Gas mixing device and semiconductor manufacturing equipment

Abstract

The utility model discloses a gas mixing device and semiconductor manufacturing equipment. The gas mixing device comprises a gas mixing pipeline, a first gas inlet pipeline and a gas outlet pipeline, the central axis of the gas mixing pipeline is a first central axis, a first gas inlet is formed in the side wall of the gas mixing pipeline, and a second gas inlet and a first gas outlet are formed in the areas of the two ends of the gas mixing pipeline; the first air inlet pipeline is connected to the first air inlet, the central axis of the first air inlet pipeline is a second central axis, and the second central axis and the first central axis are in different planes; one end of the air outlet pipeline is connected to the first air outlet, and the other end of the air outlet pipeline is provided with a second air outlet. According to the gas mixing device disclosed by the utility model, the gas inlet axis of the first gas inlet and the central axis of the gas mixing pipeline are arranged in different planes, gas from the first gas inlet forms spiral gas flow in the gas mixing pipeline, and the spiral gas flow is uniformly mixed with gas flow entering from the second gas inlet, so that the mixing uniformity of the gas from the first gas inlet and the second gas inlet is improved.

Description

Technical Field

[0001] The utility model relates to the field of semiconductor manufacturing equipment, in particular to a gas mixing device and semiconductor manufacturing equipment. Background Art

[0002] In semiconductor manufacturing, thin-film deposition technologies such as chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), and atomic layer deposition (ALD) are widely used in the manufacture of semiconductor devices. The core of these processes is to introduce pre-mixed reaction gases outside the reaction chamber into the reaction chamber under high temperature or plasma conditions, causing the reaction gases to undergo a chemical reaction inside the reaction chamber and form the desired thin film material on the wafer surface.

[0003] To achieve high-quality thin film deposition, it's necessary to control the composition, flow rate, and distribution uniformity of the reactant gases. During thin film deposition, reactant gases are typically supplied to the reaction chamber as a mixed gas. However, existing gas mixing devices struggle to ensure uniformity in the mixed gas. The concentrations of the various components of the mixed gas vary along the circumference of the device's outlet pipe, resulting in a skewed distribution of the components.

[0004] Uneven distribution of the gas mixture can lead to inconsistent film quality, such as thickness variations and uneven composition, which in turn affects the performance and yield of the final wafer. In addition, this unevenness can also cause over-deposition or under-deposition in certain areas of the wafer.

[0005] Therefore, a gas mixing device is needed to further improve the uniformity of the mixed gas. Utility Model Content

[0006] The utility model aims to provide a gas mixing device and semiconductor manufacturing equipment, which can evenly mix the gases from a first air intake line and a second air intake line, improve the uniformity of the gas mixture, and reduce the deviation caused by uneven mixing of different gases.

[0007] To achieve the above objectives, the present invention provides a gas mixing device comprising:

[0008] A gas mixing pipeline, the central axis of which is a first central axis, a first gas inlet is provided on a side wall of the gas mixing pipeline, and a second gas inlet and a first gas outlet are provided at both end regions of the gas mixing pipeline;

[0009] a first air intake pipeline connected to the first air intake port, wherein the central axis of the first air intake pipeline is a second central axis, and the second central axis is not aligned with the first central axis;

[0010] An air outlet pipeline, one end of which is connected to the first air outlet, and the other end of which is provided with a second air outlet.

[0011] Optionally, the gas mixing pipeline includes an annular pipeline and a cylindrical pipeline that are interconnected, and the annular pipeline and the cylindrical pipeline are coaxially connected along the first central axis.

[0012] Optionally, the first air inlet is opened on the annular pipeline.

[0013] Optionally, a busbar of the first air intake pipeline is tangent to the outer edge of the annular pipeline.

[0014] Optionally, the second air inlet is opened on the cylindrical pipeline.

[0015] Optionally, the first air inlet is opened at an end of the annular pipeline away from the cylindrical pipeline.

[0016] Optionally, the second air inlet is opened at an end of the cylindrical pipeline away from the annular pipeline.

[0017] Optionally, the first air outlet is provided at one end of the cylindrical pipeline, and the connecting surface between the cylindrical pipeline and the annular pipeline is a first annular surface, and the first annular surface surrounds the first air outlet.

[0018] Optionally, the annular pipeline is sleeved on the air outlet pipeline.

[0019] Optionally, the end of the first air intake pipeline close to the mixing air pipeline is a first air intake section, and the end of the first air intake pipeline away from the mixing air pipeline is a second air intake section, and the diameter of the first air intake section is smaller than the diameter of the second air intake section.

[0020] Optionally, the diameter of the first air inlet section is less than or equal to the difference between the inner and outer diameters of the annular pipeline.

[0021] Optionally, the first central axis and the second central axis are perpendicular and skewed.

[0022] The utility model also provides a semiconductor manufacturing device, comprising:

[0023] A reaction chamber, wherein the reaction chamber is provided with an air inlet pipe for supplying the counter gas;

[0024] As in the above-mentioned gas mixing device, the second gas outlet of the gas outlet pipeline of the gas mixing device is connected to the gas inlet pipeline of the reaction chamber.

[0025] In summary, compared with the prior art, the gas mixing device and semiconductor manufacturing equipment provided by the present invention have the following beneficial effects:

[0026] The gas mixing device of the present invention sets the intake axis of the first air inlet and the central axis of the mixing pipeline in different planes. The gas from the first air inlet forms a spiral airflow in the mixing pipeline and is evenly mixed with the airflow entering from the second air inlet, thereby improving the mixing uniformity of the gases from the first air inlet and the second air inlet. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a structural schematic diagram of the gas mixing device of the present utility model.

[0028] Figure 2 This is a structural diagram of the connection between the gas mixing device and the second air intake pipe of the utility model.

[0029] Figure 3 For the mixing device Figure 1 Cross-sectional view of section AA.

[0030] Figure 4 Schematic diagram of the first air intake section and the second air intake section of the first air intake pipeline.

[0031] Figure 5 This is a schematic diagram of the semiconductor manufacturing equipment of the present invention.

[0032] Description of Reference Numerals

[0033] Gas mixing device 10

[0034] Mixing line 110

[0035] Ring pipeline 111

[0036] Cylindrical pipeline 112

[0037] First central axis 113

[0038] Second air inlet 114

[0039] First air outlet 115

[0040] First annular surface 116

[0041] First air intake line 120

[0042] First air intake section 121

[0043] Second air intake section 122

[0044] Second central axis 123

[0045] Exhaust pipe 130

[0046] Second air outlet 131

[0047] Second intake pipe 190

[0048] Semiconductor manufacturing equipment 20

[0049] Reaction chamber 210

[0050] Intake duct 220

[0051] Gas supply device 230 DETAILED DESCRIPTION

[0052] The following will be combined with the appended examples in the embodiment of the present invention Figure 1 ~Attachment Figure 5 , the technical solutions, structural features, achieved objectives and effects in the embodiments of the present utility model are described in detail.

[0053] It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions. They are only used to conveniently and clearly assist in explaining the implementation methods of the present invention, and are not used to limit the conditions for the implementation of the present invention. Therefore, they have no substantive technical significance. Any structural modification, change in proportional relationship or adjustment of size should still fall within the scope of the technical content disclosed in the present invention without affecting the efficacy and purpose that can be achieved by the present invention.

[0054] It should be noted that, in the present invention, relational terms such as first and second, etc. are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or apparatus comprising a series of elements includes not only the elements explicitly listed, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or apparatus.

[0055] like Figure 1 As shown, the present invention provides a gas mixing device 10, comprising a gas mixing pipeline 110, a first air inlet pipeline 120 and an air outlet pipeline 130. In this embodiment, each pipeline can be formed by surrounding a rigid or soft material.

[0056] A first air inlet is provided on the side wall of the mixing pipeline 110, and a second air inlet 114 and a first air outlet 115 are provided at both end areas of the mixing pipeline 110. The mixing pipeline 110 is used to evenly mix the first gas from the first air inlet and the second gas from the second air inlet 114 to obtain a mixed gas, and discharge the mixed gas from the mixing pipeline 110 through the first air outlet 115.

[0057] like Figure 2As shown, in some embodiments, a second air intake pipe 190 may be connected to the outside of the second air intake port 114 , and the second air intake pipe 190 transports the second gas into the gas mixing pipeline 110 through the second air intake port 114 .

[0058] Continue as Figure 1 As shown, a first air inlet is provided on the side wall of the gas mixing pipeline 110 , and the first air inlet is connected to the first air inlet pipeline 120 . The first gas to be mixed flows into the gas mixing pipeline 110 through the first air inlet pipeline 120 .

[0059] like Figure 1 He Ru Figure 3 As shown, the central axis of the mixing pipe 110 is the first central axis 113, and the central axis of the first intake pipe 120 is the second central axis 123. The second central axis 123 is not in the same plane as the first central axis 113. The second central axis 123 and the first central axis 113 can be regarded as two straight lines in space. The fact that the second central axis 123 and the first central axis 113 are not in the same plane means that the second central axis 123 and the first central axis 113 are not in the same plane.

[0060] The first gas flowing into the mixing pipe 110 through the first intake pipe 120 can be considered as an airflow parallel to the second central axis 123. If the first central axis 113 and the second central axis 123 are arranged in different planes, the first gas can avoid the first central axis 113 after entering the mixing pipe 110. If the first central axis 113 and the second central axis 123 are arranged in the same plane, the first gas will move radially along the mixing pipe 110 after entering the mixing pipe 110, causing turbulent flow within the mixing pipe 110. This will result in a very chaotic flow of the first gas within the mixing pipe 110, hindering the formation of a smooth airflow and hindering mixing with the second gas.

[0061] The first central axis 113 and the second central axis 123 are arranged in different planes. The first gas flowing into the mixing pipe 110 will not flow directly to the first central axis 113 of the mixing pipe 110, but will flow in the mixing pipe 110 along the pipe wall of the first mixing pipe 110, and the first gas will form a spiral airflow along the pipe wall of the mixing pipe 110. The spiral airflow spirals upward along the axis direction of the mixing pipe 110 and mixes with the second gas. Compared with the situation where the first gas directly rushes to the first central axis 113 and cannot form a spiral airflow in the mixing pipe 110, such a setting can make the first gas and the second gas mix more evenly, and reduce the situation where the mixed gas flowing out of the outlet is deflected.

[0062] In a preferred embodiment, the first central axis 113 and the second central axis 123 are perpendicular and skewed, that is, the first central axis 113 and the second central axis 123 are located in different planes, and the projection of the first central axis 113 on the plane where the second central axis 123 resides is perpendicular to the second central axis 123. In other embodiments, the first central axis 113 and the second central axis 123 may also be arranged in different planes and not perpendicular to each other. When the first central axis 113 and the second central axis 123 are arranged skewed and perpendicular, the velocity of the spiral airflow formed by the first gas flowing along the axis of the gas mixing pipeline 110 can be more stable, thereby improving the uniformity of mixing with the second gas.

[0063] Continue as Figure 2 As shown, the gas mixing pipeline 110 includes an interconnected annular pipeline 111 and a cylindrical pipeline 112, which are coaxially connected along a first central axis 113. The cross-section of annular pipeline 111 is annular, meaning that the space defined by annular pipeline 111 is annular. The space defined by cylindrical pipeline 112 is cylindrical. A first air inlet is provided on annular pipeline 111. After the first gas flows into annular pipeline 111 through the first air inlet, a spiral airflow is formed within annular pipeline 111, gradually spiraling upward along the central axis of annular pipeline 111 to mix with the second gas.

[0064] In this embodiment, the first gas inlet is located at one end of the annular conduit 111 away from the cylindrical conduit 112. The first gas inlet is positioned as far away from the cylindrical conduit 112 as possible, and the height of the annular conduit 111 and the cylindrical conduit 112 is maximized to allow the first gas to form a stable spiral flow within the annular conduit 111 and the cylindrical conduit 112, thereby improving the uniformity of the mixing of the first gas and the second gas.

[0065] The second gas inlet 114 is provided on the cylindrical pipe 112. After the second gas enters the cylindrical pipe 112 through the second gas inlet 114, the second gas mixes with the first gas within the cylindrical pipe 112. The second gas inlet 114 is provided at the end of the cylindrical pipe 112 away from the annular pipe 111, allowing the first and second gases to fully mix by utilizing the space within the cylindrical pipe 112 as much as possible. This improves the uniformity of the mixing of the first and second gases and reduces the tendency of the outflowing mixed gas to deviate from the sides.

[0066] The first gas outlet 115 is arranged at one end of the cylindrical pipeline 112. Specifically, the first gas outlet 115 is arranged at the bottom center of the cylindrical pipeline 112. The cylindrical pipeline 112 is connected to the gas outlet pipeline 130 through the first gas outlet 115. That is, after the first gas and the second gas are mixed in the cylindrical pipeline 112 to form a mixed gas, they flow into the gas outlet pipeline 130 through the first gas outlet 115.

[0067] The connecting surface between cylindrical conduit 112 and annular conduit 111 is a first annular surface 116, which surrounds first gas outlet 115. The outer diameter of annular conduit 111 is the same as that of cylindrical conduit 112, and the inner diameter of annular conduit 111 is larger than the inner diameter of gas outlet conduit 130. Annular conduit 111 and gas outlet conduit 130 are connected at the same horizontal plane of cylindrical conduit 112, with the bottom of gas outlet conduit 130 lower than the bottom of annular conduit 111. After the first gas is introduced into annular conduit 111 via first inlet conduit 120, it forms a spiral airflow along the inner wall of annular conduit 111. This spiral airflow moves upward along the axis of annular conduit 111. After entering cylindrical conduit 112, the spiral airflow continues to move upward until it mixes with the second gas to form a mixed gas.

[0068] Within cylindrical conduit 112, an upward spiral airflow consistently exists near the tube wall of cylindrical conduit 112. Consequently, the mixed gas flows downward from the center of cylindrical conduit 112 until it passes through first gas outlet 115 and flows into outlet conduit 130. This arrangement eliminates the need for a partition within cylindrical conduit 112 to achieve the zoned flow of the spiral airflow of the first gas and the mixed gas, simplifying the structural design of cylindrical conduit 112 and reducing the manufacturing cost of cylindrical conduit 112. The naturally zoned flow of the spiral airflow formed by the first gas and the mixed gas achieves uniform mixing of the first and second gases, while effectively utilizing the space within cylindrical conduit 112.

[0069] One end of outlet pipe 130 is connected to first outlet 115, and the other end of outlet pipe 130 is provided with second outlet 131. After the first gas and the second gas are mixed in mixing pipe 110 to form a mixed gas, the mixed gas is discharged from mixing pipe 110 through first outlet 115 and then flows into outlet pipe 130. The mixed gas flows along the axis of outlet pipe 130 in outlet pipe 130 until it flows out of outlet pipe 130 through second outlet 131.

[0070] The air outlet pipe 130 is a cylindrical pipe, and one end of the air outlet pipe 130 connected to the first air outlet 115 is arranged inside the annular pipe section of the mixing pipe 110, that is, the annular pipe 111 is sleeved on the air outlet pipe 130. Such an arrangement can reduce the overall height of the mixing device 10 while ensuring the uniformity of the mixing gas.

[0071] In a preferred embodiment, a generatrix of the first air inlet conduit 120 is tangent to the outer edge of the annular conduit 111, where the generatrix refers to a straight line segment on the wall of the first air inlet conduit 120 that is parallel to the central axis of the first air inlet conduit 120. This arrangement allows the first gas to flow along the sidewall of the annular conduit 111 as much as possible after entering the annular conduit 111 through the first air inlet conduit 120, thereby helping to form a stable spiral airflow.

[0072] like Figure 4 As shown, the end of the first air intake conduit 120 close to the air mixing conduit 110 is a first air intake section 121, and the end of the first air intake conduit 120 away from the air mixing conduit 110 is a second air intake section 122. The diameter of the first air intake section 121 is smaller than the diameter of the second air intake section 122. After the first gas in the second air intake section 122 flows along the axis into the first air intake section 121, because the diameter of the first air intake section 121 is smaller than the diameter of the second air intake section 122, the flow velocity of the first gas after flowing from the second air intake section 122 into the first air intake section 121 is increased, and the airflow is more concentrated, which helps the first gas form a spiral airflow after entering the annular conduit 111.

[0073] In a preferred embodiment, the diameter of the first air inlet section 121 is less than or equal to the difference between the inner and outer diameters of the annular pipe 111. With this arrangement, the gas entering the annular pipe 111 from the first air inlet section 121 can flow along the outer wall of the annular pipe 111 to form a spiral airflow, and will not collide with the inner wall of the annular pipe 111, causing the inner wall of the annular pipe 111 to affect the flow of the first gas in the annular pipe 111, resulting in the inability to generate a stable spiral airflow.

[0074] In addition, in addition to the form of the mixing device 10 connected by a tube body as mentioned in the above embodiment, in other embodiments, the mixing device can also be a hollow pipe processed from a solid material or directly cast, that is, the pipes for the flow of various gases are hollow pipes dug out from a whole piece of solid material, which is not limited here.

[0075] like Figure 5 As shown, the present invention further provides a semiconductor manufacturing device 20 , comprising a reaction chamber 210 , a gas supply device 230 and the above-mentioned gas mixing device 10 .

[0076] The gas supply device 230 is used to supply reaction gas into the reaction chamber 210. The reaction chamber 210 is provided with an air inlet pipe 220 for supplying reaction gas.

[0077] The second gas outlet 131 of the gas outlet pipeline 130 of the gas mixing device 10 is connected to the gas inlet pipeline 220 of the reaction chamber 210. The first gas flows into the gas mixing pipeline 110 through the first gas inlet pipeline 120, and the second gas flows into the gas mixing pipeline 110 through the second gas inlet pipe 190. The first gas and the second gas are mixed in the gas mixing pipeline 110 to form a mixed gas, and then flow into the gas outlet pipeline 130. After further mixing in the gas outlet pipeline 130, they flow into the gas supply device 230 through the gas inlet pipeline 220 on the reaction chamber 210, and flow into the reaction chamber 210 evenly on the plane through the gas supply device 230 to process the wafer surface in the reaction chamber 210.

[0078] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. After reading the above description, various modifications and alternatives to the present invention will be readily apparent to those skilled in the art. Therefore, the scope of protection of the present invention shall be defined by the appended claims.

Claims

1. A gas mixing device, characterized in that: The gas mixing device comprises: A gas mixing pipeline, the central axis of which is a first central axis, a first gas inlet is provided on a side wall of the gas mixing pipeline, and a second gas inlet and a first gas outlet are provided at both end regions of the gas mixing pipeline; a first air intake pipeline connected to the first air intake port, wherein the central axis of the first air intake pipeline is a second central axis, and the second central axis is not aligned with the first central axis; An air outlet pipeline, one end of which is connected to the first air outlet, and the other end of which is provided with a second air outlet.

2. The gas mixing device according to claim 1, characterized in that The gas mixing pipeline includes an annular pipeline and a cylindrical pipeline that are interconnected, and the annular pipeline and the cylindrical pipeline are coaxially connected along the first central axis.

3. The gas mixing device according to claim 2, characterized in that: The first air inlet is opened on the annular pipeline.

4. The gas mixing device according to claim 3, characterized in that A generatrix of the first air intake pipeline is tangent to the outer edge of the annular pipeline.

5. The gas mixing device according to claim 2 or 3, characterized in that: The second air inlet is opened on the cylindrical pipeline.

6. The gas mixing device according to claim 3, characterized in that: The first air inlet is opened at one end of the annular pipeline away from the cylindrical pipeline.

7. The gas mixing device according to claim 6, characterized in that The second air inlet is opened at one end of the cylindrical pipeline away from the annular pipeline.

8. The gas mixing device according to claim 2, wherein: The first air outlet is provided at one end of the cylindrical pipeline. The connecting surface between the cylindrical pipeline and the annular pipeline is a first annular surface. The first annular surface surrounds the first air outlet.

9. The gas mixing device according to claim 8, characterized in that: The annular pipeline is sleeved on the air outlet pipeline.

10. The gas mixing device according to claim 2, wherein: The end of the first air intake pipeline close to the mixing pipeline is a first air intake section, and the end of the first air intake pipeline away from the mixing pipeline is a second air intake section. The diameter of the first air intake section is smaller than the diameter of the second air intake section.

11. The gas mixing device according to claim 10, characterized in that: The diameter of the first air inlet section is smaller than or equal to the difference between the inner and outer diameters of the annular pipeline.

12. The gas mixing device according to claim 1, wherein: The first central axis and the second central axis are perpendicular and skewed.

13. A semiconductor manufacturing equipment, characterized in that: The semiconductor manufacturing equipment includes: A reaction chamber, wherein the reaction chamber is provided with an air inlet pipe for supplying the counter gas; The gas mixing device according to any one of claims 1 to 12, wherein the second gas outlet of the gas outlet pipeline of the gas mixing device is connected to the gas inlet pipeline of the reaction chamber.

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