Wafer deposition covering ring

Abstract

The utility model discloses a wafer deposition covering ring comprising a ring body, and the inner wall of the ring body is provided with a circular groove. An inner ring is arranged on the bottom wall of the ring body and is of an annular structure concentric with the ring body, and the section of the inner ring is in an L shape. The heat dissipation speed is remarkably improved, overhigh temperature accumulation is prevented, the stable temperature in the technological process is kept, the problems of whiskers and black spots caused by overhigh temperature are avoided, and therefore the product yield is improved. Through the design of the different grooves in the two faces of the bottom wall of the ring body, the ring body can dissipate heat more quickly in the implementation process, the cooling time is shortened, the process instability caused by temperature fluctuation can be further reduced, and the stability and reliability of the process are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of wafer deposition cover rings, in particular to a wafer deposition cover ring. Background Art

[0002] In the manufacturing process of semiconductor components, they are all made by processing wafers, and physical vapor deposition technology refers to the technology of depositing a thin film with certain special functions on the surface of the substrate by physical methods under vacuum conditions.

[0003] After searching, the Chinese patent with the announcement number CN207738840U discloses a wafer deposition cover ring, which proposes a technical solution that can control the shape of the deposited film formed by the deposition material by designing the ring fixing groove (4) on the deposition cover ring;

[0004] The Chinese patent with announcement number CN214271030U discloses a wafer deposition cover ring, which proposes adding a knurling layer to the particle layer to prevent wafer scrapping and improve the yield rate;

[0005] However, when the AMAT_300mm_Endura 2HP AL Chamber of Applied Materials is performing physical vapor deposition, the chamber needs to be processed at a stable high temperature. The ESC heater temperature is set at 250°C, and the AL PAD process temperature window is narrow. Too high a temperature will cause whiskers, and too low a temperature will cause black spots, both of which will affect the yield.

[0006] Including the integrated inner ring, increasing the number of screws and the water-cooling adapter for full contact can achieve the purpose of cooling. However, if the film is run continuously, there is no time for cooling and the temperature will continue to rise. How to improve the heat dissipation effect of the cover ring and drive the yield rate and process stability is an urgent problem that needs to be solved. Utility Model Content

[0007] The utility model aims to solve the defects in the prior art and proposes a wafer deposition cover ring.

[0008] In order to achieve the above purpose, the utility model adopts the following technical solutions:

[0009] A wafer deposition cover ring comprises a ring body, wherein the inner wall of the ring body is provided with a circular groove;

[0010] An inner ring is arranged on the bottom wall of the ring body. The inner ring is an annular structure with the same center as the ring body, and the cross section of the inner ring is L-shaped.

[0011] Furthermore, the inner ring is provided with annular fixing grooves which are evenly distributed. The fixing grooves are trapezoidal structures with a cross-section inclination angle of 20°. The fixing grooves are distributed at intervals of 120° with the center of the ring body as a reference.

[0012] Furthermore, a plurality of improved grooves are arranged between the inner ring and the inner wall of the ring body and are evenly distributed in an annular manner, and the center of the annular distribution is the same as the center of the ring body.

[0013] Furthermore, the improved groove is a rectangular structure with rounded ends, and the bottom wall of the improved groove is on the same horizontal line as the bottom wall of the fixed groove.

[0014] Compared with the prior art, the beneficial effects of the present invention are:

[0015] By setting up improved grooves, the heat dissipation area is increased, the heat dissipation speed is significantly improved, excessive temperature accumulation is prevented, a stable temperature is maintained during the process, and whisker and black spot problems caused by excessive temperature are avoided, thereby improving the product yield.

[0016] By setting the improved grooves in a ring distribution form, the cover ring can have a larger contact area faster during the implementation process, which improves the heat dissipation capacity of the cover ring itself, reduces the cooling time while reducing the overall weight of the cover ring, thereby improving the output rate and production efficiency. At the same time, the stable temperature and faster heat dissipation performance reduce the heat load of the equipment, extend the service life of the equipment, and thus reduce the maintenance and replacement costs;

[0017] By improving heat dissipation efficiency and reducing process defects, it can help improve product yield, reduce scrap rate, save production costs, and further reduce process instability caused by temperature fluctuations, thereby improving process stability and reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. They are used together with the embodiments of the present invention to explain the present invention and do not constitute a limitation to the present invention.

[0019] Figure 1 It is a schematic diagram of the overall structure of the wafer deposition cover ring in the embodiment of the utility model;

[0020] Figure 2 for Figure 1 Cross-sectional diagram in .

[0021] In the figure: 1. ring body; 2. circular groove; 3. inner ring; 4. fixed groove; 5. improved groove. DETAILED DESCRIPTION

[0022] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments.

[0023] Reference Figure 1-2 , a wafer deposition cover ring, comprising a ring body 1, an inner wall of which is provided with a circular groove 2;

[0024] An inner ring 3 is arranged on the bottom wall of the ring body 1. The inner ring 3 is an annular structure having the same center as the ring body 1. The cross section of the inner ring 3 is L-shaped.

[0025] In a specific embodiment of the present application, the inner ring 3 is provided with annular equidistantly distributed fixing grooves 4, the fixing grooves 4 are trapezoidal structures with a cross-sectional inclination angle of 20°, and the fixing grooves 4 are distributed at intervals of 120° with the center of the ring body 1 as a reference.

[0026] It is not difficult to see from the above design that the fixing groove 4 is used to fix the cover ring during use, so that the entire cover ring can be used more stably.

[0027] Furthermore, a plurality of improved grooves 5 are arranged between the inner ring 3 and the inner wall of the ring body 1 and are evenly distributed in an annular manner, and the center of the annular distribution is the same as the center of the ring body 1 .

[0028] It is not difficult to see from the above design that by digging a plurality of uniform dry improved grooves 5, and the improved grooves 5 are equidistantly distributed in a ring between the inner ring 3 and the ring body, the contact area can be effectively increased, the heat dissipation area can be expanded, the heat dissipation speed can be significantly improved, and excessive temperature accumulation can be prevented to maintain a stable temperature during the process.

[0029] The improved groove 5 is a rectangular structure with rounded ends, and the bottom wall of the improved groove 5 is on the same horizontal line as the bottom wall of the fixing groove 4 .

[0030] It should be noted that the length, depth and width of the improved groove 5 can be determined according to the thickness of the ring body 1 to ensure that the improved groove 5 can be easily cleaned.

[0031] The improved grooves 5 are several annular grooves equidistantly distributed between the ring body 1 and the inner ring 3, which can effectively reduce the overall weight of the covering ring and expand the contact area between the ring body 1 and the inner ring 3, thereby improving the heat dissipation performance.

[0032] It is not difficult to see from the above design that the improved groove 5 has a certain groove depth, which can increase the cooling speed through a larger heat dissipation area and obtain a more stable temperature during continuous chip running, thus greatly improving the problem of serious particle variation between chips.

[0033] By improving the groove 5, the heat dissipation area during the implementation process can be improved without changing the proof shape of the cover ring, without affecting the process result, thereby increasing the production capacity and further increasing the life span, thereby achieving the purpose of reducing costs.

[0034] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes within the technical scope disclosed by the present invention according to the technical scheme and the utility model concept of the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A wafer deposition cover ring, characterized in that: It comprises a ring body (1), the inner wall of which is provided with a circular groove (2); An inner ring (3) is arranged on the bottom wall of the ring body (1); the inner ring (3) is an annular structure having the same center as the ring body (1); and the cross section of the inner ring (3) is L-shaped.

2. The wafer deposition cover ring according to claim 1, characterized in that: The inner ring (3) is provided with annular fixing grooves (4) which are evenly distributed. The fixing grooves (4) are trapezoidal structures with a cross-section tilt angle of 20°. The fixing grooves (4) are distributed at intervals of 120° with the center of the ring body (1) as the reference.

3. The wafer deposition cover ring according to claim 2, characterized in that: A plurality of improved grooves (5) are arranged between the inner ring (3) and the inner wall of the ring body (1) and are evenly distributed in an annular shape, and the center of the annular distribution is the same as the center of the ring body (1).

4. The wafer deposition cover ring according to claim 3, characterized in that: The improved groove (5) is a rectangular structure with rounded ends, and the bottom wall of the improved groove (5) and the bottom wall of the fixing groove (4) are on the same horizontal line.

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