Chemical vapor deposition furnace for producing silicon carbide coating

Abstract

The utility model discloses a chemical vapor deposition furnace for producing a silicon carbide coating, and relates to the technical field of deposition furnaces, a deposition mechanism of the chemical vapor deposition furnace can select a first bidirectional screw to drive two first threaded seats to be close to each other so as to drive two groups of connecting rods to be close to each other, namely, the distance between the two groups of connecting rods can be adjusted; the device is further provided with a driving mechanism, the driving mechanism can drive the fixing base to rotate, then the tubular base body is driven to rotate, the base body rotates around the circle center in the deposition furnace at a low speed, the surface of the tubular base body can make contact with a high-concentration new material, and the high-concentration new material is obtained. The same surface deposition effect of the tubular substrate is ensured, the occurrence of long deposition time caused by the fact that part of the surface of the tubular substrate is located in a low-concentration new material area is reduced, the deposition efficiency is improved, and the finished product quality is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of deposition furnaces, in particular to a chemical vapor deposition furnace for producing silicon carbide coatings. Background Technique

[0002] Silicon carbide coatings are generally prepared on the surface of parts by physical or chemical vapor deposition, spraying and other methods. Among them, the method of chemical vapor deposition is more commonly used, and then a chemical vapor deposition furnace is required. Chemical vapor deposition is the most widely used technology in the semiconductor industry to deposit a variety of materials, including a wide range of insulating materials, most metal materials and metal alloy materials. Generally, chemical vapor deposition can be understood as introducing two or more gaseous raw materials into a reaction chamber, and then a gas-phase thermal decomposition reaction occurs between the two raw materials to form a new material, which is deposited on the surface of the substrate wafer, so that the substrate obtains a better surface quality effect; among them, the gaseous raw materials are generally gases such as metal vapors, volatile metal halides, hydrides or metal organic compounds;

[0003] For example, the patent network discloses a chemical vapor deposition furnace for producing silicon carbide coatings (publication number: CN212770951U). This device uses two groups of connecting rods and extrusion blocks to fix the tubular substrate on it. However, the distance between the two groups of connecting rods cannot be adjusted, resulting in a certain length of the fixed substrate, so that the applicable range of this device is small. Therefore, those skilled in the art have proposed a chemical vapor deposition furnace for producing silicon carbide coatings. Content of the Utility Model

[0004] In view of the deficiencies of the prior art, the utility model provides a chemical vapor deposition furnace for producing silicon carbide coatings. The deposition mechanism of this device can rotate the first bidirectional screw to drive two groups of connecting rods to closely approach each other to adjust the distance between the two groups of connecting rods, solving the problems in the above background.

[0005] To achieve the above purposes, the utility model is realized through the following technical solutions: A chemical vapor deposition furnace for producing silicon carbide coatings, comprising:

[0006] A deposition mechanism for depositing a silicon carbide coating on the surface of a substrate;

[0007] The deposition mechanism includes a deposition furnace. A moving seat is installed on the inner bottom surface of the deposition furnace. A moving groove is formed on the upper surface of the moving seat. A first bidirectional screw is rotatably installed in the moving groove. Each thread of the first bidirectional screw is provided with a first threaded seat adapted to the moving groove. One end of the first bidirectional screw extends outside the deposition furnace and is installed with a first knob. The upper surface of each first threaded seat is installed with a side plate;

[0008] A driving mechanism for driving the base to rotate.

[0009] As a further technical solution of the present invention, the deposition mechanism further includes two fixed seats rotatably installed on the sides of the two side plates. A strip-shaped groove is formed on the side of each fixed seat, and a second bidirectional screw is rotatably installed in each strip-shaped groove. A second thread seat adapted to the strip-shaped groove is provided on each thread of each second bidirectional screw. One end of each second bidirectional screw extends outside the fixed seat and is installed with a second knob.

[0010] As a further technical solution of the present invention, a connecting rod is installed on the side of each second thread seat, and an extrusion block is installed near the end of the side of each connecting rod. A conveying pipe is installed at the center of the upper surface of the deposition furnace, and the lower end of the conveying pipe extends into the deposition furnace and is installed with a gas distribution pipe.

[0011] As a further technical solution of the present invention, the driving mechanism includes a motor installed on the upper surface of the deposition furnace and on one side of the conveying pipe, and two rotating seats are correspondingly installed on the upper surface of the deposition furnace on one side of the motor.

[0012] As a further technical solution of the present invention, a main rod fixedly connected to the driving end of the motor is rotatably installed on the two rotating seats. A receiving groove is formed at the other end of the main rod, and a sub-rod is slidably arranged in the receiving groove. Two sliding grooves communicating with the receiving groove are correspondingly formed on the side surface of the main rod, and a slider fixedly connected to the sub-rod is slidably arranged in each sliding groove.

[0013] As a further technical solution of the present invention, a connecting plate is rotatably installed at the end of the sub-rod. An extension rod is rotatably installed at the center of the side surface of one of the fixed seats, and the end of the extension rod extends outside the deposition furnace and is rotatably connected to the side surface of the connecting plate. Synchronous wheels are installed through the connecting plate at the ends of the extension rod and the sub-rod, and a synchronous belt is provided on the two synchronous wheels.

[0014] Beneficial effects

[0015] The present invention provides a chemical vapor deposition furnace for the production of silicon carbide coatings. Compared with the prior art, it has the following beneficial effects:

[0016] 1. A chemical vapor deposition furnace for the production of silicon carbide coatings. The deposition mechanism of the present device can select the first bidirectional screw to drive the two first thread seats to approach each other, thereby driving the two groups of connecting rods to approach each other, so as to adjust the distance between the two groups of connecting rods, enabling the device to adapt to tubular substrates of various lengths and increasing the practicability of the device.

[0017] 2. A chemical vapor deposition furnace for producing a silicon carbide coating. The device is also provided with a driving mechanism. The driving mechanism can drive the fixed seat to rotate, thereby driving the tubular substrate to rotate, making the substrate rotate slowly around the center in the deposition furnace, enabling the surface of the tubular substrate to come into contact with the high-concentration new material, ensuring the same deposition effect on the surface of the tubular substrate, reducing the occurrence of the situation where part of the surface of the tubular substrate is in a low-concentration new material area, resulting in a long deposition time, increasing the deposition efficiency, and improving the product quality. Description of the Drawings

[0018] Figure 1 is a schematic structural diagram of a chemical vapor deposition furnace for producing a silicon carbide coating;

[0019] Figure 2 is a cross-sectional view of a chemical vapor deposition furnace for producing a silicon carbide coating;

[0020] Figure 3 is Figure 2 the enlarged view of part A in

[0021] Figure 4 is a schematic structural diagram of the deposition mechanism of a chemical vapor deposition furnace for producing a silicon carbide coating;

[0022] Figure 5 is a schematic structural diagram of the telescopic rod component of a chemical vapor deposition furnace for producing a silicon carbide coating.

[0023] In the figure: 1, deposition furnace; 2, moving seat; 3, moving groove; 4, first bidirectional screw; 5, first threaded seat; 6, first knob; 7, side plate; 8, fixed seat; 9, strip-shaped groove; 10, second bidirectional screw; 11, second threaded seat; 12, connecting rod; 13, extrusion block; 14, second knob; 15, extension rod; 16, rotating seat; 17, main rod; 18, receiving groove; 19, sliding groove; 20, sub-rod; 21, slider; 22, motor; 23, synchronous pulley; 24, synchronous belt; 25, delivery pipe; 26, connecting plate. Detailed Embodiment

[0024] The following further elaborates on the present disclosure in conjunction with the drawings and embodiments. It can be understood that the specific embodiments described herein are only used to explain the relevant content and do not limit the present disclosure. Additionally, it should be noted that for the sake of description, only the parts related to the present disclosure are shown in the drawings.

[0025] Figure 1 is a schematic structural diagram of a chemical vapor deposition furnace for producing a silicon carbide coating;

[0026] Figure 2 is a cross-sectional view of a chemical vapor deposition furnace for producing a silicon carbide coating;

[0027] Figure 3 For Figure 2 The enlarged view of part A in

[0028] Figure 4 It is a schematic structural diagram of a deposition mechanism of a chemical vapor deposition furnace for producing a silicon carbide coating;

[0029] Figure 5 It is a schematic structural diagram of a telescopic rod component of a chemical vapor deposition furnace for producing a silicon carbide coating;

[0030] As Figures 1 - 5 shown, a chemical vapor deposition furnace for producing a silicon carbide coating according to the present disclosure may include components such as a deposition mechanism and a driving mechanism;

[0031] As Figures 1 - 5 shown, the deposition mechanism includes a deposition furnace 1, a moving seat 2, a moving groove 3, a first bidirectional screw 4, a first threaded seat 5, a first knob 6, side plates 7, fixed seats 8, strip-shaped grooves 9, a second bidirectional screw 10, second threaded seats 11, connecting rods 12, extrusion blocks 13, second knobs 14, and a delivery pipe 25;

[0032] The moving seat 2 is installed at the center of the inner bottom surface of the deposition furnace 1. The moving groove 3 is opened at the center of the upper surface of the moving seat 2. The first bidirectional screw 4 is rotatably installed inside the moving groove 3. Two first threaded seats 5 are arranged on two threads of the first bidirectional screw 4. Each side plate 7 is installed on the upper surface of the corresponding first threaded seat 5. The first knob 6 is installed at the end of the first bidirectional screw 4 extending outside the deposition furnace 1. Each fixed seat 8 is rotatably installed on the side of the corresponding side plate 7. Each strip-shaped groove 9 is opened on the side of the corresponding fixed seat 8. Each second bidirectional screw 10 is rotatably installed inside the corresponding strip-shaped groove 9. Each group of two second threaded seats 11 is arranged on two threads of the corresponding second bidirectional screw 10 and is adapted to the strip-shaped groove 9. Each connecting rod 12 is installed on the side of the corresponding second threaded seat 11. Each extrusion block 13 is installed on the side of the corresponding connecting rod 12. Each second knob 14 is installed at the upper end of the corresponding second bidirectional screw 10 extending outside the fixed seat 8. The delivery pipe 25 is installed on the upper surface of the deposition furnace 1 and its lower end extends into the deposition furnace 1 and is installed with a gas distribution pipe;

[0033] As Figures 1 - 5 shown, the driving mechanism includes an extension rod 15, a rotating seat 16, a main rod 17, a receiving groove 18, a sliding groove 19, a secondary rod 20, a slider 21, a motor 22, a synchronous pulley 23, a synchronous belt 24, and a connecting plate 26;

[0034] The extension rod 15 is installed at the center of the side surface of one of the fixed seats 8 and penetrates through the side plate 7. The connecting plate 26 is rotatably installed at the end of the extension rod 15 extending outside the deposition furnace 1. The motor 22 is installed on the upper surface of the deposition furnace 1 and is on one side of the conveying pipe 25. Two rotating seats 16 are installed on the upper surface of the deposition furnace 1 and are on one side of the motor 22. The main rod 17 is rotatably installed on the two rotating seats 16. A receiving groove 18 is opened at one end of the main rod 17. The auxiliary rod 20 is slidably arranged in the receiving groove 18 and its end is rotatably connected to the connecting plate 26. Two sliding grooves 19 are opened on the side surface of the main rod 17 and communicate with the receiving groove 18. Each slider 21 is slidably arranged in the corresponding sliding groove 19 and communicates with the auxiliary rod 20. Two synchronous pulleys 23 are installed at the ends of the auxiliary rod 20 and the extension rod 15 penetrating through the connecting plate 26. The synchronous belt 24 is arranged on the two synchronous pulleys 23;

[0035] During use, open the furnace door of the deposition furnace 1. Then, the tubular substrate is sent into the center of the deposition furnace 1 and the two ports are placed horizontally. Rotate the first knob 6 to drive the first bidirectional screw 4 to rotate, driving the two first threaded seats 5 to approach each other, thereby driving the two side plates 7 to approach each other, driving the two groups of connecting rods 12 to approach each other until the two groups of connecting rods 12 are inserted into the two ports of the substrate. Then, rotate the two second knobs 14 in the same direction to drive the two second bidirectional screws 10 to rotate in the same direction, driving each group of two second threaded seats 11 to move away from each other, driving each group of two connecting rods 12 to move away from each other until the four connecting rods 12 cooperate with the four pressing blocks 13 to press and fix the substrate, thereby fixing the substrate inside the deposition furnace 1. Then, send the gaseous raw materials for production into the conveying pipe 25, and the materials are evenly sent into the deposition furnace 1 through the air distribution pipe. After the reaction, a new material is formed to form a silicon carbide coating on the surface of the substrate;

[0036] When the side plate 7 moves, it drives the auxiliary rod 20 to slide in the receiving groove 18 through the extension rod 15 and the connecting plate 26. At the same time, the moving receiving groove 18 drives the two sliders 21 to slide in the sliding grooves 19. At the same time, during the deposition process, the running motor 22 drives the main rod 17 to rotate. The rotating main rod 17 drives the auxiliary rod 20 to rotate. The rotating auxiliary rod 20 drives the fixed seat 8 connected to it to rotate through the synchronous pulley 23, the synchronous belt 24 and the extension rod 15. The rotating fixed seat 8 drives the tubular substrate on it to rotate, so that the surface of the tubular substrate can be in contact with the high-concentration new material, ensuring that the deposition effect on the surface of the tubular substrate is the same, reducing the occurrence of the situation where part of the surface of the tubular substrate is in the low-concentration new material area, resulting in a long deposition time, increasing the deposition efficiency and improving the product quality.

[0037] In the description of this specification, the descriptions referring to terms such as "one embodiment / way", "some embodiments / ways", "example", "specific example", or "some examples", etc., mean that the specific features, structures, materials, or characteristics described in connection with that embodiment / way or example are included in at least one embodiment / way or example of this application. In this specification, the schematic expressions of the above terms do not necessarily refer to the same embodiment / way or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments / ways or examples. In addition, without contradiction, those skilled in the art can combine and combine the different embodiments / ways or examples described in this specification and the features of different embodiments / ways or examples.

[0038] In addition, the terms "first" and "second" are only used for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, the features defined with "first" and "second" may explicitly or implicitly include at least one of such features. In the description of this application, "a plurality" means at least two, such as two, three, etc., unless otherwise specifically and clearly defined.

[0039] Those skilled in the art should understand that the above embodiments are only for clearly explaining the present disclosure and are not intended to limit the scope of the present disclosure. For those skilled in the art, other changes or variations can be made on the basis of the above disclosure, and these changes or variations are still within the scope of the present disclosure.

Claims

1. A chemical vapor deposition furnace for producing a silicon carbide coating, characterized in that, Comprising: A deposition mechanism for depositing a silicon carbide coating on the surface of a substrate; The deposition mechanism includes a deposition furnace (1), a moving seat (2) is installed on the inner bottom surface of the deposition furnace (1), a moving groove (3) is formed on the upper surface of the moving seat (2), a first bidirectional screw (4) is rotatably installed in the moving groove (3), a first thread seat (5) adapted to the moving groove (3) is provided on each thread of the first bidirectional screw (4), one end of the first bidirectional screw (4) extends outside the deposition furnace (1) and is installed with a first knob (6), and side plates (7) are installed on the upper surface of each first thread seat (5); A driving mechanism for driving the substrate to rotate.

2. The chemical vapor deposition furnace for producing a silicon carbide coating according to claim 1, wherein The deposition mechanism further includes two fixed seats (8) rotatably installed on the sides of the two side plates (7), a strip-shaped groove (9) is formed on the side of each fixed seat (8), a second bidirectional screw (10) is rotatably installed in each strip-shaped groove (9), a second thread seat (11) adapted to the strip-shaped groove (9) is provided on each thread of each second bidirectional screw (10), and one end of each second bidirectional screw (10) extends outside the fixed seat (8) and is installed with a second knob (14).

3. The chemical vapor deposition furnace for producing silicon carbide coating according to claim 2, wherein A connecting rod (12) is installed on the side of each second thread seat (11), a pressing block (13) is installed near the end of the side of each connecting rod (12), a delivery pipe (25) is installed at the center of the upper surface of the deposition furnace (1), and the lower end of the delivery pipe (25) extends into the deposition furnace (1) and is installed with a gas distribution pipe.

4. A chemical vapor deposition furnace for producing a silicon carbide coating according to claim 3, characterized in that The driving mechanism includes a motor (22) installed on the upper surface of the deposition furnace (1) and on one side of the delivery pipe (25), and two rotating seats (16) are correspondingly installed on the upper surface of the deposition furnace (1) on one side of the motor (22).

5. The chemical vapor deposition furnace for producing a silicon carbide coating according to claim 4, characterized in that, A main rod (17) with one end fixedly connected to the driving end of the motor (22) is rotatably installed on the two rotating seats (16) together, a receiving groove (18) is formed at the other end of the main rod (17), a sub-rod (20) is slidably arranged in the receiving groove (18), two sliding grooves (19) communicating with the receiving groove (18) are correspondingly formed on the side of the main rod (17), and a sliding block (21) fixedly connected to the sub-rod (20) is slidably arranged in each sliding groove (19).

6. The chemical vapor deposition furnace for producing a silicon carbide coating according to claim 5, characterized in that, A connecting plate (26) is rotatably installed at the end of the sub-rod (20), an extension rod (15) with the end extending outside the deposition furnace (1) and rotatably connected to the side of the connecting plate (26) is rotatably installed at the center of the side of one of the fixed seats (8), the ends of the extension rod (15) and the sub-rod (20) penetrate through the connecting plate (26) and are installed with synchronous wheels (23), and a synchronous belt (24) is provided on the two synchronous wheels (23) together.

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