Physical vapor deposition device

Abstract

The utility model provides a physical vapor deposition device which comprises a cavity provided with an air inlet channel and an air outlet channel which are both communicated with the cavity; the bearing part is arranged in the cavity, and the bearing part is used for bearing a wafer; and the flow guide part is arranged in the cavity, the flow guide part is arranged around the bearing part, the flow guide part is provided with a flow guide channel, and the flow guide channel is communicated with the exhaust channel. According to the physical vapor deposition device provided by the utility model, the flow guide piece is arranged in the cavity and is used for guiding the flow of the gas in the cavity, so that the gas in the cavity can be uniformly discharged, and the uniformity of a coating film on the surface of a wafer is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing equipment, in particular to a physical vapor deposition device. Background Art

[0002] Thin film deposition technology is a process method of depositing substances on the surface of a substrate to form a thin film, and is often used to prepare thin films of various materials. For example, a thin film or coating can be formed on a wafer through thin film deposition technology to improve the performance of the wafer.

[0003] In the existing cavity, the exhaust member is arranged on one side of the electrostatic chuck. When the reaction gas is exhausted through the exhaust member, the gas flow distribution in the cavity will be uneven, thus affecting the uniformity of the coating on the surface of the wafer. Summary of the Utility Model

[0004] The purpose of the utility model is to provide a physical vapor deposition device, which solves the problem of uneven gas flow distribution inside the reaction cavity when the reaction gas is exhausted, and improves the uniformity of the coating on the surface of the wafer.

[0005] To achieve the above purpose, in the first aspect, the utility model provides a physical vapor deposition device, including:

[0006] A cavity having an intake channel and an exhaust channel, both the intake channel and the exhaust channel being in communication with the cavity;

[0007] A carrier member disposed in the cavity for carrying a wafer;

[0008] A flow guide member disposed in the cavity, the flow guide member surrounding the carrier member, the flow guide member being provided with a flow guide channel, the flow guide channel being in communication with the exhaust channel.

[0009] The beneficial effect of the physical vapor deposition device provided by the utility model is that: by arranging a flow guide member in the cavity to guide the gas in the cavity, the gas in the cavity can be exhausted evenly, thereby improving the uniformity of the coating on the surface of the wafer.

[0010] In some embodiments, the flow guide member has an annular structure, and the flow guide member and the carrier member cooperate to divide the cavity into a reaction cavity and an exhaust cavity. A plurality of air guide holes are provided in the flow guide member, the air guide holes penetrating through the flow guide member and being in communication with the flow guide channel, so that the reaction cavity and the exhaust cavity are in communication;

[0011] The exhaust passage is opened in the exhaust cavity. The beneficial effect is that: the flow guiding member and the bearing member cooperate to divide the cavity into a reaction cavity and an exhaust cavity. The gas in the reaction cavity can only flow into the exhaust cavity through the flow guiding member and is finally discharged through the exhaust passage. Due to the guiding effect of the flow guiding member, the gas in the cavity is discharged evenly.

[0012] In some embodiments, the exhaust passage is located on one side of the bearing member;

[0013] The diameter of the flow guiding passage near the exhaust passage is smaller than the diameter of the flow guiding passage far from the exhaust passage. The beneficial effect is that: since the exhaust passage is arranged on the side of the bearing member close to it, the flow rate of the air guide holes on the side of the flow guiding member close to the exhaust passage is greater than the flow rate of the air guide holes on the side far from the exhaust passage. In order to balance the flow rate of the gas so that the gas in the cavity can be discharged evenly, the diameter of the flow guiding passage near the exhaust passage is set to be smaller than the diameter of the flow guiding passage far from the exhaust passage, thereby improving the uniformity of the coating on the wafer surface.

[0014] In some embodiments, the air guide hole has a first port and a second port, and the first port and the second port are respectively located at both ends of the air guide hole;

[0015] The inner diameter of the first port and / or the second port of several of the air guide holes close to the exhaust passage is smaller than the inner diameter of the first port and / or the second port of the air guide holes far from the exhaust passage. The beneficial effect is that: since the exhaust passage is arranged on the side of the bearing member close to it, the inner diameter of the first port and / or the second port of several of the air guide holes close to the exhaust passage is set to be smaller than the inner diameter of the first port and / or the second port of the air guide holes far from the exhaust passage, so that the gas in the cavity can be discharged evenly, thereby improving the uniformity of the coating on the wafer surface.

[0016] In some embodiments, several of the air guide holes are arranged on the flow guiding member at intervals, and the distance between adjacent air guide holes on the side close to the exhaust passage is greater than the distance between adjacent air guide holes on the side far from the exhaust passage.

[0017] In some embodiments, the physical vapor deposition device further includes a lining sleeve, a pressing ring and a deposition ring;

[0018] The deposition ring is arranged at the edge of the bearing member;

[0019] The lining sleeve is arranged in the reaction cavity and has a distance from the deposition ring, and the lining sleeve is used to isolate the inner wall of the reaction cavity;

[0020] The pressing ring is connected to the inner lining sleeve and extends towards the deposition ring for shielding the gap between the inner lining sleeve and the deposition ring. The beneficial effect is as follows: By arranging the inner lining sleeve in the reaction chamber, the inner side wall of the reaction chamber is prevented from being contaminated, and the deposition ring is arranged at the edge of the carrier for shielding the edge of the carrier, avoiding the edge of the carrier from being contaminated. The pressing ring is arranged between the inner lining sleeve and the deposition ring for shielding the gap between the inner lining sleeve and the deposition ring, preventing the escaped metal atoms from passing through the gap between the inner lining sleeve and the deposition ring and diffusing into the exhaust chamber, thus contaminating the exhaust chamber.

[0021] In some embodiments, the flow guiding member is connected to the bottom of the inner lining sleeve;

[0022] The carrier has a carrying portion, the carrying portion is adapted to the flow guiding member, and the carrying portion is used for carrying a wafer;

[0023] When the carrying portion moves to the flow guiding member, the carrying portion cooperates with the flow guiding member to divide the cavity into a reaction chamber and an exhaust chamber. The beneficial effect is as follows: By the cooperation of the carrying portion and the flow guiding member, the cavity is divided into a reaction chamber and an exhaust chamber, and the gas in the reaction chamber can only be discharged into the exhaust chamber through the flow guiding member and finally discharged through the exhaust passage, so that the gas in the reaction chamber can be discharged evenly, thereby improving the uniformity of the coating on the wafer surface.

[0024] In some embodiments, the physical vapor deposition device further includes a bellows;

[0025] The carrier further has a supporting portion, and the bellows is sleeved on the supporting portion to separate the supporting portion from the exhaust chamber. Description of the Drawings

[0026] Figure 1 It is a schematic structural diagram of the physical vapor deposition device according to the embodiment provided by the present utility model;

[0027] Figure 2 It is a cross-sectional view of the flow guiding member along its radial direction according to the first embodiment provided by the present utility model;

[0028] Figure 3 It is a top view of the flow guiding member according to the second embodiment provided by the present utility model;

[0029] Figure 4 It is a top view of the flow guiding member according to the third embodiment provided by the present utility model;

[0030] Figure 5 It is a cross-sectional view of the flow guiding member along its axial direction according to the third embodiment provided by the present utility model.

[0031] 1. Cavity; 11. Exhaust passage; 12. Reaction chamber; 13. Exhaust chamber;

[0032] 2. Carrier; 21. Carrying part; 22. Supporting part;

[0033] 3. Flow guide member; 31. Flow guide channel; 32. Air guide hole; 321. First port; 322. Second port;

[0034] 4. Inner lining sleeve; 5. Compression ring; 6. Deposition ring; 7. Bellows. Detailed implementation manners

[0035] To make the objectives, technical solutions and advantages of the present utility model clearer, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the present utility model. Based on the embodiments in the present utility model, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the scope of protection of the present utility model. Unless otherwise defined, the technical terms or scientific terms used herein shall have the ordinary meanings understood by those of ordinary skill in the art in the field to which the present utility model belongs. The words such as "including" used herein mean that the elements or objects appearing before this word cover the elements or objects listed after this word and their equivalents, without excluding other elements or objects. The "connection" described herein can be a direct connection or an indirect connection, that is, a connection through an intermediate object, unless otherwise specified.

[0036] In view of the problems existing in the prior art, an embodiment of the present utility model provides a physical vapor deposition device. Referring to Figure 1 and Figure 2 as shown, the physical vapor deposition device includes a cavity 1, a carrier 2 and a flow guide member 3. Among them, the cavity 1 has an intake channel and an exhaust channel 11. Both the intake channel and the exhaust channel 11 are in communication with the cavity 1. The intake channel is used to introduce reaction gas into the cavity 1, and the exhaust channel 11 is used to discharge the reacted gas from the cavity 1. The carrier 2 is disposed in the cavity 1, and the carrier 2 is used to carry a wafer. The flow guide member 3 is located in the cavity 1, and the flow guide member 3 is disposed around the carrier 2. The flow guide member 3 is provided with a flow guide channel 31, and the flow guide channel 31 is in communication with the exhaust channel 11. When the gas in the cavity 1 is discharged, it is first guided by the flow guide member 3 and finally discharged through the exhaust channel 11.

[0037] In this embodiment, by providing the flow guide member 3 in the cavity 1 to guide the gas in the cavity 1, the gas in the cavity 1 can be discharged evenly, thereby improving the uniformity of the coating on the wafer surface.

[0038] Referring to Figure 1 and Figure 2As shown, in some embodiments, the flow guide member 3 has an annular structure. The inner diameter of the flow guide member 3 is adapted to the outer diameter of the carrier member 2. When the flow guide member 3 is engaged with the carrier member 2, the cavity 1 can be divided into a reaction chamber 12 and an exhaust chamber 13 which are distributed vertically. A plurality of air guide holes 32 are formed in the flow guide member 3. The plurality of air guide holes 32 are evenly and spacedly distributed on the flow guide member 3. The air guide holes 32 penetrate through the flow guide member 3 and communicate with the flow guide channel 31, so that the reaction chamber 12 and the exhaust chamber 13 communicate with each other. The exhaust channel 11 is provided in the exhaust chamber 13.

[0039] In this embodiment, the cooperation between the flow guide member 3 and the carrier member 2 can divide the cavity 1 into the reaction chamber 12 and the exhaust chamber 13. Therefore, the gas in the reaction chamber 12 can only flow into the exhaust chamber 13 through the flow guide member 3 and is finally discharged through the exhaust channel 11. During the discharge process of the gas, due to the guiding effect of the flow guide member 3, the gas in the cavity 1 is evenly discharged.

[0040] Furthermore, the exhaust channel 11 is located on one side of the carrier member 2. Therefore, the flow rate on the side close to the exhaust channel 11 is relatively faster than that on the side far from the exhaust channel 11, which may cause uneven distribution of the air flow in the reaction chamber 12 during the gas discharge process. To solve this problem, in this embodiment, as Figure 2 shown, the diameter of the flow guide channel 31 close to the exhaust channel 11 is smaller than the diameter of the flow guide channel 31 far from the exhaust channel 11, that is, the inner diameter of the flow guide channel 31 close to the exhaust channel 11 is relatively smaller, and the inner diameter far from the exhaust channel 11 is relatively larger, so as to balance the flow rate of the gas, so that the gas in the cavity 1 can be evenly discharged, thereby improving the uniformity of the film coating on the wafer surface.

[0041] Refer to Figure 3 shown, in some embodiments, a plurality of the air guide holes 32 are spacedly arranged on the flow guide member 3, and the distance between adjacent air guide holes 32 on the side close to the exhaust channel 11 is greater than the distance between adjacent air guide holes 32 on the side far from the exhaust channel 11.

[0042] In this embodiment, by setting the distance between adjacent air guide holes 32 on the side close to the exhaust channel 11 to be greater than the distance between adjacent air guide holes 32 on the side far from the exhaust channel 11, it also plays a role in balancing the flow rate of the gas.

[0043] Refer to Figure 4 and Figure 5As shown, in some embodiments, the air guide hole 32 has a first port 321 and a second port 322. The first port 321 and the second port 322 are respectively located at two ends of the air guide hole 32. The inner diameter of the first port 321 and / or the second port 322 of several air guide holes 32 close to the exhaust passage 11 is smaller than that of the first port 321 and / or the second port 322 far from the exhaust passage 11.

[0044] It can be understood that since the exhaust passage 11 is arranged on the side close to the carrier 2, the inner diameter of the first port 321 and / or the second port 322 of several air guide holes 32 close to the exhaust passage 11 is set to be smaller than that of the first port 321 and / or the second port 322 far from the exhaust passage 11 to balance the gas flow rate.

[0045] In this embodiment, the inner diameters of the first port 321 and the second port 322 of several air guide holes 32 close to the exhaust passage 11 are both smaller than the inner diameter of the first port 321 far from the exhaust passage 11. Among them, the inner diameters of the first port 321 and the second port 322 on each air guide hole 32 are the same.

[0046] Reference Figure 1 As shown, in some embodiments, the physical vapor deposition device further includes a lining sleeve 4, a pressing ring 5 and a deposition ring 6. Among them, the deposition ring 6 is arranged at the edge of the carrier 2. The lining sleeve 4 is arranged in the reaction chamber 12 and has a spacing from the deposition ring 6. The lining sleeve 4 is used to isolate the inner side wall of the reaction chamber 12. The pressing ring 5 is connected to the lining sleeve 4 and extends towards the deposition ring 6 to block the gap between the lining sleeve 4 and the deposition ring 6.

[0047] In this embodiment, by arranging the lining sleeve 4 in the reaction chamber 12, the inner side wall of the reaction chamber 12 is prevented from being contaminated. And the deposition ring 6 is arranged at the edge of the carrier 2 to block the edge of the carrier 2 to prevent the edge of the carrier 2 from being contaminated. In addition, the pressing ring 5 is arranged between the lining sleeve 4 and the deposition ring 6 to block the gap between the lining sleeve 4 and the deposition ring 6, preventing the escaped metal atoms from passing through the gap between the lining sleeve 4 and the deposition ring 6 and diffusing into the exhaust chamber 13 to contaminate the exhaust chamber 13.

[0048] In some embodiments, the flow guide member 3 is fixedly connected to the bottom of the inner lining sleeve 4. The carrier member has a carrier portion 21, and the carrier portion 21 is adapted to the flow guide member 3. The carrier portion 21 is used for carrying a wafer. When the carrier portion 21 moves to the flow guide member 3, the carrier portion 21 cooperates with the flow guide member 3 to divide the cavity 1 into the reaction cavity 12 and the exhaust cavity 13.

[0049] In this embodiment, by the cooperation of the carrier portion 21 and the flow guide member 3, the cavity 1 is divided into the reaction cavity 12 and the exhaust cavity 13. The gas in the reaction cavity 12 can only be discharged into the exhaust cavity 13 through the flow guide member 3 and finally discharged through the exhaust passage 11, so that the gas in the reaction cavity 12 can be discharged evenly, thereby improving the uniformity of the film coating on the wafer surface.

[0050] In some embodiments, the physical vapor deposition device further includes a bellows 7. The carrier member 2 further has a support portion 22. The bellows 7 is sleeved on the support portion 22 to separate the support portion 22 from the exhaust cavity 13. One end of the support portion 22 is fixedly connected to the bottom of the carrier portion 21, and the other end of the support portion 22 extends to the outside of the exhaust cavity 13 and can be connected to a telescopic mechanism. The telescopic mechanism can drive the carrier member 2 to move up and down telescopically.

[0051] As mentioned above, the above is only the specific implementation manner of the embodiments of the present application, but the protection scope of the embodiments of the present application is not limited thereto. Any changes or substitutions within the technical scope disclosed in the embodiments of the present application should be covered within the protection scope of the embodiments of the present application. Therefore, the protection scope of the embodiments of the present application should be subject to the protection scope of the claims.

Claims

1. A physical vapor deposition apparatus, characterized in that, Comprising: A cavity having an intake channel and an exhaust channel, both the intake channel and the exhaust channel being in communication with the cavity; A carrier member disposed within the cavity for carrying a wafer; A flow guide member disposed within the cavity, the flow guide member surrounding the carrier member, the flow guide member having a flow guide channel therein, the flow guide channel being in communication with the exhaust channel.

2. The physical vapor deposition apparatus according to claim 1, characterized in that, The flow guide member has an annular structure, and the flow guide member and the carrier member cooperate to divide the cavity into a reaction chamber and an exhaust chamber. A plurality of air guide holes are formed in the flow guide member, the air guide holes penetrating through the flow guide member and being in communication with the flow guide channel, so that the reaction chamber and the exhaust chamber are in communication; The exhaust channel is formed in the exhaust chamber.

3. The physical vapor deposition apparatus according to claim 2, characterized in that, The exhaust channel is located on one side of the carrier member; The diameter of the flow guide channel near the exhaust channel is smaller than the diameter of the flow guide channel away from the exhaust channel.

4. The physical vapor deposition device according to claim 2 or 3, characterized in that, The air guide hole has a first port and a second port, the first port and the second port being located at both ends of the air guide hole respectively; In a plurality of the air guide holes, the inner diameter of the first port and / or the second port near the exhaust channel is smaller than the inner diameter of the first port and / or the second port away from the exhaust channel.

5. The physical vapor deposition apparatus according to claim 2 or 3, characterized in that, A plurality of the air guide holes are spaced apart on the flow guide member, and the spacing between adjacent air guide holes on the side close to the exhaust channel is greater than the spacing between adjacent air guide holes on the side away from the exhaust channel.

6. The physical vapor deposition apparatus according to claim 2, wherein, Further comprising a lining sleeve, a pressing ring and a deposition ring; The deposition ring is disposed at the edge of the carrier member; The lining sleeve is disposed within the reaction chamber and has a spacing from the deposition ring, the lining sleeve being used for insulating the inner wall of the reaction chamber; The pressing ring is connected to the lining sleeve and extends towards the deposition ring for covering the gap between the lining sleeve and the deposition ring.

7. The physical vapor deposition apparatus according to claim 6, wherein, The flow guide member is connected to the bottom of the lining sleeve; The carrier member has a carrying portion, the carrying portion being adapted to the flow guide member, the carrying portion being used for carrying a wafer; When the carrying portion moves to the flow guide member, the carrying portion and the flow guide member cooperate to divide the cavity into a reaction chamber and an exhaust chamber.

8. The physical vapor deposition apparatus according to claim 7, wherein Further comprising a bellows; The carrier member further has a support portion, and the bellows is sleeved on the support portion to separate the support portion from the exhaust chamber.

Images