Detection processing device

By designing a detection and processing device including a base, a carrier table, an identification structure, a test structure, an elimination structure and a feeding structure, the problem of low detection and processing efficiency of GCT chips in the prior art is solved, and automated detection and processing are realized, efficiency is improved and error rate is reduced.

CN222914733UActive Publication Date: 2025-05-27北京怀柔实验室
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Patent Information

Application Number
CN202520610400.8
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-04-02
Publication Date
2025-05-27
Estimated Expiration
2035-04-02

AI Technical Summary

Technical Problem

In the prior art, the detection and processing efficiency of GCT chips is low, the manual operation efficiency is low, and the error rate is high, making it difficult to meet the needs of large-scale production.

Method used

A detection and processing device is designed, including a base, a carrier, an identification structure, a test structure, an expel structure and a feeding structure. Through the combination and coordinated work of these structures, automated detection and processing of power semiconductor chips are realized.

Benefits of technology

It improves the detection and processing efficiency of power semiconductor chips, reduces the error rate, and can meet the needs of large-scale production.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model provides a detection processing device, which is used for detecting and processing a power semiconductor chip, and comprises a base; the bearing platform is movably arranged on the base and is used for bearing the power semiconductor chip; the recognition structure is arranged on the base and provided with a recognition head, and the recognition head is located above the bearing table and used for recognizing the electrode structure; the testing structure is arranged on the base and provided with a testing head, and the testing head is located above the bearing table and used for testing the electrode structure; the removing structure is arranged on the base and provided with a removing head, and the removing head is located above the bearing table and used for removing the electrode structure from the chip base body; and the material applying structure is arranged on the base and is provided with a material applying head, and the material applying head is positioned above the bearing platform and is used for applying an insulating material on the chip substrate. According to the technical scheme, the problem that the efficiency of detecting and processing the chip is low in the prior art can be effectively solved.
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Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor detection and processing, and particularly relates to a detection and processing device. Background Technique

[0002] A GCT (gate commutated thyristor) chip is composed of thousands of small GCT cells, with a common anode, and the cathodes and gates are respectively connected in parallel. In the related art, as Figure 1 shown, the GCT chip usually adopts a structure in which rectangular comb-shaped cathode units are arranged radially in concentric rings. This design can effectively disperse the current during the switching process and avoid excessive current concentration. Since the GCT chip is a whole-wafer device, once a comb bar has a defect, it will not only affect the function of that comb bar, but may also spread through the parallel structure to affect the entire device, and even cause the entire GCT chip to fail, seriously reducing the yield and reliability of the GCT chip.

[0003] In the related art, the existing detection and processing methods for GCT chips usually need to be carried out manually by workers. First, the comb bars on the GCT chip are tested one by one through a chip electrical performance testing device, and the comb bars that do not meet the test standards are manually marked. Then, through a micro-workbench, a scalpel or other removal structure is used to remove these comb bars that do not meet the test standards. At present, there are as many as seven thousand comb bars on the surface of a six-inch GCT chip. The method of manual detection and processing has low efficiency and high error rate, and it is difficult to meet the requirements of large-scale production. Content of the Utility Model

[0004] The main purpose of the utility model is to provide a detection and processing device to solve the problem of low efficiency in detecting and processing chips in the related art.

[0005] To achieve the above purpose, the utility model provides a detection and processing device for detecting and processing power semiconductor chips. The power semiconductor chip includes a chip substrate and an electrode structure arranged on the chip substrate. The detection and processing device includes: a base; a carrier table movably arranged on the base and used for carrying the power semiconductor chip; an identification structure arranged on the base and having an identification head, the identification head being located above the carrier table and used for identifying the electrode structure; a testing structure arranged on the base and having a testing head, the testing head being located above the carrier table and used for testing the electrode structure; a removal structure arranged on the base and having a removal head, the removal head being located above the carrier table and used for removing the electrode structure from the chip substrate; a material application structure arranged on the base and having a material application head, the material application head being located above the carrier table and used for applying an insulating material on the chip substrate.

[0006] Further, the identification structure, the testing structure, the rejection structure, and the material application structure are sequentially arranged in the moving direction of the carrier table.

[0007] Further, the testing head includes a cathode probe and a gate probe. The carrier table is rotatably arranged on the base. The cathode probe, the gate probe, the identification structure, the rejection structure, and the material application structure are arranged at intervals along the circumferential direction of the carrier table.

[0008] Further, the testing structure further includes a mounting seat and a driving part. The testing head can be conductively matched with the electrode structure. The mounting end of the testing head is hinged to the mounting seat. The driving part is drivingly connected between the mounting seat and the testing head to drive the testing head to swing.

[0009] Further, the driving part includes a telescopic motor. The output shaft of the telescopic motor is hinged to the middle part of the testing head; and / or, the detection and processing device further includes a control structure. The control structure is signal-connected to the identification structure, the testing structure, the rejection structure, and the material application structure.

[0010] Further, the mounting seat includes a base seat, a moving seat, and a first lead screw. The first lead screw extends in the vertical direction and is connected to the base seat. The moving seat is arranged on the first lead screw and is connected to the testing head. Rotation of the first lead screw can drive the moving seat to move in the vertical direction.

[0011] Further, the moving seat further includes a base part, a moving block, and a second lead screw. The second lead screw extends in the horizontal direction and is connected to the base part. The moving block is arranged on the second lead screw and is connected to the testing head. Rotation of the second lead screw can drive the moving block to move in the horizontal direction.

[0012] Further, positioning bumps are arranged on the carrier table. The positioning bumps are in stop cooperation with the power semiconductor chip to position the power semiconductor chip; and / or, negative pressure suction nozzles are arranged on the carrier table. The negative pressure suction nozzles are used to connect with the power semiconductor chip.

[0013] Further, the rejection structure further includes a first support arm. The first end of the rejection head forms a rejection end. The second end of the rejection head is hinged to the first support arm to adjust the angle between the rejection end and the carrier table.

[0014] Further, the identification head includes an eyepiece, a switching turntable, and a plurality of objective lenses. The plurality of objective lenses are arranged on the switching turntable. The switching turntable is rotatably arranged. Rotation of the switching turntable makes one of the plurality of objective lenses match with the eyepiece.

[0015] Further, the material application structure includes a support seat and a second support arm. The second support arm is hinged to the support seat. The material application head is hinged to the second support arm.

[0016] Applying the technical solution of the present utility model, the base provides an installation foundation for other structures of the detection and processing device. The carrier table is movably arranged on the base and is used to carry the power semiconductor chip. The movable carrier table can move the power semiconductor chip and the structures on the power semiconductor chip to appropriate positions. The identification structure is arranged on the base. The identification structure has an identification head located above the carrier table. The identification head can identify the position of the electrode structure, thereby providing the position information of the electrode structure for other structures. The testing structure is arranged on the base. The testing structure has a testing head located above the carrier table. The testing structure can detect the electrode structure, thereby screening out the electrode structures that do not meet the testing standards. The rejection structure is arranged on the base. The rejection structure has a rejection head located above the carrier table. The rejection head can remove the electrode structures that do not meet the testing standards from the chip substrate, thereby preventing these electrode structures that do not meet the testing standards from affecting the overall performance of the power semiconductor chip. The material application structure is arranged on the base. The material application structure has a material application head located above the carrier table. After the electrode structures that do not meet the testing standards are removed from the chip substrate, a part of the chip substrate will be exposed. The material application head applies an insulating material to the exposed part, thereby ensuring the insulation performance of the power semiconductor chip. In this way, the staff can complete the detection and processing of the power semiconductor chip by using the detection and processing device, without having to perform each step manually, improving the work efficiency and reducing the error rate of detection and processing. Therefore, the technical solution of the present application can effectively solve the problem of low efficiency in detecting and processing chips in the related art. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The schematic diagrams in the specification forming a part of the present application are used to provide a further understanding of the present utility model. The schematic embodiments of the present utility model and their descriptions are used to explain the present utility model and do not constitute an improper limitation to the present utility model. In the drawings:

[0018] Figure 1 shows a top view schematic diagram of a power semiconductor chip in the related art;

[0019] Figure 2 A three-dimensional structure schematic diagram of an embodiment of the detection and processing device according to the present utility model;

[0020] Figure 3 shows Figure 1 a side view schematic diagram of the testing structure and the control structure of the detection and processing device of

[0021] Figure 4 shows Figure 3 a front view schematic diagram of a partial structure of the testing structure of

[0022] Figure 5 shows Figure 3Schematic side view of a partial structure of a test structure;

[0023] Figure 6 Shows Figure 1 Schematic top view of a carrier stage of a detection processing device;

[0024] Figure 7 Shows Figure 1 Schematic side view of an identification structure and a control structure of a detection processing device;

[0025] Figure 8 Shows Figure 1 Schematic side view of a rejection structure of a detection processing device;

[0026] Figure 9 Shows Figure 1 Schematic side view of a material application structure of a detection processing device.

[0027] Wherein, the above-mentioned drawings include the following reference numerals:

[0028] 1. Power semiconductor chip; 2. Chip substrate; 3. Electrode structure; 4. Cathode comb bar; 5. Gate ring;

[0029] 10. Base;

[0030] 20. Carrier stage; 21. Positioning bump; 22. Negative pressure suction nozzle;

[0031] 30. Identification structure; 31. Identification head; 311. Eyepiece; 312. Switching turntable; 313. Objective lens;

[0032] 40. Test structure; 41. Mounting base; 411. Substrate base; 412. Moving base; 4121. Substrate part; 4122. Moving block; 4123. Second lead screw; 413. First lead screw; 42. Test head; 421. Cathode probe; 422. Gate probe; 43. Driving part; 431. Telescopic motor;

[0033] 50. Rejection structure; 51. First support arm; 52. Rejection head;

[0034] 60. Material application structure; 61. Support base; 62. Second support arm; 63. Material application head;

[0035] 70. Control structure. Detailed implementation manners

[0036] The following will clearly and completely describe the technical solutions in the embodiments of the present utility model with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all of the embodiments. The description of at least one exemplary embodiment below is actually only illustrative and in no way limits the present utility model and its application or use. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without creative efforts shall fall within the scope of protection of the present utility model.

[0037] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0038] Unless otherwise specifically stated, the relative arrangements, numerical expressions, and numerical values of the components and steps set forth in these embodiments do not limit the scope of the present utility model. At the same time, it should be understood that, for the sake of convenience of description, the dimensions of the various parts shown in the drawings are not drawn in actual proportional relationships. Technologies, methods, and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, the said technologies, methods, and devices should be regarded as part of the specification. In all the examples shown and discussed herein, any specific value should be construed as merely exemplary and not as a limitation. Therefore, other examples of the exemplary embodiments may have different values. It should be noted that like reference numerals and letters denote like items in the following drawings, and thus, once an item is defined in one drawing, it does not need to be further discussed in subsequent drawings.

[0039] As Figures 2 to 9As shown in the figure, the present application provides a detection and processing device for detecting and processing a power semiconductor chip 1. The power semiconductor chip 1 includes a chip substrate 2 and an electrode structure 3 provided on the chip substrate 2. An embodiment of the detection and processing device of the present application includes: a base 10, a carrier 20, an identification structure 30, a test structure 40, a rejection structure 50, and a feeding structure 60; the carrier 20 is movably arranged on the base 10 and is used for carrying the power semiconductor chip 1; the identification structure 30 is arranged on the base 10 and has an identification head 31, the identification head 31 is located above the carrier 20 and is used for identifying the electrode structure 3; the test structure 40 is arranged on the base 10 and has a test head 42, the test head 42 is located above the carrier 20 and is used for testing the electrode structure 3; the rejection structure 50 is arranged on the base 10 and has a rejection head 52, the rejection head 52 is located above the carrier 20 and is used for removing the electrode structure 3 from the chip substrate 2; the feeding structure 60 is arranged on the base 10 and has a feeding head 63, the feeding head 63 is located above the carrier 20 and is used for applying an insulating material on the chip substrate 2.

[0040] Applying the technical solution of this embodiment, the base 10 provides an installation basis for other structures of the detection and processing device. The carrier 20 is movably arranged on the base 10 and is used for carrying the power semiconductor chip 1. The movable carrier 20 can move the power semiconductor chip 1 and the structures on the power semiconductor chip 1 to a suitable position. The identification structure 30 is arranged on the base 10. The identification structure 30 has an identification head 31 located above the carrier 20. The identification head 31 can identify the position of the electrode structure 3, so as to provide the position information of the electrode structure 3 for other structures; the test structure 40 is arranged on the base 10. The test structure 40 has a test head 42 located above the carrier 20. The test structure 40 can detect the electrode structure 3, so as to screen out the electrode structures 3 that do not meet the test standards; the rejection structure 50 is arranged on the base 10. The rejection structure 50 has a rejection head 52 located above the carrier 20. The rejection head 52 can remove the electrode structures 3 that do not meet the test standards from the chip substrate 2, so as to prevent these electrode structures 3 that do not meet the test standards from affecting the overall performance of the power semiconductor chip 1; the feeding structure 60 is arranged on the base 10. The feeding structure 60 has a feeding head 63 located above the carrier 20. After the electrode structures 3 that do not meet the test standards are removed from the chip substrate 2, a part of the chip substrate 2 will be exposed. The feeding head 63 applies an insulating material on the exposed part, so as to ensure the insulation performance of the power semiconductor chip 1. In this way, the staff can complete the detection and processing of the power semiconductor chip 1 by using the detection and processing device, without having to perform each step manually, improving the work efficiency and reducing the error rate of detection and processing. Therefore, the technical solution of this embodiment can effectively solve the problem of low efficiency in detecting and processing chips in the related art.

[0041] It should be noted that the phrase "the carrier stage 20 is movably disposed on the base 10" means that the carrier stage 20 can move in various ways such as translation or rotation, as long as it can move the power semiconductor chip 1 on the carrier stage 20 and the structures on the power semiconductor chip 1 to appropriate positions. In the related art, the electrode structure 3 of the power semiconductor chip 1 includes a cathode comb bar 4 and a gate ring 5.

[0042] As Figure 2 shown, the identification structure 30, the test structure 40, the rejection structure 50, and the feeding structure 60 are sequentially arranged in the moving direction of the carrier stage 20. With such an arrangement, as the carrier stage 20 moves in a preset direction, the power semiconductor chip 1 can be respectively located at the workstations cooperating with the identification structure 30, the test structure 40, the rejection structure 50, and the feeding structure 60, without the need for reverse movement, thereby improving the detection and processing efficiency of the detection and processing device.

[0043] As Figure 2 shown, the test head 42 includes a cathode probe 421 and a gate probe 422. The carrier stage 20 is rotatably disposed on the base 10. The cathode probe 421, the gate probe 422, the identification structure 30, the rejection structure 50, and the feeding structure 60 are arranged at intervals along the circumferential direction of the carrier stage 20. Specifically, the cathode probe 421 is used to test the cathode comb bar 4, and the gate probe 422 is used to test the gate ring 5. The above structures are arranged at intervals along the circumferential direction of the carrier stage 20, which can reduce the overall floor area of the detection and processing device and make the layout of each structure more reasonable. It should be noted that the "test head 42" used for description hereinafter refers to the specific structure of one of the cathode probe 421 and the gate probe 422. The specific structures of these two structures are similar, and one of them will be described in detail herein.

[0044] As Figures 3 to 5 shown, the test structure 40 further includes a mounting base 41 and a driving part 43. The test head 42 can be electrically connected and cooperate with the electrode structure 3. The mounting end of the test head 42 is hinged to the mounting base 41, and the driving part 43 is drivingly connected between the mounting base 41 and the test head 42 to drive the test head 42 to swing. Through the arrangement of the driving part 43, the test head 42 can adjust its angle by swinging. In this embodiment, the test head 42 swings in the vertical plane. In other embodiments, the test head can swing in the horizontal plane.

[0045] As Figures 3 to 5As shown, the driving part 43 includes a telescopic motor 431, and the output shaft of the telescopic motor 431 is hinged to the middle of the test head 42. Specifically, the telescopic motor 431 realizes the swinging of the test head 42 through the continuous telescoping of the output shaft. The telescopic motor 431 has the advantages of simple structure and reliable driving.

[0046] As Figure 3 and Figure 7 As shown, the detection and processing device further includes a control structure 70, and the control structure 70 is signal-connected to the identification structure 30, the test structure 40, the rejection structure 50, and the material application structure 60. Specifically, the control structure 70 is used to process relevant signals or send control signals.

[0047] As Figures 3 to 5 As shown, the mounting base 41 includes a base seat 411, a moving seat 412, and a first lead screw 413. The first lead screw 413 extends in the vertical direction and is connected to the base seat 411. The moving seat 412 is arranged on the first lead screw 413 and is connected to the test head 42. The rotation of the first lead screw 413 can drive the moving seat 412 to move in the vertical direction. Specifically, the staff can rotate the first lead screw 413, so that the moving seat 412 moves in the vertical direction, and then the test head 42 moves in the vertical direction, thereby adjusting the height of the test head 42.

[0048] As Figures 3 to 5 As shown, the moving seat 412 further includes a base part 4121, a moving block 4122, and a second lead screw 4123. The second lead screw 4123 extends in the horizontal direction and is connected to the base part 4121. The moving block 4122 is arranged on the second lead screw 4123 and is connected to the test head 42. The rotation of the second lead screw 4123 can drive the moving block 4122 to move in the horizontal direction. Specifically, the staff can rotate the second lead screw 4123, so that the moving seat 412 moves in the horizontal direction, and then the test head 42 moves in the horizontal direction, thereby adjusting the distance between the test head 42 and the carrier 20.

[0049] As Figure 2 and Figure 6 As shown, positioning bumps 21 are arranged on the carrier 20, and the positioning bumps 21 are in stop cooperation with the power semiconductor chip 1 to position the power semiconductor chip 1. Specifically, there are multiple positioning bumps 21, and all the multiple positioning bumps 21 can be in stop cooperation with the power semiconductor chip 1, so that the power semiconductor chip 1 is located at a suitable position on the carrier 20.

[0050] As Figure 2 and Figure 6As shown, a negative pressure suction nozzle 22 is provided on the carrier table 20, and the negative pressure suction nozzle 22 is used to connect with the power semiconductor chip 1. Specifically, the negative pressure suction nozzle 22 enables the power semiconductor chip 1 to be stably carried on the carrier table 20 through negative pressure suction, thereby avoiding the situation that the power semiconductor chip 1 runs or deviates during the movement of the carrier table 20.

[0051] As Figure 2 and Figure 8 shown, the rejection structure 50 further includes a first support arm 51. The first end of the rejection head 52 forms a rejection end, and the second end of the rejection head 52 is hingedly connected to the first support arm 51 to adjust the angle between the rejection end and the carrier table 20. Specifically, the staff adjusts the swinging angle of the rejection head 52, thereby adjusting the angle between the rejection end and the carrier table 20, so as to ensure that the rejection end shovels off the cathode comb bar 4 at an appropriate angle, thereby ensuring the rejection angle of the rejection head 52 for the cathode comb bar 4.

[0052] As Figure 2 and Figure 7 shown, the recognition head 31 includes an eyepiece 311, a switching turntable 312, and a plurality of objective lenses 313. The plurality of objective lenses 313 are arranged on the switching turntable 312, and the switching turntable 312 is rotatably arranged. The rotation of the switching turntable 312 enables one of the plurality of objective lenses 313 to be matched with the eyepiece 311. Specifically, the plurality of objective lenses 313 are objective lenses with different magnifications. When facing power semiconductor chips 1 of different models, by adjusting different objective lenses 313 to be matched with the eyepiece 311, the electrode structures 3 of power semiconductor chips 1 of different models can be effectively recognized, improving the versatility of the detection and processing device.

[0053] As Figure 2 and Figure 9 shown, the material application structure 60 includes a support base 61 and a second support arm 62. The second support arm 62 is hingedly connected to the support base 61, and the material application head 63 is hingedly connected to the second support arm 62. Specifically, the staff can adjust the overall height of the material application head 63 through the hinge point between the second support arm 62 and the support base 61. Also, since the material application angle of the material application head 63 needs to always be vertically downward, after adjusting the overall height of the material application head 63, the material application angle of the material application head 63 is always kept vertically downward through the hinge point between the material application head 63 and the second support arm 62.

[0054] The specific implementation method of the detection and processing device in this embodiment is as follows:

[0055] First, place the power semiconductor chip 1 to be tested on the carrier table 20, with the edge of the power semiconductor chip 1 abutting against the positioning bump 21, and then turn on the negative pressure suction nozzle 22 to vacuum-adsorb and fix the power semiconductor chip 1 on the carrier table 20.

[0056] Secondly, the electrode structure 3 to be detected on the surface of the power semiconductor chip 1 is identified by the recognition head 31 (which can be a CCD microscope). First, the CCD microscope is used to globally scan the surface topography of the power semiconductor chip 1, a coordinate system is established, the cathode comb 4 and the gate ring 5 to be detected on the surface of the power semiconductor chip 1 are identified, and their positions are recorded.

[0057] Secondly, the gate probe 422 is connected to the control structure 70, the cathode probe 421 is connected to the control structure 70, and the control structure 70 outputs a voltage of -20V to prepare for the reverse bias voltage test of the gate cathode.

[0058] Secondly, the reverse bias voltage test of the gate cathode is carried out. The control structure 70 reads the previously recorded position coordinates of the cathode comb 4 and the gate ring 5, controls the movement of the carrier 20, so that the cathode comb 4 to be detected is located below the cathode probe 421, and the gate ring 5 is located below the gate probe 422.

[0059] Secondly, the cathode probe 421 and the gate probe 422 are respectively conducted with the cathode comb 4 and the gate ring 5, the control structure 70 outputs and receives test signals, and the cathode comb 4 with a leakage current greater than 100 mA is determined as the cathode comb 4 that does not meet the test standard. The control structure 70 records its coordinate position; if the test result is less than 100 mA, it is determined that the reverse blocking function of the cathode comb 4 is normal.

[0060] Secondly, after the detection of one cathode comb 4 is completed, the above operations are repeated until all the cathode combs 4 are tested.

[0061] Secondly, according to the detection results, the cathode combs 4 that do not meet the test standard are screened out, and their coordinate positions are recorded. According to the coordinate positions recorded by the control structure 70, the movement of the carrier 20 is controlled, so that the removal end of the removal head 52 contacts the cathode comb 4 that does not meet the test standard, and the removal of the cathode comb 4 that does not meet the test standard is completed. The above steps are repeated until all the cathode combs 4 that do not meet the test standard are removed.

[0062] Finally, after the removal operation of all the cathode combs 4 that do not meet the test standard is completed, according to the coordinate positions recorded by the control structure 70, the movement of the carrier 20 is controlled, so that the part of the removed cathode comb 4 is located below the application head 63, then the switch is turned on, and polyimide is drop-coated on the surface of the chip substrate 2 to complete the insulation treatment. The above steps are repeated until the insulation treatment of all the parts of the removed cathode combs 4 is completed.

[0063] In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by orientation words such as "front, rear, upper, lower, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom", etc. is usually based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present utility model and simplifying the description. Without contrary description, these orientation words do not indicate and imply that the device or component referred to must have a specific orientation or be constructed and operated in a specific orientation. Therefore, it should not be construed as a limitation on the protection scope of the present utility model; the orientation words "inside, outside" refer to the inside and outside relative to the contour of each component itself.

[0064] For the convenience of description, spatial relative terms such as "above...", "over...", "on the upper surface of...", "upper...", etc. can be used here to describe the spatial positional relationship between a device or feature shown in the drawings and other devices or features. It should be understood that the spatial relative terms are intended to include different orientations in use or operation in addition to the orientation described in the drawings for the device. For example, if the device in the drawing is inverted, the device described as "above other devices or structures" or "over other devices or structures" will then be positioned as "below other devices or structures" or "under other devices or structures". Thus, the exemplary term "above..." can include both the orientations of "above..." and "below...". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and corresponding interpretations should be made for the spatial relative descriptions used here.

[0065] In addition, it should be noted that the use of words such as "first", "second", etc. to limit the components is only for the convenience of distinguishing the corresponding components. Without additional statement, the above words have no special meaning. Therefore, it should not be construed as a limitation on the protection scope of the present utility model.

[0066] The above are only the preferred embodiments of the present utility model and are not used to limit the present utility model. For those skilled in the art, the present utility model can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model shall be included within the protection scope of the present utility model.

Claims

1. A detection and processing device for detecting and processing a power semiconductor chip (1), the power semiconductor chip (1) comprising a chip substrate (2) and an electrode structure (3) arranged on the chip substrate (2), characterized in that: The detection processing device comprises: Base (10); A carrier platform (20) movably disposed on the base (10) and used for carrying the power semiconductor chip (1); An identification structure (30) is arranged on the base (10) and has an identification head (31), wherein the identification head (31) is located above the carrier platform (20) and is used to identify the electrode structure (3); A test structure (40) is arranged on the base (10) and has a test head (42), wherein the test head (42) is located above the support platform (20) and is used to test the electrode structure (3); a removal structure (50), arranged on a base (10) and having a removal head (52), wherein the removal head (52) is located above the carrier platform (20) and is used to remove the electrode structure (3) from the chip substrate (2); A material application structure (60) is arranged on a base (10) and has a material application head (63); the material application head (63) is located above the carrier platform (20) and is used to apply insulating material to the chip substrate (2).

2. The detection processing device according to claim 1, characterized in that: The identification structure (30), the testing structure (40), the rejection structure (50), and the material application structure (60) are arranged in sequence in the moving direction of the supporting platform (20).

3. The detection processing device according to claim 2, characterized in that: The test head (42) comprises a cathode probe (421) and a gate probe (422); the carrier platform (20) is rotatably arranged on the base (10); the cathode probe (421), the gate probe (422), the identification structure (30), the rejection structure (50) and the feeding structure (60) are arranged at intervals along the circumferential direction of the carrier platform (20).

4. The detection processing device according to claim 1, characterized in that: The test structure (40) further comprises a mounting seat (41) and a driving unit (43); the test head (42) is capable of conducting and cooperating with the electrode structure (3); a mounting end of the test head (42) is hingedly connected to the mounting seat (41); and the driving unit (43) is drivingly connected between the mounting seat (41) and the test head (42) to drive the test head (42) to swing.

5. The detection processing device according to claim 4, characterized in that: The driving part (43) comprises a telescopic motor (431), the output shaft of the telescopic motor (431) being hingedly connected to the middle part of the test head (42); and / or, The detection and processing device further comprises a control structure (70), wherein the control structure (70) is signal-connected to the identification structure (30), the test structure (40), the rejection structure (50), and the material application structure (60).

6. The detection processing device according to claim 4, characterized in that: The mounting seat (41) comprises a base seat (411), a movable seat (412) and a first screw rod (413); the first screw rod (413) extends in a vertical direction and is connected to the base seat (411); the movable seat (412) is arranged on the first screw rod (413) and is connected to the test head (42); the first screw rod (413) can drive the movable seat (412) to move in the vertical direction when it rotates.

7. The detection processing device according to claim 6, characterized in that: The movable seat (412) further comprises a base portion (4121), a movable block (4122) and a second screw rod (4123), wherein the second screw rod (4123) extends in a transverse direction and is connected to the base portion (4121), and the movable block (4122) is arranged on the second screw rod (4123) and is connected to the test head (42), and the rotation of the second screw rod (4123) can drive the movable block (4122) to move in the transverse direction.

8. The detection processing device according to any one of claims 1 to 7, characterized in that: The carrier platform (20) is provided with a positioning protrusion (21), and the positioning protrusion (21) cooperates with a stopper of the power semiconductor chip (1) to position the power semiconductor chip (1); and / or, A negative pressure suction nozzle (22) is provided on the carrier platform (20), and the negative pressure suction nozzle (22) is used to be connected to the power semiconductor chip (1).

9. The detection processing device according to any one of claims 1 to 7, characterized in that: The rejection structure (50) further comprises a first support arm (51), the first end of the rejection head (52) forms a rejection end, and the second end of the rejection head (52) is hingedly connected to the first support arm (51) to adjust the angle between the rejection end and the supporting platform (20).

10. The detection processing device according to any one of claims 1 to 7, characterized in that: The identification head (31) comprises an eyepiece (311), a switching turntable (312), and a plurality of objective lenses (313); the plurality of objective lenses (313) are arranged on the switching turntable (312); the switching turntable (312) is rotatably arranged; the switching turntable (312) rotates so that one of the plurality of objective lenses (313) matches the eyepiece (311).

11. The detection processing device according to any one of claims 1 to 7, characterized in that: The material application structure (60) comprises a support base (61) and a second support arm (62), the second support arm (62) being hingedly connected to the support base (61), and the material application head (63) being hingedly connected to the second support arm (62).