Optical device

Abstract

An optical device includes a first optical package and a cavity ring. The first optical package is over and bonded to the interposer substrate, and the interposer substrate includes a semiconductor substrate. The cavity ring is located on the semiconductor substrate.

Description

Technical Field

[0001] Embodiments of the present utility model relate to an optical device, and more particularly to an improved optical device. Background Art

[0002] Electrical signal transmission and processing is a technology for signal transmission and processing. In recent years, optical signal and processing have been used in more and more applications, especially due to the use of fiber optic related applications for signal transmission.

[0003] Optical signal and processing are usually combined with electrical signal and processing to provide mature applications. For example, optical fibers can be used for long-distance signal transmission, while electrical signals can be used for short-distance signal transmission and also for processing and control. Accordingly, a device integrating long-distance optical components and short-distance electrical components is formed for conversion between optical signals and electrical signals and also for processing of optical signals and electrical signals. Therefore, the package can include both optical (photonic) dies and electronic dies, and the optical (photonic) dies include optical devices and the optical (photonic) dies include electronic devices. Summary of the Utility Model

[0004] The purpose of the present utility model is to provide an optical device to solve at least one of the above problems.

[0005] In one embodiment, an optical device is provided. The optical device includes a first optical package and a cavity ring. The first optical package is located on and bonded to an interposer substrate, and the interposer substrate includes a semiconductor substrate. The cavity ring is located on the semiconductor substrate.

[0006] According to one embodiment of the present utility model, the cavity ring is located within a bonding layer of the interposer substrate.

[0007] According to one embodiment of the present utility model, the bonding layer of the interposer substrate further includes a first contact pad, the first optical package further includes a second contact pad, and the second contact pad is bonded to the first contact pad.

[0008] According to one embodiment of the present utility model, the cavity ring is located within a cavity resonance die, and the cavity resonance die is bonded to the interposer substrate.

[0009] According to one embodiment of the present utility model, the cavity resonance die further includes a waveguide, and the interposer substrate further includes an optical component, and the optical component and the cavity ring are optically connected through the waveguide.

[0010] According to one embodiment of the present utility model, the cavity resonance die further includes a cladding layer, and the cladding layer covers the cavity ring and the waveguide.

[0011] According to one embodiment of the present utility model, the cavity resonance die further includes an electrode and a bonding pad, the electrode is connected to the bonding pad, and the bonding pad is at least partially within the coating layer.

[0012] According to one embodiment of the present utility model, the interposer substrate further includes a first contact pad, the first optical package further includes a second contact pad, the bonding pad of the cavity resonance die is bonded to the first contact pad, and the second contact pad is bonded to the first contact pad.

[0013] According to one embodiment of the present utility model, it further includes a laser die bonded to the interposer substrate.

[0014] According to one embodiment of the present utility model, the interposer substrate further includes a metallization layer and an external connector, the metallization layer is disposed on the semiconductor substrate, and the external connector is disposed on the metallization layer. Description of the Drawings

[0015] The embodiments of the present utility model can be best understood by reading the following detailed description in conjunction with the accompanying drawings. It should be noted that, according to the standard operations in this industry, various components are not necessarily drawn to scale. In fact, the sizes of various components may be arbitrarily enlarged or reduced for clear illustration.

[0016] Figures 1 to 9 Shows the formation of a first optical package according to some embodiments.

[0017] Figure 10A and Figure 10B Shows the formation of a resonant cavity die according to some embodiments.

[0018] Figure 11A and Figure 11B Shows the bonding of the resonant cavity die and the first optical package to an interposer substrate according to some embodiments.

[0019] Figure 12A and Figure 12B Shows the formation of a resonant cavity within the interposer substrate according to some embodiments.

[0020] Figure 13A and Figure 13B Shows the use of a resonant cavity with a laser die according to some embodiments.

[0021] Figures 14A to 14CShows the formation of cavity grains of materials that can trigger third-order non-linearity without electrical driving mechanisms according to some embodiments.

[0022] Figures 15A to 15C Shows the incorporation of materials that can trigger third-order non-linearity without electrical driving mechanisms into an intermediate substrate according to some embodiments.

[0023] The reference numerals are as follows:

[0024] 100: Optical intermediate layer

[0025] 101: First substrate

[0026] 103: First insulating layer

[0027] 105: Material

[0028] 201: First active layer

[0029] 203: First optical component

[0030] 301: Semiconductor material

[0031] 401: Second insulating layer

[0032] 501: First metallization layer

[0033] 503: Second optical component

[0034] 505: First bonding layer

[0035] 507: First bonding pad

[0036] 509: First dielectric material

[0037] 511: Third optical component

[0038] 601: First semiconductor device

[0039] 603: Semiconductor substrate

[0040] 605: Active device

[0041] 607: Interconnection structure

[0042] 609: Second bonding layer

[0043] 611,909: Third bonding pad

[0044] 613: Second gap filling material

[0045] 701: Support substrate

[0046] 703: Coupling lens

[0047] 801: Second active layer

[0048] 803: Fourth optical component

[0049] 900: First optical package

[0050] 901: First device via hole

[0051] 903: Third bonding layer

[0052] 905: Optical fiber

[0053] 907: Optical glue

[0054] 911: Fifth optical component

[0055] 1000: Resonator die

[0056] 1001: Third substrate

[0057] 1003: Third insulating layer

[0058] 1005: Third active layer

[0059] 1007: Sixth optical component

[0060] 1009: Cavity ring

[0061] 1011: First waveguide

[0062] 1013: Cladding layer

[0063] 1015: Electrode

[0064] 1017,1111: Fourth bonding gasket

[0065] 1100: Interposer substrate

[0066] 1103: Semiconductor substrate

[0067] 1105: Third metallization layer

[0068] 1107: Second device via hole

[0069] 1109: Fourth bonding layer

[0070] 1115: Fifth bonding gasket

[0071] 1117: Fourth metallization layer

[0072] 1119: Third dielectric material

[0073] 1125: First external connector

[0074] 1121: Seventh optical component

[0075] 1300: Laser die

[0076] 1301: Laser diode

[0077] 1303: Second external connector Detailed implementation manners

[0078] The following disclosure provides many different embodiments or examples for implementing different components of the embodiments of the present utility model. The following describes specific examples of components and arrangements to simplify the embodiments of the present utility model. Of course, these specific examples are only examples and are not intended to limit. For example, if the embodiments of the present utility model describe that a first component is formed over or on a second component, it means that it may include an embodiment in which the aforementioned first component and the aforementioned second component are formed in a direct contact manner, and may also include an embodiment in which other components are formed between the aforementioned first component and the aforementioned second component, so that the aforementioned first component and the aforementioned second component may not be in direct contact. In addition, the embodiments of the present utility model may repeat element symbols and / or characters in various examples. This repetition itself does not limit the relationship between the various embodiments and / or configurations discussed, but is for the purpose of simplification and clarity.

[0079] Furthermore, for ease of description, spatially relative terms such as "beneath", "below", "lower", "above", "upper", and their like may be used herein to describe the relationship between one element or component and another (some) element or component as shown in the drawings. In addition to the directions depicted in the drawings, spatially relative terms are intended to encompass different directions of the device during use or operation. The device may be oriented in other directions (rotated 90 degrees or in other directions), and the spatially relative terms used herein may be interpreted accordingly.

[0080] Now, some embodiments will be discussed in which one or more frequency comb cavities are functionally incorporated with a compact universal photonic engine (COUPE). However, the embodiments presented herein are illustrative and are not intended to limit the embodiments to the exact descriptions discussed. On the contrary, the discussed embodiments can be incorporated into various implementations, and all such implementations are fully intended to be included within the scope of the embodiments.

[0081] Now referring to Figure 1 , an initial structure of an optical interposer 100 (refer to Figure 5 ) according to some embodiments is shown. In the specific embodiment shown in Figure 1 , the optical interposer 100 is a photonic integrated circuit (PIC) and at this stage includes a first substrate 101, a first insulating layer 103, and a layer of material 105 for a first active layer 201 of a first optical component 203 (not shown separately in Figure 1 but further shown and discussed below with reference to Figure 2 ). In one embodiment, at the start of the manufacturing process of the optical interposer 100, the first substrate 101, the first insulating layer 103, and the layer of material 105 for the first active layer 201 of the first optical component 203 can collectively be part of a silicon-on-insulator (SOI) substrate. Looking first at the first substrate 101, the first substrate 101 can be a semiconductor material such as silicon or germanium, a dielectric material such as glass, or any other suitable material that allows for structural support of the overlying device.

[0082] The first insulating layer 103 can be a dielectric layer that separates the first substrate 101 from the upper first active layer 201, and in some embodiments can also additionally serve as part of a cladding material that surrounds a subsequently fabricated first optical component 203 (discussed further below). In one embodiment, the first insulating layer 103 can be formed using a method such as implantation, or can be deposited onto the first substrate 101 using a method such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, a combination thereof, or a similar deposition method, such as silicon oxide, silicon nitride, germanium oxide, germanium nitride, a combination thereof, or the like (e.g., to form a buried oxide (BOX) layer). However, any suitable materials and fabrication methods can be used.

[0083] The material 105 for the first active layer 201 is initially (before patterning) a conformal layer of the material of the first active layer 201 that will be used to begin fabricating the first optical component 203. In one embodiment, the material 105 for the first active layer 201 can be a translucent material, such as a semiconductor material, such as silicon, germanium, silicon germanium, a combination thereof, or the like, that can be used as the core material of the desired first optical component 203. While in other embodiments, the material 105 for the first active layer 201 can be a III-V material, a lithium niobate material, or a polymer, in other embodiments, the material 105 for the first active layer 201 can be a dielectric material such as silicon nitride or the like. In embodiments where the material 105 for the first active layer 201 is deposited, methods such as epitaxial growth, chemical vapor deposition, atomic layer deposition, physical vapor deposition, a combination thereof, or a similar method can be used to deposit the material 105 for the first active layer 201. In other embodiments where the first insulating layer 103 is formed using an implantation method, the material 105 for the first active layer 201 can initially be part of the first substrate 101 before the implantation process used to form the first insulating layer 103. However, any suitable materials and fabrication methods can be utilized to form the material 105 for the first active layer 201.

[0084] Figure 2It is shown that once the material 105 for the first active layer 201 is prepared, the material 105 for the first active layer 201 is used to fabricate the first optical component 203 for the first active layer 201. In one embodiment, the first optical component 203 of the first active layer 201 may include, such as, optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides), couplers (e.g., grating couplers, edge couplers, where the edge coupler is a narrowed waveguide having a width between about 1 nm and about 200 nm, etc.), directional couplers, optical modulators (e.g., Mach-Zehnder silicon-photonic switches, microelectromechanical switches, micro-ring resonators, etc.), amplifiers, multiplexors, demultiplexors, optical-to-electrical converters (e.g., PN junctions), electrical-to-optical converters, lasers, combinations thereof, or the like. However, any suitable first optical component 203 may be used.

[0085] To begin forming the first active layer 201 of the first optical component 203 from the initial material, the material 105 for the first active layer 201 may be patterned into the desired shape of the first active layer 201 of the first optical component 203. In one embodiment, for example, one or more photolithography masks and an etching process may be used to pattern the material 105 for the first active layer 201. However, any suitable method for patterning the material 105 for the first active layer 201 may be utilized. For some first optical components 203, such as waveguides or edge couplers, the patterning process may be all or at least most of the fabrication for forming these first optical component 203 parts.

[0086] Figure 3 It is shown that for those components that utilize further manufacturing processes, such as Mach-Zehnder silicon photonic switches that utilize resistive heating elements, additional processes can be performed before or after the patterning of the material for the first active layer 201. For example, an implantation process, other deposition and patterning processes for different materials (e.g., resistive heating elements, III-V materials for converters), combinations thereof, or similar processes can be utilized to assist in further manufacturing various desired first optical components 203. In a particular embodiment, and as Figure 3 specifically shown in, in some embodiments, epitaxial deposition of a semiconductor material 301, such as germanium (e.g., for electro / optical signal modulation and conversion), can be performed on the patterned portion of the material 105 of the first active layer 201. In such an embodiment, the semiconductor material 301 can be epitaxially grown to assist in manufacturing, for example, a photodiode for a photoelectric converter. All such manufacturing processes and all suitable first optical components 203 can be fabricated, and all such combinations are fully intended to be included within the scope of the embodiments.

[0087] Figure 4 It is shown that once the respective first optical components 203 of the first active layer 201 have been formed, a second insulating layer 401 can be deposited to cover the first optical components 203 and provide additional cladding material. In one embodiment, the second insulating layer 401 can be a dielectric layer that separates the respective components of the first active layer 201 from each other and from overlying structures, and can additionally serve as another portion of the cladding material surrounding the first optical components 203. In one embodiment, the second insulating layer 401 can be silicon oxide, silicon nitride, germanium oxide, germanium nitride, combinations thereof, or the like formed using deposition methods such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, combinations thereof, or similar deposition methods. Once the material of the second insulating layer 401 has been deposited, a process such as chemical mechanical polishing (CMP) can be used to planarize the material in order to either planarize the top surface of the second insulating layer 401 (in embodiments where the second insulating layer 401 is intended to completely cover the first optical components 203), or else planarize the second insulating layer 401 with the top surface of the first optical components 203. However, any suitable materials and manufacturing methods can be used.

[0088] Figure 5Shown is that once the first optical component 203 of the first active layer 201 has been fabricated and the second insulating layer 401 has been formed, the first metallization layer 501 is formed to electrically connect the first active layer 201 of the first optical component 203 to the control circuit, electrically connect to each other, and electrically connect to subsequently attached devices (not shown separately in Figure 5 but is further shown and discussed below with reference to Figure 6 ). In one embodiment, the first metallization layer 501 is formed of alternating layers of dielectric and conductive materials and can be formed by any suitable process such as deposition, damascene, dual damascene, etc. In a particular embodiment, there may be multiple metallization layers for interconnecting the respective first optical components 203, but the exact number of the first metallization layer 501 depends on the design of the optical interposer 100.

[0089] Additionally, during the fabrication of the first metallization layer 501, one or more second optical components 503 may be formed as part of the first metallization layer 501. In some embodiments, the second optical components 503 of the first metallization layer 501 may include, for example, couplers for connecting external signals (e.g., edge couplers, grating couplers, etc.), optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, etc.), optical modulators (e.g., Mach-Zehnder silicon photon switches, microelectromechanical switches, microring resonators, etc.), amplifiers, multiplexers, demultiplexers, optoelectronic converters (e.g., PN junctions), electro-optic converters, lasers, combinations thereof, or the like. However, any suitable optical component may be used for the one or more second optical components 503.

[0090] In one embodiment, the one or more second optical components 503 may be formed by initially depositing a material for the one or more second optical components 503. In one embodiment, the material for the one or more second optical components 503 may be a dielectric material such as silicon nitride, silicon oxide, combinations thereof, or the like, or may be a semiconductor material such as silicon, and is deposited using a deposition method such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, combinations thereof, or similar methods. However, any suitable material and any suitable deposition method may be utilized.

[0091] Once the material for the one or more second optical components 503 has been deposited or otherwise formed, the material may be patterned into the desired shape of the one or more second optical components 503. In one embodiment, for example, one or more photolithography masks and etching processes may be used to pattern the material of the one or more second optical components 503. However, any suitable method for patterning the material for the one or more second optical components 503 may be utilized.

[0092] For some of the one or more second optical components 503, such as waveguides or edge couplers, the patterning process can be all or at least most of the fabrication used to form these components. Additionally, for those components that utilize further fabrication processes, such as Mach-Zehnder silicon photon switches that utilize resistive heating elements, additional processes can be performed before or after the patterning of the material for the one or more second optical components 503. For example, an implantation process, other deposition and patterning processes for different materials, combinations thereof, or similar processes can be utilized to aid in further fabricating the various desired one or more second optical components 503. All such fabrication processes and all suitable one or more second optical components 503 can be fabricated, and all such combinations are fully intended to be included within the scope of the embodiments.

[0093] Once the one or more second optical components 503 of the first metallization layer 501 have been fabricated, a first bonding layer 505 is formed over the first metallization layer 501. In one embodiment, the first bonding layer 505 can be used for dielectric-to-dielectric and metal-to-metal bonds. According to some embodiments, the first bonding layer 505 is formed from a first dielectric material 509 such as silicon oxide, silicon nitride, or the like. Any suitable method can be used to deposit the first dielectric material 509, such as CVD, high-density plasma chemical vapor deposition (HDPCVD), PVD, atomic layer deposition (ALD), or similar processes. However, any suitable materials and deposition processes can be utilized.

[0094] Once the first dielectric material 509 has been formed, a first opening is formed in the first dielectric material 509 to expose the underlying conductive portion, in preparation for forming the first bonding pad 507 within the first bonding layer 505. Once the first opening has been formed within the first dielectric material 509, the first opening can be filled with a seed layer and plated metal to form the first bonding pad 507 within the first dielectric material 509. The seed layer can be deposited blanketly over the top surface of the first dielectric material 509, the underlying exposed conductive portion, and the sidewalls of the opening and the second opening. The seed layer can include a copper layer. Depending on the desired material, a process such as sputtering, evaporation, or plasma-enhanced chemical vapor deposition (PECVD) or a similar process can be used to deposit the seed layer. The plated metal can be deposited on the seed layer by an electroplating process such as electroplating or electroless plating. The plated metal can include copper, a copper alloy, or the like. The plated metal can be the filling material. Prior to the seed layer, a barrier layer (not shown separately) can be deposited blanketly over the top surface of the first dielectric material 509 and the sidewalls of the opening and the second opening. The barrier layer can include titanium, titanium nitride, tantalum, tantalum nitride, or the like.

[0095] After filling the first opening, a planarization process such as CMP is performed to remove the excess portions of the seed layer and the plated metal, thereby forming the first bonding pad 507 within the first bonding layer 505. In some embodiments, bonding pad vias (not shown separately) can also be used to connect the first bonding pad 507 to the underlying conductive portion and, through the underlying conductive portion, connect the first bonding pad 507 to the first metallization layer 501.

[0096] Additionally, the first bonding layer 505 can further include one or more third optical components 511 incorporated within the first bonding layer 505. In such an embodiment, prior to depositing the first dielectric material 509, the one or more third optical components 511 can be fabricated using methods and materials similar to those of the one or more second optical components 503 (described above), such as waveguides and other structures formed at least in part by deposition and patterning processes. However, any suitable structures, materials, and any suitable manufacturing methods can be utilized.

[0097] Figure 6Shows a first bonding layer 505 that bonds the first semiconductor device 601 to the optical interposer 100. In some embodiments, the first semiconductor device 601 is an electronic integrated circuit (EIC) (e.g., a device without optical devices), and may have a semiconductor substrate 603, a layer of active devices 605, an upper interconnect structure 607, a second bonding layer 609, and an associated third bonding pad 611. In one embodiment, the semiconductor substrate 603 may be similar to the first substrate 101 (e.g., a semiconductor material such as silicon or silicon germanium), the active devices 605 may be transistors, capacitors, resistors, and the like formed on the semiconductor substrate 603, the interconnect structure 607 may be similar to the first metallization layer 501 (without optical components), the second bonding layer 609 may be similar to the first bonding layer 505, and the third bonding pad 611 may be similar to the first bonding pad 507. However, any suitable device may be utilized.

[0098] In one embodiment, the first semiconductor device 601 may be configured to work with the optical interposer 100 to achieve a desired function. In some embodiments, the first semiconductor device 601 may be a high bandwidth memory (HBM) module, an xPU, a logic die, a three-dimensional integrated circuit (3DIC) die, a central processing unit (CPU), a graphics processing unit (GPU), a system-on-chip (SoC) die, a Micro-Electro Mechanical Systems (MEMS) die, a combination thereof, or the like. Any suitable device with any suitable function may be used, and all such devices are fully intended to be included within the scope of the embodiments.

[0099] In one embodiment, dielectric-to-dielectric and metal-to-metal bonding processes can be used to bond the first semiconductor device 601 and the first bonding layer 505. In a particular embodiment utilizing dielectric-to-dielectric and metal-to-metal bonding processes, the process can be initiated by activating the surfaces of the second bonding layer 609 and the first bonding layer 505. Activating the top surfaces of the first bonding layer 505 and the second bonding layer 609 can include, by way of example, dry processing, wet processing, plasma processing, exposure to an inert gas plasma, exposure to H2, exposure to N2, exposure to O, combinations thereof, or similar processes. In an embodiment using wet processing, for example, standard cleaning (RCA) can be used. In another embodiment, the activation process can include other types of processing. The activation process facilitates the bonding of the first bonding layer 505 and the second bonding layer 609.

[0100] After the activation process, the optical interposer 100 and the first semiconductor device 601 can be cleaned, for example, using a chemical rinse, and then the first semiconductor device 601 can be aligned and placed in physical contact with the optical interposer 100. Then, a heat treatment and contact pressure are applied to the optical interposer 100 and the first semiconductor device 601 to bond the optical interposer 100 and the first semiconductor device 601. For example, the optical interposer 100 and the first semiconductor device 601 can be subjected to a pressure of about 200 kPa or less and a temperature between about 25°C and about 250°C to fuse the optical interposer 100 and the first semiconductor device 601. Then, the optical interposer 100 and the first semiconductor device 601 can be subjected to a temperature at or above the eutectic point of the materials of the first bonding pad 507 and the third bonding pad 611, for example, between about 150°C and about 650°C, to melt the metal. In this way, the optical interposer 100 and the first semiconductor device 601 form a dielectric-to-dielectric and metal-to-metal bonded device. In some embodiments, the bonded die are subsequently baked, annealed, pressed, or otherwise processed to strengthen or finalize the bond.

[0101] Additionally, while specific processes for initiating and strengthening the bond have been described, these descriptions are intended to be illustrative and not intended to limit the embodiments. Instead, any suitable combination of baking, annealing, pressing, or combinations of their processes can be utilized. All such processes are fully intended to be included within the scope of the embodiments.

[0102] Figure 6Also shown is that once the first semiconductor device 601 has been bonded, a second gap filling material 613 is deposited to fill the space around the first semiconductor device 601 and provide additional support. In one embodiment, the second gap filling material 613 can be a material that is deposited to fill and overfill the space around the first semiconductor device 601, such as silicon oxide, silicon nitride, silicon oxynitride, combinations thereof, or the like. However, suitable materials and deposition methods can be used.

[0103] Once the second gap filling material 613 has been deposited, the second gap filling material 613 can be planarized to expose the first semiconductor device 601. In one embodiment, the planarization process can be a chemical mechanical planarization process, a grinding process, or a similar process. However, any suitable planarization process can be utilized.

[0104] Figure 7 Shown is the attachment of the support substrate 701 to the first semiconductor device 601 and the second gap filling material 613. In one embodiment, the support substrate 701 can be a support material that is transparent to the wavelength of light desired to be used, such as silicon, and can be attached using, for example, an adhesive ( Figure 7 not shown separately). However, in other embodiments, the support substrate 701 can be bonded to the first semiconductor device 601 and the second gap filling material 613 using, for example, a bonding process. Any suitable method for attaching the support substrate 701 can be used.

[0105] Figure 7 Also shown is the support substrate 701, which includes a coupling lens 703 that is positioned to facilitate movement from an optical fiber 905 (not shown separately in Figure 7 but shown and discussed further below with reference to Figure 9 a grating coupler in, for example, the first optical component 203, the second optical component 503, or the third optical component 511 of the first metallization layer 501. In one embodiment, the coupling lens 703 can be formed by shaping the material (e.g., silicon) of the support substrate using a mask and an etching process. However, any suitable process can be utilized.

[0106] Figure 8shows the removal of the first substrate 101 and optionally the first insulating layer 103 to expose the first active layer 201 of the first optical component 203. In one embodiment, a planarization process, such as chemical mechanical polishing, grinding, one or more etching processes, a combination thereof, or the like, can be used to remove the first substrate 101 and the first insulating layer 103. However, any suitable method can be used to remove the first substrate 101 and / or the first insulating layer 103.

[0107] Once the first substrate 101 and the first insulating layer 103 have been removed, the second active layer 801 of the fourth optical component 803 can be formed on the back side of the first active layer 201. In one embodiment, the second active layer 801 of the fourth optical component 803 can be formed using materials and processes similar to those of the second optical component 503 of the first metallization layer 501 (described above with reference to Figure 5 ). For example, the second active layer 801 of the fourth optical component 803 can be formed of alternating layers of a cladding material such as silicon oxide and a core material such as silicon nitride formed using deposition and patterning processes to form an optical component such as a waveguide and the like.

[0108] Figure 9 shows the formation of first through device vias (TDV) 901, the formation of a third bonding layer 903, and the placement of an optical fiber 905 to form a first optical package 900. In one embodiment, the first through device vias 901 extend through the second active layer 801 and the first active layer 201 to provide a fast path for power, data, and ground through the optical interposer 100. In one embodiment, the first through device vias 901 can be formed by initially forming through device via openings in the optical interposer 100. The through device via openings can be formed by applying and developing a suitable photoresist (not shown) and removing the exposed portions of the second active layer 801 and the optical interposer 100.

[0109] Once a device viaduct opening has been formed within the optical interposer 100, the device viaduct opening can be lined with a liner. Although any suitable dielectric material can alternatively be used, the liner can be, for example, an oxide or silicon nitride formed from tetraethylorthosilicate (TEOS). Although other suitable processes, such as physical vapor deposition or thermal processes, can be used, the liner can be formed using a plasma-enhanced chemical vapor deposition (PECVD) process.

[0110] Once a liner has been formed along the sidewalls and bottom of the device viaduct opening, a barrier layer (not separately shown either) can be formed, and the remaining portion of the device viaduct opening can be filled with a first conductive material. Although other suitable materials, such as aluminum, alloys, doped polysilicon, combinations thereof, and the like, can be used, the first conductive material can include copper. The first conductive material can be formed by electroplating copper onto a seed layer (not shown), filling, and overfilling the device viaduct opening. Once the device viaduct opening has been filled, although any suitable removal process can be used, the excess liner, barrier layer, seed layer, and first conductive material outside the device viaduct opening can be removed by a planarization process such as chemical mechanical polishing (CMP).

[0111] Optionally, in some embodiments, once the first device viaduct 901 has been formed, a second metallization layer ( Figure 9 not separately shown in) that is electrically connected to the first device viaduct 901 can be formed. In one embodiment, the second metallization layer can be formed as described above with respect to the first metallization layer 501, such as an alternating layer of a dielectric material and a conductive material using a damascene process, a dual damascene process, or the like. In other embodiments, the second metallization layer can be formed using an electroplating process and shaping the conductive material, and then covering the conductive material with a dielectric material. However, any suitable structure and manufacturing method can be utilized.

[0112] The third bonding layer 903 is formed to provide an electrical connection between the optical interposer 100 and a subsequently attached device. In one embodiment, the third bonding layer 903 can be similar to the first bonding layer 505, such as having a third bonding pad 909 (similar to the first bonding pad 507) and even a fifth optical component 911 (similar to the third optical component 511). However, any suitable device can be utilized.

[0113] Optionally, at this point in the process, an optical fiber 905 may be attached. In one embodiment, the optical fiber 905 is used as an optical input / output port to the optical interposer 100. In one embodiment, the optical fiber 905 is placed such that the optical fiber 905 is optically coupled to an optical input end, such as a grating coupler ( Figure 9 not shown separately), which is part of the first optical component 203, the second optical component 503, or the third optical component 511. By placing the optical fiber 905 in this manner, the optical signal leaving the optical fiber 905 is directed toward, for example, the first active layer 201 of the first optical component 203. Similarly, the optical fiber 905 is positioned such that the optical signal leaving the first active layer 201 of the first optical component 203 is directed to the optical fiber 905 for transmission. However, any suitable location may be utilized.

[0114] The optical fiber 905 may be held in place using, for example, an optical adhesive 907. In some embodiments, the optical adhesive 907 includes a polymeric material such as epoxy-acrylate oligomers and may have a refractive index between approximately 1 and approximately 3. However, any suitable material may be used.

[0115] Additionally, although the optical fiber 905 is shown as being attached at this point in the manufacturing process, this is intended to be illustrative and not limiting. Instead, the optical fiber 905 may be attached at any suitable point in the process. Any suitable attachment point may be utilized, and all such attachments at any point in the process are fully intended to be included within the scope of the embodiments.

[0116] Figure 10A and Figure 10B (where Figure 10A is a cross-sectional view, Figure 10B showing a top down view) shows that once each device is bonded to the interposer substrate 1100 (not shown separately in Figure 10A but described below with reference to Figure 11AThe resonant cavity die 1000, which will be further shown and discussed, is for use in combination with the optical interposer 100. In one embodiment, the resonant cavity die 1000 includes a resonant cavity that is configured to receive light from the intermediate substrate 1100 and modulate the light before the light is sent to the optical interposer 100. Additionally, while the resonant cavity die 1000 is shown and described as having a resonant cavity, the embodiments described herein may also include any other suitable optical or electronic device.

[0117] In a particular embodiment, the resonant cavity die 1000 includes a third substrate 1001, a third insulating layer 1003, and a third active layer 1005 of a sixth optical component 1007, with one of them including the resonant cavity. In one embodiment, the third substrate 1001 may be similar to the support substrate 701, such as a silicon substrate. However, any suitable material may be used.

[0118] The third insulating layer 1003 may be formed over the third substrate 1001. In one embodiment, the third insulating layer 1003 includes a cladding material and / or a dielectric material, such as silicon oxide, silicon nitride, germanium oxide, germanium nitride, a combination thereof, or the like, and is formed using a deposition method such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, a combination thereof, or a similar process. Once the material of the third insulating layer 1003 has been deposited, a chemical mechanical polishing process, for example, may be used to planarize the material to planarize the top surface of the third insulating layer 1003. However, any suitable material and manufacturing method may be used.

[0119] The third active layer 1005 of the sixth optical component 1007 is formed over the third insulating layer 1003. In one embodiment, the third active layer 1005 of the sixth optical component 1007 includes a resonant cavity, such as a cavity ring 1009 (refer to the top view in Figure 10B ), having an associated first waveguide 1011, which may be formed of a material that can trigger second-order nonlinearity in the light received from the intermediate substrate 1100. In a particular embodiment, the material is lithium niobate (LN) formed using a deposition process, such as reactive radiofrequency sputtering, chemical vapor deposition, pulsed laser technology, a combination thereof, or a similar process. However, any suitable material and deposition method may be utilized.

[0120] Once the material for the cavity ring 1009 and its associated first waveguide 1011 have been deposited, the material can be patterned into the desired shape of the cavity ring 1009 (e.g., a ring). In one embodiment, the material can be patterned using a photolithographic mask and an etching process to form a ring shape. However, any suitable method can be utilized.

[0121] Additionally, once the cavity ring 1009 and its associated first waveguide 1011 have been formed, or before the cavity ring 1009 and its associated first waveguide 1011 are formed, other optical devices of the third active layer 1005 of the sixth optical component 1007 can be formed. In one embodiment, the other optical devices can be similar to and fabricated in a similar manner as the fifth optical component 911 (described above with reference to Figure 9 ). However, any suitable devices and fabrication methods can be utilized.

[0122] Once the cavity ring 1009 and the first waveguide 1011 have been formed, the cavity ring 1009 and the first waveguide 1011 can be covered using a cladding layer 1013. In one embodiment, the cladding layer 1013 can be a cladding material such as silicon oxide, silicon nitride, germanium oxide, germanium nitride, a combination thereof, or the like, and is formed by a deposition method such as chemical vapor deposition, atomic layer deposition, physical vapor deposition, a combination thereof, or a similar process. However, any suitable material can be used.

[0123] Once the cladding layer 1013 has been formed, an electrode 1015 is formed to assist in generating a desired electric field around the cavity ring 1009. In one embodiment, materials and processes similar to those of the first metallization layer 501 (described above with reference to Figure 5 ) can be used to form the electrode 1015, such as damascene or dual damascene processes. However, any suitable methods and materials can be utilized.

[0124] Once the electrode 1015 has been formed, a fourth bonding pad 1017 is formed at least partially within the cladding layer 1013 to provide material for a subsequent bonding process. In one embodiment, the fourth bonding pad 1017 can be formed using materials and a similar process as the first bonding pad 507 (described above with reference to Figure 5 ).

[0125] Figure 10BA top view of the cavity ring 1009, the first waveguide 1011, the electrode 1015, and the fourth bonding pad 1017 is shown. As can be seen in this view, the first waveguide 1011 is positioned to receive light and couple light into and out of the cavity ring 1009. Additionally, the electrode 1015 is positioned to provide a desired electric field around the material (e.g., lithium niobate) of the cavity ring 1009 in order to modulate the light within the cavity ring 1009, and the fourth bonding pad 1017 provides a connection between the electrode 1015 and a subsequently bonded device.

[0126] Figure 11A Shown is that once the first optical package 900 and the resonator die 1000 have been fabricated, the first optical package 900 and the resonator die 1000 can be attached to an interposer substrate 1100, which is used to couple the first optical package 900 and the resonator die 1000 to other devices to form, for example, a chip-on-wafer-on-substrate (CoWoS). In one embodiment, the interposer substrate 1100 includes a semiconductor substrate 1103, a third metallization layer 1105, a second through-device via (TDV) 1107, and a fourth bonding layer 1109 having a fourth bonding pad 1111. The semiconductor substrate 1103 can include a bulk silicon, doped or undoped, or the active layer of a silicon-on-insulator (SOI) substrate. Generally, an SOI substrate includes layers of semiconductor material such as silicon, germanium, silicon germanium, SOI, silicon germanium on insulator (SGOI), or combinations thereof. Other substrates that can be used include multi-layered substrates, gradient substrates, or hybrid orientation substrates.

[0127] Optionally, a first active device (not shown separately) can be added to the semiconductor substrate 1103. The first active device includes various active and passive devices such as capacitors, resistors, inductors, and the like that can be used to generate the desired structural and functional requirements of the design of the semiconductor substrate 1103. Any suitable method can be used to form the first active device within or on the semiconductor substrate 1103.

[0128] A third metallization layer 1105 is formed over the semiconductor substrate 1103 and the first active devices, and the third metallization layer 1105 is designed to connect various active devices to form a functional circuit. In one embodiment, the third metallization layer 1105 is formed of alternating layers of a dielectric (e.g., a low dielectric constant (low-k) dielectric material, an extremely low-k dielectric material, an ultra low-k dielectric material, a combination thereof, or the like) and a conductive material, and can be formed by any suitable process (such as deposition, damascene, dual damascene, etc.). However, any suitable materials and processes can be utilized.

[0129] Additionally, at any desired point in the manufacturing process, a second device via (second TDV) 1107 can be formed within the semiconductor substrate 1103 and, if desired, within one or more layers of the third metallization layer 1105 to provide an electrical connection from the front side of the semiconductor substrate 1103 to the back side of the semiconductor substrate 1103. In one embodiment, the second TDV 1107 can be formed by initially forming a through device via (TDV) opening in the semiconductor substrate 1103, and if desired, the second TDV 1107 can be formed in any upper layer of the third metallization layer 1105 (e.g., after the desired third metallization layer 1105 has been formed, but before forming the next upper layer of the third metallization layer 1105). The TDV opening can be formed by applying and developing a suitable photoresist and removing a portion of the underlying material exposed to a desired depth. The TDV opening can be formed to extend into the semiconductor substrate 1103 to a depth greater than the eventual desired height of the semiconductor substrate 1103.

[0130] Once the TDV opening has been formed in the semiconductor substrate 1103 and / or any of the third metallization layers 1105, the TDV opening can be lined with a liner. Although any suitable dielectric material can be used, the liner can be, for example, an oxide formed from tetraethyl orthosilicate (TEOS) or silicon nitride. Although other suitable processes, such as physical vapor deposition or thermal processes, can be used, the liner can be formed using a plasma enhanced chemical vapor deposition (PECVD) process.

[0131] Once a liner has been formed along the sidewalls and bottom of the TDV opening, a barrier layer can be formed and the remainder of the TDV opening can be filled with a first conductive material. Although other suitable materials such as aluminum, alloys, doped polysilicon, combinations thereof, and the like can be used, the first conductive material can include copper. The first conductive material can be formed by electroplating copper onto a seed layer, filling, and overfilling the TDV opening. Once the TDV opening has been filled, although any suitable removal process can be used, the excess liner, barrier layer, seed layer, and first conductive material outside the TDV opening can be removed by a planarization process such as chemical mechanical polishing (CMP).

[0132] Once the TDV opening has been filled, the semiconductor substrate 1103 can be thinned until the second TDV 1107 is exposed. In one embodiment, the semiconductor substrate 1103 can be thinned using, for example, a chemical mechanical polishing process, a grinding process, or a similar process. Additionally, once exposed, one or more etching processes such as a wet etching process can be used to recess the second TDV 1107 and the semiconductor substrate 1103 such that the second TDV 1107 extends out of the semiconductor substrate 1103.

[0133] Once the second TDV 1107 has been exposed, a fourth metallization layer 1117 can be formed that is electrically connected to the second TDV 1107. In one embodiment, the fourth metallization layer 1117 can be formed using methods and materials similar to those of the third metallization layer 1105. However, any suitable methods and materials can be utilized.

[0134] In one embodiment, the first external connectors 1125 may be placed on the fourth metallization layer 1117 to be electrically connected to the second TDV 1107, and may be, for example, a ball grid array (BGA), although any suitable material may be used, including eutectic materials such as solder. In an embodiment where the first external connector 1125 is solder bumps, the first external connector 1125 may be formed using a ball drop method, such as a direct ball drop process. In another embodiment, the solder bumps may be formed by first forming a tin layer by any suitable method, such as evaporation, electroplating, printing, solder transfer, and then performing reflow to shape the material into the desired bump shape. Once the first external connector 1125 has been formed, testing may be performed to ensure that the structure is suitable for further processing.

[0135] The fourth bonding layer 1109 is formed over the third metallization layer 1105. In one embodiment, the fourth bonding layer 1109 may include a third dielectric material 1119 and a fourth bonding pad 1111, and may be formed using materials and processes similar to those of the first bonding layer 505 (described above with reference to Figure 5 ). However, any suitable materials and any suitable methods may be utilized.

[0136] In addition, a seventh optical component 1121 is formed within the fourth bonding layer 1109. In one embodiment, as described above with reference to Figure 5 , the seventh optical component 1121 is formed using materials (e.g., silicon nitride) and suitable methods (deposition and patterning) similar to those of the third optical component 511. For example, the seventh optical component 1121 may include a waveguide formed using silicon nitride to provide a connection between the first optical package 900 and the resonant cavity die 1000. However, any suitable devices, methods, and processes may be utilized.

[0137] Once the interposer substrate 1100 has been formed, the first optical package 900 and the resonant cavity die 1000 may be attached to the interposer substrate 1100. In one embodiment, similar to the above regarding Figure 6In the described process, using dielectric-to-dielectric and metal-to-metal bonding processes, the first optical package 900 and the resonant cavity die 1000 can be attached to the interposer substrate 1100. For example, the surfaces of the first optical package 900, the resonant cavity die 1000, and the interposer substrate 1100 are activated so that the third bonding pads 909 and the fourth bonding pads 1017 are aligned and placed in contact with the fourth bonding pads 1111 of the interposer substrate 1100, and subsequent annealing and pressure are used to strengthen the bond. However, any suitable bonding process can be utilized.

[0138] Figure 11B A top view showing the relationship between the cavity ring 1009, its associated first waveguide 1011, and a seventh optical component 1121 (e.g., a second waveguide) located within the interposer substrate 1100, where some components have been removed from this figure for clarity in illustrating the relationship. From Figure 11B it can be seen that the first waveguide 1011 is in optical connection and helps to optically connect the interposer substrate 1100 to the cavity ring 1009. In this way, the cavity ring 1009 can be used to receive light from the interposer substrate 1100, modulate the received light (based on the electric field applied through the electrodes 1015), and then send the light back to the interposer substrate 1100.

[0139] In operation, the interposer substrate 1100 will receive light (represented by the arrow labeled 1123 in Figure 11A ) and direct the light into a waveguide (e.g., the waveguide of the seventh optical component 1121). The seventh optical component 1121 will couple the light in the first waveguide 1011 (within the resonant cavity die 1000), and the first waveguide 1011 will couple the light into the cavity ring 1009. The control electrodes 1015 are used to modulate the light as it goes through the cavity ring 1009, and then the modulated light is coupled back into the first waveguide 1011. Then, the first waveguide 1011 couples the modulated light back into the waveguide of the seventh optical component 1121. Then, the seventh optical component 1121 can route the modulated light to the first optical package 900, where the light will be coupled to the fifth optical component 911 and throughout the first optical package 900.

[0140] By forming a cavity ring 1009 on the resonator die 1000 and then bonding the resonator die 1000 to the intermediate substrate 1100, the resonator die 1000 can be integrated with the first optical package 900 in an achievable form without problems such as improper alignment with the laser die. In this way, the first optical package 900 can be equipped with a frequency comb generation source using a reliable process that does not shorten the product operating life.

[0141] Figure 12A and Figure 12B shows a cross-sectional view ( Figure 12A ) and a top view ( Figure 12B ) of another embodiment, in which the cavity ring 1009 is not fabricated within the resonator die 1000 but is formed within the intermediate substrate 1100, such as by being formed as one of the seventh optical components 1121. In such an embodiment, for example, a material for the cavity ring 1009 (e.g., lithium niobate) is deposited and patterned using a process and materials similar to those described above with respect to Figure 10A and Figure 10B to form part of the fourth bonding layer 1109. For example, the material for the cavity ring 1009 is deposited before or after other seventh optical components 1121 have been formed within the fourth bonding layer 1109 and patterned. Once all the seventh optical components 1121 and the cavity ring 1009 have been formed, a third dielectric material 1119 can be deposited, electrodes 1015 can be formed, and at the same time, fourth bonding pads 1111 (and any desired vias for connecting the fourth bonding pads 1111 to the underlying third metallization layer 1105) and fifth bonding pads 1115 can be formed. However, any suitable method and materials can be utilized.

[0142] Once the cavity ring 1009, electrodes 1015, and fourth bonding pads 1017 have been formed, the first optical package 900 can be bonded to the fourth bonding layer 1109. In a particular embodiment, the first optical package 900 can be bonded as described above with respect to Figure 11A , such as dielectric-to-dielectric and metal-to-metal bonding. However, in this embodiment, the third bonding pad 909 of the first optical package 900 is bonded not only to the fifth bonding pad 1115 (of the intermediate substrate 1100) but also to the fourth bonding pad 1017 (which is located within the intermediate substrate 1100 in this embodiment). However, any suitable bonding process can be utilized.

[0143] By fabricating the cavity ring 1009 within the fourth bonding layer 1109, all the benefits of using the cavity ring 1009 can be obtained without the need to use a separate die (e.g., the resonator die 1000). In this way, the separate bonding process for the resonator die 1000 can be avoided, while also allowing for a reduction in the overall size of the device.

[0144] Figure 13A Shows yet another embodiment, in which the resonator die 1000 is bonded together with the first optical package 900 to the interposer substrate 1100 (similar to the embodiment shown above Figure 11A ). However, in this embodiment, the laser die 1300 is additionally bonded to the interposer substrate 1100 in order to provide power to the optical device, instead of the interposer substrate 1100 receiving light from the outside. In some embodiments, the laser die 1300 may include a light generating structure, such as one or more laser diodes 1301 surrounded by a dielectric and / or cladding material over the substrate. In a particular embodiment, the laser diode may be a Fabry - Perot diode and may be based on III - V materials, II - VI materials, or any other suitable material group.

[0145] In a particular embodiment, one or more laser diodes 1301 may include a first contact, a first buffer layer, a first active diode layer including multiple quantum wells (MQW), a second buffer layer, and a second contact (only some of which are described for clarity, as Figure 13A shown) to generate the desired light. Additionally, the generated light may be output from the laser die 1300 through, for example, the first contact and an associated waveguide. However, any suitable structure may be utilized to form one or more laser diodes 1301 and generate the desired light.

[0146] Additionally, the laser die 1300 may further include a second external connector 1303. In one embodiment, the second external connector 1303 may be similar to the third bonding pad 909, such as a contact pad. However, any suitable material and connection shape may also be used.

[0147] Once the laser die 1300 has been formed and / or otherwise received, the laser die 1300 can be bonded to the interposer substrate 1100. In one embodiment, dielectric - to - dielectric and metal - to - metal bonding can be used, similar to the bonding process described above with reference to Figure 11A to bond the laser die 1300 to the interposer substrate 1100. However, any suitable bonding process may be utilized.

[0148] In this embodiment, instead of receiving light from outside the device, the desired light is generated by the laser die 1300 and coupled into the intermediate substrate 1100. The intermediate substrate 1100 receives the light and transmits it into the resonant cavity die 1000, where the cavity ring 1009 modulates the light generated by the laser die 1300 and returns the modulated light to the intermediate substrate 1100. Then, the intermediate substrate 1100 transmits the modulated light to the first optical package 900. In this way, light can be generated on the first optical package 900, and the resonant cavity die 1000 can be integrated with the laser die 1300, and the device receives less light (and associated losses) generated outside the device.

[0149] Figure 13B Another embodiment is shown in which the laser die 1300 is bonded to the intermediate substrate 1100. However, in this embodiment, the resonant cavity die 1000 is not utilized, and the cavity ring 1009 is formed within the seventh optical component 1121 as part of the intermediate substrate 1100. Specifically, as referred to above with reference to Figure 12A and Figure 12B described, the cavity ring 1009 is formed within the fourth bonding layer 1109. However, any suitable manufacturing and materials can be utilized.

[0150] Once the cavity ring 1009 has been formed within the fourth bonding layer 1109 of the intermediate substrate 1100, the first optical package 900 and the laser die 1300 are bonded to the intermediate substrate 1100. In one embodiment, for example, as described above with reference to Figure 11A described, dielectric-to-dielectric and metal-to-metal bonding processes can be used to bond the first optical package 900 and the laser die 1300. However, any suitable bonding process can be utilized.

[0151] Figure 14A and Figure 14B Another embodiment of the resonant cavity die 1000 is shown. However, in this embodiment, instead of using a material (e.g., lithium niobate) that can trigger second-order nonlinearity in the received light for the cavity ring 1009, a material that can trigger third-order nonlinearity without an electrical driving mechanism (e.g., the electrode 1015) is used. In a particular embodiment, the material capable of triggering third-order nonlinearity can be a material such as silicon nitride or the like. However, any suitable material can be used.

[0152] To begin forming the cavity ring 1009 in this embodiment, a deposition process such as physical vapor deposition, chemical vapor deposition, atomic layer deposition, a combination thereof, or a similar process can be used to initially deposit a material (e.g., silicon nitride). In a particular embodiment, the material can be deposited in an amorphous state. However, any suitable material, method, and state can be utilized.

[0153] Once the material has been deposited, the material can be patterned into the shape of the cavity ring 1009 (e.g., annular) and the associated first waveguide 1011. In one embodiment, a photolithographic mask and an etching process can be used to pattern the material. However, any suitable patterning method can be utilized.

[0154] Once the cavity ring 1009 and the associated first waveguide 1011 have been formed, any other desired optical devices can be formed. In one embodiment, processes and materials similar to those of the second optical component 503 can be used to form the other optical devices. However, any suitable processes and materials can be utilized.

[0155] Once the cavity ring 1009, the associated first waveguide 1011, and any other desired optical devices have been formed, a cladding layer 1013 and a fourth bonding pad 1017 can be formed. In one embodiment, as described above with reference to Figure 10A the cladding layer 1013 and the fourth bonding pad 1017 are formed. However, any suitable methods and materials can be utilized.

[0156] Figure 14C Shown is that once the resonator die 1000 has been formed from a material (e.g., silicon nitride) that can trigger third-order nonlinearity without an electrical driving mechanism, the resonator die 1000 is bonded together with the intermediate substrate 1100 to the first optical package 900. In one embodiment, as described above with respect to Figure 11A the resonator die 1000 can be bonded, such as dielectric-to-dielectric and metal-to-metal bonding. However, any suitable bonding process can be utilized.

[0157] Figure 15A Another embodiment is shown that utilizes the resonator die 1000, and the resonator die 1000 has a material (e.g., silicon nitride) that can trigger third-order nonlinearity without an electrical driving mechanism. In this embodiment, the resonator die 1000 and the first optical package 900 are bonded together with the laser die 1300 to the intermediate substrate 1100. In one embodiment, as described above with respect to Figure 11A the laser die 1300 can be bonded to the intermediate substrate using, for example, dielectric-to-dielectric and metal-to-metal bonding processes. However, any suitable bonding process can be utilized.

[0158] Figure 15B shows another embodiment in which the cavity ring 1009 has a material (e.g., silicon nitride) that can trigger third-order nonlinearity without an electrical driving mechanism, rather than being fabricated within the resonator die 1000, and is formed as one of the seventh optical components 1121 within the intermediate substrate 1100. In such an embodiment, the cavity ring 1009, for example, is formed as part of the fourth bonding layer 1109 using a process and materials similar to those described above with reference to Figure 14A and Figure 14B The material for the cavity ring 1009 (e.g., silicon nitride) is deposited and patterned after or before the other optical components in the seventh optical component 1121 have been formed within the fourth bonding layer 1109. However, any suitable method and materials can be utilized.

[0159] However, since the material that can trigger third-order nonlinearity without an electrical driving mechanism can be formed to a different thickness than the other optical components in the seventh optical component 1121, the material that can trigger third-order nonlinearity can be deposited and patterned on a different layer than the other optical components in the seventh optical component 1121. In other embodiments, the cavity ring 1009 and the rest of the seventh optical component 1121 can be formed in a single layer, thereby forming the components in a sequential manufacturing process. All such combinations of manufacturing process steps are fully intended to be included within the scope of the embodiments.

[0160] Once the cavity ring 1009 has been formed as one of the seventh optical components, the third bonding pad 909 can be formed, and the first optical package 900 can be bonded to the fourth bonding layer 1109. In a particular embodiment, the third bonding pad 909 can be formed as described above with reference to Figure 9 and the first optical package 900 can be bonded as described above with reference to Figure 11A such as dielectric-to-dielectric and metal-to-metal bonding. However, in this embodiment, since the cavity ring 1009 is formed of a material that can trigger third-order nonlinearity and does not require an electrical driving mechanism, the electrodes 1015 and the fourth bonding pad 1017 are not formed. As such, the third bonding pad 909 of the first optical package 900 is not bonded to the fourth bonding pad 1017 (since the fourth bonding pad is not formed).

[0161] Figure 15CAnother embodiment is shown in which the laser die 1300 is bonded to the interposer substrate 1100. However, in this embodiment, the resonator die 1000 is not used, and a cavity ring 1009 having a material (e.g., silicon nitride) that can trigger third-order nonlinearity without an electrical driving mechanism is formed as part of the interposer substrate 1100. Specifically, the cavity ring 1009 is formed within the fourth bonding layer 1109, as described above with reference to Figure 14C However, any suitable manufacturing and materials can be utilized.

[0162] Once the cavity ring 1009 has been formed within the fourth bonding layer 1109 of the interposer substrate 1100, the first optical package 900 and the laser die 1300 are bonded to the interposer substrate 1100. In one embodiment, dielectric-to-dielectric and metal-to-metal bonding processes, such as those described above with reference to Figure 11A can be used to bond the first optical package 900 and the laser die 1300. However, any suitable bonding process can be utilized.

[0163] By utilizing the structures and methods proposed herein, a frequency comb generation architecture can be incorporated into a co-packaging photonics (CPO) construction, for example, using evanescent coupling. Additionally, different materials can be leveraged in the fabrication of the frequency comb generation architecture. In this way, a more compact unit with better performance can be obtained.

[0164] In one embodiment, a method of manufacturing an optical device includes: forming a resonant ring die; bonding the resonant ring die to an interposer substrate; and bonding a first optical package to the interposer substrate. In one embodiment, the resonant ring die includes a cavity ring, and the cavity ring includes lithium niobate. In one embodiment, the resonant ring die includes a cavity ring, and the cavity ring includes silicon nitride. In one embodiment, the silicon nitride includes amorphous silicon nitride. In one embodiment, bonding the resonant ring die to the interposer substrate uses a dielectric-to-dielectric and a metal-to-metal bond. In one embodiment, forming the resonant ring die further includes: depositing lithium niobate; patterning the lithium niobate into a ring shape; and forming an electrode adjacent to the ring. In one embodiment, the manufacturing method further includes bonding a laser die to the interposer substrate.

[0165] In another embodiment, a method of manufacturing an optical device includes: forming a bonding layer over a semiconductor substrate, and the bonding layer includes a cavity ring and a first contact pad; and bonding a first optical package to the first contact pad. In one embodiment, the cavity ring includes lithium niobate. In one embodiment, the cavity ring includes silicon nitride. In one embodiment, the cavity ring includes amorphous silicon nitride. In one embodiment, the manufacturing method further includes bonding a laser die to the first contact pad. In one embodiment, forming the bonding layer further includes: depositing lithium niobate; patterning the lithium niobate into a ring shape; and forming an electrode adjacent to the ring. In one embodiment, bonding the first optical package to the first contact pad uses a dielectric-to-dielectric and a metal-to-metal bond.

[0166] In yet another embodiment, an optical device includes a first optical package and a cavity ring. The first optical package is located over and bonded to an interposer substrate, and the interposer substrate includes a semiconductor substrate. The cavity ring is located over the semiconductor substrate. In one embodiment, the cavity ring is located within a bonding layer of the interposer substrate. In one embodiment, the cavity ring is located within a cavity resonant die, and the cavity resonant die is bonded to the interposer substrate. In one embodiment, the cavity ring includes lithium niobate. In one embodiment, the cavity ring includes amorphous silicon nitride. In one embodiment, the optical device further includes a laser die bonded to the interposer substrate.

[0167] The foregoing disclosure outlines the components of multiple embodiments, enabling those skilled in the art to better understand the manner of the embodiments of the present utility model. Those skilled in the art will understand that they can easily design or modify other processes and structures based on the embodiments of the present utility model and thereby achieve the same purposes and / or the same advantages as the embodiments introduced herein. Those skilled in the art should also understand that these equivalent configurations do not depart from the spirit and scope of the embodiments of the present utility model, and various changes, substitutions, or replacements can be made to the embodiments of the present utility model without departing from the spirit and scope of the embodiments of the present utility model.

Claims

1. An optical device, characterized in that: include: a first optical package, located on and bonded to an intermediate substrate, wherein the intermediate substrate includes a semiconductor substrate; and A cavity ring is located on the semiconductor substrate.

2. The optical device according to claim 1, characterized in that The cavity ring is located within a bonding layer of the interposer substrate.

3. The optical device according to claim 2, characterized in that The bonding layer of the intermediate substrate further includes a first contact pad, and the first optical package further includes a second contact pad, and the second contact pad is bonded to the first contact pad.

4. The optical device according to claim 1, wherein The cavity ring is located in a cavity resonant crystal grain, and the cavity resonant crystal grain is bonded to the intermediate substrate.

5. The optical device according to claim 4, characterized in that The cavity resonance crystal grain further includes a waveguide, and the intermediate substrate further includes an optical component, and the optical component and the cavity ring are optically connected through the waveguide.

6. The optical device according to claim 5, characterized in that The cavity resonance crystal grain further includes a cladding layer, and the cladding layer covers the cavity ring and the waveguide.

7. The optical device according to claim 6, characterized in that The cavity resonance crystal grain further includes an electrode and a bonding pad, wherein the electrode is connected to the bonding pad, and the bonding pad is at least partially within the cladding layer.

8. The optical device according to claim 7, characterized in that The intermediate substrate further includes a first contact pad, the first optical package further includes a second contact pad, the bonding pad of the cavity resonance crystal grain is bonded to the first contact pad, and the second contact pad is bonded to the first contact pad.

9. The optical device according to claim 1, wherein: Also included is a laser die bonded to the interposer substrate.

10. The optical device according to claim 1, wherein: The intermediate substrate further includes a metallization layer and an external connector. The metallization layer is disposed on the semiconductor substrate, and the external connector is disposed on the metallization layer.

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