Surface planarization mechanism
By designing a surface planarization mechanism including a plasma treatment device, a carrier device and an adjustment device, the problems of high operation difficulty, high cost and difficult maintenance of surface planarization in the existing plasma etching technology are solved, and high precision and efficient planarization treatment are achieved.
Patent Information
- Application Number
- CN202421709993.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-18
- Publication Date
- 2025-05-20
- Estimated Expiration
- 2034-07-18
AI Technical Summary
The existing plasma etching technology has problems such as high operational difficulty, high process cost and difficult maintenance of accuracy in surface planarization.
A surface planarization mechanism is designed, including a plasma treatment device, a load bearing device and an adjustment device. Through the rotation adjustment unit and the first single-axis adjustment unit, the plasma nozzle flattens the surface to be processed in a loop, and combines the positioning detection unit and the control unit to achieve accurate position adjustment and flatness control.
It effectively reduces operational difficulty and process cost, improves the high-precision and smooth processing efficiency of the process, and simplifies the process mechanism.
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Figure CN222887851U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of plasma etching technology, and particularly to a surface planarization mechanism. Background Art
[0002] Plasma etching technology is widely used in semiconductor manufacturing and the manufacturing process of microelectromechanical systems (MEMS). Particularly in improving the surface flatness of the processed articles, it has proven to be an effective technology. Its main principle is to selectively remove a part of the material surface using high-energy plasma, thereby achieving the purpose of planarizing the surface of the processed articles.
[0003] However, since the plasma nozzle cannot stop the plasma spraying during the etching process, and the surface flatness of the processed articles to be processed usually belongs to the non-linear distribution condition, that is, the height difference may be quite large. Therefore, the existing plasma etching methods require extremely complex algorithms and precise plasma etching mechanisms to maintain the precision of the planarization process, resulting in problems such as high operation difficulty, high process cost, and difficulty in maintaining precision in the existing plasma etching methods. Summary of the Utility Model
[0004] Based on this, it is necessary to provide a surface planarization mechanism for the problems of high operation difficulty, high process cost, and difficulty in maintaining precision in the existing planarization process using plasma etching methods.
[0005] A surface planarization mechanism, which can planarize the surface to be processed of the object to be processed according to the surface flatness data of the object to be processed. The surface planarization mechanism includes:
[0006] A plasma processing device, including a plasma nozzle, for planarizing the surface to be processed of the object to be processed;
[0007] A carrying device, arranged adjacent to the plasma processing device in the vertical direction. The carrying device is for placing the object to be processed and making the object to be processed corresponding to the position of the plasma nozzle; and
[0008] An adjustment device, arranged on the side of the carrying device away from the plasma processing device. The adjustment device includes a rotation adjustment unit and a first single-axis adjustment unit. The rotation adjustment unit is connected to the carrying device and rotates around the center of the surface to be processed. The first single-axis adjustment unit is connected to the rotation adjustment unit and can control the object to be processed to perform single-axis linear movement, and make the plasma nozzle pass through the center of the surface to be processed.
[0009] In one embodiment, the plasma processing device has a positioning member, which is slidably connected to the plasma nozzle, and the positioning member is used to adjust the height of the plasma nozzle relative to the carrying device.
[0010] In one embodiment, the carrying device includes an adsorbing member, and the adsorbing member is used to adsorb and fix the object to be processed.
[0011] In one embodiment, the first single-axis adjustment unit has a first slide rail and a first slide block, and the first slide block is connected to the rotation adjustment unit and slidably disposed on the first slide rail along a first single-axis direction.
[0012] In one embodiment, the adjustment device further includes a positioning detection unit and a second single-axis adjustment unit. The positioning detection unit is coupled to the first single-axis adjustment unit and the second single-axis adjustment unit. The positioning detection unit detects the position of the object to be processed and correspondingly outputs object position information. The first single-axis adjustment unit performs position adjustment on the object to be processed along the first single-axis direction according to the object position information; the second single-axis adjustment unit is connected to a side of the rotation adjustment unit away from the carrying device, and the second single-axis adjustment unit performs position adjustment on the object to be processed along a second single-axis direction perpendicular to the first single-axis direction according to the object position information.
[0013] In one embodiment, the second single-axis adjustment unit has a second slide rail and a second slide block. The second slide rail is disposed on the first slide block, and the second slide block is connected to the rotation adjustment unit and slidably disposed on the second slide rail along the second single-axis direction.
[0014] In one embodiment, the adjustment device has a control unit, and the control unit is coupled to the rotation adjustment unit, the first single-axis adjustment unit, and the second single-axis adjustment unit. The control unit controls the rotation speed of the rotation adjustment unit according to the surface flatness data, and controls the moving distances of the first single-axis adjustment unit and the second single-axis adjustment unit.
[0015] In one embodiment, a flatness detection device is further included. The flatness detection device is disposed on one side of the plasma processing device and coupled to the adjustment device. The flatness detection device detects the flatness of the surface to be processed and outputs the surface flatness data to the adjustment device.
[0016] In one embodiment, the surface planarization mechanism is disposed in a process chamber, the process chamber includes a detection area and a working area, the flatness detection device is disposed in the detection area, the plasma processing device is disposed in the working area, and the carrying device reciprocates between the detection area and the working area through the first single-axis adjustment unit.
[0017] In one embodiment, the surface planarization mechanism is disposed in a process chamber, the process chamber includes a working area, and the flatness detection device and the plasma processing device selectively enter the working area. The carrying device and the adjustment device are disposed in the working area.
[0018] The above-mentioned surface planarization mechanism flattens the surface to be processed in a circular motion by means of a rotation adjustment unit and a first single-axis adjustment unit in cooperation with a plasma nozzle, thereby effectively achieving the purposes of reducing the operation difficulty, reducing the process cost, maintaining high process precision, and simplifying the process mechanism. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] Figure 1 It is a three-dimensional schematic diagram of the position of the surface planarization mechanism in an embodiment of the present application.
[0020] Figure 2 It is a front view perspective schematic diagram of the position of the surface planarization mechanism in an embodiment of the present application.
[0021] Figure 3 It is a three-dimensional schematic diagram of the surface planarization mechanism in an embodiment of the present application, used to show the rotation of the rotation adjustment unit.
[0022] Figure 4 It is a front view perspective schematic diagram of the surface planarization mechanism in an embodiment of the present application, used to show the movement of the first single-axis adjustment unit along the first single-axis direction.
[0023] Figure 5 is Figure 4 a partial enlarged view of, used to show the uneven state of the surface to be processed.
[0024] Figure 6 It is a side view perspective schematic diagram of the surface planarization mechanism in an embodiment of the present application, used to show the movement of the second single-axis adjustment unit along the second single-axis direction.
[0025] Figure 7 It is a side view perspective schematic diagram of the surface planarization mechanism in an embodiment of the present application, used to show the movement of the positioning member along the moving direction.
[0026] Figure 8 It is a frame schematic diagram of the adjustment device and the flatness detection device of the surface planarization mechanism in an embodiment of the present application.
[0027] Description of the attached reference numerals:
[0028] 100, surface planarization mechanism; 200, object to be processed; 210, surface to be processed; 300, processing chamber; 310, detection area; 320, working area; 10, plasma processing device; 11, plasma nozzle; 12, positioning member; 20, carrier device; 21, suction member; 30, adjustment device; 31, rotation adjustment unit; 32, first single-axis adjustment unit; 321, first slide rail; 322, first slide block; 33, positioning and detection unit; 34, second single-axis adjustment unit; 341, second slide rail; 342, second slide block; 35, control unit; 40, flatness detection device. Detailed implementation manners
[0029] In order to make the above objects, features, and advantages of the present application more obvious and understandable, the following will describe the detailed implementation manners of the present application with reference to the accompanying drawings. Many specific details are set forth in the following description to facilitate a thorough understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without departing from the connotation of the present application. Therefore, the present application is not limited by the specific embodiments disclosed below.
[0030] In the description of the present application, it should be understood that if these terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or positional relationship indicated by these terms is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus cannot be understood as a limitation to the present application.
[0031] In addition, if these terms "first" and "second" appear, these terms are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of the said features. In the description of the present application, if the term "plural" appears, the meaning of "plural" is at least two, such as two, three, etc., unless otherwise specifically and clearly defined.
[0032] In this application, unless otherwise clearly defined and limited, if terms such as "installed", "connected", "linked", "fixed", etc. appear, these terms should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or integrated; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the communication inside two components or the interaction relationship between two components, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0033] In this application, unless otherwise clearly defined and limited, if there is a description such as a first feature being "on" or "under" a second feature, its meaning can be that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature being "above", "over" and "on" the second feature can be that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is at a higher horizontal height than the second feature. The first feature being "under", "beneath" and "under" the second feature can be that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is at a lower horizontal height than the second feature.
[0034] Please refer to Figures 1 to 8 As shown, it discloses a surface planarization mechanism 100 of an embodiment of this application, which can perform planarization processing on a to-be-processed surface 210 of a to-be-processed object 200 according to a surface flatness data of the to-be-processed object 200. The surface planarization mechanism 100 includes a plasma processing device 10, a carrying device 20, and an adjusting device 30. Among them, the surface planarization mechanism 100 is arranged in a process cavity 300, and the inside of the process cavity 300 can be an atmospheric environment or a negative pressure environment; the to-be-processed object 200 can be a circuit composite carrier (such as a circuit board [PCB], a flexible printed circuit board [FPC], etc.), a wafer or a chip, etc., which are objects that need to be planarized.
[0035] The plasma processing device 10 includes a plasma nozzle 11 for performing planarization processing on the to-be-processed surface 210 of the to-be-processed object 200. Please refer to Figure 3 and Figure 7 As shown, in the embodiment of this application, the plasma processing device 10 has a positioning member 12, which is slidably connected to the plasma nozzle 11. The positioning member 12 can move along a moving direction Z to adjust the height of the plasma nozzle 11 relative to the carrying device 20, so that the plasma nozzle 11 performs planarization processing on the to-be-processed surface 210 of the to-be-processed object 200 at the best process position, and improves the accuracy of the planarization processing.
[0036] The carrying device 20 is disposed adjacent to the plasma processing device 10 in a vertical direction. The carrying device 20 is for placing the object to be processed 200, and positions the object to be processed 200 corresponding to the position of the plasma nozzle 11. Please refer to Figure 4 and Figure 5 As shown, in the embodiment of the present application, the carrying device 20 includes an adsorbing member 21 for adsorbing and fixing the object to be processed 200, but not limited thereto. The object to be processed 200 can also be fixed on the carrying device 20 by means of adhesion, sticking, etc., so as to reduce the probability of the object to be processed 200 shifting during movement.
[0037] The adjusting device 30 is disposed on a side of the carrying device 20 away from the plasma processing device 10. The adjusting device 30 includes a rotation adjusting unit 31 and a first single-axis adjusting unit 32. The rotation adjusting unit 31 is connected to the carrying device 20 and rotates around the center of the surface to be processed 210; the first single-axis adjusting unit 32 is connected to the rotation adjusting unit 31 and can control the object to be processed 200 to perform a single-axis linear movement, and enable the plasma nozzle 11 to pass through the center of the surface to be processed 210.
[0038] Please refer to Figure 3 and Figure 4 As shown, in the embodiment of the present application, the first single-axis adjusting unit 32 has a first slide rail 321 and a first slide block 322. The first slide block 322 is connected to the rotation adjusting unit 31 and slides on the first slide rail 321 along a first single-axis direction X. With the high adjustment accuracy of the sliding track, the first single-axis adjusting unit 32 can be, for example, a linear slide rail, thereby controlling the accuracy of movement within an error of plus or minus 0.5 mm, achieving the purpose of improving the adjustment accuracy of the carrying device 20 and the flatness processing accuracy.
[0039] Please refer to Figures 3 to 8 As shown, in the embodiment of the present application, the adjusting device 30 further includes a positioning detection unit 33 and a second single-axis adjusting unit 34. The positioning detection unit 33 is coupled to the first single-axis adjusting unit 32 and the second single-axis adjusting unit 34. The positioning detection unit 33 detects the position of the object to be processed 200 and outputs an object position information correspondingly; the first single-axis adjusting unit 32 adjusts the position of the object to be processed 200 along the first single-axis direction X according to the object position information; the second single-axis adjusting unit 34 is connected to a side of the rotation adjusting unit 31 away from the carrying device 20, and the second single-axis adjusting unit 34 adjusts the position of the object to be processed 200 along a second single-axis direction Y perpendicular to the first single-axis direction X according to the object position information. Thereby, the positioning detection unit 33 can detect and correct the position of the object to be processed 200 in advance before the plasma nozzle 11 performs flatness processing on the surface to be processed 210, so as to improve the overall flatness processing accuracy.
[0040] Please refer to Figure 3 and Figure 6 As shown, in the embodiment of the present application, the second single-axis adjustment unit 34 has a second slide rail 341 and a second slide block 342. The second slide rail 341 is provided on the first slide block 322; the second slide block 342 is connected to the rotation adjustment unit 31 and slidably disposed on the second slide rail 341 along the second single-axis direction Y, so as to achieve the purpose of improving the adjustment accuracy of the loading device 20 and the planarization processing accuracy by means of the high adjustment accuracy of the sliding track (the error is within plus or minus 0.5 mm).
[0041] Please refer to Figures 3 to 8 As shown, in the embodiment of the present application, the adjustment device 30 has a control unit 35. The control unit 35 is coupled to the rotation adjustment unit 31, the first single-axis adjustment unit 32, the positioning detection unit 33 and the second single-axis adjustment unit 34. Before the plasma nozzle 11 performs planarization processing on the surface to be processed 210, the control unit 35 can receive the object position information and control the moving distances of the first single-axis adjustment unit 32 and the second single-axis adjustment unit 34 to perform position correction on the object to be processed 200; when the plasma nozzle 11 performs planarization processing on the surface to be processed 210, the control unit 35 controls the rotation speed of the rotation adjustment unit 31 according to the surface flatness data and controls the moving distance of the first single-axis adjustment unit 32 to precisely perform planarization processing on the surface to be processed 210.
[0042] Please refer to Figure 1 、 Figure 2 and Figure 8 As shown, in the embodiment of the present application, the present application further includes a flatness detection device 40, which is disposed on one side of the plasma processing device 10 and coupled to the adjustment device 30. The flatness detection device 40 detects the flatness of the surface to be processed 210 and outputs the surface flatness data to the adjustment device 30 for the control unit 35 of the adjustment device 30 to perform corresponding control on the other units. Among them, the flatness detection device 40 can be a thickness gauge in one embodiment.
[0043] Please refer to Figure 1 、 Figure 2 and Figure 8 As shown, in the embodiment of the present application, the process chamber 300 includes a detection area 310 and a working area 320. The flatness detection device 40 is disposed in the detection area 310, and the plasma processing device 10 is disposed in the working area 320. The loading device 20 reciprocates between the detection area 310 and the working area 320 through the first single-axis adjustment unit 32, so that the object to be processed 200 completes the planarization processing.
[0044] In another embodiment of the present application, the process chamber 300 can be integrated to only include a working area 320. The flatness detection device 40 and the plasma processing device 10 selectively enter the working area 320, and the carrier device 20 and the adjustment device 30 are arranged in the working area 320. For further illustration, the carrier device 20 and the adjustment device 30 can be set to be fixed in the working area 320, while the plasma processing device 10 and the flatness detection device 40 can selectively enter the working area 320 through a moving structure (not shown in the figure) according to the processing requirements. That is, by adjusting the position, the plasma processing device 10 and the flatness detection device 40 are aligned with the object to be processed 200 on the carrier device 20. For example, before the planarization process of the surface to be processed 210, the flatness detection device 40 can be moved to a position where the object to be processed 200 can be detected through the moving structure to perform the flatness detection process of the surface to be processed 210. After the flatness detection device 40 completes the flatness detection process, the flatness detection device 40 leaves through the moving structure, and then the plasma processing device 10 moves to a position where the object to be processed 200 can be subjected to the plasma etching process through the moving structure to continue the planarization process of the surface to be processed 210. Thereby, the carrier device 20 and the adjustment device 30 only make small movements in the working area 320 and do not make large movements such as leaving the working area 320, so as to avoid the situation that the object to be processed 200 is displaced due to large movements.
[0045] Please refer to Figures 3 to 7 As shown, in the embodiment of the present application, the rotation adjustment unit 31 rotates the object to be processed 200 so that the plasma nozzle 11 performs a planarization process on the surface to be processed 210 in a circular motion. Moreover, when the rotation adjustment unit 31 rotates, the control unit 35 controls the first single-axis adjustment unit 32 to move along the first single-axis direction X, so that the radial position of the plasma nozzle 11 relative to the object to be processed 200 moves from the center of the surface to be processed 210 along the radial direction of the surface to be processed 210 towards the outer periphery of the surface to be processed 210. In this way, when the plasma nozzle 11 is fixed, through the rotation of the object to be processed 200 and the translation passing through the center, all areas of the object to be processed 200 can be contacted to complete the planarization process of the surface to be processed 210.
[0046] Among them, please refer to Figures 3 to 7As shown, when the plasma nozzle 11 performs planarization on the surface 210 to be processed, the control unit 35 controls the rotation speed of the rotation adjustment unit 31 according to the surface flatness data. For example, when the surface flatness data shows that the height of the surface 210 to be processed at the position where the plasma nozzle 11 is located is relatively high (i.e., the flatness is low and significant etching is required), the control unit 35 controls the rotation speed of the rotation adjustment unit 31 to decrease, so that the plasma nozzle 11 performs planarization on the surface 210 at the current position for a longer time; when the surface flatness data shows that the height of the surface 210 to be processed at the position where the plasma nozzle 11 is located is relatively low (i.e., the flatness is high and significant etching is not required), the control unit 35 controls the rotation speed of the rotation adjustment unit 31 to increase, so that the plasma nozzle 11 performs planarization on the surface 210 at the current position for a shorter time. Thus, through speed control, the processing efficiency and processing accuracy of the overall planarization can be improved.
[0047] Thus, the present application has the following advantages:
[0048] 1. The present application uses a simple rotation adjustment unit 31 and a first single-axis adjustment unit 32 to make the plasma nozzle 11 perform planarization on the surface 210 to be processed in a circular motion, so as to achieve the purposes of reducing the operation difficulty, reducing the process cost, maintaining high process precision, and simplifying the process mechanism.
[0049] 2. The carrying device 20 of the present application fixes the object 200 to be processed by adsorption, which can reduce the probability of the object 200 to be processed shifting during movement.
[0050] 3. Both the first single-axis adjustment unit 32 and the second single-axis adjustment unit 34 of the present application are linear slide rail structures, so that the adjustment precision of the carrying device 20 and the planarization processing precision can be improved by the high adjustment precision (the error is within plus or minus 0.5 mm) of the sliding track.
[0051] 4. The positioning detection unit 33 of the present application can detect and correct the position of the object 200 to be processed in advance before the plasma nozzle 11 performs planarization on the surface 210 to be processed, so as to improve the accuracy of the overall planarization.
[0052] 5. The present application can also reduce the position movement of the carrying device 20 and the adjustment device 30 by adjusting the flatness detection device 40 and the movement of the plasma processing device 10, and avoid the problem of inaccurate alignment of the object 200 to be processed during plasma etching due to the movement of the carrying device 20 and the adjustment device 30.
[0053] The above-described embodiments merely represent several implementation manners of the present application. The description thereof is relatively specific and detailed, but it should not be construed as a limitation to the scope of the patented application. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all fall within the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.
Claims
1. A surface flattening mechanism, characterized in that: The surface flattening mechanism can flatten the surface to be processed of the object to be processed according to the surface flatness data of the object to be processed, and the surface flattening mechanism includes: A plasma processing device, comprising a plasma nozzle, for flattening the surface to be processed of the object to be processed; A carrying device is disposed adjacent to the plasma processing device in a vertical direction, the carrying device is used to place the object to be processed, and the object to be processed is positioned to correspond to the position of the plasma nozzle; and The adjustment device is arranged on a side of the carrier device away from the plasma processing device, and the adjustment device includes a rotation adjustment unit and a first uniaxial adjustment unit. The rotation adjustment unit is connected to the carrier device and rotates with the center of the surface to be processed as the center of the circle. The first uniaxial adjustment unit is connected to the rotation adjustment unit and can control the object to be processed to move in a uniaxial linear manner and enable the plasma nozzle to pass through the center of the surface to be processed.
2. The surface flattening mechanism according to claim 1, characterized in that: The plasma processing device has a positioning member, the positioning member is slidably connected to the plasma shower head, and the positioning member is used to adjust the height of the plasma shower head relative to the supporting device.
3. The surface flattening mechanism according to claim 1, characterized in that: The carrying device comprises a suction piece, and the suction piece is used for suctioning and fixing the object to be processed.
4. The surface flattening mechanism according to claim 1, characterized in that: The first uniaxial adjustment unit has a first slide rail and a first slide seat. The first slide seat is connected to the rotation adjustment unit and is slidably disposed on the first slide rail along a first uniaxial direction.
5. The surface flattening mechanism according to claim 4, characterized in that: The adjustment device also includes a positioning detection unit and a second uniaxial adjustment unit, the positioning detection unit is coupled to the first uniaxial adjustment unit and the second uniaxial adjustment unit, the positioning detection unit detects the position of the object to be processed and outputs object position information accordingly, the first uniaxial adjustment unit adjusts the position of the object to be processed along the first uniaxial direction according to the object position information; the second uniaxial adjustment unit is connected to a side of the rotation adjustment unit away from the carrying device, the second uniaxial adjustment unit adjusts the position of the object to be processed along a second uniaxial direction perpendicular to the first uniaxial direction according to the object position information.
6. The surface flattening mechanism according to claim 5, characterized in that: The second uniaxial adjustment unit has a second slide rail and a second slide seat. The second slide rail is arranged on the first slide seat. The second slide seat is connected to the rotation adjustment unit and is slidably arranged on the second slide rail along the second uniaxial direction.
7. The surface flattening mechanism according to claim 5, characterized in that: The adjustment device has a control unit, which is coupled to the rotation adjustment unit, the first uniaxial adjustment unit and the second uniaxial adjustment unit. The control unit controls the rotation speed of the rotation adjustment unit according to the surface flatness data, and controls the movement distance of the first uniaxial adjustment unit and the second uniaxial adjustment unit.
8. The surface flattening mechanism according to claim 5, characterized in that: The device also includes a flatness detection device, which is disposed on one side of the plasma processing device and coupled to the adjustment device. The flatness detection device detects the flatness of the surface to be processed and outputs the surface flatness data to the adjustment device.
9. The surface flattening mechanism according to claim 8, characterized in that: The surface flattening mechanism is disposed in a process chamber, the process chamber includes a detection area and a working area, the flatness detection device is disposed in the detection area, the plasma processing device is disposed in the working area, and the carrying device reciprocates between the detection area and the working area through the first uniaxial adjustment unit.
10. The surface flattening mechanism according to claim 8, characterized in that: The surface flattening mechanism is disposed in a process chamber, the process chamber includes a working area, the flatness detection device and the plasma processing device selectively enter the working area, and the carrying device and the adjusting device are disposed in the working area.