PECVD (plasma enhanced chemical vapor deposition) silicon wafer coating device
By designing the electric push rod and grab mechanism of the PECVD silicon wafer coating device, the mechanized movement and lifting of the silicon wafer bearing mechanism is realized, which solves the problem of high-temperature waste heat affecting the pick-up of silicon wafers and improves operational safety and convenience.
Patent Information
- Application Number
- CN202422069866.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-26
- Publication Date
- 2025-06-03
- Estimated Expiration
- 2034-08-26
AI Technical Summary
In the PECVD silicon wafer coating process, high temperature waste heat affects the handling of silicon wafers, resulting in safety hazards and inconvenient operation.
A PECVD silicon wafer coating device is designed, using electric push rods and grab mechanisms to achieve up and down movement and overall lifting of the silicon wafer bearing mechanism through the mechanical structure of the movable plate and the lifting ring, avoiding direct contact with high-temperature areas.
It effectively avoids the silicon wafer being scalded under high temperature conditions, simplifies the removal process, improves the operation safety and convenience, and improves the applicability of the device.
Smart Images
Figure CN222935511U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of silicon wafer coating, in particular to a PECVD silicon wafer coating device. Background Technique
[0002] PECVD silicon wafer coating is a technology for depositing thin films on the surface of silicon wafers. The thin films deposited by PECVD have excellent electrical properties, good substrate adhesion and excellent step coverage. Due to these advantages, it has a wide range of applications in the fields of very large scale integrated circuits, optoelectronic devices and MEMS, etc. A highly efficient silicon nitride antireflection film is evenly coated on the surface of the silicon wafer to reduce the reflection loss of light, enhance the light absorption ability of the battery chip and improve the battery efficiency.
[0003] In the coating process, the silicon wafer is usually placed stably in the furnace tube through a loading component. When the environment in the tube meets the requirements of the coating process, a certain proportion of specific gas is released into the furnace tube through a gas pipe, and the gas reacts to form silicon nitride and adheres to the surface of the silicon wafer. However, when the operation is over, there is still high-temperature waste heat, which affects the operation of taking the silicon wafer.
[0004] Therefore, we propose a PECVD silicon wafer coating device to solve the problems raised above. Content of the Utility Model
[0005] 1. Technical problems to be solved by the utility model:
[0006] The purpose of the utility model is to provide a PECVD silicon wafer coating device to solve the problems in the current market proposed in the above background technique.
[0007] 2. Technical solution:
[0008] To achieve the above purpose, the utility model provides the following technical solution: a PECVD silicon wafer coating device, including a bottom plate, a furnace body is fixedly installed above the middle of the bottom plate, and a silicon wafer loading mechanism is placed inside the furnace body;
[0009] Electric push rods are installed on both the left and right sides of the furnace body above the bottom plate, telescopic rods are installed on both the front and back sides of the furnace body above the bottom plate, and the output ends of the electric push rods and the movable ends of the telescopic rods are jointly fixed with a movable plate, and a grasping mechanism is installed at the lower end of the movable plate. The electric push rod drives the silicon wafer loading mechanism to move up and down through the grasping mechanism.
[0010] Further, the silicon wafer carrier mechanism includes a number of first carriers evenly distributed at equal intervals up and down and a second carrier located below the first carriers. Three first vertical rods and one second vertical rod are fixedly arranged inside the side of the second carrier, and the first vertical rods are slidably arranged in a vertically attached manner inside the side of the first carriers, and a rotating cylinder is sleeved on the outer side of the second vertical rod in a threaded manner, and the rotating cylinders are arranged in one-to-one correspondence with the first carriers, and at the same time, the rotating cylinders are rotatably installed inside the first carriers.
[0011] Through the above technical solution, when the rotating cylinder is rotated, the first carrier can be driven to move up and down.
[0012] Further, a limiting ring is fixedly sleeved on the outer side of the middle of the rotating cylinder, and the outer diameter of the limiting ring is larger than the outer diameter of the rotating cylinder.
[0013] Through the above technical solution, the rotating cylinder can rotate inside the first carrier.
[0014] Further, lifting rings are fixedly installed at the upper ends of the first vertical rod and the second vertical rod.
[0015] Through the above technical solution, it is convenient to lift the entire silicon wafer carrier mechanism through the lifting rings.
[0016] Further, the grasping mechanism includes a fixing frame fixed to the lower end of the movable plate. A rotating rod is elastically rotatably installed at the lower end of the fixing frame, and an "O"-shaped through groove is formed between the fixing frame and the rotating rod, and the width of the lower part of the rotating rod is smaller than the width of the upper part of the rotating rod.
[0017] Through the above technical solution, when the rotating rod moves downward, it can rotate under the action of the lifting ring.
[0018] Further, the grasping mechanisms are distributed in one-to-one correspondence with the lifting rings.
[0019] Through the above technical solution, the electric push rod can lift the silicon wafer carrier mechanism through the grasping mechanism.
[0020] 3. Beneficial effects:
[0021] Adopting the technical solution provided by the present invention, compared with the prior art, the PECVD silicon wafer coating device of the present invention, through the cooperation of the grasping mechanism and the lifting ring, enables the electric push rod to take out the silicon wafer carrier mechanism to avoid scalding. The specific content is as follows:
[0022] When the coating of the silicon wafer on the furnace body is completed and it needs to be taken out, first open the furnace lid, and then start the electric push rod. The electric push rod drives the movable plate to move downward. During the downward movement of the movable plate, the grasping mechanism is driven to move downward synchronously. When the rotating rod fits onto the hanging ring and continues to move downward, the rotating rod will rotate on the fixed frame until the upper end of the hanging ring is inside the through groove and does not obstruct the rotating rod. Then, under the elastic action, the rotating rod rotates in the reverse direction and fits onto the fixed frame. Then, reverse-start the electric push rod to drive the grasping mechanism to move upward through the movable plate. The grasping mechanism can drive the silicon wafer bearing mechanism to move upward as a whole through the hanging ring, driving the silicon wafer bearing mechanism out of the furnace body to avoid scalding.
[0023] When the rotating cylinder is rotated, since the rotating cylinder is threadedly sleeved on the outside of the second vertical rod, under the guiding action of the first vertical rod, the rotating cylinder can drive the first bearing frame to move up and down after rotation, and thus the distance between the first bearing frames can be adjusted, so as to facilitate corresponding adjustment according to the required space during actual silicon wafer coating, improving applicability. Brief Description of the Drawings
[0024] Figure 1 It is a schematic perspective side view of the whole of the present utility model;
[0025] Figure 2 It is a schematic perspective side view of the silicon wafer bearing mechanism of the present utility model;
[0026] Figure 3 It is a schematic perspective side view of the rotating cylinder of the present utility model;
[0027] Figure 4 It is a schematic perspective side view of the movable plate of the present utility model;
[0028] Figure 5 For the present utility model Figure 4 The enlarged schematic view of part A in it.
[0029] In the figure: 1, bottom plate; 2, furnace body; 3, silicon wafer bearing mechanism; 31, first bearing frame; 32, first vertical rod; 33, second vertical rod; 34, hanging ring; 35, rotating cylinder; 351, limiting ring; 36, second bearing frame; 4, electric push rod; 5, telescopic rod; 6, movable plate; 7, grasping mechanism; 71, fixed frame; 72, rotating rod; 73, through groove. Detailed Description of the Embodiment
[0030] To facilitate the understanding of the present utility model, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all of the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present utility model.
[0031] In the description of the present utility model, it should be understood that the orientation or positional relationship indicated by terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "page", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation to the present utility model.
[0032] In addition, the terms "first" and "second" are only used for descriptive purposes and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present utility model, the meaning of "a plurality" is two or more, unless otherwise specifically defined.
[0033] In the present utility model, unless otherwise clearly specified and limited, terms such as "installed", "connected", "connected to", "fixed", "provided with", etc. should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances. Embodiment
[0034] Please refer to Figures 1-5 , a PECVD silicon wafer coating device, comprising a bottom plate 1. Above the middle of the bottom plate 1, a furnace body 2 is fixedly installed, and a silicon wafer carrying mechanism 3 is placed inside the furnace body 2; on both the left and right sides of the furnace body 2 above the bottom plate 1, electric push rods 4 are installed, and on both the front and rear sides of the furnace body 2 above the bottom plate 1, telescopic rods 5 are installed. The output ends of the electric push rods 4 and the movable ends of the telescopic rods 5 are jointly fixed with a movable plate 6. A grasping mechanism 7 is installed at the lower end of the movable plate 6. The electric push rod 4 drives the silicon wafer carrying mechanism 3 to move up and down through the grasping mechanism 7; the grasping mechanism 7 includes a fixed frame 71 fixed to the lower end of the movable plate 6. A rotating rod 72 is elastically rotatably installed at the lower end of the fixed frame 71, and an "O"-shaped through groove 73 is formed between the fixed frame 71 and the rotating rod 72. The width of the lower part of the rotating rod 72 is smaller than the width of the upper part of the rotating rod 72; the grasping mechanisms 7 and the hanging rings 34 are distributed in one-to-one correspondence;
[0035] When the coating of the silicon wafer on the furnace body 2 is completed and it needs to be taken out, first open the furnace cover (not shown in the figure), then start the electric push rod 4. When the electric push rod 4 drives the movable plate 6 to move downward, during the downward movement of the movable plate 6, the grasping mechanism 7 is driven to move downward synchronously. When the rotating rod 72 fits against the lifting ring 34 and continues to move downward, the rotating rod 72 will rotate on the fixed frame 71 until the upper end of the lifting ring 34 is located inside the through groove 73 and does not block the rotating rod 72. Then, under the elastic action, the rotating rod 72 rotates in the reverse direction and fits against the fixed frame 71. Then, reverse-start the electric push rod 4, drive the grasping mechanism 7 to move upward through the movable plate 6, and the grasping mechanism 7 can drive the silicon wafer carrying mechanism 3 to move upward as a whole through the lifting ring 34, driving the silicon wafer carrying mechanism 3 out of the furnace body 2 to avoid scalding;
[0036] The silicon wafer carrying mechanism 3 includes a plurality of first carrying frames 31 distributed at equal intervals up and down and a second carrying frame 36 located below the first carrying frames 31. Three first vertical rods 32 and one second vertical rod 33 are fixedly installed inside the side of the second carrying frame 36. The first vertical rods 32 are slidably arranged in a fitting manner up and down inside the side of the first carrying frame 31. A rotating cylinder 35 is threadedly sleeved on the outer side of the second vertical rod 33. The rotating cylinders 35 are arranged in one-to-one correspondence with the first carrying frames 31. At the same time, the rotating cylinders 35 are rotatably installed inside the first carrying frames 31. A limiting ring 351 is fixedly sleeved on the outer side of the middle part of the rotating cylinder 35, and the outer diameter of the limiting ring 351 is larger than the outer diameter of the rotating cylinder 35. The upper ends of the first vertical rods 32 and the second vertical rod 33 are fixedly installed with lifting rings 34;
[0037] When the rotating cylinder 35 is rotated, since the rotating cylinder 35 is threadedly sleeved on the outer side of the second vertical rod 33, under the guiding action of the first vertical rod 32, the rotating cylinder 35 can drive the first carrying frame 31 to move up and down after rotation, so as to adjust the distance between the first carrying frames 31, thereby facilitating corresponding adjustment according to the required space during actual silicon wafer coating and improving applicability.
[0038] Working principle: When using this PECVD silicon wafer coating device, as Figures 1-5 shown, when it is necessary to make corresponding adjustments according to the required space during actual silicon wafer coating, rotate the rotating cylinder 35. Since the rotating cylinder 35 is threadedly sleeved on the outer side of the second vertical rod 33, under the guiding action of the first vertical rod 32, drive the first carrying frame 31 to move up and down, adjust the distance between the first carrying frames 31, and improve applicability. When the coating of the silicon wafer on the furnace body 2 is completed and it needs to be taken out, open the furnace cover (not shown in the figure), then start the electric push rod 4, drive the grasping mechanism 7 to move downward synchronously, so that the lifting ring 34 is sleeved inside the through groove 73, and then reverse-start the electric push rod 4, drive the silicon wafer carrying mechanism 3 to move upward as a whole through the grasping mechanism 7, and take it out of the furnace body 2 to avoid scalding.
[0039] The content not described in detail in this specification belongs to the prior art well-known to those skilled in the art.
[0040] Although the present utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or perform equivalent replacements on some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present utility model shall be included within the protection scope of the present utility model.
Claims
1. A PECVD silicon wafer coating device, characterized in that: It comprises a bottom plate (1), a furnace body (2) is fixedly mounted above the middle of the bottom plate (1), and a silicon wafer carrying mechanism (3) is placed inside the furnace body (2); Electric push rods (4) are installed above the bottom plate (1) on both the left and right sides of the furnace body (2), and telescopic rods (5) are installed above the bottom plate (1) on both the front and rear sides of the furnace body (2), and a movable plate (6) is fixed to the output end of the electric push rod (4) and the movable end of the telescopic rod (5), and a gripping mechanism (7) is installed at the lower end of the movable plate (6), and the electric push rod (4) drives the silicon wafer carrying mechanism (3) to move up and down through the gripping mechanism (7).
2. A PECVD silicon wafer coating device according to claim 1, characterized in that: The silicon wafer supporting mechanism (3) comprises a plurality of supporting frames (31) distributed at equal intervals in the upper and lower parts and a supporting frame (36) located below the supporting frame (31), three vertical rods (32) and one vertical rod (33) are fixed inside the side of the supporting frame (36), and the vertical rod (32) is slidably arranged inside the side of the supporting frame (31) in an upward and downward manner, and a rotating cylinder (35) is provided on the outer thread sleeve of the vertical rod (33), and the rotating cylinder (35) is arranged one-to-one with the supporting frame (31), and the rotating cylinder (35) is rotatably installed inside the supporting frame (31).
3. A PECVD silicon wafer coating device according to claim 2, characterized in that: A limiting ring (351) is provided on the fixed sleeve outside the middle part of the rotating cylinder (35), and the outer diameter of the limiting ring (351) is greater than the outer diameter of the rotating cylinder (35).
4. The PECVD silicon wafer coating device according to claim 2, characterized in that: A lifting ring (34) is fixedly mounted on the upper ends of the vertical rod 1 (32) and the vertical rod 2 (33).
5. The PECVD silicon wafer coating device according to claim 1, characterized in that: The grabbing mechanism (7) comprises a fixing frame (71) fixed to the lower end of the movable plate (6), a rotating rod (72) being elastically rotatably mounted on the lower end of the fixing frame (71), an "O"-shaped through groove (73) being formed between the fixing frame (71) and the rotating rod (72), and a lower width of the rotating rod (72) being smaller than an upper width of the rotating rod (72).
6. The PECVD silicon wafer coating device according to claim 1, characterized in that: The grabbing mechanisms (7) are distributed in a one-to-one correspondence with the lifting rings (34).