Detection device

Abstract

The utility model discloses a detection device. The detection device comprises a rotating piece and a sampling unit, the detection device is used for measuring metal pollution in the single crystal furnace, the single crystal furnace comprises a furnace body, an auxiliary chamber is arranged at the upper end in the furnace body, a rotating piece is arranged at the top in the auxiliary chamber and at least partially rotatable, the rotating piece is provided with an air cavity, an inlet and an outlet, the inlet and the outlet are communicated with the air cavity, and the inlet is formed in the rotating part of the rotating piece and is separated from the rotating axis of the rotating piece; the sampling unit is located outside the furnace body and provided with a sampling pipe, one end of the sampling pipe extends into the upper end of the auxiliary chamber and communicates with the outlet, and the sampling unit is used for extracting sampling gas from the outlet and detecting the metal concentration of the sampling gas. According to the detection device disclosed by the utility model, gas in different directions in the single crystal furnace can be sampled by the detection device so as to measure metal pollution, the accuracy and the reliability are high, and the purity and the yield of monocrystalline silicon in the furnace can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of single crystal silicon manufacturing, in particular to a detection device. Background Art

[0002] In related technologies, the secondary chambers of single crystal furnaces can be contaminated by metal materials during manufacturing and use, and the inert gas within the furnace can also contain trace amounts of metal vapor or compounds. Consequently, during the growth of single crystal silicon within the furnace, the furnace maintains a high temperature for extended periods. As the growth cycle continues, these metal contaminants can dissolve into the molten silicon at high temperatures, severely impacting the purity and quality of the single crystal. If this condition is not prevented in a timely manner, it can lead to inefficient single crystal silicon production. Utility Model Content

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides a detection device that can sample gases at different locations within a single crystal furnace to measure metal contamination with high accuracy and reliability, thereby improving the purity and yield of single crystal silicon within the furnace.

[0004] According to an embodiment of the present invention, a detection device comprises a rotating member and a sampling unit. The detection device is used to measure metal contamination in a single crystal furnace. The single crystal furnace comprises a furnace body, the upper end of which is provided with a secondary chamber. The rotating member is disposed at the top of the secondary chamber and is at least partially rotatable. The rotating member has an air cavity and an inlet and an outlet connected to the air cavity. The inlet is disposed on the rotating portion of the rotating member and is spaced from the rotation axis of the rotating member. The sampling unit is located outside the furnace body and comprises a sampling tube. One end of the sampling tube extends into the upper end of the secondary chamber and is connected to the outlet. The sampling unit is used to extract a sample gas from the outlet and detect the metal concentration of the sample gas.

[0005] According to the detection device of the embodiment of the present invention, by arranging a rotating member with an air cavity at the top of the auxiliary chamber, and arranging an inlet and an outlet connected to the air cavity on the rotating member, and making the sampling tube of the sampling unit arranged outside the furnace body connected to the outlet, it is possible to sample the gas in the furnace body, and detect and quantitatively analyze the metal concentration of the gas in the furnace body, so as to determine whether the single crystal furnace is contaminated by metal. It is convenient to timely discover potential pollution sources in the single crystal furnace and take measures to prevent and control them, which is conducive to improving the purity and quality of single crystal silicon, and can also effectively improve the yield and production efficiency of single crystal silicon. In addition, at least a portion of the rotating member is rotatable, and the inlet is arranged on the rotating part of the rotating member and is spaced from the rotation axis of the rotating member, so that gas at different positions in the furnace body can be sampled, thereby improving the accuracy and reliability of the detection device in detecting metal contamination in the single crystal furnace, and facilitating the determination of the location and range of local pollution sources in the furnace body, which is conducive to taking targeted measures to control and eliminate them, and can further improve the purity and yield of single crystal silicon.

[0006] According to some embodiments of the present invention, the rotating member includes: a fixed disk and a rotating disk, the fixed disk is fixed at the top of the auxiliary chamber, and the outlet is provided at the top of the fixed disk; the rotating disk is located below the fixed disk and is rotatably connected to the fixed disk, the air cavity is defined between the fixed disk and the rotating disk, and the inlet is provided at the bottom of the rotating disk.

[0007] According to some embodiments of the present invention, a seed crystal shaft is connected to the top of the sub-chamber, a weight is connected to the bottom of the seed crystal shaft, and the rotation center of the rotating member has a channel for the seed crystal shaft to pass through, and the channel is separated from the air cavity.

[0008] In some embodiments of the present invention, the detection device also includes an extension tube, which includes a tube body. The tube body extends in the up and down directions, the upper end of the tube body is detachably connected to the inlet, and the lower end of the tube body extends to the bottom of the sub-chamber.

[0009] In some embodiments of the present invention, the extension tube also includes an extension tube, which extends in a horizontal direction and has one end connected to the lower end of the tube body, and the other end extends in a direction away from the rotation axis of the rotating member and is spaced apart from the side wall of the auxiliary chamber.

[0010] In some embodiments of the present invention, the furnace body further comprises a main chamber, the main chamber being located below the auxiliary chamber, and the main chamber being provided with: a water-cooling screen, the water-cooling screen being formed in an annular shape and being adapted to move in an up-down direction; a draft tube, the draft tube being arranged around the water-cooling screen, and at least a portion of the draft tube being located below the water-cooling screen; and a bottom heater, the bottom heater being arranged at the bottom of the auxiliary chamber, and the bottom heater and the draft tube being spaced apart in an up-down direction.

[0011] The detection device also includes: a connecting pipe, the upper end of which is detachably connected to the inlet; a cooling unit, which is used to cool the sampled gas, and the cooling unit has a condenser, the upper end of which is detachably connected to the lower end of the connecting pipe, and the lower end of the condenser is detachably connected to the upper end of the tube body, wherein the length of the connecting pipe is adjustable in the up and down directions so that the tube body can move between a first position and a second position, in the first position, the lower end of the tube body is opposite to the top of the water-cooled screen in the up and down directions, and in the second position, the lower end of the tube body is spaced between the bottom heater and the guide tube in the up and down directions.

[0012] In some embodiments of the present invention, the cooling unit includes: an outer shell, the outer shell defines a cooling chamber, the upper end of the outer shell is provided with a water inlet connected to the cooling chamber, the lower end of the outer shell is provided with a water outlet connected to the cooling chamber, the condenser is passed through the cooling chamber, the condenser extends spirally in the up and down directions in the cooling chamber, and the spiral winding diameter of the condenser gradually increases from bottom to top.

[0013] In some embodiments of the present invention, the lower end of the condenser tube has a bending portion, and the bending portion is convex and bent toward the horizontal direction.

[0014] In some embodiments of the present invention, the detection device further includes: a first swing arm clamp, which is arranged between the tube body and the weight; and a second swing arm clamp, which is arranged between the cooling unit and the seed crystal axis.

[0015] According to some embodiments of the present invention, the sampling unit includes: an air washing tank and a liquid collecting tank, the air washing tank is arranged outside the furnace body, the air washing tank has an air washing cavity and an exhaust port and an air inlet connected to the air washing cavity, the end of the sampling tube facing away from the sub-chamber is connected to the air inlet, the air washing cavity is used to accommodate the air washing liquid, and the bottom wall of the air washing tank also has a liquid outlet connected to the air washing cavity; the liquid collecting tank is located below the air washing tank and has a liquid inlet connected to the liquid outlet above it.

[0016] In some embodiments of the present invention, the air inlet and the exhaust port are provided on the top wall of the air washing pool, the sampling tube extends into the bottom of the air washing chamber through the air inlet, the air washing chamber has a plurality of grilles arranged at intervals along the up and down directions, for dividing the air washing chamber into a plurality of sub-cavities spaced apart along the up and down directions, the sampling tube extends into the sub-cavity of the lowest layer, and the plurality of grilles have avoidance holes for the sampling tube to pass through and air outlets connecting two adjacent sub-cavities, and the air outlets on the two adjacent grilles are respectively located on both sides of the length direction of the air washing pool.

[0017] Additional aspects and advantages of the present invention will be given in part in the following description and will become apparent from the following description or learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0019] Figure 1 is a schematic diagram of a detection device according to an embodiment of the present invention, wherein the detection device samples gas at the top of the secondary chamber;

[0020] Figure 2 is a schematic diagram of a detection device according to an embodiment of the present invention, wherein the detection device samples gas at the bottom of the secondary chamber;

[0021] Figure 3 is a schematic diagram of a detection device according to an embodiment of the present invention, wherein the detection device samples the gas at a water-cooling screen and a position below the water-cooling screen;

[0022] Figure 4 is a cross-sectional view of a rotating member of a detection device according to an embodiment of the present utility model;

[0023] Figure 5 is a top view of a rotating member of a detection device according to an embodiment of the present utility model;

[0024] Figure 6 is a top view of the second swing arm clamp of the detection device according to an embodiment of the present utility model;

[0025] Figure 7 is a top view of a first swing arm clamp of a detection device according to an embodiment of the present utility model;

[0026] Figure 8 is a cross-sectional view of a cooling unit of a detection device according to an embodiment of the present utility model;

[0027] Figure 9 is a top view of the first grid of the detection device according to an embodiment of the present utility model;

[0028] Figure 10 It is a top view of the second grid of the detection device according to an embodiment of the present utility model.

[0029] Reference numerals:

[0030] 100. Detection device;

[0031] 1. Rotating member; 11. Fixed disk; 111. Outlet; 12. Rotating disk; 121. Inlet; 13. Air cavity; 14. Channel;

[0032] 2. Sampling unit; 21. Sampling tube; 22. Extension tube; 221. Tube body; 222. Extension tube; 231. Second swing arm clamp; 2311. First hole; 2312. Second hole; 232. First swing arm clamp; 2321. Third hole; 2322. Fourth hole; 233. First clamp body; 234. Second clamp body; 235. Bolt hole; 24. Gas scrubber; 241. Gas scrubber cavity; 242. Sub-cavity; 243. Exhaust port; 244. Air inlet; 245. Liquid outlet; 25. Grille; 251. Avoidance hole; 252. Air outlet; 253. Grille No. 1; 254. Grille No. 2; 26. Liquid collecting tank; 261. Liquid inlet;

[0033] 3. Cooling unit; 31. Condenser; 311. Bend; 32. Housing; 321. Water inlet; 322. Water outlet; 323. Cooling chamber;

[0034] 4. Connecting pipe;

[0035] 51. Check valve; 52. Control valve; 53. Vacuum pump; 54. Pressure detection device; 55. Flow meter; 56. Scrubber liquid; 57. Coolant; 58. Stop valve;

[0036] 6. Single crystal furnace; 61. Furnace body; 62. Sub-chamber; 621. Air inlet; 63. Seed crystal axis; 64. Heavy hammer; 65. Water cooling screen; 66. Guide tube; 67. Main chamber; 68. Bottom heater. DETAILED DESCRIPTION

[0037] The following describes embodiments of the present invention in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present invention and are not to be construed as limiting the present invention.

[0038] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, features defined as "first" or "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0039] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0040] Reference below Figures 1-10 A detection device 100 according to an embodiment of the present invention is described.

[0041] like Figure 1 、 Figure 2 and Figure 3 As shown, the detection device 100 according to an embodiment of the present invention includes a rotating member 1 and a sampling unit 2 .

[0042] Specifically, such as Figure 1-Figure 5 As shown, the detection device 100 is used to measure metal contamination within a single crystal furnace 6. The single crystal furnace 6 includes a furnace body 61, and a sub-chamber 62 is provided at the upper end of the furnace body 61. The sub-chamber 62 extends in the vertical direction, and an air inlet 621 is provided at the top of the sub-chamber 62. The air inlet 621 is used to introduce an inert gas, such as argon, into the furnace body 61. This prevents oxidation of the single crystal silicon within the furnace body 61 at high temperatures, thereby ensuring the purity and quality of the single crystal silicon. The detection device 100 can sample the inert gas within the furnace body 61, thereby detecting the metal concentration of the inert gas within the furnace body 61, thereby achieving the purpose of measuring metal contamination within the single crystal furnace 6.

[0043] Furthermore, the rotating member 1 is disposed at the top of the auxiliary chamber 62 and is at least partially rotatable. The rotating member 1 has an air cavity 13, an inlet 121, and an outlet 111 connected to the air cavity 13. The inlet 121 is disposed on the rotating portion of the rotating member 1 and is spaced apart from the rotation axis of the rotating member 1. The sampling unit 2 is located outside the furnace body 61 and includes a sampling tube 21. One end of the sampling tube 21 extends into the upper end of the auxiliary chamber 62 and connects to the outlet 111. The sampling unit 2 is used to extract a sample gas from the outlet 111 and detect the metal concentration of the sample gas.

[0044] It is understood that the air cavity 13 within the rotating member 1 communicates with the space within the furnace body 61 via the inlet 121. The sampling tube 21 is disposed at the top of the auxiliary chamber 62 and communicates with the air cavity 13 via the outlet 111. As a result, the gas within the furnace body 61 can enter the air cavity 13 through the inlet 121 and then enter the sampling tube 21 through the outlet 111, thereby achieving the purpose of sampling the gas within the furnace body 61. After collecting the gas within the furnace body 61, the sampling unit 2 then detects and quantitatively analyzes the metal concentration in the collected gas sample, thereby obtaining the metal concentration of the environment within the single crystal furnace 6 and determining whether the single crystal silicon growth environment is contaminated by metals.

[0045] The rotating member 1 is disposed at the top of the auxiliary chamber 62 and is at least partially rotatable, thereby changing the position of the inlet 121 in the circumferential direction of the auxiliary chamber 62, thereby detecting the metal concentration at different circumferential positions.

[0046] By setting up the detection device 100, the metal concentration of the gas in the furnace body 61 can be sampled and detected regularly or irregularly, so as to timely discover potential pollution sources in the single crystal furnace 6 and take measures to prevent and control them, so as to prevent metal impurities from having an adverse effect on the growth of single crystal silicon, thereby helping to improve the purity and quality of single crystal silicon, and can also effectively improve the yield and production efficiency of single crystal silicon.

[0047] At least a portion of the rotating member 1 is rotatable, and the inlet 121 is disposed on the rotating portion of the rotating member 1 and spaced apart from the rotational axis of the rotating member 1. Thus, when the rotating portion of the rotating member 1 rotates, the inlet 121 is driven to rotate about the rotational axis of the rotating member 1, thereby enabling sampling of gas at different locations within the furnace body 61. Forced convection or natural convection within the furnace body 61 can cause differences in gas composition at different locations. By sampling gas at different locations within the furnace body 61, the effects of these differences can be avoided, thereby improving the accuracy and reliability of the detection device 100 in detecting metal contamination within the single crystal furnace 6.

[0048] In addition, in some cases, there may be local pollution sources in the single crystal furnace 6, causing the metal concentration in local areas of the furnace body 61 to exceed the standard. By sampling the gas at different positions in the furnace body 61 by the rotating part 1, the position and range of the local pollution source in the furnace body 61 can be determined more accurately, which is conducive to taking targeted measures to control and eliminate it, so as to ensure that single crystal silicon can grow with high quality in a stable, pure and precisely controlled environment.

[0049] According to the detection device 100 of the embodiment of the present invention, by disposing a rotating member 1 having an air cavity 13 at the top of the auxiliary chamber 62, and disposing an inlet 121 and an outlet 111 on the rotating member 1 that are connected to the air cavity 13, and making the sampling tube 21 of the sampling unit 2 disposed outside the furnace body 61 connected to the outlet 111, it is possible to sample the gas in the furnace body 61 and detect and quantitatively analyze the metal concentration of the gas in the furnace body 61, thereby determining whether the single crystal furnace 6 is contaminated by metal. This facilitates the timely discovery of potential sources of contamination in the single crystal furnace 6 and the implementation of preventive and control measures, thereby improving the purity and quality of single crystal silicon and effectively improving the yield rate and production efficiency of single crystal silicon. In addition, at least part of the rotating part 1 is rotatable, and the inlet 121 is provided on the rotating part of the rotating part 1 and is spaced apart from the rotation axis of the rotating part 1, thereby being able to sample gases at different positions in the furnace body 61, thereby being able to improve the accuracy and reliability of the detection device 100 in detecting metal contamination in the single crystal furnace 6, and also facilitating the determination of the position and range of local pollution sources in the furnace body 61, thereby being conducive to taking targeted measures for control and elimination, and being able to further improve the purity and yield of single crystal silicon.

[0050] In some embodiments of the present invention, Figure 1-Figure 5 As shown, the rotating member 1 includes: a fixed disk 11 and a rotating disk 12. The fixed disk 11 is fixedly mounted at the top of the auxiliary chamber 62, and the outlet 111 is located at the top of the fixed disk 11. The rotating disk 12 is located below the fixed disk 11 and is rotatably connected to the fixed disk 11. The fixed disk 11 and the rotating disk 12 define an air cavity 13 between them, and the inlet 121 is located at the bottom of the rotating disk 12. By configuring the rotating member 1 with the fixed disk 11 located above and fixed, and the rotating disk 12 located below and rotatable relative to the fixed disk 11, it is easy to realize that the inlet 121 rotates around the rotation axis of the rotating member 1 under the drive of the rotating disk 12, thereby enabling the sampling of gases at different positions within the furnace body 61. At the same time, the position of the outlet 111 connected to the sampling tube 21 can be guaranteed to remain fixed, and the connection stability of the fixed disk 11 and the sampling tube 21 can be guaranteed, thereby ensuring the structural stability of the detection device 100 and the functionality of the sampled gas. The structural design is simple and the layout is reasonable.

[0051] Among them, the fixed disk 11 is fixedly arranged at the top of the auxiliary chamber 62, the rotating disk 12 is located below the fixed disk 11 and the inlet 121 is arranged at the bottom of the rotating disk 12, so that the gas at the air inlet end of the furnace body 61, that is, the top of the auxiliary chamber 62, can be extracted through the rotating part 1 and the sampling unit 2, and the air inlet end of the furnace body 61 can be sampled and tested to determine whether the air inlet end of the furnace body 61, that is, the top of the auxiliary chamber 62, is contaminated by metal.

[0052] In some embodiments of the present invention, Figure 4 As shown, the rotating disk 12 and the fixed disk 11 are threadedly connected, which not only ensures the stability of the connection between the rotating disk 12 and the fixed disk 11, thereby ensuring the stability of the defined air cavity 13, but also allows the rotating disk 12 to rotate relative to the fixed disk 11, thereby driving the position of the inlet 121 to change to sample gas from different directions within the furnace body 61. The structure is simple, easy to implement, and low in cost. In addition, the rotating disk 12 and the fixed disk 11 can be detachably connected, which facilitates the assembly and disassembly of the rotating member 1 and facilitates subsequent inspection and maintenance.

[0053] Specifically, the upper end of the rotating disk 12 can be provided with an external thread, and the lower end of the fixed disk 11 can be provided with an internal thread matching the external thread on the rotating disk 12, so that the upper end of the rotating disk 12 can be screwed into the lower end of the fixed disk 11, thereby ensuring the stable connection between the rotating disk 12 and the fixed disk 11 while realizing that the rotating disk 12 can rotate relative to the fixed disk 11.

[0054] In some embodiments of the present invention, Figure 1-Figure 5 As shown, a seed shaft 63 is connected to the top of the auxiliary chamber 62, and a weight 64 is connected to the bottom of the seed shaft 63. The rotation center of the rotating member 1 has a channel 14 for the seed shaft 63 to pass through, wherein the channel 14 is separated from the air cavity 13. The seed shaft 63 can drive the seed crystal to move up and down and rotate within the single crystal furnace 6, thereby growing high-quality single crystal silicon on the seed crystal. By providing a channel 14 for the seed shaft 63 to pass through in the center of the rotating member 1, the seed shaft 63 can avoid interference with the rotating member 1 during the process of moving up and down or rotating, thereby improving the reliability and stability of the movement of the seed shaft 63.

[0055] In some embodiments of the present invention, Figure 2As shown, the detection device 100 further includes an extension tube 22, which includes a tube body 221. The tube body 221 extends in the vertical direction, the upper end of the tube body 221 is detachably connected to the inlet 121, and the lower end of the tube body 221 extends to the bottom of the auxiliary chamber 62. Because the rotating member 1 is disposed at the top of the auxiliary chamber 62, the inlet 121 can only extract gas from the top of the auxiliary chamber 62. Therefore, by detachably connecting the tube body 221 at the inlet 121, the inlet 121 can be connected to the bottom space of the auxiliary chamber 62. Therefore, with the cooperation of the extension tube 22, the rotating member 1, and the sampling unit 2, the gas at the bottom of the auxiliary chamber 62 can be extracted, and the bottom of the auxiliary chamber 62 can be sampled and tested, thereby determining whether the bottom of the auxiliary chamber 62 is contaminated by metal.

[0056] Furthermore, by adjusting the length of the tube body 221, the portion of the lower end of the tube body 221 extending into the auxiliary chamber 62 can be adjusted. Therefore, with the cooperation of the extension tube 22, the rotating member 1, and the sampling unit 2, gas at different heights within the auxiliary chamber 62 can be extracted and sampled for testing at different heights within the auxiliary chamber 62, thereby determining whether different heights within the auxiliary chamber 62 are contaminated by metals. The location and range of local contamination sources within the furnace body 61 can be determined more accurately, facilitating the implementation of targeted measures to control and eliminate them, thereby ensuring high-quality growth of single crystal silicon in a stable, pure, and precisely controlled environment, thereby improving the purity and yield of single crystal silicon.

[0057] In some embodiments of the present invention, Figure 2 As shown, the extension tube 22 further includes an extension tube 222, which extends horizontally and has one end connected to the lower end of the tube body 221, and the other end extending away from the rotation axis of the rotating member 1 and spaced from the side wall of the auxiliary chamber 62. Thus, when the rotating portion of the rotating member 1 rotates, it can drive the inlet 121 to rotate about the rotation axis of the rotating member 1, thereby driving the extension tube 22 to rotate, causing the extension direction of the extension tube 222 to change, thereby enabling sampling of gas at different locations within the auxiliary chamber 62. Forced convection or natural convection within the auxiliary chamber 62 can cause differences in gas composition at different locations. By sampling gas at different locations within the auxiliary chamber 62, the effects of these differences can be avoided, thereby improving the accuracy and reliability of the detection device 100 in detecting metal contamination within the single crystal furnace 6.

[0058] In addition, in some cases, there may be local pollution sources in the single crystal furnace 6, causing the metal concentration in the local area of the auxiliary chamber 62 to exceed the standard. Through the cooperation of the rotating part 1 and the extension tube 22, the gas at different heights and directions in the furnace body 61 can be sampled, and the position and range of the local pollution source in the auxiliary chamber 62 can be determined more accurately, which is conducive to taking targeted measures to control and eliminate it, so as to ensure that the single crystal silicon can grow with high quality in a stable, pure and precisely controlled environment, further improving the purity and yield of the single crystal silicon.

[0059] In some embodiments of the present invention, Figure 2 、 Figure 6 and Figure 7 As shown, the furnace body 61 also has a main chamber 67, which is located at the lower side of the sub-chamber. The main chamber 67 is provided with: a water-cooled screen 65, a guide tube 66 and a bottom heater 68. The water-cooled screen 65 is formed in a ring shape and is suitable for moving in the up and down directions. The guide tube 66 is arranged around the water-cooled screen, and at least part of the guide tube 66 is located at the lower side of the water-cooled screen 65. The bottom heater 68 is arranged at the bottom of the main chamber 67, and the bottom heater 68 and the guide tube 66 are spaced apart in the up and down directions.

[0060] It is understandable that the water-cooling shield 65 is formed in a ring shape and is suitable for moving in the up and down directions. Water cooling technology can be used to absorb the heat generated in the main chamber 67 (while cooling the crystal rod), thereby improving the temperature distribution in the main chamber 67. It helps to reduce the temperature gradient in the main chamber 67 and make the temperature environment more stable during the growth of single crystal silicon. The guide tube 66 arranged around the water-cooling shield 65 can guide the flow path of the protective gas (such as argon and other inert gases) in the single crystal furnace 6, and blow away the pollutant gases (such as oxygen, SiO, etc.) generated during the crystal growth process to ensure the growth quality of single crystal silicon. The bottom heater 68 is used to maintain the high temperature environment at the bottom of the melt, improve the uniformity of the melt temperature distribution, and ensure the growth quality of single crystal silicon.

[0061] Furthermore, the detection device 100 also includes a cooling unit 3 and a connecting tube 4. The cooling unit 3 is used to cool the sampled gas. The cooling unit 3 has a condenser tube 31. The upper end of the condenser tube 31 is detachably connected to the lower end of the connecting tube 4. The upper end of the tube body 221 is detachably connected to the lower end of the condenser tube 31. The connecting tube 4 is adjustable in length in the vertical direction to allow the tube body 221 to move between a first position and a second position. In the first position, the lower end of the tube body 221 is adapted to extend vertically to face the top end of the water-cooled shield 65. In the second position, the lower end of the tube body 221 is spaced between the bottom heater 68 and the guide tube 66 in the vertical direction.

[0062] It can be understood that the connected tube body 221, condenser 31 and connecting tube 4 enable the inlet 121 to be connected to the main chamber 67, so that with the cooperation of the extension tube 22, condenser 31, connecting tube 4, rotating part 1 and sampling unit 2, the gas in the main chamber 67 can be extracted, and the space near the water-cooled screen 65 can be sampled and tested, so as to determine whether the space near the water-cooled screen 65 below the sub-chamber 62 is contaminated by metal.

[0063] Furthermore, by selecting a tube body 221 of an appropriate length, the portion of the furnace body 61 below the auxiliary chamber 62 to which the lower end of the tube body 221 extends can be adjusted. Therefore, with the cooperation of the extension tube 22, the condenser tube 31, the rotating member 1, and the sampling unit 2, gas at different heights in the space near the water-cooling screen 65 below the auxiliary chamber 62 can be extracted, and sampling tests can be performed at different heights within the furnace body 61 to determine whether different heights within the furnace body 61 are contaminated by metals. The location and range of local contamination sources within the furnace body 61 can be determined more accurately, which facilitates the adoption of targeted measures to control and eliminate them, ensuring that single crystal silicon can grow with high quality in a stable, pure, and precisely controlled environment, thereby improving the purity and yield of single crystal silicon.

[0064] Among them, the furnace body 61 below the auxiliary chamber 62 is usually maintained in a high temperature state. The cooling unit 3 can cool the high-temperature gas extracted from the space near the water-cooling screen 65 below the auxiliary chamber 62, thereby preventing the excessively high temperature gas in the furnace body 61 from damaging the detection device 100, thereby extending the service life of the detection device 100.

[0065] In the present application, by adjusting the length of the connecting tube 4, the height of the position at which the lower end of the tube body 221 extends to the space of the main chamber 67 can be freely adjusted. The tube body 221 moves between the first position and the second position, and can extract gas at different height positions from the top of the water-cooling screen 65 to the space between the bottom heater 68 and the guide tube 66. Sampling and testing are performed at different height positions in the main chamber 67, thereby determining whether different height positions in the main chamber 67 (such as the pollution situation at the water-cooling screen 65 position, the pollution situation at the guide tube 66 position, and the pollution situation near the bottom heater 68) are contaminated by metal. The operation is simple and easy to implement. The location and range of local pollution sources in the main chamber 67 can be determined more accurately, which is conducive to taking targeted measures to control and eliminate them, so as to ensure that single crystal silicon can grow with high quality in a stable, pure and precisely controlled environment, thereby improving the purity and yield of single crystal silicon.

[0066] In some embodiments of the present invention, Figure 2 、 Figure 6 and Figure 7As shown, the cooling unit 3 includes a housing 32, which defines a cooling chamber 323. A water inlet 321 communicating with the cooling chamber 323 is provided at the upper end of the housing 32, and a water outlet 322 communicating with the cooling chamber 323 is provided at the lower end of the housing 32. The condenser tube 31 extends through the cooling chamber 323. Coolant 57 flows through the cooling chamber 323. The coolant 57 contacts the outer wall of the condenser tube 31 extending through the cooling chamber 323, removing heat from the condenser tube 31 and thereby cooling the high-temperature gas within the condenser tube 31. This prevents the overheated gas within the furnace body 61 from damaging the detection device 100 and extends the service life of the detection device 100. Furthermore, metal particles entrained by the high-temperature gas within the condenser tube 31 will solidify within the condenser tube 31 due to the lowered temperature, enabling sampling of the metals contained in the furnace gas.

[0067] Specifically, the water inlet 321 and the water outlet 322 can be connected to a hose to facilitate the introduction of water or other coolant 57 into and out of the cooling chamber 323. The water inlet 321 is connected to a flow valve, which can control the amount of liquid entering the cooling chamber 323, thereby actively controlling the cooling amount of the cooling unit 3, such as controlling the flow rate of the coolant 57 entering the cooling chamber 323 to 1L / min-3L / min.

[0068] In some embodiments of the present invention, Figure 2 、 Figure 6 and Figure 7 As shown, the condenser tube 31 spirally extends in the cooling chamber 323 in an up-and-down direction. The diameter of the spiral winding of the condenser tube 31 gradually increases from bottom to top. This spiral extension of the condenser tube 31 effectively increases its length, thereby increasing the flow path and condensation time of the sampled gas within the condenser tube 31, thereby enhancing the condensation effect of the sampled gas. As the temperature within the furnace body 61 gradually decreases from bottom to top, the temperature of the coolant 57 within the condenser tube 31 gradually decreases. This causes the diameter of the spiral winding of the condenser tube 31 to gradually increase, allowing the sampled gas to flow along a longer path and for a longer time within the condenser tube 31, where the coolant 57 temperature is lower, thereby further enhancing the condensation effect of the sampled gas. Furthermore, because the heat exchange length per unit height of the condenser tube 31 gradually increases from bottom to top, the sampled gas can be slowly cooled as it flows through the condenser tube 31, preventing the condenser tube 31 from bursting due to a sudden drop in temperature.

[0069] In some embodiments of the present invention, Figure 2 、 Figure 6 and Figure 7As shown, the lower end of the condenser 31 has a bend 311, and the bend 311 is convex and bent in the horizontal direction. The metal particles entrained by the high-temperature gas in the condenser 31 will solidify and adhere to the inner surface of the condenser 31 due to the temperature drop. The bend 311 can prevent the condensed solid particles from falling out of the condenser 31 into the furnace body 61, causing further contamination of the furnace body 61 and other components. In addition, the solid particles condensed into the condenser 31 will need to be recovered and placed in the sampling unit 2 for detection. If the solid particles fall directly from the condenser 31, it will also cause errors in the sampling and measurement results of the detection device 100, thereby improving the accuracy and reliability of the detection device 100 in detecting metal contamination in the single crystal furnace 6.

[0070] In some embodiments of the present invention, Figure 3 As shown, the connecting pipe 4 is a bellows. The bellows is retractable, which facilitates adjustment of the length of the connecting pipe 4, is simple to operate and has low cost.

[0071] In some embodiments of the present invention, Figure 2 、 Figure 6 and Figure 7 As shown, the detection device 100 further includes a first swing arm clamp 232 and a second swing arm clamp 231. The first swing arm clamp 232 and the second swing arm clamp 231 are spaced apart along the axial direction of the secondary chamber. The first swing arm clamp 232 is clamped between the tube body 221 and the weight 64, and the second swing arm clamp 231 is clamped between the cooling unit 3 and the seed crystal shaft 63, and is used to cause the tube body 221 and the cooling unit 3 to rotate synchronously with the seed crystal shaft 63. The first swing arm clamp 232 and the second swing arm clamp 231 can serve as a fixing and transmission function. When the operator controls the seed crystal shaft 63 to rotate, the seed crystal shaft 63 drives the weight 64 to rotate, causing the first swing arm clamp 232 and the second swing arm clamp 231 to rotate about the rotation axis of the seed crystal shaft 63, thereby driving the tube body 221 and the cooling unit 3 to rotate, thereby enabling gas sampling at different circumferential positions in the main chamber 67. The structure is simple and the design is reasonable, which is convenient for the operator to operate.

[0072] The first swing arm clamp 232 and the second swing arm clamp 231 can enhance the connection stability, thereby improving the stability of the driving tube body 221 to rotate, and can disperse the force acting on the tube body 221 and the cooling unit 3, thereby reducing the risk of damage to the tube body 221 and the cooling unit 3.

[0073] like Figure 3 、 Figure 6 and Figure 7In the example shown, the second swing arm clamp 231 is provided with a first hole 2311 and a second hole 2312, and the first swing arm clamp 232 is provided with a third hole 2321 and a fourth hole 2322. The apertures of the first hole 2311 and the third hole 2321 are the same, and the aperture of the fourth hole 2322 is larger than that of the second hole 2312. The cooling unit 3 is passed through the first hole 2311, the tube body 221 is passed through the third hole 2321, the seed crystal shaft 63 is passed through the second hole 2312, and the weight 64 is passed through the fourth hole 2322, thereby achieving fixing and transmission effects, and the structure is simple and easy to implement.

[0074] In some embodiments of the present invention, Figure 2 、 Figure 6 and Figure 7 As shown, the first swing arm clamp 232 and the second swing arm clamp 231 are each provided with a first clamp body 233 and a second clamp body 234. The first clamp body 233 and the second clamp body 234 are connected by fasteners, and the tube body 221 and the seed crystal shaft 63 are both clamped between the first clamp body 233 and the second clamp body 234. The first clamp body 233 and the second clamp body 234 are respectively provided at the radial ends of the tube body 221 or the seed crystal shaft 63, and then the first clamp body 233 and the second clamp body 234 are fixedly connected by fasteners, so that the tube body 221 and the seed crystal shaft 63 and other components can be tightly clamped between the first clamp body 233 and the second clamp body 234, thereby ensuring the stability of the connection between the first swing arm clamp 232 and the second swing arm clamp 231 and other components.

[0075] Among them, the first swing arm clamp 232 and the second swing arm clamp 231 are both provided with bolt holes 235, and the bolt holes 235 pass through the first clamp body 233 and part of the second clamp body 234, and the bolt holes 235 on the first clamp body 233 are opposite to the bolt holes 235 on the second clamp body 234, so that bolts and other fasteners can be screwed into the bolt holes 235 to achieve the clamping force between the first clamp body 233 and the second clamp body 234. The structure is simple and easy to implement.

[0076] In some embodiments of the present invention, Figure 1 、 Figure 2 and Figure 3 As shown, the sampling unit 2 includes a gas washing pool 24 and a liquid collecting pool 26. The gas washing pool 24 is arranged outside the furnace body 61. The gas washing pool 24 has a gas washing chamber 241 and an exhaust port 243 and an air inlet 244 connected to the gas washing chamber 241. The end of the sampling tube 21 facing away from the auxiliary chamber 62 is connected to the air inlet 244. The gas washing chamber 241 is used to accommodate the gas washing liquid 56. The bottom wall of the gas washing pool 24 also has a liquid outlet 245 connected to the gas washing chamber 241. The liquid collecting pool 26 is located below the gas washing pool 24 and has a liquid inlet 261 above it that is connected to the liquid outlet 245. Furthermore, the air inlet 244 and the exhaust port 243 are arranged on the top wall of the gas washing pool 24, and the sampling tube 21 extends into the bottom of the gas washing chamber 241 through the air inlet 244.

[0077] It is understandable that the gas washing tank 24 and the liquid collecting tank 26 are used to sample the metals contained in the extracted furnace gas so as to facilitate subsequent metal concentration detection and metal quantitative analysis.

[0078] When sampling, the liquid outlet 245 is first closed, so that the sampling unit 2 samples a predetermined volume of gas in the furnace body 61. The end of the sampling tube 21 facing away from the auxiliary chamber 62 extends from the air inlet 244 to a position near the bottom of the washing liquid 56 in the washing chamber 241. As a result, the sample gas in the sampling tube 21 can enter the washing liquid 56 and float from the bottom of the washing liquid 56 to the top of the washing liquid 56 under the action of gravity. During this process, the metal particles carried by the sample gas are precipitated in the washing liquid 56 or react with the washing liquid 56. Then the sample gas is discharged from the exhaust port 243 located on the top wall of the washing tank 24. After a predetermined volume of sampling gas is discharged from the exhaust port 243, the liquid outlet 245 is opened to allow the metal-containing washing liquid 56 in the washing tank 24 to enter the liquid collecting tank 26, and then the washing tank 24 is flushed with a predetermined volume of new washing liquid 56. The flushed washing liquid 56 is also collected in the liquid collecting tank 26 through the liquid inlet 261, thereby completing the sampling of the metal contained in the sampling gas.

[0079] A predetermined volume of scrubbing liquid 56 is then sampled from the liquid collection tank 26 and tested using ICP-MS (Inductively Coupled Plasma Mass Spectrometry) to perform metal analysis and obtain the metal concentration of the scrubbing liquid 56. The metal concentration of the sampled gas is then calculated and compared with the upper limit metal concentration, thereby determining whether the single crystal silicon growth environment is contaminated by metals.

[0080] For example, when sampling, the liquid outlet 245 is first closed, so that the sampling unit 2 samples a predetermined volume V1 of gas in the furnace body 61, and the scrubbing pool 24 has a volume V2 of scrubbing liquid 56, which is a dilute hydrochloric acid solution with a concentration of 1-2 mol / L. After the sample gas in the sampling tube 21 enters the bottom of the washing liquid 56, it floats from the bottom of the washing liquid 56 to the top of the washing liquid 56 due to the action of gravity. After the predetermined volume V1 of the sampling gas is discharged from the exhaust port 243, the liquid outlet 245 is opened to allow the washing liquid 56 with a volume V2 containing metal in the washing pool 24 to enter the collecting pool 26, and then the washing pool 24 is flushed with new washing liquid 56 with a volume V3. The flushed washing liquid 56 also enters the collecting pool 26 through the liquid inlet 261. At this time, a total volume of washing liquid 56 of V2+V3 is collected in the collecting pool 26, thereby completing the sampling of the metal contained in the sampling gas with a volume of V1.

[0081] Then, a sample volume V0 of the scrubbing liquid 56 in the liquid collection tank 26 is sent to the ICP-MS for metal analysis to obtain the metal concentration of the scrubbing liquid 56 as X1. Then, the metal concentration of the sampled gas is calculated to be H1 = X1 * (V2 + V3) / V1. The upper limit concentration of metals specified for general product silicon wafers is ρ = 5E 10 atoms / cm3, then H1 < ρ should be satisfied. If H1 ≥ ρ, it can be determined that the single crystal silicon growth environment is highly contaminated by metals, which will cause the metal content in the product to exceed the standard.

[0082] In some embodiments, as Figure 1 、 Figure 2 and Figure 3 As shown, a stop valve 58 is provided between the liquid outlet 245 and the liquid inlet 261 to facilitate controlling the opening and closing of the liquid outlet 245 and the liquid inlet 261 .

[0083] In some embodiments of the present invention, Figure 1 、 Figure 2 and Figure 3 As shown, the scrubbing chamber 241 has multiple grids 25 spaced apart in the vertical direction, which are used to divide the scrubbing chamber 241 into multiple sub-cavities 242 spaced apart in the vertical direction. The sampling tube 21 extends into the bottommost sub-cavity 242. The multiple grids 25 have avoidance holes 251 for the sampling tube 21 to pass through, as well as gas outlets 252 that connect two adjacent sub-cavities 242. The avoidance holes 251 on the multiple grids 25 are opposed to each other, facilitating the sampling tube 21 to pass through the multiple grids 25 and allowing the bottom end of the sampling tube 21 to extend into the bottommost sub-cavity 242, thereby allowing the sample gas in the sampling tube 21 to enter the bottom area of the scrubbing liquid 56. Under the action of gravity, the sample gas floats layer by layer from the washing liquid 56 in the bottom sub-chamber 242 through the gas outlet 252 to the washing liquid 56 in the top sub-chamber 242. During this process, the metal particles carried by the sample gas are precipitated in the washing liquid 56 or react with the washing liquid 56, thereby improving the washing effect of the washing liquid 56 on the sample gas to ensure the sampling quality of the metal in the sample gas.

[0084] In some embodiments of the present invention, Figure 1-Figure 3 、 Figure 9 and Figure 10 As shown, the gas outlets 252 on two adjacent grids 25 are located on either side of the length of the scrubbing tank 24. This allows the sample liquid to rise in the scrubbing liquid 56 in an S-shaped pattern, increasing the flow path and flow time of the sample liquid in the scrubbing liquid 56. This allows metal particles carried by the sample gas to fully settle or react with the scrubbing liquid 56, thereby further enhancing the scrubbing effect of the scrubbing liquid 56 on the sample gas and improving the sampling quality of metals in the sample gas.

[0085] Specifically, the grille 25 can be divided into grille No. 1 253 and grille No. 2 254. The avoidance holes 251 on grille No. 1 253 and grille No. 2 254 are opposite to each other. The air inlet 244 of grille No. 1 253 is located at the end of grille No. 1 253 in the length direction away from the avoidance hole 251, and the air inlet 244 of grille No. 2 254 is located at the end of grille No. 2 254 in the length direction close to the avoidance hole 251. In the up and down direction, grille No. 1 253 and grille No. 2 254 are spaced and alternately arranged in the air washing chamber 241.

[0086] In some embodiments of the present invention, Figure 1 、 Figure 2 and Figure 3 As shown, the sampling tube 21 is provided with a one-way valve 51 and a control valve 52. Both the one-way valve 51 and the control valve 52 are located outside the furnace body 61 and outside the scrubbing pool 24. The one-way valve 51 is located on the side of the control valve 52 away from the secondary chamber 62. The one-way valve 51 only allows gas to flow from the control valve 52 side to the one-way valve 51 side. The sampling unit 2 also includes a vacuum pump 53, which is connected to the sampling tube 21 and is located between the one-way valve 51 and the control valve 52. The vacuum pump 53 can provide power for extracting gas from the furnace body 61, the control valve 52 can control the opening and closing of the sampling tube 21, and the one-way valve 51 can prevent the sampling gas and the scrubbing liquid 56 from flowing back and being sucked back, thereby ensuring the flow direction of the fluid in the sampling tube 21.

[0087] During the sampling process, when the pressure P1 required for crystal growth is reached within furnace body 61 and the inert gas flow rate at the inlet end of auxiliary chamber 62 reaches L, vacuum pump 53 is turned on, causing the pressure P2 between the one-way valve 51 and the control valve 52 in sampling tube 21 to continuously decrease. Pressure P1 is 15-100 mbar, and the flow rate L is 50-200 L / min. When P2 is less than P1, a pressure differential is generated across control valve 52. At this point, control valve 52 is opened, and the gas within furnace body 61 enters sampling tube 21 under the action of the pressure differential. Under the control of one-way valve 51, it flows into gas scrubber 24, thereby enabling sampling of the gas within furnace body 61.

[0088] In some embodiments of the present invention, Figure 1 、 Figure 2 and Figure 3As shown, the sampling unit 2 also includes a pressure detection device 54, which is installed on the sampling tube 21 and located between the one-way valve 51 and the control valve 52. The pressure detection device 54 can monitor the pressure between the one-way valve 51 and the control valve 52 in real time, facilitating operation by the operator. When the vacuum pump 53 is turned on and the pressure P2 between the one-way valve 51 and the control valve 52 in the sampling tube 21 is lower than the pressure P1 in the furnace body 61, the control valve 52 can be opened promptly to prevent the pressure P2 between the one-way valve 51 and the control valve 52 from being too low, which could damage the sampling tube 21. For example, the control valve 52 is opened when the pressure P2 detected by the pressure detection device 54 satisfies P2 = P1 - 10 mbar.

[0089] In some embodiments of the present invention, Figure 1 、 Figure 2 and Figure 3 As shown, the sampling tube 21 is also provided with a flow meter 55, which is located outside the furnace body 61 and on the side of the control valve 52 facing away from the one-way valve 51. The flow meter 55 can monitor the gas flow rate of the gas extracted from the furnace body 61 through the sampling tube 21 in real time, thereby facilitating the calculation of the specific volume of the sampled gas and the subsequent calculation of the metal concentration in the sampled gas.

[0090] For example, in a specific sampling process, when the gas in the furnace body 61 starts to be extracted, the timing is T0, and after a period of extraction, when the gas in the furnace body 61 is finished being extracted, the timing is T1. Thus, the gas volume V1 of the T1-T0 time period can be calculated based on the data of the flow meter 55, wherein the time for extracting the sample gas can be controlled within the range of 4-24h.

[0091] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the illustrative use of the above terms does not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0092] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and purpose of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A detection device, characterized in that: Used for measuring metal contamination in a single crystal furnace, the single crystal furnace includes a furnace body, the upper end of the furnace body has a sub-chamber, the detection device includes: a rotating member disposed at a top portion of the secondary chamber and at least partially rotatable, the rotating member having an air cavity and an inlet and an outlet communicating with the air cavity, the inlet being disposed on a rotating portion of the rotating member and spaced apart from a rotation axis of the rotating member; A sampling unit is located outside the furnace body and has a sampling tube. One end of the sampling tube extends into the upper end of the auxiliary chamber and is connected to the outlet. The sampling unit is used to extract sampling gas from the outlet and detect the metal concentration of the sampling gas.

2. The detection device according to claim 1, characterized in that The rotating member comprises: a fixed disk, the fixed disk being fixedly mounted on the top of the auxiliary chamber, and the outlet being disposed on the top of the fixed disk; A rotating disk is located below the fixed disk and is rotatably connected to the fixed disk. The air cavity is defined between the fixed disk and the rotating disk. The inlet is located at the bottom of the rotating disk.

3. The detection device according to claim 1, characterized in that The top of the auxiliary chamber is connected to a seed crystal shaft, the bottom of the seed crystal shaft is connected to a heavy hammer, and the rotation center of the rotating member has a channel for the seed crystal shaft to pass through, and the channel is separated from the air cavity.

4. The detection device according to claim 3, characterized in that The detection device also includes: The extension tube includes a tube body, the tube body extends in an up-down direction, the upper end of the tube body is detachably connected to the inlet, and the lower end of the tube body extends to the bottom of the sub-chamber.

5. The detection device according to claim 4, characterized in that The extension pipe further includes an extension pipe extending in a horizontal direction and having one end connected to the lower end of the pipe body and the other end extending in a direction away from the rotation axis of the rotating member and spaced apart from the side wall of the auxiliary chamber.

6. The detection device according to claim 4, characterized in that The furnace body further comprises a main chamber, which is located below the auxiliary chamber and contains: A water-cooling screen, wherein the water-cooling screen is formed in a ring shape and is suitable for moving in an up-down direction; A guide tube, the guide tube is arranged around the water-cooling screen, and at least a portion of the guide tube is located on the lower side of the water-cooling screen; A bottom heater, the bottom heater is arranged at the bottom of the main chamber, and the bottom heater and the guide tube are spaced apart in the vertical direction; The detection device also includes: a connecting pipe, the upper end of which is detachably connected to the inlet; A cooling unit, the cooling unit is used to cool the sampled gas, the cooling unit has a condenser, the upper end of the condenser is detachably connected to the lower end of the connecting tube, and the lower end of the condenser is detachably connected to the upper end of the tube body, wherein, The length of the connecting pipe is adjustable in the up-down direction so that the pipe body can move between a first position and a second position. In the first position, the lower end of the pipe body is opposite to the top of the water-cooled screen in the up-down direction. In the second position, the lower end of the pipe body is spaced between the bottom heater and the guide tube in the up-down direction.

7. The detection device according to claim 6, characterized in that The cooling unit comprises: The shell defines a cooling chamber, the upper end of the shell is provided with a water inlet connected to the cooling chamber, the lower end of the shell is provided with a water outlet connected to the cooling chamber, the condenser is passed through the cooling chamber, the condenser extends spirally in the cooling chamber along the up and down directions, and the spiral winding diameter of the condenser gradually increases from bottom to top.

8. The detection device according to claim 6, characterized in that The lower end of the condensing tube has a bending portion, and the bending portion is convex and bent toward the horizontal direction.

9. The detection device according to claim 6, characterized in that: The detection device also includes: a first swing arm clamp, the first swing arm clamp being disposed between the pipe body and the weight; A second swing arm clamp is disposed between the cooling unit and the seed crystal shaft.

10. The detection device according to claim 1, characterized in that: The sampling unit comprises: A gas washing pool, the gas washing pool is arranged outside the furnace body, the gas washing pool has a gas washing cavity and an exhaust port and an air inlet connected to the gas washing cavity, the end of the sampling tube facing away from the secondary chamber is connected to the air inlet, the gas washing cavity is used to accommodate the gas washing liquid, and the bottom wall of the gas washing pool also has a liquid outlet connected to the gas washing cavity; A liquid collecting pool is located below the gas washing pool and has a liquid inlet on the upper side that is connected to the liquid outlet.

11. The detection device according to claim 10, characterized in that: The air inlet and the exhaust port are arranged on the top wall of the air washing pool, and the sampling tube extends into the bottom of the air washing chamber through the air inlet. The air washing chamber is provided with a plurality of grilles arranged at intervals along the up and down directions, which are used to divide the air washing chamber into a plurality of sub-cavities spaced apart along the up and down directions. The sampling tube extends into the sub-cavity of the lowest layer, and the plurality of grilles are provided with avoidance holes for the sampling tube to pass through and air outlets connecting two adjacent sub-cavities. The air outlets on two adjacent grilles are respectively located on both sides of the length direction of the air washing pool.

Images