Simple measuring device for monocrystalline silicon broken line interface depth
By designing a simple measurement device including a long bridge and a measuring ruler, the problem of large error in the measurement of the broken depth of a single crystal silicon rod is solved, and fast and accurate broken depth measurement is achieved, supporting the optimization of the single crystal silicon production process.
Patent Information
- Application Number
- CN202422256731.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-14
- Publication Date
- 2025-07-22
- Estimated Expiration
- 2034-09-14
AI Technical Summary
In the prior art, after the single crystal silicon crystal rod is broken, the lack of special devices leads to a large error in the measurement of the disconnection depth, which affects the accuracy of the judgment of the thermal field temperature of the single crystal silicon.
A simple measuring device including a long bridge and a measuring ruler is designed. The measuring ruler can be inserted into the measuring hole and slide in the section. The starting point of the scale is located at the wedge-shaped end. The long bridge is placed at the edge of the broken interface of the crystal rod. The measuring ruler is inserted into the section to measure the depth.
It realizes fast and accurate measurement of broken-line depth, reduces artificial operation errors, and provides reliable basic data for the optimization of single crystal silicon production process.
Smart Images
Figure CN223138510U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of single crystal silicon, and particularly relates to a simple measuring device for the depth of a single crystal silicon wire-breaking interface. Background Art
[0002] As a relatively active non-metallic element crystal, single crystal silicon is an important part of crystal materials and is at the forefront of the development of new materials. In the prior art, after a single crystal silicon ingot is wire-broken, the temperature at the time of wire-breaking can be determined from the depth of the cross-section, providing basic data for the optimization of the single crystal process. Therefore, the measurement of the cross-section depth is relatively important.
[0003] Currently, in the production of single crystal silicon, there is no dedicated device for measuring the depth of the wire-breaking of the ingot. Generally, a tape measure is used for simple depth measurement. Due to human operation, the measurement error is relatively large, which has a significant impact on the judgment of the temperature of the single crystal silicon thermal field. Summary of the Utility Model
[0004] The purpose of the utility model is to develop a simple measuring device for the depth of a single crystal silicon wire-breaking interface, which has a simple structure and low cost and can quickly and accurately measure the depth of the wire-breaking of the ingot.
[0005] The utility model is realized by the following technical solutions:
[0006] A simple measuring device for the depth of a single crystal silicon wire-breaking interface, comprising:
[0007] A long bridge;
[0008] A measuring hole provided on the long bridge;
[0009] A measuring scale that can be inserted into the measuring hole;
[0010] Wherein, the measuring scale is provided with scales, and the starting point of the scales is located at one end of the measuring scale;
[0011] The measuring device is used for measuring the cross-section of single crystal silicon. The long bridge is placed at the edge of the wire-breaking interface of the ingot, and the measuring scale is inserted into the cross-section through the measuring hole.
[0012] Optionally, the whole of the measuring scale is straight and rectangular, and the size of the measuring hole is adapted to the measuring scale.
[0013] Optionally, the length and width of the measuring hole correspond to the length and width of the cross-section of the measuring scale, and the measuring scale is inserted into the measuring hole and slides in the measuring hole in a direction perpendicular to the long bridge.
[0014] Optionally, the end of the measuring scale where the starting point of the scales is located is wedge-shaped.
[0015] Optionally, the measuring scale is made of stainless steel.
[0016] Optionally, the long bridge is straight and rectangular as a whole, and the long bridge is made of stainless steel or aluminum alloy.
[0017] Optionally, the measurement hole is opened in the middle of the long bridge. A first connection hole is opened at one end of the long bridge. A second connection hole is opened at the end of the measuring scale away from the starting point of the scale. A linking rope is provided between the first connection hole and the second connection hole.
[0018] Optionally, the first connection hole and the second connection hole are circular holes or square holes.
[0019] The beneficial effects of the present utility model are as follows:
[0020] The structure of the present utility model is simple, easy to process and manufacture, with low production and use costs, simple and convenient operation, no requirement for the operation experience of personnel. During the process of inserting the measuring scale into the cross-section, it remains perpendicular to the long bridge and the broken wire interface of the crystal bar, and the depth accuracy of the cross-section measured by the measuring scale is high, providing more reliable basic data for the optimization of the single-crystal silicon production process. Description of the Drawings
[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings required for use in the description of the embodiments or the prior art. Obviously, the following drawings are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.
[0022] Figure 1 It is a structural diagram of the present utility model;
[0023] Figure 2 It is a structural diagram of the present utility model from another perspective;
[0024] Figure 3 It is a structural diagram of the measuring scale;
[0025] Figure 4 It is a structural diagram of the long bridge.
[0026] Reference numerals: 1, long bridge; 2, measuring scale; 3, first connection hole; 4, second connection hole; 5, measurement hole. Detailed Embodiments
[0027] In the following text, only some exemplary embodiments are simply described. As those skilled in the art can recognize, the described embodiments can be modified in various different ways without departing from the spirit or scope of the present invention. Therefore, the drawings and the description are considered to be exemplary in nature rather than restrictive.
[0028] In the description of the present invention, it should be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention.
[0029] The embodiments of the present utility model will be described in detail below with reference to the drawings.
[0030] As Figures 1 to 4 shown, the present utility model discloses a simple measuring device for the depth of the single-crystal silicon wire-breaking interface, which includes a long bridge 1. The long bridge 1 is made of stainless steel or aluminum alloy. The long bridge 1 is straight and rectangular as a whole. One end of the long bridge 1 is provided with a first connection hole 3, and the first connection hole 3 is a circular hole or a square hole. A measuring hole 5 is provided in the middle of the long bridge 1.
[0031] A measuring scale 2 is arranged in the measuring hole 5. The measuring scale 2 is made of stainless steel. The measuring scale 2 is straight and rectangular as a whole. The size of the measuring hole 5 is adapted to the measuring scale 2. The length and width of the measuring hole 5 correspond to the length and width of the cross-section of the measuring scale 2. The measuring scale 2 can be inserted into the measuring hole 5 and slide in the measuring hole 5 in a direction perpendicular to the long bridge 1.
[0032] One end of the measuring scale 2 is provided with a second connection hole 4, and the second connection hole 4 is a circular hole or a square hole. The other end of the measuring scale 2 is wedge-shaped after being processed. There are scales on the measuring scale 2, and the starting point of the scales is the wedge-shaped end of the measuring scale 2.
[0033] A connecting rope (not shown in the figure) is arranged between the first connection hole 3 on the long bridge 1 and the second connection hole 4 of the measuring scale 2. The two ends of the connecting rope are respectively connected to the first connection hole 3 and the second connection hole 4. Through the connecting rope, the long bridge 1 and the measuring scale 2 are connected to avoid the loss of the long bridge 1 or the measuring scale 2 for a long time.
[0034] When measuring the depth of the single-crystal silicon wire-breaking interface, place the long bridge 1 on the edge of the wire-breaking interface of the crystal bar, insert the measuring scale 2 into the measuring hole 5, and let the wedge-shaped end of the measuring scale 2 extend downward until it touches the bottom of the section. At this time, the scale reading of the measuring scale 2 at the bottom surface of the long bridge 1 is the section depth. After the measurement is completed, take out the measuring scale 2, and the measuring device can be suspended at a position convenient for the operator to take through the connecting rope.
[0035] The utility model has a simple structure, is easy to process and manufacture, has low production and use costs, is simple and convenient to operate, has no requirements for the operation experience of personnel. During the process of inserting the measuring scale 2 into the cross-section, it remains perpendicular to the long bridge 1 and the crystal bar break interface. The depth accuracy of the cross-section measured by the measuring scale 2 is high, providing more reliable basic data for the optimization of the single-crystal silicon production process.
[0036] The above embodiments are only the preferred embodiments of the utility model, and do not limit the technical solutions of the utility model. As long as the technical solutions that can be achieved on the basis of the above embodiments without creative labor should be regarded as falling within the scope of the patent rights of the utility model.
Claims
1. A simple measuring device for the depth of the broken wire interface of single crystal silicon, characterized in that, Including: Long bridge; Measurement hole, provided on the long bridge; Measuring scale, which can be inserted into the measurement hole; Wherein, the measuring scale is provided with graduations, and the starting point of the graduations is located at one end of the measuring scale; The measuring device is used for measuring the cross-section of single crystal silicon. The long bridge is placed at the edge of the broken wire interface of the crystal bar, and the measuring scale is inserted into the cross-section through the measurement hole.
2. The simple measuring device for the depth of the broken wire interface of single crystal silicon according to claim 1, characterized in that, The measuring scale is straight and rectangular as a whole, and the size of the measurement hole is adapted to the measuring scale.
3. The simple measuring device for the depth of the single-crystal silicon wire break interface according to claim 2, wherein The length and width of the measurement hole correspond to the length and width of the cross-section of the measuring scale. The measuring scale is inserted into the measurement hole and slides in the measurement hole in a direction perpendicular to the long bridge.
4. The simple measuring device for the depth of the broken wire interface of single crystal silicon according to claim 1, characterized in that, The end of the measuring scale where the starting point of the graduations is located is wedge-shaped.
5. The simple measuring device for the depth of the broken wire interface of monocrystalline silicon according to claim 1, characterized in that The measuring scale is made of stainless steel.
6. The simple measuring device for the depth of the broken wire interface of single crystal silicon according to claim 1, characterized in that The long bridge is straight and rectangular as a whole, and the long bridge is made of stainless steel or aluminum alloy.
7. The simple measuring device for the depth of the broken wire interface of single crystal silicon according to claim 6, characterized in that, The measurement hole is opened in the middle of the long bridge. A first connection hole is opened at one end of the long bridge, and a second connection hole is opened at the end of the measuring scale far from the starting point of the graduations. A connecting rope is provided between the first connection hole and the second connection hole.
8. The simple measuring device for the depth of the broken wire interface of single crystal silicon according to claim 7, characterized in that, The first connection hole and the second connection hole are circular holes or square holes.