Power semiconductor module and power converter
By setting electrode terminals on the surface of the package structure of the power semiconductor module, the capacitor device is closer to the input terminal of the power semiconductor circuit inside the module, and the capacitor device is set outside the package structure, which facilitates replacement and heat dissipation, solving the problem of poor peak voltage absorption effect when the power semiconductor module is turned off, achieving higher stability and flexibility.
Patent Information
- Application Number
- CN202421529862.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-28
- Publication Date
- 2025-05-09
- Estimated Expiration
- 2034-06-28
AI Technical Summary
In the prior art, the peak voltage absorption effect of the power semiconductor module when it is turned off is poor, resulting in the module stability being affected.
By setting electrode terminals on the surface of the package structure of the power semiconductor module, the capacitor device is closer to the input terminal of the power semiconductor circuit inside the module, and the capacitor device is placed outside the package structure, so that replacement and heat dissipation are facilitated.
It improves the effect of capacitance devices to absorb spike voltage, enhances the stability of power semiconductor modules, and improves the flexibility and heat dissipation performance of capacitor devices.
Smart Images
Figure CN222851442U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor modules, in particular to a power semiconductor module and a power converter. Background Art
[0002] Power semiconductor devices such as insulated gate bipolar transistors IGBT, silicon carbide metal oxide semiconductor field effect tubes SIC MOSFET, etc. are packaged into semiconductor modules and applied in circuits. In order to reduce the peak voltage that occurs when the power semiconductor module is turned off, in the related art, the power semiconductor module and the capacitor device are usually arranged together on the PCB (Printed Circuit Board) board of the circuit, and the capacitor device and the power semiconductor module are connected by a wire. Capacitor devices such as film capacitors or chip capacitors are used to absorb the peak voltage that occurs when the power semiconductor module is turned off. In this way, there is still some parasitic inductance between the terminal of the capacitor device and the terminal inside the module, and the peak voltage absorption effect is poor, which is not conducive to the stable operation of the power semiconductor module. Utility Model Content
[0003] In view of this, an object of the present invention is to provide a power semiconductor module and a power converter to improve the effect of capacitor components in absorbing peak voltage.
[0004] In the first aspect, an embodiment of the utility model provides a power semiconductor module, which includes a power semiconductor circuit and a packaging structure; the power semiconductor circuit is packaged inside the packaging structure; the surface of the packaging structure is provided with an input terminal of the power semiconductor circuit; the surface of the packaging structure is also provided with an electrode terminal, which is connected to the input terminal of the power semiconductor circuit; the electrode terminal is used to connect a capacitor device.
[0005] The input terminal is arranged on a first plane on the surface of the packaging structure; the electrode terminal is arranged on a second plane on the surface of the packaging structure; and the first plane and the second plane are connected.
[0006] The input terminal is arranged on a first plane on the surface of the packaging structure; the electrode terminal is arranged on a second plane on the surface of the packaging structure; and the first plane and the second plane are arranged opposite to each other.
[0007] The input terminal and the electrode terminal are arranged on the same plane of the surface of the packaging structure.
[0008] The input terminals include a plurality of terminals, which are arranged in sequence; the electrode terminals include one or more terminals, which are arranged between the plurality of input terminals.
[0009] The above-mentioned input terminals include a positive level input terminal, an intermediate level input terminal and a negative level input terminal; the electrode terminals include a first electrode terminal and a second electrode terminal; the first electrode terminal is arranged between the positive level input terminal and the intermediate level input terminal, and the second electrode terminal is arranged between the intermediate level input terminal and the negative level input terminal.
[0010] The first electrode terminals are respectively connected to the positive level input terminal and the middle level input terminal; the second electrode terminals are respectively connected to the middle level input terminal and the negative level input terminal.
[0011] The input terminal includes a positive level input terminal and a negative level input terminal; the electrode terminal is arranged between the positive level input terminal and the negative level input terminal.
[0012] The electrode terminals are connected to the positive level input terminal and the negative level input terminal respectively.
[0013] The surface of the packaging structure is also provided with a groove structure, and the electrode terminal is arranged in the groove structure.
[0014] In a second aspect, an embodiment of the utility model provides a power converter, which includes the above-mentioned power semiconductor module and also includes a capacitor; the capacitor is mounted on the surface of the packaging structure of the power semiconductor module, and the capacitor is connected to the electrode terminal on the surface of the packaging structure.
[0015] The power semiconductor module comprises a plurality of power semiconductor modules, and the plurality of power semiconductor modules are connected in parallel.
[0016] The embodiments of the present invention bring the following beneficial effects:
[0017] The above-mentioned power semiconductor module and power converter, the power semiconductor module includes a power semiconductor circuit and a packaging structure; the power semiconductor circuit is packaged inside the packaging structure; the surface of the packaging structure is provided with an input terminal of the power semiconductor circuit; the surface of the packaging structure is also provided with an electrode terminal, the electrode terminal is connected to the input terminal of the power semiconductor circuit; the electrode terminal is used to connect a capacitor device.
[0018] In this method, by setting the electrode end on the surface of the packaging structure, the capacitor device can be installed on the surface of the packaging structure, closer to the input terminal of the power semiconductor circuit inside the module, thereby improving the effect of the capacitor device in absorbing peak voltage; at the same time, the capacitor device is set outside the packaging structure, which is convenient for replacing the capacitor device, has better flexibility and is conducive to heat dissipation.
[0019] Other features and advantages of the utility model will be described in the following description, and partly become apparent from the description, or understood by practicing the utility model. The purpose and other advantages of the utility model are realized and obtained by the structures specifically pointed out in the description, claims and drawings.
[0020] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] In order to more clearly illustrate the specific implementation methods of the utility model or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are some implementation methods of the utility model. For those skilled in the art, other drawings can be obtained based on these drawings without paying any creative work.
[0022] Figure 1 A schematic diagram of an input terminal and an electrode terminal provided in an embodiment of the utility model;
[0023] Figure 2 A schematic diagram of the structure of a power semiconductor module of a first three-level circuit provided by an embodiment of the utility model;
[0024] Figure 3 A side view of a power semiconductor module of a first three-level circuit provided by an embodiment of the utility model;
[0025] Figure 4 A schematic diagram of the connection relationship between a capacitor device and a three-level power semiconductor circuit provided by an embodiment of the utility model;
[0026] Figure 5 A schematic diagram of the structure of a power semiconductor module of a first two-level circuit provided by an embodiment of the utility model;
[0027] Figure 6 A side view of a power semiconductor module of a first two-level circuit provided by an embodiment of the utility model;
[0028] Figure 7 A schematic diagram of the connection relationship between a capacitor device and a two-level power semiconductor circuit provided by an embodiment of the utility model;
[0029] Figure 8 A schematic diagram of the structure of a power semiconductor module of a second three-level circuit provided by an embodiment of the utility model;
[0030] Fig. 9A top view of a power semiconductor module of a second three-level circuit provided by an embodiment of the utility model;
[0031] Fig.10 A schematic diagram of the structure of a power semiconductor module of a second two-level circuit provided by an embodiment of the utility model;
[0032] Fig.11 A top view of a power semiconductor module of a second two-level circuit provided by an embodiment of the utility model. DETAILED DESCRIPTION
[0033] In order to make the purpose, technical solution and advantages of the embodiments of the utility model clearer, the technical solution of the utility model will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the utility model.
[0034] Due to the parasitic inductance between the power semiconductor devices inside the power semiconductor module and the external circuit, a voltage spike will appear when the power semiconductor devices are turned off, which seriously affects the reliable application of the power semiconductor devices.
[0035] In related solutions, capacitors such as film capacitors or chip capacitors are placed on the PCB board outside the module to absorb the voltage spike when shutting down. Since the capacitors are connected to the power semiconductor module through wires on the PCB board, there is still some parasitic inductance between the terminals of the capacitors and the terminals inside the module, and the voltage spike absorption effect is not good.
[0036] In another method, the chip capacitors are placed inside the module. The chip capacitors are packaged together with the power semiconductor devices inside the module, and the chip capacitors are as close to the power terminals inside the module as possible. However, due to the poor high temperature resistance of ceramic capacitors, they are not suitable for the packaging of silicon carbide SIC devices, and are also not conducive to the replacement of chip capacitors.
[0037] Based on the above problems, a power semiconductor module and a power converter provided by the embodiments of the present invention can be applied to packaging modules of various power semiconductor circuits.
[0038] To facilitate understanding of this embodiment, a power semiconductor module disclosed in an embodiment of the utility model is first introduced in detail.
[0039] The power semiconductor module includes a power semiconductor circuit and a packaging structure; the power semiconductor circuit is packaged inside the packaging structure; the power semiconductor circuit here may include a two-level power semiconductor circuit or a three-level power semiconductor circuit; the power semiconductor circuit is usually composed of multiple transistors, diodes, etc.
[0040] The surface of the packaging structure is provided with input terminals of the power semiconductor circuit; the input terminals usually include input terminals of multiple levels; the input terminals are mostly used to input direct current, and the surface of the packaging structure is usually also provided with output terminals of the power semiconductor circuit, and the output terminals are mostly used to output alternating current.
[0041] The surface of the packaging structure is also provided with an electrode terminal, which is connected to the input terminal of the power semiconductor circuit and is used to connect the capacitor device.
[0042] Figure 1 As an example, the surface of the package structure is provided with input terminals and electrode terminals; Figure 1 In the description, three input terminals and four electrode terminals are taken as an example, and the number of input terminals and electrode terminals is not limited in this embodiment.
[0043] It should be noted that the surface of the packaging structure is relative to the interior of the packaging structure. The surface of the packaging structure can be a plane, that is, the capacitor device is directly mounted on one or more planes on the surface of the packaging structure; the surface of the packaging structure can also be provided with slots, grooves, recesses and other structures, and the electrode end is arranged in the structure. In this case, the capacitor device is also considered to be mounted on the surface of the packaging structure.
[0044] After the capacitor device is mounted on the surface of the package structure, it is contacted or connected to the electrode terminal, so that the capacitor device is connected to the input terminal of the power semiconductor circuit.
[0045] In this embodiment, the capacitor mounting structure is arranged on the surface of the packaging structure, so that the capacitor device can be closer to the input terminal of the power semiconductor circuit inside the module, thereby better absorbing the peak voltage.
[0046] The above-mentioned power semiconductor module includes a power semiconductor circuit and a packaging structure; the power semiconductor circuit is packaged inside the packaging structure; the surface of the packaging structure is provided with an input terminal of the power semiconductor circuit; the surface of the packaging structure is also provided with an electrode terminal, the electrode terminal is connected to the input terminal of the power semiconductor circuit; the electrode terminal is used to connect a capacitor device.
[0047] In this method, by setting the electrode end on the surface of the packaging structure, the capacitor device can be installed on the surface of the packaging structure, closer to the input terminal of the power semiconductor circuit inside the module, thereby improving the effect of the capacitor device in absorbing peak voltage; at the same time, the capacitor device is set outside the packaging structure, which is convenient for replacing the capacitor device, has better flexibility and is conducive to heat dissipation.
[0048] In a specific implementation, the input terminal is arranged on a first plane on the surface of the packaging structure; the electrode terminal is arranged on a second plane on the surface of the packaging structure; and the first plane and the second plane are connected.
[0049] refer to Figure 2 The package structure is usually a cubic structure. The surface of the package structure has six planes. The input terminal is arranged on the first plane of the package structure surface, that is, the front side of the module. Figure 2 In the description, an example is given in which the input terminals include a positive level input terminal BUS+, an intermediate level input terminal BUSN and a negative level input terminal BUS-.
[0050] On the second plane of the packaging result surface, two groove structures are set, namely capacitor position 1 and capacitor position 2, and a corresponding electrode terminal is set in each capacitor position. At this time, although the electrode terminal is set in the groove structure, it can also be considered that the electrode terminal is set on the second plane.
[0051] When the area of the first plane is large, the input terminal is usually arranged on the first plane and close to one side of the second plane, so that the input terminal is closer to the capacitor device, thereby improving the effect of the capacitor device in absorbing peak voltage.
[0052] In another embodiment, the input terminal is arranged on a first plane on the surface of the package structure; the electrode terminal is arranged on a second plane on the surface of the package structure; and the first plane and the second plane are arranged opposite to each other. In this case, the first plane and the second plane are not adjacent to each other, and when the package structure is a cubic structure, the first plane and the second plane are parallel to each other.
[0053] The electrode terminal may be directly disposed on the second plane, or may be disposed in a groove structure on the second plane.
[0054] Furthermore, the input terminal includes a plurality of input terminals, and the plurality of input terminals are arranged in sequence; for example, the plurality of input terminals are arranged in a column or a row, etc. The electrode terminal includes one or more, and the electrode terminal is arranged between the plurality of input terminals to make the path between the input terminal and the electrode terminal as short as possible, reduce the length of the electrode terminal, and improve the effect of the capacitor device in absorbing the peak voltage.
[0055] Since the capacitor device needs to be installed between two input terminals, the electrode terminal is disposed between a plurality of input terminals.
[0056] Continue to refer Figure 2 The power semiconductor circuit in the power semiconductor module is a three-level circuit. The input terminal includes a positive level input terminal BUS+, an intermediate level input terminal BUSN and a negative level input terminal BUS-; the electrode end includes a first electrode end and a second electrode end; the first electrode end is arranged between the positive level input terminal and the intermediate level input terminal, and the second electrode end is arranged between the intermediate level input terminal and the negative level input terminal.
[0057] The input terminal is arranged on the first plane. Two groove structures are arranged on the second plane of the packaging structure surface, namely, capacitor position 1 and capacitor position 2, wherein the capacitor position 1 is provided with a first electrode terminal, and the capacitor position 2 is provided with a second electrode terminal.
[0058] A corresponding electrode terminal is arranged in each capacitor position, and the lengths of capacitor position 1 and capacitor position 2 meet the requirements of electrical insulation.
[0059] Capacitor position 1 is set between the positive level input terminal BUS+ and the intermediate level input terminal BUSN, so the first electrode end in capacitor position 1 is set between the positive level input terminal BUS+ and the intermediate level input terminal BUSN. Capacitor position 2 is set between the negative level input terminal BUS- and the intermediate level input terminal BUSN, so the second electrode end in capacitor position 2 is set between the negative level input terminal BUS- and the intermediate level input terminal BUSN.
[0060] The above method can make the distance between the capacitor and the corresponding input terminal closer, reduce the length of the electrode end, and improve the effect of the capacitor absorbing the peak voltage.
[0061] Furthermore, the first electrode terminal is respectively connected to the positive level input terminal and the middle level input terminal; the second electrode terminal is respectively connected to the middle level input terminal and the negative level input terminal.
[0062] Figure 3 for Figure 2 A side view of a three-level power semiconductor module is shown. Capacitor position 1 is arranged between the positive level input terminal BUS+ and the intermediate level input terminal BUSN, and a first electrode terminal is arranged in capacitor position 1, and the first electrode terminal is connected to the positive level input terminal BUS+ and the intermediate level input terminal BUSN.
[0063] Capacitor position 2 is arranged between the negative level input terminal BUS- and the intermediate level input terminal BUSN. Capacitor position 2 is provided with a second electrode end, and the second electrode end is connected to the negative level input terminal BUS- and the intermediate level input terminal BUSN.
[0064] Capacitor position 1 and capacitor position 2 can be respectively placed with chip ceramic capacitors or other types of capacitor devices.
[0065] Figure 4 The figure is a schematic diagram of the connection relationship between the capacitor device and the three-level power semiconductor circuit. Among them, the capacitor 1 is connected between the positive level input terminal BUS+ and the intermediate level input terminal BUSN of the power semiconductor circuit; the capacitor 2 is connected between the negative level input terminal BUS- and the intermediate level input terminal BUSN of the power semiconductor circuit; the output terminal of the power semiconductor circuit is Figure 4 The terminal shown as AC is the AC output terminal.
[0066] The power semiconductor circuit is a bridge arm circuit composed of transistors T11, T21, T31, T41, diodes D11, D21, D31, D41, D51, D61 and other devices.
[0067] In another implementation, refer to Figure 5 The input terminal includes a positive level input terminal BUS+ and a negative level input terminal BUS-; the electrode end is arranged between the positive level input terminal and the negative level input terminal.
[0068] Figure 5 In the power semiconductor module of the two-level circuit shown, the power semiconductor circuit in the power semiconductor module is a two-level circuit, such as a BOOST circuit, having two input terminals. Therefore, it is only necessary to install a capacitor between the two input terminals. Therefore, a capacitor position is set, and an electrode end is set in the capacitor position.
[0069] Figure 6 for Figure 5 A side view of a two-level power semiconductor module. A capacitor position 1 is provided between the positive level input terminal BUS+ and the negative level input terminal BUS-, and an electrode end is provided in the capacitor position 1. The electrode end is connected to the positive level input terminal BUS+ and the negative level input terminal BUS-, respectively.
[0070] Figure 7 The figure is a schematic diagram of the connection relationship between a capacitor device and a two-level power semiconductor circuit, wherein the capacitor 1 is connected between the positive level input terminal BUS+ and the negative level input terminal BUS- of the power semiconductor circuit; the two-level power semiconductor circuit is composed of a transistor T11 and diodes D1 and D2.
[0071] In another implementation, the input terminal and the electrode terminal are arranged on the same plane of the surface of the packaging structure, which can reduce the path length of the electrode terminal, thereby improving the effect of the capacitor device in absorbing the peak voltage.
[0072] exist Figure 8 In the example, the input terminals include a positive level input terminal BUS+, an intermediate level input terminal BUSN, and a negative level input terminal BUS-. Two groove structures are also provided on the plane where the input terminals are located, namely, capacitor position 1 and capacitor position 2. A corresponding electrode terminal is provided in each capacitor position. At this time, although the electrode terminal is provided in the groove structure, it can also be considered that the electrode terminal and the input terminal are provided on the same plane as the surface of the packaging structure.
[0073] Generally, the lengths of capacitor position 1 and capacitor position 2 meet the requirements of electrical insulation. The input terminal and the capacitor position are close to each other.
[0074] Fig. 9 for Figure 8 A top view of a three-level power semiconductor module is shown. Capacitor position 1 is arranged between the positive level input terminal BUS+ and the intermediate level input terminal BUSN, and a first electrode terminal is arranged in capacitor position 1, and the first electrode terminal is connected to the positive level input terminal BUS+ and the intermediate level input terminal BUSN.
[0075] Capacitor position 2 is arranged between the negative level input terminal BUS- and the intermediate level input terminal BUSN; a second electrode terminal is arranged in capacitor position 2, and the second electrode terminal is connected to the negative level input terminal BUS- and the intermediate level input terminal BUSN.
[0076] exist Fig.10 In the example of , the input terminal includes a positive level input terminal BUS+ and a negative level input terminal BUS-; the capacitor position 1 is arranged between the positive level input terminal BUS+ and the negative level input terminal BUS-, and an electrode terminal is arranged in the capacitor position 1. The input terminal and the electrode terminal are on the same plane and are both located on the front side of the module.
[0077] Fig.11 for Fig.10 A plan view of a two-level power semiconductor module is shown. Fig.11 The capacitor position 1 in the figure is provided with an electrode end, and the electrode end is respectively connected to the positive level input terminal BUS+ and the negative level input terminal BUS-.
[0078] The surface of the above packaging structure is also provided with a groove structure, see Figure 2 , Figure 5 , Figure 8 and Fig.10 In the embodiment, the groove structure is a rectangular parallelepiped groove, and the groove structure may also be other shapes. The capacitor device is installed in the groove structure, thereby improving the effect of the capacitor device in absorbing peak voltage.
[0079] In addition to the groove structure, the surface of the package result may also be provided with other structures such as card slots for facilitating the installation of capacitor components.
[0080] The above-mentioned power semiconductor module is provided with a groove on the side or front of the power semiconductor module, and the groove is used to place the chip ceramic capacitor; the chip ceramic capacitor is placed on the side or front of the module, closer to the positive level input terminal BUS+ and the negative level input terminal BUS- in the module, and can better absorb the shutdown voltage spike. At the same time, the chip ceramic capacitor can be replaced externally, has better flexibility, is in contact with the outside world, is farther away from the heat source of the chip, and has a better heat dissipation environment.
[0081] This embodiment also provides a power converter, which includes the power semiconductor module in the above embodiment and also includes a capacitor; the capacitor is mounted on the surface of the packaging structure of the power semiconductor module, and the capacitor is connected to the electrode terminal on the surface of the packaging structure.
[0082] Furthermore, the aforementioned power semiconductor module may include multiple power semiconductor modules, and the multiple power semiconductor modules are connected in parallel.
[0083] It should be noted that the power semiconductor circuit in the power semiconductor module of this embodiment is not limited to a specific circuit topology structure, wherein both three-level and two-level power semiconductor circuits can be applicable to this embodiment.
[0084] The power semiconductor module and power converter provided in this embodiment have electrode terminals located on the surface of the module, so that the capacitor device can be very close to the input terminal inside the module, thereby improving the effect of the capacitor device in suppressing spike voltage; the capacitor device is arranged on the external surface of the module, so the capacitor device can be flexibly replaced, and the capacitor device is in contact with the external air, so the heat dissipation environment is good, which reduces the heat resistance requirements for the chip capacitor.
[0085] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the system and device described above can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here.
[0086] In addition, in the description of the embodiments of the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For those skilled in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0087] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the utility model can be embodied in the form of a software product in essence or in other words, the part that contributes to the prior art or the part of the technical solution. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the utility model. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk and other media that can store program codes.
[0088] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.
[0089] Finally, it should be noted that the above embodiments are only specific implementation methods of the utility model, which are used to illustrate the technical solution of the utility model, rather than to limit it. The protection scope of the utility model is not limited thereto. Although the utility model is described in detail with reference to the above embodiments, those skilled in the art should understand that any technician familiar with the technical field can still modify the technical solution recorded in the above embodiments within the technical scope disclosed by the utility model, or can easily think of changes, or make equivalent replacements for some of the technical features therein; and these modifications, changes or replacements do not make the essence of the corresponding technical solution deviate from the spirit and scope of the technical solution of the embodiment of the utility model, and should be included in the protection scope of the utility model. Therefore, the protection scope of the utility model shall be based on the protection scope of the claims.
Claims
1. A power semiconductor module, characterized in that: The power semiconductor module comprises a power semiconductor circuit and a packaging structure; the power semiconductor circuit is packaged inside the packaging structure; The surface of the packaging structure is provided with an input terminal of the power semiconductor circuit; An electrode terminal is also provided on the surface of the packaging structure, and the electrode terminal is connected to the input terminal of the power semiconductor circuit; the electrode terminal is used to connect a capacitor device.
2. The power semiconductor module according to claim 1, characterized in that: The input terminal is arranged on a first plane on the surface of the packaging structure; the electrode terminal is arranged on a second plane on the surface of the packaging structure; and the first plane and the second plane are connected.
3. The power semiconductor module according to claim 1, characterized in that: The input terminal is arranged on a first plane on the surface of the packaging structure; the electrode terminal is arranged on a second plane on the surface of the packaging structure; and the first plane and the second plane are arranged opposite to each other.
4. The power semiconductor module according to claim 1, characterized in that: The input terminal and the electrode terminal are arranged on the same plane of the surface of the packaging structure.
5. The power semiconductor module according to claim 1, characterized in that: The input terminals include a plurality of terminals, and the plurality of input terminals are arranged in sequence; The electrode terminal includes one or more electrode terminals, and the electrode terminal is disposed between the plurality of input terminals.
6. The power semiconductor module according to claim 5, characterized in that: The input terminals include a positive level input terminal, an intermediate level input terminal and a negative level input terminal; The electrode end includes a first electrode end and a second electrode end; The first electrode terminal is disposed between the positive level input terminal and the intermediate level input terminal, and the second electrode terminal is disposed between the intermediate level input terminal and the negative level input terminal.
7. The power semiconductor module according to claim 6, characterized in that: The first electrode terminal is respectively connected to the positive level input terminal and the intermediate level input terminal; The second electrode terminal is connected to the intermediate level input terminal and the negative level input terminal respectively.
8. The power semiconductor module according to claim 4, characterized in that: The input terminal includes a positive level input terminal and a negative level input terminal; The electrode terminal is disposed between the positive level input terminal and the negative level input terminal.
9. The power semiconductor module according to claim 8, characterized in that: The electrode terminals are connected to the positive level input terminal and the negative level input terminal respectively.
10. The power semiconductor module according to claim 1, characterized in that: A groove structure is also provided on the surface of the packaging structure, and the electrode terminal is arranged in the groove structure.
11. A power converter, characterized in that: The power converter comprises the power semiconductor module according to any one of claims 1 to 10, and further comprises a capacitor device; The capacitor device is mounted on the surface of the packaging structure of the power semiconductor module, and the capacitor device is connected to an electrode terminal on the surface of the packaging structure.
12. The power converter according to claim 11, characterized in that: The power semiconductor module comprises a plurality of power semiconductor modules, and the plurality of power semiconductor modules are connected in parallel.