Packaging structure of power module

Abstract

The utility model discloses a packaging structure of a power module. The packaging structure comprises a first power unit and a second power unit, the packaging structure is provided with a lead frame with a plurality of base islands and a plurality of pins; a plurality of low-side transistors, a plurality of high-side transistors, a plurality of low-side driving chips and a plurality of high-side driving chips, which are installed on the corresponding base islands of the lead frame and are connected to form a plurality of power units; the plastic package body comprises a first side edge and a second side edge which are opposite to each other, and a third side edge and a fourth side edge which are opposite to each other, the plastic package body wraps the lead frame, the plurality of low-side transistors, the plurality of high-side transistors, the plurality of low-side driving chips and the plurality of high-side driving chips, and the plurality of pins extend to the outside along the third side edge and the fourth side edge of the plastic package body, the two power units drive the first motor and the second motor respectively. The two power units are integrated to drive the compressor and the fan respectively, and the overall size and cost are reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, and more specifically, to a packaging structure of a power module. Background Art

[0002] IPM (Intelligent Power Module) is a new type of high-power power electronic device, which has the advantages of high current density, low saturation voltage and high voltage resistance, and is currently widely used in various fields such as air conditioners, washing machines, and fans. In the existing air-conditioning motor system, it usually includes a compressor and a blower, and both need to be driven by a three-phase inverter power conversion circuit to drive the corresponding motors respectively. In order to improve the overall working efficiency, a power factor correction circuit is usually included in the air-conditioning motor system.

[0003] The traditional power module only has a set of three-phase power units. In application scenarios such as air-conditioning motor systems that require two sets of three-phase power units, multiple power modules are usually required to meet the driving requirements of the corresponding motors respectively. Using multiple power modules not only results in high costs, but also takes up more space and makes the external wiring more complex. Summary of the Utility Model

[0004] In view of the above problems, the purpose of the present utility model is to provide a packaging structure of a power module to improve the function and usability of the power module and solve the above problems.

[0005] A packaging structure of a power module provided by the present utility model includes: a first power unit and a second power unit; a first low-side drive chip, a first high-side drive chip, a second low-side drive chip, a second high-side drive chip, a plurality of first low-side transistors driven by the first low-side drive chip, a plurality of second low-side transistors driven by the second low-side drive chip, a plurality of first high-side transistors driven by the first high-side drive chip, and a plurality of second high-side transistors driven by the second high-side drive chip; a lead frame having a plurality of pins; a plastic package body that encapsulates the lead frame, the first low-side drive chip, the first high-side drive chip, the second low-side drive chip, the second high-side drive chip, the plurality of first low-side transistors, the plurality of first high-side transistors, the plurality of second low-side transistors, and the plurality of second high-side transistors; the plastic package body includes opposite first and second side edges, and opposite third and fourth side edges, the first and second side edges extend in the width direction, and the third and fourth side edges extend in the length direction; the plurality of pins extend to the outside along the third and fourth side edges of the plastic package body; the first power unit includes the first low-side drive chip, the first high-side drive chip, the plurality of first low-side transistors, and the plurality of first high-side transistors; the second power unit includes the second low-side drive chip, the second high-side drive chip, the plurality of second low-side transistors, and the plurality of second high-side transistors.

[0006] Optionally, the relative positions of the first high-side drive chip, the second high-side drive chip, the first low-side drive chip, and the second low-side drive chip are: the first high-side drive chip and the second high-side drive chip are located in the middle region of the plastic package body extending in the length direction, and the first low-side drive chip and the second low-side drive chip are respectively located in the two side regions of the plastic package body extending in the length direction.

[0007] Optionally, the first high-side drive chip and the second high-side drive chip are respectively located in the two side regions of the plastic package body extending in the length direction, and the first low-side drive chip and the second low-side drive chip are located in the middle region of the plastic package body extending in the length direction.

[0008] Optionally, a first virtual axis is parallel to the third and fourth side edges, the first virtual axis is located between the third and fourth side edges, and the first low-side drive chip, the first high-side drive chip, the second low-side drive chip, and the second high-side drive chip are located between the fourth side edge of the plastic package body and the first virtual axis; the plurality of first low-side transistors, the plurality of first high-side transistors, the plurality of second high-side transistors, and the plurality of second low-side transistors are located between the third side edge of the plastic package body and the first virtual axis.

[0009] Optionally, the distance between the first virtual axis and the fourth side is less than the distance between the first virtual axis and the third side.

[0010] Optionally, the second virtual axis is parallel to the first side and the second side, the second virtual axis is located between the first side and the second side, the first power unit is close to the first side of the plastic package, and the second power unit is close to the second side of the plastic package.

[0011] Optionally, the pins with the same function on the third side of the first power unit and the second power unit are arranged in the same order along the second virtual axis to both sides.

[0012] Optionally, the pins with the same function on the fourth side of the first power unit and the second power unit are arranged in the same order along the second virtual axis to both sides.

[0013] Optionally, the plurality of first high-side transistors and the plurality of second high-side transistors are electrically connected to the same positive DC power supply terminal.

[0014] Optionally, the first power unit leads out a first low-side ground terminal on the fourth side, and the first low-side ground terminal is close to the first side; the second power unit leads out a second low-side ground terminal on the fourth side, and the second low-side ground terminal is close to the second side.

[0015] Optionally, it further includes a plurality of base islands, and the plurality of base islands include a first base island, a second base island, a third base island, a fourth base island, a fifth base island, a sixth base island, and a seventh base island arranged side by side in sequence along the length direction; the plurality of first low-side transistors include three first low-side transistors; the plurality of second low-side transistors include three second low-side transistors, the plurality of first high-side transistors include three first high-side transistors; the plurality of second high-side transistors include three second high-side transistors; the three first low-side transistors are respectively installed on the first base island, the second base island, and the third base island, the three first high-side transistors and the three second high-side transistors are both installed on the fourth base island, and the three second low-side transistors are respectively installed on the fifth base island, the sixth base island, and the seventh base island.

[0016] Optionally, the plurality of base islands further include an eighth base island, and a first low-side drive chip, a first high-side drive chip, a second high-side drive chip, and a second low-side drive chip are sequentially installed on the eighth base island.

[0017] Optionally, the first base island to the seventh base island are the base islands on the lead frame. The fourth base island extends to the third side of the plastic package and leads out the positive terminal of the DC power supply. The first base island, the second base island, and the third base island respectively extend to the third side of the plastic package and lead out the third-phase output terminal of the first power unit, the second-phase output terminal of the first power unit, and the first-phase output terminal of the first power unit. The fifth base island, the sixth base island, and the seventh base island respectively extend to the third side of the plastic package and lead out the first-phase output terminal of the second power unit, the second-phase output terminal of the second power unit, and the third-phase output terminal of the second power unit. The three-phase output terminals of the first power unit and the three-phase output terminals of the second power unit are symmetrically arranged on both sides of the positive terminal of the DC power supply in the arrangement order.

[0018] Optionally, the first base island to the seventh base island are the base islands on the heat dissipation substrate. The fourth base island is connected to the positive terminal of the DC power supply by welding, and the positive terminal of the DC power supply is led out from the third side of the plastic package. The first base island, the second base island, and the third base island are respectively connected to the third-phase output terminal of the first power unit, the second-phase output terminal of the first power unit, and the first-phase output terminal of the first power unit by welding, and the three-phase output terminals of the first power unit are led out from the third side of the plastic package. The fifth base island, the sixth base island, and the seventh base island are respectively connected to the first-phase output terminal of the second power unit, the second-phase output terminal of the second power unit, and the third-phase output terminal of the second power unit by welding, and the three-phase output terminals of the second power unit are led out from the third side of the plastic package. The three-phase output terminals of the first power unit and the three-phase output terminals of the second power unit are symmetrically arranged on both sides of the positive terminal of the DC power supply in the arrangement order.

[0019] Optionally, the three-phase output terminals of the first power unit are located between the positive terminal of the DC power supply and the three-phase DC power supply negative terminal of the first power unit. The three-phase output terminals of the second power unit are located between the positive terminal of the DC power supply and the three-phase DC power supply negative terminal of the second power unit.

[0020] Optionally, the low-voltage pins connected to the first low-side transistor and the low-voltage pins connected to the second low-side transistor on the third side are respectively located at both ends of the third side; the low-voltage pins connected to the first low-side driver chip and the low-voltage pins connected to the second low-side driver chip on the fourth side are respectively located at both ends of the fourth side; the high-voltage pins connected to the first high-side transistor and the high-voltage pins connected to the second high-side transistor on the third side are located in the middle area of the third side; the high-voltage pins connected to the first high-side driver chip and the high-voltage pins connected to the second high-side driver chip on the fourth side are located in the middle area of the fourth side.

[0021] Optionally, the high-voltage pins arranged in sequence from the first side to the second side on the third side include: the first W-phase output terminal, the first V-phase output terminal, the first U-phase output terminal, the positive DC power supply terminal, the second U-phase output terminal, the second V-phase output terminal, and the second W-phase output terminal.

[0022] Optionally, the high-voltage pins arranged in sequence from the first side to the second side on the fourth side include: the first W-phase high-side driver floating power supply terminal, the first W-phase high-side driver floating power supply ground terminal, the first V-phase high-side driver floating power supply terminal, the first V-phase high-side driver floating power supply ground terminal, the first U-phase high-side driver floating power supply terminal, the first U-phase high-side driver floating power supply ground terminal, the second U-phase high-side driver floating power supply ground terminal, the second U-phase high-side driver floating power supply terminal, the second V-phase high-side driver floating power supply ground terminal, the second V-phase high-side driver floating power supply terminal, the second W-phase high-side driver floating power supply ground terminal, and the second W-phase high-side driver floating power supply terminal.

[0023] Optionally, the pins arranged in sequence from the first side to the second side on the third side include: the first W-phase DC power supply negative terminal, the first V-phase DC power supply negative terminal, the first U-phase DC power supply negative terminal, the first W-phase output terminal, the first V-phase output terminal, the first U-phase output terminal, the positive DC power supply terminal, the second U-phase output terminal, the second V-phase output terminal, the second W-phase output terminal, the second U-phase DC power supply negative terminal, the second V-phase DC power supply negative terminal, and the second W-phase DC power supply negative terminal.

[0024] Optionally, the pins arranged in sequence from the first side to the second side on the fourth side include: a first low-side ground terminal, a first W-phase low-side signal input terminal, a first V-phase low-side signal input terminal, a first U-phase low-side signal input terminal, a first low-side power supply terminal, a first W-phase high-side signal input terminal, a first V-phase high-side signal input terminal, a first U-phase high-side signal input terminal, a first W-phase high-side drive floating power supply terminal, a first W-phase high-side drive floating power supply ground terminal, a first V-phase high-side drive floating power supply terminal, a first V-phase high-side drive floating power supply ground terminal, a first U-phase high-side drive floating power supply terminal, a first U-phase high-side drive floating power supply ground terminal, a second U-phase high-side drive floating power supply ground terminal, a second U-phase high-side drive floating power supply terminal, a second V-phase high-side drive floating power supply ground terminal, a second V-phase high-side drive floating power supply terminal, a second W-phase high-side drive floating power supply ground terminal, a second W-phase high-side drive floating power supply terminal, a second U-phase high-side signal input terminal, a second V-phase high-side signal input terminal, a second W-phase high-side signal input terminal, a second low-side power supply terminal, a second U-phase low-side signal input terminal, a second V-phase low-side signal input terminal, a second W-phase low-side signal input terminal, and a second low-side ground terminal.

[0025] Optionally, the several first high-side transistors are electrically connected to a first DC power supply positive terminal, the several second high-side transistors are electrically connected to a second DC power supply positive terminal, and the first DC power supply positive terminal and the second DC power supply positive terminal are respectively located at two ends of the third side.

[0026] Optionally, the first power unit and the second power unit share the same common ground terminal on the fourth side.

[0027] Optionally, it further includes multiple base islands, and the multiple base islands include a first base island, a second base island, a third base island, a fourth base island, a fifth base island, a sixth base island, a seventh base island, and an eighth base island arranged in parallel in sequence along the length direction; the several first low-side transistors include three first low-side transistors, the several second low-side transistors include three second low-side transistors, the several first high-side transistors include three first high-side transistors, and the several second high-side transistors include three second high-side transistors; the three first high-side transistors are all mounted on the first base island, and the three first low-side transistors are respectively mounted on the second base island, the third base island, and the fourth base island; the three second low-side transistors are respectively mounted on the fifth base island, the sixth base island, and the seventh base island, and the three second high-side transistors are all mounted on the eighth base island.

[0028] Optionally, the multiple base islands further include a ninth base island, and a first high-side drive chip, a first low-side drive chip, a second low-side drive chip, and a second high-side drive chip are sequentially mounted on the ninth base island.

[0029] Optionally, the first base island to the eighth base island are base islands on the lead frame. The first base island extends to the third side of the plastic package and leads out the positive terminal of the first DC power supply; the eighth base island extends to the third side of the plastic package and leads out the positive terminal of the second DC power supply; the second base island, the third base island, and the fourth base island respectively extend to the third side of the plastic package and lead out the first-phase output terminal, the second-phase output terminal, and the third-phase output terminal of the first power unit; the fifth base island, the sixth base island, and the seventh base island respectively extend to the third side of the plastic package and lead out the first-phase output terminal, the second-phase output terminal, and the third-phase output terminal of the second power unit; the positive terminal of the first DC power supply and the positive terminal of the second DC power supply are respectively located at both ends of the third side; the three-phase output terminals of the first power unit are arranged close to the positive terminal of the first DC power supply, and the three-phase output terminals of the second power unit are arranged close to the positive terminal of the second DC power supply.

[0030] Optionally, the first base island to the eighth base island are base islands on the heat dissipation substrate. The first base island is connected to the positive terminal of the first DC power supply by welding, and the positive terminal of the first DC power supply is led out from the third side of the plastic package; the eighth base island is connected to the second DC power supply terminal by welding, and the positive terminal of the second DC power supply is led out from the third side of the plastic package; the second base island, the third base island, and the fourth base island are respectively connected to the first-phase output terminal, the second-phase output terminal, and the third-phase output terminal of the first power unit by welding, and the three-phase output terminals of the first power unit are led out from the third side of the plastic package; the fifth base island, the sixth base island, and the seventh base island are respectively connected to the third-phase output terminal, the second-phase output terminal, and the first-phase output terminal of the second power unit by welding, and the three-phase output terminals of the second power unit are led out from the third side of the plastic package; the positive terminal of the first DC power supply and the positive terminal of the second DC power supply are respectively located at both ends of the third side; the three-phase output terminals of the first power unit are arranged close to the positive terminal of the first DC power supply, and the three-phase output terminals of the second power unit are arranged close to the positive terminal of the second DC power supply.

[0031] Optionally, the three-phase output terminals of the first power unit are located between the positive terminal of the first DC power supply and the negative terminal of the three-phase DC power supply of the first power unit; the three-phase output terminals of the second power unit are located between the positive terminal of the second DC power supply and the negative terminal of the three-phase DC power supply of the second power unit.

[0032] Optionally, the low-voltage pins connected to the first low-side transistor on the third side and the low-voltage pins connected to the second low-side transistor on the third side are located in the middle area of the third side; the low-voltage pins connected to the first low-side driver chip on the fourth side and the low-voltage pins connected to the second low-side driver chip on the fourth side are located in the middle area of the fourth side; the high-voltage pins connected to the first high-side transistor on the third side and the high-voltage pins connected to the second high-side transistor on the third side are respectively located at both ends of the third side; the high-voltage pins connected to the first high-side driver chip on the fourth side and the high-voltage pins connected to the second high-side driver chip on the fourth side are respectively located at both ends of the fourth side.

[0033] Optionally, the high-voltage pins arranged in sequence from the first side to the second side on the third side include: the first DC power supply positive terminal, the first U-phase output terminal, the first V-phase output terminal, the first W-phase output terminal, the second W-phase output terminal, the second V-phase output terminal, the second U-phase output terminal, and the second DC power supply positive terminal.

[0034] 30. For the above-mentioned power module packaging structure, the high-voltage pins arranged in sequence from the first side to the second side on the fourth side include: the first U-phase high-side drive floating power supply ground terminal, the first U-phase high-side drive floating power supply terminal, the first V-phase high-side drive floating power supply ground terminal, the first V-phase high-side drive floating power supply terminal, the first W-phase high-side drive floating power supply ground terminal, the first W-phase high-side drive floating power supply terminal, the second W-phase high-side drive floating power supply terminal, the second W-phase high-side drive floating power supply ground terminal, the second V-phase high-side drive floating power supply terminal, the second V-phase high-side drive floating power supply ground terminal, the second U-phase high-side drive floating power supply terminal, and the second U-phase high-side drive floating power supply ground terminal.

[0035] Optionally, the pins arranged in sequence from the first side to the second side on the third side include: the first DC power supply positive terminal, the first U-phase output terminal, the first V-phase output terminal, the first W-phase output terminal, the first U-phase DC power supply negative terminal, the first V-phase DC power supply negative terminal, the first W-phase DC power supply negative terminal, the second W-phase DC power supply negative terminal, the second V-phase DC power supply negative terminal, the second U-phase DC power supply negative terminal, the second W-phase output terminal, the second V-phase output terminal, the second U-phase output terminal, and the second DC power supply negative terminal.

[0036] Optionally, the pins arranged in sequence from the first side to the second side on the fourth side include: the first U-phase high-side drive floating power supply ground terminal, the first U-phase high-side drive floating power supply terminal, the first V-phase high-side drive floating power supply ground terminal, the first V-phase high-side drive floating power supply terminal, the first W-phase high-side drive floating power supply ground terminal, the first W-phase high-side drive floating power supply terminal, the first U-phase high-side signal input terminal, the first V-phase high-side signal input terminal, the first W-phase high-side signal input terminal, the first low-side power supply terminal, the first U-phase low-side signal input terminal, the first V-phase low-side signal input terminal, the first W-phase low-side signal input terminal, the common ground terminal, the second W-phase low-side signal input terminal, the second V-phase low-side signal input terminal, the second U-phase low-side signal input terminal, the second low-side power supply terminal, the second W-phase high-side signal input terminal, the second V-phase high-side signal input terminal, the second U-phase high-side signal input terminal, the second W-phase high-side drive floating power supply terminal, the second W-phase high-side drive floating power supply ground terminal, the second V-phase high-side drive floating power supply terminal, the second V-phase high-side drive floating power supply ground terminal, the second U-phase high-side drive floating power supply terminal, and the second U-phase high-side drive floating power supply ground terminal.

[0037] Optionally, the ninth base island extends towards the fourth side and leads out a common ground terminal, and the common ground terminal is located at the middle position of the fourth side.

[0038] Optionally, the ninth base island extends towards the fourth side and leads out a common ground terminal, and the common ground terminal is located at both ends of the fourth side.

[0039] Optionally, the negative DC power supply terminals of each phase of the first power unit are respectively led out as pins from the plastic package, or the negative DC power supply terminals of each phase of the first power unit are combined into one negative DC power supply terminal and led out as a pin from the plastic package.

[0040] Optionally, the negative DC power supply terminals of each phase of the second power unit are respectively led out as pins from the plastic package, or the negative DC power supply terminals of each phase of the second power unit are combined into one negative DC power supply terminal and led out as a pin from the plastic package.

[0041] Optionally, the first power unit and the second power unit share a fault alarm signal output terminal, an overcurrent detection input terminal, and a temperature signal output terminal; the fault alarm signal output terminal, the overcurrent detection input terminal, and the temperature signal output terminal are led out by the low-side drive chip of the power unit with a larger output power among the first power unit and the second power unit, so as to realize the functions of fault alarm, overcurrent detection, and temperature detection of the entire power module.

[0042] Optionally, the power supply terminal of the first high-side drive chip and the power supply terminal of the first low-side drive chip are shared, and the power supply terminal of the second high-side drive chip and the power supply terminal of the second low-side drive chip are shared.

[0043] Optionally, a plurality of bootstrap diodes are integrated inside the high-side drive chip.

[0044] Optionally, two through holes are provided on the plastic package body, and the through holes are used for screwing and locking to install a radiator.

[0045] Optionally, a power factor correction unit is further included, and the power factor correction unit includes a PFC transistor, a PFC diode, and a PFC drive chip.

[0046] Optionally, the PFC transistor is located near the first high-side transistor and the second high-side transistor, the PFC drive chip, the first low-side drive chip, the first high-side drive chip, the second low-side drive chip, and the second high-side drive chip are located on the same base island, and the PFC diode and the first high-side transistor and the second high-side transistor are located on the same base island.

[0047] Optionally, a power factor correction unit is further included, and the power factor correction unit includes a PFC transistor, a PFC diode, and a PFC drive chip.

[0048] Optionally, the PFC drive chip, the first low-side drive chip, the first high-side drive chip, the second low-side drive chip, and the second high-side drive chip are located on the same base island, the PFC transistor is located near the high-side transistor of the power unit with a larger output power among the first power unit and the second power unit, and the PFC diode and the first type of high-side transistor are located on the same base island.

[0049] Optionally, the first high-side transistor, the second high-side transistor, the first low-side transistor, the second low-side transistor, and the PFC transistor are any one of Si MOS devices, SiC MOS devices, GaN MOS devices, RC-IGBT devices, IGBT devices, and IGBT devices encapsulated with fast-recovery diodes.

[0050] Optionally, the power module is in a through-hole package or a surface-mount package.

[0051] Optionally, the first power unit drives the motor of the compressor, and the second power unit drives the motor of the blower.

[0052] Optionally, the output power of the first power unit is greater than the output power of the second power unit.

[0053] According to the packaging structure of the power module provided by the present utility model, the first power unit and the second power unit are integrated in the same power module, and some pins in the two power units can be connected inside the plastic package to realize the sharing of some external pins. This design can reduce the overall volume of the module, reduce the number of its pins and the occupied space, and also reduce the cost.

[0054] Furthermore, the two power units can be respectively used to drive the compressor and the fan, which can effectively reduce the number of power modules required for the entire system, reduce the number and complexity of external wiring, and improve the ease of use.

[0055] Furthermore, the bootstrap diode is integrated into the high-side drive chip, further reducing the overall volume; a heat dissipation substrate is added, and the high-side transistor and the low-side transistor are arranged on the heat dissipation substrate, further enhancing the heat dissipation performance of the power module. The power factor correction unit can also be integrated in the power module to improve the integration degree of the power module and reduce the overall volume and cost.

[0056] In the power module of the present application, the high-side drive chip is located in the middle area near the fourth side of the plastic package or on both sides of the plastic package extending along the length direction. This pin setting method of the power module is beneficial to increasing the effective area for installing power devices, thereby increasing the size of the power devices and ensuring the over-current capacity of the power devices under the all-plastic packaging process without using the insulated substrate process; it is also beneficial to reducing the width of the power module, thereby reducing the overall size of the power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] Through the following description of the embodiments of the present utility model with reference to the drawings, the above and other objects, features and advantages of the present utility model will be more clearly understood. In the drawings:

[0058] Figure 1 The schematic circuit diagram of the power module showing the first embodiment of the present utility model;

[0059] Figure 2 The schematic packaging diagram of the power module showing the first embodiment of the present utility model;

[0060] Figure 3 The schematic packaging diagram of the power module showing the second embodiment of the present utility model;

[0061] Figure 4 The schematic packaging diagram of the power module showing the third embodiment of the present utility model;

[0062] Figure 5 The schematic packaging diagram of the power module showing the fourth embodiment of the present utility model;

[0063] Figure 6Schematic diagram of the circuit structure of the power module showing the fifth embodiment of the present invention;

[0064] Figure 7 Schematic diagram of the package of the power module showing the fifth embodiment of the present invention;

[0065] Figure 8 Schematic diagram of the package of the power module showing the sixth embodiment of the present invention;

[0066] Figure 9 Schematic diagram of the package of the power module showing the seventh embodiment of the present invention;

[0067] Figure 10 Schematic diagram of the package of the power module showing the eighth embodiment of the present invention;

[0068] Figure 11 Schematic diagram of the circuit structure of the power module showing the ninth embodiment of the present invention;

[0069] Figure 12 Schematic diagram of the package of the power module showing the ninth embodiment of the present invention;

[0070] Figure 13 Schematic diagram of the package of the power module showing the tenth embodiment of the present invention;

[0071] Figure 14 Schematic diagram of the circuit structure of the power module showing the eleventh embodiment of the present invention;

[0072] Figure 15 Schematic diagram of the package of the power module showing the eleventh embodiment of the present invention. Detailed implementation manners

[0073] The present invention will be described in more detail below with reference to the accompanying drawings. For clarity, the various parts in the drawings are not drawn to scale. In addition, some well-known parts may not be shown. Many specific details of the present invention are described below, but as those skilled in the art can understand, the present invention can be implemented without these specific details.

[0074] The present invention can be presented in various forms, and some examples will be described below.

[0075] To clearly show the various parts in the power module, some parts are drawn in non-black. Specifically, some bonding wires are drawn in red, the outline of the plastic package is drawn in blue, and the heat dissipation substrate is drawn in yellow.

[0076] Figure 1 Schematic diagram of the circuit structure of the power module showing the first embodiment of the present invention. Figure 2The figure shows a schematic diagram of the package of the power module according to the first embodiment of the present invention.

[0077] As Figure 1 shown, the power module 100 includes, for example, a first power unit and a second power unit to drive the motors of the air compressor and the fan respectively. Specifically, the first power unit is composed of, for example, a first high-side drive chip A1, first high-side transistors Q11-Q13, a first low-side drive chip A3, and first low-side transistors Q31-Q33. The second power unit is composed of, for example, a second high-side drive chip A2, second high-side transistors Q21-Q23, a second low-side drive chip A4, and second low-side transistors Q41-Q43. The components constituting the first power unit are, for example, located on the left side of the plastic package, and the components constituting the second power unit are, for example, located on the right side of the plastic package. The first high-side drive chip A1 and the second high-side drive chip A2 are, for example, both located in the middle area of the plastic package.

[0078] Further, the U-phase half-bridge circuit of the first power unit includes the first high-side transistor Q13 and the first low-side transistor Q33. The V-phase half-bridge circuit includes the first high-side transistor Q12 and the first low-side transistor Q32. The W-phase half-bridge circuit includes the first high-side transistor Q11 and the first low-side transistor Q31. The U-phase low-side signal output terminal Loutu of the first low-side drive chip A3 is connected to the control terminal of the first low-side transistor Q33. The V-phase low-side signal output terminal Loutv of the first low-side drive chip A3 is connected to the control terminal of the first low-side transistor Q32. The W-phase low-side signal output terminal Loutw of the first low-side drive chip A3 is connected to the control terminal of the first low-side transistor Q31. The U-phase high-side signal output terminal Houtu of the first high-side drive chip A1 is connected to the control terminal of the first high-side transistor Q13. The V-phase high-side signal output terminal Houtv of the first high-side drive chip A1 is connected to the control terminal of the first high-side transistor Q12. The W-phase high-side signal output terminal Houtw of the first high-side drive chip A1 is connected to the control terminal of the first high-side transistor Q11.

[0079] The U-phase half-bridge circuit of the second power unit includes a second high-side transistor Q21 and a second low-side transistor Q41. The V-phase half-bridge circuit includes a second high-side transistor Q22 and a second low-side transistor Q42. The W-phase half-bridge circuit includes a second high-side transistor Q23 and a second low-side transistor Q43. The U-phase low-side signal output terminal Loutu of the second low-side driver chip A4 is connected to the control terminal of the second low-side transistor Q41. The V-phase low-side signal output terminal Loutv of the second low-side driver chip A4 is connected to the control terminal of the second low-side transistor Q42. The W-phase low-side signal output terminal Loutw of the second low-side driver chip A4 is connected to the control terminal of the second low-side transistor Q43. The U-phase high-side signal output terminal Houtu of the second high-side driver chip A2 is connected to the control terminal of the second high-side transistor Q21. The V-phase high-side signal output terminal Houtv of the second high-side driver chip A2 is connected to the control terminal of the second high-side transistor Q22. The W-phase high-side signal output terminal Houtw of the second high-side driver chip A2 is connected to the control terminal of the second high-side transistor Q23.

[0080] Exemplarily, the power module 100 further includes: a bootstrap diode D1 connected between the W-phase high-side driving floating power supply terminal Vbw of the first high-side driver chip A1 and the high-side power supply terminal Vcch, a bootstrap diode D2 connected between the V-phase high-side driving floating power supply terminal Vbv of the first high-side driver chip A1 and the high-side power supply terminal Vcch, and a bootstrap diode D3 connected between the U-phase high-side driving floating power supply terminal Vbu of the first high-side driver chip A1 and the high-side power supply terminal Vcch. Similarly, bootstrap diodes D4-D6 are also integrated in the second high-side driver chip A2, which will not be elaborated here.

[0081] The high-side transistor and the low-side transistor in this embodiment are one of MOS (metal-oxide-semiconductor field effect transistor) devices, RC-IGBT (reverse conducting insulated gate bipolar transistor) devices, IGBT (insulated gate bipolar transistor) devices, and IGBT devices with a fast recovery diode encapsulated together.

[0082] When the transistor is a MOS device, the first end of the transistor is the drain, the second end is the source, and the control end is the gate; when the transistor is an IGBT device, the first end of the transistor is the collector, the second end is the emitter, and the control end is the base.

[0083] Figure 1 The power module 100 in [description] includes multiple pins, and the pin names and descriptions are shown in the following table.

[0084] Table 1. Pin Names and Descriptions of the Power Module

[0085]

[0086]

[0087] Among them, the first end of the first high-side transistor Q11 is connected to the first end of the first high-side transistor Q12, the first end of the first high-side transistor Q13, the first end of the second high-side transistor Q21, the first end of the second high-side transistor Q22, and the first end of the second high-side transistor Q23, and is connected to the positive direct-current power supply terminal P of the power module 100.

[0088] Taking the first power unit as an example, the intermediate node between the second end of the first high-side transistor Q13 and the first end of the first low-side transistor Q33 is connected to the floating power supply ground terminal Vsu of the U-phase high-side drive of the high-side drive chip A1 and serves as the first U-phase output terminal U1 of the power module 100. The intermediate node between the second end of the first high-side transistor Q12 and the first end of the first low-side transistor Q32 is connected to the floating power supply ground terminal Vsv of the V-phase high-side drive of the high-side drive chip A1 and serves as the first V-phase output terminal V1 of the power module 100. The intermediate node between the second end of the first high-side transistor Q11 and the first end of the first low-side transistor Q31 is connected to the floating power supply ground terminal Vsw of the W-phase high-side drive of the high-side drive chip A1 and serves as the first W-phase output terminal W1 of the power module 100. The second end of the first low-side transistor Q33 is connected to the first U-phase DC power supply negative terminal NU1 of the power module 100. The second end of the first low-side transistor Q32 is connected to the first V-phase DC power supply negative terminal NV1 of the power module 100. The second end of the first low-side transistor Q31 is connected to the first W-phase DC power supply negative terminal NW1 of the power module 100. The temperature signal output terminal Vot of the first low-side drive chip A3 is connected to the temperature signal output terminal VOT of the power module 100. The common ground terminal Com of the first low-side drive chip A3 is connected to the first low-side ground terminal COM1 of the power module 100. The overcurrent detection input terminal Csc of the first low-side drive chip A3 is connected to the overcurrent detection input terminal CSC of the power module 100. The fault alarm signal output terminal Vfo of the first low-side drive chip A3 is connected to the fault alarm signal output terminal VFO of the power module 100. The low-side power supply terminal Vccl of the first low-side drive chip A3 is connected to the first low-side power supply terminal VCCL1 of the power module 100. The W-phase low-side signal input terminal inwl of the first low-side drive chip A3 is connected to the first W-phase low-side signal input terminal INWL1 of the power module 100. The V-phase low-side signal input terminal invl of the low-side drive chip A3 is connected to the first V-phase low-side signal input terminal INVL1 of the power module 100. The U-phase low-side signal input terminal inul of the first low-side drive chip A3 is connected to the first U-phase low-side signal input terminal INUL1 of the power module 100. The common ground terminal Com of the first high-side drive chip A1 is connected to the common ground terminal Com of the first low-side drive chip A3 inside the plastic package and is connected to the first common ground terminal COM1 of the power module 100. The high-side power supply terminal Vcch of the first high-side drive chip A1 is connected to the low-side power supply terminal Vccl of the first low-side drive chip A3 inside the plastic package and is connected to the first low-side power supply terminal VCCL1 of the power module 100. The W-phase high-side signal input terminal inwh of the first high-side drive chip A1 is connected to the first W-phase high-side signal input terminal INWH1 of the power module 100. The V-phase high-side signal input terminal invh of the first high-side drive chip A1 is connected to the first V-phase high-side signal input terminal INVH1 of the power module 100.The U-phase high-side signal input terminal inuh of the first high-side drive chip A1 is connected to the first U-phase high-side signal input terminal INUH1 of the power module 100. The W-phase high-side drive floating power supply terminal Vbw of the first high-side drive chip A1 is connected to the first W-phase high-side drive floating power supply terminal VBW1 of the power module 100. The W-phase high-side drive floating power supply ground terminal Vsw of the first high-side drive chip A1 is connected to the first W-phase high-side drive floating power supply ground terminal VSW1 of the power module 100. The V-phase high-side drive floating power supply terminal Vbv of the first high-side drive chip A1 is connected to the first V-phase high-side drive floating power supply terminal VBV1 of the power module 100. The V-phase high-side drive floating power supply ground terminal Vsv of the first high-side drive chip A1 is connected to the first V-phase high-side drive floating power supply ground terminal VSV1 of the power module 100. The U-phase high-side drive floating power supply terminal Vbu of the first high-side drive chip A1 is connected to the first U-phase high-side drive floating power supply terminal VBU1 of the power module 100. The U-phase high-side drive floating power supply ground terminal Vsu of the first high-side drive chip A1 is connected to the first U-phase high-side drive floating power supply ground terminal VSU1 of the power module 100.

[0089] The first power unit and the second power unit share a fault alarm signal output terminal, an overcurrent detection input terminal, and a temperature signal output terminal. The second low-side drive chip in the second power unit does not include a temperature signal output terminal Vot, an overcurrent detection input terminal Csc, and a fault alarm signal output terminal Vfo. The power consumption of the first power unit is, for example, greater than that of the second power unit. Specifically, the first power unit is, for example, used to drive a compressor, and the second power unit is, for example, used to drive a fan. The second power unit includes a second high-side drive chip A2, second high-side transistors Q21-Q23, a second low-side drive chip A4, and second low-side transistors Q41-Q44. Each part in the second power unit is similar to that in the first power unit and will not be elaborated here.

[0090] Combined Figure 2 As shown, the power module 100 includes a lead frame and a plastic package 110. Figure 2Also shown therein are a first virtual axis and a second virtual axis. The dashed line is the first virtual axis, which is parallel to the third side and the fourth side. The distance between the first virtual axis and the fourth side is less than the distance between the first virtual axis and the third side. The dotted line is the second virtual axis, which is parallel to the first side and the second side. The second virtual axis is, for example, the central axis of the plastic package 110 in the direction parallel to the first side. The lead frame includes a plurality of base islands, a plurality of pins, and a conductive structure connecting the base islands and the pins. The plastic package 110 encapsulates the base islands and the conductive structure in the lead frame and exposes at least part of the plurality of pins to the outside for connection to an external circuit. Among them, the plastic package 110 includes opposite first side 111, second side 112, and opposite third side 113, fourth side 114. The third side 113 and the fourth side 114 extend along the length direction. Both the first side 111 and the second side 112 are perpendicular to the third side 113 and extend along the width direction. Exemplarily, the distance between the first side 111 and the second side 112 of the plastic package 110 is the width of the plastic package (the product width of the power module 100). The plurality of pins of the power module 100 extend from the third side and the fourth side of the plastic package 110. The semi-circular holes on the first side and the second side of the plastic package 110 are respectively used to install the left and right screws to fix the power module 100 on the radiator.

[0091] The high-voltage pins of the power module include: P, U1, U2, V1, V2, W1, W2, VBU1, VBU2, VSU1, VSU2, VBV1, VBV2, VSV1, VSV2, VBW1, VBW2, VSW1, VSW2, and the rest are low-voltage pins. Among them, the third side 113 is, for example, all power pins, and the fourth side 114 is, for example, all signal pins. The fault alarm signal output terminal VFO, the overcurrent detection input terminal CSC, and the temperature signal output terminal VOT are led out by the low-side drive chip of the power unit with a larger output power among the first power unit and the second power unit. Specifically, in Figure 2 the illustrated embodiment, the first power unit is, for example, used to drive the motor of the compressor, and the second power unit is, for example, used to drive the motor of the fan. The power of the motor of the compressor is greater than that of the motor of the fan. The fault alarm signal output terminal VFO, the overcurrent detection input terminal CSC, and the temperature signal output terminal VOT are led out by the first low-side drive chip A3.

[0092] The pin pitch referred to in this article is the minimum distance between the edges of two pins. The pitch between adjacent high-voltage pins is greater than the pitch between adjacent low-voltage pins, and the pitch between adjacent high-voltage pins and low-voltage pins is greater than the pitch between adjacent low-voltage pins.

[0093] The components in the first power unit, for example, are located on one side of the plastic package 110 close to the first side 111, and the components in the second power unit, for example, are located on the other side of the plastic package 110 close to the second side 112. The first high-side transistors Q11 - Q13 and the second high-side transistors Q21 - Q23 are located in the middle region of the plastic package 110. Specifically, the multiple base islands include base islands 1 - 8. Among them, base islands 1 - 7 are located in the first region between the first virtual axis and the third side, and base island 8 is located in the second region between the first virtual axis and the fourth side. The first low-side transistors Q31 - Q33 are respectively located on base islands 1 - 3, the first high-side transistors Q11 - Q13 and the second high-side transistors Q21 - Q23 are arranged along the length direction of the plastic package 110 and are located on the same base island 4, the second low-side transistors Q41 - Q43 are respectively located on base islands 5 - 7, and the first low-side drive chip A3, the first high-side drive chip A1, the second high-side drive chip A2, and the second low-side drive chip A4 are arranged in sequence along the length direction of the plastic package 110 and are located on the same base island 8; base islands 1 - 7 are close to the third side 113 of the plastic package 110, and base island 8 is located between base islands 1 - 7 and the fourth side 114 of the plastic package 110. Further, the low-side drive chips correspond to the low-side transistors, and the high-side drive chips correspond to the high-side transistors.

[0094] The base island 4 extends the positive DC power supply terminal P towards the third side 113. Base islands 1 - 3 respectively extend the first W-phase output terminal W1, the first V-phase output terminal V1, and the first U-phase output terminal U1 towards the third side 113. Base islands 5 - 7 respectively extend the second U-phase output terminal U2, the second V-phase output terminal V2, and the second W-phase output terminal W2 towards the third side 113. Base island 8 extends the first low-side ground terminal COM1 and the second low-side ground terminal COM2 towards the fourth side 114.

[0095] Some pins on the third side 113 are symmetrically arranged on both sides of the second virtual axis, and some pins on the fourth side 114 are also symmetrically arranged on both sides of the second virtual axis. It can also be said that the pins with the same function on the third side of the first power unit and the second power unit are arranged in the same order towards both sides along the second virtual axis.

[0096] The pins with the same function on the fourth side of the first power unit and the second power unit are arranged in the same order towards both sides along the second virtual axis.

[0097] Figure 3A schematic diagram of the package of the power module according to the second embodiment of the present invention is shown; the power module 100 in the second embodiment further includes a heat dissipation substrate 115 to increase the heat conduction ability of the product, so that the power module meets a larger current specification. The heat dissipation substrate 115 is, for example, a DBC ceramic substrate, and the base islands 1-7 are, for example, all located on the heat dissipation substrate 115. Correspondingly, the first low-side transistors Q31-Q33, the first high-side transistors Q11-Q13, the second high-side transistors Q21-Q23, and the second low-side transistors Q41-Q43 are also all located on the heat dissipation substrate 115. The heat dissipation substrate 115 can be fixed to the lead frame by welding, for example.

[0098] Figure 4 A schematic diagram of the package of the power module according to the third embodiment of the present invention is shown; the third embodiment is similar to the first embodiment. The power module in the third embodiment is equivalent to swapping the positions of the first power unit part and the second power unit part in the first embodiment. Each part in the second power unit is close to the first side 111, and each part in the first power unit is close to the second side 112. Similarly, the second high-side drive chip A2 and the first high-side drive chip A1 are located in the middle area of the plastic package 110. The same parts will not be described again.

[0099] Figure 5 A schematic diagram of the package of the power module according to the fourth embodiment of the present invention is shown; the fourth embodiment is similar to the second embodiment. The power module in the fourth embodiment is equivalent to swapping the positions of the first power unit part and the second power unit part in the second embodiment. The same parts will not be described again.

[0100] Figure 6 A schematic diagram of the circuit structure of the power module according to the fifth embodiment of the present invention is shown; Figure 7 A schematic diagram of the package of the power module according to the fifth embodiment of the present invention is shown.

[0101] The circuit structure of the power module of the fifth embodiment is similar to that of the first embodiment, and the same parts will not be described again. The difference lies in that the low-side transistor and the low-side driver chip are located in the middle area of the plastic package, and the high-side transistor and the high-side driver chip are respectively located on both sides of the plastic package. The Com terminals of the first high-side driver chip A1, the Com terminal of the first low-side driver chip A3, the Com terminal of the second high-side driver chip A2, and the Com terminal of the second low-side driver chip A4 are connected inside the plastic package 110 and led out through the same pin, the low-side ground terminal COM; the first high-side transistors Q11-Q13 and the second high-side transistors Q21-Q23 are respectively located on two base islands. Correspondingly, the original positive DC power supply terminal P is divided into a first positive DC power supply terminal P1 and a second positive DC power supply terminal P2. Among them, the first end of the first high-side transistor Q11 is connected to the first end of the first high-side transistor Q12, the first end of the first high-side transistor Q13 and is connected to the first positive DC power supply terminal P1 of the power module 100; the first end of the second high-side transistor Q21 is connected to the first end of the second high-side transistor Q22, the first end of the second high-side transistor Q23 and is connected to the second positive DC power supply terminal P2 of the power module 100.

[0102] Combined with Figure 7 As shown, each part in the first power unit is located, for example, on one side of the plastic package 110 close to the first side 111, and each part in the second power unit is located, for example, on the other side of the plastic package 110 close to the second side 112. The first high-side transistors Q11-Q13 are located in the area of the plastic package 110 close to the first side 111, and the second high-side transistors Q21-Q23 are located in the area of the plastic package 110 close to the second side 112. Specifically, the multiple base islands include base islands 1-9. The first high-side transistors Q11-Q13 are arranged in sequence along the length direction of the plastic package 110 and are located on the same base island 1. The first low-side transistors Q31-Q33 are respectively located on base islands 2-4. The second low-side transistors Q41-Q43 are respectively located on base islands 5-7. The second high-side transistors Q21-Q23 are arranged in sequence along the length direction of the plastic package 110 and are located on the same base island 8. The first high-side driver chip A1, the first low-side driver chip A3, the second low-side driver chip A4, and the second high-side driver chip A2 are arranged in sequence along the length direction of the plastic package 110 and are located on the same base island 9; the base islands 1-8 are close to the third side 113 of the plastic package 110, and the base island 9 is located between the base islands 1-8 and the fourth side 114 of the plastic package 110. Further, the low-side driver chip corresponds to the low-side transistor, and the high-side driver chip corresponds to the high-side transistor.

[0103] The base islands 1 and 8 respectively extend the first DC power supply positive terminal P1 and the second DC power supply positive terminal P2 to the third side 113. The base islands 2-4 respectively extend the first U-phase output terminal U1, the first V-phase output terminal V1, and the first W-phase output terminal W1 to the third side 113. The base islands 5-7 respectively extend the second W-phase output terminal W2, the second V-phase output terminal V2, and the second U-phase output terminal U2 to the third side 113. The base island 9 extends the low-side ground terminal COM to the fourth side 114.

[0104] Some of the remaining pins on the fourth side 114 are symmetrically arranged on both sides of the low-side ground terminal COM. Specifically, the pins with the same functions on the fourth side 114 except for the fault alarm signal output terminal, the overcurrent detection input terminal, and the temperature signal output terminal are arranged in the same order along both sides of the low-side ground terminal COM.

[0105] The pins with the same functions on the third side of the first power unit and the second power unit are arranged in the same order along both sides of the second virtual axis. Figure 8 The encapsulation schematic diagram of the power module showing the sixth embodiment of the present invention is shown; the power module 100 in this sixth embodiment further includes a heat dissipation substrate 115 compared with the fifth embodiment to increase the heat conduction ability of the product and enable the power module to meet a larger current specification. The heat dissipation substrate 115 is, for example, a ceramic substrate. The base islands 1-8 are, for example, all located on the heat dissipation substrate 115. Correspondingly, the first low-side transistors Q31-Q33, the first high-side transistors Q11-Q13, the second high-side transistors Q21-Q23, and the second low-side transistors Q41-Q43 are also all on the heat dissipation substrate 115. The heat dissipation substrate 115 can be fixed to the lead frame by welding, for example. The rest are all similar to the fifth embodiment and will not be described in detail.

[0106] Figure 9 The encapsulation schematic diagram of the power module showing the seventh embodiment of the present invention is shown; this seventh embodiment is similar to the fifth embodiment. The power module in this seventh embodiment is equivalent to swapping the positions of the first power unit part and the second power unit part in the fifth embodiment. Each part in the second power unit is close to the first side 111, and each part in the first power unit is close to the second side 112. The same parts will not be described in detail.

[0107] Figure 10 The encapsulation schematic diagram of the power module showing the eighth embodiment of the present invention is shown; this eighth embodiment is similar to the sixth embodiment. The power module in this eighth embodiment is equivalent to swapping the positions of the first power unit part and the second power unit part in the sixth embodiment. The same parts will not be described in detail.

[0108] Figure 11 The circuit structure schematic diagram of the power module showing the ninth embodiment of the present invention is shown;Figure 12 The encapsulation schematic diagram of the power module according to the ninth embodiment of the present utility model is shown.

[0109] The circuit structure of the power module of the ninth embodiment is similar to that of the first embodiment, and the same parts will not be described again. The difference is that the power module of the ninth embodiment adds a power factor correction unit on the basis of the first embodiment. The power factor correction unit includes a PFC transistor Q51, a PFC driver chip A5, and a PFC diode D51.

[0110] Specifically, the Vccl terminal of the PFC driver chip A5 is led out from the plastic package as the third low-side power supply terminal VCCL3; the inpfc terminal of the PFC driver chip A5 is led out from the plastic package as the PFC signal input terminal INPFC; the Com terminal of the PFC driver chip A5 is connected to the Com terminal of the first high-side driver chip A1 and the Com terminal of the first low-side driver chip A3 inside the plastic package and is led out from the plastic package through the first low-side ground terminal COM1. The control terminal (G pole) of the PFC transistor Q51 is electrically connected to the PFC signal output terminal Outpfc of the PFC driver chip A5. The second terminal (E pole) of the PFC transistor Q51 is connected to the pin NX of the PFC negative terminal. The first terminal (C pole) of the PFC transistor Q51 is connected to the pin X of the PFC positive terminal and is connected to the positive electrode of the PFC diode D51. The negative electrode of the PFC diode D51 is connected to the first terminals of the first high-side transistors Q11-Q13 and the second high-side transistors Q21-Q23 inside the plastic package and is connected to the positive DC power supply terminal P of the power module 100.

[0111] Further, in order to reduce the number of pins, the first DC power supply negative terminals corresponding to the first low-side transistors Q31-Q33 are connected inside the plastic package and are connected to the common DC power supply negative terminal N of the first UVW phase of the power module 100.

[0112] Combined Figure 12 As shown, the PFC driver chip A5 is also located, for example, on the base island 8 having a high-side driver chip and a low-side driver chip. The PFC driver chip A5 is located, for example, between the first high-side driver chip A1 and the second high-side driver chip A2. The power factor correction signal input terminal of the PFC driver chip A5 is led out from the fourth side 114 of the plastic package through the pin INPFC.

[0113] The PFC transistor Q51 is located on the base island 9, for example. The control terminal (gate) of the PFC transistor Q51 is electrically connected to the PFC driver chip A5. The second terminal (emitter) of the PFC transistor Q51 is connected to the pin NX of the FPC negative terminal and led out from the third side 113. The base island 9 is connected to the PFC positive terminal and led out from the third side 113 through the pin X. The base island 9 is located near the base island 4, and the PFC transistor Q51 is located between the first high-side transistors Q11 - Q13 and the second high-side transistors Q21 - Q23.

[0114] The PFC diode D51 is located on the base island 4 together with the first high-side transistors Q11 - Q13 and the second high-side transistors Q21 - Q23, for example. The PFC diode D51 is located near the second high-side transistors Q21 - Q23, for example, and the PFC diode D51 is electrically connected to the base island 9.

[0115] Figure 13 The schematic diagram of the package of the power module according to the tenth embodiment of the present invention is shown; the power module of the tenth embodiment is similar to the ninth embodiment, except that the power module of the tenth embodiment further includes a heat dissipation substrate 115, and the first low-side transistors Q21 - Q23, the first high-side transistors Q11 - Q13, the PFC transistor Q51, the second high-side transistors Q21 - Q23, and the second low-side transistors Q11 - Q13 are all located on the DBC ceramic substrate 115.

[0116] Exemplarily, the bonding wire can be a gold wire or an aluminum wire.

[0117] Exemplarily, each high-side transistor and low-side transistor of the power module in this embodiment is an insulated gate bipolar transistor and a fast recovery diode. The insulated gate bipolar transistor and the fast recovery diode in each high-side transistor or low-side transistor are arranged alternately, or the insulated gate bipolar transistor and the fast recovery diode are arranged one above the other.

[0118] Figure 14 and Figure 15 respectively show the schematic circuit diagram and the schematic diagram of the package of the power module according to the eleventh embodiment of the present invention; as Figure 14 shown, on the basis of Figure 6 it adds a power factor correction unit, and this power factor correction unit includes a PFC transistor Q51, a PFC driver chip A5, and a PFC diode D51.

[0119] See Figure 15 which, on the basis of Figure 8Based on this, a power factor correction unit is added to the first side of the plastic package 110. Specifically, the base island 9 extends towards the first side, adding the PFC drive chip A5 located on the base island 9, and adding the base island 10 arranged side by side with the base islands 1-8. The PFC transistor Q51 is arranged on the base island 10, the PFC diode D51 is located on the base island 1, the positive electrode of the PFC diode D51 and the first end (C pole) of the PFC transistor Q51 are both connected to the pin X of the PFC positive terminal. On the side of the pin X of the PFC positive terminal close to the first side 111, there is also provided a pin NX of the PFC negative terminal, and the second end (E pole) of the PFC transistor Q51 is connected to the pin NX of the PFC negative terminal. The Vccl terminal of the PFC drive chip A5 is led out from the plastic package as the third low-side power supply terminal VCCL3; the inpfc terminal of the PFC drive chip A5 is led out from the plastic package as the PFC signal input terminal INPFC; the Com terminal of the PFC drive chip A5 is connected to the Com terminal of the first high-side drive chip A1 and the Com terminal of the first low-side drive chip A3 inside the plastic package and is led out from the plastic package through the low-side ground terminal COM. The G pole of the PFC transistor Q51 is electrically connected to the PFC signal output terminal Outpfc of the PFC drive chip A5, and the negative electrode of the PFC diode D51 is connected to the first ends of the first high-side transistors Q11-Q13 inside the plastic package and is connected to the first DC power supply positive terminal P1 of the power module 100.

[0120] Further, referring to Figure 13 and Figure 15 , the added power factor correction unit can be arranged either between the first power unit and the second power unit or on the side of the power unit with the larger output power among the first power unit and the second power unit.

[0121] According to the packaging structure of the power module provided by the present utility model, the first power unit and the second power unit are integrated in the same power module, and some pins of the two power units can be connected inside the plastic package to realize the sharing of some external pins. This design can reduce the overall volume of the module, reduce the number of its pins and the occupied space, and also reduce the cost.

[0122] Further, the two power units can be respectively used to drive the compressor and the fan, which can effectively reduce the number of power modules required for the entire system, reduce the number and complexity of external wiring, and improve the usability.

[0123] Further, the bootstrap diode is integrated into the high-side drive chip, further reducing the overall volume; a heat dissipation substrate is added, and the high-side transistor and the low-side transistor are arranged on the heat dissipation substrate, further enhancing the heat dissipation performance of the power module. The power factor correction unit can also be integrated in this power module to improve the integration degree of the power module and reduce the overall volume and cost.

[0124] In the power module of the present application, the high-side drive chip is located in the middle area near the fourth side of the plastic package or on both sides of the plastic package extending along the length direction. The pin arrangement of the power module is beneficial to increasing the effective area for installing power devices, thereby increasing the size of the power devices and ensuring the overcurrent capacity of the power devices in the all-plastic package process without using the insulated substrate process. It is also beneficial to reducing the width of the power module, thereby reducing the overall size of the power module.

[0125] It should be noted that in this text, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device. Without further limitation, an element defined by the statement "including one..." does not exclude the existence of additional identical elements in the process, method, article or device including the said element.

[0126] According to the embodiments of the present invention as described above, these embodiments do not describe all the details in detail, nor do they limit the present invention to the specific embodiments described. Obviously, many modifications and variations can be made according to the above description. The present specification selects and specifically describes these embodiments in order to better explain the principle and practical application of the present invention, so that those skilled in the art can make good use of the present invention and its modifications based on the present invention. The present invention is only limited by the claims and their full scope and equivalents.

Claims

1. A packaging structure of a power module, characterized in that Comprising: A first power unit and a second power unit; A first low-side drive chip, a first high-side drive chip, a second low-side drive chip, a second high-side drive chip, a number of first low-side transistors driven by the first low-side drive chip, a number of second low-side transistors driven by the second low-side drive chip, a number of first high-side transistors driven by the first high-side drive chip, and a number of second high-side transistors driven by the second high-side drive chip; A lead frame having a plurality of pins; A plastic package that encapsulates the lead frame, the first low-side drive chip, the first high-side drive chip, the second low-side drive chip, the second high-side drive chip, the number of first low-side transistors, the number of first high-side transistors, the number of second low-side transistors, and the number of second high-side transistors; the plastic package includes opposite first and second sides, and opposite third and fourth sides, the first and second sides extend in the width direction, and the third and fourth sides extend in the length direction; The plurality of pins extend to the outside along the third and fourth sides of the plastic package; The first power unit includes the first low-side drive chip, the first high-side drive chip, the number of first low-side transistors, and the number of first high-side transistors; The second power unit includes the second low-side drive chip, the second high-side drive chip, the number of second low-side transistors, and the number of second high-side transistors.

2. The packaging structure of the power module according to claim 1, wherein The relative positions of the first high-side drive chip, the second high-side drive chip, the first low-side drive chip, and the second low-side drive chip are: The first high-side drive chip and the second high-side drive chip are located in the middle region of the plastic package extending in the length direction, and the first low-side drive chip and the second low-side drive chip are respectively located in the two side regions of the plastic package extending in the length direction.

3. The packaging structure of the power module according to claim 1, wherein The first high-side drive chip and the second high-side drive chip are respectively located in the two side regions of the plastic package extending in the length direction, and the first low-side drive chip and the second low-side drive chip are located in the middle region of the plastic package extending in the length direction.

4. The packaging structure of the power module according to claim 1, wherein A first virtual axis is parallel to the third and fourth sides and is located between the third and fourth sides, The first low-side drive chip, the first high-side drive chip, the second low-side drive chip, and the second high-side drive chip are located between the fourth side of the plastic package and the first virtual axis; The number of first low-side transistors, the number of first high-side transistors, the number of second high-side transistors, and the number of second low-side transistors are located between the third side of the plastic package and the first virtual axis.

5. The encapsulation structure of the power module according to claim 4, wherein, The distance between the first virtual axis and the fourth side is less than the distance between the first virtual axis and the third side.

6. The packaging structure of the power module according to claim 1, wherein The second virtual axis is parallel to the first side and the second side, and the second virtual axis is located between the first side and the second side. The first power unit is close to the first side of the plastic package body, and the second power unit is close to the second side of the plastic package body.

7. The packaging structure of the power module according to claim 6, wherein The pins with the same function on the third side of the first power unit and the second power unit are arranged in the same order along the second virtual axis to both sides.

8. The packaging structure of the power module according to claim 6, wherein The pins with the same function on the fourth side of the first power unit and the second power unit are arranged in the same order along the second virtual axis to both sides.

9. The encapsulation structure of the power module according to claim 2, characterized in that, The plurality of first high-side transistors and the plurality of second high-side transistors are electrically connected to the same positive DC power supply terminal.

10. The encapsulation structure of the power module according to claim 2, characterized in that, The first power unit leads out a first low-side ground terminal on the fourth side, and the first low-side ground terminal is close to the first side; the second power unit leads out a second low-side ground terminal on the fourth side, and the second low-side ground terminal is close to the second side.

11. The encapsulation structure of the power module according to claim 2, characterized in that, It further includes a plurality of base islands, and the plurality of base islands include a first base island, a second base island, a third base island, a fourth base island, a fifth base island, a sixth base island, and a seventh base island arranged side by side in sequence along the length direction; The plurality of first low-side transistors include three first low-side transistors; the plurality of second low-side transistors include three second low-side transistors, the plurality of first high-side transistors include three first high-side transistors; the plurality of second high-side transistors include three second high-side transistors; The three first low-side transistors are respectively installed on the first base island, the second base island, and the third base island, the three first high-side transistors and the three second high-side transistors are all installed on the fourth base island, and the three second low-side transistors are respectively installed on the fifth base island, the sixth base island, and the seventh base island.

12. The encapsulation structure of the power module according to claim 11, characterized in that, The plurality of base islands further include an eighth base island, and a first low-side driver chip, a first high-side driver chip, a second high-side driver chip, and a second low-side driver chip are sequentially installed on the eighth base island.

13. The encapsulation structure of the power module according to claim 12, characterized in that, The first base island to the seventh base island are the base islands on the lead frame, and the fourth base island extends to the third side of the plastic package body and leads out the positive DC power supply terminal; The first base island, the second base island, and the third base island respectively extend to the third side of the plastic package body and lead out the third-phase output terminal of the first power unit, the second-phase output terminal of the first power unit, and the first-phase output terminal of the first power unit; The fifth base island, the sixth base island, and the seventh base island respectively extend to the third side of the plastic package body and lead out the first-phase output terminal of the second power unit, the second-phase output terminal of the second power unit, and the third-phase output terminal of the second power unit; The three-phase output terminals of the first power unit and the three-phase output terminals of the second power unit are symmetrically arranged on both sides of the positive DC power supply terminal in terms of the arrangement order.

14. The encapsulation structure of the power module according to claim 12, wherein The first base island to the seventh base island are base islands on the heat dissipation substrate. The fourth base island is connected to the positive DC power supply terminal by welding, and the positive DC power supply terminal is led out from the third side of the plastic package body. The first base island, the second base island, and the third base island are respectively connected to the third-phase output terminal, the second-phase output terminal, and the first-phase output terminal of the first power unit by welding, and the three-phase output terminals of the first power unit are led out from the third side of the plastic package body. The fifth base island, the sixth base island, and the seventh base island are respectively connected to the first-phase output terminal, the second-phase output terminal, and the third-phase output terminal of the second power unit by welding, and the three-phase output terminals of the second power unit are led out from the third side of the plastic package body. The three-phase output terminals of the first power unit and the three-phase output terminals of the second power unit are symmetrically arranged on both sides of the positive DC power supply terminal in terms of the arrangement order.

15. The encapsulation structure of the power module according to claim 13 or 14, characterized in that, The three-phase output terminals of the first power unit are located between the positive DC power supply terminal and the three-phase DC power supply negative terminal of the first power unit; the three-phase output terminals of the second power unit are located between the positive DC power supply terminal and the three-phase DC power supply negative terminal of the second power unit.

16. The packaging structure of the power module according to claim 13 or 14, wherein The low-voltage pins connected to the first low-side transistor on the third side and the low-voltage pins connected to the second low-side transistor on the third side are respectively located at both ends of the third side. The low-voltage pins connected to the first low-side drive chip on the fourth side and the low-voltage pins connected to the second low-side drive chip on the fourth side are respectively located at both ends of the fourth side. The high-voltage pins connected to the first high-side transistor on the third side and the high-voltage pins connected to the second high-side transistor on the third side are located in the middle area of the third side. The high-voltage pins connected to the first high-side drive chip on the fourth side and the high-voltage pins connected to the second high-side drive chip on the fourth side are located in the middle area of the fourth side.

17. The encapsulation structure of the power module according to claim 15, characterized in that, The high-voltage pins arranged in sequence from the first side to the second side on the third side include: the first W-phase output terminal, the first V-phase output terminal, the first U-phase output terminal, the positive DC power supply terminal, the second U-phase output terminal, the second V-phase output terminal, the second W-phase output terminal.

18. The encapsulation structure of the power module according to claim 16, characterized in that, The high-voltage pins arranged in sequence from the first side to the second side on the fourth side include: the first W-phase high-side drive floating power supply terminal, the first W-phase high-side drive floating power supply ground terminal, the first V-phase high-side drive floating power supply terminal, the first V-phase high-side drive floating power supply ground terminal, the first U-phase high-side drive floating power supply terminal, the first U-phase high-side drive floating power supply ground terminal, the second U-phase high-side drive floating power supply ground terminal, the second U-phase high-side drive floating power supply terminal, the second V-phase high-side drive floating power supply ground terminal, the second V-phase high-side drive floating power supply terminal, the second W-phase high-side drive floating power supply ground terminal, and the second W-phase high-side drive floating power supply terminal.

19. The packaging structure of the power module according to claim 15, wherein The pins arranged in sequence from the first side to the second side on the third side include: the first W-phase DC power supply negative terminal, the first V-phase DC power supply negative terminal, the first U-phase DC power supply negative terminal, the first W-phase output terminal, the first V-phase output terminal, the first U-phase output terminal, the DC power supply positive terminal, the second U-phase output terminal, the second V-phase output terminal, the second W-phase output terminal, the second U-phase DC power supply negative terminal, the second V-phase DC power supply negative terminal, and the second W-phase DC power supply negative terminal.

20. The encapsulation structure of the power module according to claim 16, wherein The pins arranged in sequence from the first side to the second side on the fourth side include: the first low-side ground terminal, the first W-phase low-side signal input terminal, the first V-phase low-side signal input terminal, the first U-phase low-side signal input terminal, the first low-side power supply terminal, the first W-phase high-side signal input terminal, the first V-phase high-side signal input terminal, the first U-phase high-side signal input terminal, the first W-phase high-side drive floating power supply terminal, the first W-phase high-side drive floating power supply ground terminal, the first V-phase high-side drive floating power supply terminal, the first V-phase high-side drive floating power supply ground terminal, the first U-phase high-side drive floating power supply terminal, the first U-phase high-side drive floating power supply ground terminal, the second U-phase high-side drive floating power supply ground terminal, the second U-phase high-side drive floating power supply terminal, the second V-phase high-side drive floating power supply ground terminal, the second V-phase high-side drive floating power supply terminal, the second W-phase high-side drive floating power supply ground terminal, the second W-phase high-side drive floating power supply terminal, the second U-phase high-side signal input terminal, the second V-phase high-side signal input terminal, the second W-phase high-side signal input terminal, the second low-side power supply terminal, the second U-phase low-side signal input terminal, the second V-phase low-side signal input terminal, the second W-phase low-side signal input terminal, and the second low-side ground terminal.

21. The encapsulation structure of the power module according to claim 3, characterized in that, The several first high-side transistors are electrically connected to the first DC power supply positive terminal, the several second high-side transistors are electrically connected to the second DC power supply positive terminal, and the first DC power supply positive terminal and the second DC power supply positive terminal are respectively located at both ends of the third side.

22. The encapsulation structure of the power module according to claim 3, wherein The first power unit and the second power unit share the same common ground terminal on the fourth side.

23. The encapsulation structure of the power module according to claim 3, characterized in that, It further includes a plurality of base islands, and the plurality of base islands include a first base island, a second base island, a third base island, a fourth base island, a fifth base island, a sixth base island, a seventh base island, and an eighth base island arranged in parallel in sequence along the length direction; The several first low-side transistors include three first low-side transistors, the several second low-side transistors include three second low-side transistors, the several first high-side transistors include three first high-side transistors, and the several second high-side transistors include three second high-side transistors; The three first high-side transistors are all mounted on the first base island, and the three first low-side transistors are respectively mounted on the second base island, the third base island, and the fourth base island; The three second low-side transistors are respectively mounted on the fifth base island, the sixth base island, and the seventh base island, and the three second high-side transistors are all mounted on the eighth base island.

24. The encapsulation structure of the power module according to claim 23, wherein The multiple base islands further include a ninth base island, and a first high-side drive chip, a first low-side drive chip, a second low-side drive chip, and a second high-side drive chip are sequentially mounted on the ninth base island.

25. The encapsulation structure of the power module according to claim 24, characterized in that, The first base island to the eighth base island are base islands on the lead frame. The first base island extends to the third side of the plastic package and leads out a first DC power supply positive terminal; The eighth base island extends to the third side of the plastic package and leads out a second DC power supply positive terminal; The second base island, the third base island, and the fourth base island respectively extend to the third side of the plastic package and lead out the first-phase output terminal of the first power unit, the second-phase output terminal of the first power unit, and the third-phase output terminal of the first power unit; The fifth base island, the sixth base island, and the seventh base island respectively extend to the third side of the plastic package and lead out the first-phase output terminal of the second power unit, the second-phase output terminal of the second power unit, and the third-phase output terminal of the second power unit; The first DC power supply positive terminal and the second DC power supply positive terminal are respectively located at both ends of the third side; The three-phase output terminals of the first power unit are arranged close to the first DC power supply positive terminal, and the three-phase output terminals of the second power unit are arranged close to the second DC power supply positive terminal.

26. The encapsulation structure of the power module according to claim 24, characterized in that, The first base island to the eighth base island are base islands on the heat dissipation substrate. The first base island is connected to the first DC power supply positive terminal by welding, and the first DC power supply positive terminal is led out from the third side of the plastic package; The eighth base island is connected to the second DC power supply terminal by welding, and the second DC power supply positive terminal is led out from the third side of the plastic package; The second base island, the third base island, and the fourth base island are respectively connected to the first-phase output terminal of the first power unit, the second-phase output terminal of the first power unit, and the third-phase output terminal of the first power unit by welding, and the three-phase output terminals of the first power unit are led out from the third side of the plastic package; The fifth base island, the sixth base island, and the seventh base island are respectively connected to the third-phase output terminal of the second power unit, the second-phase output terminal of the second power unit, and the first-phase output terminal of the second power unit by welding, and the three-phase output terminals of the second power unit are led out from the third side of the plastic package; The first DC power supply positive terminal and the second DC power supply positive terminal are respectively located at both ends of the third side; the three-phase output terminals of the first power unit are arranged close to the first DC power supply positive terminal, and the three-phase output terminals of the second power unit are arranged close to the second DC power supply positive terminal.

27. The encapsulation structure of the power module according to claim 25 or 26, characterized in that, The three-phase output terminals of the first power unit are located between the first DC power supply positive terminal and the three-phase DC power supply negative terminal of the first power unit; the three-phase output terminals of the second power unit are located between the second DC power supply positive terminal and the three-phase DC power supply negative terminal of the second power unit.

28. The packaging structure of the power module according to claim 27, wherein The low-voltage pins connected to the first low-side transistor on the third side and the low-voltage pins connected to the second low-side transistor on the third side are located in the middle area of the third side; The low-voltage pins connected to the first low-side drive chip on the fourth side and the low-voltage pins connected to the second low-side drive chip on the fourth side are located in the middle area of the fourth side; The high-voltage pins connected to the first high-side transistor on the third side and the high-voltage pins connected to the second high-side transistor on the third side are respectively located at both ends of the third side; The high-voltage pins connected to the first high-side drive chip on the fourth side and the high-voltage pins connected to the second high-side drive chip on the fourth side are respectively located at both ends of the fourth side.

29. The encapsulation structure of the power module according to claim 27, characterized in that, The high-voltage pins arranged in sequence from the first side to the second side on the third side include: the first DC power supply positive terminal, the first U-phase output terminal, the first V-phase output terminal, the first W-phase output terminal, the second W-phase output terminal, the second V-phase output terminal, the second U-phase output terminal, and the second DC power supply positive terminal.

30. The encapsulation structure of the power module according to claim 28, characterized in that, The high-voltage pins arranged in sequence from the first side to the second side on the fourth side include: the first U-phase high-side drive floating power supply ground terminal, the first U-phase high-side drive floating power supply terminal, the first V-phase high-side drive floating power supply ground terminal, the first V-phase high-side drive floating power supply terminal, the first W-phase high-side drive floating power supply ground terminal, the first W-phase high-side drive floating power supply terminal, the second W-phase high-side drive floating power supply terminal, the second W-phase high-side drive floating power supply ground terminal, the second V-phase high-side drive floating power supply terminal, the second V-phase high-side drive floating power supply ground terminal, the second U-phase high-side drive floating power supply terminal, and the second U-phase high-side drive floating power supply ground terminal.

31. The packaging structure of the power module according to claim 27, wherein The pins arranged in sequence from the first side to the second side on the third side include: the first DC power supply positive terminal, the first U-phase output terminal, the first V-phase output terminal, the first W-phase output terminal, the first U-phase DC power supply negative terminal, the first V-phase DC power supply negative terminal, the first W-phase DC power supply negative terminal, the second W-phase DC power supply negative terminal, the second V-phase DC power supply negative terminal, the second U-phase DC power supply negative terminal, the second W-phase output terminal, the second V-phase output terminal, the second U-phase output terminal, and the second DC power supply negative terminal.

32. The encapsulation structure of the power module according to claim 28, characterized in that, The pins arranged in sequence from the first side to the second side on the fourth side include: The first U-phase high-side drive floating power supply ground terminal, the first U-phase high-side drive floating power supply terminal, the first V-phase high-side drive floating power supply ground terminal, the first V-phase high-side drive floating power supply terminal, the first W-phase high-side drive floating power supply ground terminal, the first W-phase high-side drive floating power supply terminal, the first U-phase high-side signal input terminal, the first V-phase high-side signal input terminal, the first W-phase high-side signal input terminal, the first low-side power supply terminal, the first U-phase low-side signal input terminal, the first V-phase low-side signal input terminal, the first W-phase low-side signal input terminal, the common ground terminal, the second W-phase low-side signal input terminal, the second V-phase low-side signal input terminal, the second U-phase low-side signal input terminal, the second low-side power supply terminal, the second W-phase high-side signal input terminal, the second V-phase high-side signal input terminal, the second U-phase high-side signal input terminal, the second W-phase high-side drive floating power supply terminal, the second W-phase high-side drive floating power supply ground terminal, the second V-phase high-side drive floating power supply terminal, the second V-phase high-side drive floating power supply ground terminal, the second U-phase high-side drive floating power supply terminal, the second U-phase high-side drive floating power supply ground terminal.

33. The encapsulation structure of the power module according to claim 24, wherein The ninth base island extends towards the fourth side and leads out the common ground terminal, and the common ground terminal is located at the middle position of the fourth side.

34. The encapsulation structure of the power module according to claim 24, wherein, The ninth base island extends towards the fourth side and leads out the common ground terminal, and the common ground terminal is located at both ends of the fourth side.

35. The encapsulation structure of the power module according to claim 1, characterized in that, The negative DC power supply terminals of each phase of the first power unit are respectively led out as pins from the plastic package, or the negative DC power supply terminals of each phase of the first power unit are combined into one negative DC power supply terminal and led out as a pin from the plastic package.

36. The encapsulation structure of the power module according to claim 1, wherein, The negative DC power supply terminals of each phase of the second power unit are respectively led out as pins from the plastic package, or the negative DC power supply terminals of each phase of the second power unit are combined into one negative DC power supply terminal and led out as a pin from the plastic package.

37. The encapsulation structure of the power module according to claim 1, wherein The first power unit and the second power unit share a fault alarm signal output terminal, an overcurrent detection input terminal, and a temperature signal output terminal; The fault alarm signal output terminal, the overcurrent detection input terminal, and the temperature signal output terminal are led out by the low-side drive chip of the power unit with the larger output power among the first power unit and the second power unit, realizing the functions of fault alarm, overcurrent detection, and temperature detection of the entire power module.

38. The encapsulation structure of the power module according to claim 1, characterized in that, The power supply terminal of the first high-side drive chip and the power supply terminal of the first low-side drive chip are shared, and the power supply terminal of the second high-side drive chip and the power supply terminal of the second low-side drive chip are shared.

39. The encapsulation structure of the power module according to claim 1, wherein Multiple bootstrap diodes are integrated inside the high-side drive chip.

40. The encapsulation structure of the power module according to claim 1, wherein, Two through holes are provided on the plastic package, and the through holes are used for screwing and locking to install a radiator.

41. The encapsulation structure of the power module according to claim 2, characterized in that, It further includes a power factor correction unit, and the power factor correction unit includes a PFC transistor, a PFC diode, and a PFC drive chip.

42. The encapsulation structure of the power module according to claim 41, characterized in that, The PFC transistor is located near the first high-side transistor and the second high-side transistor. The PFC driver chip, the first low-side driver chip, the first high-side driver chip, the second low-side driver chip, and the second high-side driver chip are located on the same base island. The PFC diode and the first high-side transistor and the second high-side transistor are located on the same base island.

43. The encapsulation structure of the power module according to claim 3, wherein It further includes a power factor correction unit, and the power factor correction unit includes a PFC transistor, a PFC diode, and a PFC driver chip.

44. The encapsulation structure of the power module according to claim 43, characterized in that, The PFC driver chip, the first low-side driver chip, the first high-side driver chip, the second low-side driver chip, and the second high-side driver chip are located on the same base island. The PFC transistor is located near the high-side transistor of the power unit with a larger output power among the first power unit and the second power unit. The PFC diode and the high-side transistor are located on the same base island.

45. The encapsulation structure of the power module according to claim 1, wherein, The first high-side transistor, the second high-side transistor, the first low-side transistor, the second low-side transistor, and the PFC transistor are any one of Si MOS devices, SiC MOS devices, GaN MOS devices, RC-IGBT devices, IGBT devices, and IGBT devices with a fast recovery diode encapsulated together.

46. The encapsulation structure of the power module according to claim 1, characterized in that, The power module is in a through-hole package or a surface-mount package.

47. The encapsulation structure of the power module according to claim 1, characterized in that, The first power unit drives the motor of the compressor, and the second power unit drives the motor of the fan.

48. The encapsulation structure of the power module according to claim 1, characterized in that, The output power of the first power unit is greater than the output power of the second power unit.

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