Surrounding type integrated power semiconductor module
By adopting a surround integrated power semiconductor module in the thermal management system of new energy vehicles, the problem of large space occupation and low integration on the PCB board is solved, and more efficient heat dissipation and higher integration are achieved.
Patent Information
- Application Number
- CN202422004318.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-16
- Publication Date
- 2025-06-13
- Estimated Expiration
- 2034-08-16
AI Technical Summary
The existing new energy vehicle thermal management system occupies a large amount of space on the PCB board and has low integration, resulting in low heat dissipation capacity.
The surround-shaped integrated power semiconductor module is adopted, including a ring DBC board, a heating control module and a cooling control module. Through the uniform distribution of the ring-shaped installation area and the power chip, the volume is reduced and the heat dissipation area is expanded.
Significantly reduces the module size, improves heat dissipation performance, enhances integration and reduces material and manufacturing costs.
Smart Images
Figure CN222980508U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductors, and particularly to an annular integrated power semiconductor module. Background Art
[0002] A power semiconductor module generally consists of two or more power chips electrically connected to a copper-clad ceramic substrate (DCB), and is sealed in an insulating housing with plastic encapsulation or a protective material such as silicone gel, thereby realizing a module with the functions of semiconductor discrete devices. The power semiconductor module can achieve different functions according to different encapsulated power chips or components.
[0003] In the new energy vehicle thermal management system, a power semiconductor module is also used to achieve the functions of refrigeration and heating. Currently, to achieve the functions of refrigeration and heating in the new energy vehicle thermal management system, IGBT discrete devices with a traditional TO-247 package shape are used to control the refrigeration system and the heating system respectively. For the air conditioner heating PTC, mainly 2 to 5 IGBT power single tubes are used to control the heating elements to form an in-vehicle PTC heating system, and the IGBT single tubes mainly use IGBT devices with a traditional TO-247 package shape; for the air conditioner refrigeration electric compressor AC, mainly 6 IGBT power single tubes are used to form a three-phase full-bridge circuit, and a drive control board is used to convert the high-voltage direct current of the battery into alternating current through three-phase full-bridge switching control to achieve the refrigeration operation of the turbo compressor, and the IGBT single tubes mainly use IGBT devices with a traditional TO-247 package. The circuit diagrams of the refrigeration system and the heating system of new energy vehicles are respectively as Figure 1a and Figure 1b shown.
[0004] In the traditional new energy vehicle thermal management system, refrigeration and heating need to be controlled by being arranged on different PCB control boards, which occupies a large space on the PCB board, has a low integration level, high material and manufacturing costs, and at the same time, using TO single-tube discrete devices for combined control will result in low heat dissipation capacity of the entire system.
[0005] In the process of implementing the present utility model, the inventor found that there are at least the following problems in the prior art:
[0006] The existing new energy vehicle thermal management system occupies a large space on the PCB board and has a low integration level. Summary of the Utility Model
[0007] The purpose of the present utility model is to provide an annular integrated power semiconductor module to solve the technical problems that the existing new energy vehicle thermal management system occupies a large space on the PCB board and has a low integration level. The many technical effects that can be produced by the preferred technical solutions provided by the present utility model are described in detail below.
[0008] To achieve the above object, the present utility model provides the following technical solutions:
[0009] A surrounding integrated power semiconductor module provided by the present utility model includes an annular DBC board, a heating control module, and a refrigeration control module;
[0010] The first metal layer of the annular DBC board includes a first installation area and a second installation area, and both the first installation area and the second installation area are annularly arranged;
[0011] The heating control module and the refrigeration control module are correspondingly arranged on the first installation area and the second installation area.
[0012] Optionally, the heating control module includes a heating power input module and a plurality of heating power output modules;
[0013] The first installation area includes a heating power input area and a plurality of heating power output areas distributed annularly, and the heating power input module and the plurality of heating power output modules are correspondingly arranged on the heating power input area and the plurality of heating power output areas.
[0014] Optionally, the heating power input area includes a first heating chip connection area and a first heating power terminal connection area; the first heating chip connection area is located on the outer circle of the first heating power terminal connection area;
[0015] The heating power input module includes a P+ input terminal, a first heating power chip, a first control terminal, a first negative terminal, and a PH output terminal; the P+ input terminal and the first heating power chip are arranged on the first heating chip connection area, and the first control terminal, the first negative terminal, and the PH output terminal are all arranged on the first heating power terminal connection area;
[0016] Each heating power output area includes a second heating chip connection area and a second heating power terminal connection area; the second heating chip connection area is located on the outer circle of the second heating power terminal connection area;
[0017] Each heating power output module includes a PTC input terminal, a second heating power chip, a second control terminal, a second negative terminal, and an NPTC output terminal; the PTC input terminal and the second heating power chip are arranged on the second heating chip connection area, and the second control terminal, the second negative terminal, and the NPTC output terminal are arranged on the second heating power terminal connection area.
[0018] Optionally, the P+ input terminal, the first control terminal, the first negative terminal, the PH output terminal, the PTC input terminal, the second control terminal, the second negative terminal, and the NPTC output terminal are all dumbbell-shaped power terminals; the inside of the dumbbell-shaped power terminal is hollow.
[0019] Optionally, the refrigeration control module includes three refrigeration power modules; the second installation area includes three refrigeration power areas distributed in a ring, and the three refrigeration power modules are correspondingly arranged on the three refrigeration power areas to form a three-phase full-bridge module.
[0020] Optionally, each refrigeration power module includes a first refrigeration power chip, a second refrigeration power chip, a power input pin, a negative pin, a first control pin, a second control pin, and a power output terminal;
[0021] Each refrigeration power area includes a first refrigeration power chip area, a second refrigeration power chip area, and a pin area. The first refrigeration power chip and the power input pin are arranged on the first refrigeration power chip area, the second refrigeration power chip and the power output terminal are arranged on the second refrigeration power chip area, and the negative pin, the first control pin, and the second control pin are arranged on the pin area;
[0022] The pin area is located on the periphery of the first refrigeration power chip area and the second refrigeration power chip area.
[0023] Optionally, the shapes of the power input pin, the negative pin, the first control pin, and the second control pin are Z-shaped, S-shaped, pin-shaped, or tile-shaped.
[0024] Optionally, the power semiconductor module further includes a thermistor area, and the thermistor area is arranged at the center of the annular DBC board.
[0025] Optionally, the annular DBC board further includes an insulating layer and a second metal layer. The insulating layer is arranged between the first metal layer and the second metal layer, and a plurality of stress holes are arranged on the second metal layer.
[0026] Optionally, the outside of the power semiconductor module is encapsulated with silicone gel or epoxy resin.
[0027] Implementing one of the above technical solutions of the present utility model has the following advantages or beneficial effects:
[0028] In this embodiment, the heating control module and the cooling control module are arranged on the first installation area and the second installation area of the annular DBC board, which can significantly reduce the volume. Moreover, each power chip in the heating control module and the cooling control module is evenly distributed on the annular DBC board, and the generated heat is also evenly distributed, which can expand the heat dissipation area and improve the heat dissipation performance. Description of the Drawings
[0029] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following will briefly introduce the drawings required for the description of the embodiments. Obviously, the following drawings are only some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings. In the drawings:
[0030] Figure 1a is the circuit diagram of the existing new energy vehicle refrigeration system;
[0031] Figure 1b is the circuit diagram of the existing new energy vehicle heating system;
[0032] Figure 2 is the overall structure schematic diagram of the embodiment of the present invention;
[0033] Figure 3 is the connection schematic diagram of the heating control module and the cooling control module and the annular DBC board in the embodiment of the present invention;
[0034] Figure 4 is the first perspective schematic diagram of the annular DBC board of the embodiment of the present invention;
[0035] Figure 5 is the second perspective schematic diagram of the annular DBC board of the embodiment of the present invention;
[0036] Figure 6 is the structural split schematic diagram of the dumbbell-shaped power terminal in the embodiment of the present invention;
[0037] Figure 7 is the structural schematic diagram after encapsulation with silicone gel in the embodiment of the present invention.
[0038] In the figure: 1. Ring-shaped DBC board; 11. First installation area; 111. First heating chip connection area; 112. First control terminal connection area; 113. First negative terminal connection area; 114. PH output terminal connection area; 115. Second heating chip connection area; 116. Second control terminal connection area; 117. Second negative terminal connection area; 118. NPTC output terminal connection area; 12. Second installation area; 121. First refrigeration power chip area; 122. Second refrigeration power chip area; 123. Negative electrode pin area; 124. First control pin area; 125. Second control pin area; 13. Thermistor area; 14. Insulating layer; 15. Second metal layer; 151. Stress hole; 2. Heating control module; 21. Heating power input module; 211. P+ input terminal; 212. First heating power chip; 213. First control terminal; 214. First negative terminal; 215. PH output terminal; 22. Heating power output module; 221. PTC input terminal; 222. Second heating power chip; 223. Second control terminal; 224. Second negative terminal; 225. NPTC output terminal; 3. Refrigeration control module; 31. First refrigeration power chip; 32. Second refrigeration power chip; 33. Power input pin; 34. Negative electrode pin; 35. First control pin; 36. Second control pin; 37. Power output terminal; 4. Bonding wire; 5. Dumbbell-shaped power terminal; 51. Disassembly end; 6. Silicone gel. Detailed implementation manners
[0039] In order to make the objectives, technical solutions and advantages of the present utility model clearer and more understandable, various exemplary embodiments to be described below will refer to the corresponding drawings, which form a part of the exemplary embodiments and describe various exemplary embodiments that may be adopted to implement the present utility model. Unless otherwise indicated, the same numbers in different drawings represent the same or similar elements. The implementation manners described in the following exemplary embodiments do not represent all implementation manners consistent with the present disclosure. It should be understood that they are merely examples of processes, methods, devices, etc. consistent with some aspects of the present utility model disclosed in detail in the appended claims. Other embodiments may also be used, or structural and functional modifications may be made to the embodiments listed herein without departing from the scope and essence of the present utility model.
[0040] In the description of the present utility model, it should be understood that the terms "center", "longitudinal", "transverse", etc. indicate the orientation or positional relationship based on the drawings shown, and are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the elements referred to must have a specific orientation, be constructed and operated in a specific orientation. The terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. The meaning of the term "plurality" is two or more. The terms "connected" and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, an integral connection, a mechanical connection, an electrical connection, a communication connection, a direct connection, an indirect connection through an intermediate medium, and can be the communication inside two elements or the interaction relationship between two elements. The term "and / or" includes any and all combinations of one or more of the related listed items. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.
[0041] In order to illustrate the technical solution described in the present utility model, the following will be illustrated by specific embodiments, and only the parts related to the embodiments of the present utility model are shown.
[0042] Embodiment:
[0043] As Figures 2 - 4 shown, the present utility model provides an annular integrated power semiconductor module, which includes an annular DBC board 1, a heating control module 2 and a cooling control module 3; the first metal layer of the annular DBC board 1 includes a first installation area 11 and a second installation area 12, and both the first installation area 11 and the second installation area 12 are annularly arranged; the heating control module 2 and the cooling control module 3 are correspondingly arranged on the first installation area 11 and the second installation area 12.
[0044] Specifically, the heating control module 2 and the cooling control module 3 in this embodiment are both arranged on the annular DBC board 1. As Figure 2As shown in the figure, the first metal layer on the annular DBC board 1 includes a first installation area 11 and a second installation area 12 arranged in a ring shape, which facilitates the setting of the heating control module 2 and the refrigeration control module, and at the same time facilitates the realization of the heating function and the refrigeration function. It should be noted that there are two positional relationships between the first installation area 11 and the second installation area 12. The first is that the first installation area 11 is located in the inner circle of the second installation area 12; the second is that the second installation area 12 is located in the inner circle of the first installation area 11. However, no matter how the positions of the first installation area 11 and the second installation area 12 are set, the heating control module 2 and the refrigeration control module 3 need to be correspondingly set on the first installation area 11 and the second installation area 12, and the heating control module 2 and the refrigeration control module 3 will not affect each other's work. In this embodiment, the case where the first installation area 11 is located in the inner circle of the second installation area 12 is used to illustrate this embodiment in detail. In this embodiment, the heating control module 2 and the refrigeration control module 3 are arranged on the annular DBC board 1. Due to the eddy current effect of the current, eddy currents are formed at the geometric centers of the current inductances in each current loop area of the power semiconductor module, and they can cancel and weaken each other, effectively reducing the stray inductance and improving the module performance.
[0045] In this embodiment, the heating control module 2 and the refrigeration control module 3 are arranged on the first installation area 11 and the second installation area 12 of the annular DBC board 1, which can significantly reduce the volume; and each power chip in the heating control module 2 and the refrigeration control module 3 is evenly distributed on the annular DBC board 1, and the generated heat is also evenly distributed, which can expand the heat dissipation area and improve the heat dissipation performance. That is, when any power module is working, it can utilize the heat dissipation resources of the other power module to improve the heat dissipation performance.
[0046] Next, in combination with Figures 2 - 4 , the technical solution of this embodiment will be described in detail.
[0047] The first installation area 11 is located in the inner circle of the second installation area 12, and the heating control module 2 is arranged on the first installation area 11. The heating control module 2 includes a heating power input module 21 and multiple heating power output modules 22. The first installation area 11 includes a heating power input area and multiple heating power output areas distributed in a ring shape. The heating power input module 21 and the multiple heating power output modules 22 are correspondingly arranged on the heating power input area and the multiple heating power output areas. In this embodiment, there are multiple heating power output modules 22. For the convenience of explanation in combination with the drawings, Figure 2 and Figure 3 show two heating power output modules 22.
[0048] As Figure 4As shown, the heating power input area includes a first heating chip connection area 111 and a first heating power terminal connection area, and the first heating chip connection area 111 is arranged on the periphery of the first heating power terminal connection area. The heating power input module 21 includes a P+ input terminal 211, a first heating power chip 212, a first control terminal 213, a first negative terminal 214, and a PH output terminal 215. As Figure 3 shown, the P+ input terminal 211 and the first heating power chip 212 are arranged on the first heating chip connection area 111, and the first control terminal 213, the first negative terminal 214, and the PH output terminal 215 are all arranged on the first heating power terminal connection area. The first heating power terminal connection area includes a first control terminal connection area 112, a first negative terminal connection area 113, and a PH output terminal connection area 114. The first control terminal 213, the first negative terminal 214, and the PH output terminal 215 are respectively arranged on the first control terminal connection area 112, the first negative terminal connection area 113, and the PH output terminal connection area 114. The first heating power chip 212 is connected to the first control terminal connection area 112, the first negative terminal connection area 113, and the PH output terminal connection area 114 through a bonding wire 4 (aluminum wire, copper wire, etc. can be selected) or a metal strip (aluminum strip, copper strip, etc.) to be connected to the first control terminal 213, the first negative terminal 214, and the PH output terminal 215 for power output.
[0049] As Figure 4 shown, each heating power output area includes a second heating chip connection area 115 and a second heating power terminal connection area; and the second heating chip connection area 115 is arranged on the periphery of the second heating power terminal connection area. Each heating power output module 22 includes a PTC input terminal 221, a second heating power chip 222, a second control terminal 223, a second negative terminal 224, and an NPTC output terminal 225; the PTC input terminal 221 and the second heating power chip 222 are arranged on the second heating chip connection area 115, and the second control terminal 223, the second negative terminal 224, and the NPTC output terminal 225 are arranged on the second heating power terminal connection area. The second heating power terminal connection area includes a second control terminal connection area 116, a second negative terminal connection area 117, and an NPTC output terminal connection area 118, as Figure 3As shown, the second control terminal 223, the second negative terminal 224, and the NPTC output terminal 225 are respectively disposed on the second control terminal connection area 116, the second negative terminal connection area 117, and the NPTC output terminal connection area 118. The second heating power chip 222 is connected to the second control terminal connection area 116, the second negative terminal connection area 117, and the NPTC output terminal connection area 118 through bonding wires 4 (aluminum wires, copper wires, etc. can be selected) or metal strips (aluminum strips, copper strips, etc.) to be connected to the second control terminal 223, the second negative terminal 224, and the NPTC output terminal 225 for power output. It should be noted that the position distributions of the respective connection areas in the heating power input area and the cooling power output area are the same. The first heating chip connection area 111, the first heating power terminal connection area, the second heating chip connection area 115, and the second heating power terminal connection area are all power copper layers on the first installation area 11.
[0050] The working principle of the heating control module 2 is as follows: The P+ input terminal 211 of the heating power input module 21 is connected to an external power supply. When the external power supply is turned on, current is input from the P+ input terminal 211, flows through the first heating power chip 212, and then is output outward from the PH output terminal 215. The PH output terminal 215 is electrically connected to the corresponding PCT heating sheet through an external PCB board. The other end of the PCT heating sheet is respectively connected to the PTC input terminals 221 in a plurality of heating power output modules 22 through an external PCB board, and then returns to the negative power supply through the second heating power chip 222 and the NPTC output terminal 225, thereby realizing the heating function of the heating control module 2.
[0051] As Figure 2 and Figure 3 As shown, the second installation area 12 is located on the outer ring of the second installation area 12, and the cooling control module is disposed on the second installation area 12. The cooling control module 3 includes three cooling power modules; the second installation area 12 includes three cooling power areas distributed in a ring shape, and the three cooling power modules are correspondingly disposed on the three cooling power areas for forming a three-phase full-bridge module. The power output terminals 37 in the three cooling power modules are respectively a U power terminal, a V power terminal, and a W power terminal.
[0052] As Figure 3As shown in the figure, each refrigeration power module includes a first refrigeration power chip 31, a second refrigeration power chip 32, a power input pin 33, a negative pin 34, a first control pin 35, a second control pin 36, and a power output terminal 37; each refrigeration power area includes a first refrigeration power chip area 121, a second refrigeration power chip area 122, and a pin area. The first refrigeration power chip 31 and the power input pin 33 are arranged on the first refrigeration power chip area 121, the second refrigeration power chip 32 and the power output terminal 37 are arranged on the second refrigeration power chip area 122, and the negative pin 34, the first control pin 35, and the second control pin 36 are arranged on the pin area; the pin area is located on the periphery of the first refrigeration power chip area 121 and the second refrigeration power chip area 122. It should be noted that the first refrigeration power chip area 121, the second refrigeration power chip area 122, and the pin area are all power copper layers on the first mounting area 11. The negative pin 34, the first control pin 35, the second control pin 36, and the power input pin 33 are all located at the outermost edge of the second mounting area 12.
[0053] Specifically, as Figure 4 shown in the figure, the pin area includes a negative pin area 123, a first control pin area 124, and a second control pin area 125. The first refrigeration power chip 31 and the power input pin 33 are arranged on the first refrigeration power chip area 121, the second refrigeration power chip 32 and the power output terminal 37 are arranged on the second refrigeration power chip area 122, the negative pin 34 is arranged on the negative pin area 123, the first control pin 35 is arranged on the first control pin area 124, and the second control pin 36 is arranged on the second control pin area 125. The first refrigeration power chip 31 is respectively connected to the first control pin area 124 and the second refrigeration power chip area 122 through a bonding wire 4 (aluminum wire, copper wire, etc. can be selected) or a metal strip (aluminum strip, copper strip, etc.), and the second refrigeration power chip 32 is respectively connected to the negative pin area 123 and the second control pin area 125 through a bonding wire 4 (aluminum wire, copper wire, etc. can be selected) or a metal strip (aluminum strip, copper strip, etc.).
[0054] The working principle of the refrigeration power module is as follows: The power input pin 33 is connected to an external power supply. When the external power supply is turned on, the current flows in from the power input pin 33, then flows through the first refrigeration power chip 31 and the second refrigeration power chip 32, and then flows out from the power output terminal 37, realizing the function of a three-phase full-bridge circuit. The corresponding inverter output outputs three-phase currents of U, V, and W from the power output terminal 37 in the corresponding refrigeration power module. The U power terminal, the V power terminal, and the W power terminal are controlled by an AC control motor through an external PCB board to realize the function of AC control refrigeration.
[0055] It should be noted that the three refrigeration power modules in this embodiment are evenly arranged on the second installation area 12 of the annular DBC board 1. Therefore, when the power semiconductor module is installed on the PCB board or other related terminal applications, only any one of the power input pins 33 needs to be connected to the input of the external power supply, and no other calibration work needs to be carried out, saving procedures and reducing the error tolerance of the terminal application.
[0056] As an optional implementation manner, the P+ input terminal 211, the first control terminal 213, the first negative terminal 214, the PH output terminal 215, the PTC input terminal 221, the second control terminal 223, the second negative terminal 224, and the NPTC output terminal 225 are all dumbbell-shaped power terminals. In this embodiment, in order to ensure that the heating control module 2 can be connected to the corresponding circuit / model interface on the external PCB board, the terminals used in the heating control module 2 are selected as dumbbell-shaped power terminals 5 with wide ends and a narrow middle. Selecting the dumbbell-shaped power terminals can enhance the connection stability between each terminal and the power module, and as long as the power semiconductor module can be aligned with the corresponding position, it can ensure its normal connection with the external PCB board circuit. Moreover, since the dumbbell-shaped power terminal 5 is columnar, its stability is better than that of the traditional pin-shaped power terminal, and it is not easily damaged during installation or when working in a high-vibration environment, improving the reliability and lifespan of the entire power semiconductor module.
[0057] In this embodiment, the power input pin 33, the negative pin 34, the second control pin 36, the second control pin 36, and the power output terminal 37 in the refrigeration power module can also be selected as dumbbell-shaped power terminals during actual use, and the specific selection is based on the actual usage situation and requirements.
[0058] It should be noted that the dumbbell-shaped power terminal 5 in this embodiment can be an integral structure or a detachable structure. When the dumbbell-shaped power terminal 5 is an integral structure, the power semiconductor module only needs to be welded or bonded to the corresponding position on the PCB board through solder and / or solder pads. When the dumbbell-shaped power terminal 5 is detachable, one end of the power terminal away from the chip is the detachable end 51, as Figure 6 shown, and its detachable method can be threaded connection or riveting, which is not specifically limited in this embodiment. Moreover, due to the skin effect of the current, in order to reduce the resistance in power transmission and lower power loss, the middle part of the dumbbell-shaped power terminal 5 in this embodiment is hollow. The dumbbell-shaped power terminal 5 can be cylindrical or square-columnar, and the specific selection can be made according to actual needs.
[0059] In this embodiment, multiple pins in the refrigeration power module are taken as an example of dumbbell-shaped power terminals 5. When the dumbbell-shaped power terminal 5 is detachable, the PCB board needs to pass through the thin part of the dumbbell-shaped power terminal 5, and after being connected to the detachable end, it is fixed on the PCB board. In this case, the power input pin 33, the negative pin 34, the second control pin 36, and the second control pin 36 in the refrigeration power module need to use the detachable dumbbell-shaped power terminal 5. And, in this case, the U power terminal, the V power terminal, and the W power terminal in the refrigeration power module can be in the shape of a quadrangular prism or a cylinder. In order to illustrate in more detail in this embodiment, two different dumbbell-shaped power terminals 5 are shown, but the dumbbell-shaped power terminals in this solution are preferably cylindrical.
[0060] As an alternative embodiment, the shapes of the power input pin 33, the negative pin 34, the first control pin 35, and the second control pin 36 are Z-shaped, S-shaped, pin-shaped, or tile-shaped. The specific shape of the pin to be used can be selected or replaced according to the actual situation.
[0061] As Figure 3 shown, the power semiconductor module further includes a thermistor area 13, and the thermistor area 13 is arranged at the center of the annular DBC board 1. Since the heating control module 2 and the refrigeration control module 3 are arranged in a surrounding shape on the annular DBC board 1, the heat generated when the power semiconductor module is working can be evenly distributed, so that the thermistor at the center can accurately sense and feedback to the external circuit through the power terminal, and the external circuit can timely and accurately feedback the heat condition of the power semiconductor module when it is working. At the same time, it also enables the external PCB control circuit to perform more precise control, further improving the reliability of the power semiconductor module.
[0062] As an alternative embodiment, as Figure 5 shown, the annular DBC board 1 further includes an insulating layer 14 and a second metal layer 15. The insulating layer 14 is arranged between the first metal layer and the second metal layer 15, and a plurality of stress holes 151 are arranged on the second metal layer 15. Stress holes 151 are provided on the annular DBC board 1, and these stress holes 151 can effectively reduce the thermal stress caused by the extension of the power copper layer during the welding manufacture or high-temperature operation of the power semiconductor module, thereby causing the chip to crack, and can improve the performance, service life, and reliability of the device.
[0063] As an alternative embodiment, as Figure 7 shown, the outside of the power semiconductor module is encapsulated with silicone gel 6 or epoxy resin. After the power semiconductor module is encapsulated with silicone gel 6, epoxy resin, or other encapsulating resin materials, the thickness of the encapsulation body shall not exceed the height of the terminals and pins in the power semiconductor, and the preferred thickness of the encapsulation is 1 / 2 - 4 / 5 of the height of the terminals and / or pins.
[0064] The embodiments are only special cases and do not indicate that the present utility model has only such an implementation mode.
[0065] The above are only the preferred embodiments of the present utility model. Those skilled in the art know that without departing from the spirit and scope of the present utility model, various changes or equivalent substitutions can be made to these features and embodiments. Additionally, under the teaching of the present utility model, these features and embodiments can be modified to adapt to specific situations and materials without departing from the spirit and scope of the present utility model. Therefore, the present utility model is not limited by the specific embodiments disclosed herein, and all embodiments falling within the scope of the claims of this application belong to the protection scope of the present utility model.
Claims
1. A wrap-around integrated power semiconductor module, characterized in that: It comprises an annular DBC plate (1), a heating control module (2) and a cooling control module (3); The first metal layer of the annular DBC plate (1) comprises a first mounting area (11) and a second mounting area (12), and the first mounting area (11) and the second mounting area (12) are both arranged in an annular shape; The heating control module (2) and the cooling control module (3) are arranged on the first installation area (11) and the second installation area (12) respectively.
2. The wraparound integrated power semiconductor module according to claim 1, characterized in that: The heating control module (2) comprises a heating power input module (21) and a plurality of heating power output modules (22); The first installation area (11) comprises a heating power input area and a plurality of heating power output areas which are distributed in an annular manner, and the heating power input module (21) and the plurality of heating power output modules (22) are arranged in a one-to-one correspondence on the heating power input area and the plurality of heating power output areas.
3. The wraparound integrated power semiconductor module according to claim 2, characterized in that: The heating power input area comprises a first heating chip connection area (111) and a first heating power terminal connection area; the first heating chip connection area (111) is located at the outer circle of the first heating power terminal connection area; The heating power input module (21) comprises a P+ input terminal (211), a first heating power chip (212), a first control terminal (213), a first negative terminal (214) and a PH output terminal (215); the P+ input terminal (211) and the first heating power chip (212) are arranged on the first heating chip connection area (111), and the first control terminal (213), the first negative terminal (214) and the PH output terminal (215) are all arranged on the first heating power terminal connection area; Each of the heating power output areas comprises a second heating chip connection area (115) and a second heating power terminal connection area; the second heating chip connection area (115) is located at the outer circle of the second heating power terminal connection area; Each of the heating power output modules (22) comprises a PTC input terminal (221), a second heating power chip (222), a second control terminal (223), a second negative terminal (224) and a NPTC output terminal (225); the PTC input terminal (221) and the second heating power chip (222) are arranged on the second heating chip connection area (115), and the second control terminal (223), the second negative terminal (224) and the NPTC output terminal (225) are arranged on the second heating power terminal connection area.
4. The wraparound integrated power semiconductor module according to claim 3, characterized in that: The P+ input terminal (211), the first control terminal (213), the first negative terminal (214), the PH output terminal (215), the PTC input terminal (221), the second control terminal (223), the second negative terminal (224), and the NPTC output terminal (225) are all dumbbell-shaped power terminals (5); the dumbbell-shaped power terminal (5) is configured to be hollow inside.
5. The wraparound integrated power semiconductor module according to claim 1, characterized in that: The refrigeration control module (3) includes three refrigeration power modules; the second installation area (12) includes three refrigeration power zones distributed in a ring shape, and the three refrigeration power modules are arranged in a one-to-one correspondence on the three refrigeration power zones to form a three-phase full-bridge module.
6. The wraparound integrated power semiconductor module according to claim 5, characterized in that: Each of the refrigeration power modules comprises a first refrigeration power chip (31), a second refrigeration power chip (32), a power input pin (33), a negative electrode pin (34), a first control pin (35), a second control pin (36) and a power output terminal (37); Each of the refrigeration power zones comprises a first refrigeration power chip zone (121), a second refrigeration power chip zone (122) and a pin zone, the first refrigeration power chip (31) and the power input pin (33) are arranged on the first refrigeration power chip zone (121), the second refrigeration power chip (32) and the power output terminal (37) are arranged on the second refrigeration power chip zone (122), and the negative electrode pin (34), the first control pin (35) and the second control pin (36) are arranged on the pin zone; The pin area is located outside the first refrigeration power chip area (121) and the second refrigeration power chip area (122).
7. The wraparound integrated power semiconductor module according to claim 6, characterized in that: The power input pin (33), the negative electrode pin (34), the first control pin (35) and the second control pin (36) are in the shape of a Z-shape, an S-shape, a pin-shape or a tile-shape.
8. The wraparound integrated power semiconductor module according to claim 1, characterized in that: The power semiconductor module further comprises a thermistor region (13), wherein the thermistor region (13) is arranged at the center of the annular DBC plate (1).
9. The wraparound integrated power semiconductor module according to claim 1, characterized in that: The annular DBC plate (1) further comprises an insulating layer (14) and a second metal layer (15); the insulating layer (14) is arranged between the first metal layer and the second metal layer (15); and a plurality of stress holes (151) are arranged on the second metal layer (15).
10. The wraparound integrated power semiconductor module according to any one of claims 1 to 9, characterized in that: The exterior of the power semiconductor module is packaged with silicone gel or epoxy resin.