Semiconductor ion implantation equipment
By introducing magnets and grating positioners into semiconductor ion implantation equipment, using magnetic fields to act on the implanted ions and accurately adjust their position, the problem that existing equipment cannot accurately control the ion implantation depth, and the precise control of the implantation depth and the expansion of the application range are achieved.
Patent Information
- Application Number
- CN202421929036.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-09
- Publication Date
- 2025-06-17
- Estimated Expiration
- 2034-08-09
AI Technical Summary
Existing semiconductor ion implantation devices cannot accurately control the depth of ion implantation, resulting in the implantation distance exceeding the expected depth, which may lead to electrical conversion of components.
A semiconductor ion implantation device is designed, including a carrier disk, a magnet and a grating positioner. The magnet provides a magnetic field, which causes the implanted ions to rotate under the influence of magnetic field force inside the wafer, reducing the probability of downward movement, thereby controlling the depth of ion implantation. The grating positioner is used to adjust the position between the bearing disk and the magnetic field with high precision and adjust the area affected by the magnetic field by the wafer.
It realizes precise control of the depth of ion implantation, reduces the probability of implanted ions moving downward, meets process requirements, and expands the scope of application.
Smart Images
Figure CN222995349U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the field of semiconductor equipment and relates to a semiconductor ion implantation device. Background Art
[0002] Ion Implantation (IPM) is an advanced material doping technology widely used in the manufacture of semiconductor devices. The basic principle of ion implantation is to convert a specific element (called a dopant) into a gaseous form, and then convert it into a positively charged ion through an ionization source (such as a plasma source). The generated ion beam is introduced into an acceleration system, and the ion beam is accelerated by an electric field. The accelerated ion beam accurately aims and impacts the surface of a semiconductor wafer at a high energy state. Among them, the high-speed moving ions pass through the lattice structure of the material until their energy is exhausted and they are embedded in the lattice to form a doped layer.
[0003] In the lattice of the wafer material to be ion implanted, atoms are regularly arranged in the spatial structure. When the high-speed moving ions are implanted along the main crystal axis direction of the crystal, they will collide with the lattice atoms, mainly including three states: random collision, channeling collision, and backscattering collision. Among them, when the ions in the channeling collision pass near the same row of atoms in the lattice, they can penetrate into the solid to a deeper distance, and this phenomenon is called the channeling phenomenon.
[0004] With the continuous reduction of the size of semiconductor devices and the existence of the channeling phenomenon, it becomes more and more difficult to control the depth of implanted ions, which brings trouble to the manufacture of high-quality integrated circuits. For example, when ions are directly implanted into a wafer, the implanted ions will collide with silicon (Si) atoms or germanium (Ge) atoms until they stop moving, so that the implanted ions are quasi-normally distributed in the wafer in the vertical direction. Among them, when it is desired that the implanted ions stay at a depth of 1 nm in the wafer, in fact, the implanted ions will be distributed between 0 and 5 nm in depth in the wafer. Therefore, the existing semiconductor ion implantation devices cannot accurately control the depth of ion implantation. When the ion implantation distance exceeds the expected depth, it may lead to an electrical conversion (shift) of the device components.
[0005] Therefore, it is necessary to provide a semiconductor ion implantation device. Summary of the Utility Model
[0006] In view of the above-mentioned disadvantages of the prior art, the purpose of the present utility model is to provide a semiconductor ion implantation device for solving the problem that it is difficult to control the depth of ion implantation in the prior art.
[0007] To achieve the above and other related purposes, the present utility model provides a semiconductor ion implantation device, which includes:
[0008] A carrier plate for carrying wafers;
[0009] A magnet located outside the carrier plate for providing a magnetic field;
[0010] A grating positioning member connected to the carrier plate for changing the position between the carrier plate and the magnetic field.
[0011] Optionally, it further includes a magnetic shielding member in contact with the magnet.
[0012] Optionally, the magnetic shielding member includes a permalloy magnetic shielding member or a stainless steel magnetic shielding member.
[0013] Optionally, the projection area of the magnetic shielding member completely covers the magnet.
[0014] Optionally, the magnet includes an electromagnet.
[0015] Optionally, the magnetic field range provided by the magnet includes an area with a length L of 200 mm ≤ L ≤ 400 mm, a width W of 200 mm ≤ W ≤ 400 mm, and a depth D of 30 mm ≤ D ≤ 100 mm.
[0016] Optionally, the range of the magnetic induction intensity B provided by the magnet is 0 Gs < B ≤ 10 Gs.
[0017] Optionally, the shape of the magnet includes an arc or a strip.
[0018] Optionally, the moving mode of the grating positioning member includes chain movement or slide rail movement.
[0019] Optionally, the grating pitch in the grating positioning member is 15 nm.
[0020] As described above, the semiconductor ion implantation device of the present utility model includes the carrier plate, the magnet, and the grating positioning member. The carrier plate is used to carry wafers; the magnet is located outside the carrier plate to provide a magnetic field; the grating positioning member is connected to the carrier plate to change the position between the carrier plate and the magnetic field.
[0021] For the semiconductor ion implantation equipment of the present utility model, the magnetic field can be provided through the arrangement of the magnet, so that the implanted ions can rotate under the action of the magnetic field force inside the wafer, reducing the probability of downward movement, thereby controlling the ion implantation depth and achieving precise control of the ion implantation depth; through the arrangement of the grating positioning member, high-precision and high-reliability position adjustment between the carrier plate and the magnetic field can be realized, and then the magnetic field influence area received by the wafer can be conveniently adjusted to meet the process requirements and expand the application range. Brief Description of the Drawings
[0022] Figure 1 It shows a schematic structural diagram of the semiconductor ion implantation equipment in the embodiment of the present utility model.
[0023] Figure 2 It shows a schematic diagram of the ion movement trajectory during ion implantation of the semiconductor ion implantation equipment in the prior art.
[0024] Figure 3 It shows a schematic diagram of the ion movement trajectory during ion implantation of the semiconductor ion implantation equipment in the present utility model.
[0025] Figure 4 It shows a SIMS comparison diagram obtained after performing Rp = 15nm ion implantation using the existing semiconductor ion implantation equipment and the semiconductor ion implantation equipment in the present embodiment.
[0026] Figure 5 It shows a SIMS comparison diagram obtained after performing Rp = 50nm ion implantation using the existing semiconductor ion implantation equipment and the semiconductor ion implantation equipment in the present embodiment.
[0027] Description of the Reference Numerals
[0028] 100 Carrier plate
[0029] 200 Magnet
[0030] 300 Grating positioning member
[0031] 400 Magnetic shielding member
[0032] 500 Wafer Detailed Embodiments
[0033] The following specific examples illustrate the embodiments of the present utility model. Those skilled in the art can easily understand the other advantages and effects of the present utility model from the content disclosed in this specification. The present utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present utility model.
[0034] It should be noted that the illustrations provided in this embodiment only schematically illustrate the basic concept of the present utility model. Therefore, only the components related to the present utility model are shown in the drawings, rather than being drawn according to the number, shape, and size of the components in actual implementation. The type, quantity, and proportion of each component in actual implementation can be arbitrarily changed, and the component layout type may also be more complex.
[0035] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative efforts belong to the scope of protection of the present application.
[0036] Referring to Figure 1 , this embodiment provides a semiconductor ion implantation device. The semiconductor ion implantation device includes a carrier plate 100, a magnet 200, and a grating positioning member 300. Among them, the carrier plate 100 is used to carry a wafer 500; the magnet 200 is located outside the carrier plate 100 and is used to provide a magnetic field; the grating positioning member 300 is connected to the carrier plate 100 and is used to change the position between the carrier plate 100 and the magnetic field provided by the magnet 200.
[0037] In the semiconductor ion implantation device of the present utility model, the magnetic field can be provided through the setting of the magnet 200, so that the implanted ions can rotate under the action of the magnetic field force inside the wafer 500, reducing the probability of downward movement, thereby controlling the ion implantation depth and achieving precise control of the ion implantation depth; through the setting of the grating positioning member 300, high-precision and high-reliability position adjustment between the carrier plate 100 and the magnetic field can be achieved, and then the magnetic field influence area received by the wafer 500 can be conveniently adjusted to meet the process requirements and expand the application range.
[0038] Specifically, the type of the carrier plate 100 can be selected such as a vacuum chuck, an electrostatic chuck, etc., and there is no excessive limitation here. Among them, the size of the wafer 500 carried on the carrier plate 100 can include, for example, 6 inches, 8 inches, 12 inches, etc., and there is no excessive limitation here.
[0039] When the wafer 500 undergoes an ion implantation process in the process chamber, as Figure 2 and Figure 3 shown, ions are implanted into the wafer 500 from top to bottom. Among them, the implantation depth is related to the implantation energy and can be selected according to needs. When the semiconductor ion implantation device is not provided with the magnet 200, as Figure 2, channeling occurs for the implanted ions, that is, outside the expected implantation depth Rp range, there are also implanted ions, such as Figure 4 in which Curve A shows the SIMS (Secondary Ion Mass Spectrometry) diagram obtained after ion implantation when Rp = 15 nm, and refer to Figure 5 in which Curve A shows the SIMS diagram obtained after ion implantation when Rp = 50 nm. From Figure 2 , Figure 4 , Figure 5 it can be seen that it is difficult to precisely control the depth of implanted ions.
[0040] Refer to Figure 1 and Figure 3 , when the magnet 200 is arranged outside the carrier plate 100, the magnet 200 can provide the magnetic field, so that the implanted ions will be interfered by the magnetic field and be affected by the Lorentz force (F) to generate rotation and change the movement direction. Among them, the direction of the Lorentz force F can be judged by the left-hand rule. The specific operation is to stretch out the left hand, make the thumb perpendicular to the other four fingers, and all in the same horizontal plane as the palm. Let the magnetic induction line enter from the palm, the four fingers point to the direction of the positive charge movement, and the direction pointed by the thumb is the direction of the Lorentz force. Based on this principle, the implanted ions can be made to be outside the expected implantation depth Rp range. Due to the action of the magnetic field force inside the wafer 500, the probability of the implanted ions moving downward can be reduced, thereby controlling the ion implantation depth and achieving precise control of the ion implantation depth. Such as Figure 4 in which Curve B shows the SIMS diagram obtained after ion implantation when Rp = 15 nm, and refer to Figure 5 in which Curve B shows the SIMS diagram obtained after ion implantation when Rp = 50 nm. From Figure 3 , Figure 4 , Figure 5 it can be seen that the semiconductor ion implantation equipment in this embodiment can precisely control the depth of implanted ions.
[0041] Among them, to realize the adjustment of the position between the carrier plate 100 and the magnetic field, in this embodiment, it is preferably to connect the grating positioning member 300 with the carrier plate 100. Thus, the carrier plate 100 can be displaced with high precision and high reliability through the grating positioning member 300, including upward displacement adjustment and downward displacement adjustment operations, so as to change the position between the carrier plate 100 and the magnetic field, thereby conveniently adjusting the magnetic field influence area received by the wafer 500 to meet the process requirements and expand the application range. The specific structure of the grating positioning member 300 is not limited here, and the existing grating positioning members can be referred to.
[0042] As an example, the grating pitch in the grating positioning member 300 can include 15 nm, but is not limited thereto, and can be specifically selected according to needs.
[0043] Specifically, as Figure 5 shown, when boron (B) is implanted into silicon (Si) material at an energy of 20 keV, the implantation depth is approximately When each grating pitch is 15 nm, the carrier disk 100 can be stopped at the 4th grating position by adjusting the grating positioning member 300, that is, by changing the position of the wafer 500 and the magnetic field, so that the area of the wafer 500 affected by the magnetic field is near the depth, so that beyond After the depth, the implanted ions no longer continue to move solely into the interior of the wafer 500, but instead increase the probability of colliding with Si atoms at the same layer depth by rotating, so as to stay near the depth. The choice of the grating pitch in the grating positioning member 300 is not limited to 15 nm, and can be specifically selected according to needs.
[0044] As an example, the moving manner of the grating positioning member 300 may include chain movement or slide rail movement, which can be specifically selected according to needs.
[0045] As an example, the magnet 200 may include an electromagnet.
[0046] Specifically, the magnet 200 is mainly provided to generate the magnetic field that enables the implanted ions to generate Lorentz force, so as to change the moving direction of the implanted ions inside the wafer 500. In this embodiment, the magnet 200 is preferably an electromagnet, so as to conveniently realize the regulation of the magnetic field through the electromagnet. There is no excessive limitation on the type of the magnet 200 here.
[0047] As an example, the magnetic field range provided by the magnet 200 may include a region with a length L of 200 mm ≤ L ≤ 400 mm, a width W of 200 mm ≤ W ≤ 400 mm, and a depth D of 30 mm ≤ D ≤ 100 mm.
[0048] Specifically, according to needs, the magnetic field range provided by the magnet 200 may include regions with a length L of 200 mm, 300 mm, 400 mm, etc., a width W of 200 mm, 300 mm, 400 mm, etc., and a depth D of 30 mm, 50 mm, 80 mm, 100 mm, etc., so as to be applicable to wafers 500 of different sizes and expand the application range. There is no excessive limitation on the magnetic field range provided by the magnet 200 here.
[0049] As an example, the range of the magnetic induction intensity B provided by the magnet 200 may be 0 Gs < B ≤ 10 Gs, such as 2 Gs, 4 Gs, 5 Gs, 8 Gs, 10 Gs, etc., to meet the process requirements. There is no excessive limitation here.
[0050] As an example, the morphology of the magnet 200 may include, such as, an arc shape or a bar shape, etc. In this embodiment, such as Figure 3 only the bar-shaped magnet 200 is taken as an example, but the morphology of the magnet 200 is not limited thereto, and it may also be, such as, an arc shape, etc., and the direction of the magnetic field can be adjusted by changing the placement position of the magnet 200.
[0051] As an example, it may further include a magnetic shielding member 400 in contact with the magnet 200.
[0052] Specifically, such as Figure 1 as shown, in this embodiment, the magnetic shielding member 400 is provided below the magnet 200, so that through the setting of the magnetic shielding member 400, the unnecessary magnetic field can be shielded. Regarding the position setting of the magnetic shielding member 400, it is not limited thereto.
[0053] Among them, the magnetic shielding member 400 may include a permalloy magnetic shielding member, such as a permalloy containing 80% Ni and 20% Fe, or the magnetic shielding member 400 is a stainless steel magnetic shielding member. The type of the magnetic shielding member 400 is not overly restricted here.
[0054] As an example, the projection area of the magnetic shielding member 400 preferably completely covers the magnet 200, that is, preferably the magnetic shielding member 400 has the same morphology as the magnet 200, but the morphology of the magnetic shielding member 400 is not limited thereto.
[0055] In summary, the semiconductor ion implantation device of the present invention includes the carrier plate, the magnet and the grating positioning member. The carrier plate is used to carry the wafer; the magnet is located outside the carrier plate and is used to provide a magnetic field; the grating positioning member is connected to the carrier plate and is used to change the position between the carrier plate and the magnetic field.
[0056] The semiconductor ion implantation device of the present invention can provide the magnetic field through the setting of the magnet, so that the implanted ions can rotate under the action of the magnetic field force inside the wafer, reducing the probability of moving downward, thereby controlling the ion implantation depth and achieving precise control of the ion implantation depth; through the setting of the grating positioning member, high-precision and high-reliability position adjustment between the carrier plate and the magnetic field can be realized, and then the magnetic field influence area received by the wafer can be conveniently adjusted to meet the process requirements and expand the application range. Therefore, the present invention effectively overcomes various disadvantages in the prior art and has high industrial utilization value.
[0057] The above embodiments are only illustrative of the principles and effects of the present utility model, and are not intended to limit the present utility model. Any person familiar with this technology can modify or change the above embodiments without departing from the spirit and scope of the present utility model. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed by the present utility model should still be covered by the claims of the present utility model.
Claims
1. A semiconductor ion implantation device, characterized in that: The semiconductor ion implantation equipment comprises: A carrier plate, the carrier plate is used to carry the wafer; A magnet, located outside the carrier plate, for providing a magnetic field; A grating positioning member is connected to the carrier plate and is used to change the position between the carrier plate and the magnetic field.
2. The semiconductor ion implantation device according to claim 1, characterized in that: Also included is a magnetic shield in contact with the magnet.
3. The semiconductor ion implantation device according to claim 2, characterized in that: The magnetic shielding component includes a permalloy magnetic shielding component or a stainless steel magnetic shielding component.
4. The semiconductor ion implantation device according to claim 2, characterized in that: The projection area of the magnetic shield completely covers the magnet.
5. The semiconductor ion implantation device according to claim 1, characterized in that: The magnet comprises an electromagnet.
6. The semiconductor ion implantation device according to claim 1, characterized in that: The magnetic field range provided by the magnet includes an area with a length L of 200mm≤L≤400mm, a width W of 200mm≤W≤400mm, and a depth D of 30mm≤D≤100mm.
7. The semiconductor ion implantation device according to claim 1, characterized in that: The range of the magnetic induction intensity B provided by the magnet is 0Gs<B≤10Gs.
8. The semiconductor ion implantation device according to claim 1, characterized in that: The magnet may be in an arc shape or a bar shape.
9. The semiconductor ion implantation device according to claim 1, characterized in that: The moving mode of the grating positioning member includes chain movement or slide rail movement.
10. The semiconductor ion implantation device according to claim 1, characterized in that: The grating pitch in the grating positioning element is comprised of 15 nm.