Static elimination device and wafer cleaning machine
By adding conductive clamps, conductive strips and connectors in the wafer cleaning machine table, a conductive path is formed to direct the charge on the wafer surface to the ground, the discharge problem caused by static electricity aggregation in the center of the wafer is solved and the product yield is improved.
Patent Information
- Application Number
- CN202422139821.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-02
- Publication Date
- 2025-07-04
- Estimated Expiration
- 2034-09-02
AI Technical Summary
In the prior art, electrostatic induction of the wafer during high-speed rotation causes charge to accumulate at the tip of the treatment liquid column, forming discharge phenomena, damaging the wafer center and affecting product yield.
By adding conductive clamps, conductive strips, rotary shafts and connectors to the wafer cleaning machine table, a conductive path is formed to guide the charge on the wafer surface to the ground to avoid tip discharge.
It effectively reduces the discharge probability of the wafer when the processing liquid comes into contact with the wafer when it rotates at high speed, avoids damage to the wafer center, and improves product yield.
Smart Images
Figure CN223066129U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the field of semiconductor manufacturing, in particular to an electrostatic elimination device and a wafer cleaning machine. Background Art
[0002] Currently, during the process of single-wafer cleaning, the liquid distribution pipeline is arranged above the wafer and directly sprays the processing liquid onto the wafer rotating at a high speed. During the high-speed rotation of the wafer, due to electrostatic induction, the tip of the processing liquid column always accumulates the most charges, and a discharge phenomenon will occur when it contacts the wafer, which will cause damage to the center of the wafer and affect the product yield.
[0003] In order to eliminate static electricity, an ion bar device inside the machine is usually used to generate positive and negative ions with a fixed frequency, and the laminar flow system inside the machine is relied on to neutralize the charges on the wafer surface. The generation frequency of the ion generator is calibrated by using the charge decay time of the CPM (Charge Plate Monitor). Usually, when the tip of the discharge needle of the ion generator is damaged or contaminated, the ionization efficiency will be significantly affected. In the actual production process, the inspection period for opening the cavity is often more than one month, which results in the static electricity dissipation time not being able to be detected in real time, and problems can only be discovered during maintenance inspections.
[0004] Based on this, how to reduce the static electricity accumulation at the center of the wafer has become a technical problem that needs to be solved by those skilled in the art. Summary of the Utility Model
[0005] The purpose of the utility model is to provide an electrostatic elimination device and a wafer cleaning machine to solve the problem in the prior art that a large amount of charges at the tip of the processing liquid column cannot be eliminated, resulting in a discharge phenomenon when it contacts the wafer and reducing the product yield.
[0006] To achieve the above purpose, the utility model provides an electrostatic elimination device, including: a clamping member, a conductive bar, a rotating shaft, and a connecting member;
[0007] One end of the clamping member is used to contact the wafer, and the other end contacts the conductive bar; at least a part of the conductive bar contacts the rotating shaft, and the rotating shaft is connected to a grounded external component through the connecting member, so that the charges accumulated on the wafer are introduced to the ground through the clamping member, the conductive bar, the rotating shaft, and the connecting member;
[0008] Wherein, the clamping member, the conductive bar, the rotating shaft, the connecting member, and the grounded external component are all made of conductive materials.
[0009] Optionally, the electrostatic elimination device is provided with at least two clamping members and conductive screws, the number of the clamping members matches the number of the conductive screws, at least two clamping members are evenly arranged along the circumference of the carrier of the cleaning machine, one end of the clamping member abuts against the edge of the wafer, and the other end is connected to the carrier through the conductive screw.
[0010] Optionally, the clamping member has a connecting end and a overlapping end, the connecting end is rotatably connected to the carrier, the size of the connecting end is larger than the size of the overlapping end, and the connecting end is tilted in a direction away from the carrier during rotation of the carrier, so that the overlapping end is tilted in a direction close to the carrier and overlaps the edge of the wafer.
[0011] Optionally, the conductive strip is laid below the bottom surface of the carrier plate and contacts the clamping member disposed at the edge of the carrier plate, so as to transfer the charge derived from the clamping member.
[0012] Optionally, the rotating shaft is connected to the carrier and is disposed in a central area of the carrier, the rotating shaft is in contact with at least a portion of the conductive strips, and the rotating shaft is used to drive the carrier to rotate around its axis.
[0013] Optionally, the rotating shaft is covered by a back nozzle arrangement of the cleaning machine, and the back nozzle is used to spray processing liquid onto the back region of the wafer.
[0014] Optionally, one end of the connecting member is connected to the outer wall of the rotating shaft, and the other end is connected to a crossbeam of the cleaning machine, and the crossbeam is grounded.
[0015] In order to achieve the above-mentioned object, the utility model also provides a wafer cleaning machine, comprising: a carrier, a beam, a back nozzle and the static elimination device as described above;
[0016] The clamping member is arranged protruding from the carrier plate and is used for clamping the wafer to be cleaned;
[0017] The conductive strip is laid below the bottom surface of the carrier, the rotating shaft contacts at least a portion of the conductive strip, the back nozzle is inserted between the rotating shaft and the conductive strip and extends out of the conductive strip, and the outlet end of the back nozzle is located between the conductive strip and the wafer, and is used to spray a processing liquid onto the back region of the wafer;
[0018] The rotating shaft is connected to the grounded beam through the connecting piece to guide the charges accumulated on the wafer to the ground.
[0019] Optionally, the wafer cleaning machine further includes a plurality of liquid inlet pipelines and recovery pipelines;
[0020] The liquid inlet pipelines and the recovery pipelines are arranged in one-to-one correspondence;
[0021] The outlet ends of multiple liquid inlet pipelines are arranged above the wafer and are used to spray different processing liquids onto the surface of the wafer respectively;
[0022] The inlet ends of the recovery pipelines are arranged on both sides of the wafer and are respectively used to recover the processing liquids sprayed by the corresponding liquid inlet pipelines.
[0023] Optionally, the wafer cleaning machine further includes an air inlet pipeline and an exhaust pipeline;
[0024] The outlet end of the air inlet pipeline is arranged above the wafer and is used to spray a protective gas onto the surface of the wafer;
[0025] The exhaust pipeline is located below the wafer and is used to absorb the protective gas sprayed by the air inlet pipeline.
[0026] Compared with the existing cleaning machine, the electrostatic elimination device and the wafer cleaning machine provided by the present application have the following advantages:
[0027] For the electrostatic elimination device provided by the present application, by adding a conductive strip and a connecting piece, and replacing the clamping piece with a conductive material, one end of the clamping piece is in contact with the wafer, the other end is in contact with the conductive strip, at least a part of the conductive strip is in contact with the rotating shaft, and the rotating shaft is connected to the grounded cross beam through the connecting piece, forming a conductive path. The charges accumulated at the center of the wafer sequentially pass through the clamping piece, the conductive strip, the rotating shaft, the connecting piece and the grounded cross beam, and finally lead to the ground, which can reduce the charges accumulated at the tip of the processing liquid column when the wafer rotates at high speed, so as to reduce the probability of discharge phenomenon when the processing liquid contacts the wafer, avoid damage at the center of the wafer, and improve the product yield.
[0028] For the wafer cleaning machine provided by the present application, by setting the above-mentioned electrostatic elimination device to form a conductive path, the charges accumulated on the surface of the wafer can be led to the ground, thereby reducing the charges accumulated at the tip of the processing liquid column when the wafer rotates at high speed, thus avoiding damage to the center of the wafer and improving the product yield. Description of the Drawings
[0029] Figure 1 It is a schematic structural diagram of the electrostatic elimination device provided by an embodiment of the present invention;
[0030] Figure 2 It is a schematic structural diagram of the wafer cleaning machine provided by an embodiment of the present invention;
[0031] Among them, the descriptions of the reference numerals are as follows:
[0032] 10 - Clamping member; 20 - Conductive bar; 30 - Rotating shaft; 40 - Connecting member; 50 - Wafer; 60 - Cross beam; 70 - Carrier tray; 80 - Back nozzle; 90 - Liquid inlet pipeline; 91 - Recycling pipeline; 92 - Air inlet pipeline; 93 - Exhaust pipeline. Detailed implementation manners
[0033] To make the objectives, advantages and features of the present utility model clearer, the following further describes the present utility model in detail with reference to the accompanying drawings and specific embodiments. It should be noted that the accompanying drawings are all in a very simplified form and not drawn to scale, and are only used to conveniently and clearly assist in explaining the objectives of the embodiments of the present utility model. In addition, the structures shown in the accompanying drawings are often part of the actual structures. In particular, the accompanying drawings need to show different emphases and sometimes use different scales.
[0034] As used in this specification, the singular forms "a", "an" and "the" include plural objects. The term "or" is usually used in the sense of including "and / or". The term "several" is usually used in the sense of including "at least one". The term "at least two" is usually used in the sense of including "two or more". In addition, the terms "first", "second", "third" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, the features defined with "first", "second", "third" may explicitly or implicitly include one or at least two of such features. "One end" and "the other end" and "proximal end" and "distal end" usually refer to two corresponding parts, which not only include the endpoints. The terms "mounted", "connected", "coupled" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be directly connected, or indirectly connected through an intermediate medium. It may be the internal communication of two components or the interaction relationship between two components. In addition, as used in this specification, when an element is disposed on another element, it usually only indicates that there is a connection, coupling, cooperation or transmission relationship between the two elements, and the two elements may be directly or indirectly connected, coupled, cooperated or transmitted through an intermediate element, and cannot be understood as indicating or implying the spatial position relationship between the two elements, that is, an element may be inside, outside, above, below or on one side of another element, etc., unless the content clearly indicates otherwise. The terms "upper", "lower", "top", "bottom" are usually relative position relationships arranged according to the direction of gravity; the terms "vertical, vertical direction" usually refer to the direction along the gravity direction, which is generally perpendicular to the ground. The "horizontal, horizontal plane direction" is usually along the direction parallel to the ground; for those of ordinary skill in the art, the specific meanings of the above terms in this specification can be understood according to specific circumstances.
[0035] The purpose of the present utility model is to provide an electrostatic elimination device and a wafer cleaning machine tool, so as to solve the problem in the prior art that a large amount of charges at the tip of the processing liquid column cannot be eliminated, resulting in a discharge phenomenon when it contacts the wafer instantaneously, and reducing the product yield.
[0036] Those skilled in the art can understand that there are a large number of movable free electrons on the wafer surface. When the wafer rotates at a high speed, these free electrons will also rotate around the wafer center continuously. The attraction of the positively charged atomic nucleus to the free electrons is certain and relatively weak. As the rotation speed of the wafer increases, the free electrons break away from the attraction of the atomic nucleus, making the center and the edge area of the wafer have different electricities. At this time, the processing liquid sprayed towards the wafer center is ejected in the form of a liquid column, and tip discharge is extremely likely to occur at the tip of the liquid column, thereby damaging the wafer center. Based on this, this embodiment provides an electrostatic elimination device and a wafer cleaning machine tool. By adding a clamping member, a conductive bar and a connecting member, a conductive path is formed, and the excess charges accumulated on the wafer surface are guided to the ground through the conductive path, thereby reducing the probability of damage to the wafer center caused by tip discharge and improving the product yield.
[0037] Please refer to Figure 1, the present utility model provides an electrostatic elimination device, comprising: a clamping member 10, a conductive bar 20, a rotating shaft 30 and a connecting member 40; one end of the clamping member 10 is used to contact the wafer 50, and the other end contacts the conductive bar 20; at least a part of the conductive bar 20 contacts the rotating shaft 30, and the rotating shaft 30 is connected to a grounded external member through the connecting member 40, so that the charges accumulated on the wafer 50 are introduced to the ground through the clamping member 10, the conductive bar 20, the rotating shaft 30 and the connecting member 40; wherein, the clamping member 10, the conductive bar 20, the rotating shaft 30, the connecting member 40 and the grounded external member are all made of conductive materials. It should be noted that the conductive material can be a metal material (such as silver, copper, aluminum, etc.), an alloy material (such as brass, nickel-chromium alloy), an inorganic non-metallic material (such as graphite) or a polymer conductive material, and those skilled in the art can configure it according to the actual situation. In this embodiment, the material of the clamping member 10 is ESD (Electro-Static Discharge) polytetrafluoroethylene (PTFE). It can be understood by those skilled in the art that electrostatic discharge refers to the charge transfer caused by objects with different electrostatic potentials approaching or directly contacting each other. When an object with static charges contacts other objects, there is a charge flow between these two objects with different electrostatic potentials according to the principle of charge neutralization, and enough electric charge is transmitted to offset the voltage. With such a configuration, by adding the conductive bar 20 and the connecting member 40 and replacing the clamping member 10 with a conductive material, one end of the clamping member 10 contacts the wafer 50, the other end contacts the conductive bar 20, at least a part of the conductive bar 20 contacts the rotating shaft 30, and the rotating shaft 30 is connected to a grounded cross beam 60 through the connecting member 40, forming a conductive path. The charges accumulated at the center of the wafer 50 sequentially pass through the clamping member 10, the conductive bar 20, the rotating shaft 30, the connecting member 40 and the grounded external member, and finally lead to the ground, which can reduce the charges accumulated at the tip of the processing liquid column when the wafer 50 rotates at a high speed, so as to reduce the probability of discharge phenomenon when the processing liquid contacts the wafer 50, avoid forming damage at the center of the wafer 50, and improve the product yield.
[0038] As an alternative embodiment, the static eliminator is provided with at least two clamping members 10 and conductive screws (not shown in the figure). The number of clamping members 10 is adapted to the number of conductive screws. The at least two clamping members 10 are evenly arranged along the circumference of the carrier 70 of the cleaning machine table. One end of the clamping member 10 abuts against the edge of the wafer 50, and the other end is connected to the carrier 70 through a conductive screw. Further, the clamping member 10 has a connecting end (not shown in the figure) and a lapping end (not shown in the figure). The connecting end is rotatably connected to the carrier 70. The size of the connecting end is larger than that of the lapping end. During the rotation of the carrier 70, the connecting end inclines away from the carrier 70, so that the lapping end inclines towards the carrier 70 and lapps with the edge of the wafer 50. Please continue to refer to Figure 1 , the clamping member 10 is a conductive pin. One ends of a plurality of clamping members 10 respectively abut against the edge of the wafer 50. The plurality of clamping members 10 are evenly arranged along the circumference of the carrier 70 to relatively fix the wafer 50, ensuring that the wafer 50 and the clamping members 10 do not separate from each other during the high-speed rotation of the wafer 50. Moreover, the plurality of clamping members 10 all abut against the wafer 50, increasing the contact area between the clamping members 10 and the wafer 50 and improving the charge transfer efficiency. At the same time, since the carrier 70 itself is made of an insulating material, the other end of the clamping member 10 is fixed to the carrier 70 through a conductive screw, which also ensures the continuous transfer of charges and prevents them from accumulating on the clamping members 10 and being unable to flow continuously. In an alternative embodiment, the clamping member 10 is a variable-diameter structure. The diameter of the connecting end is larger than that of the lapping end. The connecting end is rotatably connected to the carrier 70 through a conductive screw. The connecting end can swing in the direction close to or away from the carrier 70. During the high-speed rotation of the carrier 70, due to the fact that the mass of the connecting end is larger than that of the lapping end, under the action of the centrifugal force, the connecting end inclines away from the carrier 70. Correspondingly, the lapping end inclines towards the carrier 70. The lapping end is composed of an inclined surface and a limiting protrusion. During the lapping with the edge of the wafer 50, the wafer 50 moves along the inclined surface until the edge of the wafer 50 contacts the limiting protrusion. A plurality of limiting protrusions lap with the edge of the wafer 50 to clamp the wafer 50.
[0039] In an alternative embodiment, the conductive strip 20 is laid below the bottom surface of the carrier 70 and contacts the clamping member 10 provided at the edge of the carrier 70 for transferring the charges led out by the clamping member 10. It should be noted that since the carrier 70 itself is made of an insulating material, a conductive strip 20 needs to be laid on the surface of the carrier 70 to realize the continuous flow of charges. Among them, the conductive strip 20 can cover the entire bottom surface area of the carrier 70 to form a conductive layer; or it can be only laid on the transfer path between the clamping member 10 and the rotating shaft 30. Those skilled in the art can configure the laying situation of the conductive strip 20 according to the circumstances.
[0040] Please continue to refer to Figure 1 , the rotating shaft 30 is connected to the carrier plate 70 and is disposed in the central region of the carrier plate 70. The rotating shaft 30 is in contact with at least a part of the conductive bars 20. The rotating shaft 30 is used to drive the carrier plate 70 to rotate around its axis. Further, the rotating shaft 30 is disposed to cover the back nozzle 80 of the cleaning machine. The back nozzle 80 is used to spray the processing liquid onto the back surface region of the wafer 50. In Figure 1 the illustrated exemplary embodiment, the rotating shaft 30 is disposed to cover the back nozzle 80, and the back nozzle 80 corresponds to the position of the center of the wafer 50, so that during the high-speed rotation of the wafer 50, the processing liquid can be sprayed onto the center of the wafer 50 to complete the cleaning of the wafer 50. In addition, while the rotating shaft 30 drives the carrier plate 70 to rotate, the wafer 50, the clamping member 10, and the conductive bars 20 also rotate accordingly, so as to ensure that the wafer 50 is kept connected to the clamping member 10 throughout the cleaning process, so that during the entire cleaning process, the excess charge on the surface of the wafer 50 can be guided to the ground through the conductive path, releasing the charge and reducing the probability of generating discharge and affecting the product yield at the same time.
[0041] Furthermore, one end of the connecting member 40 is connected to the outer wall of the rotating shaft 30, and the other end is connected to the cross beam 60 of the cleaning machine. The cross beam 60 is grounded. It should be noted that in this embodiment, the connecting member 40 is a bearing, and multiple of them can be arranged circumferentially along the rotating shaft 30 and are respectively connected to the cross beam 60 to ensure the charge transfer efficiency; or only one can be provided as long as it is connected to the grounded cross beam 60 to conduct the entire conductive path. In an alternative embodiment, after using the above static elimination device, the charge amount on the surface of the wafer 50 drops from the original 9.63% to 0.1%. It can be seen that the conductive effect of the above static elimination device is very remarkable, which can conduct away most of the excess charge on the surface of the wafer 50 and greatly reduce the probability of generating discharge and causing damage to the center of the wafer 50.
[0042] In another embodiment, please refer to Figure 2, the present utility model further provides a wafer 50 cleaning machine, including: a carrier 70, a cross beam 60, a back nozzle 80, and the electrostatic elimination device as described above; the clamping member 10 protrudes from the carrier 70 and is used for clamping the wafer 50 to be cleaned; the conductive strip 20 is laid below the bottom surface of the carrier 70, the rotating shaft 30 is in contact with at least a part of the conductive strip 20, the back nozzle 80 passes through the rotating shaft 30 and the conductive strip 20 and extends out of the conductive strip 20, and the outlet end of the back nozzle 80 is located between the conductive strip 20 and the wafer 50 and is used for spraying the treatment liquid onto the back surface area of the wafer 50; the rotating shaft 30 is connected to the grounded cross beam 60 through a connecting member 40 to guide the charges accumulated on the wafer 50 to the ground. It should be noted that the treatment liquid includes: HF (hydrofluoric acid), DIO3 (ozonated water), DIW (deionized water), and is used to remove the impurities remaining on the surface of the wafer 50. With such a configuration, by setting the above-mentioned electrostatic elimination device to form a conductive path, the charges accumulated on the surface of the wafer 50 can be guided to the ground, thereby reducing the charges accumulated at the tip of the treatment liquid column when the wafer 50 rotates at high speed, thus avoiding damage to the center of the wafer 50 and improving the product yield.
[0043] Further, the wafer 50 cleaning machine further includes a plurality of liquid inlet pipelines 90 and a recovery pipeline 91; the liquid inlet pipelines 90 and the recovery pipeline 91 are configured in one-to-one correspondence; the outlet ends of the plurality of liquid inlet pipelines 90 are arranged above the wafer 50 and are used for spraying different treatment liquids onto the surface of the wafer 50 respectively; the inlet ends of the recovery pipeline 91 are arranged on both sides of the wafer 50 and are respectively used for recovering the treatment liquids sprayed out by the corresponding liquid inlet pipelines 90. It should be noted that, in Figure 2 , three liquid inlet pipelines 90 and three recovery pipelines 91 are used in combination. The three liquid inlet pipelines 90 respectively flow HF, DIO3, and DIW. The inlet ends of the three liquid inlet pipes are respectively connected to the liquid storage tanks containing the three treatment liquids, and the opening and closing of the pipelines are controlled by valves. The three recovery pipelines 91 provide the suction force for recovering the corresponding treatment liquids through a motor to recover the corresponding treatment liquids after cleaning. Of course, in some other embodiments, the number of the liquid inlet pipelines 90 can also be configured according to the number of treatment liquids used, and the selected treatment liquids can also be set according to the actual situation. This embodiment does not limit this.
[0044] Even further, the wafer 50 cleaning machine further includes an air inlet pipeline 92 and an exhaust pipeline 93; the outlet end of the air inlet pipeline 92 is arranged above the wafer 50 and is used for spraying a protective gas onto the surface of the wafer 50; the exhaust pipeline 93 is located below the wafer 50 and is used for absorbing the protective gas sprayed out by the air inlet pipeline 92. It should be noted that, in Figure 2In this case, the protective gas flowing in the intake pipeline 92 is N2 (nitrogen). Correspondingly, the exhaust pipeline 93 also provides a suction force for recycling the corresponding protective gas through the motor, thereby recycling the protective gas participating in the reaction. Of course, in some other embodiments, the gas flowing in the intake pipeline 92 can also be other types of gases, and those skilled in the art can configure this according to the actual situation, and this embodiment is not limited thereto.
[0045] In summary, in the electrostatic elimination device and the wafer cleaning machine provided in the embodiments of the present invention, the electrostatic elimination device includes: a clamping member, a conductive bar, a rotating shaft, and a connecting member; one end of the clamping member is used to contact the wafer, and the other end contacts the conductive bar; at least a part of the conductive bar contacts the rotating shaft, and the rotating shaft is connected to a grounded external member through the connecting member, so that the charges accumulated on the wafer are introduced into the ground through the clamping member, the conductive bar, the rotating shaft, and the connecting member; wherein, the clamping member, the conductive bar, the rotating shaft, the connecting member, and the grounded external member are all made of conductive materials.
[0046] With such a configuration, by adding a conductive bar and a connecting member, and replacing the clamping member with a conductive material, one end of the clamping member contacts the wafer, the other end contacts the conductive bar, at least a part of the conductive bar contacts the rotating shaft, and the rotating shaft is connected to a grounded cross beam through the connecting member, forming a conductive path. The charges accumulated at the center of the wafer sequentially pass through the clamping member, the conductive bar, the rotating shaft, the connecting member, and the grounded cross beam, and finally are guided to the ground, which can reduce the charges accumulated at the tip of the processing liquid column when the wafer rotates at a high speed, so as to reduce the probability of discharge phenomenon when the processing liquid contacts the wafer, avoid damage at the center of the wafer, and improve the product yield.
[0047] Furthermore, by setting the above-mentioned electrostatic elimination device to form a conductive path, the charges accumulated on the wafer surface can be guided to the ground, thereby reducing the charges accumulated at the tip of the processing liquid column when the wafer rotates at a high speed, thereby avoiding damage to the center of the wafer and improving the product yield.
[0048] The above description is only a description of the preferred embodiments of the present invention, and does not limit the scope of the present invention in any way. Any changes and modifications made by those of ordinary skill in the art of the present invention based on the above disclosure are within the protection scope of the claims.
Claims
1. An electrostatic elimination device, characterized in that, include: Clamping parts, conductive strips, rotating shafts and connecting parts; One end of the clamp is used to contact the wafer, and the other end is in contact with the conductive strip; at least a portion of the conductive strip is in contact with the rotating shaft, and the rotating shaft is connected to a grounded external component through the connecting member, so that the charge accumulated on the wafer is introduced into the ground through the clamp, the conductive strip, the rotating shaft and the connecting member; Wherein, the clamping member, the conductive strip, the rotating shaft, the connecting member and the grounded external component are all made of conductive materials.
2. The static eliminator device according to claim 1, characterized in that, The electrostatic elimination device is provided with at least two clamping members and conductive screws, the number of the clamping members is adapted to the number of the conductive screws, at least two clamping members are evenly arranged along the circumference of the carrier of the cleaning machine, one end of the clamping member is against the edge of the wafer, and the other end is connected to the carrier through the conductive screw.
3. The static eliminator according to claim 2, wherein, The clamping member has a connecting end and a lap end, the connecting end is rotatably connected to the carrier, the size of the connecting end is larger than the size of the lap end, and the connecting end is tilted in a direction away from the carrier during the rotation of the carrier, so that the lap end is tilted in a direction close to the carrier and overlaps the edge of the wafer.
4. The static eliminator device according to claim 2, wherein The conductive strip is laid below the bottom surface of the carrier plate and contacts the clamping member arranged at the edge of the carrier plate, so as to transfer the electric charge derived from the clamping member.
5. The static eliminator device according to claim 4, characterized in that, The rotating shaft is connected to the carrier and is disposed in the central area of the carrier. The rotating shaft contacts at least a portion of the conductive strips. The rotating shaft is used to drive the carrier to rotate around its axis.
6. The static eliminator device according to claim 5, wherein The rotating shaft is covered by a back nozzle arrangement of the cleaning machine, and the back nozzle is used for spraying a processing liquid onto a back region of the wafer.
7. The static eliminator device according to claim 1, wherein One end of the connecting piece is connected to the outer wall of the rotating shaft, and the other end is connected to the crossbeam of the cleaning machine, and the crossbeam is grounded.
8. A wafer cleaning machine, characterized in that, include: A carrier plate, a beam, a back nozzle, and an electrostatic eliminator as claimed in any one of claims 1 to 7; The clamping member is arranged protruding from the carrier plate and is used for clamping the wafer to be cleaned; The conductive strip is laid below the bottom surface of the carrier, the rotating shaft contacts at least a portion of the conductive strip, the back nozzle is inserted between the rotating shaft and the conductive strip and extends out of the conductive strip, and the outlet end of the back nozzle is located between the conductive strip and the wafer, and is used to spray a processing liquid onto the back region of the wafer; The rotating shaft is connected to the grounded beam through the connecting piece to guide the charges accumulated on the wafer to the ground.
9. The wafer cleaning machine according to claim 8, wherein, The wafer cleaning machine also includes a plurality of liquid inlet pipelines and recovery pipelines; The liquid inlet pipeline and the recovery pipeline are configured in a one-to-one correspondence; The outlet ends of the plurality of liquid inlet pipelines are arranged above the wafer, and are used to spray different processing liquids onto the surface of the wafer respectively; The inlet ends of the recovery pipeline are arranged on both sides of the wafer, and are respectively used to recover the processing liquid sprayed out of the corresponding liquid inlet pipeline.
10. The wafer cleaning machine according to claim 8, characterized in that, The wafer cleaning machine also includes an air intake pipeline and an exhaust pipeline; The outlet end of the intake pipeline is arranged above the wafer and is used to spray a protective gas onto the surface of the wafer; The exhaust pipeline is located below the wafer and is used to absorb the protective gas ejected from the intake pipeline.