Package structure

Abstract

A package structure includes a first bonding film on a first package element and a first alignment mark on the first bonding film. The first alignment mark includes a plurality of first patterns spaced apart from each other. The package structure includes a second bonding film on the second package element and bonded to the first bonding film, and a second alignment mark in the second bonding film. The second alignment mark includes a plurality of second patterns spaced apart from each other, and the first pattern overlaps the second patterns. In this case, due to a pitch difference between the first pitch and the second pitch, the optical signal may form an interference pattern through a varying pitch between the gratings through the top wafer and the bottom wafer. By reading the optical signal, the resolution of overlap (misalignment) measurement is improved.

Description

Technical Field

[0001] An embodiment of the present invention relates to a packaging structure, and more particularly to a packaging structure including a first alignment mark and a second alignment mark corresponding to each other. Background Art

[0002] The semiconductor industry continues to increase the integration density of various electronic components (such as transistors, diodes, resistors, capacitors, etc.) by continuously shrinking the minimum feature size, allowing more components to be packed into a given area. Individual dies are often packaged separately. The packaging not only protects the semiconductor device from environmental contaminants but also provides a connection interface for the encapsulated semiconductor device.

[0003] Three-dimensional integrated circuits (3DICs) are the latest development in semiconductor packaging, in which multiple semiconductor dies are stacked on top of each other, as exemplified by package-on-package (PoP) and system-in-package (SiP) packaging technologies. Some 3DICs are fabricated at the semiconductor wafer level by stacking dies on top of each other. 3DICs offer improved integration density and other advantages, such as faster speeds and higher bandwidth, due to, for example, reduced interconnect lengths between stacked dies. However, many challenges remain associated with 3DICs. Utility Model Content

[0004] An embodiment of the present utility model provides a packaging structure, comprising a first bonding film formed on a first packaging component and a first alignment mark formed in the first bonding film. The first alignment mark includes a plurality of first patterns separated from each other. The packaging structure includes a second bonding film formed on a second packaging component and bonded to the first bonding film and a second alignment mark formed in the second bonding film. The second alignment mark includes a plurality of second patterns separated from each other, and the first pattern overlaps with the second pattern. In a top view, each of the first patterns is divided into a first part and a second part, the first part of the first pattern is separated by a first spacing, the second part of the first pattern is separated by a second spacing, and the first spacing is different from the second spacing.

[0005] In some embodiments, a first group of the plurality of first patterns is arranged along a first direction, and a second group of the plurality of first patterns is arranged along a second direction perpendicular to the first direction.

[0006] In some embodiments, in the top view, the first group of the plurality of first patterns is arranged symmetrically about a central axis.

[0007] In some embodiments, in the top view, each of the multiple second patterns is divided into a first part and a second part, the multiple first parts of the multiple second patterns overlap with the multiple first parts of the multiple first patterns and are separated by the second spacing, wherein the multiple second parts of the multiple second patterns overlap with the multiple second parts of the multiple first patterns and are separated by the first spacing.

[0008] In some embodiments, in the top view, the first portions and the second portions of the first patterns are both elongated.

[0009] An embodiment of the present invention provides a packaging structure, comprising a first bonding film and a second bonding film. The first bonding film is located on a first packaging component. A first alignment mark is formed in the first bonding film, and the first alignment mark includes a plurality of first patterns separated from each other by a first spacing. The second bonding film is located on a second packaging component and bonded to the first bonding film. A second alignment mark is formed in the second bonding film, and the second alignment mark includes a plurality of second patterns separated from each other by a second spacing. The second packaging component is bonded to the first packaging component through the first bonding film and the second bonding film, and the first spacing is different from the second spacing.

[0010] In some embodiments, the plurality of first patterns are rectangles with uniform lengths. In some embodiments, one of the plurality of second patterns includes a first portion and a second portion separated from the first portion.

[0011] In some embodiments, in a top view, one of the second patterns is partially exposed to one of the first patterns, and the one of the first patterns overlaps with the one of the second patterns.

[0012] In some embodiments, the plurality of first patterns are arranged symmetrically about a first axis, the plurality of second patterns are arranged symmetrically about a second axis, and the first axis is parallel to the second axis.

[0013] At least one embodiment of the present invention has the following advantages or technical effects:

[0014] The first alignment mark features multiple sub-alignment marks spaced at varying intervals, while the second alignment mark also features multiple sub-alignment marks spaced at similar intervals. By including multiple overlapping sub-alignment marks in the first and second alignment marks, different alignment error resolutions can be achieved during package assembly, allowing for dual alignment error checks. By providing two sets of alignment marks extending in two directions, two-dimensional (2D) alignment can be achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The following detailed description, taken in conjunction with the accompanying drawings, will provide a better understanding of the concepts of the embodiments of the present invention. It should be noted that, in accordance with standard industry practice, the various features in the drawings are not necessarily drawn to scale. In fact, the dimensions of various features may be arbitrarily enlarged or reduced for clarity of illustration. Similar reference numerals are used throughout the specification and drawings to indicate similar features.

[0016] Figures 1A to 1D Cross-sectional views illustrating various stages of forming a first alignment mark according to some embodiments of the present disclosure.

[0017] Figures 2A to 2B Cross-sectional views illustrating various stages of forming a package structure according to some embodiments of the present disclosure.

[0018] Figure 3 A cross-sectional view of a package structure according to some embodiments of the present disclosure is shown.

[0019] Figure 4A A schematic top view of a first alignment mark according to some embodiments of the present disclosure is shown.

[0020] Figure 4B A schematic top view of a second alignment mark according to some embodiments of the present disclosure is shown.

[0021] Figure 5 is a schematic top view illustrating a first alignment mark and a second alignment mark according to some embodiments of the present disclosure.

[0022] Figures 6A to 6C A schematic top view of a first alignment mark and a second alignment mark according to some embodiments of the present disclosure is shown.

[0023] 7A to 7B A schematic top view of a first alignment mark and a second alignment mark according to some embodiments of the present disclosure is shown.

[0024] Figures 8A to 8B A schematic top view of a first alignment mark and a second alignment mark according to some embodiments of the present disclosure is shown.

[0025] Figure 9 A cross-sectional view of a package structure according to some embodiments of the present disclosure is shown.

[0026] Figure 10 A cross-sectional view of a package structure according to some embodiments of the present disclosure is shown.

[0027] The accompanying drawings are described as follows:

[0028] 10,20,30: packaging structure

[0029] 100: first packaging component

[0030] 110: First bonding film

[0031] 110T: Top surface

[0032] 115: First groove

[0033] 115B: bottom

[0034] 115S: Sidewall

[0035] 120: First alignment mark (alignment mark)

[0036] 120A: Sub-alignment mark (first sub-alignment mark)

[0037] 120B: Sub-alignment mark (second sub-alignment mark)

[0038] 120C: Sub-registration mark (third sub-registration mark)

[0039] 120D: Sub-registration mark (fourth sub-registration mark)

[0040] 122: first dielectric material

[0041] 124: first conductive material

[0042] 125, 125A, 125B, 125C, 125D: First pattern

[0043] 125A1: Part 1

[0044] 125A2: Part 2

[0045] 125AC: Standard pattern

[0046] 125BC: Standard pattern

[0047] 125C1: Part 1

[0048] 125C2: Part 2

[0049] 125CC: Standard pattern

[0050] 200: Second packaging component

[0051] 210: Second bonding film

[0052] 210T: Top surface

[0053] 220: Second alignment mark (alignment mark)

[0054] 220A: Sub-alignment mark (first sub-alignment mark)

[0055] 220B: Sub-alignment mark (second sub-alignment mark)

[0056] 220C: Sub-registration mark (third sub-registration mark)

[0057] 220D: Sub-alignment mark (fourth sub-alignment mark)

[0058] 222: Second dielectric material

[0059] 224: second conductive material

[0060] 225, 225A, 225B, 225C, 225D: Second pattern

[0061] 225A1: Part 1

[0062] 225A2: Part 2

[0063] 225AC: Standard pattern

[0064] 225B1: Part 1

[0065] 225B2: Part 2

[0066] 225BC: Standard pattern

[0067] 225C1: Part 1

[0068] 225C2: Part 2

[0069] 225CC: Standard pattern

[0070] 300: first packaging component

[0071] 302,304: dielectric layer

[0072] 310:Through Silicon Via Structure (TSV Structure)

[0073] 312:Metalized pattern

[0074] 314: Conductive characteristics

[0075] 315:Internal connection structure

[0076] 320: Bonding film

[0077] 322: Bonding pad

[0078] 330: First alignment mark

[0079] 360: Bump structure

[0080] 400: Second packaging component

[0081] 420: Bonding film

[0082] 422: Bonding pad

[0083] 430: Second alignment mark

[0084] 500: Third package component

[0085] 520: bonding film

[0086] 522: Bonding pad

[0087] 530: Third alignment mark

[0088] C: Alignment axis

[0089] C1: First axis

[0090] C2: Second axis

[0091] D1, D2: height difference

[0092] MF1, MF2: misaligned features

[0093] PA1: First pitch (pitch)

[0094] PA2: Second spacing (pitch)

[0095] PB1: First pitch (pitch)

[0096] PB2: Second Pitch (Pitch)

[0097] PB3: Third Pitch (Pitch)

[0098] PC1: First spacing (spacing)

[0099] PC2: Second spacing (spacing). DETAILED DESCRIPTION

[0100] The following disclosure provides many different embodiments or examples for implementing different features of the embodiments of the present invention. Reference numerals and / or letters may be repeated in the various examples described in this disclosure. These repetitions are for the purpose of brevity and clarity and do not in themselves indicate any relationship between the various disclosed embodiments and / or configurations. In addition, specific examples of components and configurations are described below to simplify the description of the embodiments of the present invention. Of course, these specific examples are merely illustrative and are not intended to limit the embodiments of the present invention. For example, in the following description, it is mentioned that a first feature is formed on or above a second feature, which means that it may include an embodiment in which the first feature and the second feature are in direct contact, and may also include an embodiment in which an additional feature is formed between the first feature and the second feature, so that the first feature and the second feature may not be in direct contact.

[0101] Additionally, spatially relative terms may be used herein. For example, "below," "beneath," "lower," "above," "upper," and similar terms may be used to describe the relationship of one element or feature to another element or feature shown in the drawings. These spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation shown in the drawings. The device may be rotated 90 degrees or at other orientations, and the spatially relative terms used herein should be interpreted accordingly.

[0102] Embodiments of a package structure and a method for manufacturing the same are provided. The package structure includes a first alignment mark and a second alignment mark corresponding to each other. Each of the first alignment mark and the second alignment mark includes a first group and a second group extending in two directions. Thus, two-dimensional (2D) alignment can be achieved. Furthermore, because the first and second alignment marks are provided with multiple sub-alignment marks, different resolutions can be achieved.

[0103] Figures 1A to 1D Cross-sectional views illustrating various stages of forming a first alignment mark 120 according to some embodiments of the present disclosure are shown. For example, the first package component 100 includes a semiconductor substrate, such as doped or undoped silicon, or an active layer of a semiconductor-on-insulator (SOI) substrate. In some embodiments, the first package component 100 includes other semiconductor materials, such as germanium, compound semiconductors (including silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and indium antimonide), alloy semiconductors (including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and GaInAsP), or combinations thereof. Other substrates, such as multilayer substrates or gradient substrates, may also be used.

[0104] In addition, a first bonding film 110 is formed over the first package element 100 for subsequent bonding processes. For example, the material of the first bonding film 110 includes SiON, SiO2, any other suitable material, or a combination of the foregoing. In some embodiments, a patterned photoresist layer (not shown) is formed over the first bonding film 110. The patterned photoresist layer can be formed by a deposition process and a patterning process. The deposition process for forming the patterned photoresist layer can include a chemical vapor deposition (CVD) process, a high-density plasma chemical vapor deposition (HDPCVD) process, a spin coating process, a sputtering process, or other applicable processes. The patterning process for forming the patterned photoresist layer can include a photolithography process and an etching process. The photolithography process can include photoresist coating (e.g., spin coating), soft baking, mask alignment, exposure, post-exposure baking, photoresist development, rinsing, and drying (e.g., hard baking). The etching process can include a dry etching process or a wet etching process. Next, an etching process can be performed using the patterned photoresist layer as a mask to recess the first package element 100 and form a plurality of first trenches 115 in the first bonding film 110. The etching process can be a dry etching process or a wet etching process. In some embodiments, the dry etching process includes using a fluorine-based etchant gas, such as SF6, CxFy, NF3, or a combination thereof. The etching process can be a time-controlled process. Subsequently, the patterned photoresist layer is removed.

[0105] In some embodiments, each of the first trenches 115 has a bottom surface 115B and a sidewall 115S connected to the bottom surface 115B. For example, the exemplary sidewall 115S is substantially perpendicular to the bottom surface 115B. However, the present disclosure is not limited to this. The first trenches 115 are separated from each other by a portion of the first bonding film 110. In some embodiments, the above-mentioned portion of the first bonding film 110 is sandwiched between adjacent first trenches 115 in a horizontal direction (e.g., a direction parallel to the X-axis). In some embodiments, the depth of the first trench 115 is less than the thickness of the first bonding film 110. In other words, the first trench 115 may not penetrate the first bonding film 110 to expose the first package component 100 below. However, the present disclosure is not limited to this. In some embodiments, the first trenches 115 are formed to have the same width in a direction parallel to the XY plane. In some embodiments, the first trenches 115 are formed at a constant interval. Therefore, the spacing between the first trenches 115 is constant in a direction parallel to the XY plane. However, the present disclosure is not limited to this.

[0106] Next, if Figure 1BAs shown, a first dielectric material 122 is deposited in the first trench 115. In some embodiments, the first dielectric material 122 covers the bottom surface 115B and sidewalls 115S of the first trench 115, and the top surface 110T of the first bonding film 110 is also covered by the first dielectric material 122. In some embodiments, the first dielectric material 122 is conformally formed on the first bonding film 110, but the present disclosure is not limited thereto. In some embodiments, the thickness of the first dielectric material 122 on the bottom surface 115B of the first trench 115 is greater than the thickness of the first dielectric material 122 on the sidewalls 115S of the first trench 115.

[0107] For example, the first dielectric material 122 includes one or more sub-dielectric layers formed from materials such as silicon dioxide (SiO2), phosphor-silicate glass (PSG), boro-silicate glass (BSG), boron-doped phosphor-silicate glass (BPSG), and undoped silicate glass (USG). In some embodiments, the first dielectric material 122 is formed by, for example, spin coating, lamination, or chemical vapor deposition (CVD). However, the present disclosure is not limited thereto. Any suitable material and method for forming the first dielectric material 122 is contemplated within the scope of the present disclosure.

[0108] like Figure 1C As shown, a first conductive material 124 is deposited in the first trench 115 and over the first dielectric material 122. For example, the first conductive material 124 includes tungsten (W), cobalt (Co), nickel (Ni), copper (Cu), silver (Ag), gold (Au), aluminum (Al), any other suitable conductive material, or a combination thereof. In some embodiments, the first conductive material 124 and the first dielectric material 122 overfill the first trench 115 and cover the top surface 110T of the first bonding film 110.

[0109] like Figure 1DAs shown, a planarization process (e.g., chemical mechanical polishing (CMP) or any other suitable planarization process) is performed on the first dielectric material 122 and the first conductive material 124. In this way, the top surfaces of the first dielectric material 122 and the first conductive material 124 can be substantially coplanar with the top surface 110T of the first bonding film 110. After the planarization process is completed, a first alignment mark 120 is formed in the first bonding film 110. The first alignment mark 120 includes a plurality of first patterns 125 separated from each other. More specifically, each of the first patterns 125 is formed by the first dielectric material 122 and the first conductive material 124 in each first trench 115. In other words, the first dielectric material 122 and the first conductive material 124 in each first trench 115 define each of the first patterns 125.

[0110] In some embodiments, the first alignment mark 120 may be formed by the first trench 115, and the first dielectric material 122 and the first conductive material 124 may be omitted. Figures 2A to 2B The details of the bonding process will be discussed further. Figure 4A The layout details of the first alignment mark 120 are further discussed.

[0111] Figures 2A to 2B 1 is a cross-sectional view showing various stages of forming a package structure 10 according to some embodiments of the present disclosure. In some embodiments, the package structure 10 is formed by bonding the second package component 200 to the first package component 100. Figure 2A , the first alignment mark 120 is formed in the first bonding film 110 located above the first package component 100. In addition, the second alignment mark 220 is formed in the second bonding film 210 located above the second package component 200. In some embodiments, the second alignment mark 220 is formed in the second bonding film 210 using the same material as the first alignment mark 120. For example, a second dielectric material 222 and a second conductive material 224 are filled into a plurality of second grooves (not shown) in the second bonding film 210. Next, a planarization process is performed on the second bonding film 210 to form the second alignment mark 220. The second alignment mark 220 includes a plurality of second patterns 225 separated from each other. More specifically, each of the second patterns 225 is formed by the second dielectric material 222 and the second conductive material 224 in each second groove. In other words, the second dielectric material 222 and the second conductive material 224 in each second groove define each of the second patterns 225. The following will be combined with Figure 4B The layout details of the second alignment mark 220 are further discussed.

[0112] In some embodiments, the first alignment mark 120 has a first axis C1, and the second alignment mark 220 has a second axis C2. More specifically, the first axis C1 is perpendicular to the top surface 110T of the first bonding film 110. Similarly, the second axis C2 is perpendicular to the top surface 210T of the second bonding film 210. Figure 2A As shown, before bonding the second package component 200 to the first package component 100, the first axis C1 of the first alignment mark 120 is aligned with the second axis C2 of the second alignment mark 220. Figure 2B After determining that the first axis C1 of the first alignment mark 120 coincides with the second axis C2 of the second alignment mark 220, the second package component 200 is moved toward the first package component 100, and the first bonding film 110 and the second bonding film 210 are bonded (e.g., brought into contact with each other). In this embodiment, the first axis C1 and the second axis C2 coincide with each other and serve as the alignment axis C. In some embodiments, the first alignment mark 120 at least partially overlaps the second alignment mark 220 in a vertical direction (e.g., parallel to the alignment axis C). The provision of the first and second alignment marks 120, 220 can reduce process time and costs for bonding the first and second package components 100, 200.

[0113] Figure 3 is a cross-sectional view showing a package structure 10 according to some embodiments of the present disclosure. It should be noted that the package structure 10 of this embodiment includes Figure 2B The same or similar elements or parts as those in the package structure 10 shown in FIG. These elements or parts will be marked with the same or similar reference numerals and will not be described in detail in the following paragraphs. Figure 3 As shown, the package structure 10 includes a first package component 100 and a second package component 200 , and the first package component 100 and the second package component 200 are bonded to each other via a first bonding film 110 and a second bonding film 220 . Figure 3 The embodiment shown is Figure 2B The embodiment shown differs in that the first pattern 125 and the second pattern 225 are formed without the first dielectric material 122 and the first conductive material 124 (or the second dielectric material 222 and the second conductive material 224). In other words, the first pattern 125 and the second pattern 225 can be formed by empty trenches (e.g., the first trench 115 or the second trench). However, the present disclosure is not limited thereto.

[0114] Figure 4A FIG. 1 is a top view schematically showing the first alignment mark 120 according to some embodiments of the present disclosure. Figure 4AAs shown, the first alignment mark 120 includes a plurality of sub-alignment marks 120A, 120B, 120C, and 120D, each including a set of first patterns 125A, 125B, 125C, and 125D. In some embodiments, for the sake of clarity, the sub-alignment mark 120A may be referred to as the "first sub-alignment mark 120A." Similarly, the sub-alignment mark 120B may be referred to as the "second sub-alignment mark 120B," the sub-alignment mark 120C may be referred to as the "third sub-alignment mark 120C," and the sub-alignment mark 120D may be referred to as the "fourth sub-alignment mark 120D." It should be noted that these ordinal numbers are provided to distinguish one from another, and do not indicate a priority order or relationship between the sub-alignment marks. In some embodiments, the sub-alignment marks 120A, 120B, 120C, and 120D may exist independently and serve as alignment marks, as long as their corresponding sub-alignment marks 220A, 220B, 220C, and 220D (the following paragraphs will combine Figure 4B For example, the first alignment mark 120 includes each of the sub-alignment marks 120A, 120B, 120C, and 120D. In some embodiments, the first alignment mark 120 may only include the sub-alignment mark 120C. However, the present disclosure is not limited thereto.

[0115] In some embodiments, in a top view (e.g. Figure 4A As shown in FIG. 1 , the first sub-alignment mark 120A of the first alignment mark 120 includes a plurality of first patterns 125A. For example, a first group of first patterns 125A are arranged along a first direction (e.g., parallel to the X-axis), and a second group of first patterns 125A are arranged along a second direction (e.g., parallel to the Y-axis). The second direction is substantially perpendicular to the first direction. Therefore, the first alignment mark 120 can be used to align two components of a package structure in two dimensions.

[0116] In addition, each of the first patterns 125A is divided into a first portion 125A1 and a second portion 125A2 connected to the first portion 125A1. However, the present disclosure is not limited to this. In some embodiments, the first portion 125A1 of the first pattern 125A may not be connected to the second portion 125A2 of the first pattern 125A. For example, the width of the first portion 125A1 and / or the second portion 125A2 ranges from approximately 0.1 μm to approximately 10 μm, but the present disclosure is not limited to this. The first portions 125A1 of the first pattern 125A are separated from each other by a first pitch PA1. The second portions 125A2 of the first pattern 125A are separated from each other by a second pitch PA2. The first pitch PA1 is different from the second pitch PA2. In some embodiments, a standard pattern 125AC is selected in the first set of first patterns 125A. More specifically, the standard pattern 125AC includes the first portion 125A1 and the second portion 125A2 aligned with each other in a second direction (e.g., a direction parallel to the Y-axis). In other words, one edge of the first portion 125A1 and the corresponding edge of the second portion 125A2 form a straight line in the standard pattern 125AC.

[0117] In some embodiments, in a top view (e.g. Figure 4A As shown in FIG. 1 , the first group of first patterns 125A are arranged symmetrically about the central axis. For example, the first patterns 125A are arranged symmetrically on opposite sides of the standard pattern 125AC. In some embodiments, in a top view (e.g., Figure 4A As shown in FIG. 1 , the first portion 125A1 and the second portion 125A2 of the first pattern 125A are both elongated, such as rectangular. However, the present disclosure is not limited thereto. Other regular or irregular shapes of the first pattern 125A are still possible and are within the scope of the present disclosure.

[0118] In the present embodiment, the first pitch PA1 is in the range of about 0.1 μm to about 10 μm, for example, about 2.0 μm. In addition, the second pitch PA2 is in the range of about 0.1 μm to about 10 μm, for example, about 2.1 μm. In some embodiments, the first pitch PA1 is different from (for example, shorter than) the second pitch PA2. In some embodiments, the difference between the first pitch PA1 and the second pitch PA2 is, for example, about 0.1 μm. However, the present disclosure is not limited to this. Other possible values of the difference between the first pitch PA1 and the second pitch PA2 are included in the scope of the present disclosure and are not listed one by one below. For example, the first pitch PA1 and the second pitch PA2 are interchangeable, so that in some embodiments the first pitch PA1 can be greater than the second pitch PA2. It should be noted that the difference between the first pitch PA1 and the second pitch PA2 can determine the resolution of the misalignment error (for example, the offset between the first alignment mark 120 and the second alignment mark 220). The following paragraphs will further explain how to determine the misalignment error.

[0119] In some embodiments, the second sub-alignment mark 120B of the first alignment mark 120 includes a plurality of first patterns 125B. It should be noted that, although the first patterns 125B are shown as an integral structure in the present embodiment, the present disclosure is not limited thereto. In other words, the first pattern 125B may include a first portion and a second portion that are not connected to each other. For example, the width of the first pattern 125B is in the range of about 0.1 μm to about 10 μm, but the present disclosure is not limited thereto. For example, the first group of first patterns 125B are arranged along a first direction (e.g., a direction parallel to the X-axis), and the second group of first patterns 125B are arranged along a second direction substantially perpendicular to the first direction (e.g., a direction parallel to the Y-axis). Therefore, the first alignment mark 120 can be used to align two elements of a package structure in two dimensions.

[0120] In addition, the first patterns 125B are separated by a first pitch PB1. In some embodiments, a standard pattern 125BC is selected from the first set of first patterns 125B. In some embodiments, in a top view (e.g. Figure 4A As shown in FIG. 1 , the first group of first patterns 125B are arranged symmetrically about a first axis (e.g., parallel to the Y axis). For example, the first patterns 125B are arranged symmetrically on opposite sides of the standard pattern 125BC. In some embodiments, in a top view (e.g., Figure 4A As shown in FIG. 1 , the first patterns 125B are all elongated, such as rectangular. For example, the first pattern 125B is a rectangle with a uniform length. However, the present disclosure is not limited thereto. Other regular or irregular shapes of the first pattern 125B are still possible and are included in the scope of the present disclosure. In some embodiments, in the top view (e.g. Figure 4AIn the present embodiment, the first pitch PB1 is in the range of about 0.1 μm to about 10 μm, for example, about 2.2 μm.

[0121] In some embodiments, the third sub-alignment mark 120C of the first alignment mark 120 includes a plurality of first patterns 125C. For example, a first group of first patterns 125C are arranged along a first direction (e.g., parallel to the X-axis), and a second group of first patterns 125C are arranged along a second direction substantially perpendicular to the first direction (e.g., parallel to the Y-axis). Therefore, the first alignment mark 120 can be used to align two components of a package structure in two dimensions.

[0122] In addition, each of the first patterns 125C is divided into a first portion 125C1 and a second portion 125C2 connected to the first portion 125C1. However, the present disclosure is not limited to this. In some embodiments, the first portion 125C1 of the first pattern 125C may not be connected to the second portion 125C2 of the first pattern 125C. For example, the width of the first portion 125C1 and / or the second portion 125C2 ranges from about 0.1 μm to about 10 μm, but the present disclosure is not limited to this. The first portions 125C1 of the first pattern 125C are separated by a first pitch PC1. The second portions 125C2 of the first pattern 125C are separated by a second pitch PC2. The first pitch PC1 is different from the second pitch PC2. In some embodiments, a standard pattern 125CC is selected in the first set of first patterns 125C. More specifically, the standard pattern 125CC includes a first portion 125C1 and a second portion 125C2 aligned with each other in a second direction (e.g., a direction parallel to the Y-axis). In other words, one edge of the first portion 125C1 and the corresponding edge of the second portion 125C2 form a straight line in the standard pattern 125CC.

[0123] In some embodiments, in a top view (e.g. Figure 4A As shown in FIG. 1 , the first group of first patterns 125C are arranged symmetrically about the central axis. For example, the first patterns 125C are arranged symmetrically on opposite sides of the standard pattern 125CC. In some embodiments, in a top view (e.g., Figure 4A As shown in FIG. 1 , the first portion 125C1 and the second portion 125C2 of the first pattern 125C are both elongated, such as rectangular. However, the present disclosure is not limited thereto. Other regular or irregular shapes of the first pattern 125C are still possible and are within the scope of the present disclosure.

[0124] In the present embodiment, the first spacing PC1 is in the range of about 0.1 μm to about 10 μm, for example, about 2.0 μm. In addition, the second spacing PC2 is in the range of about 0.1 μm to about 10 μm, for example, about 2.02 μm. In some embodiments, the first spacing PC1 is different from (for example, shorter than) the second spacing PC2. In some embodiments, the difference between the first spacing PC1 and the second spacing PC2 is, for example, about 0.02 μm. However, the present disclosure is not limited to this. Other possible values of the difference between the first spacing PC1 and the second spacing PC2 are included in the scope of the present disclosure and are not listed one by one below. For example, the first spacing PC1 and the second spacing PC2 are interchangeable, so that in some embodiments the first spacing PC1 can be greater than the second spacing PC2.

[0125] It should be noted that the difference between the first pitch PC1 and the second pitch PC2 can determine the resolution of misalignment errors (e.g., the offset between the first alignment mark 120 and the second alignment mark 220). Specifically, compared to the first pitch PA1 and the second pitch PA2, the first pitch PC1 and the second pitch PC2 are shorter, and thus can achieve higher resolution of misalignment errors. The following paragraphs will further explain how to determine misalignment errors.

[0126] In some embodiments, the fourth sub-alignment mark 120D of the first alignment mark 120 includes a first pattern 125D having a cross-shaped outline (eg, Figure 4A ). However, the present disclosure is not limited thereto. Other regular or irregular shapes of the first pattern 125D are still possible and included in the scope of the present disclosure. In some other embodiments, the fourth sub-alignment mark 120D of the first alignment mark 120 may include a plurality of first patterns 125D separated from each other.

[0127] Figure 4B FIG. 2 is a top view schematically showing the second alignment mark 220 according to some embodiments of the present disclosure. Figure 4BAs shown, the second alignment mark 220 includes a plurality of sub-alignment marks 220A, 220B, 220C, and 220D, each including a set of second patterns 225A, 225B, 225C, and 225D. In some embodiments, for the sake of clarity, the sub-alignment mark 220A can be referred to as the "first sub-alignment mark 220A." Similarly, the sub-alignment mark 220B can be referred to as the "second sub-alignment mark 220B," the sub-alignment mark 220C can be referred to as the "third sub-alignment mark 220C," and the sub-alignment mark 220D can be referred to as the "fourth sub-alignment mark 220D." It should be noted that these ordinal numbers are provided to distinguish one from another, and do not indicate a priority order or relationship between the sub-alignment marks. In some embodiments, the sub-alignment marks 220A, 220B, 220C and 220D can exist independently and serve as alignment marks, as long as their corresponding sub-alignment marks 120A, 120B, 120C and 120D (as described above) are Figure 4A For example, the second alignment mark 220 includes each of the sub-alignment marks 220A, 220B, 220C, and 220D. In some embodiments, the second alignment mark 220 may only include the sub-alignment mark 220C. However, the present disclosure is not limited thereto.

[0128] In some embodiments, in a top view (e.g. Figure 4B As shown in FIG. 1 , the first sub-alignment mark 220A of the second alignment mark 220 includes a plurality of second patterns 225A. For example, a first group of second patterns 225A are arranged along a first direction (e.g., parallel to the X-axis), and a second group of second patterns 225A are arranged along a second direction substantially perpendicular to the first direction (e.g., parallel to the Y-axis). Therefore, the second alignment mark 220 can be used to align two components of a package structure in two dimensions and corresponds to the first alignment mark 120.

[0129] In addition, each of the second patterns 225A is divided into a first portion 225A1 and a second portion 225A2 connected to the first portion 225A1. However, the present disclosure is not limited to this. In some embodiments, the first portion 225A1 of the second pattern 225A may not be connected to the second portion 225A2 of the second pattern 225A. For example, the width of the first portion 225A1 and / or the second portion 225A2 ranges from approximately 0.1 μm to approximately 10 μm, but the present disclosure is not limited to this. The first portions 225A1 of the second pattern 225A are separated by a second pitch PA2. The second portions 225A2 of the second pattern 225A are separated by a first pitch PA1. In some embodiments, a standard pattern 225AC is selected in the first set of second patterns 225A. More specifically, the standard pattern 225AC includes a first portion 225A1 and a second portion 225A2 aligned with each other in a second direction (e.g., a direction parallel to the Y-axis). That is, one edge of the first portion 225A1 and the corresponding edge of the second portion 225A2 form a straight line in the standard pattern 225AC.

[0130] In some embodiments, in a top view (e.g. Figure 4B As shown in FIG. 2 , the first set of second patterns 225A are arranged symmetrically about the central axis. For example, the second patterns 225A are arranged symmetrically on opposite sides of the standard pattern 225AC. In some embodiments, in a top view (e.g., Figure 4B As shown in FIG. 2 , the first portion 225A1 and the second portion 225A2 of the second pattern 225A are both elongated, such as rectangular. However, the present disclosure is not limited thereto. Other regular or irregular shapes of the second pattern 225A are still possible and are within the scope of the present disclosure.

[0131] In some embodiments, the second sub-alignment mark 220B of the second alignment mark 220 includes a plurality of second patterns 225B. For example, a first group of second patterns 225B are arranged along a first direction (e.g., parallel to the X-axis), and a second group of second patterns 225B are arranged along a second direction substantially perpendicular to the first direction (e.g., parallel to the Y-axis). Therefore, the second alignment mark 220 can be used to align two components of a package structure in two dimensions and corresponds to the first alignment mark 120.

[0132] Furthermore, each of the second patterns 225B includes a first portion 225B1 and a second portion 225B2. For example, the width of the first portion 225B1 and / or the second portion 225B2 ranges from approximately 0.1 μm to approximately 10 μm, but the present disclosure is not limited thereto. In some embodiments, the first portions 225B1 of the second pattern 225B are separated by a second pitch PB2, and the second portions 225B2 of the second pattern 225B are separated by a third pitch PB3. In some embodiments, the second pitch PB2 is different from the third pitch PB3. In this embodiment, the second pitch PB2 ranges from approximately 0.1 μm to approximately 10 μm, for example, approximately 2.1 μm. The third pitch PB3 ranges from approximately 0.1 μm to approximately 10 μm, for example, approximately 2.0 μm. For example, the relationship between the first pitch PB1, the second pitch PB2, and the third pitch PB3 is reversible, such that in some embodiments, the first pitch PB1 can be shorter than the second pitch PB2 and / or the third pitch PB3. In some embodiments, a standard pattern 225BC is selected from the first set of second patterns 225B. In some embodiments, in a top view (e.g. Figure 4B As shown in FIG. 1 , the first set of second patterns 225B are arranged symmetrically about a first axis (e.g., parallel to the Y axis). For example, the second patterns 225B are symmetrically arranged on opposite sides of the standard pattern 225BC. In some embodiments, the first portion 225B1 and the second portion 225B2 of the standard pattern 225BC are connected to each other for easy viewing. In some embodiments, in a top view (e.g., Figure 4B As shown, the first portion 225B1 and / or the second portion 225B2 of the second pattern 225B are both elongated, such as rectangular. However, the present disclosure is not limited thereto. Other regular or irregular shapes of the second pattern 225B are possible and are within the scope of the present disclosure.

[0133] In some embodiments, the third sub-alignment mark 220C of the second alignment mark 220 includes a plurality of second patterns 225C. For example, a first group of second patterns 225C are arranged along a first direction (e.g., parallel to the X-axis), and a second group of second patterns 225C are arranged along a second direction substantially perpendicular to the first direction (e.g., parallel to the Y-axis). Therefore, the second alignment mark 220 can be used to align two components of a package structure in two dimensions and corresponds to the first alignment mark 120.

[0134] In addition, each of the second patterns 225C is divided into a first portion 225C1 and a second portion 225C2 connected to the first portion 225C1. However, the present disclosure is not limited to this. In some embodiments, the first portion 225C1 of the second pattern 225C may not be connected to the second portion 225C2 of the second pattern 225C. For example, the width of the first portion 225C1 and / or the second portion 225C2 ranges from about 0.1 μm to about 10 μm, but the present disclosure is not limited to this. The first portions 225C1 of the second pattern 225C are separated by a second pitch PC2. The second portions 225C2 of the second pattern 225C are separated by a first pitch PC1. In some embodiments, a standard pattern 225CC is selected in the first group of second patterns 225C. More specifically, the standard pattern 225CC includes a first portion 225C1 and a second portion 225C2 aligned with each other in a second direction (e.g., a direction parallel to the Y-axis). That is, one edge of the first portion 225C1 and the corresponding edge of the second portion 225C2 form a straight line in the standard pattern 225CC.

[0135] In some embodiments, in a top view (e.g. Figure 4B As shown in FIG. 2 ), the first set of second patterns 225C are arranged symmetrically about the central axis. For example, the second patterns 225C are symmetrically arranged on opposite sides of the standard pattern 225CC. In some embodiments, in a top view (e.g., Figure 4B As shown in FIG. 2 , the first portion 225C1 and the second portion 225C2 of the second pattern 225C are both elongated, such as rectangular. However, the present disclosure is not limited thereto. Other regular or irregular shapes of the second pattern 225C are still possible and are within the scope of the present disclosure.

[0136] In some embodiments, the fourth sub-alignment mark 220D of the second alignment mark 220 includes a plurality of second patterns 225D, each of which has a rectangular outline (eg, Figure 4B ). However, the present disclosure is not limited thereto. Other regular or irregular shapes of the second pattern 225D are still possible and included in the scope of the present disclosure.

[0137] Although the detailed structures of the first alignment mark 120 and the second alignment mark 220 are described above, the present disclosure is not limited thereto. It should be noted that the structures of the first alignment mark 120 and the second alignment mark 220 can be interchanged. For example, the second alignment mark 220 can be formed on the top of the entire package structure 10, while the first alignment mark 120 can be formed on the bottom of the entire package structure 10.

[0138] Figure 5FIG. 1 is a top view schematically showing the first alignment mark 120 and the second alignment mark 220 according to some embodiments of the present disclosure. Figure 5 As shown, the first alignment mark 120 is aligned with and overlaps with the second alignment mark 220. More specifically, the first sub-alignment mark 120A of the first alignment mark 120 is aligned with and at least partially overlaps with the first sub-alignment mark 220A of the second alignment mark 220. Similarly, the second sub-alignment mark 120B of the first alignment mark 120 is aligned with and at least partially overlaps with the second sub-alignment mark 220B of the second alignment mark 220. The third sub-alignment mark 120C of the first alignment mark 120 is aligned with and at least partially overlaps with the third sub-alignment mark 220C of the second alignment mark 220. In addition, in the top view, the fourth sub-alignment mark 120D of the first alignment mark 120 is aligned with and separated from the fourth sub-alignment mark 220D of the second alignment mark 220. The following will refer to Figures 6A to 8B Details of the alignment between the first alignment mark 120 and the second alignment mark 220 are discussed further.

[0139] As described above, various alignment marks are provided. It should be noted that it is not necessary to include all of the above-mentioned types of alignment marks, and one or more alignment marks described in the present disclosure can be selected to align the package structure 10.

[0140] Figures 6A to 6C FIG. 1 is a top view schematically showing the first alignment mark 120 and the second alignment mark 220 according to some embodiments of the present disclosure. Figure 6A As shown, the first sub-alignment mark 120A of the first alignment mark 120 is aligned with the first sub-alignment mark 220A of the second alignment mark 220. More specifically, the standard pattern 125AC of the first sub-alignment mark 120A is substantially overlapped with the standard pattern 225AC of the first sub-alignment mark 220A. Figure 6A ), a corresponding pair of first and second patterns 125A and 225A may have a rectangular outline. More specifically, a first portion 125A1 of the first pattern 125A overlaps with a first portion 225A1 of the second pattern 225A, and a second portion 125A2 of the first pattern 125A overlaps with a second portion 225A2 of the second pattern 225A.

[0141] like Figure 6BAs shown, when the first sub-alignment mark 120A of the first alignment mark 120 is misaligned with the first sub-alignment mark 220A of the second alignment mark 220, a pair of misalignment features MF1 can be observed on opposite sides of the first sub-alignment mark 120A (and the first sub-alignment mark 220A). Specifically, the misalignment feature MF1 can be identified as an interference pattern formed by the light signal passing through the varying spacing between the alignment marks 120 and 220 on the first package component 100 and the second package component 200. Therefore, the misalignment error can be determined based on the position of the misalignment feature MF1 and the spacing difference between the first pattern 125A and the second pattern 225A. For example, the resolution of the misalignment error can be approximately 50nm, but the present disclosure is not limited to this. More specifically, the resolution of the misalignment error can be determined as the spacing difference between the spacing PA1 and the spacing PA2. In some embodiments, the resolution of the misalignment error can be in the range of about 1nm to about 200nm. In summary, the misalignment error can be determined by the following formula:

[0142] Misalignment error = resolution * optical signal reversal point

[0143] In some embodiments, the reversal point of the optical signal can be identified as the two elongated patterns that are most aligned and have the widest spacing therebetween.Therefore, the misalignment error can be quickly obtained and the risk of miscalculating the misalignment error can be reduced.

[0144] In some embodiments, misalignment error can be determined by identifying the centers of the first sub-alignment mark 120A and the first sub-alignment mark 220A and calculating the overlap (or misalignment) between the centers of the first sub-alignment mark 120A and the first sub-alignment mark 220A. Specifically, the center of the first sub-alignment mark 120A can be identified by averaging the positions of the centers of the first patterns 125A. For example, this embodiment shows 13 first patterns 125A, and the center positions of these first patterns 125A are averaged to obtain the average center position of the first sub-alignment mark 120A. Similarly, the average center position of the first sub-alignment mark 220A can be obtained in the same manner.

[0145] In some embodiments, the misalignment error may be determined by the following formula:

[0146] Misalignment error = number of first patterns 125A or second patterns 225A * pitch difference between first patterns 125A and second patterns 225A (ie, pitch difference between pitch PA1 and pitch PA2) - pitch difference / 2

[0147] Therefore, the misalignment error can be quickly obtained and the risk of miscalculating the misalignment error can be reduced. In some embodiments, the number of first patterns 125A or second patterns 225A on each side ranges from 10 to 100.

[0148] like Figure 6C As shown, the first portion 125A1 of the first pattern 125A may not be connected to the second portion 125A2 of the first pattern 125A. Similarly, the first portion 225A1 of the second pattern 225A may not be connected to the second portion 225A2 of the second pattern 225A. In this way, the design of the first pattern 125A and the second pattern 225A can be changed without reducing the resolution of the misalignment error.

[0149] 7A to 7B FIG. 1 shows a schematic top view of a first alignment mark 120 and a second alignment mark 220 according to some embodiments of the present disclosure. Figure 7A As shown, the second sub-alignment mark 120B of the first alignment mark 120 is aligned with the second sub-alignment mark 220B of the second alignment mark 220. More specifically, the standard pattern 125BC of the second sub-alignment mark 120B substantially overlaps with the standard pattern 220BC of the second sub-alignment mark 220B. In some embodiments, the length of the standard pattern 125BC of the first pattern 125B is different from the length of the standard pattern 225BC of the second pattern 225B in a direction parallel to the edge of the standard pattern 125BC of the first pattern 125B (e.g., the Y direction). For example, the length of the first pattern 125B in the Y direction is different from (e.g., greater than or less than) the length of the second pattern 225B in the Y direction. In some embodiments, the height differences D1 and D2 between the first pattern 125B and the second pattern 225B are each in a range of approximately 0.1 μm to approximately 10 μm, but the present disclosure is not limited thereto. In some embodiments, height differences D1 and D2 may also exist between the first pattern 125A and the second pattern 225A or between the first pattern 125C and the second pattern 225C. The height differences D1 and D2 may help identify the first alignment mark 120 and the second alignment mark 220, thereby reducing the risk of misalignment.

[0150] like Figure 7BAs shown, the second sub-alignment mark 120B of the first alignment mark 120 is misaligned with the second sub-alignment mark 220B of the second alignment mark 220. However, the misalignment error can be determined based on the positions of the standard patterns 120BC and 220BC and the spacing difference between the first pattern 125B and the second pattern 225B. For example, the resolution of the misalignment error can be in the range of about 100nm to about 200nm, but the present disclosure is not limited thereto. More specifically, the resolution of the misalignment error can be determined as the spacing difference between the spacing PB1 and the spacing PB2 (or the spacing difference between the spacing PB1 and the spacing PB3). That is, multiple resolutions can be obtained from the first pattern 125B and the second pattern 225B. In some embodiments, the resolution of the misalignment error can be in the range of about 1nm to about 200nm. In summary, the misalignment error can be determined by the following formula:

[0151] Misalignment error = resolution * optical signal reversal point

[0152] In some embodiments, the reversal point of the optical signal can be identified as the two elongated patterns that are most aligned and have the widest spacing therebetween.Therefore, the misalignment error can be quickly obtained and the risk of miscalculating the misalignment error can be reduced.

[0153] Figures 8A to 8B FIG. 1 shows a schematic top view of a first alignment mark 120 and a second alignment mark 220 according to some embodiments of the present disclosure. Figure 8A As shown, the third sub-alignment mark 120C of the first alignment mark 120 is aligned with the third sub-alignment mark 220C of the second alignment mark 220. More specifically, the standard pattern 125CC of the third sub-alignment mark 120C is substantially overlapped with the standard pattern 220CC of the third sub-alignment mark 220C. Figure 8A As shown), a pair of corresponding first patterns 125C and second patterns 225C may have a rectangular outline.

[0154] like Figure 8BAs shown, when the third sub-alignment mark 120C of the first alignment mark 120 is misaligned with the third sub-alignment mark 220C of the second alignment mark 220, a pair of misalignment features MF2 can be observed on opposite sides of the third sub-alignment mark 120C (and the third sub-alignment mark 220C). Specifically, the misalignment feature MF2 can be identified as an interference pattern formed by the light signal passing through the varying spacing between the alignment marks 120 and 220 on the first package component 100 and the second package component 200. Therefore, the misalignment error can be determined based on the position of the misalignment feature MF2 and the spacing difference between the first pattern 125C and the second pattern 225C. For example, the resolution of the misalignment error can be about 10nm, but the present disclosure is not limited to this. More specifically, the resolution of the misalignment error can be determined as the spacing difference between the spacing PC1 and the spacing PC2. In some embodiments, the resolution of the misalignment error can be in the range of about 1nm to about 200nm. In summary, the misalignment error can be determined by the following formula:

[0155] Misalignment error = resolution * optical signal reversal point

[0156] In some embodiments, the reversal point of the optical signal can be identified as the two elongated patterns that are most aligned and have the widest spacing therebetween.Therefore, the misalignment error can be quickly obtained and the risk of miscalculating the misalignment error can be reduced.

[0157] Figure 9 is a cross-sectional view illustrating a package structure 20 according to some embodiments of the present disclosure. For example, the first package component 300 includes a semiconductor substrate, including, for example, an active layer of doped or undoped silicon or a semiconductor-on-insulator (SOI) substrate. In some embodiments, the first package component 300 includes other semiconductor materials, such as germanium, compound semiconductors (including silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and indium antimonide), alloy semiconductors (including SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and GaInAsP), or combinations thereof. Other substrates, such as multilayer substrates or gradient substrates, may also be used.

[0158] In some embodiments, an interconnect structure 315 is formed in the first package component 300. In some embodiments, the interconnect structure 315 includes a plurality of through-silicon via (TSV) structures 310, a plurality of metallization patterns 312, and a plurality of conductive features 314. In some embodiments, the TSV structure 310 is formed in the first package component 300, and the dielectric layer 302 is formed on the first package component 300. However, the present disclosure is not limited in this regard. In some other embodiments, the dielectric layer 302 may be omitted, and the TSV structure 310 may be entirely located in the first package component 300.

[0159] In some embodiments, dielectric layer 302 includes one or more sub-dielectric layers formed of materials such as silicon dioxide (SiO2), phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG), and undoped silicate glass (USG). In some embodiments, dielectric layer 302 is formed by, for example, spin coating, lamination, or chemical vapor deposition (CVD).

[0160] In some embodiments, the formation of the TSV structure 310 includes forming a plurality of trenches in the first package component 300. In some embodiments, the trenches extend into the first package component 300 and penetrate the dielectric layer 302 (if present) to electrically and physically couple to the metallization pattern 312 above. In some other embodiments, the TSV structure 310 may have a rectangular profile in a cross-sectional view. In some embodiments, the TSV structure 310 is formed of tungsten (W), cobalt (Co), nickel (Ni), copper (Cu), silver (Ag), gold (Au), aluminum (Al), any other suitable conductive material, or a combination thereof. However, the present disclosure is not limited thereto.

[0161] The metallization pattern 312 and the conductive features 314 are surrounded by a dielectric layer 304 for proper insulation, thereby reducing the possibility of forming a short circuit. In some embodiments, the dielectric layer 304 includes one or more sub-dielectric layers formed of materials such as silicon dioxide (SiO2), phosphosilicate glass (PSG), borosilicate glass (BSG), boron-doped phosphosilicate glass (BPSG), and undoped silicate glass (USG). In some embodiments, the dielectric layer 304 is formed, for example, by spin coating, lamination, chemical vapor deposition (CVD), and the like. In some embodiments, the dielectric layer 304 is formed using the same material or method as the dielectric layer 302. However, the present disclosure is not limited thereto. In some embodiments, the dielectric layer 304 is formed using a material or method different from that of the dielectric layer 302.

[0162] In some embodiments, one or more devices (not separately shown) are formed in the first package component 300 or the overlying dielectric layers 302, 304 and are electrically connected to the TSV structure 310, the metallization pattern 312, and / or the conductive feature 314. In some embodiments, the device is an active device (e.g., a transistor, a diode, etc.), a capacitor, a resistor, etc. For example, according to some embodiments of the present disclosure, the device is a metal-oxide-semiconductor field-effect transistor (MOSFET).

[0163] In some embodiments, the metallization pattern 312 includes metal lines and the conductive features 314 include vias formed in the dielectric layer 304. For example, the metallization pattern 312 and / or the conductive features 314 include a conductive material such as tungsten (W), cobalt (Co), nickel (Ni), copper (Cu), silver (Ag), gold (Au), aluminum (Al), any other suitable conductive material, or any combination thereof. In some embodiments, the TSV structure 310, the metallization pattern 312, and / or the conductive features 314 are formed of the same material. In some other embodiments, the TSV structure 310, the metallization pattern 312, and / or the conductive features 314 are formed of different materials.

[0164] Thus, TSV structure 310 is electrically connected to metallization pattern 312 and conductive feature 314 to form a conductive path to the external environment (e.g., another semiconductor die or an external device). For example, when the device in first package component 300 is a transistor, TSV structure 310 can couple to the gate or source / drain region of the transistor. The source / drain region can be referred to individually or collectively as a source or drain, depending on the context.

[0165] In addition, a bonding film 320 is formed over the first package component 300 for the bonding process. For example, the material of the bonding film 320 includes SiON, SiO2, any other suitable material, or a combination thereof. In some embodiments, a plurality of bonding pads 322 are formed in the bonding film 320. For example, the bonding pads 322 include a conductive material, such as tungsten (W), cobalt (Co), nickel (Ni), copper (Cu), silver (Ag), gold (Au), aluminum (Al), any other suitable conductive material, or a combination thereof. In some embodiments, the bonding pads 322 are formed corresponding to the second package component 400. However, the present disclosure is not limited thereto. In some embodiments, a first alignment mark 330 may be formed in the bonding film 320 and adjacent to the bonding pad 322. The first alignment mark 330 may be, for example, the second alignment mark 220, which includes one or more sub-alignment marks 220A to 220D shown in the present disclosure. As described above, the sub-alignment marks 220A, 220B, 220C and 220D can exist independently and serve as alignment marks as long as their corresponding sub-alignment marks 120A, 120B, 120C and 120D exist. Figures 1A to 1D All possible registration marks formed by the methods shown are considered within the scope of this disclosure.

[0166] In some embodiments, the second package component 400 is bonded to the first package component 300. For example, the second package component 400 may be a device die, a package encapsulating a device die, a system-on-chip (SoC) die including multiple device dies packaged as a system, etc. The second package component 400 may be or include a logic die, a memory die, an input / output die, an integrated passive device (IPD), etc., or a combination thereof. For example, the logic device die in the second package component 400 may be a central processing unit (CPU) die, a graphics processing unit (GPU) die, a mobile application die, a microcontroller unit (MCU) die, a baseband (BB) die, an application processor (AP) die, etc. The memory die in the second package component 400 may include a static random access memory (SRAM) die, a dynamic random access memory (DRAM) die, etc. The second package component 400 may include a semiconductor substrate and an interconnect structure, which are not separately shown in this embodiment.

[0167] In addition, another bonding film 420 is formed on the second package component 400 for use in the bonding process. For example, the material of the bonding film 420 includes SiON, SiO2, any other suitable material, or a combination thereof. In some embodiments, the material of the bonding film 420 is the same as the material of the bonding film 320. Although two bonding films (e.g., the bonding film 320 and the bonding film 420) are shown in this disclosure, it should be understood that the present disclosure may also employ one or more (two or more) bonding films.

[0168] In some embodiments, a plurality of bonding pads 422 are formed in the bonding film 420. For example, the bonding pads 422 include a conductive material, such as tungsten (W), cobalt (Co), nickel (Ni), copper (Cu), silver (Ag), gold (Au), aluminum (Al), any other suitable conductive material, or a combination of the foregoing. In some embodiments, the bonding pads 422 are each aligned with the bonding pad 322 above the first package component 300 to form an electrical connection between the second package component 400 and the interconnect structure 315. In some embodiments, a second alignment mark 430 may be formed. The second alignment mark 430 may be, for example, the first alignment mark 120, which includes one or more of the sub-alignment marks 120A-120D shown in the present disclosure. As described above, the sub-alignment marks 120A, 120B, 120C, and 120D may exist independently and serve as alignment marks as long as their corresponding sub-alignment marks 220A, 220B, 220C, and 220D exist. However, through Figures 1A to 1D All possible alignment marks formed by the method shown are considered within the scope of the present disclosure. In some embodiments, the second alignment mark 430 is aligned with the first alignment mark 330 to facilitate the bonding process.

[0169] In some embodiments, a plurality of bump structures 360 are formed on the exposed TSV structures 310. That is, the bump structures 360 are formed on the first package component 300 and cover the exposed surfaces of the TSV structures 310. In some embodiments, the bump structures 360 may include controlled collapse chip connection (C4) bumps, solder bumps, copper bumps, micro bumps, bumps formed using electroless nickel-electroless palladium-immersion gold (ENEPIG) technology, ball grid array (BGA) bumps, copper pillars, and the like.

[0170] Figure 10 FIG2 shows a cross-sectional view of a package structure 30 according to some embodiments of the present disclosure. It should be noted that the package structure 30 of this embodiment may include Figure 9 The same or similar elements as those in the package structure 20 are shown. These elements are represented by the same or similar reference numerals and will not be described in detail in the following paragraphs. Figure 10 As shown, the package structure 30 includes a first package component 300 , an interconnect structure 315 in the first package component 300 , and a second package component 400 . The second package component 400 is bonded onto the first package component 300 via a plurality of bonding films 320 , 340 .

[0171] In some embodiments, a third package component 500 is bonded to the first package component 300. For example, the third package component 500 may be a device die, a package encapsulating a device die, a system-on-chip (SoC) die including multiple device dies packaged as a system, etc. The third package component 500 may be or include a logic die, a memory die, an input / output die, an integrated passive device (IPD), etc., or a combination thereof. For example, the logic device die in the third package component 500 may be a central processing unit (CPU) die, a graphics processing unit (GPU) die, a mobile application die, a microcontroller unit (MCU) die, a baseband (BB) die, an application processor (AP) die, etc. The memory die in the third package component 500 may include a static random access memory (SRAM) die, a dynamic random access memory (DRAM) die, etc. The third package component 500 may include a semiconductor substrate and interconnect structures, which are not separately shown in this embodiment.

[0172] In addition, another bonding film 520 is formed on the third package component 500 for use in the bonding process. For example, the material of the bonding film 520 includes SiON, SiO2, any other suitable material, or a combination thereof. In some embodiments, the material of the bonding film 520 is the same as the material of the bonding film 320. Although two bonding films (e.g., the bonding film 320 and the bonding film 520) are shown in this disclosure, it should be understood that the present disclosure may also employ one or more (two or more) bonding films.

[0173] In some embodiments, a plurality of bonding pads 522 are formed in bonding film 520. For example, bonding pads 522 include a conductive material such as tungsten (W), cobalt (Co), nickel (Ni), copper (Cu), silver (Ag), gold (Au), aluminum (Al), any other suitable conductive material, or any combination thereof. In some embodiments, bonding pads 522 are aligned with bonding pads 322 on first package component 300 to form an electrical connection between third package component 500 and interconnect structure 315.

[0174] In some embodiments, the third alignment mark 530 can be formed in the bonding film 520 and adjacent to the bonding pad 522. The third alignment mark 530 can be, for example, the first alignment mark 120, which includes one or more of the sub-alignment marks 120A-120D shown in the present disclosure. As described above, the sub-alignment marks 120A, 120B, 120C and 120D can exist independently and serve as alignment marks as long as their corresponding sub-alignment marks 220A, 220B, 220C and 220D exist. However, by Figures 1A to 1DAll possible alignment marks formed by the illustrated method are contemplated within the scope of this disclosure. In some embodiments, third alignment mark 530 is aligned with first alignment mark 330 to facilitate the bonding process. In some embodiments, third alignment mark 530 is different from second alignment mark 430 to reduce the risk of incorrectly mounting third package component 500 and / or second package component 400.

[0175] As described above, the present disclosure relates to a package structure and a method for manufacturing the same. The package structure includes a first alignment mark and a second alignment mark corresponding to each other. Each of the first alignment mark and the second alignment mark includes a first group and a second group extending in two directions. Therefore, two-dimensional (2D) alignment can be achieved. In addition, since a plurality of overlapping sub-alignment marks are provided in the first alignment mark and the second alignment mark, different alignment error resolutions can be obtained during the assembly of the package structure. By setting a plurality of sub-alignment marks, the alignment error can be double-checked.

[0176] According to some embodiments, a packaging structure is provided, comprising a first bonding film formed on a first packaging component and a first alignment mark formed in the first bonding film. The first alignment mark comprises a plurality of first patterns separated from each other. The packaging structure comprises a second bonding film formed on a second packaging component and bonded to the first bonding film, and a second alignment mark formed in the second bonding film. The second alignment mark comprises a plurality of second patterns separated from each other, and the first pattern overlaps with the second pattern. In a top view, each of the first patterns is divided into a first part and a second part, the first part of the first pattern is separated by a first spacing, the second part of the first pattern is separated by a second spacing, and the first spacing is different from the second spacing.

[0177] In some embodiments, a first group of first patterns is arranged along a first direction, and a second group of first patterns is arranged along a second direction perpendicular to the first direction.

[0178] In some embodiments, in a top view, the first group of first patterns are arranged symmetrically about a central axis.

[0179] In some embodiments, in a top view, each of the second patterns is divided into a first portion and a second portion, the first portion of the second pattern overlaps with the first portion of the first pattern and is spaced apart by a second interval.

[0180] In some embodiments, the second portion of the second pattern overlaps with the second portion of the first pattern and is separated by a first interval.

[0181] In some embodiments, in a top view, both the first portion and the second portion of the first pattern are elongated.

[0182] In some embodiments, each of the first patterns includes a dielectric layer disposed within the first bonding film and a metal layer disposed within the first bonding film, such that the dielectric layer is disposed between the metal layer and the first bonding film, and a top surface of the metal layer is flush with a top surface of the first bonding film.

[0183] According to some embodiments, a method for manufacturing a packaging structure is provided, comprising forming a first bonding film on a first packaging component. The method comprises forming a first alignment mark in the first bonding film. The first alignment mark comprises a plurality of first patterns separated from each other. The method comprises forming a second bonding film on a second packaging component. The method comprises forming a second alignment mark in the second bonding film. The second alignment mark comprises a plurality of second patterns separated from each other. The method comprises moving the first packaging component or the second packaging component to align the first alignment mark with the second alignment mark. The method comprises determining whether the first alignment mark is aligned with the second alignment mark by determining whether a plurality of edges of a standard pattern in the first pattern coincide with a plurality of edges of a standard pattern in the second pattern. The method comprises bonding the second packaging component to the first packaging component after determining that the first alignment mark is aligned with the second alignment mark.

[0184] In some embodiments, forming the first alignment mark includes symmetrically arranging the first pattern on opposite sides of the standard pattern.

[0185] In some embodiments, forming the first alignment mark includes providing a plurality of first portions of a first pattern spaced apart at a first pitch in a top view; and providing a plurality of second portions of the first pattern spaced apart at a second pitch in a top view. The first pitch is different from the second pitch.

[0186] In some embodiments, a length of the standard pattern of the first pattern is different from a length of the standard pattern of the second pattern in a direction parallel to an edge of the standard pattern of the first pattern.

[0187] In some embodiments, the first patterns are identical to each other.

[0188] In some embodiments, one of the second patterns includes a first portion and a second portion spaced apart from the first portion.

[0189] According to some embodiments, a packaging structure is provided, comprising a first bonding film and a second bonding film. The first bonding film is located on a first packaging component. A first alignment mark is formed in the first bonding film, and the first alignment mark includes a plurality of first patterns separated from each other by a first spacing. The second bonding film is located on a second packaging component and bonded to the first bonding film. A second alignment mark is formed in the second bonding film, and the second alignment mark includes a plurality of second patterns separated from each other by a second spacing. The second packaging component is bonded to the first packaging component through the first bonding film and the second bonding film, and the first spacing is different from the second spacing.

[0190] In some embodiments, the first pattern is a rectangle of uniform length.

[0191] In some embodiments, one of the second patterns includes a first portion and a second portion spaced apart from the first portion.

[0192] In some embodiments, in a top view, one of the second patterns is partially exposed to one of the first patterns, and the one of the first patterns overlaps with the one of the second patterns.

[0193] In some embodiments, the package structure further includes a third bonding film located on the third package component. A third alignment mark is formed in the third bonding film, and the third alignment mark includes a plurality of third patterns. The third package component is bonded to the first package component via the first bonding film and the third bonding film.

[0194] In some embodiments, the profile of the third pattern is different from the profile of the second pattern.

[0195] In some embodiments, the first pattern is arranged symmetrically about a first axis, the second pattern is arranged symmetrically about a second axis, and the first axis is parallel to the second axis.

[0196] The features of many embodiments are summarized above so that those with ordinary knowledge in the technical field to which the present disclosure belongs can better understand the various embodiments of the present disclosure. Those with ordinary knowledge in the technical field to which the present disclosure belongs should understand that other processes and structures can be easily designed or changed based on the embodiments of the present disclosure to achieve the same purposes and / or achieve the same advantages as the embodiments introduced herein. Those with ordinary knowledge in the technical field to which the present disclosure belongs should also understand that these equivalent structures do not depart from the spirit and scope of the present disclosure. Various changes, substitutions and modifications can be made to the embodiments of the present disclosure without departing from the spirit and scope of the appended patent claims.

Claims

1. A packaging structure, characterized in that: include: a first bonding film formed on a first packaging component; a first alignment mark formed in the first bonding film, wherein the first alignment mark includes a plurality of first patterns separated from each other; a second bonding film formed on a second packaging component and bonded to the first bonding film; as well as a second alignment mark formed in the second bonding film, wherein the second alignment mark includes a plurality of second patterns separated from each other, and the plurality of first patterns overlap with the plurality of second patterns; In a top view, each of the multiple first patterns is divided into a first part and a second part, the multiple first parts of the multiple first patterns are separated by a first spacing, and the multiple second parts of the multiple first patterns are separated by a second spacing, and the first spacing is different from the second spacing.

2. The packaging structure according to claim 1, wherein: A first group of the plurality of first patterns is arranged along a first direction, and a second group of the plurality of first patterns is arranged along a second direction perpendicular to the first direction.

3. The packaging structure according to claim 2, wherein: In the top view, the first group of the plurality of first patterns is arranged symmetrically about a central axis.

4. The packaging structure according to claim 2, wherein: In the top view, each of the multiple second patterns is divided into a first part and a second part, the multiple first parts of the multiple second patterns overlap with the multiple first parts of the multiple first patterns and are separated by the second spacing, wherein the multiple second parts of the multiple second patterns overlap with the multiple second parts of the multiple first patterns and are separated by the first spacing.

5. The packaging structure according to claim 1, wherein: In the top view, the first portions and the second portions of the first patterns are all elongated.

6. A packaging structure, characterized in that: include: a first bonding film located on a first packaging component, wherein a first alignment mark is formed in the first bonding film, and the first alignment mark includes a plurality of first patterns separated from each other by a first interval; as well as a second bonding film located on a second packaging component and bonded to the first bonding film, wherein a second alignment mark is formed in the second bonding film, and the second alignment mark includes a plurality of second patterns separated from each other by a second interval, The second packaging component is bonded to the first packaging component through the first bonding film and the second bonding film, and the first spacing is different from the second spacing.

7. The packaging structure according to claim 6, wherein: The plurality of first patterns are rectangles with the same length.

8. The packaging structure according to claim 6, wherein: One of the second patterns includes a first portion and a second portion separated from the first portion.

9. The packaging structure according to claim 6, wherein: In a top view, one of the second patterns is partially exposed to one of the first patterns, and the one of the first patterns overlaps with the one of the second patterns.

10. The packaging structure according to claim 6, wherein: The plurality of first patterns are arranged symmetrically about a first axis, the plurality of second patterns are arranged symmetrically about a second axis, and the first axis is parallel to the second axis.

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