Detection device

Abstract

The utility model discloses a detection device. The detection device comprises a seed crystal shaft and a sampling unit, the detection device is used for measuring metal pollution in the single crystal furnace, the single crystal furnace comprises a furnace body, an auxiliary chamber is arranged at the upper end in the furnace body, a seed crystal shaft extends in the vertical direction and can move in the vertical direction relative to the auxiliary chamber, the seed crystal shaft is suitable for rotating around the central axis of the auxiliary chamber, and an air pipe extending in the vertical direction is arranged in the seed crystal shaft in a penetrating mode; the sampling unit is located outside the furnace body and provided with a sampling pipe, one end of the sampling pipe is connected with the upper end of the gas pipe, and the sampling unit is used for extracting sampling gas from the gas pipe and detecting the metal concentration of the sampling gas. According to the detection device disclosed by the utility model, gas at different heights in the single crystal furnace can be sampled by the detection device so as to measure metal pollution, the accuracy and the reliability are high, and the purity and the yield of single crystal silicon in the furnace can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of single crystal silicon manufacturing, in particular to a detection device. Background Art

[0002] In related technologies, the secondary chambers of single crystal furnaces can be contaminated by metal materials during manufacturing and use, and the inert gas within the furnace can also contain trace amounts of metal vapor or compounds. Consequently, during the growth of single crystal silicon within the furnace, the furnace maintains a high temperature for extended periods. As the growth cycle continues, these metal contaminants can dissolve into the molten silicon at high temperatures, severely impacting the purity and quality of the single crystal. If this condition is not prevented in a timely manner, it can lead to inefficient single crystal silicon production. Utility Model Content

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention provides a detection device that can sample gas at different heights within a single crystal furnace to measure metal contamination with high accuracy and reliability, thereby improving the purity and yield of single crystal silicon within the furnace.

[0004] According to an embodiment of the present invention, a detection device comprises: a seed crystal shaft and a sampling unit. The detection device is used to measure metal contamination in a single crystal furnace, wherein the single crystal furnace comprises a furnace body, wherein the upper end of the furnace body comprises a sub-chamber, wherein the seed crystal shaft extends in a vertical direction and is movable in a vertical direction relative to the sub-chamber, and wherein the seed crystal shaft is adapted to rotate about the central axis of the sub-chamber, and wherein an air pipe extending in a vertical direction is provided through the seed crystal shaft; wherein the sampling unit is located outside the furnace body, wherein the sampling unit comprises a sampling tube, wherein one end of the sampling tube is connected to the upper end of the air pipe, and wherein the sampling unit is configured to extract a sample gas from the air pipe and detect the metal concentration of the sample gas.

[0005] According to the detection device of the embodiment of the present invention, by arranging a seed crystal shaft extending in the vertical direction at the top of the auxiliary chamber and a gas pipe extending in the vertical direction through the seed crystal shaft, and at the same time making the sampling tube of the sampling unit arranged outside the furnace body connected to the gas pipe, it is possible to sample the gas in the furnace body, and detect and quantitatively analyze the metal concentration of the gas in the furnace body, so as to determine whether the single crystal furnace is contaminated by metal. It is convenient to timely discover potential pollution sources in the single crystal furnace and take measures to prevent and control them, which is conducive to improving the purity and quality of single crystal silicon, and can also effectively improve the yield and production efficiency of single crystal silicon. In addition, the seed crystal shaft can move in the vertical direction relative to the auxiliary chamber, thereby sampling the gas at different height positions in the furnace body, thereby improving the accuracy and reliability of the detection device in detecting metal contamination in the single crystal furnace, and also facilitating the determination of the location and range of local pollution sources in the furnace body, which is conducive to taking targeted measures to control and eliminate them, and can further improve the purity and yield of single crystal silicon.

[0006] According to some embodiments of the present invention, the detection device also includes an intake pipe, which includes a first pipe section and a second pipe section, the first pipe section extends in the up-down direction and the upper end is detachably connected to the lower end of the trachea, the second pipe section extends in the horizontal direction and one end is connected to the lower end of the first pipe section, and the other end is spaced apart from the inner side wall of the secondary chamber.

[0007] According to some embodiments of the present invention, the detection device also includes an adjusting tube and a connecting tube, the lower end of the adjusting tube is connected to one end of the sampling tube, and the length of the adjusting tube is adjustable in the up and down directions; one end of the connecting tube is connected to the upper end of the adjusting tube, and the other end is connected to the upper end of the air pipe, and the lower end of the seed crystal axis is height-adjustable between the top and bottom of the sub-chamber.

[0008] In some embodiments of the present invention, the furnace body further comprises a main chamber, the main chamber being located at the lower side of the auxiliary chamber, the main chamber being provided with: a water-cooled screen, a guide tube and a bottom heater, the water-cooled screen being formed in a ring shape and being adapted to move in the up and down directions; the guide tube being arranged around the water-cooled screen, and at least a portion of the guide tube being located at the lower side of the water-cooled screen; the bottom heater being arranged at the bottom of the auxiliary chamber, and the bottom heater and the guide tube being spaced apart in the up and down directions; the detection device further comprising a cooling unit and an extension pipe, the cooling unit being used to cool the water-cooled screen; The sampling gas, the cooling unit is arranged in the furnace body and has a condenser, the upper end of the condenser is detachably connected to the lower end of the gas pipe; the extension tube includes a tube body, the tube body extends in the up and down directions, the upper end of the tube body is connected to the lower end of the condenser, the seed crystal axis is suitable for moving up and down between a first position and a second position, in the first position, along the up and down direction, the lower end of the tube body is opposite to the top of the water-cooled screen, in the second position, along the up and down direction, the lower end of the tube body is spaced between the bottom heater and the guide tube.

[0009] In some embodiments of the present invention, the extension tube further includes an extension tube, which extends in a horizontal direction and has one end connected to the lower end of the tube body and the other end spaced apart from the side wall of the water-cooling screen.

[0010] In some embodiments of the present invention, the cooling unit includes a shell, which defines a cooling chamber, the upper end of the shell is provided with a water inlet connected to the cooling chamber, the lower end of the shell is provided with a water outlet connected to the cooling chamber, and the condenser is arranged in the cooling chamber.

[0011] In some embodiments of the present invention, a water inlet channel and a water outlet channel extending in the up and down directions are provided on the seed crystal axis, the water inlet end of the water inlet channel is connected to an inlet pipe, the water outlet end of the water inlet channel is connected to the water inlet, the water inlet end of the water outlet channel is connected to the water outlet, and the water outlet end of the water outlet channel is connected to the outlet pipe.

[0012] In some embodiments of the present invention, the condenser tube extends spirally in the up and down directions within the shell, and the spiral diameter of the condenser tube gradually increases from bottom to top. The lower end of the condenser tube has a bending portion, and the bending portion protrudes and bends toward the horizontal direction.

[0013] According to some embodiments of the present invention, the sampling unit includes an air washing tank and a liquid collecting tank. The air washing tank is arranged outside the furnace body. The air washing tank has an air washing cavity and an exhaust port and an air inlet connected to the air washing cavity. The end of the sampling tube facing away from the secondary chamber is connected to the air inlet. The air washing cavity is used to accommodate the air washing liquid. The bottom wall of the air washing tank also has a liquid outlet connected to the air washing cavity. The liquid collecting tank is located below the air washing tank and has a liquid inlet connected to the liquid outlet above it.

[0014] In some embodiments of the present invention, the air inlet and the exhaust port are provided on the top wall of the air washing pool, the sampling tube extends into the bottom of the air washing chamber through the air inlet, the air washing chamber has a plurality of grilles arranged at intervals along the up and down directions, for dividing the air washing chamber into a plurality of sub-cavities spaced apart along the up and down directions, the sampling tube extends into the sub-cavity of the lowest layer, and the plurality of grilles have avoidance holes for the sampling tube to pass through and air outlets connecting two adjacent sub-cavities, and the air outlets on the two adjacent grilles are respectively located on both sides of the length direction of the air washing pool.

[0015] Additional aspects and advantages of the present invention will be given in part in the following description and will become apparent from the following description or learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0017] Figure 1 is a schematic diagram of a detection device according to an embodiment of the present invention, wherein the detection device samples gas at the top of the secondary chamber;

[0018] Figure 2 is a schematic diagram of a detection device according to an embodiment of the present invention, wherein the detection device samples gas at the bottom of the secondary chamber;

[0019] Figure 3 is a schematic diagram of a detection device according to an embodiment of the present invention, wherein the detection device samples the gas at a water-cooling screen and a position below the water-cooling screen;

[0020] Figure 4 is a cross-sectional view of a seed crystal axis of a detection device according to an embodiment of the present utility model;

[0021] Figure 5 is a cross-sectional view of a cooling unit of a detection device according to an embodiment of the present utility model;

[0022] Figure 6 is a top view of the first grid of the detection device according to an embodiment of the present utility model;

[0023] Figure 7 is a top view of the second grid of the detection device according to an embodiment of the present utility model;

[0024] Figure 8 This is a front view of the air intake pipe of the detection device according to an embodiment of the present utility model.

[0025] Reference numerals:

[0026] 100. Detection device;

[0027] 1. Seed crystal axis; 11. Air pipe; 12. Water inlet channel; 13. Water outlet channel;

[0028] 2. Sampling unit; 21. Sampling tube; 22. Adjusting tube; 23. Connecting tube; 24. Air washing tank; 241. Air washing chamber; 242. Sub-chamber; 243. Exhaust port; 244. Air inlet; 245. Liquid outlet; 25. Grille; 251. Avoidance hole; 252. Air outlet; 253. Grille No. 1; 254. Grille No. 2; 26. Liquid collecting tank; 261. Liquid inlet;

[0029] 3. Cooling unit; 31. Condenser; 311. Bend; 32. Housing; 321. Water inlet; 322. Water outlet; 323. Cooling chamber;

[0030] 41. Intake pipe; 411. First pipe section; 412. Second pipe section; 42. Extension pipe; 421. Pipe body; 422. Extension pipe;

[0031] 51. Check valve; 52. Control valve; 53. Vacuum pump; 54. Pressure detection device; 55. Flow meter; 56. Scrubber liquid; 57. Coolant; 58. Stop valve;

[0032] 6. Single crystal furnace; 61. Furnace body; 62. Sub-chamber; 621. Air inlet; 63. Water cooling screen; 64. Draft tube; 65. Main chamber; 66. Bottom heater. DETAILED DESCRIPTION

[0033] The following describes embodiments of the present invention in detail. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present invention and are not to be construed as limiting the present invention.

[0034] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, features defined as "first" or "second" may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0035] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0036] Reference below Figures 1-8 A detection device 100 according to an embodiment of the present invention is described.

[0037] like Figure 1 、 Figure 2 and Figure 3 As shown, the detection device 100 according to an embodiment of the present invention includes a seed shaft 1 and a sampling unit 2 .

[0038] Specifically, such as Figures 1-4 As shown, the detection device 100 is used to measure metal contamination within a single crystal furnace 6. The single crystal furnace 6 includes a furnace body 61, and a sub-chamber 62 is provided at the upper end of the furnace body 61. The sub-chamber 62 extends in the vertical direction, and the top wall of the sub-chamber 62 is provided with an air inlet 621. The air inlet 621 is used to introduce an inert gas, such as argon, into the furnace body 61. This prevents oxidation of the single crystal silicon within the furnace body 61 at high temperatures, thereby ensuring the purity and quality of the single crystal silicon. The detection device 100 can sample the inert gas within the furnace body 61, thereby detecting the metal concentration of the inert gas within the furnace body 61, thereby achieving the purpose of measuring metal contamination within the single crystal furnace 6.

[0039] Furthermore, the seed crystal shaft 1 extends in the up-down direction and can move in the up-down direction relative to the auxiliary chamber 62, and the seed crystal shaft 1 is suitable for rotating around the central axis of the auxiliary chamber 62. An air pipe 11 extending in the up-down direction is passed through the seed crystal shaft 1. The sampling unit 2 is located outside the furnace body 61. The sampling unit 2 has a sampling tube 21. One end of the sampling tube 21 is connected to the upper end of the air pipe 11. The sampling unit 2 is used to extract sampling gas from the air pipe 11 and detect the metal concentration of the sampling gas.

[0040] It is understandable that the lower end of the gas pipe 11 is connected to the interior of the furnace body 61, and the upper end of the gas pipe 11 extends to the outside of the furnace body 61 and is connected to the sampling tube 21, so that the gas in the furnace body 61 can enter the sampling tube 21 through the gas pipe 11, thereby achieving the purpose of sampling the gas in the furnace body 61. After collecting the gas in the furnace body 61, the metal concentration in the collected gas sample is detected and quantitatively analyzed, so that the metal concentration of the environment in the single crystal furnace 6 can be obtained, and then it can be determined whether the growth environment of the single crystal silicon is contaminated by metal. It should be noted that the seed crystal shaft 1 in this application not only has the functions and effects of the traditional seed crystal shaft 1, but also has the function of detecting metal concentration, realizing multiple functions of one component.

[0041] Specifically, the bottom end of the seed crystal shaft 1 is connected to a seed crystal, and the seed crystal shaft 1 can drive the seed crystal to move up and down and rotate. With the help of the rotation and upward pulling of the seed crystal shaft 1, a single crystal silicon rod can be pulled out.

[0042] By setting up the detection device 100, the metal concentration of the gas in the furnace body 61 can be sampled and detected regularly or irregularly, so as to timely discover potential pollution sources in the single crystal furnace 6 and take measures to prevent and control them, so as to prevent metal impurities from having an adverse effect on the growth of single crystal silicon, thereby helping to improve the purity and quality of single crystal silicon, and can also effectively improve the yield and production efficiency of single crystal silicon.

[0043] The seed crystal shaft 1 can move in the vertical direction relative to the auxiliary chamber 62, and the gas pipe 11 can also move in the vertical direction relative to the auxiliary chamber 62. This allows the height of the lower end of the gas pipe 11 to be adjusted to the position inside the furnace body 61. With the cooperation of the seed crystal shaft 1 and the sampling unit 2, gas at different heights inside the furnace body 61 can be extracted, so that different heights inside the furnace body 61 can be sampled and tested to determine whether different heights inside the furnace body 61 are contaminated by metals. The location and range of local contamination sources inside the furnace body 61 can be determined more accurately, which is conducive to taking targeted measures to control and eliminate them, thereby ensuring that single crystal silicon can grow with high quality in a stable, pure and precisely controlled environment, thereby improving the purity and yield of single crystal silicon.

[0044] At the same time, forced convection or natural convection in the furnace body 61 may cause differences in the gas composition at different heights. By sampling the gas at different heights in the furnace body 61 through the seed crystal axis 1, the influence caused by the above differences can be avoided, thereby improving the accuracy and reliability of the detection device 100 in detecting metal contamination in the single crystal furnace 6.

[0045] According to the detection device 100 of the embodiment of the present invention, by disposing a seed crystal shaft 1 extending in the vertical direction at the top of the auxiliary chamber 62 and a gas pipe 11 extending in the vertical direction through the seed crystal shaft 1, and by connecting the sampling tube 21 of the sampling unit 2 disposed outside the furnace body 61 to the gas pipe 11, it is possible to sample the gas in the furnace body 61 and detect and quantitatively analyze the metal concentration of the gas in the furnace body 61, thereby determining whether the single crystal furnace 6 is contaminated by metal. This facilitates the timely discovery of potential contamination sources in the single crystal furnace 6 and the implementation of preventive and control measures, thereby improving the purity and quality of single crystal silicon and effectively improving the yield rate and production efficiency of single crystal silicon. In addition, the seed crystal shaft 1 can move in the up and down directions relative to the auxiliary chamber 62, thereby sampling the gas at different height positions in the furnace body 61, thereby improving the accuracy and reliability of the detection device 100 in detecting metal contamination in the single crystal furnace 6, and also facilitating the determination of the location and range of local pollution sources in the furnace body 61, thereby facilitating the adoption of targeted measures for control and elimination, and further improving the purity and yield of single crystal silicon.

[0046] In some embodiments of the present invention, Figure 1-Figure 3 and Figure 8 As shown, the detection device 100 also includes an air intake pipe 41, which includes a first pipe section 411 and a second pipe section 412. The first pipe section 411 extends in a vertical direction and its upper end is detachably connected to the lower end of the air pipe 11. The second pipe section 412 extends in a horizontal direction and has one end connected to the lower end of the first pipe section 411 and the other end spaced apart from the inner sidewall of the auxiliary chamber 62. The first pipe section 411 extends in the same direction as the air pipe 11, making it easy to connect the first pipe section 411 to the lower end of the air pipe 11 through a threaded connection, for easy installation.

[0047] The second pipe section 412 below the first pipe section 411 extends horizontally. When connecting the first pipe section 411 to the gas pipe 11, the extension direction of the second pipe section 412 can be manually adjusted. This allows sampling of gas at different circumferential locations within the furnace body 61, thereby determining the metal contamination status at different circumferential locations of the auxiliary chamber 62. Forced convection or natural convection within the furnace body 61 can cause differences in gas composition at different locations. Sampling gas at different locations within the furnace body 61 can mitigate the effects of these differences, thereby improving the accuracy and reliability of the detection device 100 in detecting metal contamination within the single crystal furnace 6.

[0048] In addition, in some cases, there may be local pollution sources in the single crystal furnace 6, causing the metal concentration in the local area of the sub-chamber 62 to exceed the standard. Through the cooperation of the seed crystal shaft 1 and the suction pipe 41, the gas at different heights and directions in the sub-chamber 62 can be sampled, and the position and range of the local pollution source in the furnace body 61 can be determined more accurately, which is conducive to taking targeted measures to control and eliminate it, so as to ensure that the single crystal silicon can grow with high quality in a stable, pure and precisely controlled environment, further improving the purity and yield of the single crystal silicon.

[0049] In some embodiments of the present invention, Figure 1-Figure 3 As shown, the detection device 100 also includes an adjusting tube 22 and a connecting tube 23. The lower end of the adjusting tube 22 is connected to one end of the sampling tube 21. The length of the adjusting tube 22 is adjustable in the up and down directions. One end of the connecting tube 23 is connected to the upper end of the adjusting tube 22, and the other end is connected to the upper end of the air pipe 11. The lower end of the seed crystal shaft 1 is height-adjustable between the top and bottom of the sub-chamber 62.

[0050] It is understood that the length of the adjusting tube 22 is adjustable in the vertical direction, thereby enabling the seed shaft 1 to move in the vertical direction. The connecting tube 23 serves to connect, transmit, and fix the seed shaft 1 and the adjusting tube 22, so that the seed shaft 1 and the adjusting tube 22 are connected in the horizontal direction and can move synchronously. When the seed shaft 1 moves in the vertical direction, the height of the lower end of the seed shaft 1 between the top and bottom of the auxiliary chamber 62 changes. At this time, the seed shaft 1 can drive the adjusting tube 22 to extend and retract through the connecting tube 23 to ensure that the sampling tube 21 can remain stationary while the seed shaft 1 moves up and down, thereby ensuring the structural rationality and performance of the detection device 100.

[0051] The gas pipe 11, connecting pipe 23, regulating pipe 22, and sampling pipe 21 are connected. By adjusting the height of the position at which the lower end of the seed crystal shaft 1 extends into the space within the auxiliary chamber 62, gas at different heights within the auxiliary chamber 62 can be extracted, and sampling and testing can be performed at different heights within the auxiliary chamber 62 to determine whether different heights within the furnace body 61 are contaminated by metals. The operation is simple and easy to implement. The location and range of local contamination sources within the auxiliary chamber 62 can be more accurately determined, which facilitates the implementation of targeted measures to control and eliminate them, ensuring that single crystal silicon can be grown with high quality in a stable, pure, and precisely controlled environment, thereby improving the purity and yield of single crystal silicon.

[0052] like Figure 1 In the example shown, the seed crystal shaft 1 moves upward, the adjustment tube 22 extends, and the lower end of the seed crystal shaft 1 moves to the top of the sub-chamber 62 . At this time, the detection device 100 samples the gas at the top of the sub-chamber 62 .

[0053] like Figure 2In the example shown, the seed crystal shaft 1 moves downward, the adjustment tube 22 shortens, and the lower end of the seed crystal shaft 1 moves to the bottom of the sub-chamber 62 . At this time, the detection device 100 samples the gas at the bottom of the sub-chamber 62 .

[0054] In some embodiments of the present invention, Figure 1-Figure 3 As shown, the adjusting tube 22 is a bellows. The bellows is retractable, which facilitates adjustment of the length of the connecting tube 23, is simple to operate and has low cost.

[0055] In some embodiments of the present invention, Figure 3 and Figure 5 As shown, the furnace body 61 also has a main chamber 65, which is located at the lower side of the auxiliary chamber 62. A water-cooled screen 63, a guide tube 64 and a bottom heater 66 are arranged in the main chamber 65. The water-cooled screen 63 is formed in a ring shape and is suitable for moving in the up and down directions. The guide tube 64 is arranged around the water-cooled screen, and at least part of the guide tube 64 is located at the lower side of the water-cooled screen 63. The bottom heater 66 is arranged at the bottom of the main chamber 65, and the bottom heater 66 and the guide tube 64 are spaced apart in the up and down directions.

[0056] It is understandable that the water-cooling shield 63 is formed in a ring shape and is suitable for moving in the up and down directions. Water cooling technology can be used to absorb the heat generated in the main chamber 65 (while cooling the crystal rod), thereby improving the temperature distribution in the main chamber 65. It helps to reduce the temperature gradient in the main chamber 65 and make the temperature environment more stable during the growth of single crystal silicon. The guide tube 64 arranged around the water-cooling shield 63 can guide the flow path of the protective gas (such as argon) in the single crystal furnace 6, and blow away the pollutant gases (such as oxygen, SiO, etc.) generated during the crystal growth process to ensure the growth quality of single crystal silicon. The bottom heater 66 is used to maintain the high temperature environment at the bottom of the melt, improve the uniformity of the melt temperature distribution, and ensure the growth quality of single crystal silicon.

[0057] Furthermore, the detection device 100 also includes a cooling unit 3 and an extension tube 42. The cooling unit 3 is disposed within the furnace body 61 and includes a condenser tube 31. The upper end of the condenser tube 31 is detachably connected to the lower end of the gas pipe 11. The extension tube 42 includes a tube body 421. The tube body 421 extends in a vertical direction. The upper end of the tube body 421 is connected to the lower end of the condenser tube 31. The seed shaft 1 is adapted to move up and down between a first position and a second position. In the first position, the lower end of the tube body 421 is opposite the top end of the water-cooling shield 63 in the vertical direction. In the second position, the lower end of the tube body 421 is spaced between the bottom heater 66 and the guide tube 64 in the vertical direction.

[0058] It can be understood that the tube body 421 can serve as an extension of the air pipe 11. The connected tube body 421 and the condenser 31 enable the air pipe 11 to be connected to the main chamber 65, so that with the cooperation of the extension tube 42, the condenser 31, the seed crystal shaft 1 and the sampling unit 2, the gas in the main chamber 65 can be extracted, and the space near the water-cooled screen 63 can be sampled and tested, so as to determine whether the space near the water-cooled screen 63 below the sub-chamber 62 is contaminated by metal.

[0059] Furthermore, by adjusting the height at which the lower end of the seed axis 1 extends into the space within the auxiliary chamber 62, the height at which the lower end of the tube body 421 extends into the space within the main chamber 65 can be adjusted. The lower end of the tube body 421 moves between the first position and the second position, and gas at different heights, from the top of the water-cooling shield 63 to the space between the bottom heater 66 and the draft tube 64, can be extracted. That is, sampling and testing are performed at different heights within the main chamber 65 to determine whether different heights within the main chamber 65 are contaminated by metals (for example, the contamination at the water-cooling shield 63, the contamination at the draft tube 64, and the contamination near the bottom heater 66). The location and range of local contamination sources within the main chamber 65 can be determined more accurately, which facilitates the adoption of targeted measures to control and eliminate them, ensuring that single crystal silicon can grow with high quality in a stable, pure, and precisely controlled environment, thereby improving the purity and yield of single crystal silicon.

[0060] Among them, the main chamber 65 is usually maintained at a high temperature. The cooling unit 3 can cool the high-temperature gas extracted from the water-cooled screen 63 below the auxiliary chamber 62 and below the water-cooled screen 63, thereby preventing the excessively high temperature gas in the furnace body 61 from damaging the detection device 100 and extending the service life of the detection device 100.

[0061] In some embodiments of the present invention, Figure 3 and Figure 5 As shown, the extension tube 42 further includes an extension tube 422, which extends horizontally and has one end connected to the lower end of the tube body 421 and the other end spaced apart from the sidewall of the water-cooling shield 63. Therefore, when the lower end of the seed shaft 1 is moved to the top of the auxiliary chamber 62 and connected to the extension tube 42 and the condenser tube 31, the extension direction of the extension tube 422 can be manually adjusted, thereby enabling sampling of gas at different locations within the furnace body 61, near the water-cooling shield 63 and below the water-cooling shield 63. Forced convection or natural convection can cause differences in gas composition at different locations within the auxiliary chamber 62 and below the water-cooling shield 63. By sampling gas at different locations within the furnace body 61, the effects of these differences can be avoided, thereby improving the accuracy and reliability of the detection device 100 in detecting metal contamination within the single crystal furnace 6.

[0062] In addition, in some cases, there may be local pollution sources in the single crystal furnace 6, resulting in excessive metal concentration in the local area near the water-cooling screen 63 below the sub-chamber 62 and below the water-cooling screen 63. By adjusting the extension direction of the extension tube 422 and adjusting the up and down movement height of the seed crystal axis 1, the gas at different heights and directions in the furnace body 61 can be sampled, and the position and range of the local pollution source in the furnace body 61 can be determined more accurately, which is conducive to taking targeted measures to control and eliminate it, so as to ensure that single crystal silicon can grow with high quality in a stable, pure and precisely controlled environment, further improving the purity and yield of single crystal silicon.

[0063] In some embodiments of the present invention, Figure 3 and Figure 5 As shown, the cooling unit 3 includes a housing 32, which defines a cooling chamber 323. A water inlet 321 communicating with the cooling chamber 323 is provided at the upper end of the housing 32, and a water outlet 322 communicating with the cooling chamber 323 is provided at the lower end of the housing 32. A condenser tube 31 is disposed within the housing 32. Coolant 57 flows through the housing 32. The coolant 57 contacts the outer wall of the condenser tube 31 disposed within the housing 32, removing heat from the condenser tube 31 and thereby cooling the high-temperature gas within the condenser tube 31. This prevents the overheated gas within the furnace body 61 from damaging the detection device 100 and extends the service life of the detection device 100. At the same time, metal particles entrained by the high-temperature gas within the condenser tube 31 will solidify within the condenser tube 31 due to the lowered temperature, enabling sampling of the metals contained in the furnace gas.

[0064] In some embodiments of the present invention, Figure 3-Figure 5 As shown, the seed crystal shaft 1 is provided with a water inlet channel 12 and a water outlet channel 13 extending in the up-down direction. The water inlet end of the water inlet channel 12 is connected to the water inlet pipe, and the water outlet end of the water inlet channel 12 is connected to the water inlet 321. The water inlet end of the water outlet channel 13 is connected to the water outlet 322, and the water outlet end of the water outlet channel 13 is connected to the water outlet pipe. Among them, the lower end of the water inlet channel 12 can be connected to the water inlet 321 through a hose, so as to facilitate the introduction of the coolant 57 from the water inlet channel 12 into the shell 32. The lower end of the water outlet channel 13 can be connected to the water outlet 322 through a hose, so as to facilitate the introduction of the coolant 57 such as water out of the shell 32 and into the water outlet channel 13. In this way, the water inlet channel 12, the shell 32 and the water outlet channel 13 can form a connected waterway with a simple structure and reasonable layout, which can ensure the circulation of the coolant 57 in the shell 32, thereby ensuring the cooling effect.

[0065] Preferably, the water inlet pipe is connected to the flow valve, which can control the liquid flow entering the water inlet channel 12, thereby controlling the liquid inlet amount of the shell 32, so as to actively control the cooling amount of the cooling unit 3, such as the flow rate of the coolant 57 entering the shell 32 can be controlled to 1L / min-3L / min to ensure the cooling effect of the cooling unit 3.

[0066] In some embodiments of the present invention, Figure 3 and Figure 5 As shown, the condenser tube 31 spirally extends in the vertical direction within the housing 32, and the spiral diameter of the condenser tube 31 gradually increases from bottom to top. This spiral extension of the condenser tube 31 effectively increases its length, thereby increasing the flow path and condensation time of the sampled gas within the condenser tube 31, thereby enhancing the condensation effect of the sampled gas. As the temperature within the furnace body 61 gradually decreases from bottom to top, the temperature of the coolant 57 within the condenser tube 31 gradually decreases. This causes the spiral diameter of the condenser tube 31 to gradually increase, allowing the sampled gas to flow along a longer path and for a longer time within the condenser tube 31, where the coolant 57 temperature is lower, thereby further enhancing the condensation effect of the sampled gas. Furthermore, because the heat exchange length per unit height of the condenser tube 31 gradually increases from bottom to top, the sampled gas can be slowly cooled as it flows through the condenser tube 31, preventing the condenser tube 31 from bursting due to a sudden drop in temperature.

[0067] In some embodiments of the present invention, Figure 3 and Figure 5 As shown, the lower end of the condenser 31 has a bend 311, and the bend 311 is convex and bent in the horizontal direction. The metal particles entrained by the high-temperature gas in the condenser 31 will solidify and adhere to the inner surface of the condenser 31 due to the temperature drop. The bend 311 can prevent the condensed solid particles from falling out of the condenser 31 into the furnace body 61, causing further contamination of the furnace body 61 and other components. In addition, the solid particles condensed into the condenser 31 will need to be recovered and placed in the sampling unit 2 for detection. If the solid particles fall directly from the condenser 31, it will also cause errors in the sampling and measurement results of the detection device 100, thereby improving the accuracy and reliability of the detection device 100 in detecting metal contamination in the single crystal furnace 6.

[0068] In some embodiments of the present invention, Figure 1 、 Figure 2 and Figure 3As shown, the sampling unit 2 includes a gas washing pool 24 and a liquid collecting pool 26. The gas washing pool 24 is arranged outside the furnace body 61. The gas washing pool 24 has a gas washing chamber 241 and an exhaust port 243 and an air inlet 244 connected to the gas washing chamber 241. The end of the sampling tube 21 facing away from the auxiliary chamber 62 is connected to the air inlet 244. The gas washing chamber 241 is used to accommodate the gas washing liquid 56. The bottom wall of the gas washing pool 24 also has a liquid outlet 245 connected to the gas washing chamber 241. The liquid collecting pool 26 is located below the gas washing pool 24 and has a liquid inlet 261 above it that is connected to the liquid outlet 245. Furthermore, the air inlet 244 and the exhaust port 243 are arranged on the top wall of the gas washing pool 24, and the sampling tube 21 extends into the bottom of the gas washing chamber 241 through the air inlet 244.

[0069] It is understandable that the gas washing tank 24 and the liquid collecting tank 26 are used to sample the metals contained in the extracted furnace gas so as to facilitate subsequent metal concentration detection and metal quantitative analysis.

[0070] When sampling, the liquid outlet 245 is first closed, so that the sampling unit 2 samples a predetermined volume of gas in the furnace body 61. The end of the sampling tube 21 facing away from the auxiliary chamber 62 extends from the air inlet 244 to a position near the bottom of the washing liquid 56 in the washing chamber 241. As a result, the sample gas in the sampling tube 21 can enter the washing liquid 56 and float from the bottom of the washing liquid 56 to the top of the washing liquid 56 under the action of gravity. During this process, the metal particles carried by the sample gas are precipitated in the washing liquid 56 or react with the washing liquid 56. Then the sample gas is discharged from the exhaust port 243 located on the top wall of the washing tank 24. After a predetermined volume of sampling gas is discharged from the exhaust port 243, the liquid outlet 245 is opened to allow the metal-containing washing liquid 56 in the washing tank 24 to enter the liquid collecting tank 26, and then the washing tank 24 is flushed with a predetermined volume of new washing liquid 56. The flushed washing liquid 56 is also collected in the liquid collecting tank 26 through the liquid inlet 261, thereby completing the sampling of the metal contained in the sampling gas.

[0071] A predetermined volume of scrubbing liquid 56 is then sampled from the liquid collection tank 26 and tested using ICP-MS (Inductively Coupled Plasma Mass Spectrometry) to perform metal analysis and obtain the metal concentration of the scrubbing liquid 56. The metal concentration of the sampled gas is then calculated and compared with the upper limit metal concentration, thereby determining whether the single crystal silicon growth environment is contaminated by metals.

[0072] For example, when sampling, the liquid outlet 245 is first closed, so that the sampling unit 2 samples a predetermined volume V1 of gas in the furnace body 61, and the scrubbing pool 24 has a volume V2 of scrubbing liquid 56, which is a dilute hydrochloric acid solution with a concentration of 1-2 mol / L. After the sample gas in the sampling tube 21 enters the bottom of the washing liquid 56, it floats from the bottom of the washing liquid 56 to the top of the washing liquid 56 due to the action of gravity. After the predetermined volume V1 of the sampling gas is discharged from the exhaust port 243, the liquid outlet 245 is opened to allow the washing liquid 56 with a volume V2 containing metal in the washing pool 24 to enter the collecting pool 26, and then the washing pool 24 is flushed with new washing liquid 56 with a volume V3. The flushed washing liquid 56 also enters the collecting pool 26 through the liquid inlet 261. At this time, a total volume of washing liquid 56 of V2+V3 is collected in the collecting pool 26, thereby completing the sampling of the metal contained in the sampling gas with a volume of V1.

[0073] Then, a sample volume V0 of the scrubbing liquid 56 in the liquid collection tank 26 is sent to the ICP-MS for metal analysis to obtain the metal concentration of the scrubbing liquid 56 as X1. Then, the metal concentration of the sampled gas is calculated to be H1 = X1 * (V2 + V3) / V1. The upper limit concentration of metals specified for general product silicon wafers is ρ = 5E 10 atoms / cm3, then H1 < ρ should be satisfied. If H1 ≥ ρ, it can be determined that the single crystal silicon growth environment is highly contaminated by metals, which will cause the metal content in the product to exceed the standard.

[0074] In some embodiments, as Figure 1 、 Figure 2 and Figure 3 As shown, a stop valve 58 is provided between the liquid outlet 245 and the liquid inlet 261 to facilitate controlling the opening and closing of the liquid outlet 245 and the liquid inlet 261 .

[0075] In some embodiments of the present invention, Figure 1 、 Figure 2 and Figure 3 As shown, the air washing chamber 241 has a plurality of grilles 25 spaced apart in the vertical direction, which are used to divide the air washing chamber 241 into a plurality of sub-cavities 242 spaced apart in the vertical direction. The sampling tube 21 extends into the sub-cavity 242 of the lowest layer. The plurality of grilles 25 have avoidance holes 251 for the sampling tube 21 to pass through and air outlets 252 connecting two adjacent sub-cavities 242.

[0076] It will be appreciated that the avoidance holes 251 on the multiple grilles 25 are opposed to each other, facilitating the passage of the sampling tube 21 through the multiple grilles 25 and allowing the bottom end of the sampling tube 21 to extend into the bottom sub-cavity 242. This allows the sample gas in the sampling tube 21 to enter the bottom region of the scrubbing liquid 56. Under the action of gravity, the sample gas floats layer by layer from the scrubbing liquid 56 in the bottom sub-cavity 242 through the gas outlet 252 to the scrubbing liquid 56 in the top sub-cavity 242. During this process, metal particles carried by the sample gas precipitate in the scrubbing liquid 56 or react with the scrubbing liquid 56, thereby enhancing the scrubbing effect of the scrubbing liquid 56 on the sample gas and ensuring the sampling quality of metals in the sample gas.

[0077] In some embodiments of the present invention, Figure 1-Figure 3 、 Figure 6 and Figure 7 As shown, the gas outlets 252 on two adjacent grids 25 are located on either side of the length of the scrubbing tank 24. This allows the sample liquid to rise in the scrubbing liquid 56 in an S-shaped pattern, increasing the flow path and flow time of the sample liquid in the scrubbing liquid 56. This allows metal particles carried by the sample gas to fully settle or react with the scrubbing liquid 56, thereby further enhancing the scrubbing effect of the scrubbing liquid 56 on the sample gas and improving the sampling quality of metals in the sample gas.

[0078] Specifically, the grille 25 can be divided into grille No. 1 253 and grille No. 2 254. The avoidance holes 251 on grille No. 1 253 and grille No. 2 254 are opposite to each other. The air inlet 244 of grille No. 1 253 is located at the end of grille No. 1 253 in the length direction away from the avoidance hole 251, and the air inlet 244 of grille No. 2 254 is located at the end of grille No. 2 254 in the length direction close to the avoidance hole 251. In the up and down direction, grille No. 1 253 and grille No. 2 254 are spaced and alternately arranged in the air washing chamber 241.

[0079] In some embodiments of the present invention, Figure 1 、 Figure 2 and Figure 3 As shown, the sampling tube 21 is provided with a one-way valve 51 and a control valve 52. Both the one-way valve 51 and the control valve 52 are located outside the furnace body 61 and outside the gas washing pool 24. The one-way valve 51 is located on the side of the control valve 52 away from the seed crystal axis 1. The one-way valve 51 only allows gas to flow from the control valve 52 side to the one-way valve 51 side. The sampling unit 2 also includes a vacuum pump 53, which is connected to the sampling tube 21 and is located between the one-way valve 51 and the control valve 52. The vacuum pump 53 can provide power for extracting gas from the furnace body 61, the control valve 52 can control the opening and closing of the sampling tube 21, and the one-way valve 51 can prevent the sampling gas and the gas washing liquid 56 from flowing back and being sucked back, thereby ensuring the flow direction of the fluid in the sampling tube 21.

[0080] During the sampling process, when the pressure P1 required for crystal growth is reached within furnace body 61 and the inert gas flow rate at the inlet end of auxiliary chamber 62 reaches L, vacuum pump 53 is turned on, causing the pressure P2 between the one-way valve 51 and the control valve 52 in sampling tube 21 to continuously decrease. Pressure P1 is 15-100 mbar, and the flow rate L is 50-200 L / min. When P2 is less than P1, a pressure differential is generated across control valve 52. At this point, control valve 52 is opened, and the gas within furnace body 61 enters sampling tube 21 under the action of the pressure differential. Under the control of one-way valve 51, it flows into gas scrubber 24, thereby enabling sampling of the gas within furnace body 61.

[0081] In some embodiments of the present invention, Figure 1 、 Figure 2 and Figure 3 As shown, the sampling unit 2 also includes a pressure detection device 54, which is installed on the sampling tube 21 and located between the one-way valve 51 and the control valve 52. The pressure detection device 54 can monitor the pressure between the one-way valve 51 and the control valve 52 in real time, facilitating operation by the operator. When the vacuum pump 53 is turned on and the pressure P2 between the one-way valve 51 and the control valve 52 in the sampling tube 21 is lower than the pressure P1 in the furnace body 61, the control valve 52 can be opened promptly to prevent the pressure P2 between the one-way valve 51 and the control valve 52 from being too low, which could damage the sampling tube 21. For example, the control valve 52 is opened when the pressure P2 detected by the pressure detection device 54 satisfies P2 = P1 - 10 mbar.

[0082] In some embodiments of the present invention, Figure 1 、 Figure 2 and Figure 3 As shown, the sampling tube 21 is also provided with a flow meter 55, which is located outside the furnace body 61 and on the side of the control valve 52 facing away from the one-way valve 51. The flow meter 55 can monitor the gas flow rate of the gas extracted from the furnace body 61 through the sampling tube 21 in real time, thereby facilitating the calculation of the specific volume of the sampled gas and the subsequent calculation of the metal concentration in the sampled gas.

[0083] For example, in a specific sampling process, when the gas in the furnace body 61 starts to be extracted, the timing is T0, and after a period of extraction, when the gas in the furnace body 61 is finished being extracted, the timing is T1. Thus, the gas volume V1 of the T1-T0 time period can be calculated based on the data of the flow meter 55, wherein the time for extracting the sample gas can be controlled within the range of 4-24h.

[0084] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the illustrative use of the above terms does not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0085] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and purpose of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A detection device, characterized in that: Used for measuring metal contamination in a single crystal furnace, the single crystal furnace includes a furnace body, the upper end of the furnace body has a sub-chamber, the detection device includes: a seed crystal shaft extending in a vertical direction and movable in the vertical direction relative to the auxiliary chamber, and adapted to rotate about a central axis of the auxiliary chamber, wherein an air tube extending in the vertical direction is provided in the seed crystal shaft; A sampling unit is located outside the furnace body and has a sampling tube. One end of the sampling tube is connected to the upper end of the gas pipe. The sampling unit is used to extract sample gas from the gas pipe and detect the metal concentration of the sample gas.

2. The detection device according to claim 1, characterized in that Also includes: An air intake pipe, the air intake pipe includes a first pipe section and a second pipe section, the first pipe section extends in the up-down direction and the upper end is detachably connected to the lower end of the air pipe, the second pipe section extends in the horizontal direction and one end is connected to the lower end of the first pipe section, and the other end is spaced apart from the inner side wall of the auxiliary chamber.

3. The detection device according to claim 1, characterized in that Also includes: an adjusting tube, the lower end of which is connected to one end of the sampling tube, and the length of the adjusting tube is adjustable in the vertical direction; A connecting pipe, one end of which is connected to the upper end of the regulating pipe, and the other end of which is connected to the upper end of the air pipe, and the lower end of the seed crystal shaft is height-adjustable between the top and bottom of the auxiliary chamber.

4. The detection device according to claim 1, characterized in that The furnace body further comprises a main chamber, which is located below the auxiliary chamber and contains: A water-cooling screen, wherein the water-cooling screen is formed in a ring shape and is suitable for moving in an up-down direction; A guide tube, the guide tube is arranged around the water-cooling screen, and at least a portion of the guide tube is located on the lower side of the water-cooling screen; A bottom heater, the bottom heater is arranged at the bottom of the main chamber, and the bottom heater and the guide tube are spaced apart in the vertical direction; The detection device also includes: A cooling unit, the cooling unit being used to cool the sampled gas, the cooling unit comprising a condenser, the upper end of the condenser being detachably connected to the lower end of the gas pipe; The extension tube includes a tube body, the tube body extends in the up-down direction, and the upper end of the tube body is connected to the lower end of the condenser tube. The seed crystal shaft is suitable for moving up and down between a first position and a second position. In the first position, the lower end of the tube body is opposite to the top of the water-cooled screen along the up and down direction. In the second position, the lower end of the tube body is spaced between the bottom heater and the guide tube along the up and down direction.

5. The detection device according to claim 4, characterized in that The extension pipe further includes an extension pipe, which extends in a horizontal direction and has one end connected to the lower end of the pipe body and the other end spaced apart from the side wall of the water-cooling panel.

6. The detection device according to claim 4, characterized in that The cooling unit comprises: The shell defines a cooling chamber, the upper end of the shell is provided with a water inlet communicating with the cooling chamber, the lower end of the shell is provided with a water outlet communicating with the cooling chamber, and the condenser is provided in the cooling chamber.

7. The detection device according to claim 6, characterized in that The seed crystal axis is provided with a water inlet channel and a water outlet channel extending in the up and down directions, the water inlet end of the water inlet channel is connected to the water inlet pipe, the water outlet end of the water inlet channel is connected to the water inlet, the water inlet end of the water outlet channel is connected to the water outlet, and the water outlet end of the water outlet channel is connected to the water outlet pipe.

8. The detection device according to claim 6, characterized in that The condenser tube spirally extends in the up-down direction in the shell. In the direction from bottom to top, the spiral winding diameter of the condenser tube gradually increases. The lower end of the condenser tube has a bending portion, and the bending portion protrudes and bends toward the horizontal direction.

9. The detection device according to claim 1, characterized in that The sampling unit comprises: A gas washing pool, the gas washing pool is arranged outside the furnace body, the gas washing pool has a gas washing cavity and an exhaust port and an air inlet connected to the gas washing cavity, the end of the sampling tube facing away from the secondary chamber is connected to the air inlet, the gas washing cavity is used to accommodate the gas washing liquid, and the bottom wall of the gas washing pool also has a liquid outlet connected to the gas washing cavity; A liquid collecting pool is located below the gas washing pool and has a liquid inlet on the upper side that is connected to the liquid outlet.

10. The detection device according to claim 9, characterized in that: The air inlet and the exhaust port are arranged on the top wall of the air washing pool, and the sampling tube extends into the bottom of the air washing chamber through the air inlet. The air washing chamber is provided with a plurality of grilles arranged at intervals along the up and down directions, which are used to divide the air washing chamber into a plurality of sub-cavities spaced apart along the up and down directions. The sampling tube extends into the sub-cavity of the lowest layer, and the plurality of grilles are provided with avoidance holes for the sampling tube to pass through and air outlets connecting two adjacent sub-cavities. The air outlets on two adjacent grilles are respectively located on both sides of the length direction of the air washing pool.

Images