Ion beam etching system and device

Abstract

The utility model discloses an ion beam etching system and device, and the system comprises an ion beam assembly which is used for emitting a plurality of ion beams; the slide glass assembly is used for bearing an etching substrate, the etching substrate is used for being etched by a plurality of ion beams to form an inclined grating structure, and the included angle between the plane where the etching substrate is located and the emergent plane of the ion beam assembly is a set angle; the rotating assembly is used for controlling different areas on the etching substrate to be etched by different ion beams at different moments by driving the target assembly to rotate around a first rotating shaft corresponding to the target assembly, the first rotating shaft is parallel to the emitting direction of the target ion beams, and the target assembly comprises at least one of an ion beam assembly and a slide glass assembly. Therefore, the bombardment energy of the ion beams projected to the same area of the etching substrate in the rotating process changes, but the etching direction and angle of the ion beams are unchanged, so that the uniformity of the inclined grating structure formed by etching can be improved, and the inclination angle and inclination direction of the inclined grating structure are kept unchanged.

Description

Technical Field

[0001] The present application relates to the field of optical technology, and in particular to an ion beam etching system and device. Background Art

[0002] As an excellent dispersion element, gratings have been widely used in the fields of optical communications and spectral analysis. When the grating is etched to form an inclined structure, the light energy of the grating is concentrated in a predetermined direction, so that the inclined grating structure can have functions such as splitting and filtering.

[0003] In the related art, when using ion beam etching technology to form a tilted grating structure, due to the uneven energy distribution of the ion beam prepared in the etching device, the tilted grating structure formed by the ion beam etching of the etched substrate often has a problem of poor uniformity. Utility Model Content

[0004] Embodiments of the present application provide an ion beam etching system and device.

[0005] In the first aspect, an embodiment of the present application provides an ion beam etching system, comprising: an ion beam assembly, which is used to emit multiple ion beams; a wafer assembly, which is arranged in the emission direction of the multiple ion beams, and the wafer assembly is used to carry an etching substrate, and the etching substrate is used to be etched by the multiple ion beams to form an inclined grating structure, and the angle between the plane where the etching substrate is located and the plane where the ion beam assembly is located is a set angle; a rotating assembly, which is connected to a target assembly, and the rotating assembly is used to drive the target assembly to rotate around a first rotation axis corresponding to the target assembly, so that the projection positions of the multiple ion beams on the etching substrate change, so as to control different areas on the etching substrate to be etched by different ion beams at different times, the first rotation axis corresponding to the target assembly is parallel to the emission direction of the target ion beam, the target assembly includes at least one of the ion beam assembly and the wafer assembly, and the target ion beam includes at least one of the multiple ion beams.

[0006] Optionally, the rotating assembly is connected to the carrier assembly, and the rotating assembly is used to drive the carrier assembly to rotate around a second rotation axis so that the angle between the plane where the etching substrate is located and the plane where the ion beam assembly is located is the set angle, and the second rotation axis is perpendicular to the first rotation axis.

[0007] Optionally, there is a first offset distance between the center of the etching substrate and a first rotation axis corresponding to the target component, and the first offset distance is greater than 0 mm and less than 100 mm.

[0008] Optionally, there is a second offset distance between the central axis of the ion beam assembly and the first rotation axis corresponding to the target assembly, and the second offset distance is greater than 0 mm and less than 100 mm.

[0009] Optionally, an angle between the first rotation axis and the emission direction of any one of the ion beams is greater than or equal to 0° and less than 5°.

[0010] Optionally, the ion beam assembly includes an ion source and a grid; the ion source is used to emit plasma; the grid is arranged in the emission direction of the ion source, the grid is used to accelerate the plasma to form the multiple ion beams, and emit the multiple ion beams, and the plane where the grid is located is parallel to the plane where the ion source is located.

[0011] Optionally, the target component includes the ion beam component, the rotating component is connected to the sub-target component, the rotating component is used to drive the sub-target component to rotate around the first rotation axis corresponding to the sub-target component, and the sub-target component includes the ion source and at least one of the grids.

[0012] Optionally, the etching substrate includes a base layer, a layer to be etched, and a mask layer; the base layer is arranged on the first side of the layer to be etched, and the base layer is used to support the layer to be etched; the mask layer is arranged on the second side of the layer to be etched, and the mask layer is used to pass the ion beam and project the passed ion beam onto the layer to be etched, so that the layer to be etched is etched by the passed ion beam to form the inclined grating structure.

[0013] In a second aspect, an embodiment of the present application provides an ion beam etching device, comprising: a shell and the above-mentioned ion beam etching system; a vacuum etching chamber is formed in the shell, and the vacuum etching chamber is used to accommodate the ion beam etching system.

[0014] In the ion beam etching system provided by the present application, when the angle between the plane where the etching substrate is located and the plane where the ion beam assembly is located is at a set angle, the target assembly (at least one of the ion beam assembly and the carrier assembly) is driven to rotate around the first rotation axis by using a rotating assembly, so that the projection positions of the multiple ion beams emitted by the ion beam assembly on the etching substrate change, and the bombardment energy of the ion beam projected onto the same area of the etching substrate during the rotation process can be controlled to change, thereby improving the uniformity of the inclined grating structure formed by etching. Moreover, since the first rotation axis corresponding to the target assembly during the rotation process is parallel to the emission direction of at least one of the multiple ion beams emitted by the ion beam assembly, the inclination angle and inclination direction of the multiple ion beams when etching the etching substrate during the rotation process can remain unchanged, thereby maintaining the inclination angle and inclination direction of the multiple grooves (or through holes) in the inclined grating structure obtained by etching unchanged.

[0015] These and other aspects of the present application will become more readily apparent from the description of the following embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0017] Figure 1 A schematic structural diagram of an ion beam etching system provided in one embodiment of the present application is shown.

[0018] Figure 2 A schematic diagram of ion beam etching during the rotation of the first rotation axis provided by an embodiment of the present application is shown.

[0019] Figure 3 A schematic structural diagram of an ion beam etching system provided in another embodiment of the present application is shown.

[0020] Figure 4 A schematic structural diagram of a tilted grating structure formed by etching a substrate provided by an embodiment of the present application is shown.

[0021] Figure 5 A schematic diagram of the rotation of the slide assembly provided in one embodiment of the present application is shown.

[0022] Figure 6 A schematic diagram of the staggered arrangement of components provided in one embodiment of the present application is shown.

[0023] Figure 7 A schematic diagram of staggered arrangement of components provided in another embodiment of the present application is shown.

[0024] Figure 8 A schematic diagram of staggered arrangement of components provided in another embodiment of the present application is shown.

[0025] Figure 9 A schematic diagram of staggered arrangement of components provided in yet another embodiment of the present application is shown.

[0026] Figure 10 A schematic structural diagram of an ion beam etching device provided in one embodiment of the present application is shown. DETAILED DESCRIPTION

[0027] In order to enable those skilled in the art to better understand the present invention, the following will provide a clear and complete description of the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0028] The terms "first," "second," and the like in this application are used to distinguish between different objects, not to describe a particular order. Furthermore, the terms "including," "having," and any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or elements is not limited to the listed steps or elements, but may optionally include steps or elements not listed, or may optionally include other steps or elements inherent to the process, method, product, or apparatus.

[0029] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0030] Please refer to Figure 1 , Figure 1 The structural diagram of the ion beam etching system 1 provided in one embodiment of the present application is shown. Figure 1 The ion beam etching system 1 provided in the embodiment of the present application is described in detail. Figure 1 As shown, the ion beam etching system 1 of this embodiment includes an ion beam assembly 10 , a wafer carrier assembly 20 and a rotating assembly 30 .

[0031] In this embodiment, the ion beam assembly 10 is configured to emit multiple ion beams, which can be used to etch a variety of materials, including numerous compounds and alloys. During the ion beam etching process, when directed high-energy ions impact the surface of the substrate 40 being etched, energy is transferred from the incident ions to the surface atoms of the substrate 40 being etched. If the binding energy between the atoms on the surface of the substrate 40 is lower than the energy of the incident ions, the surface atoms of the substrate 40 are displaced or removed from the surface, thereby achieving etching of the substrate 40.

[0032] Optionally, a wafer carrier assembly 20 is provided in the direction of emission of the multiple ion beams, and the wafer carrier assembly 20 is used to support the etched substrate 40. Furthermore, the angle between the plane of the etched substrate 40 and the plane of the ion beam assembly 10 is a set angle, that is, the angle between the central axis of the etched substrate 40 and the central axis of the ion beam assembly 10 is a set angle. When the multiple ion beams emitted by the ion beam assembly 10 are projected onto the etched substrate 40, the etched substrate 40 is etched by the multiple ion beams to form a tilted grating structure, and the tilted grating structure may also include but is not limited to a tilted grating and a blazed grating.

[0033] Optionally, the tilted grating includes a plurality of grooves (or through holes), and the angle between the axes of the plurality of grooves (or through holes) and the surface of the tilted grating is a set angle. The surface of the blazed grating is serrated, that is, the tilted structure of the blazed grating has surfaces with different tilt angles on the left and right sides, and the tilted structure corresponding to the blazed grating can be formed by oblique etching in two oblique directions. When the grating is etched to form an inclined structure, the light energy of the grating is concentrated in a predetermined direction, that is, at a certain spectral level. When detecting from this direction, the intensity of the spectrum is the largest, that is, the tilted grating structure has functions such as splitting and filtering, and can be widely used in ultra-precision measurement systems, spectrometers, semiconductor lasers, display technology and other technical fields.

[0034] It should be noted that when using ion beam etching technology to form a tilted grating structure, a grating mask is typically first produced using holographic lithography and then transferred to the grating etching substrate 40 via ion beam etching. This technique offers advantages such as controllable groove tilt angles, fast etching rates, good selectivity, and minimal surface damage. However, after the working gas is ionized to generate a plasma in the ion beam assembly 10, the plasma is effectively extracted and accelerated to form an ion beam. Furthermore, due to the inherent non-uniformity of the magnetic field that confines the ion beam and the mutual repulsion of the charged ions, it is difficult to ensure the uniformity of the ion beam emitted from the ion beam assembly 10. In this way, after the multiple ion beams emitted by the ion beam assembly 10 are projected onto the etched substrate 40, the etched substrate 40 is etched by multiple non-uniform ion beams to form a tilted grating structure with poor uniformity. The non-uniformity of the tilted grating structure is often reflected in the uneven depth of the grating etched tilted structure or the uneven morphology of the bottom of the structure, resulting in poor performance of the optical waveguide prepared based on the non-uniform tilted grating structure, which is difficult to meet the needs of practical applications.

[0035] Optionally, the rotating assembly 30 is used to drive the target assembly to rotate around a first rotation axis 31 corresponding to the target assembly. During the rotation of the target assembly, the multiple ion beams emitted by the ion beam assembly 10 rotate relative to the etching substrate 40, and the first rotation axis 31 corresponding to the target assembly is parallel to the emission direction of the target ion beam, wherein the target assembly includes at least one of the ion beam assembly 10 and the carrier assembly 20, and the target ion beam includes at least one of the multiple ion beams. At this time, the rotating assembly 30 drives the target assembly to rotate around the first rotation axis 31, and the angle between the plane where the etching substrate 40 is located and the plane where the ion beam assembly 10 is located is maintained at a set angle, so that the projection positions of the multiple ion beams on the etching substrate 40 can be changed, thereby controlling different areas on the etching substrate 40 to be etched by different ion beams at different times.

[0036] Optionally, if the target component is an ion beam component 10 or a wafer component 20, that is, when the rotating component 30 drives one of the ion beam component 10 and the wafer component 20 to rotate, the projection positions of multiple ion beams on the etching substrate 40 change; if the target component includes the ion beam component 10 and the wafer component 20, that is, when the rotating component 30 drives both the ion beam component 10 and the wafer component 20 to rotate, the rotation directions can be the same or different, and when the rotation directions are the same, the rotating component 30 is designed to control the rotation speed of the ion beam component 10 around its corresponding first rotation axis 31 to be unequal to the rotation speed of the wafer component 20 around its corresponding first rotation axis 31, so that the projection positions of multiple ion beams on the etching substrate 40 can change.

[0037] Optionally, the first rotation axis 31 corresponding to the target component can be an actual rotation axis or a virtual rotation axis, which is not limited here. If the first rotation axis 31 is an actual rotation axis, the first rotation axis 31 is connected to the target component, and the rotating component 30 is rotationally connected to the target component through the first rotation axis 31 corresponding to the target component. The rotating component 30 drives the first rotation axis 31 to rotate, so that the target component rotates with the rotation of the first rotation axis 31; if the first rotation axis 31 is a virtual rotation axis, when the rotating component 30 drives the target component to rotate, the target component rotates around the first rotation axis corresponding to the target component.

[0038] In this embodiment, if Figure 2 As shown, Figure 2 A schematic diagram of ion beam etching during the rotation of the first rotation axis 31 provided in one embodiment of the present application is shown.

[0039] Optionally, if the target assembly includes a wafer carrier assembly 20, the rotating assembly is used to drive the wafer carrier assembly 20 to rotate about its corresponding first rotation axis 31, the first rotation axis 31 corresponding to the wafer carrier assembly 20 is parallel to the emission direction of the target ion beam, and the target ion beam includes at least one of the multiple ion beams. The etching substrate 40 is placed on the wafer carrier assembly 20 and rotates synchronously with the wafer carrier assembly 20. At this time, for the to-be-etched area A and the to-be-etched area B on the etching substrate 40:

[0040] In this embodiment, when the rotating assembly drives the wafer carrier assembly 20 to rotate N° around its corresponding first rotation axis 31, the relative distance between the area to be etched A and the plane where the ion beam assembly 10 is located is a first distance, and the relative distance between the area to be etched B and the plane where the ion beam assembly 10 is located is a second distance, and the first distance is less than the second distance. Furthermore, when the multiple ion beams etch the etching substrate 40, because the angle between the plane where the etching substrate 40 is located and the plane where the ion beam assembly 10 is located is a set angle, the first rotation axis 31 is parallel to the emission direction of at least some of the multiple ion beams, so that the multiple grooves (or through holes) etched by the multiple ion beams in the etching substrate 40 are tilted at a set angle.

[0041] In this embodiment, when the rotating assembly drives the wafer assembly 20 to rotate N°+180° around its corresponding first rotation axis 31, the relative distance between the area to be etched A and the plane where the ion beam assembly 10 is located remains the first distance, and the relative distance between the area to be etched B and the plane where the ion beam assembly 10 is located remains the second distance. At this time, the emission positions of the multiple ion beams remain unchanged, and the positions of the area to be etched A and the area to be etched B relative to the plane where the ion beam assembly 10 is located change, so that the ion beams received by the etching area A and the area to be etched B change, which is equivalent to the change in the projection position of the multiple ion beams on the etching substrate 40. However, when the projection position of the multiple ion beams on the etching substrate 40 changes, the tilt angle of the multiple grooves (or through holes) etched by the multiple ion beams on the etching substrate 40 remains the set angle, and when the multiple ion beams etch the etching substrate 40, the tilt direction of the multiple grooves (or through holes) of the tilted grating structure 41 obtained by etching remains unchanged.

[0042] Based on this, by using a rotating assembly to drive the target assembly to rotate about the first rotation axis 31 corresponding to the target assembly, the projection positions of the multiple ion beams on the etching substrate 40 are changed, thereby controlling different areas on the etching substrate 40 to be etched by different ion beams at different times, thereby changing the bombardment energy of the ion beams reaching the same area of the etching substrate 40. Because ion beams with different energies have different etching rates on the etching substrate 40, in the process of controlling different areas on the etching substrate 40 to be etched by different ion beams at different times, the etching rate can be uniformed across the substrate 40, thereby improving the uniformity of the tilted grating structure 41 formed by etching.

[0043] In this embodiment, since the first rotation axis 31 corresponding to the target component is parallel to the emission direction of the target ion beam during the rotation process, and the target ion beam includes at least one of the multiple ion beams, when the projection positions of the multiple ion beams on the etching substrate 40 change during the rotation process, the inclination angles of the multiple grooves (or through holes) etched by the multiple ion beams on the etching substrate 40 can be maintained at the set angles, thereby ensuring that the inclination angle and inclination direction of the inclined grating structure obtained by etching remain unchanged.

[0044] In this embodiment, when the angle between the plane where the etching substrate 40 is located and the plane where the ion beam assembly 10 is located is a set angle, the target assembly (at least one of the ion beam assembly 10 and the carrier assembly 20) is driven to rotate around the first rotation axis 31 by the rotation assembly 30, so that the projection positions of the multiple ion beams emitted by the ion beam assembly 10 on the etching substrate 40 change, and the bombardment energy of the ion beam projected onto the same area of the etching substrate 40 during the rotation process can be controlled to change, thereby improving the uniformity of the tilted grating structure formed by etching. In addition, since the first rotation axis 31 corresponding to the target assembly is parallel to the emission direction of the target ion beam during the rotation process, and the target ion beam includes at least one of the multiple ion beams, the tilt angle and tilt direction of the multiple ion beams when etching the etching substrate 40 during the rotation process can remain unchanged, thereby maintaining the tilt angle and tilt direction of the multiple grooves (or through holes) in the tilted grating structure obtained by etching unchanged.

[0045] Please refer to Figure 3 , Figure 3 The structural diagram of the ion beam etching system provided by another embodiment of the present application is shown below. Figure 3 The ion beam etching system provided in the embodiment of the present application is described in detail. Figure 3 As shown, the ion beam etching system of this embodiment includes an ion beam assembly 10 , a wafer carrier assembly 20 and a rotating assembly 30 .

[0046] In this embodiment, the ion beam assembly 10 is used to emit multiple ion beams, and the ion beam assembly 10 includes at least an ion source 11 and a grid 12. The ion source 11 is used to emit plasma, and the grid 12 is arranged in the emission direction of the ion source 11. The grid 12 is used to accelerate the plasma to form multiple ion beams and emit the multiple ion beams. The plane of the grid 12 is parallel to the plane of the ion source 11.

[0047] Specifically, the working gas in the chamber of the ion source 11 is excited under low pressure using radio frequency electromagnetic waves or other methods to generate plasma. The working gas can be an inert gas such as argon (Ar), krypton (Kr), helium (He), or methanol (CH3OH) gas, acetic acid (CH3COOH) gas, chlorine-based gas, fluorine-based gas, or a combination of several gases, but the gas type is not limited to the listed gas combinations. The plasma is extracted and accelerated in a beam shape by the grid 12 in the emission direction of the ion source 11 to form an ion beam. Finally, the ion beam reaches the surface of the etching substrate 40, and the bombardment of the accelerated ion beam can be used to achieve the purpose of physical etching.

[0048] Optionally, a wafer carrier assembly 20 is provided in the emission direction of multiple ion beams, and the wafer carrier assembly 20 is used to carry the etching substrate 40, and the angle between the plane where the etching substrate 40 is located and the plane where the ion beam assembly 10 is located is a set angle, so that when the multiple ion beams emitted by the ion beam assembly 10 are projected onto the etching substrate 40, the etching substrate 40 can be etched by the multiple ion beams to form an inclined grating structure.

[0049] In some embodiments, as Figure 4 As shown, Figure 4 A schematic structural diagram of an inclined grating structure formed by etching a substrate provided by an embodiment of the present application is shown. The etching substrate comprises at least a base layer 42, a layer to be etched 43 and a mask layer 44. The base layer 42 is arranged on a first side of the layer to be etched 43, and the base layer 42 is used to support the layer to be etched 43. The layer to be etched 43 can be made of one of silicon (Si) material, silicon dioxide (SiO2) material, silicon carbide (SiC) material and quartz, or a combination of at least two of them, and includes but is not limited to the above substrates and combinations. The mask layer 44 is arranged on the second side of the layer to be etched 43, and the mask layer 44 includes but is not limited to a grating mask. After the multiple ion beams drawn out from the grid are projected onto the mask layer 44, the mask layer 44 is used to transmit the ion beam and project the transmitted ion beam onto the layer to be etched 43, so that the layer to be etched 43 is etched by the transmitted ion beam to form an inclined grating structure 41.

[0050] In the present embodiment, a rotating assembly 30 is provided in the ion beam etching system and is connected to the wafer carrier assembly 20. To etch the etching substrate 40 to form a tilted grating structure, the rotating assembly 30 is controlled based on the grating tilt angle (set angle) required in actual applications to drive the wafer carrier assembly 20 to rotate about the second rotation axis, so that the angle between the plane where the etching substrate 40 is located and the plane where the ion beam assembly 10 is located is the set angle, wherein the second rotation axis is perpendicular to the first rotation axis 31. In the present embodiment, the rotating assembly 30 is also used to drive the target assembly to rotate about the first rotation axis 31. During the rotation of the target assembly, the multiple ion beams emitted by the ion beam assembly 10 rotate relative to the etching substrate 40, causing the projection positions of the multiple ion beams on the etching substrate 40 to change, thereby controlling different areas on the etching substrate 40 to be etched by different ion beams at different times, and the first rotation axis 31 corresponding to the target assembly is parallel to the emission direction of the target ion beam. Among them, when the ion beam assembly 10 emits multiple ion beams, due to the presence of a certain divergence angle of the ion beams, the first rotation axis 31 is parallel to the emission direction of at least one of the multiple ion beams, and the angle between the first rotation axis 31 and the emission direction of any of the multiple ion beams is greater than or equal to 0° and less than 5°.

[0051] like Figure 5 As shown, Figure 5 A schematic diagram illustrating the rotation of a wafer carrier assembly 20 according to one embodiment of the present application is shown. If the target assembly includes the wafer carrier assembly 20, a first rotation axis 31 corresponding to the wafer carrier assembly 20 is perpendicular to a second rotation axis 32 corresponding to the wafer carrier assembly 20. In other specific embodiments, the second rotation axis may not be located on the table of the wafer carrier assembly 20, but may be located somewhere above the wafer carrier assembly.

[0052] Optionally, after the rotating assembly drives the wafer carrier assembly 20 to rotate about the second rotating axis 32 by a certain angle, the angle between the plane of the wafer carrier assembly 20 and the plane of the ion beam assembly can be set to a set angle. In this case, the angle between the plane of the etched substrate supported by the wafer carrier assembly 20 and the plane of the ion beam assembly is the set angle. When the angle between the plane of the wafer carrier assembly 20 and the plane of the ion beam assembly reaches the set angle, the rotating assembly stops driving the wafer carrier assembly 20 to rotate about the second rotating axis 32. When the ion beam assembly emits multiple ion beams, the rotating assembly drives the wafer carrier assembly 20 to rotate about the first rotating axis 31, so that the projection positions of the multiple ion beams emitted by the ion beam assembly on the etched substrate change.

[0053] In some embodiments, if the target component includes an ion beam component 10, and when the ion beam component 10 includes an ion source 11 and a grid 12, the rotating component 30 is connected to the sub-target component in the ion beam component 10, and the sub-target component includes at least one of the ion source 11 and the grid 12, the rotating component 30 is used to drive the sub-target component to rotate around the first rotation axis 31 corresponding to the sub-target component to control different areas on the etching substrate 40 to be etched by different ion beams at different times.

[0054] Based on the above method, in the present application, the rotating assembly 30 can be used to drive at least one of the ion source 11, the grid 12 and the carrier assembly 20 to rotate around its corresponding first rotating axis 31, so as to control different areas on the etching substrate 40 to be etched by different ion beams in the ion beam etching system at different times, and the angle between the plane where the etching substrate 40 is located and the plane where the ion beam assembly 10 is located is maintained at a set angle, so that the bombardment energy of the ion beam reaching the same area of the etching substrate 40 changes. Since the etching rates of ion beams with different energies on the etching substrate 40 are different, in the process of controlling different areas on the etching substrate 40 to be etched by different ion beams at different times, the etching rate of the substrate 40 can be uniformly etched, thereby improving the uniformity of the inclined grating structure formed by etching. Among them, if the rotating assembly 30 drives two or three of the ion source 11, the grid 12 and the carrier assembly 20 to rotate, the rotating assembly 30 is designed to control the rotation speeds of the ion source 11, the grid 12 and the carrier assembly 20 around their corresponding first rotation axis 31 to be unequal, so that the projection positions of multiple ion beams on the etching substrate 40 can change, and the rotation directions can be the same or different.

[0055] In some embodiments, a first offset distance exists between the center of the etching substrate 40 and the axis of the first rotation axis 31 corresponding to the target component, and the first offset distance is greater than 0 mm and less than 100 mm.

[0056] As an implementation method, Figure 6 As shown, Figure 6 A schematic diagram of a component misalignment arrangement provided in one embodiment of the present application is shown. If the target component includes an ion beam assembly 10, that is, a first misalignment distance L1 is present between the center of the etched substrate 40 and the first rotation axis 31 corresponding to the ion beam assembly 10. When the rotation assembly 30 drives the ion beam assembly 10 to rotate about its corresponding first rotation axis 31, the ion beam projected onto the same area to be etched on the etched substrate 40 is emitted from a non-centrally symmetric position of the ion beam assembly 10. This causes the bombardment energy of the ion beam reaching the same area of the etched substrate 40 to vary, thereby improving the uniformity of the tilted grating structure formed by etching.

[0057] As an implementation method, Figure 7As shown, Figure 7 A schematic diagram of the component misalignment arrangement provided by another embodiment of the present application is shown. If the target component includes a wafer assembly 20, there is a first misalignment distance L1 between the center of the etching substrate 40 and the first rotation axis 31 corresponding to the wafer assembly 20, that is, the first rotation axis 31 corresponding to the wafer assembly 20 does not pass through its center. When the rotating assembly 30 drives the wafer assembly 20 to rotate around its corresponding first rotation axis 31, the ion beam emitted from the non-center-symmetrical position of the ion beam assembly 10 is projected onto the same area to be etched on the etching substrate 40, so that the bombardment energy of the ion beam reaching the same area of the etching substrate 40 varies, thereby improving the uniformity of the tilted grating structure formed by etching.

[0058] In some embodiments, a second offset distance is provided between the central axis of the ion beam assembly 10 and the first rotation axis 31 corresponding to the target assembly. The second offset distance is greater than 0 mm and less than 100 mm.

[0059] As an implementation method, Figure 8 As shown, Figure 8 A schematic diagram of component misalignment provided by another embodiment of the present application is shown. If the target component includes an ion beam assembly 10, that is, there is a second misalignment distance L2 between the central axis of the ion beam assembly 10 and the first rotation axis 31 corresponding to the ion beam assembly 10, that is, the central axis of the ion beam assembly 10 and its corresponding first rotation axis 31 do not overlap. When the rotating assembly 30 drives the ion beam assembly 10 to rotate around its corresponding first rotation axis 31, the ion beam emitted from the non-centrally symmetric position of the ion beam assembly 10 projected onto the same area to be etched on the etched substrate 40 causes the bombardment energy of the ion beam reaching the same area of the etched substrate 40 to vary, thereby improving the uniformity of the tilted grating structure formed by etching.

[0060] As an implementation method, Figure 9 As shown, Figure 9 A schematic diagram of a component misalignment arrangement provided by another embodiment of the present application is shown. If the target component includes a wafer assembly 20, a second misalignment distance L2 is provided between the central axis of the ion beam assembly 10 and the first rotation axis 31 corresponding to the wafer assembly 20. When the rotation assembly 30 drives the wafer assembly 20 to rotate about its corresponding first rotation axis 31, the ion beam projected onto the same area to be etched on the etched substrate 40 is emitted from a non-centrally symmetric position of the ion beam assembly 10, resulting in a change in the bombardment energy of the ion beam reaching the same area of the etched substrate 40, thereby improving the uniformity of the tilted grating structure formed by etching.

[0061] In some embodiments, the staggered arrangement of components in the ion beam etching device may also include, while there is a first staggered distance between the center of the etching substrate 40 and the first rotation axis 31 corresponding to the target component, there is a second staggered distance between the center axis of the ion beam component 10 and the first rotation axis 31 corresponding to the target component, which is not limited here.

[0062] In this embodiment, when the angle between the plane of the etched substrate 40 and the plane of the ion beam assembly 10 is set, the target assembly (at least one of the ion source 11, the grid 12, and the carrier assembly 20) is rotated about the first rotation axis 31 by the rotation assembly 30, so that the projection positions of the multiple ion beams emitted by the ion beam assembly 10 on the etched substrate 40 are changed. This can control the bombardment energy of the ion beams projected onto the same area of the etched substrate 40 during the rotation process to change, thereby improving the uniformity of the tilted grating structure formed by etching. In addition, by setting a first offset distance between the center of the etched substrate 40 and the first rotation axis 31 corresponding to the target assembly, and / or setting a second offset distance between the central axis of the ion beam assembly 10 and the first rotation axis 31 corresponding to the target assembly, it can be ensured that when the rotation assembly 30 drives the target assembly to rotate about its corresponding first rotation axis 31, the ion beams projected onto the same area to be etched on the etched substrate 40 are those emitted from a non-center-symmetric position of the ion beam assembly 10, thereby further improving the uniformity of the tilted grating structure formed by etching.

[0063] Please refer to Figure 10 , Figure 10 The schematic diagram of the structure of the ion beam etching device 2 provided in one embodiment of the present application is shown below. Figure 10 The ion beam etching device 2 provided in the embodiment of the present application is described in detail. Figure 10 As shown, the ion beam etching device 2 of this embodiment includes a housing 3 and the ion beam etching system 1 in the above embodiment.

[0064] In this embodiment, a vacuum etching chamber 4 is formed within the housing 3, and the vacuum etching chamber 4 is used to accommodate the ion beam etching system 1. In an environment where the vacuum is not interrupted, the ion beam etching system 1 can generate plasma based on the working gas filled in the vacuum etching chamber 4, using radio frequency electromagnetic waves or other methods under low pressure conditions, and then extract and accelerate the plasma in a beam-like manner to form an ion beam that is projected onto the surface of the etching substrate. Furthermore, the ion beam etching system 1 controls the relative rotation of the multiple ion beams and the etching substrate, so that the projection positions of the multiple ion beams emitted by the ion beam assembly 10 on the etching substrate change.

[0065] Based on this, the ion beam etching device 2 controls the relative rotation of multiple ion beams generated in the vacuum etching chamber 4 and the etching substrate, so that the bombardment energy of the ion beam projected onto the same area of the etching substrate changes during the rotation process, thereby improving the uniformity of the inclined grating structure formed by etching.

[0066] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. An ion beam etching system, characterized in that: The ion beam etching system comprises: an ion beam assembly, the ion beam assembly being configured to emit a plurality of ion beams; A wafer carrier assembly is arranged in the emission direction of the multiple ion beams, the wafer carrier assembly is used to carry an etching substrate, the etching substrate is used to be etched by the multiple ion beams to form an inclined grating structure, and the angle between the plane where the etching substrate is located and the plane where the ion beam assembly is located is a set angle; A rotating assembly is connected to a target assembly, and the rotating assembly is used to change the projection positions of the multiple ion beams on the etching substrate by driving the target assembly to rotate around a first rotating axis corresponding to the target assembly, so as to control different areas on the etching substrate to be etched by different ion beams at different times. The first rotating axis corresponding to the target assembly is parallel to the emission direction of the target ion beam. The target assembly includes the ion beam assembly and at least one of the carrier assembly, and the target ion beam includes at least one of the multiple ion beams.

2. The ion beam etching system according to claim 1, wherein: The rotating assembly is connected to the carrier assembly, and the rotating assembly is used to drive the carrier assembly to rotate around a second rotating axis so that the angle between the plane where the etching substrate is located and the plane where the ion beam assembly is located is the set angle, and the second rotating axis is perpendicular to the first rotating axis.

3. The ion beam etching system according to claim 1, wherein: There is a first offset distance between the center of the etching substrate and the first rotation axis corresponding to the target component, and the first offset distance is greater than 0 mm and less than 100 mm.

4. The ion beam etching system according to claim 1, wherein: A second offset distance is provided between the central axis of the ion beam assembly and the first rotation axis corresponding to the target assembly, and the second offset distance is greater than 0 mm and less than 100 mm.

5. The ion beam etching system according to claim 1, wherein: An included angle between the first rotation axis and an emission direction of any of the ion beams is greater than or equal to 0° and less than 5°.

6. The ion beam etching system according to any one of claims 1 to 5, characterized in that: The ion beam assembly includes an ion source and a grid; The ion source is used to emit plasma; The grid is arranged in the emission direction of the ion source, and is used to accelerate the plasma to form the multiple ion beams and emit the multiple ion beams. The plane where the grid is located is parallel to the plane where the ion source is located.

7. The ion beam etching system according to claim 6, wherein: The target component includes the ion beam component, the rotating component is connected to the sub-target component, the rotating component is used to drive the sub-target component to rotate around the first rotation axis corresponding to the sub-target component, and the sub-target component includes at least one of the ion source and the grid.

8. The ion beam etching system according to any one of claims 1 to 5, characterized in that: The etching substrate comprises a base layer, a layer to be etched and a mask layer; The base layer is arranged on a first side of the layer to be etched, and the base layer is used to support the layer to be etched; The mask layer is arranged on the second side of the layer to be etched. The mask layer is used to transmit the ion beam and project the transmitted ion beam onto the layer to be etched, so that the layer to be etched is etched by the transmitted ion beam to form the inclined grating structure.

9. An ion beam etching device, characterized in that: The ion beam etching device comprises a housing and the ion beam etching system according to any one of claims 1 to 8; A vacuum etching chamber is formed in the shell, and the vacuum etching chamber is used to accommodate the ion beam etching system.

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