Manifold valve group structure

Abstract

The utility model relates to the technical field of semiconductor equipment manufacturing, in particular to a manifold valve group structure. The utility model provides a manifold valve group structure, which is mounted among a plurality of cavities and comprises a valve body and a plurality of valves. A plurality of cavity penetrating pipelines are arranged at the bottom of the valve body, penetrate through the lower portion of the valve body and are connected with the pipeline channel. The cavity penetrating pipeline and the pipeline channel are symmetrically distributed according to the position of the cavity; the valve is arranged between the cavity penetrating pipeline and the pipeline channel; and the plurality of cavity penetrating pipelines are used for introducing different process gases, and switching and on-off operations are carried out through valves, so that the process gases are switched to enter the cavities or return to the shunting pipelines in the process. According to the utility model, not only can the effective switching between the shunting pipeline and the cavity be realized, but also the requirements of adjusting the edge and central morphology of the wafer film are met.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment manufacturing, and more specifically to a manifold valve group structure. Background Art

[0002] In semiconductor manufacturing, precise equipment operation and meticulous control of reactive gases are crucial to process success. Complex processes, such as the stacking of layers in coating equipment, require switching between different process reactive gases to ensure that each layer is deposited with the desired chemical and physical properties. Gas delivery systems play a crucial role in this process.

[0003] Gas transmission systems primarily consist of key components such as valves and pipelines. Through precise piping layout and valve opening and closing operations, gas on / off and flow direction are controlled. This control system requires not only rapid response but also stable gas flow and pressure at different process stages to ensure process stability and repeatability.

[0004] For example, during the lamination process in coating equipment, it is often necessary to switch between two process reaction gases: silicon oxide (SiO) and silicon nitride (SiN). These two gases have different chemical and physical properties, placing strict demands on the equipment's valves and piping. Therefore, the gas delivery system must possess high precision and high reliability to ensure accurate and stable gas switching.

[0005] However, for multi-chamber semiconductor devices, especially dual-chamber semiconductor devices, how to evenly distribute the gas to the symmetrical two sides and quickly enter the reaction chamber has become a more complex problem. Utility Model Content

[0006] The purpose of the utility model is to provide a manifold valve group structure to solve the problem of how to achieve rapid switching and uniform distribution of different process reaction gases for multi-cavity semiconductor equipment.

[0007] In order to achieve the above objectives, the present invention provides a manifold valve group structure installed between multiple cavities, including a valve body and several valves:

[0008] The valve body is provided with a plurality of pipeline channels inside;

[0009] The bottom of the valve body is provided with a plurality of through-cavity pipelines, which pass through the bottom of the valve body and are connected to the pipeline channel;

[0010] The transluminal pipelines and pipeline channels are symmetrically distributed according to the position of the cavity;

[0011] The valve is arranged between the transluminal pipeline and the pipeline channel;

[0012] The multiple through-cavity pipelines are used to introduce different process gases, and are switched and opened and closed by valves to realize the switching of process gases into the cavity or returning to the diversion pipeline during the process.

[0013] In some embodiments, the valve body includes a second valve body and a first valve body arranged from top to bottom:

[0014] The bottom of the first valve body is provided with a plurality of through-cavity pipelines passing through from bottom to top;

[0015] A plurality of pipeline channels are provided inside the second valve body.

[0016] In some embodiments, the manifold valve group structure is installed between two cavities:

[0017] The plurality of through-cavity pipelines at the bottom of the first valve body are symmetrically distributed on both sides along the central axis of the first valve body.

[0018] In some embodiments, the plurality of transluminal conduits include a first conduit, a third conduit, a fifth conduit, a sixth conduit, a seventh conduit, and an eighth conduit:

[0019] The first pipeline and the third pipeline are used to provide a first group of process reaction gases;

[0020] The fifth pipeline and the sixth pipeline are used to provide a second group of process reaction gases;

[0021] The seventh pipeline is a diversion pipeline, which is used to divert the gas from the third pipeline and the fifth pipeline to the diversion front pipe and extract it;

[0022] The eighth pipeline is a purge pipeline, which is used to provide purge gas.

[0023] In some embodiments, the plurality of transluminal conduits include a second conduit and a fourth conduit:

[0024] The second pipeline is used to provide a first regulating gas into the cavity to adjust the morphology of the wafer edge;

[0025] The fourth pipeline is used to provide a second regulating gas to enter the cavity to adjust the morphology of the center of the wafer.

[0026] In some embodiments, the plurality of valves are arranged on the upper surface of the second valve body, between the through-lumen pipeline and the pipeline channel, to control the on / off or connection of the through-lumen pipeline and the internal pipeline channel.

[0027] In some embodiments, the plurality of valves include a plurality of two-way valves and three-way valves;

[0028] The three-way valve is used to switch the process gas during the process, so that the process gas enters the cavity or returns to the diversion pipeline;

[0029] The two-way valve is used to realize the on-off of gas during the process.

[0030] In some embodiments, the third pipeline and the fifth pipeline are respectively used to introduce special gases in the corresponding process reaction gases, and a three-way valve and a two-way valve are combined to realize the switching between the diversion pipeline and the cavity channel.

[0031] In some embodiments, a heating component is provided inside the valve body for heating and temperature control:

[0032] The heating assembly includes a heater, a temperature sensor and a temperature control system:

[0033] The heater is used to heat the valve body;

[0034] The temperature sensor is used to monitor the valve body temperature in real time, convert the temperature information into an electrical signal and output it to the temperature control system;

[0035] The temperature control system is used to receive the temperature signal from the temperature sensor and adjust the temperature of the heater according to a preset temperature value.

[0036] In some embodiments, the heater is a heating rod, which is inserted into the interior of the valve body to heat the valve body;

[0037] The temperature sensor is a thermocouple, which can monitor the temperature.

[0038] In some embodiments, the heating rod and the valve body are fixed with a top screw;

[0039] The outer side of the heating rod is covered with thermal insulation cotton.

[0040] In some embodiments, the valve connector is in the form of an IGS interface;

[0041] The valve is provided with a pneumatic joint.

[0042] The utility model proposes a manifold valve group structure, which aims to achieve rapid switching of multiple gases, ensure that two groups of gases can flow to the cavities on both sides respectively, realize the convergence and switching of multiple reaction gases in the stacking process, and have deposition and cleaning functions. Under the precise control of different ALD valves, it can achieve switching between the diversion pipeline and the cavity, while taking into account the needs of adjusting the edge and central morphology of the wafer film. The overall design is simple and compact, which saves space and reduces the difficulty of maintenance. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] The above and other features, properties and advantages of the present invention will become more apparent through the following description in conjunction with the accompanying drawings and embodiments, in which the same reference numerals represent the same features throughout, wherein:

[0044] Figure 1 The top schematic diagram of the three-dimensional structure of the manifold valve group structure according to one embodiment of the present invention is disclosed;

[0045] Figure 2 The schematic diagram below of the three-dimensional structure of the manifold valve group structure according to one embodiment of the present invention is disclosed;

[0046] Figure 3 A bottom view of a manifold valve assembly structure according to an embodiment of the present invention is disclosed;

[0047] Figure 4 A schematic diagram of the distribution of the through-cavity pipeline in the first valve body according to an embodiment of the present utility model is disclosed;

[0048] Figure 5 A top view of a manifold valve assembly structure according to an embodiment of the present invention is disclosed;

[0049] Figure 6 A schematic structural diagram of a heating assembly according to an embodiment of the present invention is disclosed.

[0050] The meanings of the reference numerals in the figures are as follows:

[0051] 10 first valve body;

[0052] 11 first pipeline;

[0053] 12 second pipeline;

[0054] 13 third pipeline;

[0055] 14 fourth pipeline;

[0056] 15 fifth pipeline;

[0057] 16 sixth pipeline;

[0058] 17 seventh pipeline;

[0059] 18 eighth pipeline;

[0060] 20 second valve body;

[0061] 21 first two-way valve;

[0062] 22 second two-way valve;

[0063] 23 third two-way valve;

[0064] 24 fourth two-way valve;

[0065] 25 first three-way valve;

[0066] 26 second three-way valve;

[0067] 31 heater;

[0068] 32 temperature sensors. DETAILED DESCRIPTION

[0069] In order to make the purpose, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0070] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "examples," "specific examples," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0071] The present invention proposes a manifold valve group structure that can realize the convergence and switching, deposition, and cleaning functions of multiple reaction gases in the stacking process. Under the control of different ALD valves, it can realize the switching between the diverter pipeline (divert) and the chamber (chamber), while taking into account the function of adjusting the morphology (profile) of the edge and center of the wafer film.

[0072] The utility model proposes a manifold valve group structure, which is installed between multiple cavities and includes a valve body and several valves:

[0073] The valve body is provided with a plurality of pipeline channels inside;

[0074] The bottom of the valve body is provided with a plurality of through-cavity pipelines, which pass through the bottom of the valve body and are connected to the pipeline channel;

[0075] The transluminal pipelines and pipeline channels are symmetrically distributed according to the position of the cavity;

[0076] The valve is arranged between the transluminal pipeline and the pipeline channel;

[0077] The multiple through-cavity pipelines are used to introduce different process gases, and are switched and opened and closed by valves to realize the switching of process gases into the cavity or returning to the diversion pipeline during the process.

[0078] The following describes the proposed manifold valve structure, using a dual-chamber semiconductor device as an example, to illustrate its installation and application between two chambers. In this scenario, the manifold valve structure aims to achieve uniform gas distribution and rapid switching between the two chambers.

[0079] Figure 1 The top schematic diagram of the three-dimensional structure of the manifold valve group structure according to one embodiment of the present invention is disclosed. Figure 2 The schematic diagram below shows the three-dimensional structure of the manifold valve group structure according to an embodiment of the present invention. Figure 1 and Figure 2 In the embodiment shown, the present invention provides a manifold valve assembly, comprising a second valve body 20 and a first valve body 10 arranged from top to bottom:

[0080] The bottom of the first valve body 10 is provided with a plurality of through-cavity pipes passing through from bottom to top;

[0081] A plurality of pipeline channels are provided inside the second valve body 20 , and the through-cavity pipelines are connected to the pipeline channels.

[0082] Figure 3 A bottom view of a manifold valve assembly structure according to an embodiment of the present invention is disclosed. Figure 4 A schematic diagram of the distribution of the through-cavity pipeline in the first valve body according to an embodiment of the present utility model is disclosed. Figure 3 and Figure 4 As shown, the first valve body 10 is provided with 14 through-cavity pipelines passing through from bottom to top, including two first pipelines 11, two second pipelines 12, two third pipelines 13, two fourth pipelines 14, two fifth pipelines 15, two sixth pipelines 16, one seventh pipeline 17 and one eighth pipeline 18;

[0083] like Figure 4 As shown, the same pipelines are represented by the same color, and the 14 transluminal pipelines are symmetrically distributed according to the positions of the double lumens.

[0084] More specifically, the 14 through-cavity pipelines are symmetrically distributed on both sides along the central axis of the first valve body 10 .

[0085] In this embodiment, the seventh pipeline 17 and the eighth pipeline 18 are each one and are arranged on the central axis;

[0086] There are two sixth pipelines 16, both arranged on the central axis;

[0087] There are two first pipelines 11, second pipelines 12, third pipelines 13, fourth pipelines 14, and fifth pipelines 15, which are symmetrically distributed on both sides. The 10 pipelines on the left and right sides are completely symmetrically designed.

[0088] The design of symmetrical distribution of the central axis ensures that the structures on the left and right sides are completely symmetrical, so that the lengths of the gas paths entering the cavities on both sides are equal, thereby ensuring the consistency of the deposited film parameters in the two cavities.

[0089] In addition, for the sixth pipeline 16, in addition to the above-mentioned symmetrical distribution method, other symmetrical distribution schemes can also be adopted, such as dividing it into two and symmetrically distributing them on both sides of the central axis to achieve balanced distribution and functional stability of the pipeline structure, thereby ensuring that the parameters of the thin films deposited in the two chambers are consistent.

[0090] The manifold valve assembly proposed in this invention includes multiple through-cavity pipelines extending from below. These pipelines are used to transport gases for silicon oxide (SiO) deposition, silicon nitride (SiN) deposition, purging, diverting, wafer edge adjustment, and wafer center adjustment. These gases, within the first valve body 10, pass through separate pipelines to the valve on the upper surface of the second valve body 20. Switching control of the three-way and two-way valves allows the gases to be switched during the lamination process, either entering the chamber for deposition or switching to the diverting pipeline for extraction by a pump.

[0091] More specifically, the first pipeline 11 and the third pipeline 13 are used to provide a first set of process reaction gases, which are used to deposit and generate a thin film corresponding to a first process, namely a silicon oxide (SiO) deposition process;

[0092] The fifth pipeline 15 and the sixth pipeline 16 are used to provide a second set of process reaction gases, which are used to deposit and generate a thin film corresponding to a second process, which is a silicon nitride (SiN) deposition process.

[0093] The second pipeline 12 is used to provide a first regulating gas into the chamber to adjust the morphology of the wafer edge;

[0094] The fourth pipeline 14 is used to provide a second regulating gas into the chamber to adjust the morphology of the center of the wafer;

[0095] The seventh pipeline 17 is a divert pipeline, which has the function of guiding the gas generated by the third pipeline 13 and the fifth pipeline 15 during the gas reservation process, draining the gas to the divert foreline, and finally pumping it out through a pump.

[0096] The eighth pipeline 18 is a purge pipeline for providing purge gas. During the process, the purge gas is used to remove residues and contaminants in the pipeline and cavity, maintaining the cleanliness of the system, thereby improving the yield rate of semiconductor devices.

[0097] Figure 5 A top view of a manifold valve assembly structure according to an embodiment of the present invention is disclosed. Figure 5 As shown, the second valve body 20 is provided with a plurality of internal channels connected to the through-cavity pipeline for introducing gases for the first process, the second process, cleaning, diversion, and adjusting the profile of the wafer film edge and the center.

[0098] A plurality of valves are provided on the upper surface of the second valve body 20 , which are arranged between the through-lumen pipeline and the pipeline channel to control the connection or disconnection of the through-lumen pipeline and the internal pipeline channel.

[0099] Furthermore, the plurality of valves are atomic layer deposition (ALD) diaphragm valves.

[0100] The plurality of valves include a plurality of two-way valves and three-way valves:

[0101] The three-way valve is used to switch the process gas during the process, so that the process gas enters the cavity or returns to the diversion pipeline;

[0102] The two-way valve is used to realize the on-off of gas during the process.

[0103] like Figure 5 As shown, the plurality of valves include 12 valves, which are symmetrically distributed on both sides along the central axis of the valve body.

[0104] Furthermore, the third pipeline 13 and the fifth pipeline 15 are respectively used to introduce the special gas in the corresponding process reaction gas, and a three-way valve and a two-way valve are combined to realize the switching of the diversion pipeline and the cavity channel.

[0105] Specifically, if Figure 5 As shown, a first two-way valve 21 is installed on each first pipeline 11;

[0106] Each third pipeline 13 is installed with a first three-way valve 25 and a second two-way valve 22;

[0107] Each fifth pipeline 15 is installed with a second three-way valve 26 and a third two-way valve 23;

[0108] A fourth two-way valve 24 is installed on each sixth pipeline 16 .

[0109] The following describes in detail the gas flow switching process of the manifold valve assembly structure proposed in the present invention. Since the two sides of the manifold valve assembly structure are symmetrically distributed, taking a single station of reactant gas on one side as an example, there are a total of six pipelines: the first pipeline 11, the second pipeline 12, the third pipeline 13, the fourth pipeline 14, the fifth pipeline 15, and the sixth pipeline 16. These pipelines are used to pass all reactant gases entering the chamber.

[0110] The first pipeline 11 and the third pipeline 13 are used to realize the process reaction gas of the silicon oxide (SiO) deposition process;

[0111] When the first two-way valve 21 of the first pipeline 11 is opened, the process gas in the first pipeline 11 flows into the interior of the cavity.

[0112] The third pipeline 13 requires a structure of a three-way valve plus a two-way valve to achieve rapid switching between the diverter pipeline and the cavity channel.

[0113] The gas in the third pipeline 13 is the main special gas in the silicon oxide (SiO) deposition process reaction. When entering the reaction, it needs to be able to quickly enter the chamber. This requires the gas in the third pipeline 13 to flow out of the gas box in advance, reserved in the manifold valve group, and flow all the way to the diversion pipeline channel of the seventh pipeline 17. Once the SiO deposition process is switched, the gas in the third pipeline 13 quickly opens the first three-way valve 25, switching from the diversion pipeline channel to the chamber channel, so that it merges with the gas in the first pipeline 11 and flows into the chamber together. Then, the second two-way valve 22 of the third pipeline 13 is closed to prevent the gas in the diversion pipeline channel from flowing back into the chamber.

[0114] The fifth pipeline 15 and the sixth pipeline 16 are process reaction gases for implementing the SiN process;

[0115] Similar to the third pipeline 13 , the fifth pipeline 15 requires a structure of a three-way valve plus a two-way valve to achieve rapid switching between the diversion pipeline channel and the cavity channel.

[0116] As the primary specialty gas in the silicon nitride (SiN) process, the gas in the fifth pipeline 15 must flow out of the gas box in advance, be reserved for the manifold valve group, and then flow into the diverter channel of the seventh pipeline 17. Once the SiN deposition process is switched, the gas in the fifth pipeline 15 quickly opens the second three-way valve 26, switching from the diverter channel to the chamber channel. This allows the gas to merge with the gas in the sixth pipeline 16 and flow into the chamber together. Then, the third two-way valve 23 of the fifth pipeline 15 is closed to prevent the gas in the diverter channel from flowing back into the chamber.

[0117] After the fourth two-way valve 24 of the sixth pipeline 16 is opened, the process gas in the sixth pipeline 16 flows into the interior of the chamber.

[0118] Second pipeline 12 is used to supply a first conditioning gas to adjust the topography of the wafer edge; fourth pipeline 14 is used to supply a second conditioning gas to adjust the topography of the wafer center. After the flow direction of the second and fourth pipelines 12 and 14 is redirected through the internal passage of second valve body 20, they are connected back to the corresponding gas lines and then enter the chamber.

[0119] The seventh pipeline 17 is a shunt pipeline, and its flow direction is opposite to all other pipelines. It flows out from the manifold valve group from the inside to the outside, and leads the gas in the gas pre-flow process of the third pipeline 13 and the fifth pipeline 15 to the shunt front pipe, and finally flows into the vacuum pump for extraction.

[0120] The eighth pipeline 18 is a reaction gas pipeline for the purge gas. After flowing out of the first valve body 10, it is divided into two and flows symmetrically to the cavities on both sides.

[0121] Furthermore, all valve connectors are in the form of IGS (Initial Graphics Exchange Specification) interfaces, which is a commonly used file format or interface standard in CAD software to facilitate the transmission of three-dimensional geometric graphics models and related information.

[0122] All valves are also provided with gaskets.

[0123] All valves are also equipped with pneumatic joints to open and close the valves by controlling the on and off of the airflow.

[0124] Figure 6 A schematic structural diagram of a heating assembly according to an embodiment of the present invention is disclosed. Figure 6 As shown, the heating component is installed inside the first valve body 10. Its main function is heating and temperature control. It can apply uniform temperature heating to the valve body to prevent the gas from generating particles in the flow channel due to condensation, thereby avoiding blockage of the flow channel in the valve body and ensuring the stability of process performance.

[0125] The heating assembly comprises a heater 31, a temperature sensor 32 and a temperature control system (not shown in detail):

[0126] The heater 31 is used to heat the valve body;

[0127] The temperature sensor 32 is used to monitor the valve body temperature in real time, convert the temperature information into an electrical signal and output it to the temperature control system;

[0128] The temperature control system is used to receive the temperature signal transmitted by the temperature sensor 32 and adjust the temperature of the heater 31 according to a preset temperature value.

[0129] The heater 31 may be a heating rod, which is inserted into the valve body to heat the valve body.

[0130] The temperature sensor 32 includes a thermocouple for monitoring temperature. To ensure good contact between the heating rod and the valve body, a screw is used to secure the heating rod to the valve body. Furthermore, the outside of the heating rod is covered with insulation to maintain heating efficiency and uniform temperature distribution.

[0131] The utility model provides a manifold valve group structure, which has the following beneficial effects:

[0132] 1) Pipelines are set up inside the valve body to switch different process gases through the valve to achieve the lamination process. At the same time, the flow of the diverter pipeline and the chamber can be adjusted and switched as needed to improve the equipment production capacity;

[0133] 2) The heater is installed inside the valve island, and all valves are heated centrally, which reduces heating costs and improves heating uniformity.

[0134] As used in this application and the claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not intended to refer to the singular but may include the plural. Generally speaking, the terms "comprises" and "include" only indicate the inclusion of the steps and elements specifically identified, and these steps and elements do not constitute an exclusive list. A method or apparatus may also include other steps or elements.

[0135] In the description of the present invention, it should be noted that the terms "upper", "lower", "front", "back", "left", "right", "vertical", "inside", "outside", etc., indicating directions or positional relationships, are based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they cannot be understood as limitations on the present invention.

[0136] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0137] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; they may refer to direct connections, indirect connections through an intermediate medium, or internal communication between two components. Those skilled in the art will understand the specific meanings of these terms in this utility model based on the specific circumstances.

[0138] The above embodiments are provided for persons familiar with the art to implement or use the present invention. Personnel familiar with the art may make various modifications or changes to the above embodiments without departing from the utility model concept of the present invention. Therefore, the scope of protection of the present invention is not limited to the above embodiments, but should be the maximum scope of the innovative features mentioned in the claims.

Claims

1. A manifold valve group structure, installed between multiple cavities, characterized in that: Including valve body and several valves: The valve body is provided with a plurality of pipeline channels inside; The bottom of the valve body is provided with a plurality of through-cavity pipelines, which pass through the bottom of the valve body and are connected to the pipeline channel; The transluminal pipelines and pipeline channels are symmetrically distributed according to the position of the cavity; The valve is arranged between the transluminal pipeline and the pipeline channel; The multiple through-cavity pipelines are used to introduce different process gases, and are switched and opened and closed by valves to realize the switching of process gases into the cavity or returning to the diversion pipeline during the process.

2. The manifold valve group structure according to claim 1, characterized in that: The valve body includes a second valve body and a first valve body arranged from top to bottom: The bottom of the first valve body is provided with a plurality of through-cavity pipelines passing through from bottom to top; A plurality of pipeline channels are provided inside the second valve body.

3. The manifold valve group structure according to claim 2, characterized in that: The manifold valve group structure is installed between the two cavities: The plurality of through-cavity pipelines at the bottom of the first valve body are symmetrically distributed on both sides along the central axis of the first valve body.

4. The manifold valve group structure according to claim 2, characterized in that: The plurality of transluminal pipelines include a first pipeline, a third pipeline, a fifth pipeline, a sixth pipeline, a seventh pipeline, and an eighth pipeline: The first pipeline and the third pipeline are used to provide a first group of process reaction gases; The fifth pipeline and the sixth pipeline are used to provide a second group of process reaction gases; The seventh pipeline is a diversion pipeline, which is used to divert the gas from the third pipeline and the fifth pipeline to the diversion front pipe and extract it; The eighth pipeline is a purge pipeline, which is used to provide purge gas.

5. The manifold valve group structure according to claim 2, characterized in that: The multiple transluminal pipelines include a second pipeline and a fourth pipeline: The second pipeline is used to provide a first regulating gas into the cavity to adjust the morphology of the wafer edge; The fourth pipeline is used to provide a second regulating gas to enter the cavity to adjust the morphology of the center of the wafer.

6. The manifold valve group structure according to claim 4, characterized in that: The plurality of valves are arranged on the upper surface of the second valve body, between the through-cavity pipeline and the pipeline channel, and control the on-off or connection of the through-cavity pipeline and the internal pipeline channel.

7. The manifold valve group structure according to claim 6, characterized in that: The plurality of valves include a plurality of two-way valves and three-way valves; The three-way valve is used to switch the process gas during the process, so that the process gas enters the cavity or returns to the diversion pipeline; The two-way valve is used to realize the on-off of gas during the process.

8. The manifold valve group structure according to claim 4, characterized in that: The third pipeline and the fifth pipeline are respectively used to introduce the special gases in the corresponding process reaction gases, and a three-way valve and a two-way valve are combined to realize the switching between the diversion pipeline and the cavity channel.

9. The manifold valve group structure according to claim 1, characterized in that: The valve body is provided with a heating component for heating and temperature control: The heating assembly includes a heater, a temperature sensor and a temperature control system: The heater is used to heat the valve body; The temperature sensor is used to monitor the valve body temperature in real time, convert the temperature information into an electrical signal and output it to the temperature control system; The temperature control system is used to receive the temperature signal from the temperature sensor and adjust the temperature of the heater according to a preset temperature value.

10. The manifold valve group structure according to claim 9, characterized in that: The heater is a heating rod inserted into the valve body to heat the valve body; The temperature sensor is a thermocouple, which can monitor the temperature.

11. The manifold valve group structure according to claim 10, characterized in that: The heating rod and the valve body are fixed with a top screw; The outer side of the heating rod is covered with thermal insulation cotton.

12. The manifold valve group structure according to claim 1, characterized in that: The valve connector is an IGS interface. The valve is provided with a pneumatic joint.

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