Ultrathin wafer conveying device

Abstract

An ultra-thin wafer conveying device comprises a body and a base plate. The base plate is located below the body and provided with a lower surface used for attracting and holding a wafer in a non-contact mode, the lower surface is provided with a holding area corresponding to an outline of the wafer, the holding area defines an annular boundary, the lower surface comprises a plurality of attracting portions, and the attracting portions are used for attracting the wafer in a non-contact mode. The suction part is arranged along and close to the annular boundary and is located in the holding area.

Description

Technical Field

[0001] The utility model relates to a wafer transfer device, and particularly to an ultra-thin wafer transfer device. Background Art

[0002] Wafer processing is the basis of the semiconductor manufacturing industry and one of the important processes. Usually, a robotic arm is used to transfer wafers to move between various process nodes.

[0003] With the progress of technology, the structure of wafers has become more complex and the integration density has increased. As a result, ultra-thin wafers with relatively thin and light dimensions have been developed. In addition to achieving the goal of wafer miniaturization, they can also help wafers dissipate heat, which is conducive to improving the performance and service life of wafers. However, ultra-thin wafers have problems such as large warpage and easy fragmentation, making the methods and equipment for transferring wafers one of the technologies that various manufacturers are actively improving. The traditional method of transferring wafers is to transfer wafers in a contact manner (such as clamping, adsorption). Such methods are prone to problems such as fragmentation and contamination of ultra-thin wafers. Therefore, a non-contact adsorption method has been developed, which adsorbs wafers through the pressure difference generated by air flow (Bernoulli's law) to prevent wafer fragmentation caused by contact. However, the conventional non-contact method of adsorbing wafers cannot solve the problem of wafer warpage and may still affect the yield of wafers.

[0004] Therefore, how to avoid warpage during the transportation of ultra-thin wafers and affect the wafer yield is a problem that those skilled in the art want to solve. Summary of the Utility Model

[0005] The main purpose of the utility model is to solve the problem that the conventional methods and devices for transporting ultra-thin wafers affect the wafer yield.

[0006] The utility model provides an ultra-thin wafer transfer device, including a body and a chassis. The chassis is located below the body. The chassis has a lower surface for attracting and holding a wafer in a non-contact manner. The lower surface has a holding area corresponding to the contour of the wafer. The holding area defines an annular boundary. Among them, the lower surface includes a plurality of suction parts, and the suction parts are arranged along and close to the annular boundary and are located in the holding area. Among them, each of the suction parts has a chamber located above the lower surface and an annular slit arranged on the lower surface and fluidly communicating with the chamber. The chamber is connected to a fluid supply source. The annular slit is exposed on the lower surface, and the annular slit is configured to jet a cyclone of a fluid supplied by the fluid supply source along the circumference of the annular slit towards the annular slit.

[0007] In one embodiment, the wafer has a thickness between 30 μm and 250 μm.

[0008] In one embodiment, the wafer has an outer diameter between 199.5 mm and 200.5 mm.

[0009] In one embodiment, the distance between the center point of the lower surface and the center point of the suction portion is between 0.3 times and 0.5 times the outer diameter of the wafer.

[0010] In one embodiment, the outer diameter of the suction portion is between 0.1 times and 0.2 times the outer diameter of the wafer.

[0011] In one embodiment, the distance between adjacent suction portions is between 0.2 times and 0.4 times the outer diameter of the wafer.

[0012] In one embodiment, the spacing between adjacent suction portions has an angle between 10° and 180°.

[0013] In one embodiment, the suction portions are annular and arranged equidistantly in the holding area. Description of the Drawings

[0014] Figure 1 Schematic diagram of a thin wafer transfer device and a wafer according to an embodiment of the present utility model;

[0015] Figure 2 Bottom view schematic diagram of a thin wafer transfer device according to an embodiment of the present utility model;

[0016] Figure 3 is Figure 2 Cross-sectional view along line A-A;

[0017] Figure 4 is Figure 3 Partial enlarged view of.

[0018]

Symbol Description

[0019] 1: Thin wafer transfer device

[0020] 10: Body

[0021] 11: Main body part

[0022] 12: Connecting part

[0023] 13: Accommodating space

[0024] 20: Chassis

[0025] 21: Lower surface

[0026] 21a: Center point

[0027] 211: Holding area

[0028] 212: Annular boundary

[0029] 22: Suction part

[0030] 22a: Center point

[0031] 221: Chamber

[0032] 222: Flow guiding cover plate

[0033] 223: Annular slit

[0034] 2231: Circumference

[0035] 2232: Flow guiding inclined plane

[0036] W: Wafer

[0037] W1: Profile

[0038] D1: Outer diameter

[0039] D2: Outer diameter

[0040] D3: Outer diameter

[0041] L1: Distance

[0042] L2: Distance

[0043] F: Fluid

[0044] θ: Included angle

[0045] t: Thickness Detailed implementation manner

[0046] The terms used herein are only for the purpose of describing specific embodiments and do not limit the present utility model. Unless otherwise specified in the context, the singular forms "a" and "the" used herein may also include the plural forms.

[0047] The directional terms used herein, such as up, down, left, right, front, back and their derivatives or synonyms, refer to the orientation of the elements in the drawings and do not limit the present utility model, unless otherwise clearly recorded in the context. The detailed description and technical content of the present utility model will be described below in conjunction with the drawings:

[0048] Refer to Figure 1 , the present utility model discloses an ultra-thin wafer transfer device 1 for transferring a wafer W, the wafer W having an outer diameter D1 and a thickness t. For example, the thickness t may be less than 300 μm, and in some examples, the thickness t is not greater than 250 μm. For example, the thickness t may be between 50 μm and 250 μm.

[0049] In one embodiment, the wafer W is an 8-inch ultra-thin wafer, the outer diameter D1 is between 199.5 mm and 200.5 mm, and the thickness t is between 30 μm and 250 μm. In another embodiment, the wafer W is a 4-inch ultra-thin wafer, the outer diameter D1 is between 99.5 mm and 100.5 mm, and the thickness t is between 30 μm and 250 μm. In yet another embodiment, the wafer W is a 5-inch ultra-thin wafer, the outer diameter D1 is between 124.5 mm and 125.5 mm, and the thickness t is between 30 μm and 250 μm. In one embodiment, the wafer W is a 6-inch ultra-thin wafer, the outer diameter D1 is between 149.5 mm and 150.5 mm, and the thickness t is between 30 μm and 250 μm. In other embodiments, the wafer W is a 12-inch ultra-thin wafer, the outer diameter D1 is between 299.5 mm and 300.5 mm, and the thickness t is between 30 μm and 250 μm. Despite the above examples, the wafers applicable to the present utility model are not limited to those described above.

[0050] The ultra-thin wafer transfer device 1 includes a main body 10 and a chassis 20, and the chassis 20 is located below the main body 10. The main body 10 includes a main body portion 11 and a connecting portion 12, and the connecting portion 12 is connected above the main body portion 11 and is coupled to a control device.

[0051] Referring to Figure 2 , the chassis 20 has a lower surface 21, and the lower surface 21 has a holding area 211. The holding area 211 substantially corresponds to a contour W1 of the wafer W. The outer diameter D1 of the wafer W is close to or matches an outer diameter D2 of the holding area 211, and the holding area 211 defines an annular boundary 212. The chassis 20 includes a plurality of suction portions 22 on the lower surface 21. The plurality of suction portions 22 are arranged along and close to the annular boundary 212 and are annularly arranged in the holding area 211. In the present utility model, the plurality of suction portions 22 attract and hold the wafer W in a non-contact manner through Bernoulli's Law on the lower surface 21.

[0052] Referring also to Figure 3 and Figure 4 , each of the plurality of suction portions 22 has a chamber 221, a diversion cover plate 222, and an annular slit 223. The chamber 221 is located above the lower surface 21. The diversion cover plate 222 is disposed below the chamber 221 and is spaced from the chamber 221 by a distance to form the annular slit 223. The annular slit 223 is located on the lower surface 21 and is in fluid communication with the chamber 221. The chamber 221 is connected to a fluid supply source. In one example, the fluid supply source is disposed in a receiving space 13 of the main body 10, and the receiving space 13 can be jointly defined by the main body 10 and the chassis 20.

[0053] The annular slit 223 is exposed on the lower surface 21. The annular slit 223 is configured to jet a cyclone of a fluid F supplied by the fluid supply source along a circumference 2231 of the annular slit 223. Specifically, the annular slit 223 has a flow guiding inclined surface 2232 at the circumference 2231. The flow guiding cover plate 222 guides the fluid F to flow outwards along the flow guiding inclined surface 2232 to form a vacuum attraction force below the flow guiding cover plate 222. In an example, the fluid F is air or an inert gas.

[0054] As Figure 2 shown, in this embodiment, the number of the suction portions 22 is eight, which are arranged at equal intervals along the annular boundary 212. An included angle θ between the suction portions 22 is 45°. In other embodiments, the suction portions 22 may be arranged at unequal intervals or in different numbers along the annular boundary 212, and the included angle θ may be between 10° and 180°, such as 20°, 60°, 90°, 120°, etc.

[0055] In an embodiment, a distance L1 between a center point 21a of the lower surface 21 and a center point 22a of the suction portion 22 is between 0.3 times and 0.5 times of an outer diameter D1 of the wafer W. In an example, it is between 0.35 times and 0.45 times, and preferably 0.4 times.

[0056] In an embodiment, an outer diameter D3 of the suction portion 22 is between 0.1 times and 0.2 times of the outer diameter D1 of the wafer W. In an example, it is between 0.125 times and 0.15 times, and preferably 0.125 times.

[0057] In an embodiment, a distance L2 between the center points 22a of adjacent suction portions 22 is between 0.2 times and 0.4 times of the outer diameter D1 of the wafer W. In an example, it is between 0.25 times and 0.35 times, and preferably 0.3 times.

[0058] In summary, the present utility model can move the wafer in a non-contact manner through the suction portion, reduce the problem of possible breakage of the wafer caused by contact-type moving, further disperse the suction portions on the lower surface of the chassis, and by designing the relevant parameters of the position of the suction portion on the chassis relative to the size of the wafer, when adsorbing the wafer, the problem that the surface of the wafer is warped due to uneven attraction force and affects the yield can be avoided.

Claims

1. An ultra-thin wafer conveying device, characterized in that: include: one body; as well as a chassis located below the body, the chassis having a lower surface for attracting and holding a wafer in a non-contact manner, the lower surface having a holding area corresponding to a contour of the wafer, the holding area defining an annular boundary, wherein the chassis includes a plurality of attracting portions, the attracting portions being arranged along and close to the annular boundary and being located in the holding area; The suction part has a chamber located on the lower surface and an annular slit disposed on the lower surface and connected to the chamber by fluid, the chamber is connected to a fluid supply source, the annular slit is exposed on the lower surface, and the annular slit is configured to spray a cyclone of a fluid supplied by the fluid supply source toward the annular slit along a circumference of the annular slit; Wherein, a distance between a center point of the lower surface and a center point of the attraction portion is between 0.3 times and 0.5 times the outer diameter of the wafer.

2. The ultra-thin wafer conveying device according to claim 1, characterized in that: The wafer has a thickness ranging from 30 microns to 250 microns.

3. The ultra-thin wafer conveying device according to claim 1, characterized in that: The wafer has an outer diameter ranging from 199.5 mm to 200.5 mm.

4. The ultra-thin wafer conveying device according to claim 1, characterized in that: The distance between the center point of the lower surface and the center point of the suction portion is between 0.3 times and 0.5 times the outer diameter of the wafer.

5. The ultra-thin wafer conveying device according to claim 1, characterized in that: The outer diameter of the suction portion is between 0.1 and 0.2 times the outer diameter of the wafer.

6. The ultra-thin wafer conveying device according to claim 1, characterized in that: A distance between adjacent suction parts is between 0.2 times and 0.4 times the outer diameter of the wafer.

7. The ultra-thin wafer conveying device according to claim 1, characterized in that: The distance between adjacent attraction portions has an angle between 10° and 180°.

8. The ultra-thin wafer conveying device according to claim 1, characterized in that: The attracting parts are annular and are arranged in the holding area at equal intervals.

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