Heating device of monocrystalline silicon wafer texturing additive
By using a multi-layer spiral heating tube and a stirring mechanism in the heating device of single crystal silicon wafer wool-making additive, the problem of low heating efficiency in the prior art is solved, uniform heating inside the solution is achieved, and the heating effect of the wool-making additive is improved.
Patent Information
- Application Number
- CN202422414590.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-08
- Publication Date
- 2025-07-18
- Estimated Expiration
- 2034-10-08
AI Technical Summary
The heat of the existing single crystal silicon wafer velvet-making additive is transferred from the outside to the inside, resulting in low heating efficiency and the inability to ensure uniform heat inside the solution, which affects the heating effect of the velvet-making additive.
A multi-layer spiral heating pipe and a stirring mechanism are used to improve the heating area and uniformity by heating and stirring internally.
The uniform heating inside the solution is achieved, and the heating effect of single crystal silicon wafer wool-making additive is improved.
Smart Images
Figure CN223118589U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of production equipment for texturing additives, and particularly relates to a heating device for texturing additives of single crystal silicon wafers. Background Art
[0002] Texturing additives refer to chemical additives that are beneficial to the reaction results and product performance during the texturing process of single crystal silicon solar cells. The current single crystal texturing process flow adopted by solar cells is: alkaline texturing - spray water washing - flowing water washing - pickling - spray water washing - flowing water washing - hot water washing - hot air drying. During the hot water washing process, the solution needs to be heated. However, for the existing heating device for texturing additives of single crystal silicon wafers, a heating tank is used for heating, and the heat is transferred from the outside to the inside, resulting in low heating efficiency, inability to ensure uniform heat inside the solution, and easy to affect the heating effect of the texturing additives. Content of the Utility Model
[0003] Aiming at the above deficiencies in the prior art, the utility model provides a heating device for texturing additives of single crystal silicon wafers, aiming to solve the problems of the existing heating device for texturing additives of single crystal silicon wafers, such as using a heating tank for heating, with heat transferred from the outside to the inside, low heating efficiency, inability to ensure uniform heat inside the solution, and easy to affect the heating effect of the texturing additives.
[0004] In order to achieve the above utility model purpose, the technical solution adopted by the utility model is as follows:
[0005] A heating device for texturing additives of single crystal silicon wafers, comprising a tank body, a stirring mechanism is arranged on the tank body, a heating pipe is arranged inside the tank body, and the heating pipe is fixedly arranged in a multi-layer spiral shape inside the tank body.
[0006] The stirring mechanism includes a motor fixedly installed on the top of the tank body, a cross plate is fixedly connected to the output shaft of the motor, and a plurality of uniformly distributed vertical plates are fixedly connected to the cross plate.
[0007] Further, a pressure pump is arranged on the top of the tank body.
[0008] Further, a plurality of uniformly distributed through holes are arranged on the vertical plates.
[0009] Further, a discharge pipe is arranged at the bottom of the outer side of the tank body, and a valve is arranged on the discharge pipe.
[0010] Further, a feed inlet is arranged on the top of the tank body, and a sealing plug is arranged on the feed inlet.
[0011] Further, legs are arranged at the bottom of the tank body.
[0012] The beneficial effects of the utility model are as follows:
[0013] A heating device for a single-crystal silicon wafer texturing additive of the present utility model, through the arranged multi-layer spiral heating tubes, heats the single-crystal silicon wafer texturing additive from the inside, and has a large heating area. Cooperating with the stirring mechanism for stirring, it can uniformly heat the inside of the solution, improving the heating effect of the single-crystal silicon wafer texturing additive. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 is a three-dimensional structural schematic diagram of the present utility model;
[0015] Figure 2 is a structural schematic diagram of the stirring mechanism and the heating tubes of the present utility model;
[0016] Figure 3 is a structural schematic diagram of the stirring mechanism of the present utility model;
[0017] Figure 4 is a structural schematic diagram of the heating tubes of the present utility model.
[0018] LIST OF REFERENCE NUMERALS FOR THE DRAWINGS:
[0019] 1, tank body; 2, heating tube; 3, motor; 4, cross plate; 5, vertical plate; 6, pressure pump; 7, through hole; 8, discharge pipe; 9, valve; 10, feed inlet; 11, sealing plug; 12, support leg. DETAILED DESCRIPTION OF THE EMBODIMENTS
[0020] The following will further illustrate the specific embodiments of the present utility model with reference to the drawings. The same components are denoted by the same reference numerals.
[0021] It should be noted that the terms "front", "rear", "left", "right", "upper" and "lower" used in the following description refer to the directions in the drawings, and the terms "inner" and "outer" respectively refer to the directions towards or away from the geometric center of a specific component.
[0022] In order to make the content of the present utility model more clearly understood, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the drawings in the embodiments of the present utility model.
[0023] As Figures 1 to 4 shown, a heating device for a single-crystal silicon wafer texturing additive includes a tank body 1. Support legs 12 are provided at the bottom of the tank body 1, and a feed inlet 10 is provided at the top of the tank body 1. A sealing plug 11 is provided on the feed inlet 10. The single-crystal silicon wafer texturing additive is added into the tank body 1 from the feed inlet 10, and the sealing plug 11 is covered to seal the tank body 1.
[0024] Inside the tank body 1, there is a heating pipe 2 which is fixedly arranged in a multi-layer spiral shape inside the tank body 1. The contact area between the heating pipe 2 and the single-crystalline silicon wafer texturing additive is increased, which can improve the heating efficiency of the single-crystalline silicon wafer texturing additive.
[0025] At the top of the tank body 1, there is a pressure pump 6. The pressure inlet of the pressure pump 6 is communicated with the inside of the tank body 1. During the heating process of the single-crystalline silicon wafer texturing additive, the pressure pump 6 pressurizes the inside of the tank body 1 to increase the pressure inside the tank body 1, which is beneficial to the temperature rise of the single-crystalline silicon wafer texturing additive.
[0026] On the tank body 1, there is a stirring mechanism. The stirring mechanism includes a motor 3 fixedly installed on the top of the tank body 1. A cross plate 4 is fixedly connected to the output shaft of the motor 3. A number of uniformly distributed vertical plates 5 are fixedly connected to the cross plate 4. A number of uniformly distributed through holes 7 are provided on the vertical plates 5.
[0027] Through the arranged stirring mechanism, the motor 3 drives the cross plate 4 to rotate, the cross plate 4 drives the vertical plates 5 to rotate, and the vertical plates 5 stir the single-crystalline silicon wafer texturing additive, making the heating of the single-crystalline silicon wafer texturing additive more uniform.
[0028] At the bottom of the outer side of the tank body 1, there is a discharge pipe 8. A valve 9 is provided on the discharge pipe 8. After the heating of the single-crystalline silicon wafer texturing additive is completed, the valve 9 is opened, and the single-crystalline silicon wafer texturing additive is discharged from the discharge pipe 8.
[0029] The above are only the preferred embodiments of the utility model patent, and are not intended to limit the utility model patent. Any modifications, equivalent replacements, and improvements made within the spirit and principle of the utility model patent shall be included in the protection scope of the utility model patent.
Claims
1. A heating device for an additive for texturing monocrystalline silicon wafers, characterized in that, It includes a tank body (1), a stirring mechanism is provided on the tank body (1), a heating pipe (2) is provided inside the tank body (1), and the heating pipe (2) is fixedly arranged in a multi-layer spiral shape inside the tank body (1). The stirring mechanism includes a motor (3) fixedly installed at the top of the tank body (1), a cross plate (4) is fixedly connected to the output shaft of the motor (3), and a plurality of uniformly distributed vertical plates (5) are fixedly connected to the cross plate (4).
2. The heating device for the single-crystalline silicon wafer texturing additive according to claim 1, characterized in that: A pressure pump (6) is provided at the top of the tank body (1).
3. The heating device for the single-crystalline silicon wafer texturing additive according to claim 1, characterized in that: A plurality of uniformly distributed through holes (7) are provided on the vertical plate (5).
4. The heating device for the single-crystalline silicon wafer texturing additive according to claim 2, characterized in that: A discharge pipe (8) is provided at the bottom of the outer side surface of the tank body (1), and a valve (9) is provided on the discharge pipe (8).
5. The heating device for the single-crystal silicon wafer texturing additive according to claim 4, characterized in that: A feed inlet (10) is provided at the top of the tank body (1), and a sealing plug (11) is provided on the feed inlet (10).
6. The heating device for the single-crystalline silicon wafer texturing additive according to claim 5, wherein: Support legs (12) are provided at the bottom of the tank body (1).