Substrate surface etching equipment for integrating photon / electronic device

Abstract

The utility model provides substrate surface etching equipment for integrating photon / electronic devices. The substrate surface etching equipment comprises a container, a supporting table located in the container and a sound wave generating device. The container is used for containing a mixed solution containing a liquid and micro-nano particles; a patterned barrier layer is arranged on the surface of the substrate, and an exposed region which is not covered by the barrier layer exists on the surface of the substrate; in the working state, the substrate is fixed to the surface of the supporting table, the supporting table is immersed in the mixed liquid, and the sound wave generating device generates sound waves and transmits the sound waves to the mixed liquid. The equipment is simple, easy to operate and low in cost, the micro-nano particles can impact the exposed area on the surface of the substrate under the driving action of sound waves by utilizing the etching equipment so as to realize etching of the area, and the equipment has the advantages of no pollution and high controllability and is suitable for large-scale application of substrate etching of integrated photon / electronic devices.

Description

Technical Field

[0001] The utility model belongs to the technical field of integrated photon devices or integrated electronic devices, and particularly relates to a substrate surface etching device for integrated photon / electronic devices. Background Art

[0002] In recent years, with the rapid development of information technologies such as big data, artificial intelligence, high-speed networks, and quantum information, there is an urgent need for integrated photon devices or integrated electronic devices (referred to as integrated photon / electronic devices) with functions such as low transmission loss, high-density integration, and low modulation power consumption. The primary problem to be solved in the development of high-performance integrated photon / electronic devices is how to etch various micro-nano structures on the substrate surface for integrated photon / electronic devices.

[0003] For example, lithium niobate (LiNbO 3 , LN) and lithium tantalate (LiTaO 3 , LT) have excellent nonlinear optical effects, electro-optic effects, acousto-optic effects, piezoelectric effects, etc., and can realize the on-chip integration of various photon devices or electronic devices. Therefore, they are ideal substrate materials for preparing high-performance integrated photon / electronic devices. The primary problem to be solved in the development of high-performance integrated photon / electronic devices based on lithium niobate and lithium tantalate is how to etch various micro-nano structures on their surfaces.

[0004] Etching refers to the process of selectively removing excess material from the substrate surface by chemical or physical methods to form the desired micro-nano pattern. Etching is one of the important steps in semiconductor micro-nano manufacturing processes. Classified by process, it can be divided into dry etching and wet etching. Dry etching is a process method that uses plasma or high-energy ion beams to bombard the exposed material on the substrate surface through the patterned barrier layer window. Dry etching requires the use of gases with extremely high chemical activity, has high requirements for the processing environment and equipment, is complex to operate, and has high processing costs. For lithium niobate substrates and lithium tantalate substrates, in existing dry etching technologies, fluorine-based gases are usually used to etch lithium niobate and lithium tantalate, but lithium ions in the crystal will combine with fluorine ions in the etching gas to form lithium fluoride on the surface, hindering further etching and causing rough sidewalls. Wet etching is to use liquid chemical reagents, usually chemically reactive solutions, to chemically react and corrode the wafer with a patterned barrier layer to achieve etching. Wet etching cannot achieve anisotropy during the etching process and will introduce or generate toxic and harmful chemical substances during operation, causing environmental pollution. For lithium niobate substrates and lithium tantalate substrates, in existing wet etching technologies, hydrofluoric acid is usually used to etch them, but lithium niobate and lithium tantalate have high chemical stability and it is difficult to complete the etching of the target structure in a short time. Summary of the Utility Model

[0005] In view of the above technical status quo, the present utility model provides a substrate surface etching device for integrated photon / electronic devices, which has the advantages of simple structure, convenient operation, energy conservation and environmental protection.

[0006] The technical solution of the present utility model is: a substrate surface etching device for integrated photon / electronic devices, comprising a container, a support table located in the container, and an acoustic wave generating device;

[0007] The container is used to hold a mixed liquid including liquid and micro-nano particles;

[0008] A patterned barrier layer is provided on the surface of the substrate, and there is an area on the surface of the substrate that is not covered by the barrier layer and is exposed, which is called the exposed area;

[0009] In the working state, the substrate is fixed on the surface of the support table, the support table is immersed in the mixed liquid, and the acoustic wave generating device generates acoustic waves and transmits them to the mixed liquid.

[0010] Regarding acoustic waves, there are concepts of narrow-sense acoustic waves and broad-sense acoustic waves. Narrow-sense acoustic waves refer to mechanical waves generated by the vibration of a sound source, and the sound source refers to an object that can emit sound. Broad-sense acoustic waves refer to mechanical waves generated by the vibration of a vibration source, and this mechanical wave propagates in the form of the narrow-sense acoustic waves, and the vibration source is not limited, including the sound source.

[0011] In the present invention, the acoustic waves mentioned all refer to the broad-sense acoustic waves.

[0012] In the present invention, the acoustic waves can propagate in the mixed liquid.

[0013] As an implementation manner, the acoustic wave generating device includes an acoustic wave generator and an acoustic wave transducer. The acoustic wave generator converts electric power into a high-frequency alternating current signal matching the acoustic wave transducer, and the acoustic wave transducer converts the input electric power into mechanical vibration power and outputs it in the form of vibration, that is, the acoustic waves are obtained.

[0014] As an implementation manner, the acoustic wave generator is arranged outside the container, the acoustic wave transducer is arranged in the mixed liquid, and the acoustic wave vibration output by the acoustic wave transducer is directly transmitted to the mixed liquid and propagates in the mixed liquid. As another implementation manner, the acoustic wave transducer is placed at the bottom of the container, and the acoustic waves are transmitted to the mixed liquid in the container through the container wall and propagate in the mixed liquid.

[0015] The fixing method of the substrate is not limited. It can be bonded to the support table through an adhesive, adsorbed on the support table through a suction device, or fixedly connected to the support table through a connecting piece. As a further preference, the support table is rotatable to assist in enhancing the movement of the micro-nano particles. The rotation speed of the support table is preferably 1 rpm - 1000 rpm. As a further preference, the support table is liftable, which is beneficial for the installation and disassembly of the substrate. As a preference, the support table can be set in terms of direction and quantity as needed.

[0016] The structure of the substrate is not limited. It can be a block structure composed of a single material, called a wafer, or a composite structure composed of multiple materials stacked layer by layer. The top layer of the composite structure is a thin film material, including but not limited to lithium niobate, lithium tantalate, etc. As a preference, the materials of the wafer include lithium niobate, lithium tantalate, sapphire, silicon nitride, silicon carbide, aluminum nitride, gallium oxide, gallium nitride, gallium arsenide, gallium antimonide, indium phosphide, zinc oxide, or diamond, etc. As a preference, the composite structure includes lithium niobate on insulator (LNOI), lithium tantalate on insulator (LTOI), thin film lithium niobate (TFLN), thin film lithium tantalate (TFLT), etc.

[0017] As a preference, first, the surface of the substrate is cleaned to remove impurities, and then the barrier layer is formed on the surface of the substrate. As a way to achieve this, the substrate is placed in one or several of acetone, ethanol, deionized water, etc. for ultrasonic cleaning, and then taken out and dried. The drying method is not limited, including one or several of baking, nitrogen blowing dry, etc.

[0018] The method of forming a patterned barrier layer on the surface of the substrate is not limited. For example, a photoresist is spin-coated on the surface of the substrate, and then a patterned barrier layer is formed through lithography; or, a physical or chemical coating process is used to form a patterned barrier layer on the surface of the substrate. The barrier layer obtained by this method is called a hard barrier layer. The materials of the hard barrier layer are not limited, including one or several of chromium, titanium, nickel, aluminum, copper, zinc, tungsten, silicon oxide, silicon nitride, titanium nitride, diamond-like carbon, etc.

[0019] The thickness of the barrier layer is not limited and can be adjusted according to the actual situation. For example, the thickness is 10 nm - 500 nm.

[0020] The liquid does not chemically react with the substrate material. The liquid is not limited and includes at least one of water, alcohol, glycerin, kerosene, machine oil, animal oil, etc.

[0021] The micro-nano particles do not chemically react with the liquid, and the micro-nano particles do not chemically react with the substrate material.

[0022] The material of the micro-nano particles is not limited, including one or several of diamond, silicon oxide, metal oxide, metal nitride, transition metal carbide, etc. The metal oxide includes, but is not limited to, one or several of aluminum oxide, cerium oxide, chromium oxide, zirconium oxide, iron oxide, manganese sesquioxide, lanthanum oxide, yttrium oxide, etc. The metal nitride includes, but is not limited to, one or several of gallium nitride, aluminum nitride, indium nitride, etc. The transition metal carbide includes, but is not limited to, one or several of silicon carbide, titanium carbide, calcium carbide, boron carbide, tungsten carbide, etc.

[0023] The particle size of the micro-nano particles is in the micron order or the nano order. Preferably, the particle size of the micro-nano particles is 1 nm - 100 μm.

[0024] The mass-volume concentration of the micro-nano particles in the mixed solution is not limited and depends on the actual etching requirements. For example, it can be 0.0001 g / L - 1000 g / L.

[0025] To improve the etching effect, the micro-nano particles have a relatively high hardness. Further preferably, the hardness of the micro-nano particles is greater than the hardness of the substrate material. For example, when the substrate is a lithium niobate wafer, its Mohs hardness is 5.0 - 6.0, and micro-nano particles with a Mohs hardness above 6.0 are selected for etching. When the thin film material is a lithium tantalate film, its hardness is 5.5 - 6.0, and micro-nano particles with a Mohs hardness above 6.0 are selected for etching.

[0026] The vibration direction of the sound wave can be set as needed. To increase the impact rate on the exposed area of the substrate surface not covered by the blocking layer, preferably, the vibration direction of the sound wave generated by the sound wave generating device is perpendicular to the surface of the exposed area of the substrate.

[0027] To improve the movement ability of the micro-nano particles, it is preferred to heat the mixed solution. A higher temperature is conducive to the increased movement of the micro-nano particles. Preferably, the temperature of the mixed solution is 10°C - 100°C.

[0028] Preferably, the vibration frequency range of the sound wave is 20 Hz - 1500 KHz. To accelerate the movement of the micro-nano particles and thus improve the impact efficiency on the exposed area, further preferably, the vibration frequency is 1 KHz - 1500 KHz.

[0029] The sound power density of the sound wave is 1 watt per liter - 1500 watts per liter.

[0030] Adjust the impact force of the micro-nano particles by adjusting one or several of the type, concentration, particle size, hardness of the micro-nano particles in the mixed solution, the vibration frequency, power density, vibration time of the ultrasonic vibration, and the temperature of the mixed solution. The impact force depends on specific etching requirements.

[0031] Preferably, after the etching is completed, take out the substrate for cleaning, and then remove the barrier layer to obtain a patterned micro-nano structure surface layer after etching. Preferably, polish the surface layer using a polishing process to reduce the surface roughness of the micro-nano structure of the surface layer.

[0032] The method for removing the barrier layer is not limited. When a photoresist is spin-coated on the surface of the substrate and then the barrier layer is formed by lithography, it is preferred to ultrasonically clean the barrier layer using an organic solvent. When the barrier layer is a hard barrier layer, it is preferred to use methods such as plasma treatment to remove the barrier layer.

[0033] After etching, the mixed solution contains debris of the substrate material, and this debris can be used as the micro-nano particles in the mixed solution for acoustic wave-driven etching of the substrate placed in the mixed solution subsequently.

[0034] Compared with the prior art, the beneficial effects of the present utility model at least include:

[0035] (1) The present utility model provides a substrate surface etching device for integrated photon / electronic devices, including a container for containing a mixed solution containing micro-nano particles, a support table, and an acoustic wave generating device. A patterned barrier layer is provided on the surface of the substrate. In the working state, the substrate is fixed on the surface of the support table, the support table is immersed in the mixed solution, and the acoustic wave generating device generates acoustic waves that are transmitted to the mixed solution and propagate in the mixed solution; under the action of the acoustic waves, the micro-nano particles impact the area on the surface of the substrate that is not covered by the barrier layer and is exposed, causing the substrate material on the surface of this area to fall off under the action of the impact force, thereby realizing the etching of this exposed area.

[0036] (2) The etching device provided in the present utility model has a simple structure and low cost, can realize the etching of the substrate surface by ultrasonic driving of micro-nano particles, and can adjust the impact force of the micro-nano particles by adjusting one or several of the type, particle size, concentration, hardness of the micro-nano particles, the vibration frequency, vibration time of the acoustic wave, and the temperature of the mixed solution, etc. according to actual etching requirements, with strong controllability.

[0037] (3) Using the etching device of the present utility model, the preparation of various micro-nano structures based on lithium niobate crystals and lithium tantalate crystals can be realized.

[0038] (4) The present utility model is suitable for large-scale production and commercialization of substrate etching. The etched mixed liquid can be reused, which is energy-saving and environmentally friendly. The etched substrate can be used for integrated photonic / electronic devices, realizing large-scale high-performance integrated photonic / electronic devices. Description of the Drawings

[0039] Figure 1 is a schematic structural diagram of the substrate surface etching device for integrated photonic / electronic devices in Embodiment 1.

[0040] Figure 2 is a schematic process diagram of wafer surface etching in Embodiment 1.

[0041] Figure 3 is a schematic structural diagram of the substrate surface etching device for integrated photonic / electronic devices in Embodiment 2.

[0042] Figure 4 is a schematic structural diagram of a lithium niobate thin film on insulator in Embodiment 2.

[0043] Figure 1 and Figure 3 the numerical markings in are: container 10, mixed liquid 20, micro-nano particles 21, substrate 30, particles detached from the substrate 31, exposed area 32 on the substrate surface not covered by the barrier layer, barrier layer 40, support table 50, acoustic wave generator 60, acoustic wave transducer 70. Detailed Description of the Embodiments

[0044] The present utility model will be further described in detail below in conjunction with the embodiments. It should be noted that the following embodiments are intended to facilitate the understanding of the present utility model. Some non-essential improvements and adjustments made by those skilled in the art to the present utility model based on the above content of the present utility model still fall within the protection scope of the present utility model.

[0045] Embodiment 1:

[0046] In this embodiment, the etching device for the substrate of integrated photonic / electronic devices is as Figure 1 shown, including a container 10 for containing the mixed liquid 20 and an acoustic wave generating device. The mixed liquid 20 includes a liquid and micro-nano particles 21.

[0047] In this embodiment, the mixed liquid 20 is obtained by dispersing alumina particles with a diameter of 0.2 μm in water. The Mohs hardness of alumina is 8.8, and the concentration of alumina particles in the mixed liquid is 15 g / L.

[0048] In this embodiment, the substrate 30 for integrated photonic devices or integrated electronic devices is a lithium niobate wafer with an integral block structure. The Mohs hardness of the lithium niobate wafer is 5.0 - 6.0, and a patterned barrier layer 40 is provided on the surface of the substrate. The barrier layer 40 covers a partial area of the surface of the substrate 30, that is, there is an area 32 on the substrate surface that is not covered by the barrier layer. In this embodiment, as Figure 2 shown, the method for forming the barrier layer 40 is as follows: The lithium niobate wafer is successively immersed in acetone, ethanol, and deionized water for ultrasonic cleaning twice each, and then dried with nitrogen. Then, it is placed in a drying oven for baking, and the temperature in the drying oven is 90 °C. Then, a layer of photoresist is evenly coated on the surface of the lithium niobate wafer, and the pattern on the mask plate is transferred to the photoresist through the photolithography process of exposure and development, obtaining a patterned barrier layer with a thickness of 100 nm. The barrier layer covers a partial area of the surface of the lithium niobate wafer, and there is an exposed area on the surface of the lithium niobate wafer that is not covered by the barrier layer.

[0049] In this embodiment, the etching equipment further includes a support table 50. In the working state, the substrate 30 with the barrier layer 40 is fixed on the surface of the support table, and then the support table is immersed in the mixed solution 20.

[0050] In this embodiment, the acoustic wave generating device includes an acoustic wave generator 60 and an acoustic wave transducer 70. The acoustic wave generator 60 is arranged outside the container 10, and the acoustic wave transducer 70 is arranged in the mixed solution 20.

[0051] In the working state, the substrate 30 with the barrier layer 40 is immersed in the mixed solution 20, the acoustic wave generator 60 and the acoustic wave transducer 70 are turned on. The acoustic wave generator 60 converts electric power into a high-frequency alternating current signal matching the acoustic wave transducer 70 and outputs it to the acoustic wave transducer 70. The acoustic wave transducer 70 converts the input electric power into an acoustic wave vibration with a frequency of 20 KHz - 1500 KHz and transmits it into the mixed solution 20 and propagates in it. As Figure 1 、 2 shown, under the driving action of the acoustic wave, the alumina particles therein move rapidly and impact the exposed area on the surface of the lithium niobate wafer that is not covered by the barrier layer, causing the wafer particles on the surface of the exposed area to fall off under the impact force to achieve etching. By controlling the etching time, a micro-nano structure with an etching depth of 30 nm is obtained.

[0052] In this embodiment, the direction of the high-frequency vibration output by the output end 71 of the acoustic wave transducer is perpendicular to the area 32 on the substrate surface that is not covered by the barrier layer.

[0053] In this embodiment, to improve the movement ability of the micro-nano particles 21, the mixed solution 20 is heated to 20 °C - 100 °C.

[0054] In this embodiment, the support table 50 is rotatable, thereby assisting in enhancing the movement of the micro-nano particles 21. The rotation speed of the support table is preferably 1 rpm - 1000 rpm.

[0055] In this embodiment, according to specific etching requirements, the impact force of the micro-nano particles is adjusted by adjusting one or several of the type of the micro-nano particles 21, the concentration in the mixed liquid, the particle size, the hardness, the vibration frequency, the power density, the vibration time of the sound wave, and the temperature of the mixed liquid.

[0056] In this embodiment, after the etching is completed, as Figure 2 shown, the wafer is taken out, cleaned, and then the photoresist is removed using an organic solvent and the wafer is cleaned to obtain a patterned micro-nano structure surface layer after etching. Finally, a polishing process is used for polishing treatment to reduce the surface roughness of the micro-nano structure of the surface layer.

[0057] Embodiment 2:

[0058] In this embodiment, the etching equipment for the substrate of the integrated photon / electronic device is as Figure 3 shown, and includes a container 10 for containing the mixed liquid 20 and a sound wave generating device. The mixed liquid 20 includes a liquid and micro-nano particles 21.

[0059] In this embodiment, the mixed liquid 20 is obtained by dispersing cerium oxide particles with a diameter of 100 nm and silicon dioxide particles with a particle size of 50 nm in water. The Mohs hardness of cerium oxide is about 7.0, the Mohs hardness of silicon dioxide is about 7.0, the concentration of cerium oxide in the mixed liquid is 5 g / L, and the concentration of silicon dioxide in the mixed liquid is 5 g / L.

[0060] In this embodiment, as Figure 4 shown, the substrate for the integrated photon device or the integrated electronic device is a composite structure formed by three layers stacked. The bottom layer is a silicon-based bottom layer, the surface of the silicon substrate is a silicon dioxide layer, and the surface of the silicon dioxide layer is a lithium niobate single crystal thin film layer. The Mohs hardness of lithium niobate is 5.0 - 6.0. And a patterned barrier layer 40 is provided on the surface of the substrate. The barrier layer 40 covers a part of the lithium niobate single crystal thin film layer, that is, there is an area 32 on the surface of the substrate that is not covered by the barrier layer. In this embodiment, the formation method of the barrier layer 40 is: after the surface of the lithium niobate single crystal thin film material is cleaned, a hard patterned barrier layer chromium film is prepared by a magnetron sputtering coating process. The barrier layer covers a part of the surface of the single crystal thin film layer, that is, there is an area on the surface of the single crystal thin film layer that is not covered by the barrier layer and is exposed.

[0061] In this embodiment, the etching equipment further includes a support table 50. In the working state, the substrate 30 with the barrier layer 40 is fixed on the surface of the support table, and then the support table is immersed in the mixed liquid 20.

[0062] In this embodiment, the acoustic wave generating device includes an acoustic wave generator 60 and two acoustic wave transducers 70. The acoustic wave generator 60 and the acoustic wave transducers 70 are arranged outside the container 10, and the acoustic wave transducers are placed at the bottom of the container 20.

[0063] In the working state, the substrate 30 with the blocking layer 40 is immersed in the mixed liquid 20, the acoustic wave generator 60 and the acoustic wave transducers 70 are turned on. The acoustic wave generator 60 converts electric power into a high-frequency alternating current signal matching the acoustic wave transducers 70. The acoustic wave transducers 70 convert the input electric power into a mechanical vibration power with a frequency of 20 KHz - 1500 KHz and output it, that is, an acoustic wave is transmitted to the mixed liquid 20 and propagates therein. Under the driving action of the acoustic wave, the cerium oxide particles and the silicon dioxide particles in it move rapidly and impact the exposed area on the surface of the lithium niobate single crystal thin film layer that is not covered by the blocking layer, causing the wafer particles on the surface of the exposed area to fall off under the impact force and realizing etching. By controlling the etching time, a micro-nano structure with an etching depth of 50 nm is obtained.

[0064] In this embodiment, the support table 50 can rotate, thereby assisting in enhancing the movement of the micro-nano particles 21. The rotation speed of the support table is preferably 1 rpm - 1000 rpm.

[0065] In this embodiment, according to specific etching requirements, the impact force of the micro-nano particles is adjusted by adjusting one or several of the type, concentration in the mixed liquid, particle size, hardness of the micro-nano particles 21, the vibration frequency, power density, vibration time of the acoustic wave, and the temperature of the mixed liquid.

[0066] In this embodiment, after the etching is completed, as Figure 2 shown, the wafer is taken out, cleaned, and the photoresist is removed with an organic solvent and the wafer is cleaned to obtain a patterned micro-nano structure surface layer after etching. Finally, a polishing process is used for polishing treatment to reduce the surface roughness of the micro-nano structure of the surface layer.

[0067] Embodiment 3:

[0068] This embodiment is basically the same as Embodiment 1, except that a lithium tantalate wafer is used instead of a lithium niobate wafer. The Mohs hardness of lithium tantalate is 5.5 - 6.0. Etching processing is carried out on the surface of the lithium tantalate wafer to obtain a certain pattern, specifically as follows:

[0069] Step 1: The lithium tantalate wafer is successively immersed in acetone, ethanol, and deionized water for ultrasonic cleaning treatment twice each, then the wafer is dried with nitrogen, and then placed in a drying oven for baking. The temperature in the drying oven is 90 °C;

[0070] Step 2: Uniformly coat a layer of photoresist on the surface of the lithium tantalate wafer obtained after the treatment in Step 1. Then, transfer the pattern on the mask plate to the photoresist through the photolithography process of exposure and development to obtain a patterned barrier layer with a thickness of 120 nm. This barrier layer covers a partial area of the surface of the lithium tantalate wafer, and there are exposed areas on the surface of the lithium tantalate wafer that are not covered by the barrier layer.

[0071] Step 3: Disperse cerium oxide particles with a diameter of 100 nm in water to obtain a mixed solution. The Mohs hardness of cerium oxide is about 7.0, and the concentration of cerium oxide particles is 10 g / L. Then, fix the lithium tantalate wafer treated in Step 2 on a support platform, and then immerse the support platform in this mixed solution.

[0072] Step 4: Turn on the acoustic wave generator to generate acoustic waves with a vibration frequency of 10 KHz, and transmit the acoustic waves to the mixed solution and propagate in it. Under the driving action of the acoustic waves, the cerium oxide particles in it move rapidly due to ultrasonic driving and impact the exposed areas on the surface of the lithium tantalate wafer that are not covered by the barrier layer, causing the wafer particles on the surface of the exposed areas to fall off under the impact force to achieve etching. Control the time to obtain a micro-nano structure with an etching depth of 20 nm.

[0073] Step 5: After the etching is completed, take out the wafer, clean it, use an organic solvent to remove the photoresist and clean the wafer to obtain a patterned micro-nano structure surface layer after etching. Finally, perform a polishing process for polishing treatment to reduce the surface roughness of the micro-nano structure of the surface layer.

[0074] Finally, it should be noted that the specific embodiments described herein are only examples to illustrate the spirit of the present invention, rather than limitations on the implementation manners of the present invention. Those skilled in the art of the present invention can make various modifications or supplements to the described specific embodiments or use similar ways to replace them. It is not necessary and impossible to list all implementation manners here. And these obvious changes or variations derived from the essence of the present invention still fall within the protection scope of the present invention. Interpreting them as any additional limitations is contrary to the spirit of the present invention.

Claims

1. A substrate surface etching device for integrated photonic / electronic devices, characterized in that: It comprises a container, a support platform located in the container, and a sound wave generating device; The container is used to hold a mixed liquid including a liquid and micro-nano particles; A patterned barrier layer is disposed on the surface of the substrate, and there is an exposed area on the surface of the substrate that is not covered by the barrier layer, which is called an exposed area; In the working state, the substrate is fixed on the surface of the support platform, the support platform is immersed in the mixed liquid, and the sound wave generating device generates sound waves and transmits them to the mixed liquid.

2. The substrate surface etching device for integrated photonic / electronic devices according to claim 1, characterized in that: The sound wave generating device comprises a sound wave generator and a sound wave transducer; The acoustic wave generator is used to convert electric power into a high-frequency alternating current signal that matches the acoustic wave transducer; The sound wave transducer is used for converting input electrical power into mechanical vibration power to output the sound wave.

3. The substrate surface etching device for integrated photonic / electronic devices according to claim 1, characterized in that: The sound wave generator is arranged outside the container; The acoustic wave transducer is arranged in the mixed liquid, or the acoustic wave transducer is arranged at the bottom of the container.

4. The substrate surface etching device for integrated photonic / electronic devices according to claim 1, characterized in that: The support platform can be rotated and / or raised and lowered.

5. The substrate surface etching device for integrated photonic / electronic devices according to claim 1, characterized in that: The substrate is a block structure composed of a single material, called a wafer, or a composite structure composed of multiple material layers.

6. The substrate surface etching device for integrated photonic / electronic devices as claimed in claim 5, characterized in that: The wafer material is one of lithium niobate, lithium tantalate, sapphire, silicon nitride, silicon carbide, aluminum nitride, gallium oxide, gallium nitride, gallium arsenide, gallium antimonide, indium phosphide, zinc oxide, and diamond.

7. The substrate surface etching device for integrated photonic / electronic devices as claimed in claim 5, characterized in that: The composite structure is one of lithium niobate on insulator, lithium tantalate on insulator, thin-film lithium niobate, and thin-film lithium tantalate.

8. The substrate surface etching device for integrated photonic / electronic devices according to claim 1, characterized in that: The thickness of the barrier layer is 10nm-500nm.

9. The substrate surface etching device for integrated photonic / electronic devices according to claim 1, characterized in that: The particle size of the micro-nano particles is 1 nm-100 μm.

10. The substrate surface etching device for integrated photonic / electronic devices according to any one of claims 1 to 9, characterized in that: The vibration direction of the sound waves generated by the sound wave generating device is perpendicular to the surface of the exposed area.

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