of the fourth semiconductor switch VT104 increases, the fourth semiconductor switch VT104 becomes turned on, the current from the positive electrode to the negative electrode of the fourth semiconductor switch VT104 is turned on, and the negative electrode voltage of the fourth semiconductor switch VT104 increases. At this time, the control electrode voltage of the third semiconductor switch VT103 does not need to rely on the capacitor C1 or the negative electrode of the second semiconductor switch VT102. The third semiconductor switch VT103 can be continuously in the on state, and the entire circuit returns to normal.

[0045] As described above, by adding a second semiconductor switch, a fifth step-down or current-limiting element and a capacitor to the short-circuit self-locking subcircuit, a portion of the electrical energy is stored by the capacitor so that the circuit can be restarted by soft start after self-locking; thus, after the circuit of this case enters the self-locking state, double restart hard restart and soft restart can be achieved. Hard restart greatly facilitates the use of users. Soft restart facilitates the control of R&D personnel. Moreover, by appropriately adjusting the voltage of the control electrode of the second semiconductor switch VT102 through the fifth step-down or current-limiting element 105, it can be ensured that when a short circuit occurs, the second semiconductor switch VT102 can be timely and reliably changed to a non-conducting state, thereby further ensuring that the MOS tube Q101 completely enters a non-conducting state and the circuit is completely disconnected.

[0046] like Figure 1 As shown, in a specific implementation, the short-circuit self-locking sub-circuit 3 further includes: 4. A seventh voltage-reducing or current-limiting element 107, one end of which is connected to the control electrode of the third semiconductor switch VT103 and the other end is grounded. In this way, the seventh voltage-reducing or current-limiting element 107 can accurately adjust the voltage of the control electrode of the third semiconductor switch VT103 so as to respond more quickly and cut off the current.

[0047] like Figure 1 As shown, in a specific implementation, a voltage stabilizing component 110 is connected between the reference voltage terminal T104 and the positive electrode T101 of the DC power supply. The voltage stabilizing component 110 is a voltage stabilizing diode. In a specific implementation, a voltage stabilizing diode is a special diode that can increase the reverse current sharply while the reverse voltage remains almost unchanged when the reverse voltage reaches a certain value. This characteristic enables the voltage stabilizing diode to be used as a stable voltage reference source. In this way, the voltage stabilizing component is conducive to ensuring the stability of the reference voltage. The voltage stabilizing component adopts a voltage stabilizing diode, which has good stability, low cost and is applicable to a wider range of scenarios.

[0048] like Figure 1 As shown, in a specific implementation, the short-circuit self-locking subcircuit 3 further includes: a ninth voltage-reducing or current-limiting element 109, one end of which is connected to the positive electrode of the voltage-stabilizing component 110, and the other end is grounded. In this way, the ninth voltage-reducing or current-limiting element 109 can effectively limit or reduce the current flowing to the voltage-stabilizing component 110, thereby ensuring that the voltage-stabilizing component 110 is supplied with a stable voltage within a normal working range.

[0049] Specifically, in abnormal conditions such as short circuit or overload, the ninth voltage reducing or current limiting element 109 can quickly limit the current, thereby preventing other components in the circuit from being damaged due to overcurrent, thereby protecting the voltage stabilizing component 110 itself and other circuit components connected thereto, thereby improving the reliability and safety of the entire circuit system.

[0050] In summary, the working process of short-circuit self-locking in this case is as follows:

[0051] When the load output terminal T103 is short-circuited to the ground, the voltage of the load output terminal T103 drops rapidly, while the voltage of the reference voltage terminal T104 remains stable due to the action of the voltage stabilizing element 110. At this time, the voltage of the reference voltage terminal T104 is greater than the voltage of the load output terminal T103. Due to the voltage drop of the load output terminal T103, the current of the eighth step-down or current-limiting element 108 increases, and the positive electrode voltage of the fourth semiconductor switch VT104 drops, causing the fourth semiconductor switch VT104 to become non-conductive, and the current from the positive electrode to the negative electrode of the fourth semiconductor switch VT104 is disconnected, and the negative electrode voltage of the fourth semiconductor switch VT104 drops, which in turn causes the control electrode voltage of the third semiconductor switch VT103 to be insufficient and become non-conductive, and the first semiconductor switch VT101 also becomes non-conductive, and the gate voltage of the MOS tube Q101 rises and becomes non-conductive, so that the MOS tube is in a completely non-conductive state, thereby realizing the short-circuit self-locking function of the entire circuit.

[0052] As described above, this case protects a MOS tube output short-circuit and overcurrent protection circuit, and all technical solutions that are the same or similar to this case should be shown to fall within the protection scope of this case.

Claims

1. A MOS tube output short circuit and overcurrent protection circuit, characterized in that: include: A DC power supply positive electrode (T101), a signal input terminal (T102), a load output terminal (T103), a first voltage-reducing or current-limiting element (101), a second voltage-reducing or current-limiting element (102), a third voltage-reducing or current-limiting element (103), a fourth voltage-reducing or current-limiting element (104), a first semiconductor switch (VT101), a MOS tube (Q101), and a first diode (D1); The gate of the MOS tube (Q101) is connected to the positive electrode of the DC power supply (T101) through the fourth step-down or current-limiting element (104) and the first step-down or current-limiting element (101) in sequence, the source is connected to the positive electrode of the DC power supply (T101), and the drain is connected to the positive electrode of the first diode (D1); the cathode of the first diode (D1) is connected to the load output end (T103); The positive electrode of the first semiconductor switch (VT101) is connected to the positive electrode (T101) of the DC power supply through a first voltage-reducing or current-limiting element (101), and the control electrode is connected to the signal input terminal (T102) through a second voltage-reducing or current-limiting element (102); A short-circuit self-locking subcircuit (3) is provided between the negative electrode of the first semiconductor switch (VT101), the ground terminal and the load output terminal (T103); the short-circuit self-locking subcircuit (3) is provided with a reference voltage terminal (T104); the short-circuit self-locking subcircuit (3) is used to realize self-locking when the voltage of the reference voltage terminal (T104) is greater than the voltage of the load output terminal (T103), so that the MOS tube is in a non-conducting state.

2. A MOS tube output short circuit and overcurrent protection circuit according to claim 1, characterized in that: The short-circuit self-locking subcircuit (3) comprises: a third semiconductor switch (VT103), a fourth semiconductor switch (VT104), a sixth voltage-reducing or current-limiting element (106), and an eighth voltage-reducing or current-limiting element (108); The positive electrode of the third semiconductor switch (VT103) is connected to the negative electrode of the first semiconductor switch (VT101), the negative electrode is grounded, and the control electrode is connected to the negative electrode of the fourth semiconductor switch (VT104) via a sixth voltage-reducing or current-limiting element (106); The anode of the fourth semiconductor switch (VT104) is connected to the load output terminal (T103) through a forward-connected second diode (D2), and the control electrode serves as the reference voltage terminal (T104). The eighth voltage-reducing or current-limiting element (108) is connected between the anode of the fourth semiconductor switch (VT104) and the anode of the DC power supply (T101).

3. A MOS tube output short circuit and overcurrent protection circuit according to claim 2, characterized in that: The short-circuit self-locking subcircuit (3) further comprises: a second semiconductor switch (VT102), a fifth voltage-reducing or current-limiting element (105), and a capacitor (C1); the positive electrode of the second semiconductor switch (VT102) is connected to the positive electrode of the DC power supply (T101), and the negative electrode is connected to the negative electrode of the four semiconductor switches (VT104); one end of the fifth voltage-reducing or current-limiting element (105) is connected to the signal input end (T102), and the other end is connected to the control electrode of the second semiconductor switch (VT102); one end of the capacitor (C1) is connected to the negative electrode of the second semiconductor switch (VT102), and the other end is grounded.

4. A MOS tube output short circuit and overcurrent protection circuit according to claim 2, characterized in that: The short-circuit self-locking subcircuit (3) further comprises: a seventh voltage-reducing or current-limiting element (107), one end of which is connected to the control electrode of the third semiconductor switch (VT103) and the other end of which is grounded.

5. A MOS tube output short circuit and overcurrent protection circuit according to claim 1, characterized in that: A voltage stabilizing component (110) is connected between the reference voltage terminal (T104) and the positive electrode (T101) of the DC power supply.

6. A MOS tube output short circuit and overcurrent protection circuit according to claim 5, characterized in that: The voltage stabilizing component (110) is a voltage stabilizing diode.

7. A MOS tube output short circuit and overcurrent protection circuit according to claim 5 or 6, characterized in that: The short-circuit self-locking subcircuit (3) further comprises: a ninth voltage-reducing or current-limiting element (109), one end of the ninth voltage-reducing or current-limiting element (109) being connected to the positive electrode of the voltage-stabilizing component (110) and the other end being grounded.

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