Silicon wafer side edge detection device

By designing a detection device that uses two sets of parallel conveyor belts to synchronize the silicon wafers and setting up multiple detection stations on the conveying path, synchronous side detection of the two silicon wafers is achieved, solving the problem of low detection efficiency in the prior art and significantly improving the detection efficiency.

CN222896673UActive Publication Date: 2025-05-23WUXI AUTOWELL TECH
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Patent Information

Application Number
CN202420806662.7
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-04-18
Publication Date
2025-05-23
Estimated Expiration
2034-04-18

AI Technical Summary

Technical Problem

The existing silicon wafer side detection devices have low detection efficiency and can only detect one silicon wafer, resulting in low detection efficiency during production.

Method used

A silicon wafer side detection device is designed, using two sets of parallel conveyor belts to synchronize the transmission of two silicon wafers, and a first side edge detection station and a second side edge detection station are set on the conveying path to realize synchronous side detection of the two silicon wafers.

Benefits of technology

Through synchronous conveying and detection, the side detection efficiency of silicon wafers is significantly improved, and two silicon wafers can be detected simultaneously, improving the detection efficiency during the production process.

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Abstract

The utility model provides a silicon wafer side edge detection device. The silicon wafer side edge detection device comprises a silicon wafer conveying line, a first side edge detection part and a second side edge detection part. The silicon wafer conveying line synchronously conveys a first silicon wafer and a second silicon wafer, and a conveying path of the silicon wafer conveying line is provided with a first side edge detection station and a second side edge detection station. The first side edge detection part is configured to detect the two side edges of the first silicon wafer located at the first side edge detection station; and the second side edge detection part is configured to detect the two side edges of the second silicon wafer located at the second side edge detection station. According to the silicon wafer side edge detection device provided by the invention, the silicon wafer conveying line can synchronously convey two silicon wafers, the first side edge detection station and the second side edge detection station are arranged on the conveying path of the silicon wafer conveying line, and the two synchronously conveyed silicon wafers are subjected to side edge detection at the first side edge detection station and the second side edge detection station in sequence; and the side edge detection efficiency of the silicon wafer is improved.
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Description

Technical Field

[0001] The present application relates to the field of photovoltaic cell production, and specifically to a silicon wafer side edge detection device. Background Art

[0002] In the production process of solar silicon wafers, the silicon rods need to be cut into silicon wafers first, then the silicon wafers need to be cleaned, and then the silicon wafers need to be inspected. One of the inspections of silicon wafers is to inspect both sides of the silicon wafer (the two sides of the edges parallel to the conveying direction of the silicon wafer) to detect whether there are defects such as edge collapse and holes on both sides of the silicon wafer.

[0003] The existing silicon wafer side edge detection device has only one side edge detection station on the silicon wafer conveyor line, and the silicon wafer conveyor line can only carry and convey one silicon wafer, and the silicon wafer conveyor line conveys the silicon wafers one by one to the side edge detection station for detection. The existing silicon wafer side edge detection device has low detection efficiency. Utility Model Content

[0004] In order to solve the above technical problems, the present application provides a silicon wafer side edge detection device, which adopts the following technical solutions:

[0005] A silicon wafer side edge detection device comprises a silicon wafer conveying line, a first side edge detection unit and a second side edge detection unit, wherein:

[0006] The silicon wafer conveying line is configured to convey a first silicon wafer and a second silicon wafer synchronously along a first direction, wherein the first silicon wafer and the second silicon wafer are placed side by side along a second direction, and the second direction is perpendicular to the first direction;

[0007] A first side edge detection station and a second side edge detection station are sequentially arranged on the conveying path of the silicon wafer conveying line;

[0008] The first side edge detection unit is disposed at the first side edge detection station and is configured to detect the two side edges of the first silicon wafer located at the first side edge detection station;

[0009] The second side edge detection unit is disposed at the second side edge detection station and is configured to detect the two side edges of the second silicon wafer located at the second side edge detection station.

[0010] The silicon wafer side edge detection device provided by the present application is capable of synchronously conveying two silicon wafers on a silicon wafer conveyor line. A first side edge detection station and a second side edge detection station are provided on the conveying path of the silicon wafer conveyor line. The two synchronously conveyed silicon wafers are successively subjected to side edge detection at the first side edge detection station and the second side edge detection station. Since the first side edge detection device at the first side edge detection station and the second side edge detection device at the second detection station can synchronously perform side edge detection, the silicon wafer side edge detection device of the present application improves the efficiency of silicon wafer side edge detection compared to the existing silicon wafer side edge detection device.

[0011] In some embodiments, the silicon wafer conveying line includes two sets of conveyor belts arranged in parallel, and the two sets of conveyor belts are used to convey the first silicon wafer and the second silicon wafer respectively.

[0012] By configuring the silicon wafer conveyor line to be two sets of parallel conveyor belts, the silicon wafer conveyor line can realize synchronous conveyance of the first silicon wafer and the second silicon wafer. In addition, the sides of the first silicon wafer and the second silicon wafer close to each other can extend into the gap between the two sets of conveyor belts, thereby providing sufficient detection space for the sides of the first silicon wafer and the second silicon wafer close to each other.

[0013] In some embodiments, the first side edge detection unit includes a first side edge detection light source, a second side edge detection light source, a first reflector, a second reflector, a first side edge detection camera, and a second side edge detection camera, wherein: the first side edge detection light source, the first reflector, and the first side edge detection camera are all located on the first side of the first silicon wafer at the first side edge detection station, and the first side edge detection camera is located above the silicon wafer conveyor line, wherein: the first side edge detection light source is used to irradiate the first side edge of the first silicon wafer located at the first side edge detection station, and the first reflector is used to reflect the light reflected from the first side edge of the first silicon wafer upward to the first The side edge detection camera is located in the side edge detection camera, so that the first side edge detection camera detects the first side edge of the first silicon wafer; the second side edge detection light source, the second reflector and the second side edge detection camera are all located on the second side of the first silicon wafer at the first side edge detection station, and the second side edge detection camera is located above the silicon wafer conveyor line, wherein: the second side edge detection light source is used to illuminate the second side edge of the first silicon wafer located at the first side edge detection station, and the second reflector is used to reflect the light reflected from the second side edge of the first silicon wafer upward into the second side edge detection camera, so that the second side edge detection camera detects the second side edge of the first silicon wafer.

[0014] By setting the first side edge detection unit, the first side edge detection unit can implement synchronous detection of both side edges of the first silicon wafer located at the first side edge detection station. In particular, by setting the first reflector and the second reflector, the light irradiated by the first side edge detection light source and the second side edge detection light source to the both side edges of the first silicon wafer is reflected upward to the first side edge detection camera and the second side edge detection camera respectively arranged above the silicon wafer conveyor line.

[0015] In some embodiments, the first side edge detection light source includes three first side edge point light sources, and the light spots irradiated by the three first side edge point light sources on the first side edge of the first silicon wafer overlap; the second side edge detection light source includes three second side edge point light sources, and the light spots irradiated by the three second side edge point light sources on the second side edge of the first silicon wafer overlap.

[0016] When the first silicon wafer passes through the first side edge detection station driven by the silicon wafer conveyor line, the light spots generated by the three first side edge point light sources on the first side edge of the first silicon wafer after being overlapped and strengthened scan the first side edge of the first silicon wafer, and the reflected light generated by them is reflected to the first side edge detection camera via the first reflector, thereby further improving the detection accuracy of the first side edge of the first silicon wafer by the first side edge detection camera. Simultaneously, the light spots generated by the three second side edge point light sources on the second side edge of the first silicon wafer after being overlapped and strengthened scan the second side edge of the first silicon wafer, and the reflected light generated by them is reflected to the second side edge detection camera via the second reflector, thereby further improving the detection accuracy of the second side edge of the first silicon wafer by the second side edge detection camera.

[0017] In some embodiments, the three first side edge point light sources are respectively installed on three first universal brackets located on the first side of the silicon wafer conveyor line, and the three second side edge point light sources are respectively installed on three second universal brackets located on the second side of the silicon wafer conveyor line.

[0018] The three first universal brackets are arranged on the first side of the silicon wafer conveyor line, and the three second universal brackets are arranged on the second side of the silicon wafer conveyor line, which will not occupy the space inside the silicon wafer conveyor line, making the structure of the silicon wafer conveyor line more compact.

[0019] In some embodiments, the second side edge detection unit includes a third side edge detection light source, a fourth side edge detection light source, a third reflector, a fourth reflector, a third side edge detection camera, and a fourth side edge detection camera, wherein: the third side edge detection light source, the third reflector, and the third side edge detection camera are all located on the first side of the second silicon wafer at the second side edge detection station, and the third side edge detection camera is located above the silicon wafer conveyor line, wherein the third side edge detection light source is used to irradiate the first side edge of the second silicon wafer located at the second side edge detection station, and the third reflector is used to reflect the light reflected from the first side edge of the second silicon wafer upward The light is reflected into the third side edge detection camera, so that the third side edge detection camera detects the first side edge of the second silicon wafer; the fourth side edge detection light source, the fourth reflector and the fourth side edge detection camera are all located on the second side of the silicon wafer conveyor line, and the fourth side edge detection camera is located above the silicon wafer conveyor line, wherein the fourth side edge detection light source is used to illuminate the second side edge of the second silicon wafer located at the second side edge detection station, and the fourth reflector is used to reflect the light reflected from the second side edge of the second silicon wafer upward into the fourth side edge detection camera, so that the fourth side edge detection camera detects the second side edge of the second silicon wafer.

[0020] By setting the second side edge detection unit, the second side edge detection unit can implement synchronous detection of the two side edges of the second silicon wafer located at the second side edge detection station. In particular, by setting the third reflector and the fourth reflector, the light irradiated by the third side edge detection light source and the fourth side edge detection light source to the two side edges of the second silicon wafer is reflected upward to the third side edge detection camera and the fourth side edge detection camera respectively arranged above the silicon wafer conveyor line.

[0021] In some embodiments, the third side edge detection light source includes three third side edge point light sources, and the light spots irradiated by the three third side edge point light sources on the first side edge of the second silicon wafer overlap; the fourth side edge detection light source includes three fourth side edge point light sources, and the light spots irradiated by the three fourth side edge point light sources on the second side edge of the second silicon wafer overlap.

[0022] When the second silicon wafer passes through the second side edge detection station driven by the silicon wafer conveyor line, the light spots generated by the three third side edge point light sources on the first side edge of the second silicon wafer after being overlapped and strengthened scan the first side edge of the second silicon wafer, and the reflected light generated by them is reflected to the third side edge detection camera via the third reflector, thereby further improving the detection accuracy of the third side edge detection camera for the first side edge of the second silicon wafer. Simultaneously, the light spots generated by the three fourth side edge point light sources on the second side edge of the second silicon wafer after being overlapped and strengthened scan the second side edge of the second silicon wafer, and the reflected light generated by them is reflected to the fourth side edge detection camera via the fourth reflector, thereby further improving the detection accuracy of the fourth side edge detection camera for the second side edge of the second silicon wafer.

[0023] In some embodiments, the three third side edge point light sources are respectively installed on three third universal brackets located on the first side of the silicon wafer conveyor line, and the three fourth side edge point light sources are respectively installed on three fourth universal brackets located on the second side of the silicon wafer conveyor line.

[0024] The three third universal brackets are arranged on the first side of the silicon wafer conveyor line, and the three fourth universal brackets are arranged on the second side of the silicon wafer conveyor line, which will not occupy the space inside the silicon wafer conveyor line, making the structure of the silicon wafer conveyor line more compact.

[0025] In some embodiments, a front end edge detection station and a rear end edge detection station are further provided on the conveying path of the silicon wafer conveyor line, and the silicon wafer side edge detection device also includes a front end edge detection unit and a rear end edge detection unit, wherein: the front end edge detection unit is provided at the front end edge detection station, and is configured to detect the front end edge, the first front end chamfer and the second front end chamfer of the first silicon wafer and the second silicon wafer located at the front end edge detection station, wherein the first front end chamfer is the chamfer of the front end of the silicon wafer facing the first side of the silicon wafer conveyor line, and the second front end chamfer is the chamfer located at the front end of the silicon wafer facing the second side of the silicon wafer conveyor line; the rear end edge detection unit is provided at the rear end edge detection station, and is configured to detect the rear end edge, the first rear end chamfer and the second rear end chamfer of the first silicon wafer and the second silicon wafer located at the rear end edge detection station, wherein the first rear end chamfer is the chamfer of the rear end of the silicon wafer facing the first side of the silicon wafer conveyor line, and the second rear end chamfer is the chamfer located at the rear end of the silicon wafer facing the second side of the silicon wafer conveyor line.

[0026] By setting up the front edge detection unit and the rear edge detection unit, the front edge including the front chamfer and the rear edge including the rear chamfer of the first silicon wafer and the second silicon wafer can be detected.

[0027] In some embodiments, the front end edge detection unit includes a front end edge detection light source, a first front end chamfer detection light source, a second front end chamfer detection light source, a first front end edge detection camera, a second front end edge detection camera and a front end reflector, wherein: the first front end chamfer detection light source is located on the first side of the silicon wafer conveyor line, the second front end chamfer detection light source is located on the second side of the silicon wafer conveyor line, the front end edge detection light source is located above the silicon wafer conveyor line, the first front end edge detection camera and the second front end edge detection camera are located above the silicon wafer conveyor, and the first front end edge detection camera is close to the first side of the silicon wafer conveyor line, and the second front end edge detection camera is close to the second side of the silicon wafer conveyor line; the first front end chamfer detection light source is configured to illuminate the first silicon wafer and the second silicon wafer located at the front end edge detection station. The first front end chamfer of the two silicon wafers, the second front end chamfer detection light source is configured to illuminate the second front end chamfer of the first silicon wafer and the second silicon wafer located at the front end edge detection station, and the front end edge detection light source is configured to illuminate the front end edges of the first silicon wafer and the second silicon wafer located at the front end edge detection station; the first silicon wafer reflects the received light to the first front end edge detection camera through the front end reflector, so as to use the first front end edge detection camera to detect the first front end chamfer, the second front end chamfer and the front end edge of the first silicon wafer; the second silicon wafer reflects the received light to the second front end edge detection camera through the front end reflector, so as to use the second front end edge detection camera to detect the first front end chamfer, the second front end chamfer and the front end edge of the second silicon wafer.

[0028] By setting a front end edge detection light source, a first front end chamfer detection light source, a second front end chamfer detection light source, a first front end edge detection camera, a second front end edge detection camera and a front end reflector, and laying out the positions of each component, the first front end edge detection camera can receive the first front end chamfer, the second front end chamfer and the light reflected by the front end edge of the first silicon wafer, thereby completing the detection of the front end edge and the two front end chamfers of the first silicon wafer, and the second front end edge detection camera can receive the first front end chamfer, the second front end chamfer and the light reflected by the front end edge of the second silicon wafer, thereby completing the detection of the front end edge and the two front end chamfers of the second silicon wafer.

[0029] In some embodiments, the first front chamfer detection light source includes a first front point light source and a second front point light source, wherein the first front point light source is used to illuminate the first front chamfer of the first silicon wafer, and the second front point light source is used to illuminate the first front chamfer of the second silicon wafer; the second front chamfer detection light source includes a third front point light source and a fourth front point light source, wherein the third front point light source is used to illuminate the second front chamfer of the first silicon wafer, and the fourth front point light source is used to illuminate the second front chamfer of the second silicon wafer.

[0030] By setting the first front chamfer detection light source to include a first front point light source and a second front point light source with different emission angles, the first front chamfer detection light source can accurately illuminate the first front chamfer of the first silicon wafer and the first front chamfer of the second silicon wafer, and finally improve the detection accuracy of the first front edge detection camera and the second front edge detection camera on the first front chamfer of the first silicon wafer and the first front chamfer of the second silicon wafer. Similarly, by setting the second front chamfer detection light source to include a third front point light source and a fourth front point light source with different emission angles, the second front chamfer detection light source can accurately illuminate the second front chamfer of the first silicon wafer and the second front chamfer of the second silicon wafer, and finally improve the detection accuracy of the first front edge detection camera and the second front edge detection camera on the second front chamfer of the first silicon wafer and the second front chamfer of the second silicon wafer.

[0031] In some embodiments, the rear-end edge detection unit includes a rear-end edge detection light source, a first rear-end chamfer detection light source, a second rear-end chamfer detection light source, a first rear-end edge detection camera, a second rear-end edge detection camera and a rear-end reflector, wherein: the first rear-end chamfer detection light source is located on the first side of the silicon wafer conveyor line, the second rear-end chamfer detection light source is located on the second side of the silicon wafer conveyor line, the rear-end edge detection light source is located above the silicon wafer conveyor line, the first rear-end edge detection camera and the second rear-end edge detection camera are located above the silicon wafer conveyor line, and the first rear-end edge detection camera is close to the first side of the silicon wafer conveyor line, and the second rear-end edge detection camera is close to the second side of the silicon wafer conveyor line; the first rear-end chamfer detection light source is configured to illuminate the first silicon wafer and the second silicon wafer located at the rear-end edge detection station. The first rear end chamfer of the two silicon wafers, the second rear end chamfer detection light source is configured to illuminate the second rear end chamfer of the first silicon wafer and the second silicon wafer located at the rear end edge detection station, and the rear end edge detection light source is configured to illuminate the rear end edges of the first silicon wafer and the second silicon wafer located at the rear end edge detection station; the first silicon wafer reflects the received light through the rear end reflector to the first rear end edge detection camera, so as to use the first rear end edge detection camera to detect the first rear end chamfer, the second rear end chamfer and the rear end edge of the first silicon wafer; the second silicon wafer reflects the received light through the rear end reflector to the second rear end edge detection camera, so as to use the second rear end edge detection camera to detect the first rear end chamfer, the second rear end chamfer and the rear end edge of the second silicon wafer.

[0032] By setting a rear edge detection light source, a first rear chamfer detection light source, a second rear chamfer detection light source, a first rear edge detection camera, a second rear edge detection camera and a rear reflector, and laying out the positions of each component, the first rear edge detection camera can receive the first rear chamfer, the second rear chamfer and the light reflected by the rear edge of the first silicon wafer, thereby completing the detection of the rear edge and the two rear chamfers of the first silicon wafer, and the second rear edge detection camera can receive the first rear chamfer, the second rear chamfer and the light reflected by the rear edge of the second silicon wafer, thereby completing the detection of the rear edge and the two rear chamfers of the second silicon wafer.

[0033] In some embodiments, the first back-end chamfer detection light source includes a first back-end point light source and a second back-end point light source, the first back-end point light source is configured to illuminate the first back-end chamfer of the first silicon wafer, and the second back-end point light source is configured to illuminate the first back-end chamfer of the second silicon wafer; the second back-end chamfer detection light source includes a third back-end point light source and a fourth back-end point light source, the third back-end point light source is configured to illuminate the second back-end chamfer of the first silicon wafer, and the fourth back-end point light source is configured to illuminate the second back-end chamfer of the second silicon wafer.

[0034] By setting the first rear chamfer detection light source to include a first rear end point light source and a second rear end point light source with different emission angles, the first rear chamfer detection light source can accurately illuminate the first rear chamfer of the first silicon wafer and the first rear chamfer of the second silicon wafer, and finally improve the detection accuracy of the first rear edge detection camera and the second rear edge detection camera on the first rear chamfer of the first silicon wafer and the first rear chamfer of the second silicon wafer. Similarly, by setting the second rear chamfer detection light source to include a third rear end point light source and a fourth rear end point light source with different emission angles, the second rear chamfer detection light source can accurately illuminate the second rear chamfer of the first silicon wafer and the second rear chamfer of the second silicon wafer, and finally improve the detection accuracy of the first rear edge detection camera and the second rear edge detection camera on the second rear chamfer of the first silicon wafer and the second rear chamfer of the second silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 It is a schematic structural diagram of a silicon wafer side edge detection device in an embodiment of the present application at one viewing angle;

[0036] Figure 2 is a schematic structural diagram of a silicon wafer side edge detection device in an embodiment of the present application from another viewing angle;

[0037] Figure 3 Schematic diagram of the detection optical path of the silicon wafer side edge detection device in the embodiment of the present application;

[0038] Figure 4Schematic diagram of the detection light path of the first side edge detection unit in the embodiment of the present application;

[0039] Figure 5 Schematic diagram of the detection light path of the second side edge detection unit in the embodiment of the present application;

[0040] Figure 6 A schematic diagram of a detection optical path of a silicon wafer side edge detection device in another embodiment of the present application;

[0041] Figure 7 It is a schematic structural diagram of a front-end edge detection unit and a rear-end edge detection unit in another embodiment of the present application.

[0042] Figures 1 to 7 Included:

[0043] Wafer conveyor line 1, first group conveyor belt 11, second group conveyor belt 12, front edge detection unit 51, first side edge detection unit 52, second side edge detection unit 53, rear edge detection unit 54, front edge detection light source 511, first front chamfer detection light source 512, second front chamfer detection light source 513, first front edge detection camera 514, second front edge detection camera 515, front reflector 516, first side edge detection light source 521, second side edge detection light source 522, first reflector 523, second reflector 524, first side edge detection camera 525, second side edge detection camera 526, third side edge detection light source 531, third side edge detection light source 532, fourth side edge detection light source 533, fifth side edge detection light source 534, fifth side edge detection light source 535, fifth side edge detection light source 536, fifth side edge detection light source 537, fifth side edge detection light source 538, fifth side edge detection light source 539, fifth side edge detection light source 540, fifth side edge detection light source 541, fifth side edge detection light source 542, fifth side edge detection light source 543, fifth side edge detection light source 544, fifth side edge detection light source 545, fifth side edge detection light source 546, fifth side edge detection light source 547, fifth side edge detection light source 548, fifth side edge detection light source 549, fifth side edge detection light source 550, fifth side edge detection light source 551, fifth side edge detection light source 552 Four side edge detection light sources 532, a third reflector 533, a fourth reflector 534, a third side edge detection camera 535, a fourth side edge detection camera 536, a rear end edge detection light source 541, a first rear end chamfer detection light source 542, a second rear end chamfer detection light source 543, a first rear end edge detection camera 544, a second rear end edge detection camera 545, a rear end reflector 546, a first front end point light source 5121, a second front end point light source 5122, a third front end point light source 5131, a fourth front end point light source 5132, a first rear end point light source 5421, a second rear end point light source 5422, a third rear end point light source 5431, and a fourth rear end point light source 5432. DETAILED DESCRIPTION

[0044] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the present application is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0045] like Figures 1 to 3 As shown, the silicon wafer side edge detection device in the embodiment of the present application includes a silicon wafer conveying line 1, a first side edge detection unit 51 and a second side edge detection unit 52, wherein:

[0046] The silicon wafer conveyor line 1 is configured to synchronously convey a first silicon wafer 100 and a second silicon wafer 200 along a first direction (such as the X-axis direction in the figure), wherein the first silicon wafer 100 and the second silicon wafer 200 are placed side by side along a second direction (such as the Y-axis direction in the figure), and the second direction is perpendicular to the first direction.

[0047] A first side edge detection station and a second side edge detection station are sequentially arranged on the conveying path of the silicon wafer conveying line 1 .

[0048] The first side edge detection unit 52 is disposed at the first side edge detection station, and is configured to detect both side edges of the first silicon wafer 100 located at the first side edge detection station.

[0049] The second side edge detection unit 53 is disposed at the second side edge detection station, and is configured to detect the two side edges of the second silicon wafer 200 located at the second side edge detection station.

[0050] The silicon wafer side inspection device provided in the embodiment of the present application, the silicon wafer conveyor line 1 can implement synchronous conveyance of two silicon wafers, and a first side inspection station and a second side inspection station are provided on the conveying path of the silicon wafer conveyor line 1. The two synchronously conveyed silicon wafers are successively subjected to side inspection at the first side inspection station and the second side inspection station.

[0051] Since the first side edge detection device 52 at the first side edge detection station and the second side edge detection device 53 at the second detection station can perform the side edge detection simultaneously, that is, when the second side edge detection device 53 performs the detection of the two side edges of the second silicon wafer 200 in the previous group of silicon wafers, the first side edge detection device 52 performs the detection of the two side edges of the first silicon wafer 100 in the next group of silicon wafers. Therefore, compared with the existing silicon wafer side edge detection device, the silicon wafer side edge detection device of the present application improves the efficiency of silicon wafer side edge detection.

[0052] Optionally, the silicon wafer conveyor line 1 includes two groups of conveyor belts arranged in parallel, wherein the first group of conveyor belts 11 is used to convey the first silicon wafer 100 , and the second group of conveyor belts 12 is used to convey the second silicon wafer 200 .

[0053] By configuring the silicon wafer conveyor line 1 to be two sets of parallel conveyor belts, the silicon wafer conveyor line 1 can realize synchronous conveyance of the first silicon wafer 100 and the second silicon wafer 200. In addition, the sides of the first silicon wafer 100 and the second silicon wafer 200 that are close to each other can extend into the gap between the two sets of conveyor belts, thereby providing sufficient detection space for the sides of the first silicon wafer 100 and the second silicon wafer 200 that are close to each other.

[0054] Optionally, the first side edge detection unit 52 includes a first side edge detection light source 521, a second side edge detection light source 522, a first reflector 523, a second reflector 524, a first side edge detection camera 525, and a second side edge detection camera 526, wherein:

[0055] The first side edge detection light source 521, the first reflector 523 and the first side edge detection camera 525 are all located on the first side of the first silicon wafer 100 at the first side edge detection station, and the first side edge detection camera 525 is located above the silicon wafer conveyor line 1, wherein: the first side edge detection light source 521 is used to illuminate the first side edge of the first silicon wafer 100 located at the first side edge detection station, and the first reflector 523 is used to reflect the light reflected from the first side edge of the first silicon wafer 100 upward into the first side edge detection camera 525, so that the first side edge detection camera 525 can detect the first side edge of the first silicon wafer 100.

[0056] The second side edge detection light source 522, the second reflector 524 and the second side edge detection camera 526 are all located on the second side of the first silicon wafer 100 at the first side edge detection station, and the second side edge detection camera 526 is located above the silicon wafer conveyor line 1, wherein: the second side edge detection light source 522 is used to illuminate the second side edge of the first silicon wafer 100 located at the first side edge detection station, and the second reflector 524 is used to reflect the light reflected from the second side edge of the first silicon wafer 100 upward into the second side edge detection camera 526, so that the second side edge detection camera 526 can detect the second side edge of the first silicon wafer 100.

[0057] It can be seen that by setting the first side edge detection unit 52, the first side edge detection unit 52 can implement synchronous detection of the two side edges of the first silicon wafer 100 located at the first side edge detection station, thereby improving the detection efficiency. In particular, by setting the first reflector 523 and the second reflector 524, the light irradiated to the two side edges of the first silicon wafer 100 by the first side edge detection light source 521 and the second side edge detection light source 522 is reflected upward to the first side edge detection camera 525 and the second side edge detection camera 526 respectively arranged above the silicon wafer conveyor line 1. The first side edge detection camera 525 and the second side edge detection camera 526 are both located above the silicon wafer conveyor line 1, and do not occupy the space between the first group of conveyor belts 11 and the second group of conveyor belts 12, so that the structure of the entire silicon wafer conveyor line 1 is compact and space-saving.

[0058] like Figure 3As shown, optionally, the first side edge detection light source 521 includes three first side edge point light sources, and the light spots irradiated by the three first side edge point light sources on the first side edge of the first silicon wafer 100 overlap. The second side edge detection light source 522 includes three second side edge point light sources, and the light spots irradiated by the three second side edge point light sources on the second side edge of the first silicon wafer 100 overlap. For a schematic diagram of the light paths of the three first side edge point light sources and the three second side edge point light sources, see Figure 6 .

[0059] When the first silicon wafer 100 passes through the first side edge detection station driven by the silicon wafer conveyor line 1, the light spots generated by the three first side edge point light sources on the first side edge of the first silicon wafer 100 and reinforced by superposition sweep across the first side edge of the first silicon wafer 100, and the reflected light generated by them is reflected to the first side edge detection camera 525 by the first reflector 523, thereby further improving the detection accuracy of the first side edge of the first silicon wafer 100 by the first side edge detection camera 525. Simultaneously, the light spots generated by the three second side edge point light sources on the second side edge of the first silicon wafer 100 and reinforced by superposition sweep across the second side edge of the first silicon wafer 100, and the reflected light generated by them is reflected to the second side edge detection camera 526 by the second reflector 524, thereby further improving the detection accuracy of the second side edge of the first silicon wafer 100 by the second side edge detection camera 526.

[0060] The three first side edge point light sources are respectively installed on three first universal brackets located on the first side of the silicon wafer conveyor line 1, and the three second side edge point light sources are respectively installed on three second universal brackets located on the second side of the silicon wafer conveyor line 1.

[0061] Three first universal brackets are arranged on the first side of the silicon wafer conveyor line 1, and three second universal brackets are arranged on the second side of the silicon wafer conveyor line 1, which will not occupy the space inside the silicon wafer conveyor line 1, so that the structure of the silicon wafer conveyor line 1 is relatively compact. The first universal bracket and the second universal bracket can adopt existing universal brackets, and the specific structure is not described in detail. The angle of the point light source on it can be freely adjusted through the universal bracket, so as to adjust the irradiation direction of the point light source.

[0062] Similarly, the second side edge detection unit 53 includes a third side edge detection light source 531, a fourth side edge detection light source 532, a third reflector 533, a fourth reflector 534, a third side edge detection camera 535, and a fourth side edge detection camera 536, wherein: the third side edge detection light source 531, the third reflector 533 and the third side edge detection camera 535 are all located on the first side of the second silicon wafer at the second side edge detection station, and the third side edge detection camera 535 is located above the silicon wafer conveyor line 1, wherein the third side edge detection light source 535 is used to irradiate the first side edge of the second silicon wafer 200 located at the second side edge detection station, and the third reflector 533 is used to reflect the light reflected from the first side edge of the second silicon wafer 200 upward into the third side edge detection camera 535, so that the third side edge detection camera 535 detects the first side edge of the second silicon wafer 200.

[0063] The fourth side edge detection light source 532, the fourth reflector 534 and the fourth side edge detection camera 536 are all located on the second side of the second silicon wafer at the second side edge detection station, and the fourth side edge detection camera 536 is located above the silicon wafer conveyor line 1, wherein the fourth side edge detection light source 532 is used to illuminate the second side edge of the second silicon wafer 200 located at the second side edge detection station, and the fourth reflector 534 is used to reflect the light reflected from the second side edge of the second silicon wafer 200 upward into the fourth side edge detection camera 536, so that the fourth side edge detection camera 536 detects the second side edge of the second silicon wafer 200.

[0064] By setting the second side edge detection unit 53, the second side edge detection unit 53 can implement synchronous detection of the two side edges of the second silicon wafer 200 located at the second side edge detection station. In particular, by setting the third reflector 533 and the fourth reflector 534, the light irradiated by the third side edge detection light source 531 and the fourth side edge detection light source 532 to the two side edges of the second silicon wafer 200 is reflected upward to the third side edge detection camera 535 and the fourth side edge detection camera 536 respectively arranged above the silicon wafer conveyor line 1. Similarly, the third side edge detection camera 535 and the fourth side edge detection camera 536 are also located above the silicon wafer conveyor line 1, and do not occupy the space between the first group of conveyor belts 11 and the second group of conveyor belts 12, so that the structure of the entire silicon wafer conveyor line 1 is compact and space-saving.

[0065] like Figure 3 As shown, optionally, the third side edge detection light source 531 includes three third side edge point light sources, and the light spots irradiated by the three third side edge point light sources to the first side edge of the second silicon wafer 200 overlap. The fourth side edge detection light source 532 includes three fourth side edge point light sources, and the light spots irradiated by the three fourth side edge point light sources to the second side edge of the second silicon wafer 200 overlap.

[0066] When the second silicon wafer 200 passes through the second side edge detection station driven by the silicon wafer conveyor line 1, the light spots generated by the three third side edge point light sources on the first side edge of the second silicon wafer 200 and reinforced by overlap sweep across the first side edge of the second silicon wafer 200, and the reflected light generated by them is reflected to the third side edge detection camera 535 by the third reflector 533, thereby further improving the detection accuracy of the third side edge detection camera 535 on the first side edge of the second silicon wafer 200. Simultaneously, the light spots generated by the three fourth side edge point light sources on the second side edge of the second silicon wafer 200 and reinforced by overlap sweep across the second side edge of the second silicon wafer 200, and the reflected light generated by them is reflected to the fourth side edge detection camera 536 by the fourth reflector 534, thereby further improving the detection accuracy of the fourth side edge detection camera 536 on the second side edge of the second silicon wafer 200.

[0067] In some embodiments, the three third side edge point light sources are respectively installed on three third universal brackets located on the first side of the silicon wafer conveyor line 1, and the three fourth side edge point light sources are respectively installed on three fourth universal brackets located on the second side of the silicon wafer conveyor line 1.

[0068] The three third universal brackets are arranged on the first side of the silicon wafer conveyor line 1, and the three fourth universal brackets are arranged on the second side of the silicon wafer conveyor line 1, which will not occupy the space inside the silicon wafer conveyor line 1, making the structure of the silicon wafer conveyor line 1 more compact. The third universal bracket and the fourth universal bracket can also use existing universal brackets, and the specific structure is not described in detail. The angle of the point light source on it can be freely adjusted through the universal bracket to adjust the irradiation direction of the point light source. Figure 6 As shown, optionally, a front edge detection station and a rear edge detection station are further provided on the conveying path of the silicon wafer conveyor line 1 , and the silicon wafer side edge detection device also includes a front edge detection unit 51 and a rear edge detection unit 52 .

[0069] The front edge detection unit 51 is disposed at the front edge detection station and is configured to detect the front edge, the first front chamfer, and the second front chamfer of the first silicon wafer 100 and the second silicon wafer 200 located at the front edge detection station, wherein the first front chamfer is the front edge of the silicon wafer facing the first side of the silicon wafer conveyor line 1 (for example, Figure 6 The second front chamfer is located at the front end of the silicon wafer and faces the second side of the silicon wafer conveying line (eg, Figure 6 Chamfer of side B) shown in FIG.

[0070] The rear end edge detection unit 54 is disposed at the rear end edge detection station and is configured to detect the rear end edge, the first rear end chamfer and the second rear end chamfer of the first silicon wafer 100 and the second silicon wafer 200 located at the rear end edge detection station, wherein the first rear end chamfer is the chamfer of the first side of the silicon wafer conveyor line 1 at the rear end of the silicon wafer, and the second rear end chamfer is the chamfer located at the rear end of the silicon wafer toward the second side of the silicon wafer conveyor line 1.

[0071] By setting up the front edge detection unit 51 and the rear edge detection unit 54, the silicon wafer side edge detection device in the embodiment of the present application can also implement the detection of the front edge including the front chamfer and the rear edge including the rear chamfer of the first silicon wafer and the second silicon wafer.

[0072] like Figure 6 to Figure 7 As shown, optionally, the front edge detection unit 51 includes a front edge detection light source 511, a first front chamfer detection light source 512, a second front chamfer detection light source 513, a first front edge detection camera 514, a second front edge detection camera 515 and a front reflector 516, wherein:

[0073] The first front end chamfer detection light source 512 is located on the first side of the silicon wafer conveyor line 1, the second front end chamfer detection light source 513 is located on the second side of the silicon wafer conveyor line 1, the front end edge detection light source 511 is located above the silicon wafer conveyor line 1, the first front end edge detection camera 514 and the second front end edge detection camera 515 are located above the silicon wafer conveyor line, and the first front end edge detection camera 514 is close to the first side of the silicon wafer conveyor line 1, and the second front end edge detection camera 515 is close to the second side of the silicon wafer conveyor line 1.

[0074] The first front chamfer detection light source 512 is configured to illuminate the first front chamfer of the first silicon wafer 100 and the second silicon wafer 200 located at the front edge detection station, the second front chamfer detection light source 513 is configured to illuminate the second front chamfer of the first silicon wafer 100 and the second silicon wafer 200 located at the front edge detection station, and the front edge detection light source 511 is configured to illuminate the front edge of the first silicon wafer 100 and the second silicon wafer 200 located at the front edge detection station.

[0075] The first silicon wafer 100 reflects the received light to the first front edge detection camera 514 through the front reflector 516, so as to detect the first front chamfer, the second front chamfer and the front edge of the first silicon wafer 100 by using the first front edge detection camera 514;

[0076] The second silicon wafer 200 reflects the received light to the second front edge detection camera 515 through the front reflector 516 , so that the second front edge detection camera 515 can be used to detect the first front chamfer, the second front chamfer and the front edge of the second silicon wafer 200 .

[0077] It can be seen that by setting the front end edge detection light source 511, the first front end chamfer detection light source 512, the second front end chamfer detection light source 513, the first front end edge detection camera 514, the second front end edge detection camera 515 and the front end reflector 516, and arranging the positions of the above components, the first front end edge detection camera 514 can receive the light reflected by the first front end chamfer, the second front end chamfer and the front end edge of the first silicon wafer 100, thereby completing the detection of the front end edge and the two front end chamfers of the first silicon wafer 100, and the second front end edge detection camera 515 can synchronously receive the light reflected by the first front end chamfer, the second front end chamfer and the front end edge of the second silicon wafer 200, thereby completing the detection of the front end edge and the two front end chamfers of the second silicon wafer 200.

[0078] Optionally, the first front chamfer detection light source 512 includes a first front point light source 5121 and a second front point light source 5122, wherein the first front point light source 5121 is used to illuminate the first front chamfer of the first silicon wafer 100, and the second front point light source 5122 is used to illuminate the first front chamfer of the second silicon wafer 200.

[0079] By configuring the first front end chamfer detection light source 512 to include a first front end point light source 5121 and a second front end point light source 5122 with different emission angles, the first front end chamfer detection light source can accurately irradiate the first front end chamfer of the first silicon wafer 100 and the first front end chamfer of the second silicon wafer 200, thereby ultimately improving the detection accuracy of the first front end edge detection camera 514 and the second front end edge detection camera 515 for the first front end chamfer of the first silicon wafer 100 and the first front end chamfer of the second silicon wafer 200.

[0080] The second front chamfer detection light source 513 includes a third front point light source 5131 and a fourth front point light source 5132 , wherein the third front point light source 5131 is used to illuminate the second front chamfer of the first silicon wafer 100 , and the fourth front point light source 5132 is used to illuminate the second front chamfer of the second silicon wafer 200 .

[0081] By configuring the second front end chamfer detection light source 513 to include a third front end point light source 5131 and a fourth front end point light source 5132 with different emission angles, the second front end chamfer detection light source 513 can accurately irradiate the second front end chamfer of the first silicon wafer 100 and the second front end chamfer of the second silicon wafer 200, thereby ultimately improving the detection accuracy of the first front end edge detection camera 514 and the second front end edge detection camera 515 for the second front end chamfer of the first silicon wafer 100 and the second front end chamfer of the second silicon wafer 200.

[0082] The first front point light source 5121 and the second front point light source 5122 are respectively mounted on two fifth universal brackets located on one side of the wafer conveyor line 1, so as to adjust the irradiation angles of the first front point light source 5121 and the second front point light source 5122; the third front point light source 5131 and the fourth front point light source 5132 are respectively mounted on two sixth universal brackets located on the other side of the wafer conveyor line 1, so as to adjust the irradiation angles of the third front point light source 5131 and the fourth front point light source 5132. No universal bracket is installed between the first group of conveyor belts 11 and the second group of conveyor belts 12, so as to ensure the compact structure of the entire wafer conveyor line 1.

[0083] Continue to refer Figure 6 to Figure 7 As shown, optionally, the rear end edge detection unit 54 includes a rear end edge detection light source 541, a first rear end chamfer detection light source 542, a second rear end chamfer detection light source 543, a first rear end edge detection camera 544, a second rear end edge detection camera 545 and a rear end reflector 546, wherein: the first rear end chamfer detection light source 542 is located on the first side of the silicon wafer conveyor line 1, the second rear end chamfer detection light source 543 is located on the second side of the silicon wafer conveyor line 1, the rear end edge detection light source 541 is located above the silicon wafer conveyor line 1, the first rear end edge detection camera 544 and the second rear end edge detection camera 545 are located above the silicon wafer conveyor line 1, and the first rear end edge detection camera 544 is close to the first side of the silicon wafer conveyor line 1, and the second rear end edge detection camera 545 is close to the second side of the silicon wafer conveyor line 1.

[0084] The first rear-end chamfer detection light source 542 is configured to illuminate the first rear-end chamfer of the first silicon wafer 100 and the second silicon wafer 200 located at the rear-end edge detection station, the second rear-end chamfer detection light source 543 is configured to illuminate the second rear-end chamfer of the first silicon wafer 100 and the second silicon wafer 200 located at the rear-end edge detection station, and the rear-end edge detection light source 541 is configured to illuminate the rear-end edge of the first silicon wafer 100 and the second silicon wafer 200 located at the rear-end edge detection station.

[0085] The first silicon wafer 100 reflects the received light to the first rear edge detection camera 544 through the rear reflector 546, so as to detect the first rear chamfer, the second rear chamfer and the rear edge of the first silicon wafer 100 by using the first rear edge detection camera 544;

[0086] The second silicon wafer 200 reflects the received light to the second rear edge detection camera 545 through the rear reflector 546, so as to use the second rear edge detection camera 545 to detect the first rear chamfer, the second rear chamfer and the rear edge of the second silicon wafer 200. It can be seen that by setting the rear edge detection light source 541, the first rear chamfer detection light source 542, the second rear chamfer detection light source 543, the first rear edge detection camera 544, the second rear edge detection camera 545 and the rear reflector 546, and arranging the positions of the above components, the first rear edge detection camera 544 can receive the light reflected by the first rear chamfer, the second rear chamfer and the rear edge of the first silicon wafer 100, thereby completing the detection of the rear edge and the two rear chamfers of the first silicon wafer 100, and the second rear edge detection camera 545 can receive the light reflected by the first rear chamfer, the second rear chamfer and the rear edge of the second silicon wafer 200, thereby completing the detection of the rear edge and the two rear chamfers of the second silicon wafer 200.

[0087] Optionally, the first back-end chamfer detection light source 542 includes a first back-end point light source 5421 and a second back-end point light source 5422, wherein the first back-end point light source 5421 is configured to illuminate the first back-end chamfer of the first silicon wafer 100, and the second back-end point light source 5422 is configured to illuminate the first back-end chamfer of the second silicon wafer 200.

[0088] By configuring the first rear-end chamfer detection light source 542 to include a first rear-end endpoint light source 5421 and a second rear-end endpoint light source 5422 having different emission angles, the first rear-end chamfer detection light source 542 can accurately irradiate the first rear-end chamfer of the first silicon wafer 100 and the first rear-end chamfer of the second silicon wafer 200, thereby ultimately improving the detection accuracy of the first rear-end edge detection camera 544 and the second rear-end edge detection camera 545 for the first rear-end chamfer of the first silicon wafer 100 and the first rear-end chamfer of the second silicon wafer 200.

[0089] The second back-end chamfer detection light source 543 includes a third back-end point light source 5431 and a fourth back-end point light source 5432. The third back-end point light source 5431 is configured to illuminate the second back-end chamfer of the first silicon wafer 100, and the fourth back-end point light source 5432 is configured to illuminate the second back-end chamfer of the second silicon wafer 200.

[0090] By configuring the second rear end chamfer detection light source 543 to include a third rear end point light source 5431 and a fourth rear end point light source 5432 having different emission angles, the second rear end chamfer detection light source 543 can accurately irradiate the second rear end chamfer of the first silicon wafer 100 and the second rear end chamfer of the second silicon wafer 200, thereby ultimately improving the detection accuracy of the first rear end edge detection camera 544 and the second rear end edge detection camera 545 for the second rear end chamfer of the first silicon wafer 100 and the second rear end chamfer of the second silicon wafer 200.

[0091] Similarly, the first rear end point light source 5421 and the second rear end point light source 5422 are respectively mounted on two seventh universal brackets located on one side of the silicon wafer conveyor line 1 to adjust the illumination angles of the first rear end point light source 5421 and the second rear end point light source 5422; the third rear end point light source 5431 and the fourth rear end point light source 5432 are respectively mounted on two eighth universal brackets located on the other side of the silicon wafer conveyor line 1 to adjust the illumination angles of the third rear end point light source 5431 and the fourth rear end point light source 5432.

[0092] In order to ensure the reflective effect of the front-end reflector 516 and the rear-end reflector 546, the first group of conveyor belts 11 and the second group of conveyor belts 12 in the silicon wafer conveyor line 1 are both connected by multiple conveying sections, and the front-end reflector 516 and the rear-end reflector 546 are respectively arranged in the gaps between adjacent conveying sections. The heights of the front-end reflector 516 and the rear-end reflector 546 are both lower than the conveying surface of the silicon wafer conveyor line 1, which not only ensures the reflective effect of the front-end reflector 516 and the rear-end reflector 546, but also does not affect the normal transportation of the first silicon wafer 100 and the second silicon wafer 200.

[0093] The above description of the present application is sufficiently detailed and has certain particularities. Those skilled in the art should understand that the description in the embodiments is merely exemplary, and all changes made without departing from the true spirit and scope of the present application should fall within the scope of protection of the present application. The scope of protection claimed in the present application is defined by the claims, not by the above description in the embodiments. Moreover, the embodiments mentioned in the present application are not limited to being implemented individually, and some embodiments can also be implemented in combination.

Claims

1. A silicon wafer side edge detection device, characterized in that: The silicon wafer side edge detection device comprises a silicon wafer conveying line, a first side edge detection unit and a second side edge detection unit, wherein: The silicon wafer conveying line is configured to convey a first silicon wafer and a second silicon wafer synchronously along a first direction, wherein the first silicon wafer and the second silicon wafer are placed side by side along a second direction, and the second direction is perpendicular to the first direction; A first side edge detection station and a second side edge detection station are sequentially arranged on the conveying path of the silicon wafer conveying line; The first side edge detection unit is disposed at the first side edge detection station and is configured to detect both side edges of the first silicon wafer located at the first side edge detection station; The second side edge detection unit is disposed at the second side edge detection station, and is configured to detect both side edges of the second silicon wafer located at the second side edge detection station.

2. The silicon wafer side edge detection device according to claim 1, characterized in that: The silicon wafer conveying line includes two sets of conveying belts arranged in parallel, and the two sets of conveying belts are used to convey the first silicon wafer and the second silicon wafer respectively.

3. The silicon wafer side edge detection device according to claim 1, characterized in that: The first side edge detection unit includes a first side edge detection light source, a second side edge detection light source, a first reflector, a second reflector, a first side edge detection camera, and a second side edge detection camera, wherein: The first side edge detection light source, the first reflector, and the first side edge detection camera are all located on the first side of the first silicon wafer at the first side edge detection station, and the first side edge detection camera is located above the silicon wafer conveyor line, wherein: the first side edge detection light source is used to illuminate the first side edge of the first silicon wafer located at the first side edge detection station, and the first reflector is used to reflect the light reflected from the first side edge of the first silicon wafer upwards into the first side edge detection camera, so that the first side edge detection camera detects the first side edge of the first silicon wafer; The second side edge detection light source, the second reflector and the second side edge detection camera are all located on the second side of the first silicon wafer at the first side edge detection station, and the second side edge detection camera is located above the silicon wafer conveyor line, wherein: the second side edge detection light source is used to illuminate the second side edge of the first silicon wafer located at the first side edge detection station, and the second reflector is used to reflect light reflected from the second side edge of the first silicon wafer upward into the second side edge detection camera, so that the second side edge detection camera can detect the second side edge of the first silicon wafer.

4. The silicon wafer side edge detection device according to claim 3, characterized in that: The first side edge detection light source includes three first side edge point light sources, and the light spots irradiated by the three first side edge point light sources onto the first side edge of the first silicon wafer overlap; The second side edge detection light source includes three second side edge point light sources, and light spots irradiated by the three second side edge point light sources onto the second side edge of the first silicon wafer overlap.

5. The silicon wafer side edge detection device according to claim 4, characterized in that: The three first side edge point light sources are respectively installed on three first universal brackets located on the first side of the silicon wafer conveyor line, and the three second side edge point light sources are respectively installed on three second universal brackets located on the second side of the silicon wafer conveyor line.

6. The silicon wafer side edge detection device according to claim 1, characterized in that: The second side edge detection unit includes a third side edge detection light source, a fourth side edge detection light source, a third reflector, a fourth reflector, a third side edge detection camera, and a fourth side edge detection camera, wherein: The third side edge detection light source, the third reflector and the third side edge detection camera are all located at the first side of the second silicon wafer at the second side edge detection station, and the third side edge detection camera is located above the silicon wafer conveyor line, wherein the third side edge detection light source is used to illuminate the first side edge of the second silicon wafer located at the second side edge detection station, and the third reflector is used to reflect the light reflected from the first side edge of the second silicon wafer upwards into the third side edge detection camera, so that the third side edge detection camera detects the first side edge of the second silicon wafer; The fourth side edge detection light source, the fourth reflector and the fourth side edge detection camera are all located on the second side of the second silicon wafer at the second side edge detection station, and the fourth side edge detection camera is located above the silicon wafer conveyor line, wherein the fourth side edge detection light source is used to illuminate the second side edge of the second silicon wafer located at the second side edge detection station, and the fourth reflector is used to reflect the light reflected from the second side edge of the second silicon wafer upward into the fourth side edge detection camera, so that the fourth side edge detection camera detects the second side edge of the second silicon wafer.

7. The silicon wafer side edge detection device according to claim 6, characterized in that: The third side edge detection light source includes three third side edge point light sources, and the light spots irradiated by the three third side edge point light sources onto the first side edge of the second silicon wafer overlap; The fourth side edge detection light source includes three fourth side edge point light sources, and the light spots irradiated by the three fourth side edge point light sources onto the second side edge of the second silicon wafer overlap.

8. The silicon wafer side edge detection device according to claim 7, characterized in that: The three third side edge point light sources are respectively installed on the three third universal brackets located on the first side of the silicon wafer conveyor line, and the three fourth side edge point light sources are respectively installed on the three fourth universal brackets located on the second side of the silicon wafer conveyor line.

9. The silicon wafer side edge detection device according to any one of claims 1 to 8, characterized in that: The conveying path of the silicon wafer conveyor line is also provided with a front edge detection station and a rear edge detection station, and the silicon wafer side edge detection device also includes a front edge detection unit and a rear edge detection unit, wherein: The front end edge detection unit is disposed at the front end edge detection station, and is configured to detect the front end edge, the first front end chamfer, and the second front end chamfer of the first silicon wafer and the second silicon wafer located at the front end edge detection station, wherein the first front end chamfer is a chamfer at the front end of the silicon wafer facing the first side of the silicon wafer conveying line, and the second front end chamfer is a chamfer at the front end of the silicon wafer facing the second side of the silicon wafer conveying line; The rear end edge detection unit is disposed at the rear end edge detection station, and is configured to detect the rear end edge, the first rear end chamfer and the second rear end chamfer of the first silicon wafer and the second silicon wafer located at the rear end edge detection station, wherein the first rear end chamfer is the chamfer of the rear end of the silicon wafer facing the first side of the silicon wafer conveying line, and the second rear end chamfer is the chamfer located at the rear end of the silicon wafer facing the second side of the silicon wafer conveying line.

10. The silicon wafer side edge detection device according to claim 9, characterized in that: The front edge detection unit includes a front edge detection light source, a first front chamfer detection light source, a second front chamfer detection light source, a first front edge detection camera, a second front edge detection camera and a front reflector, wherein: The first front chamfer detection light source is located at a first side of the silicon wafer conveyor line, the second front chamfer detection light source is located at a second side of the silicon wafer conveyor line, the front edge detection light source is located above the silicon wafer conveyor line, the first front edge detection camera and the second front edge detection camera are located above the silicon wafer conveyor line, and the first front edge detection camera is close to the first side of the silicon wafer conveyor line, and the second front edge detection camera is close to the second side of the silicon wafer conveyor line; The first front chamfer detection light source is configured to illuminate the first front chamfers of the first silicon wafer and the second silicon wafer located at the front edge detection station, the second front chamfer detection light source is configured to illuminate the second front chamfers of the first silicon wafer and the second silicon wafer located at the front edge detection station, and the front edge detection light source is configured to illuminate the front edges of the first silicon wafer and the second silicon wafer located at the front edge detection station; The first silicon wafer reflects the received light to the first front edge detection camera through the front reflector, so as to detect the first front chamfer, the second front chamfer and the front edge of the first silicon wafer by using the first front edge detection camera; The second silicon wafer reflects the received light to the second front end edge detection camera through the front end reflector, so as to utilize the second front end edge detection camera to detect the first front end chamfer, the second front end chamfer and the front end edge of the second silicon wafer.

11. The silicon wafer side edge detection device according to claim 10, characterized in that: The first front chamfer detection light source includes a first front point light source and a second front point light source, wherein the first front point light source is used to illuminate the first front chamfer of the first silicon wafer, and the second front point light source is used to illuminate the first front chamfer of the second silicon wafer; The second front chamfer detection light source includes a third front point light source and a fourth front point light source, wherein the third front point light source is used to illuminate the second front chamfer of the first silicon wafer, and the fourth front point light source is used to illuminate the second front chamfer of the second silicon wafer.

12. The silicon wafer side edge detection device according to claim 9, characterized in that: The rear edge detection unit includes a rear edge detection light source, a first rear chamfer detection light source, a second rear chamfer detection light source, a first rear edge detection camera, a second rear edge detection camera and a rear reflector, wherein: The first rear-end chamfer detection light source is located at a first side of the silicon wafer conveying line, the second rear-end chamfer detection light source is located at a second side of the silicon wafer conveying line, the rear-end edge detection light source is located above the silicon wafer conveying line, the first rear-end edge detection camera and the second rear-end edge detection camera are located above the silicon wafer conveying line, and the first rear-end edge detection camera is close to the first side of the silicon wafer conveying line, and the second rear-end edge detection camera is close to the second side of the silicon wafer conveying line; The first rear chamfer detection light source is configured to illuminate the first rear chamfers of the first silicon wafer and the second silicon wafer located at the rear edge detection station, the second rear chamfer detection light source is configured to illuminate the second rear chamfers of the first silicon wafer and the second silicon wafer located at the rear edge detection station, and the rear edge detection light source is configured to illuminate the rear edges of the first silicon wafer and the second silicon wafer located at the rear edge detection station; The first silicon wafer reflects the received light to the first rear edge detection camera through the rear reflector, so as to detect the first rear chamfer, the second rear chamfer and the rear edge of the first silicon wafer using the first rear edge detection camera; The second silicon wafer reflects the received light to the second rear end edge detection camera through the rear end reflector, so as to utilize the second rear end edge detection camera to detect the first rear end chamfer, the second rear end chamfer and the rear end edge of the second silicon wafer.

13. The silicon wafer side edge detection device according to claim 12, characterized in that: The first rear chamfer detection light source includes a first rear end point light source and a second rear end point light source, the first rear end point light source is configured to illuminate the first rear chamfer of the first silicon wafer, and the second rear end point light source is configured to illuminate the first rear chamfer of the second silicon wafer; The second back-end chamfer detection light source includes a third back-end point light source and a fourth back-end point light source, the third back-end point light source is configured to illuminate the second back-end chamfer of the first silicon wafer, and the fourth back-end point light source is configured to illuminate the second back-end chamfer of the second silicon wafer.