Ultrahigh-purity graphite heating element for semiconductor

Abstract

The utility model discloses an ultra-pure graphite heating element for semiconductors, which belongs to the field of graphite processing, and comprises an S-shaped heating plate and two electrode plates, the two ends of the S-shaped heating plate face opposite directions, the two electrode plates are respectively arranged at the two ends of the S-shaped heating plate, one end of the surface of each electrode plate is provided with a mounting butt joint hole, and the other end of the surface of each electrode plate is provided with a mounting butt joint hole. Limiting tables are symmetrically arranged at the end, close to the mounting butt-joint hole, of the surface of one side of the electrode plate, the two limiting tables are arranged on the two sides of the limiting tables correspondingly, butt-joint bolts are arranged at the two ends of the S-shaped heating plate correspondingly, and the butt-joint bolts are matched with the interior size of the mounting butt-joint hole; the end of the S-shaped heating plate is arranged between the two limiting tables, the S-shaped heating plate and the motor plates at the two ends are installed in a split mode so that transportation can be facilitated, the S-shaped heating plate and the motor plates at the two ends can be rapidly assembled in the using process, the stability of the suspended electrode plate is improved through a stabilizing mechanism, and an extending plate is arranged at the end, away from suspension, of the electrode plate.

Description

Technical Field

[0001] The utility model relates to the field of graphite processing, and more specifically to an ultra-high purity graphite heating element for semiconductors. Background Art

[0002] Graphite and its products have excellent properties such as low resistivity, low expansion coefficient, high strength acid resistance, corrosion resistance, high temperature resistance and low temperature resistance, and are widely used in many fields such as metallurgy, machinery, physics, aviation, etc. At the same time, graphite is often used as a heating element in the vacuum high-temperature metallurgy industry to obtain a high-temperature field, and is also often used in the semiconductor field. Traditional graphite heating elements mainly include graphite rods, graphite plates, graphite crucibles, etc., most of which are one-piece structures. In order to ensure uniform heat dissipation, most graphite plates adopt an S-shaped line direction. Therefore, during processing, the entire graphite plate needs to be cut to form an S-shaped heating plate and electrode plates at both ends. In order to facilitate the installation of the electrode plate, the thickness of the electrode plate is often greater than the heating plate. The S-shaped route of the one-piece structure leads to limited strength of the entire heating element. It needs to be strictly protected during transportation, otherwise it may break due to collisions, and the electrode plate and the heating plate can only be connected through the ends, which means that most of the electrode plate is suspended in the horizontal state, which greatly reduces the strength of the heating element. Utility Model Content

[0003] 1. Technical issues to be solved

[0004] In view of the problems existing in the prior art, the purpose of the utility model is to provide an ultra-high purity graphite heating element for semiconductors, which can realize the S-shaped heating plate and the plates at both ends to be transported separately, and then assembled when in use, and ensure the strength of the joints after assembly.

[0005] 2. Technical solution

[0006] To solve the above problems, the utility model adopts the following technical solutions.

[0007] An ultra-high purity graphite heating element for semiconductors comprises an S-shaped heating plate and an electrode plate, wherein two electrode plates are provided, and the two ends of the S-shaped heating plate face oppositely, and the two electrode plates are respectively placed at the two ends of the S-shaped heating plate, and a mounting docking hole is provided at one end of the surface of the electrode plate, and a limiting platform is symmetrically provided at one end of the surface of one side of the electrode plate near the mounting docking hole, and the two limiting platforms are respectively placed on both sides of the limiting platforms, and docking bolts are provided at both ends of the S-shaped heating plate, and the docking bolts are adapted to the internal dimensions of the mounting docking hole, and the end of the S-shaped heating plate is placed between the two limiting platforms, and an extension plate is provided at the end of the electrode plate near the mounting docking hole, and the extension plate is suspended on the outside, and a through groove is provided at the end of the extension plate facing away from the electrode plate, and a stabilizing mechanism is also provided at the connection between the S-shaped heating plate and the electrode plate.

[0008] Furthermore, the stabilizing mechanism comprises a sliding sleeve sliding on the surface of the S-shaped heating plate, a locking bolt is screwed on one side of the sliding sleeve, and the sliding sleeve is fixed to the S-shaped heating plate through the locking bolt.

[0009] Furthermore, an extension platform is arranged on the outer side of one end of the sliding sleeve close to the electrode plate, and the position of the extension platform corresponds to that of the extension plate.

[0010] Furthermore, a pull rod is vertically arranged on one side surface of the extension platform close to the electrode plate, and the pull rod passes through the through slot. A limiting cross bar is symmetrically arranged on the end of the pull rod away from the extension platform, and the limiting cross bar is placed on the side surface of the extension plate away from the extension platform. The two limiting cross bars span across the two ends of the through slot.

[0011] Furthermore, an internal threaded hole matched with a locking bolt is provided on the surface of the S-shaped heating plate.

[0012] Furthermore, a circuit docking hole is provided on one end of the surface of the electrode plate away from the extension plate.

[0013] 3. Beneficial effects

[0014] Compared with the prior art, the advantages of the utility model are: the utility model provides an ultra-high purity graphite heating element for semiconductors, the S-shaped heating plate and the motor plates at both ends are installed in a split manner to facilitate transportation, the two can be quickly assembled during use, and the stability of the suspended electrode plate is increased by a stabilizing mechanism, an extension plate is provided at the end of the electrode plate away from the suspension, and the extension plate can be pulled by a pull rod to ensure that the force on both ends of the electrode plate is uniform and the risk of breakage is reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a schematic diagram of the installation three-dimensional structure of the utility model;

[0016] Figure 2 This is a schematic diagram of the separation structure of the heating plate and the electrode plate of the utility model;

[0017] Figure 3 For the utility model Figure 2 A schematic diagram of the enlarged structure of area A;

[0018] Figure 4 It is a schematic diagram of the sliding sleeve structure of the utility model.

[0019] Explanation of the numbers in the figure: 1. S-shaped heating plate; 11. Docking bolt; 2. Electrode plate; 21. Circuit docking hole; 22. Installation docking hole; 23. Limiting platform; 24. Extension plate; 25. Through groove; 3. Sliding sleeve; 31. Locking bolt; 32. Extension platform; 33. Pull rod; 34. Limiting cross bar. DETAILED DESCRIPTION

[0020] The technical solutions in the embodiments of the present utility model will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present utility model; obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present utility model.

[0021] Embodiment:

[0022] Please refer to Figures 1-3 As shown, the ultra-high purity graphite heating element for semiconductors includes an S-shaped heating plate 1 and electrode plates 2. There are two electrode plates 2. The two ends of the S-shaped heating plate 1 face in opposite directions. The two electrode plates 2 are respectively placed at both ends of the S-shaped heating plate 1. One end of the surface of the electrode plate 2 is provided with a mounting docking hole 22. On one side surface of the electrode plate 2, a limiting platform 23 is symmetrically arranged near one end of the mounting docking hole 22. The two limiting platforms 23 are respectively placed on both sides of the limiting platform 23. Docking bolts 11 are arranged at both ends of the S-shaped heating plate 1. The internal dimensions of the docking bolts 11 are mutually adapted to those of the mounting docking hole 22. The end of the S-shaped heating plate 1 is placed between the two limiting platforms 23 to ensure the preliminary docking of the electrode plate 2 and the S-shaped heating plate 1, facilitating subsequent installation, and at the same time increasing the contact area between the end of the S-shaped heating plate 1 and the electrode plate 2, improving the conductive and guiding efficiency.

[0023] Please refer to Figure 2 and Figure 3 As shown, an extension plate 24 is provided at the end of the electrode plate 2 near the mounting docking hole 22. The extension plate 24 is suspended on the outside. A through groove 25 is provided at one end of the extension plate 24 facing away from the electrode plate 2. A stabilizing mechanism is also provided at the connection between the S-shaped heating plate 1 and the electrode plate 2. The stabilizing mechanism includes a sliding sleeve 3 sliding on the surface of the S-shaped heating plate 1. A locking bolt 31 is screwed on one side of the sliding sleeve 3. The sliding sleeve 3 is fixed to the S-shaped heating plate 1 through the locking bolt 31 to ensure the stability of the position of the sliding sleeve 3 after installation.

[0024] Among them, the S-shaped heating plate 1, the electrode plate 2, and the sliding sleeve 3 are all made of ultra-high purity graphite. According to the "Guiding Catalog for the First Batch of Applications of Key New Materials (2024 Edition)", the ash content of the ultra-high purity graphite for semiconductors is ≤5 ppm; the contents of B, Al, and Fe are ≤0.01 ppm; and the resistivity (μΩ·m) is 11 - 15.

[0025] Please refer to Figure 3 and Figure 4 As shown, an extension platform 32 is provided on the outside of one end of the sliding sleeve 3 close to the electrode plate 2. The extension platform 32 corresponds to the position of the extension plate 24. The extension platform 32 is arranged parallel to the extension plate 24, and both are selected to control and be on the outside of the S-shaped heating plate 1.

[0026] Among them, a pull rod 33 is vertically arranged on the side surface of the extension platform 32 close to the electrode plate 2, and the pull rod 33 passes through the through groove 25. A limiting cross bar 34 is symmetrically arranged on the end of the pull rod 33 away from the extension platform 32. The limiting cross bar 34 is placed on the side surface of the extension plate 24 away from the extension platform 32. The two limiting cross bars 34 span across the through groove 25. After being installed in place, the sliding sleeve 3 slides to the side away from the electrode plate 2, so as to pull the extension plate 24 through the cooperation of the pull rod 33 and the limiting cross bar 34, so that the electrode plate 2 is subjected to balanced force.

[0027] When the S-shaped heating plate 1 is vertical, the two electrode plates 2 are horizontally placed above and below the S-shaped heating plate 1. The upper stabilizing mechanism can ensure that the upper electrode plate 2 can be pulled, while the lower stabilizing mechanism can pull the S-shaped heating plate 1 to keep it fixed.

[0028] Among them, the surface of the S-shaped heating plate 1 is provided with an internal threaded hole compatible with the locking bolt 31. When installed in place, the two can be coordinated to achieve complete fixation. The internal threaded hole is a blind hole and should not be too large, otherwise it will affect the resistance of the S-shaped heating plate 1.

[0029] Please refer to Figure 1 and Figure 2 As shown, a circuit docking hole 21 is provided on the end of the surface of the electrode plate 2 which is away from the extension plate 24, so as to facilitate the connection between the positive and negative electrodes.

[0030] Working principle: In the transport state, the S-shaped heating plate 1, the electrode plate 2 and the sleeve 3 are separately packaged. During assembly, the sleeve 3 is first slid on the end of the S-shaped heating plate 1, and then the two electrode plates 2 are respectively installed on the two ends of the S-shaped heating plate 1, so that the S-shaped heating plate 1 is placed between the two limit platforms 23, and the docking bolt 11 is inserted into the installation docking hole 22 to ensure the initial stability of the installation, and then the sleeve 3 is slid to adjust its height so that the pull rod 33 passes through the through grooves 25. By adjusting the height of the sleeve 3, the limit cross bar 34 presses down the extension plate 24, and fixes it by screwing the locking bolt 31. At this time, the electrode plate 2 and the S-shaped heating plate 1 are effectively supported by each other to ensure the overall stability of the heating body.

[0031] The above is only a preferred specific implementation of the utility model; however, the protection scope of the utility model is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical solution and improved ideas of the utility model within the technical scope disclosed by the utility model, which should be included in the protection scope of the utility model.

Claims

1. An ultra-high purity graphite heating element for semiconductors, comprising an S-shaped heating plate (1) and an electrode plate (2), characterized in that: Two electrode plates (2) are provided, and the two ends of the S-shaped heating plate (1) face oppositely. The two electrode plates (2) are respectively placed at the two ends of the S-shaped heating plate (1). A mounting docking hole (22) is provided at one end of the surface of the electrode plate (2). A limiting platform (23) is symmetrically provided at one end of the surface of one side of the electrode plate (2) near the mounting docking hole (22). The two limiting platforms (23) are respectively placed on both sides of the limiting platform (23). Both ends of the S-shaped heating plate (1) are provided with docking bolts (11 ), the docking bolt (11) and the internal dimensions of the mounting docking hole (22) are adapted to each other, the end of the S-shaped heating plate (1) is placed between the two limit platforms (23), an extension plate (24) is provided at the end of the electrode plate (2) close to the mounting docking hole (22), the extension plate (24) is suspended outside, a through groove (25) is provided at one end of the extension plate (24) away from the electrode plate (2), and a stabilizing mechanism is also provided at the connection between the S-shaped heating plate (1) and the electrode plate (2).

2. The ultra-high purity graphite heating element for semiconductor use according to claim 1, characterized in that: The stabilizing mechanism comprises a sliding sleeve (3) sliding on the surface of the S-shaped heating plate (1), a locking bolt (31) being screwed on one side of the sliding sleeve (3), and the sliding sleeve (3) is fixed to the S-shaped heating plate (1) via the locking bolt (31).

3. The ultra-high purity graphite heating element for semiconductor according to claim 2, characterized in that: An extension platform (32) is arranged on the outer side of one end of the sliding sleeve (3) close to the electrode plate (2), and the position of the extension platform (32) corresponds to that of the extension plate (24).

4. The ultra-high purity graphite heating element for semiconductor use according to claim 3, characterized in that: A pull rod (33) is vertically arranged on a side surface of the extension platform (32) close to the electrode plate (2), and the pull rod (33) passes through the through slot (25). A limiting cross bar (34) is symmetrically arranged on one end of the pull rod (33) away from the extension platform (32). The limiting cross bar (34) is placed on a side surface of the extension plate (24) away from the extension platform (32), and two limiting cross bars (34) span across the two ends of the through slot (25).

5. The ultra-high purity graphite heating element for semiconductor use according to claim 2, characterized in that: The surface of the S-shaped heating plate (1) is provided with an internal threaded hole matched with the locking bolt (31).

6. The ultra-high purity graphite heating element for semiconductor use according to claim 1, characterized in that: A circuit docking hole (21) is provided on one end of the surface of the electrode plate (2) which is away from the extension plate (24).

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