Wafer boat device

Abstract

The embodiment of the utility model provides a wafer boat device. The wafer boat device comprises a first base and a second base which are oppositely arranged; the plurality of boat columns are connected with the first base and the second base; a plurality of layers of supporting legs used for supporting wafers are arranged on each wafer boat stand column, and the plurality of layers of supporting legs are parallel to one another; each wafer boat stand column is also provided with a supporting stand column connected with each layer of supporting legs; and the openings are arranged between the adjacent layers of supporting legs on each wafer boat stand column and penetrate through the wafer boat stand columns. By adopting the technical scheme, the film forming quality on the edge of the wafer at the wafer boat stand column can be improved.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor manufacturing, in particular to a susceptor device. Background Art

[0002] In the process of semiconductor manufacturing, one method of forming a thin film on the surface of a wafer is to place the wafer on a susceptor device in a furnace tube, and then introduce a reaction gas into the furnace tube to form a semiconductor film layer required for semiconductor devices on the surface of the wafer.

[0003] However, in the actual manufacturing process, there is a problem that the film quality of the semiconductor film layer at the edge of the wafer deteriorates, such as the film layer being thinner and the density decreasing. Therefore, how to provide a technical solution to improve the film forming quality at the edge of the wafer has become a technical problem that needs to be solved urgently by those skilled in the art. Summary of the Utility Model

[0004] The technical problem solved by the utility model is to provide a susceptor device to improve the film forming quality at the susceptor column.

[0005] To solve the above problems, an embodiment of the utility model provides a susceptor device, including: a first base and a second base arranged oppositely; a plurality of susceptor columns connecting the first base and the second base; a plurality of layers of support feet for supporting the wafer are arranged on each susceptor column, and the plurality of layers of support feet are parallel to each other; a support column connected to each layer of support feet is further arranged on each susceptor column; an opening penetrating the susceptor column is arranged between adjacent layers of support feet on each susceptor column.

[0006] Optionally, the opening includes: a first opening that penetrates the support column along the diameter direction of the wafer; and a second opening that removes a part of each layer of support feet and is connected to the first opening.

[0007] Optionally, the opening includes: a third opening that penetrates the support column and each layer of support feet connected to the support column along the diameter direction of the wafer.

[0008] Optionally, the width of the opening is less than the width of the susceptor column; the height of the opening is less than or equal to the distance between adjacent layers of support feet; the width of the first opening is less than the width of the susceptor column, and the height of the first opening is greater than or equal to the height of each layer of support feet; the width of the second opening is less than the width of each layer of support feet, and the height of the second opening is greater than or equal to the height of each layer of support feet.

[0009] Optionally, the height of the third opening is greater than or equal to the height of each layer of support feet.

[0010] Optionally, the supporting feet are in a tapered structure that is wider at the top and narrower at the bottom; the number of the multiple crystal boat columns is at least 3.

[0011] Optionally, the side wall of the tapered structure is an inclined surface or a curved surface; the upper surface and / or the lower surface of the tapered structure is a convex surface or a flat surface.

[0012] Optionally, the included angle between the side wall of the tapered structure and the perpendicular line to the wafer surface is 30° to 60°.

[0013] Optionally, along the direction of the perpendicular line to the wafer surface, the multiple layers of supporting feet are arranged at equal intervals on each crystal boat column.

[0014] Optionally, the materials of the crystal boat columns and the supporting feet include one or more of quartz, high-temperature resistant plastics, ceramics, silicon carbide, and silicon nitride.

[0015] Compared with the prior art, the technical solution of the embodiment of the present utility model has the following advantages:

[0016] In the crystal boat device of the embodiment of the present utility model, an opening penetrating the crystal boat column is provided between adjacent layers of supporting feet on each crystal boat column; during the process of manufacturing, the reaction gas for forming the semiconductor film layer can flow through the opening to the wafer surface near the crystal boat column, so that the concentration of the reaction gas on the wafer surface near the crystal boat column is increased, thereby improving the quality of the semiconductor film layer on the wafer surface near the crystal boat column. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required to be used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only the embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained according to the provided drawings without creative efforts.

[0018] Figure 1 is a schematic structural diagram of a crystal boat device;

[0019] Figures 2 - 3 is a schematic structural diagram corresponding to the first embodiment of the crystal boat device of the present utility model;

[0020] Figures 4 - 5 is a schematic structural diagram of a supporting foot corresponding to the first embodiment of the crystal boat device of the present utility model;

[0021] Figures 6 - 7 is a schematic structural diagram of another supporting foot corresponding to the first embodiment of the crystal boat device of the present utility model;

[0022] Figures 8 - 9It is a schematic diagram of the shape of the upper surface of the conical structure corresponding to the first embodiment of the susceptor device of the present utility model;

[0023] Figures 10 - 11 It is a schematic diagram of the shape of the lower surface of the conical structure corresponding to the first embodiment of the susceptor device of the present utility model;

[0024] Figures 12 - 14 It is a schematic diagram of the structure of the support columns and support feet corresponding to the second embodiment of the susceptor device of the present utility model;

[0025] Figures 15 - 16 It is a schematic diagram of the structure of the connection between the support columns and the support feet corresponding to the third embodiment of the susceptor device of the present utility model. Detailed implementation manners

[0026] Next, the technical solutions in the embodiments of the present application will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present application.

[0027] In semiconductor manufacturing processes, there is a problem of poor film quality of the semiconductor film layer at the edge of the wafer; the following will analyze the reasons for the poor film quality of the semiconductor film layer at the edge of the wafer in conjunction with Figure 1 to analyze the reasons for the poor film quality of the semiconductor film layer at the edge of the wafer.

[0028] In the field of semiconductor manufacturing, a susceptor device is a device or container used to carry and transport wafers during semiconductor processing. As Figure 1 shown, the wafer 101 is located on the support feet 102 of the susceptor device 100, and the susceptor device 100 is placed in a furnace tube. During the film formation process, the reaction gas Gas has two flow directions in the cavity of the furnace tube: the upward flow direction F1 through the channel between the cavity wall of the furnace tube and the susceptor device 100; the horizontal flow direction F2 from the wafer edge to the wafer center between the wafers 101. The areas where the reaction gas flows through are divided into a blocking area D1 with susceptor columns 103 and a blocking area D2 without susceptor columns.

[0029] Relative to the blocking area D2 without susceptor columns, due to the Venturi effect, the gas flow rate increases and the gas pressure decreases in a small area on the back of the susceptor columns where the reaction gas flows through. This causes the reaction gas concentration at the wafer surface near the susceptor columns 103 to be less than the gas concentration at other positions, resulting in an increase in the gas deposition time in the blocking area D1 adjacent to the susceptor columns 103 on the wafer 101 compared to the non-blocking area D2. Therefore, the thickness of the semiconductor film layer deposited on the wafer near the position of the susceptor columns 103 is thinner and the density is lower compared to other positions on the wafer, affecting the quality of the semiconductor film layer at the edge of the wafer.

[0030] In view of the above technical problems, an embodiment of the present utility model provides a susceptor device, which can improve the film forming quality of the edge of a wafer.

[0031] In order to make the objectives, technical solutions, and advantages of the embodiments of the present utility model clearer, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model. Obviously, the described embodiments are only a part of the embodiments of the present utility model, rather than all the embodiments. Without conflict, the following embodiments and the features in the embodiments can be combined with each other.

[0032] First Embodiment

[0033] Figure 2 and Figure 3 are schematic structural diagrams corresponding to the first embodiment of the susceptor device of the present utility model. Among them, Figure 3 is Figure 2 the front view of the susceptor column in . The susceptor device includes: a first base 202 and a second base 204 which are oppositely arranged; a plurality of susceptor columns 206 connecting the first base 202 and the second base 204; a plurality of layers of support feet 210 for supporting a wafer 208 are arranged on each susceptor column 206, and the plurality of layers of support feet 210 are parallel to each other; a support column 212 connected to each layer of support feet 210 is further arranged on each susceptor column 206; an opening K0 penetrating the susceptor column is arranged between adjacent layers of support feet 210 on each susceptor column 206.

[0034] In the susceptor device of the embodiment of the present utility model, an opening K0 penetrating the susceptor column 206 is arranged between adjacent layers of support feet 210 on each susceptor column 206; thus, during the process fabrication, the reaction gas for forming a semiconductor film layer can flow through the opening K0 to the surface of the wafer near the susceptor column 206. Therefore, the concentration of the reaction gas on the surface of the wafer near the susceptor column 206 is increased, and thus the quality of the semiconductor film layer on the surface of the wafer near the susceptor column 206 is improved.

[0035] Continue to refer to Figure 2 and Figure 3 , in this embodiment, the susceptor device includes a first base 202 and a second base 204 which are oppositely arranged, and the first base 202 and the second base 204 are connected to the susceptor column 206. During the semiconductor manufacturing process, the first base 202 and the second base 204 can not only improve the structural stability of the susceptor device, but also reduce the probability of physical damage and contamination of the wafer 208. In some other embodiments, a plurality of bases can be designed according to actual needs.

[0036] The included angle between the first base 202 and the susceptor column 206 is greater than 0 degrees and less than or equal to 90 degrees; the included angle between the second base 204 and the susceptor column 206 is greater than 0 degrees and less than or equal to 90 degrees. In this embodiment, the included angles between the first base 202 and the second base 204 and the susceptor column 206 are 90 degrees.

[0037] The wafer 208 is located between the first base 202 and the second base 204, or the first base 202 and the second base 204 are interspersed between the wafers 208; in this embodiment, the wafer 208 is located between the first base 202 and the second base 204, increasing the structural stability of the susceptor device.

[0038] Continue to refer to Figure 2 and Figure 3 The shapes of the first base 202 and the second base 204 include any one of the following: circular cylinder, elliptical cylinder, square cylinder, irregular cylinder, etc.; the materials of the first base 202 and the second base 204 include metal materials (such as stainless steel, aluminum, etc.) or high-temperature resistant materials (such as quartz, ceramic, silicon carbide, and silicon nitride, etc.). The sizes of the first base 202 and the second base 204 need to cover the entire wafer. In the embodiment of the present application, the shapes of the first base 202 and the second base 204 are circular cylinders, and the materials of the first base 202 and the second base 204 are quartz.

[0039] The first base 202 and the second base 204 can be integrally formed with the susceptor column 206; or, the first base 202 and the second base 204 are separately formed and then fixed to the susceptor column 206 by means of installation. In this embodiment, the first base 202 and the second base 204 are integrally formed with the susceptor column.

[0040] Continue to refer to Figure 2 and Figure 3 The lower surface of the first base 202 is a flat surface, and the upper surface of the second base 204 is also a flat surface. In the susceptor device, all the upper and lower surfaces of the wafers face flat surfaces, that is, the environment for semiconductor film formation on the wafers is kept as consistent as possible, reducing the difference in semiconductor film formation between the wafers 208.

[0041] It should be noted that when fabricating the semiconductor film layer, in order to further maintain the consistency of the semiconductor film formation environment on all the wafers 208 in the susceptor device, dummy wafers can be used at the bottom and top of the susceptor device, that is, all the wafers 208 are located between the dummy wafers to improve the gas flow rate and temperature distribution.

[0042] Continue to refer to Figure 2 and Figure 3, The susceptor device includes multiple susceptor columns 206 connecting the first base 202 and the second base 204. The multiple susceptor columns 206 are used to provide structural support for the susceptor device to maintain the shape and rigidity of the susceptor device and ensure stability during handling and processing.

[0043] The number of susceptor columns 206 can be determined according to the size of the susceptor device and the weight of the wafers carried. The number of the multiple susceptor columns 206 is at least 3; in this embodiment, the number of susceptor columns 206 is 3.

[0044] In this embodiment, the 3 susceptor columns 206 are usually arranged in an equilateral triangle to improve the overall structural stability of the susceptor device, help evenly distribute the weight of the wafers, and reduce stress concentration caused by asymmetry. In other embodiments, the 3 susceptor columns 206 are arranged in a right triangle, an acute triangle or an obtuse triangle.

[0045] The shape of the susceptor column 206 includes any one of the following: a circular column, an elliptical column, a square column, an irregular column, etc.; in this embodiment, the shape of the susceptor column 206 is a square column.

[0046] The material of the susceptor column 206 is usually made of materials with high temperature resistance and stable chemical properties to maintain the structural stability of the susceptor device under extreme conditions in the semiconductor manufacturing process and reduce damage to the wafers caused by thermal stress or mechanical stress. The material of the susceptor column 206 can include one or more of quartz, ceramics, silicon carbide, and silicon nitride. In this embodiment, the material of the susceptor column 206 is quartz.

[0047] Continue to refer to Figure 2 and Figure 3 , Multiple layers of support feet 210 for supporting the wafers are provided on each susceptor column 206, and the support feet 210 are used to support and position the wafers. The multiple layers of support feet 210 are parallel to each other to maintain the flatness of the wafers 208 on the susceptor device and prevent local warping and deformation of the wafers 208; especially at high temperatures, local warping and deformation of the wafers 208 will be aggravated due to different coefficients of thermal expansion of the materials, and by arranging the multiple layers of support feet 210 parallel to each other, the local warping and deformation of the wafers 208 caused by different coefficients of thermal expansion of the materials at high temperatures can be reduced.

[0048] Continue to refer to Figure 2 and Figure 3, along the vertical direction of the surface of the wafer 208, the multi-layer support feet 210 are arranged at equal intervals on each susceptor column 206, that is, the distance d1 between each layer of wafers 208 is equal. In addition, the distance between the first base 202 and the adjacent wafer is d0, and the distance between the second base 204 and the adjacent wafer is d2. In this embodiment, the distances d0, d1, and d2 are equal, so that the temperature, gas concentration, gas flow rate, etc. are uniform near each layer of wafers. In other embodiments, the distances d0, d1, and d2 may not be equal; for example, the distance d0 is equal to the distance d1 but not equal to the distance d2; for example, the distance d0 is equal to the distance d2 but not equal to the distance d1; for example, the distance d1 is equal to the distance d2 but not equal to the distance d0; for example, the distances d0, d1, and d2 are all not equal.

[0049] Figures 4 - 5 is a schematic diagram of a support foot structure corresponding to the first embodiment of the susceptor device of the present invention. Among them, Figure 4 is a spatial structure diagram of a support foot of the first embodiment of the susceptor device, Figure 5 is along Figure 4 the cross-sectional view of the A1A2 direction in Figure 4 and Figure 5 . Referring to Figure 4 and Figure 5 , the support foot 210 is a tapered structure 210a that is wider at the top and narrower at the bottom; the two side walls of the tapered structure 210a are curved surfaces QM (as shown in

[0050] Figures 6 - 7 is a schematic diagram of another support foot structure corresponding to the first embodiment of the susceptor device of the present invention. Among them, Figure 6 is a spatial structure diagram of another support foot of the first embodiment of the susceptor device, Figure 7 is along Figure 6 the cross-sectional view of the B1B2 direction in Figure 6 and Figure 7 . Referring to Figure 6 and Figure 7As shown, it flows to the surface of the wafer 208 near the susceptor column 206. That is, the inclined surfaces XM on both side walls of the conical structure 210b play a role in guiding the reaction gas.

[0051] The material of the support leg 210 includes one or more of quartz, high-temperature resistant plastic, ceramic, silicon carbide, and silicon nitride. In this embodiment, the material of the support leg 210 is quartz.

[0052] The support leg 210 can be integrally formed with the susceptor column 206; or, the support leg 210 is formed separately and then fixed to the susceptor column 206 by means of installation. In this embodiment, the support leg 210 is integrally formed with the susceptor column 206 to ensure the structural stability of the susceptor device.

[0053] Figures 8 - 9 is a schematic diagram of the shape of the upper surface of the conical structure corresponding to the first embodiment of the susceptor device of the present invention, where Figure 8 is a schematic diagram of one shape of the upper surface of the conical structure corresponding to the first embodiment of the susceptor device, Figure 9 is another schematic diagram of the shape of the upper surface of the conical structure corresponding to the first embodiment of the susceptor device. Referring to Figure 8 and Figure 9 , the shape of the upper surface USF of the conical structure includes any one of the following: convex surface (such as Figure 8 ), flat surface (such as Figure 9 ), concave surface (not shown); the upper surface USF of the conical structure is a convex surface or a concave surface, which can reduce the contact area between the wafer 208 and the support leg 210. For example, it can reduce the film formation temperature difference between the wafer 208 at the support leg 210 and the wafer 208 outside the support leg 210. In this embodiment, the upper surface USF of the conical structure is a convex surface. In other embodiments, the upper surface USF of the conical structure is set as a concave surface.

[0054] Figures 10 - 11 is a schematic diagram of the shape of the lower surface of the conical structure corresponding to the first embodiment of the susceptor device of the present invention, where Figure 10 is a schematic diagram of one shape of the lower surface of the conical structure corresponding to the first embodiment of the susceptor device, Figure 11 is another schematic diagram of the shape of the lower surface of the conical structure corresponding to the first embodiment of the susceptor device. Referring to Figure 10 and Figure 11 , the shape of the lower surface DSF of the conical structure includes any one of the following: convex surface (such as Figure 10 ), flat surface (such as Figure 11 ). In this embodiment, the lower surface DSF of the conical structure is a convex surface to cooperate with the two side walls of the conical structure to guide the reaction gas to the surface of the wafer 208 near the susceptor column 206.

[0055] It should be noted that, with continued reference to Figure 7 , the angle J between the perpendicular VL to the surface of the wafer 208 and the side walls on both sides of the conical structure should not be too large or too small; if it is too large, the side walls of the conical structure cannot play a drainage effect; if it is too small, the reaction gas flowing onto the side walls on both sides of the conical structure is easily reflected by the side walls and moves away from the susceptor column 206. In this embodiment, the angle J between the side walls on both sides of the conical structure and the perpendicular VL to the surface of the wafer 208 is 30° to 60°.

[0056] It should be noted that, with continued reference to Figure 6 , in the plane of the wafer, along the direction perpendicular to the diameter of the wafer, the width w0 of the conical structure should not be too large or too small; if it is too large, the reaction gas is not easy to flow to directly below the conical structure, affecting the quality of the semiconductor film layer on the wafer at the susceptor column 206; if it is too small, the surface of the wafer is easily scratched when the wafer is taken and placed in the susceptor device. In this embodiment, the width w0 of the conical structure is not less than 2 mm and not more than 5 mm.

[0057] It should be noted that, with continued reference to Figure 7 , the distance d3 between the lower surface DSF of the conical structure and the surface of the wafer should not be too large or too small; if it is too large, the number of wafers that can be loaded in the susceptor device is limited; if it is too small, it is not conducive to taking and placing the wafer in the susceptor device. In this embodiment, the distance d3 between the lower surface DSF of the conical structure and the surface of the wafer is not less than 5 mm and not more than 10 mm.

[0058] With continued reference to Figure 2 and Figure 3 , a support column 212 connected to each layer of support feet 210 is further provided on each susceptor column 206. The support column 212 is used to connect the support feet 210 to the susceptor column 206.

[0059] The shape of the support column 212 includes any one of the following: a circular column, an elliptical column, a square column, an irregular column, etc.; in this embodiment, the shape of the support column 212 is a square column.

[0060] The material of the support column 212 includes one or more of: quartz, high-temperature resistant plastic, ceramic, silicon carbide, and silicon nitride. In this embodiment, the material of the support column 212 is quartz.

[0061] The support column 212 can be integrally formed with the susceptor column 206; or, the support column 212 is formed separately and then fixed to the susceptor column 206 by means of installation. In this embodiment, the support column 212 is integrally formed with the susceptor column 206 to ensure the structural stability of the susceptor device.

[0062] It should be noted that the first base 202, the second base 204, the susceptor columns 206, the support feet 210, and the support columns 212 are integrally formed, which can have the following effects: First, it can increase the stability and firmness of the susceptor device structure; Second, it simplifies the manufacturing process of the susceptor device; Third, during thermal stress or mechanical vibration, for example, it can prevent the support feet from falling off and damaging the wafers.

[0063] Continue to refer to Figure 2 and Figure 3 , the opening K0 is arranged between adjacent layer support feet 210 on each susceptor column 206 and penetrates through the susceptor column 206. In this embodiment, the width w1 of the opening K0 is smaller than the width w2 of the susceptor column; the height h0 of the opening K0 is less than or equal to the distance d4 between adjacent layer support feet.

[0064] In this embodiment, when manufacturing the susceptor device, liquid quartz is injected into the mold for manufacturing the susceptor device. After the quartz in the mold cools, the blank susceptor device is processed to form a susceptor device for semiconductor device manufacturing.

[0065] In this embodiment, in order to facilitate the operator to move the susceptor device in a high-temperature environment, a handle structure (not shown) can be provided on the susceptor device; the shape and position of the handle structure are set according to actual needs.

[0066] Second Embodiment

[0067] For the same parts of the structure corresponding to the second embodiment of the susceptor device of the present invention and the structure corresponding to the first embodiment of the susceptor device, reference can be made to the description of Figures 2 - 3 . In the structure corresponding to the second embodiment of the susceptor device, a first opening penetrating the support column and a second opening formed after removing a part of each layer of support feet are formed; thus, the opening arranged between adjacent layer support feet on each susceptor column and penetrating through the susceptor column can include: the first opening and the second opening.

[0068] Figures 12 - 14 is a schematic structural diagram of the support column and support feet corresponding to the second embodiment of the susceptor device of the present invention, where Figure 12 is a three-dimensional structural diagram of the support column of the second embodiment of the susceptor device, Figure 13 is a three-dimensional structural diagram of one of the support feet of the second embodiment of the susceptor device, Figure 14 is another three-dimensional structural diagram of the support feet of the second embodiment of the susceptor device. Figure 13 Differing from Figure 14 only in that Figure 13 the side wall of the support foot in Figure 14The side wall of the supporting feet therein is an inclined plane. Refer to Figure 12 , the first opening K1 penetrates through the supporting column 212 along the wafer diameter direction; Refer to 13 and 14, the second opening K2 removes a part of each layer of supporting feet 210, and the first opening K1 and the second opening K2 are connected, that is, Figure 12 The midpoints a1, a2, a3, a4 and Figure 13 in or Figure 14 The points b1, b2, b3, b4 therein are correspondingly connected. During the semiconductor device manufacturing process, the reaction gas for forming the semiconductor film layer can flow through the first opening K1 and the second opening K2 in sequence to the wafer surface near the susceptor column 206, thereby increasing the reaction gas concentration on the wafer surface near the susceptor column 206, and further improving the quality of the semiconductor film layer on the wafer surface near the susceptor column 206.

[0069] The width w3 of the first opening K1 is smaller than the width w2 of the susceptor column 206, and the height h1 of the first opening K1 is greater than or equal to the height h2 of each layer of supporting feet; the width w4 of the second opening K2 is smaller than the bottom width w5 of each layer of supporting feet, and the height h3 of the second opening K2 is greater than or equal to the height h2 of each layer of supporting feet. In this embodiment, the width w3 of the first opening K1 is smaller than the width w2 of the susceptor column 206, and the height h1 of the first opening K1 is equal to the height h2 of each layer of supporting feet; the width w4 of the second opening K2 is smaller than the bottom width w5 of each layer of supporting feet, and the height h3 of the second opening K2 is equal to the height h2 of each layer of supporting feet.

[0070] The shape of the first opening K1 includes any one of the following: a cone, a circular cylinder, an elliptical cylinder, a square cylinder, an irregular cylinder, etc.; in this embodiment, the shape of the first opening K1 is a square cylinder.

[0071] The shape of the second opening K2 includes any one of the following: a circular cylinder, an elliptical cylinder, a square cylinder, a frustum of a cone with a narrow top and a wide bottom, an irregular cylinder, etc.; in this embodiment, the shape of the second opening K2 is a square cylinder.

[0072] Third Embodiment

[0073] For the structure corresponding to the third embodiment of the susceptor device of the present utility model, the same parts as the corresponding structure of the first embodiment of the susceptor device structure can be referred to the description of Figures 2 - 3 . In the structure corresponding to the third embodiment of the susceptor device, a third opening is formed; the third opening penetrates through the supporting column and each layer of supporting feet connected to the supporting column along the wafer diameter direction; thus, between adjacent layers of supporting feet disposed on each susceptor column and the opening penetrating the susceptor column may include: the third opening.

[0074] Figures 15 - 16 FIG. 2 is a schematic structural diagram of the connection between the support column and the support foot corresponding to the third embodiment of the susceptor device of the present utility model, wherein, Figure 15 FIG. 3 is a spatial structure diagram of the connection between the support column and the support foot of the third embodiment of the susceptor device, Figure 16 FIG. 4 is another spatial structure diagram of the connection between the support column and the support foot of the third embodiment of the susceptor device. Figure 15 The difference between Figure 16 and Figure 15 is only that Figure 16 the side wall of the support foot in Figure 15 and Figure 16 is a curved surface, and the side wall of the support foot in

[0075] is an inclined surface. Referring to

[0076] FIG. 5 and FIG. 6, the third opening K3 runs through the support column 212 and each layer of support feet 210 connected to the support column 212 along the diameter direction of the wafer 208. During the semiconductor device manufacturing process, the reaction gas for forming the semiconductor film layer can flow through the third opening K3 to the surface of the wafer near the susceptor column 206, so the concentration of the reaction gas on the surface of the wafer near the susceptor column 206 is increased, thereby further improving the quality of the semiconductor film layer on the surface of the wafer near the susceptor column 206.

[0077] It should be noted that the "embodiment" referred to in the present disclosure means specific features, structures or characteristics that can be included in at least one implementation manner of the present disclosure. And in the description of the present disclosure, terms such as "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of the indicated technical features. Thus, features defined with terms such as "first", "second", etc. may explicitly or implicitly include one or more of such features. Moreover, terms such as "first" and "second" are used to distinguish similar objects and do not have to be used to describe a specific order or indicate importance. It can be understood that such terms can be interchanged under appropriate circumstances so that the embodiments of the present disclosure described here can be implemented in an order other than that shown or described.

[0078] Although the present utility model has been disclosed above with the preferred embodiments, it is not intended to limit the present utility model. Any person skilled in the art can make possible changes and modifications to the technical solution of the present utility model without departing from the spirit and scope of the present utility model. Therefore, all contents that do not depart from the technical solution of the present utility model, any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present utility model, shall fall within the protection scope of the technical solution of the present utility model.

Claims

1. A susceptor device, characterized in that, Comprising: A first base and a second base which are oppositely arranged; Multiple susceptor columns connecting the first base and the second base; On each susceptor column, there are multiple layers of support feet for supporting wafers, and the multiple layers of support feet are parallel to each other; on each susceptor column, there are also support columns connected to each layer of support feet; An opening penetrating the susceptor column and disposed between adjacent layers of support feet on each susceptor column.

2. The susceptor device according to claim 1, wherein The opening includes: A first opening which penetrates the support column along the wafer diameter direction; And a second opening which removes a part of each layer of support feet and is connected to the first opening.

3. The susceptor device according to claim 1, characterized in that, The opening includes: a third opening which penetrates the support column and each layer of support feet connected to the support column along the wafer diameter direction.

4. The susceptor device according to claim 2, wherein, The width of the opening is less than the width of the susceptor column; the height of the opening is less than or equal to the distance between adjacent layers of support feet; The width of the first opening is less than the width of the susceptor column, and the height of the first opening is greater than or equal to the height of each layer of support feet; The width of the second opening is less than the width of each layer of support feet, and the height of the second opening is greater than or equal to the height of each layer of support feet.

5. The susceptor device according to claim 3, wherein The height of the third opening is greater than or equal to the height of each layer of support feet.

6. The susceptor device according to claim 1, characterized in that, The support feet are in a tapered structure with a wider upper part and a narrower lower part; the number of the multiple susceptor columns is at least 3.

7. The susceptor device according to claim 6, characterized in that, The side wall of the tapered structure is an inclined surface or a curved surface; the upper surface and / or the lower surface of the tapered structure is a convex surface or a flat surface.

8. The susceptor device according to claim 6, wherein, The angle between the side wall of the tapered structure and the perpendicular line of the wafer surface is 30° to 60°.

9. The susceptor device according to claim 1, wherein Along the perpendicular line direction of the wafer surface, the multiple layers of support feet are arranged at equal intervals on each susceptor column.

10. The susceptor device according to claim 1, wherein The materials of the susceptor column and the support feet include one or more of quartz, high-temperature resistant plastic, ceramic, silicon carbide and silicon nitride.

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