Epitaxial equipment and tray thereof

Abstract

The utility model discloses epitaxial equipment and a tray thereof, and relates to the technical field of epitaxial equipment, and the tray of the epitaxial equipment comprises a tray body which is provided with a first surface and a second surface which are opposite to each other; the first surface is provided with a first groove; the bottom of the first groove is provided with a graphical supporting structure used for bearing a wafer; wherein the graphical supporting structure comprises a plurality of concentric circular ring protrusions, and a gap is formed between every two adjacent circular ring protrusions; the top surface of the outermost circular ring bulge is used for bearing a bottom peripheral area of a wafer; along the radial direction of the tray body, the heights of the circular ring protrusions relative to the bottoms of the first grooves are sequentially increased. According to the technical scheme, a plurality of thermal field areas can be formed at the bottom of the wafer based on the design of the height parameter of the circular ring bulge, and the heating effect of each thermal field area on the wafer can be adjusted to realize the purpose of uniformly heating the wafer, so that the epitaxial quality problem caused by non-uniform heating is solved, and the epitaxial quality and the product yield can be improved.

Description

Technical Field

[0001] This application relates to the technical field of epitaxial equipment, and particularly relates to an epitaxial equipment and its tray. Background Art

[0002] In the epitaxial process chamber of the epitaxial equipment, a tray for carrying wafers needs to be provided. The tray undertakes the important functions of carrying and heating the wafers in the epitaxial equipment, and its temperature uniformity directly affects the growth quality of the epitaxial layer on the wafer surface.

[0003] In conventional epitaxial equipment, affected by air flow and heat generation due to electromagnetic induction, the temperature distribution of the tray is uneven, which will cause the wafers placed on the tray surface to be heated unevenly, resulting in inconsistent temperature parameters in different regions of the wafers, thus having a negative impact on epitaxial quality parameters such as the thickness uniformity and surface topography defects of the epitaxial layer on the wafer surface, and reducing the product yield. Utility Model Content

[0004] In view of the above problems, this application provides an epitaxial equipment and its tray to achieve the purpose of enabling the tray to uniformly heat different regions of the wafer. The specific solutions are as follows:

[0005] In the first aspect of this application, a tray for an epitaxial equipment is provided, including:

[0006] A tray body, which has opposite first and second surfaces;

[0007] A first groove located on the first surface; the bottom of the first groove has a patterned support structure for carrying wafers;

[0008] Among them, the patterned support structure includes a plurality of concentric circular ring protrusions, and there is a spacing between adjacent circular ring protrusions; the top surface of the outermost circular ring protrusion is used to carry the bottom peripheral region of the wafer; along the radial direction of the tray body, the height of each circular ring protrusion relative to the bottom of the first groove increases in sequence.

[0009] Optionally, in the tray of the above epitaxial equipment, the central region of the bottom of the first groove has an inner groove, and there is a spacing between the inner groove and the innermost circular ring protrusion.

[0010] Optionally, in the tray of the above epitaxial equipment, there is a preset gap between the side wall of the outermost circular ring protrusion and the side wall of the first groove.

[0011] Optionally, in the tray of the above epitaxial equipment, in the direction from the second surface to the first surface, the width of the preset gap gradually decreases in the radial direction.

[0012] Optionally, in the tray of the above epitaxial equipment, on the circumference where the side wall of the first groove is located, the side wall of the first groove has a plurality of sequentially distributed convex limit members.

[0013] Optionally, in the tray of the above epitaxial device, the convex limiting member is a curved convex structure.

[0014] Optionally, in the tray of the above epitaxial device, the top surface of the outermost circular ring protrusion is lower than the first surface, and the height difference between the top surface of the outermost circular ring protrusion and the first surface is greater than the thickness of the wafer.

[0015] Optionally, in the tray of the above epitaxial device, the tray is any one of a graphite tray, a metal tray, a quartz tray, a ceramic tray, and a composite structure tray.

[0016] Optionally, in the tray of the above epitaxial device, the second surface is used to be placed on the rotating disk of the epitaxial device;

[0017] The central region of the second surface has a second groove, and the second groove is used to introduce inert gas.

[0018] The second aspect of the present application provides an epitaxial device, including the tray of any one of the above.

[0019] By means of the above technical solution, in the epitaxial device and its tray provided by the present application, a patterned support structure is provided at the bottom of the first groove on the first surface of the tray. The patterned support structure includes a plurality of concentric circular ring protrusions. Based on the plurality of circular ring protrusions, a plurality of thermally field regions with gradient changes can be formed at the bottom of the wafer during the epitaxial process. Based on the design of the height parameters of the circular ring protrusions, the heating effect of each thermally field region on the wafer can be adjusted to achieve the purpose of uniformly heating the wafer, thereby solving the epitaxial quality problem caused by uneven heating, and improving the epitaxial quality and product yield. Description of the Drawings

[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present application or related technologies, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained according to the provided drawings without creative efforts.

[0021] The structures, ratios, sizes, etc. shown in the drawings of this specification are only used to cooperate with the content disclosed in the specification for those familiar with this technology to understand and read, and are not used to limit the limiting conditions that can be implemented in the present application. Therefore, they do not have technical substance. Any modification of the structure, change of the proportional relationship, or adjustment of the size should still fall within the scope covered by the technical content disclosed in the present application without affecting the effects that the present application can produce and the purposes that can be achieved.

[0022] Figure 1It is a front top view of a tray in a conventional epitaxial device;

[0023] Figure 2 It is a back top view of a tray in a conventional epitaxial device;

[0024] Figure 3 It is a sectional view of a tray in a conventional epitaxial device along the radial direction;

[0025] Figure 4 It is Figures 1 - 3 a sectional view of the wafer after being placed on the shown tray;

[0026] Figure 5 It is Figures 1 - 3 a schematic diagram of the principle of the problem of inconsistent spacing between the side wall of the wafer and the side wall of the base plate groove after the wafer is placed on the shown tray;

[0027] Figure 6 It is a front top view of a tray in an epitaxial device provided by an embodiment of the present application;

[0028] Figure 7 It is a back top view of a tray in an epitaxial device provided by an embodiment of the present application;

[0029] Figure 8 It is a sectional view of a tray in an epitaxial device provided by an embodiment of the present application along the radial direction;

[0030] Figure 9 It is Figures 6 - 8 a sectional view of the wafer after being placed on the shown tray;

[0031] Figure 10 It is Figures 6 - 8 a schematic diagram of the principle of the problem of inconsistent spacing between the side wall of the wafer and the side wall of the first groove after the wafer is placed on the shown tray;

[0032] Figure 11 It is a partial enlarged view of a tray on the first surface provided by an embodiment of the application;

[0033] Figure 12 It is a top view of a convex limiting member provided by an embodiment of the present application;

[0034] Figure 13 It is a front view of a convex limiting member provided by an embodiment of the present application;

[0035] Figure 14 It is a side view of a convex limiting member provided by an embodiment of the present application.

[0036] Reference numerals:

[0037] 10 - Wafer; 11 - Wafer surface; 12 - Substrate groove; 121 - Side wall; 13 - Trapezoidal groove; 20 - Tray body; 201 - First surface; 202 - Second surface; 21 - First groove; 22 - Patterned support structure; 23 - Ring protrusion; 231 - Middle convex ring; 232 - Outer convex ring; 24 - Inner groove; 25 - Protrusion limiting member; 26 - Second groove; 27 - Preset gap. Detailed implementation manners

[0038] The following will clearly and completely describe the embodiments in the present application with reference to the accompanying drawings in the embodiments of the present application. Those of ordinary skill in the art will know that with the development of technology and the emergence of new scenarios, the technical solutions provided in the embodiments of the present application are equally applicable to similar technical problems.

[0039] Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts belong to the scope protected by the present application. The terms used in the embodiments of the present application are only used to explain the specific embodiments of the present application, rather than aiming to limit the present application.

[0040] Refer to Figures 1 - 5 , Figure 1 is the front top view of the tray in a conventional epitaxial device, Figure 2 is the back top view of the tray in a conventional epitaxial device, Figure 3 is the sectional view of the tray in a conventional epitaxial device along the radial direction, Figure 4 is Figures 1 - 3 the sectional view after the wafer is placed on the tray shown, Figure 5 is Figures 1 - 3 the schematic diagram of the principle of the problem of inconsistent spacing between the side wall of the wafer and the side wall of the substrate groove after the wafer is placed on the tray shown.

[0041] The tray in a conventional epitaxial device has two opposite wafer surfaces 11, and these two surfaces are the upper surface and the lower surface of the tray respectively. The upper surface of the tray is provided with a substrate groove 12, and the side wall 121 of the substrate groove 12 is a circular ring-shaped side wall adapted to the wafer. The lower surface of the tray is provided with a trapezoidal groove 13.

[0042] Due to the fact that the bottom of the substrate groove 12 of the conventional tray structure is a plane and is used to place the wafer 10. During the epitaxial process, due to the influence of factors such as air flow and electromagnetic induction differential heat, the temperature distribution of the tray is uneven, which will cause inconsistent heating of different regions of the wafer.

[0043] During the wafer epitaxial growth process, affected by factors such as gas flow and heat generation due to electromagnetic induction, the temperature distribution of the tray will be uneven. Since the wafer 10 placed in the substrate groove 12 is unevenly heated, the temperature parameters of each region of the wafer 10 will be inconsistent, which will have a negative impact on the epitaxial parameters such as the thickness uniformity, surface morphology, and defects of the epitaxial layer on the wafer surface, reducing the epitaxial yield. The problem of uneven tray temperature distribution has a more obvious impact on the quality of large-size wafer epitaxial wafers.

[0044] As Figure 4 shown, in order to better accommodate the wafer 10, the diameter of the substrate groove 12 is larger than the diameter of the wafer 10 to be carried. Therefore, there will be a certain distance between the edge of the wafer 10 and the side wall 121 of the substrate groove 12.

[0045] When picking up and placing the wafer 10, it is difficult to ensure that the distances between different regions of the wafer side wall and the side wall of the substrate groove are consistent. The situation shown in Figure 5 will occur, where the distance between the left side of the wafer 10 and the side wall of the substrate groove is larger, while the distance between the right side of the wafer 10 and the side wall of the substrate groove is smaller. This results in inconsistent distances between different regions of the wafer side wall and the side wall of the substrate groove, thereby causing differences in the temperature field and gas flow field in the edge region of the wafer top surface. This difference will affect the uniformity of the coating parameters and stress release in the edge region of the wafer top surface, thus affecting the epitaxial quality.

[0046] In addition, during the process of picking up and placing the wafer 10, the edge of the wafer 10 will touch the tray, which will cause particles to fall off the touched area of the tray. Since the tray needs to carry the wafer 10 and be placed in the epitaxial process chamber for epitaxial coating. During the epitaxial process, deposits will inevitably form on the surface of the tray. These deposits are either loose or protruding. When the wafer 10 touches the surface of the tray during picking up and placing, a large amount of its surface deposits will fall onto the edge region of the wafer top surface, resulting in a large number of obvious falling particle defects on the wafer after epitaxy, having a great negative impact on the quality of the wafer epitaxial wafer. This problem is more serious after the tray has been undergoing epitaxial growth for a long time.

[0047] In the conventional solution, the local heating temperature control design of the heater can be used to make different regions along the radial direction of the tray have uniform temperature, so as to improve the temperature uniformity of the tray heating the wafer. This method requires a complex temperature control system and temperature control data processing method, which will increase the cost of the heating control system and the complexity of data processing, and cannot solve the pollution problem caused by particle falling.

[0048] To solve the above problems, an embodiment of the present application provides a tray for an epitaxial device, including:

[0049] A tray body, the tray body having opposite first and second surfaces;

[0050] Having a first groove on the first surface; the bottom of the first groove has a patterned support structure for carrying a wafer;

[0051] Wherein, the patterned support structure includes a plurality of concentric circular ring protrusions, and there is a spacing between adjacent circular ring protrusions; the top surface of the outermost circular ring protrusion is used to carry the bottom peripheral region of the wafer; along the radial direction of the tray body, the height of each circular ring protrusion relative to the bottom of the first groove increases in sequence.

[0052] In the embodiment of the present application, a patterned support structure is provided at the bottom of the first groove on the first surface of the tray. The patterned support structure includes a plurality of concentric circular ring protrusions. Based on the plurality of circular ring protrusions, a plurality of thermally field regions with gradient changes can be formed at the bottom of the wafer during the epitaxial process. Based on the design of the height parameters of the circular ring protrusions, the heating effect of each thermally field region on the wafer can be adjusted to achieve the purpose of uniformly heating the wafer, thereby solving the epitaxial quality problem caused by uneven heating and improving the epitaxial quality and product yield.

[0053] Moreover, the tray provided by the embodiment of the present application does not need to change the heater and the heating control method. It can adjust the heating effect of different regions of the tray on the wafer in the radial direction through the height of the circular ring protrusions while maintaining the uneven temperature distribution along the radial direction of the tray to achieve uniform heating of the wafer.

[0054] Furthermore, in the embodiment of the present application, a preset gap can be reserved between the outermost circular ring protrusion and the side wall of the first groove. Through the preset gap, the thermal field and air flow field of the wafer edge region can be adjusted to ensure the uniformity of the coating parameters and stress release of the top surface edge region, thereby improving the epitaxial quality of the wafer top surface edge region.

[0055] Furthermore, in the embodiment of the present application, a convex limiting member can be provided on the side wall of the first groove to reduce the contact area between the wafer edge and the side wall of the first groove, thereby reducing the contact area between the wafer and the tray when picking and placing the wafer, and reducing the risk of falling particulate matter. In addition, the convex limiting member can also increase the specific surface area of the side wall of the first groove. The increase in the specific surface area helps to improve the heat conduction and dissipation of the edge of the first groove, reducing the contact area between the side wall of the wafer and the side wall of the first groove to the minimum, which is beneficial to further improving the uniformity of the thermal field and air flow field in the wafer edge region.

[0056] The above is the core inventive concept of the technical solution of the present application. To make the above objects, features, and advantages of the present application more obvious and understandable, the present application will be further described in detail below with reference to the drawings and specific embodiments.

[0057] Refer to Figures 6 - 10 , Figure 6The front top view of a tray in an epitaxial device provided by an embodiment of the present application Figure 7 The back top view of a tray in an epitaxial device provided by an embodiment of the present application Figure 8 The sectional view of a tray in an epitaxial device provided by an embodiment of the present application along the radial direction Figure 9 is Figures 6 - 8 The sectional view after placing a wafer on the tray shown Figure 10 is Figures 6 - 8 The schematic diagram of the principle of the problem of inconsistent spacing between the side wall of the wafer and the side wall of the first groove after placing the wafer on the tray shown

[0058] As Figures 6 - 8 shown, the tray of the epitaxial device provided by an embodiment of the present application includes:

[0059] A tray body 20, the tray body 20 has opposite first surface 201 and second surface 202;

[0060] There is a first groove 21 on the first surface; the bottom of the first groove 21 has a patterned support structure 22 for carrying a wafer;

[0061] Among them, the patterned support structure 22 includes a plurality of concentric ring protrusions 23, and there is a spacing between adjacent ring protrusions 23; the top surface of the outermost ring protrusion 23 is used to carry the bottom peripheral region of the wafer 10; along the radial direction of the tray body 20, the height of each ring protrusion 23 relative to the bottom of the first groove 21 increases in turn.

[0062] In the tray provided by an embodiment of the present application, a patterned support structure 22 is provided at the bottom of the first groove 21 on the first surface 201 of the tray. The patterned support structure 22 includes a plurality of concentric ring protrusions 23. Based on the plurality of ring protrusions 23, a plurality of thermally field regions with gradient changes can be formed at the bottom of the wafer 10 during the epitaxial process. Based on the design of the height parameters of the ring protrusions 23, the heating effect of each thermally field region on the wafer 10 can be adjusted to achieve the purpose of uniformly heating the wafer 10, thereby solving the epitaxial quality problem caused by uneven heating and improving the epitaxial quality and product yield.

[0063] The number of concentric ring protrusions 23 in the patterned support structure 22 can be set according to requirements. Figures 6 - 10 In the shown manner, taking the patterned support structure 22 having two concentric ring protrusions 23 as an example for illustration.

[0064] Each annular protrusion 23 can respectively form a thermal field region at the bottom of the wafer 10. It is easy to know that at the bottom of the first groove 21, the more the number of annular protrusions 23, the more the number of thermal field regions that can be formed at the bottom of the wafer 10, and the higher the accuracy of adjusting the thermal field distribution at the bottom of the wafer 10. In the embodiments of the present application, the number of annular protrusions 23 can be set according to different heating requirements. The embodiments of the present application do not limit the number of annular protrusions 23 and are not limited to Figures 6 - 10 the two shown in the figure. The number of annular protrusions 23 can be any number.

[0065] In an implementation manner of the embodiments of the present application, the central region at the bottom of the first groove has an inner groove 24, and there is a spacing between the inner groove 24 and the innermost annular protrusion. In the central region of the tray (the central region at the bottom of the first groove), it is generally the highest temperature region. In order to balance the heating temperature effect between the central region of the tray and other regions, the inner groove 24 is provided in the central region at the bottom of the first groove to increase the distance between the central region of the tray and the wafer 10, so as to reduce the difference in the heating effect on the wafer 10 between the central region of the tray and other regions and improve the uniformity of heating the wafer 10 by the tray.

[0066] In other implementation manners, it is also possible to set the central region at the bottom of the first groove to be a non-grooved flat region.

[0067] In an implementation manner of the embodiments of the present application, there is a preset gap 27 between the side wall of the outermost annular protrusion 23 and the side wall of the first groove 21. Based on this preset gap 27, a gap thermal field can be formed between the edge of the wafer 10 and the side wall of the first groove 21. This gap thermal field can adjust the thermal field distribution at the edge of the wafer 10 to adjust the heating effect of the tray on the wafer 10, so as to be able to adjust the problem of uneven heating effect at the edge of the wafer 10 caused by uneven distance distribution between the circumference where the side wall of the wafer is located and the circumference where the side wall of the first groove is located, improve the temperature uniformity of different regions of the wafer 10, and improve the epitaxial quality.

[0068] As Figures 8 - 10 shown, in the direction from the second surface 202 to the first surface 201, the width of the preset gap 27 gradually decreases in the radial direction. Here, the radial direction is the radial direction of the circular surface where the first surface 201 or the second surface 202 of the tray is located.

[0069] Setting the width of the preset gap 27 to gradually decrease in the radial direction can better adjust the temperature uniformity of the edge region of the wafer 10 to further improve the epitaxial quality. In other implementation manners, it is also possible to set the width of the preset gap 27 to be uniformly unchanged in the radial direction.

[0070] In one implementation manner of the embodiment of the present application, on the circumference where the side wall of the first groove 21 is located, the side wall of the first groove 21 has a plurality of protruding limiting members 25 distributed in sequence. The structure of the protruding limiting member 25 can be as Figures 11 - 13 shown.

[0071] Refer to Figures 11 - 14 , Figure 11 which is a partial enlarged view of the first surface of a tray provided by the embodiment of the application, Figure 12 which is a top view of a protruding limiting member provided by the embodiment of the present application, Figure 13 which is a front view of a protruding limiting member provided by the embodiment of the present application, Figure 14 which is a side view of a protruding limiting member provided by the embodiment of the present application.

[0072] As Figures 11 - 14 shown, the protruding limiting member 25 is a curved surface protruding structure. On the side wall of the first groove 21, a plurality of protruding limiting members 25 distributed in sequence are arranged along the circumference where the side wall of the first groove 21 is located.

[0073] Optionally, the plurality of protruding limiting members 25 can be evenly spaced along the circumference where the side wall of the first groove 21 is located.

[0074] The protruding limiting member 25 can reduce the contact area between the edge of the wafer and the side wall of the first groove, thereby reducing the contact area between the wafer 10 and the tray when picking and placing the wafer 10, so as to reduce the risk of falling of falling particulate matter.

[0075] Moreover, the protruding limiting member 25 can also increase the specific surface area of the side wall of the first groove. The increase in the specific surface area helps to improve the conduction and dissipation of heat at the edge of the first groove, reduce the contact area between the side wall of the wafer 10 and the side wall of the first groove to the minimum, and is beneficial to further improving the uniformity of the thermal field and the airflow field in the edge area of the wafer.

[0076] As Figures 12 - 14 shown, the protruding limiting member 25 can be a curved surface protruding structure, such as a semi-ellipsoidal column. By adopting the protruding limiting member 25 with a semi-ellipsoidal column structure, the contact area between the side wall of the first groove 21 and the wafer 10 can be minimized, and the particles deposited on the surface of the protruding limiting member 25 are the least, so as to minimize the influence on the temperature field and particle size at the edge of the wafer.

[0077] In the embodiment of the present application, other three-dimensional curved surface protruding structures can also be used as the protruding limiting member 25, such as a sphere or a cylinder, etc. The specific structure of the protruding limiting member 25 in the embodiment of the present application is not limited.

[0078] As Figure 9 and Figure 10As shown, in an implementation manner of the embodiment of the present application, the top surface of the outermost annular protrusion 23 can be set to be lower than the first surface 201, and the height difference between the top surface of the outermost annular protrusion 23 and the first surface 201 is greater than the thickness of the wafer 10. In this way, the wafer 10 can be located below the first surface 201 to completely accommodate the wafer 10 in the first groove 21, so as to better uniformly heat the wafer 10 and at the same time better limit the wafer 10 to prevent the wafer 10 from falling out of the first groove 21.

[0079] In the embodiment of the present application, the tray can be a graphite tray. In other implementation manners, the tray can also be any one of a metal tray, a quartz tray, a ceramic tray, and a composite structure tray. Among them, the composite tray can be a tray prepared by a laminated structure of different materials. The material of the tray can be selected according to requirements, and the embodiment of the present application does not limit the material of the tray.

[0080] The epitaxial device has a rotating disk. The second surface 202 of the tray provided in the embodiment of the present application is placed on the surface of the rotating disk, so as to realize uniform coating of different regions on the top surface of the wafer as the rotating disk rotates.

[0081] Optionally, a second groove 26 is provided in the central region of the second surface 202. The second surface 202 is used to be placed on the rotating disk of the epitaxial device; the central region of the second surface 202 has the second groove 26, and the second groove 26 is used to introduce an inert gas to prevent the tray from being unable to be separated from the rotating disk due to low-pressure adsorption.

[0082] Taking the tray for epitaxy of an 8-inch wafer 10 as an example, the tray provided in the embodiment of the present application will be further described below. Among them, the thickness of the 8-inch wafer 10 can be 0.5 mm, and the radius can be 100 mm. Obviously, in the embodiment of the present application, the number of annular protrusions 23 in the tray and the dimensions of related structures can be set according to the size of the wafer 10 to be epitaxied, and the number of annular protrusions 23 in the tray and the related dimensions are not limited to the description of the following implementation manner.

[0083] As Figures 6 - 10 shown, it can be set that the tray has two annular protrusions 23, and an inner groove 24 is provided in the central region of the bottom of the first groove 21. The two annular protrusions 23 are respectively used as an outer convex ring 232 and a middle convex ring 231. The inner groove 24, the middle convex ring 231, and the outer convex ring 232 arranged in sequence in the radial direction of the tray can form three temperature compensation gradients. The side wall of the first groove with a plurality of convex limiting members 25 can be used as a curved surface limiting ring. As described above, the curved surface limiting ring can include a plurality of semi-ellipsoid structures evenly spaced apart.

[0084] Among them, the thickness range of the tray body 20 can be 3 mm to 7 mm, that is, the distance range between the first surface 201 and the second surface 202 is 3 mm to 7 mm. The radius range of the tray body 20 is 110 mm to 120 mm, that is, the radius range of the circular surface where the first surface 201 and the second surface 202 are located is 110 mm to 120 mm.

[0085] Optionally, the radius range of the first groove 21 is 101 mm to 105 mm, and the depth range is 0.5 mm to 1.9 mm.

[0086] Optionally, the radius range of the inner groove 24 can be 10 mm to 50 mm, and the depth range can be 0.1 mm to 0.5 mm. The inner groove 24 is a circular groove with a chamfer range of 10° to 60°.

[0087] Optionally, the inner diameter range of the middle convex ring 231 is 53 mm to 75 mm, the outer diameter range is 78 mm to 85 mm, and the height range can be 0.1 mm to 0.5 mm. The middle convex ring 231 is a circular ring-shaped protrusion with a chamfer range of 10° to 60°.

[0088] Optionally, the inner diameter range of the outer convex ring 232 is 87 mm to 92 mm, the outer diameter range is 93 mm to 100 mm, and the height range can be 0.1 mm to 0.5 mm. The outer convex ring 232 is a circular ring-shaped protrusion with a chamfer range of 10° to 60°.

[0089] As described above, in order to achieve a more uniform heating effect on different regions of the wafer 10 and prevent falling particulate matter from contaminating the surface of the wafer 10, an ellipsoidal column protrusion can be provided on the side wall of the first groove 21 as the protrusion limiting member 25. The height range of the ellipsoidal column protrusion can be 0.5 mm to 1.5 mm, and the radius range can be 0.2 mm to 0.8 mm. Further, the height range of the ellipsoidal column protrusion can be 0.5 mm to 1.2 mm. Further, the height range of the ellipsoidal column protrusion can be 0.3 mm to 0.8 mm.

[0090] Optionally, the radius range of the second groove 26 inside the second surface 202 is 70 mm to 90 mm, and the depth range is 1.2 mm to 2 mm.

[0091] Based on the inner groove 24, the middle convex ring 231 and the outer convex ring 232 designed with the above parameters, along the radial direction of the tray, the vertical distance between the bottom of the wafer and the tray can be different, so as to balance the influence of the uneven temperature distribution along the radial direction of the tray on the heating temperature uniformity of the wafer through the differential design of the vertical distance between the wafer and the tray, thereby solving the problem of uneven heating temperature of the wafer caused by uneven temperature in the radial direction of the tray and improving the temperature uniformity of the wafer 10.

[0092] Since there is a curved surface interval between the convex limit members 25 and the limit is an ellipsoidal cylindrical surface, the convex limit members 25 can effectively increase the specific surface area of the side wall of the first groove. The increase in the specific surface area of the side wall of the first groove helps to improve the heat conduction and dissipation at the edge of the convex limit members 25. Moreover, the contact surface between the wafer edge and the side wall of the first groove is minimized, which can further suppress the influence of the tray edge on the temperature and airflow field uniformity of the wafer edge. At the same time, it can also reduce the risk of particulate matter falling from the edge of the first groove.

[0093] Based on the description of the above embodiments, another embodiment of the present application further provides an epitaxial device, which includes the tray provided by any one of the above embodiments.

[0094] In the embodiment of the present application, when the epitaxial device adopts the tray of the above embodiment, in the case where the radial outward degree of the tray is uneven, the distance between the tray and the bottom of the wafer can be adjusted by the plurality of annular protrusions 23 in the tray. Based on the plurality of annular protrusions, during the epitaxial process, a plurality of thermal field regions with gradient changes can be formed at the bottom of the wafer. Based on the design of the height parameters of the annular protrusions, the heating effect of each thermal field region on the wafer can be adjusted to achieve the purpose of uniformly heating the wafer, thereby solving the epitaxial quality problem caused by uneven heating and improving the epitaxial quality and product yield.

[0095] As described above, the tray provided by the embodiment of the present application does not need to change the heater and the heating control method. It can maintain the uneven distribution of the temperature along the radial direction of the tray and adjust the heating effect of different regions of the tray on the wafer in the radial direction by the height of the annular protrusions to achieve uniform heating of the wafer.

[0096] Furthermore, in the embodiment of the present application, a preset gap can be reserved between the outermost circular protrusion and the side wall of the first groove. Through the preset gap, the thermal field and airflow field in the edge region of the wafer can be adjusted to ensure the uniformity of the coating parameters and stress release in the top surface edge region, thereby improving the epitaxial quality of the top surface edge region of the wafer.

[0097] Furthermore, in the embodiment of the present application, the contact area between the wafer edge and the side wall of the first groove can be reduced by the convex limit members provided on the side wall of the first groove, thereby reducing the contact area between the wafer and the tray when picking and placing the wafer, and reducing the risk of particulate matter falling. In addition, the convex limit members can also increase the specific surface area of the side wall of the first groove. The increase in the specific surface area helps to improve the heat conduction and dissipation at the edge of the first groove, and reducing the contact area between the side wall of the wafer and the side wall of the first groove to the lowest level is beneficial to further improving the uniformity of the thermal field and airflow field in the edge region of the wafer.

[0098] The descriptions of the various embodiments in the specification of this application are presented in a progressive, or parallel, or a combination of progressive and parallel manners. Each embodiment focuses on the differences from other embodiments, and the same or similar parts among the embodiments can be referred to each other. The embodiments provided in the embodiments of this application can be combined with each other without conflict.

[0099] It should be noted that in the description of this application, it should be understood that the descriptions of the drawings and embodiments are illustrative rather than restrictive. The same reference numerals throughout the embodiments of the specification identify the same structures. Additionally, for the sake of understanding and easy description, the drawings may exaggerate the thickness of some layers, films, panels, regions, etc. At the same time, it can be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, the element can be directly on the other element or there may be intermediate elements. Further, "on" means positioning the element on or under another element, but does not inherently mean positioning on the upper side of another element according to the direction of gravity.

[0100] The orientation or positional relationship indicated by terms such as "upper", "lower", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing this application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as a limitation of this application. When a component is considered to be "connected" to another component, it can be directly connected to the other component or there may be intermediate components present simultaneously.

[0101] It also should be noted that in this text, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including", or any other variation thereof is intended to cover non-exclusive inclusion, such that an article or device including a series of elements includes not only those elements but also other elements not explicitly listed, or also includes elements inherent to such article or device. Without further limitation, an element defined by the statement "including one..." does not exclude the existence of additional identical elements in the article or device including the above elements.

[0102] The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A tray for epitaxial equipment, characterized in that: include: a tray body having a first surface and a second surface opposite to each other; A first groove is provided on the first surface; a bottom of the first groove has a graphic support structure for carrying a wafer; Among them, the graphic support structure includes a plurality of concentric circular protrusions, and there is a spacing between adjacent circular protrusions; the top surface of the outermost circular protrusion is used to support the bottom peripheral area of ​​the wafer; along the radial direction of the tray body, the height of each circular protrusion relative to the bottom of the first groove increases successively.

2. The tray of the epitaxial device according to claim 1, characterized in that: An inner groove is provided in the central area of ​​the bottom of the first groove, and a distance is provided between the inner groove and the innermost annular protrusion.

3. The tray of the epitaxial device according to claim 1, characterized in that: A preset gap is provided between the side wall of the outermost annular protrusion and the side wall of the first groove.

4. The tray of the epitaxial device according to claim 3, characterized in that: In the direction from the second surface to the first surface, the width of the preset gap in the radial direction gradually decreases.

5. The tray of the epitaxial device according to claim 3, characterized in that: On the circumference of the side wall of the first groove, the side wall of the first groove has a plurality of protruding limiters distributed in sequence.

6. The tray of the epitaxial device according to claim 5, characterized in that: The raised stopper is a curved raised structure.

7. The tray of the epitaxial device according to claim 1, characterized in that: The top surface of the outermost circular protrusion is lower than the first surface, and the height difference between the top surface of the outermost circular protrusion and the first surface is greater than the thickness of the wafer.

8. The tray of the epitaxial equipment according to claim 1, characterized in that: The tray is any one of a graphite tray, a metal tray, a quartz tray, a ceramic tray and a composite structure tray.

9. The tray of the epitaxial device according to any one of claims 1 to 8, characterized in that: The second surface is used to be placed on the rotating disk of the epitaxial device; A second groove is provided in the central area of ​​the second surface, and the second groove is used for introducing an inert gas.

10. An epitaxial device, characterized in that: Comprising a pallet as described in any one of claims 1-9.

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