Double-gas-inlet-channel gas mixing device and semiconductor thin film equipment

Abstract

The utility model discloses a double-gas-inlet-channel gas mixing device and semiconductor film equipment. The double-gas-inlet-channel gas mixing device comprises a gas distribution block, a plurality of gas inlet cavity channels, a plurality of mixing cavity channels, a plurality of first-stage gas distribution cavity channels and a plurality of second-stage gas distribution cavity channels. The gas distribution block is arranged in a disc shape; the plurality of gas inlet cavities are oppositely arranged in the upper layer of the gas distribution block and are used for allowing various gases to enter; a plurality of mixing cavity channels are oppositely arranged in the upper layer of the gas distribution block, and each mixing cavity channel is communicated with all the gas inlet cavity channels; the plurality of first-stage gas distribution cavity channels are oppositely arranged in the lower layer of the gas distribution block and are communicated with the plurality of mixing cavity channels in a one-to-one correspondence manner; the multiple second-stage air distribution cavity channels are oppositely arranged in the lower air distribution block layer, and the first-stage air distribution cavity channel is at least communicated with the two second-stage air distribution cavity channels. According to the utility model, multiple gases are uniformly mixed once and twice, so that the mixing uniformity of the multiple gases is improved, and the overall performance of the film is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a double-inlet channel gas mixing device and a semiconductor thin film device. Background Art

[0002] In semiconductor thin-film equipment, multiple gases, such as reactant gases and carrier gases, are typically delivered to the reaction chamber. These reactant gases, typically two or more in number, need to be thoroughly mixed and evenly delivered to the reaction chamber to allow chemical reactions to occur on the heated substrate surface and deposit to form the desired thin film.

[0003] In existing gas mixing devices, a common problem is how to fully mix multiple gases and evenly distribute the mixed gases along the inlet path before transporting them into the reaction chamber. This is particularly critical to improving the overall performance of the film. Utility Model Content

[0004] The purpose of the utility model is to provide a dual-inlet channel gas mixing device and a semiconductor thin film device, aiming to solve the problem of how to fully mix multiple gases and evenly distribute the mixed gases along the inlet path and then transport them into the reaction chamber.

[0005] In order to solve the above technical problems, the purpose of the present invention is achieved through the following technical solutions: providing a dual-intake channel gas mixing device, comprising:

[0006] The gas distributor is arranged in a disc shape;

[0007] A plurality of air inlet channels are relatively arranged inside the upper layer of the gas distribution block and are used for the entry of a plurality of gases;

[0008] A plurality of mixing cavities are relatively arranged inside the upper layer of the air distribution block, and each mixing cavity is connected to all the air inlet cavities;

[0009] A plurality of first-level gas separation cavities are relatively arranged inside the lower layer of the gas separation block and are connected to the plurality of mixing cavities in a one-to-one correspondence;

[0010] A plurality of secondary air distribution channels are relatively arranged inside the lower layer of the air distribution block, and a primary air distribution channel is communicated with at least two secondary air distribution channels.

[0011] Furthermore, a plurality of air inlets are provided on the outer circumference of the air distribution block, and the plurality of air inlets correspond to the middle positions of the plurality of air inlet ducts respectively.

[0012] Furthermore, the air intake channel and the mixing channel are both arc-shaped, and are radially distributed in the circumferential direction around the center of the air separation block, and the air intake channel is located radially outside the mixing channel.

[0013] Furthermore, the air intake cavity and the mixing cavity are each provided with two symmetrical ones, and the arc angle range of the air intake cavity and the mixing cavity is 70 to 110 degrees.

[0014] Furthermore, the plurality of mixing cavities and the plurality of first-level gas-dividing cavities are symmetrically arranged, and the middle position of the mixing cavities is communicated with the middle position of the first-level gas-dividing cavities.

[0015] Furthermore, the shapes of the first-level air distribution channel and the second-level air distribution channel are both arc-shaped, and the second-level air distribution channel is located radially outside the first-level air distribution channel.

[0016] Furthermore, both ends of each primary air distribution channel are respectively connected to the middle positions of two adjacent secondary air distribution channels, and both ends of each secondary air distribution channel are provided with air outlets.

[0017] Furthermore, a plurality of arc-shaped grooves are provided on the upper and lower surfaces of the gas separation block, and a sealing cover on each arc-shaped groove is provided with an arc-shaped seal, thereby forming the corresponding intake cavity, mixing cavity, first-level gas separation cavity and second-level gas separation cavity.

[0018] Furthermore, the air inlet cavity, the mixing cavity, the first-stage air distribution cavity and the second-stage air distribution cavity are sequentially connected through the opened channels.

[0019] An embodiment of the present invention further provides a semiconductor thin film device, comprising the dual-inlet channel gas mixing device as described above.

[0020] The beneficial effects of the present invention are as follows: one gas can enter a corresponding air inlet channel, while multiple gases can enter through multiple air inlet channels and reach all mixing channels for mixing. The mixed gas can enter the primary air distribution channel for primary mixing, and then enter multiple secondary air distribution channels from the primary air distribution channel for secondary mixing. Each mixing channel and air distribution channel is independent. After primary and secondary mixing, the uniformity of the mixing of multiple gases can be improved, thereby improving the overall performance of the film. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0022] Figure 1 A schematic diagram of the three-dimensional structure of the dual-inlet channel gas mixing device provided in an embodiment of the present invention from an upper perspective (with an arc-shaped seal).

[0023] Figure 2 This is a schematic diagram of the three-dimensional structure of the dual-inlet channel gas mixing device provided by an embodiment of the present invention from an upper perspective (without arc seals).

[0024] Figure 3 This is a schematic diagram of the three-dimensional structure of the dual-inlet channel gas mixing device provided by an embodiment of the present invention from a lower perspective (with an arc-shaped seal).

[0025] Figure 4 This is a schematic diagram of the three-dimensional structure of the dual-inlet channel gas mixing device provided by an embodiment of the present invention from a lower perspective (without arc seals).

[0026] Description of the symbols in the figure:

[0027] 1. Air distribution block; 11. First air inlet; 12. Second air inlet; 2. Air inlet cavity; 3. Mixing cavity; 4. First-stage air distribution cavity; 5. Second-stage air distribution cavity; 6. Arc seal. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0029] It will be understood that when used in this specification and the appended claims, the terms “comprises” and “comprising” indicate the presence of described features, integers, steps, operations, elements and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0030] It should also be understood that the terms used in this utility model specification are only for the purpose of describing specific embodiments and are not intended to limit the utility model. As used in this utility model specification and the appended claims, the singular forms "a", "an" and "the" are intended to include plural forms unless the context clearly indicates otherwise.

[0031] It should be further understood that the term “and / or” used in the present specification and the appended claims refers to any and all possible combinations of one or more of the associated listed items, and includes these combinations.

[0032] See also Figures 1 to 4 The present invention provides a dual-inlet channel gas mixing device, comprising:

[0033] The gas distributor 1 is arranged in a disc shape;

[0034] Multiple air inlet channels 2 are relatively arranged inside the upper layer of the gas distribution block 1 and are used for the entry of multiple gases;

[0035] Multiple mixing cavities 3 are relatively arranged inside the upper layer of the gas distribution block 1, and each mixing cavity 3 is connected to all the air inlet cavities 2;

[0036] Multiple first-level gas distribution channels 4 are relatively arranged inside the lower layer of the gas distribution block 1 and are connected to the multiple mixing channels 3 in a one-to-one correspondence;

[0037] A plurality of secondary air distribution channels 5 are relatively arranged inside the lower layer of the air distribution block 1 , and the primary air distribution channel 4 is connected to at least two secondary air distribution channels 5 .

[0038] In this embodiment, the gas separator block 1 can be a disc-shaped structure of a certain thickness. The upper and lower layers of the gas separator block 1 refer to the top and bottom of the gas separator block 1. Multiple gas inlet channels 2 and multiple mixing channels 3 are both provided within the upper layer of the gas separator block 1. One gas can enter one corresponding gas inlet channel 2, and multiple gases can enter multiple gas inlet channels 2 separately and reach all mixing channels 3 for mixing. After mixing in the mixing channel 3, the multiple gases can enter the first-level gas separator channel 4 for primary mixing. After primary mixing in the first-level gas separator channel 4, they can enter the multiple second-level gas separator channels 5 for secondary mixing. Each mixing channel 3 and gas separator channel is independent. After primary and secondary mixing, the mixing uniformity of the multiple gases can be improved, thereby improving the overall performance of the film.

[0039] In one embodiment, a plurality of air inlets are provided on the outer circumference of the air distribution block 1 , and the plurality of air inlets correspond to and are connected to the middle positions of the plurality of air inlet channels 2 .

[0040] In this embodiment, one air inlet corresponds to one air inlet channel 2, and the air inlet is used to connect to an external gas source to achieve gas delivery; Figure 1 and Figure 2 As shown in the figure, the mixing process of two gases is illustrated. Two air inlets are required for gas supply, such as the first air inlet 11 and the second air inlet 12. Connecting the air inlet to the middle of the air inlet channel 2 allows the gas to be divided to the two ends of the air inlet channel 2 after entering the air inlet channel 2, so as to facilitate communication with all mixing channels 3.

[0041] In one embodiment, the air intake channel 2 and the mixing channel 3 are both arc-shaped, and are radially distributed in the circumferential direction around the center of the air distributor block 1 , with the air intake channel 2 located radially outside the mixing channel 3 .

[0042] In this embodiment, the shapes of the air intake cavity 2 and the mixing cavity 3 are set to be arc-shaped, which can extend the path of the gas flow. The air intake cavity 2 is located radially outside the mixing cavity 3, so the path of the air intake cavity 2 can be designed to be relatively longer. For multiple gases that can undergo chemical reactions at room temperature, the encounter of the multiple gases can be delayed as much as possible.

[0043] See also Figure 1 and Figure 2 In some preferred embodiments, the air intake cavity 2 and the mixing cavity 3 are each provided with two symmetrical ones, and the arc angle range of the air intake cavity 2 and the mixing cavity 3 is 70 to 110 degrees.

[0044] In this preferred embodiment, the arc angles of the air intake channel 2 and the mixing channel 3 can be preferably 90 degrees, and the two ends of one air intake channel 2 are connected to one end of the two mixing channels 3, and the two ends of the other air intake channel are connected to the other end of the two mixing channels 3, so that the two air intake channels 2 and the two mixing channels 3 can be enclosed to form a ring path.

[0045] In this preferred embodiment, for each mixing cavity 3, two gases can enter the two ends of the mixing cavity 3, and the two gases flow from the two ends toward the middle of the mixing cavity 3, forming a counter-impact effect, so that the two gases can be better mixed.

[0046] In one embodiment, the plurality of mixing cavities 3 and the plurality of first-level gas distribution cavities 4 are symmetrically arranged, and the middle position of the mixing cavities 3 is communicated with the middle position of the first-level gas distribution cavities 4 .

[0047] In this embodiment, the middle position of the mixing chamber 3 is connected to the middle position of the first-level gas separation chamber 4. After the counteraction and mixing, the various gases enter the middle position of the first-level gas separation chamber 4 from the middle position of the mixing chamber 3. The various gases are diverted to the two ends of the first-level gas separation chamber 4 at the middle position of the first-level gas separation chamber 4. During the diversion process, the various gases can be mixed for the first time.

[0048] In this embodiment, based on the mutually symmetrical design of multiple mixing cavities 3 and multiple first-level gas separation cavities 4, multiple gases can first flow from the two ends of the mixing cavity 3 to the middle and enter the first-level gas separation cavity 4, and then flow from the middle to the two ends of the first-level gas separation cavity 4, so that the gas flow path is increased, thereby improving the effect of the first mixing.

[0049] In one embodiment, the first-stage gas distribution channel 4 and the second-stage gas distribution channel 5 are both arc-shaped, and the second-stage gas distribution channel 5 is located radially outside the first-stage gas distribution channel 4 .

[0050] In this embodiment, the shapes of the first-level gas separation cavity 4 and the second-level gas separation cavity 5 are set to be arc-shaped, which can extend the mixing path of multiple gases. Among them, the second-level gas separation cavity 5 is located radially outside the first-level gas separation cavity 4, so the number of second-level gas separation cavities 5 can be set to be larger. The gas in the first-level gas separation cavity 4 enters the second-level gas separation cavity 5 with a larger number and then undergoes secondary mixing. This layered and step-by-step gas separation method can make the mixed gas more evenly transported to the reaction chamber.

[0051] See also Figure 3 and Figure 4 In some preferred embodiments, both ends of each primary air distribution channel 4 are respectively connected to the middle positions of two adjacent secondary air distribution channels 5, and both ends of each secondary air distribution channel 5 are provided with air outlets.

[0052] In this preferred embodiment, two symmetrical first-level gas-dividing cavities 4 and four two-by-two symmetrical second-level gas-dividing cavities 5 are provided. Based on the design that the two ends of each first-level gas-dividing cavities 4 are respectively connected to the middle positions of the two adjacent second-level gas-dividing cavities 5, a variety of gases can first flow from the middle of the first-level gas-dividing cavities 4 to the two ends and enter the middle positions of the two second-level gas-dividing cavities 5. The gas flows from the middle position of the second-level gas-dividing cavities 5 to the two ends, and then is output from the air outlet holes at the two ends of the second-level gas-dividing cavities 5, which can increase the gas flow path and thus enhance the secondary mixing effect.

[0053] In one embodiment, a plurality of arc-shaped grooves are provided on the upper and lower surfaces of the gas distribution block 1, and a sealing cover on each arc-shaped groove is provided with an arc-shaped seal 6, thereby forming corresponding air intake ducts 2, mixing ducts 3, first-level gas distribution ducts 4 and second-level gas distribution ducts 5.

[0054] In this embodiment, the curvature and radial position of each arc-shaped groove can be designed according to the requirements of the air inlet cavity 2, the mixing cavity 3, the first-level air distribution cavity 4 and the second-level air distribution cavity 5. Each arc-shaped groove is encapsulated with an arc-shaped seal 6 of a matching shape to achieve sealing (it should be noted that air outlet holes need to be reserved at both ends of the arc-shaped seal 6 corresponding to the second-level air distribution cavity 5). The sealing method can be fixed by gluing.

[0055] In one embodiment, the air inlet channel 2, the mixing channel 3, the primary air distribution channel 4 and the secondary air distribution channel 5 are sequentially connected through channels, which include but are not limited to circular holes, square holes or other through holes.

[0056] An embodiment of the present invention further provides a semiconductor thin film device, comprising the above dual-inlet channel gas mixing device.

[0057] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in the present invention, and such modifications or substitutions are intended to be within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be subject to the scope of protection of the claims.

Claims

1. A dual-inlet channel gas mixing device, characterized in that: include: The gas distributor is arranged in a disc shape; A plurality of air inlet channels are relatively arranged inside the upper layer of the gas distribution block and are used for the entry of a plurality of gases; A plurality of mixing cavities are relatively arranged inside the upper layer of the air distribution block, and each mixing cavity is connected to all the air inlet cavities; A plurality of first-level gas separation cavities are relatively arranged inside the lower layer of the gas separation block and are connected to the plurality of mixing cavities in a one-to-one correspondence; A plurality of secondary air distribution channels are relatively arranged inside the lower layer of the air distribution block, and a primary air distribution channel is communicated with at least two secondary air distribution channels.

2. The dual-intake channel gas mixing device according to claim 1, characterized in that: A plurality of air inlets are provided on the outer circumference of the air distribution block, and the plurality of air inlets correspond to the middle positions of the plurality of air inlet cavities respectively.

3. The dual-intake channel gas mixing device according to claim 1, characterized in that: The air intake channel and the mixing channel are both arc-shaped and radially distributed in a circumferential direction around the center of the air separation block. The air intake channel is located radially outside the mixing channel.

4. The dual-intake channel gas mixing device according to claim 1, characterized in that: The air intake cavity and the mixing cavity are each provided with two symmetrical ones, and the arc angle range of the air intake cavity and the mixing cavity is 70 to 110 degrees.

5. The dual-intake channel gas mixing device according to claim 1, characterized in that: The plurality of mixing cavities and the plurality of first-level gas distribution cavities are symmetrically arranged, and the middle position of the mixing cavities is communicated with the middle position of the first-level gas distribution cavities.

6. The dual-intake channel gas mixing device according to claim 1, characterized in that: The shapes of the first-level air distribution channel and the second-level air distribution channel are both arc-shaped, and the second-level air distribution channel is located radially outside the first-level air distribution channel.

7. The dual-intake channel gas mixing device according to claim 6, characterized in that: Both ends of each primary air distribution channel are respectively communicated with the middle positions of two adjacent secondary air distribution channels, and both ends of each secondary air distribution channel are provided with air outlets.

8. The dual-inlet channel gas mixing device according to claim 1, characterized in that: A plurality of arc-shaped grooves are provided on the upper and lower surfaces of the gas separation block, and a sealing cover on each arc-shaped groove is provided with an arc-shaped sealing strip, thereby forming the corresponding intake cavity, mixing cavity, first-level gas separation cavity and second-level gas separation cavity.

9. The dual-inlet channel gas mixing device according to claim 1, characterized in that: The air inlet cavity, the mixing cavity, the first-stage air separation cavity and the second-stage air separation cavity are connected in sequence through the opened channels.

10. A semiconductor thin film device, characterized in that: It comprises a dual-inlet channel gas mixing device as described in any one of claims 1 to 9.

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