Measuring device for single crystal furnace and single crystal furnace thereof

Abstract

The utility model discloses a measuring device for a single crystal furnace and the single crystal furnace. The measuring device for the single crystal furnace comprises a fixing piece and a distance measuring silicon column, specifically, a through hole is formed in the fixing piece, and the fixing piece is suitable for being installed at the bottom of a guide cylinder of the single crystal furnace. One end of the distance measuring silicon column extends into the through hole, and the other end of the distance measuring silicon column extends in the direction away from the fixing piece. Wherein a first internal thread is formed on the inner circumferential wall of the through hole, a first external thread is formed on the outer circumferential wall of the distance measuring silicon column, and the first external thread is matched with the first internal thread. According to the measuring device for the single crystal furnace, the distance measuring silicon column can directly measure the liquid opening distance, and the distance of the distance measuring silicon column extending out of the bottom of the guide cylinder can be adjusted, so that the measuring requirements of different liquid opening distances can be flexibly met, and the processing error of the length of the distance measuring silicon column can be corrected in a production field; and the accuracy of liquid opening distance measurement is further improved, so that the generation quality of the seed crystal and the success rate of crystal pulling are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of single crystal furnaces, in particular to a measuring device for a single crystal furnace and the single crystal furnace. Background Art

[0002] In the production process of the single crystal furnace, the liquid mouth distance is the distance between the bottom of the guide tube in the single crystal furnace and the molten silicon liquid level in the crucible of the single crystal furnace. As the single crystal silicon grows, the liquid mouth distance will continue to change, which will directly affect the carbon and oxygen content in the pulled single crystal. Therefore, whether the detection of the liquid mouth distance is accurate will directly affect the production quality of single crystal silicon.

[0003] In the related art, triangular displacement measurement is often used to determine the liquid-mouth distance. Among them, triangular displacement measurement and determination of the liquid-mouth distance is to use a laser to form two rectangular spots on the lower edge of the guide tube and the molten silicon liquid surface, measure the pixel distance between the two rectangular spots, and then calculate the liquid-mouth distance based on the pixel distance between the two rectangular spots and the corresponding relationship between the pixel distance and the liquid-mouth distance. However, the above-mentioned liquid-mouth distance result is not directly obtained, which makes the measurement result of the liquid-mouth distance less accurate, reducing the quality of seed crystal generation and the success rate of crystal pulling. Utility Model Content

[0004] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, one purpose of the utility model is to provide a measuring device for a single crystal furnace, which improves the accuracy of liquid mouth distance measurement, thereby improving the quality of seed crystal generation and the success rate of crystal pulling.

[0005] Another object of the utility model is to provide a single crystal furnace using the above-mentioned measuring device for a single crystal furnace.

[0006] According to the embodiment of the first aspect of the utility model, a measuring device for a single crystal furnace includes: a fixing member, a through hole is formed on the fixing member, and the fixing member is suitable for being installed at the bottom of the guide tube of the single crystal furnace; a ranging silicon column, one end of the ranging silicon column extends into the through hole, and the other end of the ranging silicon column extends in a direction away from the fixing member; wherein a first internal thread is formed on the inner peripheral wall of the through hole, and a first external thread is formed on the outer peripheral wall of the ranging silicon column, and the first external thread and the first internal thread cooperate.

[0007] According to the measuring device for a single crystal furnace in the embodiment of the utility model, a fixing piece is installed at the bottom of the guide tube of the single crystal furnace, and a distance measuring silicon column is matched with the internal thread of the through hole on the fixing piece. The distance measuring silicon column can directly measure the liquid mouth distance, so that the measurement of the liquid mouth distance is more accurate. At the same time, the distance that the distance measuring silicon column extends out of the bottom of the guide tube can be adjusted to flexibly meet the measurement requirements of different liquid mouth distances. The processing error of the length of the distance measuring silicon column can be corrected at the production site, and the accuracy of the liquid mouth distance measurement is further improved, thereby improving the quality of seed crystal generation and the success rate of crystal pulling.

[0008] According to some embodiments of the present invention, the ranging silicon column includes a first silicon column segment and a second silicon column segment connected in sequence, the outer diameter of the first silicon column segment is larger than the outer diameter of the second silicon column segment, and at least part of the first silicon column segment extends into the through hole.

[0009] According to some embodiments of the present invention, the outer diameter of the first silicon column segment gradually decreases in a direction toward the second silicon column segment, and the first external thread is formed on an outer peripheral wall of the first silicon column segment.

[0010] According to some embodiments of the utility model, the through hole includes a first hole segment and a second hole segment connected to each other, the inner diameter of the first hole segment is larger than the inner diameter of the second hole segment, part of the first silicon column segment is arranged in the first hole segment and abuts against the bottom wall of the first hole segment, part of the second silicon column segment is arranged in the second hole segment, the first internal thread is formed on the inner circumferential wall of the second hole segment, and the first external thread is formed on the outer circumferential wall of the second silicon column segment.

[0011] According to some embodiments of the present invention, the axial length of the ranging silicon column is L 1 , wherein the L 1 Meet: 10mm≤L 1 ≤45mm.

[0012] According to some embodiments of the present invention, the length of the fixing member in the axial direction of the ranging silicon column is L 2 , wherein the L 2 Meet: 20mm≤L 2 ≤42mm.

[0013] According to some embodiments of the present invention, the fixing member is a quartz member, a single crystal silicon member or a graphite member.

[0014] According to the second aspect of the present invention, the single crystal furnace comprises: a guide tube, the bottom wall of which is formed with a first mounting hole; a mounting plate, the mounting plate is arranged in the first mounting hole, a side surface of the mounting plate adjacent to the center of the guide tube is flush with a side surface of the bottom wall of the guide tube, and a second mounting hole is formed on the mounting plate; a measuring device, the fixing part of the measuring device is arranged in the second mounting hole, and the measuring device is a measuring device for a single crystal furnace according to the first aspect of the present invention.

[0015] According to some embodiments of the present invention, a second internal thread is formed on the inner peripheral wall of the second mounting hole, a second external thread is formed on the outer peripheral wall of the fixing member, and the second external thread cooperates with the second internal thread.

[0016] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0018] Figure 1 is a partial cross-sectional view of a single crystal furnace according to an embodiment of the utility model;

[0019] Figure 2 yes Figure 1 A partial enlarged view of the single crystal furnace shown in FIG.

[0020] Figure 3 is a schematic diagram of a distance measuring silicon column of a measuring device according to an embodiment of the utility model;

[0021] Figure 4 It is a schematic diagram of a measuring device according to another embodiment of the utility model.

[0022] Reference numerals:

[0023] 100: measuring device;

[0024] 1: fixing member; 11: through hole; 112: first hole section; 113: second hole section; 2: ranging silicon column; 21: first external thread; 22: first silicon column section; 23: second silicon column section;

[0025] 200: single crystal furnace; 201: guide tube; 2011: first mounting hole; 202: mounting plate; 2021: second mounting hole; 203: water-cooled heat shield. DETAILED DESCRIPTION

[0026] Reference below Figure 1-Figure 4A measuring device 100 for a single crystal furnace 200 according to an embodiment of the first aspect of the present utility model is described.

[0027] like Figure 1-Figure 4 As shown, a measuring device 100 for a single crystal furnace 200 according to an embodiment of the first aspect of the utility model comprises a fixing member 1 and a distance measuring silicon column 2 .

[0028] Specifically, a through hole 11 is formed on the fixing member 1, and the fixing member 1 is suitable for being installed at the bottom of the guide tube 201 of the single crystal furnace 200. One end of the distance measuring silicon column 2 extends into the through hole 11, and the other end of the distance measuring silicon column 2 extends in a direction away from the fixing member 1. Among them, a first internal thread is formed on the inner peripheral wall of the through hole 11, and a first external thread 21 is formed on the outer peripheral wall of the distance measuring silicon column 2, and the first external thread 21 cooperates with the first internal thread. Among them, when the distance measuring silicon column 2 touches the liquid surface of the molten silicon, the length of the distance measuring silicon column 2 beyond the bottom of the guide tube 201 is used to show the liquid mouth distance. If the liquid mouth distance is too large, it will affect the seed crystal pulling, that is, it will cause the crystal pulling to break. If the liquid mouth distance is too small, it will cause the water-cooled heat shield 203 (the bottom of the water-cooled heat shield 203 is flush with the bottom of the guide tube 201) to contact with the molten silicon liquid, which is easy to cause the water-cooled heat shield 203 to explode.

[0029] For example, in Figure 1 and Figure 2 In the example, the fixing member 1 is suitable for connecting the bottom of the guide tube 201 and the ranging silicon column 2 to increase the stability of the installation and adjustment of the ranging silicon column 2 at the bottom of the guide tube 201. The first external thread 21 of the ranging silicon column 2 and the first internal thread of the inner wall of the through hole 11 cooperate to simplify the installation and adjustment of the ranging silicon column 2 on the fixing member 1.

[0030] That is to say, the distance measuring silicon column 2 is conducive to threaded cooperation on the fixing part 1 to realize the installation of the distance measuring silicon column 2 on the fixing part 1. The distance measuring silicon column 2 rotates relative to the fixing part 1 to adjust the length of the distance measuring silicon column 2 extending from the bottom of the guide tube 201, so that the distance measuring silicon column 2 can directly measure the distance between the molten silicon liquid surface and the bottom of the guide tube 201, that is, it can directly measure the liquid mouth distance, so that the measurement of the liquid mouth distance is more accurate. Therefore, the measuring device 100 can flexibly meet the measurement requirements of different liquid mouth distances, and at the same time can correct the processing error of the length of the distance measuring silicon column 2 at the production site, further improving the accuracy of the liquid mouth distance measurement, thereby improving the quality of seed crystal generation and the success rate of crystal pulling.

[0031] For example, in actual use, when the liquid mouth distance needs to be set to 30 mm, the length of the ranging silicon column 2 beyond the bottom of the guide tube 201 is 30 mm. The molten silicon liquid level rises, and when the ranging silicon column 2 touches the molten silicon liquid level, the user can directly observe the contact between the molten silicon liquid level and the ranging silicon column 2. At the same time, a CCD measurement system (Charge-Coupled Device, a measuring instrument that serves as an image sensor. The CCD measurement system can convert the image of the surface of an object into a digital signal, thereby realizing the measurement and analysis of parameters such as the size, shape, and position of the object) can be used for automatic monitoring and calibration. When the user monitors and / or the CCD measurement system monitors that the ranging silicon column 2 is away from the bottom wall of the guide tube 201 and just touches the molten silicon liquid level, the liquid mouth distance at this time is 30 mm. Among them, the CCD measurement system is an existing measurement method, and no further elaboration is made here.

[0032] In addition, only one ranging silicon column 2 is provided at the bottom of the guide tube 201 of the single crystal furnace 200 to measure different liquid mouth distances, reducing the interference of the ranging silicon column 2 on the molten silicon liquid level, thereby improving the crystal pulling stability of the single crystal furnace 200 and improving the quality of the pulled single crystal.

[0033] According to the measuring device 100 for a single crystal furnace 200 of the embodiment of the utility model, a fixing part 1 is installed at the bottom of the guide tube 201 of the single crystal furnace 200, and a distance measuring silicon column 2 is matched with the internal thread of the through hole 11 on the fixing part 1. The distance measuring silicon column 2 can directly measure the liquid mouth distance, so that the measurement of the liquid mouth distance is more accurate. At the same time, the distance that the distance measuring silicon column 2 extends out of the bottom of the guide tube 201 can be adjusted to flexibly meet the measurement requirements of different liquid mouth distances. The processing error of the length of the distance measuring silicon column 2 can be corrected at the production site, which further improves the accuracy of the liquid mouth distance measurement, thereby improving the quality of seed crystal generation and the success rate of crystal pulling.

[0034] According to some embodiments of the present invention, referring to Figure 1-Figure 3 The distance measuring silicon column 2 includes a first silicon column segment 22 and a second silicon column segment 23 connected in sequence, the outer diameter of the first silicon column segment 22 is greater than the outer diameter of the second silicon column segment 23, and at least part of the first silicon column segment 22 extends into the through hole 11. The second silicon column segment 23 can extend out of the through hole 11 and extend away from the bottom of the guide tube 201, and at least one end of the first silicon column segment 22 away from the second silicon column segment 23 extends into the through hole 11, so as to prevent the distance measuring silicon column 2 from excessively extending out of the through hole 11, thereby increasing the installation stability of the distance measuring silicon column 2 on the fixing member 1 and improving the reliability of adjusting the length of the distance measuring silicon column 2.

[0035] Further, refer to Figure 3, the outer diameter of the first silicon column segment 22 gradually decreases in the direction toward the second silicon column segment 23, and a first external thread 21 is formed on the outer peripheral wall of the first silicon column segment 22. That is to say, the first external thread 21 on the outer peripheral wall of the first silicon column segment 22 cooperates with the first internal thread on the inner peripheral wall of the through hole 11 to realize the installation and length adjustment of the ranging silicon column 2 on the fixing member 1. The outer diameter of the first silicon column segment 22 on the side facing the second silicon column segment 23 is smaller, so that at least part of the first silicon column segment 22 toward the second silicon column segment 23 can be extended out of the through hole 11, thereby increasing the adjustable length of the ranging silicon column 2; the outer diameter of the end of the first silicon column segment 22 away from the second silicon column segment 23 is larger, which prevents the ranging silicon column 2 from escaping from the through hole 11, thereby increasing the use stability of the ranging silicon column 2.

[0036] According to some embodiments of the present invention, referring to Figure 1-Figure 4 The through hole 11 includes a first hole segment 112 and a second hole segment 113 which are connected to each other. The inner diameter of the first hole segment 112 is larger than the inner diameter of the second hole segment 113. Part of the first silicon column segment 22 is arranged in the first hole segment 112 and abuts against the bottom wall of the first hole segment 112. Part of the second silicon column segment 23 is arranged in the second hole segment 113. A first internal thread is formed on the inner circumferential wall of the second hole segment 113, and a first external thread 21 is formed on the outer circumferential wall of the second silicon column segment 23.

[0037] That is to say, the outer diameter of the portion of the first silicon column segment 22 arranged in the first hole segment 112 is larger than the outer diameter of the portion of the first silicon column segment 22 arranged in the second hole segment 113, and the portion of the first silicon column segment 22 arranged in the first hole segment 112 cannot enter the second hole segment 113, so that the length adjustment of the ranging silicon column 2 is achieved by utilizing the cooperation between the portion of the first silicon column segment 22 arranged in the first hole segment 112 and the first internal thread in the second hole segment 113.

[0038] Among them, refer to Figure 3 , the axial length of the ranging silicon column 2 is L 1 , where L 1 Meet: 10mm≤L 1 ≤45mm. When L 1 When L is less than 10 mm, the axial length of the silicon column 2 is small, so the length of the silicon column 2 extending from the bottom of the guide tube 201 is small, that is, the distance between the bottom of the water-cooled heat shield 203 flush with the bottom of the guide tube 201 and the molten silicon liquid surface is small, and the molten silicon is easy to cause damage to the water-cooled heat shield 203 and the guide tube 201; when L 1 When L is greater than 45 mm, the axial length of the distance measuring silicon column 2 is too long, so that the liquid inlet distance measurable by the distance measuring silicon column 2 exceeds the use requirement of the single crystal furnace 200, thereby causing a waste of the distance measuring silicon column 2. 1≤45mm, so that the axial length of the ranging silicon column 2 can be set more reasonably, so that the liquid inlet distance measurable by the ranging silicon column 2 meets the use requirements of the single crystal furnace 200, and the molten silicon can be prevented from causing damage to the water-cooled heat shield 203 and the guide tube 201.

[0039] According to some embodiments of the present invention, referring to Figure 4 The length of the fixing member 1 in the axial direction of the ranging silicon column 2 is L 2 , where L 2 Meet: 20mm≤L 2 ≤42mm. When L 2 When L is less than 20 mm, the length of the fixing part 1 in the axial direction of the ranging silicon column 2 is small, and when the connection area between the ranging silicon column 2 and the fixing part 1 is ensured, the length of the ranging silicon column 2 that can be adjusted relative to the fixing part 1 is reduced, or when the length of the ranging silicon column 2 is large, the connection stability between the ranging silicon column 2 and the fixing part 1 is reduced; when L is less than 20 mm, the length of the fixing part 1 in the axial direction of the ranging silicon column 2 is small, and the connection area ... 2 When the length of the fixing part 1 in the axial direction of the ranging silicon column 2 is greater than 42 mm, the size of the fixing part 1 is larger while meeting the use requirements of the ranging silicon column 2, which increases the connection area between the fixing part 1 and the bottom of the guide tube 201, and easily causes the fixing part 1 to interfere with the installation of other components. Therefore, by setting the length of the fixing part 1 in the axial direction of the ranging silicon column 2 to 20 mm ≤ L 2 ≤42mm, which is conducive to the length adjustment of the ranging silicon column 2 in the through hole 11 of the fixing member 1 and avoids the interference of the installation of other components caused by the large size of the fixing member 1.

[0040] According to some embodiments of the utility model, the fixing part 1 is a quartz part, a single crystal silicon part or a graphite part. Among them, the physical and chemical properties of the quartz part are relatively stable, that is, it has excellent thermal stability and electrical insulation, and good acid and alkali resistance; the single crystal silicon part has high strength, good toughness, stable performance, and a long service life. The graphite part has good high temperature resistance, thermal shock resistance and electrical conductivity. Therefore, using a quartz part, a single crystal silicon part or a graphite part as the fixing part 1 is conducive to increasing the structural stability of the fixing part 1 and extending the service life of the fixing part 1.

[0041] Reference Figure 1 and Figure 2According to the second embodiment of the utility model, the single crystal furnace 200 includes a guide tube 201, a mounting plate 202 and a measuring device 100. The bottom wall of the guide tube 201 is formed with a first mounting hole 2011. The mounting plate 202 is arranged in the first mounting hole 2011, and a side surface of the mounting plate 202 adjacent to the center of the guide tube 201 is flush with a side surface of the bottom wall of the guide tube 201, and a second mounting hole 2021 is formed on the mounting plate 202. The fixing member 1 of the measuring device 100 is arranged in the second mounting hole 2021, and the measuring device 100 is the measuring device 100 for the single crystal furnace 200 according to the first embodiment of the utility model.

[0042] In this arrangement, the mounting plate 202 is used to intercept the side of the first mounting hole 2011 away from the center of the guide tube 201, so as to facilitate the installation of the fixing member 1 in the second mounting hole 2021. At the same time, the ranging silicon column 2 connected to the fixing member 1 uses the bottom wall of the guide tube 201 as a positioning reference, thereby increasing the accuracy of the ranging silicon column 2 in measuring the liquid mouth distance, which is beneficial to improving the quality of the seed crystal generation in the single crystal furnace 200 and the success rate of crystal pulling.

[0043] According to the single crystal furnace 200 of the embodiment of the present invention, by adopting the above-mentioned measuring device 100, it is beneficial to improve the measurement accuracy of the liquid mouth distance, thereby improving the quality of seed crystal generation and the success rate of crystal pulling in the single crystal furnace 200.

[0044] Further, refer to Figure 4 , a second internal thread is formed on the inner circumferential wall of the second mounting hole 2021, and a second external thread is formed on the outer circumferential wall of the fixing member 1, and the second external thread cooperates with the second internal thread. The fixing member 1 is installed on the guide tube 201 by cooperating with the second internal thread on the inner wall of the second mounting hole 2021 through the second external thread, and at the same time, the fixing member 1 can be rotated along the axial direction of the ranging silicon column 2 to adjust the distance between the fixing member 1 and the bottom wall of the guide tube 201. Thus, the single crystal furnace 200 can adjust the relative position of the ranging silicon column 2 and the fixing member 1, and adjust the position of the fixing member 1 in the second mounting hole 2021, so that the measuring device 100 meets the measurement requirements of different liquid mouth distances, thereby improving the flexibility of measuring the liquid mouth distance. In addition, the position of the fixing member 1 in the second mounting hole 2021 can be adjusted, so that the axial length of the ranging silicon column 2 can be reduced to ensure the structural stability of the ranging silicon column 2 and extend the service life of the ranging silicon column 2.

[0045] Optionally, the directions of the first external thread 21 and the first internal thread may be opposite to the directions of the second external thread and the second internal thread, so as to improve the stability of the ranging silicon column 2 relative to the fixing member 1 and the stability of the fixing member 1 relative to the guide tube 201.

[0046] Optionally, the ranging silicon column 2 is a silicon column, which has good stability, high efficiency, small size, light weight, high temperature resistance and good chemical stability under high pressure and high frequency environment. By using a silicon column as the ranging silicon column 2, the user can observe the contact between the molten silicon liquid surface and the ranging silicon column 2. At the same time, since the silicon column can conduct electricity, it is also possible to understand whether the ranging silicon column 2 is in contact with the molten silicon liquid surface by collecting electrical signals. The user can use observation to determine the liquid mouth distance, or can collect electrical signals to determine the liquid mouth distance, or can use both the observation method and the electrical signal collection method to determine the liquid mouth distance.

[0047] This is beneficial to improving the use stability of the distance measuring silicon column 2 and improving the accuracy of measurement.

[0048] The purity of the silicon column is above 99.99%, which makes the distance measuring silicon column 2 have a better conductive effect.

[0049] Other structures and operations of the single crystal furnace 200 according to the embodiment of the present invention are known to those skilled in the art and will not be described in detail here.

[0050] In the description of the present invention, it is necessary to understand that the terms "center", "length", "up", "down", "front", "back", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicating orientations or positional relationships are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present invention.

[0051] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0052] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment or example.

[0053] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A measuring device for a single crystal furnace, characterized in that: include: A fixing member, wherein a through hole is formed on the fixing member, and the fixing member is suitable for being installed at the bottom of the guide tube of the single crystal furnace; A distance measuring silicon column, one end of which extends into the through hole, and the other end of which extends in a direction away from the fixing member; Wherein, a first internal thread is formed on the inner peripheral wall of the through hole, a first external thread is formed on the outer peripheral wall of the ranging silicon column, and the first external thread and the first internal thread match; The distance measuring silicon column comprises a first silicon column segment and a second silicon column segment connected in sequence, the outer diameter of the first silicon column segment is greater than the outer diameter of the second silicon column segment, and at least a portion of the first silicon column segment extends into the through hole; The outer diameter of the first silicon column segment gradually decreases in a direction toward the second silicon column segment, and the first external thread is formed on the outer peripheral wall of the first silicon column segment.

2. The measuring device for a single crystal furnace according to claim 1, characterized in that: The through hole includes a first hole segment and a second hole segment which are connected to each other, the inner diameter of the first hole segment is larger than the inner diameter of the second hole segment, part of the first silicon column segment is arranged in the first hole segment and abuts against the bottom wall of the first hole segment, part of the second silicon column segment is arranged in the second hole segment, the first internal thread is formed on the inner circumferential wall of the second hole segment, and the first external thread is formed on the outer circumferential wall of the second silicon column segment.

3. The measuring device for a single crystal furnace according to claim 1, characterized in that: The axial length of the ranging silicon column is L1, wherein L1 satisfies: 10mm≤L1≤45mm.

4. The measuring device for a single crystal furnace according to claim 1, characterized in that: The length of the fixing member in the axial direction of the ranging silicon column is L2, wherein L2 satisfies: 20mm≤L2≤42mm.

5. The measuring device for a single crystal furnace according to any one of claims 1 to 4, characterized in that: The fixing member is a quartz member, a single crystal silicon member or a graphite member.

6. A single crystal furnace, characterized in that: include: A guide tube, wherein a first mounting hole is formed on a bottom wall of the guide tube; A mounting plate, the mounting plate being arranged in the first mounting hole, a side surface of the mounting plate adjacent to the center of the guide cylinder being flush with a side surface of the bottom wall of the guide cylinder, and a second mounting hole being formed on the mounting plate; A measuring device, wherein the fixing part of the measuring device is arranged in the second mounting hole, and the measuring device is a measuring device for a single crystal furnace according to any one of claims 1-5.

7. The single crystal furnace according to claim 6, characterized in that: A second internal thread is formed on the inner peripheral wall of the second mounting hole, a second external thread is formed on the outer peripheral wall of the fixing member, and the second external thread matches the second internal thread.

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