Physical vapor deposition device convenient to cool
By designing multiple process chambers and cooling chambers in a physical vapor deposition device, the deposition process of aluminum or aluminum alloy is completed in steps, and cooling is carried out after each step, the problems of excessive wafer temperature and high debris rate are solved, and more efficient cooling and reduction of the breakage rate are achieved.
Patent Information
- Application Number
- CN202422096696.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-27
- Publication Date
- 2025-06-17
- Estimated Expiration
- 2034-08-27
AI Technical Summary
In semiconductor manufacturing processes, the process time of physical vapor deposition of aluminum or aluminum alloy is too long, resulting in too high wafer temperature and a wafer is adhered to the slide stage, which in turn leads to an increase in wafer fragmentation rate.
A physical vapor deposition device for easy cooling is designed, including multiple process chambers and cooling chambers, and the deposition process of thicker metals is completed in steps and cooled after each step is completed to ensure that the wafer can fully cool down after each deposition.
Through step-by-step deposition and multiple cooling, the chance of wafer adhering to the slide stage is effectively reduced, the wafer breakage rate is reduced, and the wafer cooling efficiency is improved.
Smart Images
Figure CN222990199U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of physical vapor deposition devices, and particularly relates to a physical vapor deposition device convenient for cooling. Background Art
[0002] In the semiconductor manufacturing process, in the top layer metal or other special places, it is usually necessary to deposit relatively thick aluminum or aluminum alloy to meet the needs of the process or device. The common method for manufacturing aluminum and aluminum alloy is physical vapor deposition. During the physical vapor deposition process, since the plasma bombards the target while also bombarding the wafer, it will cause the temperature of the wafer to rise. Therefore, when depositing relatively thick aluminum or aluminum alloy, too long deposition time will cause the wafer temperature to be too high, resulting in the wafer being adhered to the carrier stage, and then increasing the wafer fragmentation rate. Therefore, a solution is needed to improve the cooling effect of the wafer during deposition, prevent the wafer from being adhered to the carrier stage, reduce the probability of wafer adhesion, and thus reduce the wafer breakage rate. Summary of the Utility Model
[0003] Therefore, the utility model provides a physical vapor deposition device convenient for cooling to solve the problem that in the prior art, the process time for physical vapor deposition of aluminum or aluminum alloy is too long, resulting in too high wafer temperature, the wafer being adhered to the carrier stage, and then increasing the wafer fragmentation rate.
[0004] The utility model provides a physical vapor deposition device convenient for cooling, which is used for physical vapor deposition of aluminum-containing metal on a semiconductor substrate, and is characterized by at least including:
[0005] A transfer cavity, the transfer cavity is a hollow multi-prism with multiple sides, and at least one corresponding delivery channel is arranged on each side of the transfer cavity;
[0006] A first process cavity, located outside the first side of the transfer cavity, and connected to the first side of the transfer cavity through the delivery channel; the first process cavity is adapted to perform a first deposition step to preliminarily deposit aluminum-containing metal on the semiconductor substrate;
[0007] A first cooling cavity, located outside the third side of the transfer cavity, and connected to the third side of the transfer cavity through the delivery channel; a cooling device is arranged inside the first cooling cavity; the first cooling cavity is adapted to perform a first cooling step on the semiconductor substrate after preliminary deposition to reduce the temperature of the semiconductor substrate to room temperature;
[0008] The second process chamber is located outside the second side of the transfer chamber and is connected to the second side of the transfer chamber through the transfer channel; the first process chamber is adapted to perform a second deposition step to secondarily deposit an aluminum-containing metal on the semiconductor substrate.
[0009] The second cooling chamber is located outside the fourth side of the transfer chamber and is connected to the fourth side of the transfer chamber through the transfer channel; a cooling device is provided inside the second cooling chamber; the second cooling chamber is adapted to perform a second cooling step on the semiconductor substrate after the secondary deposition to reduce the temperature of the semiconductor substrate to room temperature.
[0010] Optionally, the surface of the first process chamber facing the transfer chamber is parallel to the first side of the transfer chamber, and the surface of the second process chamber facing the transfer chamber is parallel to the second side of the transfer chamber.
[0011] Optionally, the surface of the first cooling chamber facing the transfer chamber is parallel to the third side of the transfer chamber, and the surface of the second cooling chamber facing the transfer chamber is parallel to the fourth side of the transfer chamber.
[0012] Optionally, the cooling device includes a cooling chamber wafer stage, a cooling gas input pipeline, and a cooling gas output pipeline.
[0013] The cooling chamber wafer stage includes an upper cooling stage and a cooling stage bracket located below the cooling stage; the cooling stage bracket is cylindrical and perpendicular to the cooling stage; the cooling stage is adapted to place the semiconductor substrate.
[0014] The cooling gas input pipeline and the cooling gas output pipeline are provided inside the stage bracket.
[0015] Optionally, a deposition device is provided inside the first process chamber and the second process chamber, and the deposition device includes a deposition chamber wafer stage.
[0016] The deposition chamber wafer stage includes an upper deposition stage and a deposition stage bracket located below the deposition stage; the deposition stage bracket is cylindrical and perpendicular to the deposition stage; the deposition stage is adapted to place the semiconductor substrate.
[0017] Optionally, a transfer module is provided inside the transfer chamber, and the transfer module includes a robotic arm, a telescopic assembly, and a control assembly; the transfer module is adapted to transfer the semiconductor substrate from the surface of the deposition stage to the surface of the cooling stage.
[0018] The robotic arm is U-shaped.
[0019] The telescopic component is a telescopic cylinder;
[0020] A control chip is provided inside the control component.
[0021] Optionally, the control component is disposed on the upper surface inside the transfer cavity and is connected to the first end of the telescopic component;
[0022] The robotic arm is connected to the second end of the telescopic component;
[0023] The control component is adapted to control the movement of the robotic arm through the telescopic component and control the state of the robotic arm to transfer the semiconductor substrate from the first process cavity to the first cooling cavity through the transfer channel.
[0024] Optionally, a vacuum pump is connected to the bottom surface of the transfer cavity;
[0025] Vacuum pumps are also provided on the side of the first process cavity, the second process cavity, the first cooling cavity, and the second cooling cavity that is on the same side as the bottom surface of the transfer cavity;
[0026] An exhaust valve is provided on the side of the vacuum pump.
[0027] Optionally, a transfer valve is provided on the transfer channel.
[0028] Optionally, the height of the cooling stage bracket is 10 cm - 30 cm.
[0029] The technical solution of the present utility model has the following advantages:
[0030] First, by providing multiple process cavities and completing the physical vapor deposition process of thick aluminum or aluminum alloy step by step, the thickness of a single deposition is reduced, effectively reducing the probability of wafer sticking. Second, through multiple depositions in multiple process cavities, the contact points between the wafer and the carrier stage will not be fixed at the same point. When the second deposition step is performed in the second process cavity, the first process cavity can also be fully cooled, further preventing the wafer from being adhered to the carrier stage. Third, by transferring the wafer to the cooling cavity for cooling after each deposition step, the wafer can be fully cooled; after cooling is completed, it is transferred to another process cavity to start the next deposition step. Thus, the wafer can be transferred into the cooling cavity for cooling before being adhered to the carrier stage, ensuring that the wafer is fully cooled before the next deposition step, preventing the wafer from being adhered to the carrier stage, reducing the probability of wafer adhesion, and further reducing the wafer breakage rate. Description of the Drawings
[0031] To more clearly illustrate the specific embodiments of the present invention or the technical solutions in the prior art, the following will briefly introduce the drawings required for the description of the specific embodiments or the prior art. Obviously, the drawings in the following description are some embodiments of the present invention. For those of ordinary skill in the art, without creative efforts, other drawings can also be obtained based on these drawings.
[0032] Figure 1 Structural schematic diagram of a physical vapor deposition device facilitating cooling according to an embodiment of the present invention;
[0033] Figure 2 Structural schematic diagram of a cooling device according to an embodiment of the present invention;
[0034] Figure 3 Structural schematic diagram of a wafer stage of a cooling cavity according to an embodiment of the present invention;
[0035] Figure 4 Structural schematic diagram of another wafer stage of a cooling cavity according to an embodiment of the present invention;
[0036] Figure 5 Structural schematic diagram of a deposition device according to an embodiment of the present invention;
[0037] Figure 6 Top view of the structural schematic diagram of a transfer module according to an embodiment of the present invention;
[0038] Figure 7 Structural schematic diagram of a robotic arm for transferring wafers according to an embodiment of the present invention.
[0039] Explanation of reference numerals:
[0040] 10 - Transfer cavity 10; 20 - Delivery channel; 30 - First process cavity; 40 - First cooling cavity; 50 - Second process cavity; 60 - Second cooling cavity; 100 - Cooling device; 110 - Wafer stage of the cooling cavity; 120 - Cooling gas input pipeline; 130 - Cooling gas output pipeline; 101 - Cooling stage; 102 - Cooling stage bracket; 200 - Deposition device; 210 - Wafer stage of the deposition cavity; 201 - Deposition stage; 202 - Deposition stage bracket; 300 - Transfer module; 310 - Robotic arm; 320 - Telescopic assembly; 330 - Control assembly; 400 - Semiconductor substrate. Detailed embodiments
[0041] To solve the problem that in the prior art, the process time of physical vapor deposition of aluminum or aluminum alloy is too long, resulting in too high a temperature of the wafer, the wafer being adhered to the carrier stage, and thus an increase in the wafer fragmentation rate, the present utility model provides a physical vapor deposition device facilitating cooling, which is used for physical vapor deposition of aluminum-containing metal on a semiconductor substrate. It is characterized in that it at least includes: a transfer cavity, the transfer cavity being a hollow multi-prism with a plurality of side faces, and at least one corresponding delivery channel being provided on each side face of the transfer cavity; a first process cavity, located outside the first side face of the transfer cavity and connected to the first side face of the transfer cavity through the delivery channel; the first process cavity being adapted to perform a first deposition step to preliminarily deposit aluminum-containing metal on the semiconductor substrate; a first cooling cavity, located outside the third side face of the transfer cavity and connected to the third side face of the transfer cavity through the delivery channel; a cooling device being provided inside the first cooling cavity; the first cooling cavity being adapted to perform a first cooling step on the semiconductor substrate after preliminary deposition to lower the temperature of the semiconductor substrate to room temperature; a second process cavity, located outside the second side face of the transfer cavity and connected to the second side face of the transfer cavity through the delivery channel; the first process cavity being adapted to perform a second deposition step to secondarily deposit aluminum-containing metal on the semiconductor substrate; a second cooling cavity, located outside the fourth side face of the transfer cavity and connected to the fourth side face of the transfer cavity through the delivery channel; a cooling device being provided inside the second cooling cavity; the second cooling cavity being adapted to perform a second cooling step on the semiconductor substrate after secondary deposition to lower the temperature of the semiconductor substrate to room temperature.
[0042] The technical solution of the present utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are some but not all of the embodiments of the present utility model. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present utility model without making creative efforts shall fall within the protection scope of the present utility model. In the description of the present utility model, it should be noted that the terms "first", "second", and "third" are only used for descriptive purposes and cannot be construed as indicating or implying relative importance.
[0043] Refer to Figure 1 , this embodiment provides a physical vapor deposition device facilitating cooling, which is used for physical vapor deposition of aluminum-containing metal on a semiconductor substrate 400. It is characterized in that it at least includes:
[0044] A transfer cavity 10, the transfer cavity 10 being a hollow multi-prism with a plurality of side faces, and at least one corresponding delivery channel 20 being provided on each side face of the transfer cavity 10;
[0045] The first process chamber 30 is located outside the first side surface of the transfer chamber 10 and is connected to the first side surface of the transfer chamber 10 through the transfer channel 20. The first process chamber 30 is adapted to perform a first deposition step to preliminarily deposit an aluminum-containing metal on the semiconductor substrate 400.
[0046] The first cooling chamber 40 is located outside the third side surface of the transfer chamber 10 and is connected to the third side surface of the transfer chamber 10 through the transfer channel 20. A cooling device 100 is provided inside the first cooling chamber 40. The first cooling chamber 40 is adapted to perform a first cooling step on the semiconductor substrate 400 after preliminary deposition to reduce the temperature of the semiconductor substrate 400 to room temperature.
[0047] The second process chamber 50 is located outside the second side surface of the transfer chamber 10 and is connected to the second side surface of the transfer chamber 10 through the transfer channel 20. The second process chamber 50 is adapted to perform a second deposition step to secondarily deposit an aluminum-containing metal on the semiconductor substrate 400.
[0048] The second cooling chamber 60 is located outside the fourth side surface of the transfer chamber 10 and is connected to the fourth side surface of the transfer chamber 10 through the transfer channel 20. A cooling device 100 is provided inside the second cooling chamber 60. The second cooling chamber 60 is adapted to perform a second cooling step on the semiconductor substrate 400 after secondary deposition to reduce the temperature of the semiconductor substrate 400 to room temperature.
[0049] In specific implementation, the semiconductor substrate is a wafer. When a relatively thick aluminum or aluminum alloy layer needs to be deposited on the wafer, in order to avoid excessive temperature, it is divided into multiple deposition steps. First, the wafer is placed in the first process chamber 30 to perform the first deposition step to preliminarily deposit an aluminum metal layer or an aluminum alloy layer on the wafer. Then, the wafer is transferred to the first cooling chamber 40 to perform the first cooling step to reduce the temperature of the wafer to room temperature. Next, the wafer is transferred to the second process chamber 50 to perform the second deposition step to secondarily deposit an aluminum metal layer or an aluminum alloy layer on the wafer. Finally, the wafer is transferred to the second cooling chamber 60 to perform the second cooling step to reduce the temperature of the wafer to room temperature.
[0050] This solution completes the physical vapor deposition process of thick aluminum or aluminum alloy in steps by setting multiple process chambers, reducing the thickness of each deposition, and effectively reducing the probability of wafer sticking. Through multiple depositions in multiple process chambers, the contact points between the wafer and the carrier stage will not be fixed at the same point. When the second deposition step is carried out in the second process chamber, the first process chamber can be fully cooled, further preventing the wafer from being adhered to the carrier stage. By transporting the wafer to the cooling chamber for cooling after each deposition step, the wafer can be fully cooled; after cooling is completed, it is transported to another process chamber to start the next deposition step. Thus, the wafer can be transported into the cooling chamber for cooling before being adhered to the carrier stage, ensuring that the wafer is fully cooled before the next deposition step, preventing the wafer from being adhered to the carrier stage, reducing the probability of wafer adhesion, and further reducing the wafer breakage rate.
[0051] In some embodiments, the number of process chambers and cooling chambers can be set according to actual needs. For example, when it is necessary to deposit aluminum or aluminum alloy in three steps, three process chambers and three cooling chambers can be set to deposit and cool the wafer three times respectively; after the second cooling step in the second cooling chamber 40, the wafer can also be transported back to the first process chamber 30 for the third deposition step. The specific number of process chambers and cooling chambers and the process flow can be set according to actual needs, and the present invention does not limit this.
[0052] Furthermore, in this embodiment, the surface of the first process chamber 30 facing the transfer chamber 10 is parallel to the first side surface of the transfer chamber 10, and the surface of the second process chamber 50 facing the transfer chamber 10 is parallel to the second side surface of the transfer chamber 10.
[0053] During specific implementation, the central axis of the first process chamber 30 passes through the center point of the second side surface of the transfer chamber 10, so that the first process chamber 30 is directly opposite to the first side surface of the transfer chamber 10; the central axis of the second process chamber 50 passes through the center point of the second side surface of the transfer chamber 10, so that the second process chamber 50 is directly opposite to the second side surface of the transfer chamber 10, facilitating subsequent wafer transfer and improving transfer efficiency.
[0054] Furthermore, in this embodiment, the surface of the first cooling chamber 40 facing the transfer chamber 10 is parallel to the third side surface of the transfer chamber 10, and the surface of the second cooling chamber 60 facing the transfer chamber 10 is parallel to the fourth side surface of the transfer chamber 10.
[0055] In specific implementation, the central axis of the first cooling cavity 40 passes through the center point of the third side surface of the transfer cavity 10, so that the first cooling cavity 40 faces the third side surface of the transfer cavity 10; the central axis of the second cooling cavity 60 passes through the center point of the fourth side surface of the transfer cavity 10, so that the second cooling cavity 60 faces the fourth side surface of the transfer cavity 10, facilitating subsequent wafer transfer and improving transfer efficiency.
[0056] Furthermore, in this embodiment, as Figure 2 shown, the cooling device 100 includes a cooling cavity wafer stage 110, a cooling gas input pipeline 120, and a cooling gas output pipeline 130; the cooling cavity wafer stage 110 includes an upper cooling stage 101 and a cooling stage support 102 located below the cooling stage; the cooling stage support 102 is cylindrical and perpendicular to the cooling stage 101; the cooling stage 101 is adapted to place the semiconductor substrate 400; the cooling gas input pipeline 120 and the cooling gas output pipeline 130 are arranged inside the cooling stage support 102; the cooling gas input pipeline 120 and the cooling gas output pipeline 130 are parallel to the cooling stage support 102.
[0057] In specific implementation, place the wafer on the cooling cavity wafer stage 110, then transmit cooling gas to the cooling cavity wafer stage 110 through the cooling gas input pipeline 120, use the cooling gas to cool the wafer, and discharge the cooling gas through the cooling gas output pipeline 130 to form a cooling gas cycle, which can effectively improve the cooling efficiency of the wafer.
[0058] In some embodiments, the cooling cavity wafer stage 101 can be set as Figure 3 shown, the surface of the cooling stage 101 is a concave surface, the semiconductor substrate 400 is placed on the surface of the cooling stage 101, cooling gas is introduced, and the concave surface is used to evenly blow the surface of the wafer with the cooling gas, so that the semiconductor substrate 400 is quickly cooled.
[0059] In other embodiments, the cooling cavity wafer stage 101 can be set as Figure 4 shown with a plurality of microporous structures. The plurality of microporous structures are beneficial to evenly cooling each part of the semiconductor substrate 400 with the cooling gas. At the same time, a first step is provided at the edge of the cooling cavity wafer stage to prevent the semiconductor substrate 400 from falling; and a second step is provided to form a gap between the bottom of the semiconductor substrate 400 and the cooling cavity wafer stage 101. The gap can be 20 μm, 30 μm, etc., and the specific value is set according to actual requirements.
[0060] Further, in this embodiment, a deposition device 200 is provided inside the first deposition process 30 and inside the second deposition chamber 50, as Figure 5 shown. The deposition device 200 includes a deposition chamber wafer stage 210; the deposition chamber wafer stage 210 includes an upper deposition stage 201 and a deposition stage support 202 located below the deposition stage; the deposition stage support 202 is cylindrical and perpendicular to the deposition stage 201; the deposition stage 201 is adapted to place the semiconductor substrate 400.
[0061] In specific implementation, when a relatively thick aluminum or aluminum alloy layer needs to be deposited on a wafer, in order to avoid overheating, it is divided into multiple steps of deposition. The wafer is placed on the deposition stage 201 inside the first process chamber 30, and a first thickness of aluminum or aluminum alloy layer is deposited on the surface of the wafer through physical vapor deposition process; the wafer is placed on the deposition stage 201 inside the second deposition chamber 50, and a second thickness of aluminum or aluminum alloy layer is deposited on the surface of the wafer through physical vapor deposition process. By completing the physical vapor deposition process of the relatively thick aluminum or aluminum alloy in steps, the thickness of each single deposition is reduced, effectively reducing the probability of wafer sticking.
[0062] Further, in this embodiment, a transfer module 300 is provided inside the transfer chamber 10, as Figure 6 shown in the schematic top view of the structure of the transfer module. The transfer module 300 includes a robotic arm 310, a telescopic assembly 320, and a control assembly 330; the transfer module 300 is adapted to transfer the semiconductor substrate from the surface of the deposition stage 200 to the surface of the cooling stage 100.
[0063] The robotic arm 310 is U-shaped, as Figure 7 shown. When the semiconductor substrate 400 needs to be transferred, the control assembly 330 sends an instruction, the robotic arm 310 extends from below the semiconductor substrate 400, lifts the semiconductor substrate 400, and then through the telescoping and movement of the telescopic assembly 320, transfers the semiconductor substrate 400 above the stage of other chambers. Finally, the robotic arm 310 is removed to complete the transfer of the semiconductor substrate 400; the telescopic assembly 320 is a telescopic cylinder; a control chip is provided inside the control assembly 330.
[0064] In some embodiments, the control assembly 330 is a prism corresponding to the transfer chamber. Multiple sides of the control assembly 330 are respectively parallel to multiple sides of the transfer chamber 10 and can be rotated at any angle so that any side of the control assembly is parallel to other sides of the transfer chamber 10, so that the transfer module 300 can flexibly transfer wafers to each chamber.
[0065] Further, in this embodiment, the control component 330 is disposed on the upper surface inside the transfer cavity 10 and is connected to the first end of the telescopic component 302; the robotic arm 310 is connected to the second end of the telescopic component 320; the control component 330 is adapted to control the movement of the robotic arm 310 through the telescopic component 320 and control the state of the robotic arm 310 to transfer the semiconductor substrate from the first process cavity 30 to the first cooling cavity 40 through the transfer channel 20.
[0066] In some embodiments, one side of the control component is connected to the first end of the telescopic component 302. When it is necessary to transfer the wafer from the first process cavity 30 to the first cooling cavity 40 through the transfer channel 20, first, control the control component to rotate by a first angle so that the telescopic component 320 faces the first process cavity 30, extend the telescopic component 320 through the transfer channel 20 into the first process cavity 30, and control the robotic arm 310 to lift the wafer from the deposition stage 201; then retract the telescopic component 320 through the transfer channel 20 back to the transfer cavity 10, and then control the control component to rotate by a second angle so that the telescopic component 320 faces the first cooling cavity 40, extend the telescopic component 320 through the transfer channel 20 into the first cooling cavity 40, and control the robotic arm 310 to place the wafer on the cooling stage 101. The transfer between other cavities is also carried out in the same manner.
[0067] Further, in this embodiment, a vacuum pump is connected to the bottom surface of the transfer cavity 10; vacuum pumps are also provided on the side of the first process cavity 30, the second process cavity 50, the first cooling cavity 40, and the second cooling cavity 60 on the same side as the bottom surface of the transfer cavity 10; an exhaust valve is provided on the side of the vacuum pump.
[0068] The vacuum pump is used to keep each cavity in a vacuum state during the process, improving the efficiency of physical vapor deposition.
[0069] Further, in this embodiment, a transfer valve is provided on the transfer channel 20.
[0070] The transfer valve can be used to control the transfer module 300 to enter the corresponding cavity to transfer the wafer.
[0071] Further, in this embodiment, the height of the cooling stage bracket is 10 cm - 30 cm, such as 10 cm, 20 cm, 30 cm.
[0072] In some other embodiments, the cooling stage bracket can also be set as a telescopic structure with a flexibly adjustable height.
[0073] In some embodiments, the cooling gas may be an inert gas such as nitrogen, helium, etc., which does not react with aluminum metal or aluminum alloy.
[0074] In one embodiment, an aluminum-copper alloy with a thickness of 4.0 μm needs to be deposited on a wafer. The entire physical vapor deposition process is evenly divided into 5 steps for implementation, and the thickness of the thin film deposited in a single cavity is 2.0 μm. During the deposition process, the sputtering power is 20.0 kilowatts, and argon is set at 100 ml / min. The deposition time for each step is 170 seconds. In the first step, 2.0 μm of aluminum-copper alloy is deposited in the first process cavity, and the deposition is completed. In the second step, the wafer is transferred to the first cooling cavity for cooling. During the wafer cooling process, nitrogen is set at 500 ml / min and cooled for 30 s, and the cooling is completed. In the third step, the wafer is transferred to the second process cavity, and the remaining 2.0 μm of aluminum-copper alloy is deposited in the second process cavity. In the fourth step, the wafer is transferred to the second cooling cavity for cooling. During the wafer cooling process, nitrogen is set at 500 ml / min and cooled for 30 s, and the cooling is completed. In the fifth step, after evacuating the cavity, the wafer can be taken out of the cavity, and the process ends.
[0075] Obviously, the above embodiments are only examples given for clear illustration and are not limitations on the implementation manners. For those of ordinary skill in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation manners here. And the obvious changes or modifications derived therefrom are still within the protection scope of the present invention.
Claims
1. A physical vapor deposition device that is easy to cool, used for physical vapor deposition of aluminum-containing metal on a semiconductor substrate, characterized in that: At least: The transport cavity is a hollow multi-prism with multiple sides, and each side of the transport cavity is provided with at least one corresponding transport channel; A first process chamber is located outside the first side of the transfer chamber and is connected to the first side of the transfer chamber through the delivery channel; The first process chamber is suitable for performing a first deposition step to preliminarily deposit an aluminum-containing metal on the semiconductor substrate; A first cooling cavity is located outside the third side of the transport cavity and is connected to the third side of the transport cavity through the transport channel; a cooling device is arranged inside the first cooling cavity; the first cooling cavity is suitable for performing a first cooling step on the semiconductor substrate after preliminary deposition to reduce the temperature of the semiconductor substrate to room temperature; A second process chamber is located outside the second side of the transport chamber and connected to the second side of the transport chamber through the delivery channel; the first process chamber is suitable for performing a second deposition step to deposit aluminum-containing metal on the semiconductor substrate for the second time; The second cooling chamber is located on the outside of the fourth side of the transfer chamber and is connected to the fourth side of the transfer chamber through the conveying channel; a cooling device is arranged inside the second cooling chamber; the second cooling chamber is suitable for performing a second cooling step on the semiconductor substrate after the secondary deposition to reduce the temperature of the semiconductor substrate to room temperature.
2. The physical vapor deposition device for easy cooling according to claim 1, characterized in that: A surface of the first process chamber facing the transfer chamber is parallel to a first side surface of the transfer chamber, and a surface of the second process chamber facing the transfer chamber is parallel to a second side surface of the transfer chamber.
3. The physical vapor deposition device for easy cooling according to claim 2, characterized in that: The surface of the first cooling cavity facing the transfer cavity is parallel to the third side of the transfer cavity, and the surface of the second cooling cavity facing the transfer cavity is parallel to the fourth side of the transfer cavity.
4. The physical vapor deposition device for easy cooling according to claim 3, characterized in that: The cooling device comprises a cooling cavity wafer stage, a cooling gas input pipeline and a cooling gas output pipeline; The cooling chamber wafer stage comprises an upper cooling stage and a cooling stage bracket located below the cooling stage; the cooling stage bracket is cylindrical and perpendicular to the cooling stage; the cooling stage is suitable for placing the semiconductor substrate; The cooling gas input pipeline and the cooling gas output pipeline are arranged inside the stage bracket.
5. The physical vapor deposition device for easy cooling according to claim 4, characterized in that: A deposition device is disposed inside the first process chamber and inside the second process chamber, and the deposition device includes a deposition chamber wafer stage; The deposition chamber wafer stage includes an upper deposition stage and a deposition stage bracket located below the deposition stage; the deposition stage bracket is cylindrical and perpendicular to the deposition stage; the deposition stage is suitable for placing the semiconductor substrate.
6. The physical vapor deposition device for easy cooling according to claim 5, characterized in that: A transfer module is disposed inside the transfer cavity, and the transfer module includes a mechanical arm, a telescopic component, and a control component; the transfer module is suitable for transferring the semiconductor substrate from the surface of the deposition stage to the surface of the cooling stage; The robotic arm is U-shaped; The telescopic component is a telescopic cylindrical shape; A control chip is arranged inside the control component.
7. The physical vapor deposition device for easy cooling according to claim 6, characterized in that: The control component is disposed on the upper surface of the inner side of the transfer cavity and is connected to the first end of the telescopic component; The mechanical arm is connected to the second end of the telescopic assembly; The control component is suitable for controlling the movement of the robot arm through the telescopic component, and controlling the state of the robot arm to transfer the semiconductor substrate from the first process chamber to the first cooling chamber through the conveying channel.
8. The physical vapor deposition device for easy cooling according to claim 7, characterized in that: The bottom surface of the transfer cavity is connected to a vacuum pump; The first process chamber, the second process chamber, the first cooling chamber and the second cooling chamber are also provided with a vacuum pump on the same side as the bottom surface of the transfer chamber; An exhaust valve is arranged on the side of the vacuum pump.
9. The physical vapor deposition device for easy cooling according to claim 8, characterized in that: A delivery valve is arranged on the delivery channel.
10. The physical vapor deposition device for easy cooling according to claim 8, characterized in that: The height of the cooling platform bracket is 10cm-30cm.