Resistor blank convenient to strip to form support-plate-free resistor

Abstract

The utility model provides a resistor blank convenient for stripping to form a support plate-free resistor, which comprises a support plate, a stripping layer is arranged on the support plate, a resistor area assembly and a non-resistor area are arranged above the support plate, and the resistor area assembly and the non-resistor area are both positioned above the stripping layer; the resistor region assembly comprises a resistor body and a plurality of groups of electrodes, and the resistor body is positioned above the stripping layer and is in contact with the stripping layer; the electrodes are positioned above the resistor body and are in contact with the resistor body, a plurality of groups of insulating layers are arranged on the resistor body, and the insulating layers are positioned between two groups of electrodes. According to the resistor blank, the stripping layer is arranged on the carrier plate, the resistor area assembly and the non-resistor area are located above the stripping layer, the stripping layer is a pyrolysis film, stripping can be conducted corresponding to the heating range, and the problem that an existing resistor base material is large in thickness is effectively solved; and meanwhile, each part is controlled within a specified range, so that the influence of the thickness of the support plate on other parts is avoided, and the optimization of the resistor size is realized.

Description

Technical Field

[0001] The utility model belongs to the technical field of boardless resistors, and more specifically, relates to a resistor embryo that is easy to peel off to form a boardless resistor. Background Art

[0002] In the existing resistor manufacturing process, ceramic or glass fiber is usually used as the base material, and then the electrode area and the resistor body are further formed on the base material. However, in the current developing electronics industry, the requirements for resistors are increasingly inclined to be lighter and thinner, because light and thin resistors have many advantages and can better adapt to the needs of various miniaturized and integrated electronic devices, showing superiority in performance and space utilization. However, the base material used in existing resistors is relatively thick, resulting in a certain limit to the thickness of the resistor body, which not only affects the further optimization of the resistor size, but also limits the resistance range of the resistor. It makes it difficult for resistors to achieve the ideal level of lightness and thinness, and cannot meet the existing electronic equipment manufacturing, thus hindering the innovation and development of the electronics industry to a certain extent. Utility Model Content

[0003] In order to solve the above technical problems, the present invention provides a resistor blank that is easy to peel off to form a carrier-free resistor, so as to solve the technical problem in the prior art that the existing resistor substrate is relatively thick, resulting in the thickness of the resistor being limited, and the resistor size cannot be further optimized. At the same time, it also forms a limitation on the resistance value of the resistor.

[0004] The purpose and effect of the present invention of facilitating peeling off a resistor embryo to form a carrier-less resistor are achieved by the following specific technical means:

[0005] A resistor embryo that is easy to peel off to form a carrier-less resistor includes a carrier, a peeling layer is provided on the carrier, a resistor area component and a non-resistance area are provided above the carrier, and the resistor area component and the non-resistance area are both located above the peeling layer; the resistor area component includes a resistor body and multiple groups of electrodes, the resistor body is located above the peeling layer and in contact with the peeling layer; the electrodes are located above the resistor body and in contact with the resistor body, and multiple groups of insulating layers are provided on the resistor body, and the insulating layer is located between two groups of electrodes.

[0006] According to a preferred embodiment, the surface of the peeling layer may be patterned or unpatterned, the area of ​​the peeling layer is smaller than or equal to the area of ​​the carrier board, and the thickness of the peeling layer is in the range of 1 to 500 μm.

[0007] According to a preferred embodiment, the resistor body is in partial or full contact with the peeling layer, and the thickness of the resistor body is in the range of 1 to 200 um.

[0008] According to a preferred embodiment, the bottom surface of the resistor body can be marked by laser or etching.

[0009] According to a preferred embodiment, the non-resistance area is provided with a cutting area, and after the cutting area is cut, the thickness of the peeling layer is greater than 1 um.

[0010] Compared with the prior art, the present invention has the following beneficial effects:

[0011] 1. A peeling layer is placed on the substrate, with a thickness ranging from 1 to 500 microns, and its surface can be patterned or unpatterned, flexibly adapting to different needs. The resistor body is partially or fully in contact with the peeling layer, with a thickness ranging from 1 to 200 microns. This significantly reduces the overall thickness of the resistor, thus breaking through the thickness limitation of traditional resistors due to the thick substrate. This allows for further optimization of the resistor size, providing strong support for the miniaturization and integration of electronic devices, and laying the foundation for expanding the application of resistors in a wider range of fields.

[0012] 2. Multiple insulating layers are incorporated into the resistor body to effectively separate the electrodes and enhance the resistor's performance stability. The bottom surface of the resistor body can be marked via laser or etching, facilitating subsequent identification and handling while also enhancing the adhesion of the peelable layer to the resistor body. A cutting zone, located outside the resistor area, ensures that operations such as cutting, when the peelable layer is thicker than 1 micron, will not excessively impact the resistor body. This not only addresses the resistance value limitations of traditional resistors, but also allows for greater diversity and precision in resistor values, meeting the needs of diverse circuits. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a schematic structural diagram of the utility model after assembly.

[0014] Figure 2 It is a schematic diagram of the structure of the utility model after being disassembled.

[0015] Figure 3 It is a side view of the present utility model.

[0016] Figure 4 It is a schematic diagram of the structure of the utility model after cutting.

[0017] In the figure, the corresponding relationship between the component names and the drawing numbers is as follows:

[0018] 11. Carrier board; 12. Peeling layer; 13. Cutting area; 21. Resistor body; 22. Electrode; 23. Insulation layer. DETAILED DESCRIPTION

[0019] The following embodiments of the present invention are described in further detail with reference to the accompanying drawings and examples. The following embodiments are used to illustrate the technical solution of the present invention, but are not intended to limit the scope of protection of the present invention.

[0020] Example:

[0021] like Figure 1 、 2 As shown, the present invention provides a resistor embryo that is easy to peel off to form a carrier-less resistor, including a carrier 11, and the carrier 11 is provided with a peeling layer 12. The peeling layer 12 is a pyrolytic film that can be peeled off according to the heating range. At the same time, a resistor area component and a non-resistance area are arranged in the upper area of ​​the carrier 11. Both the resistor area component and the non-resistance area are located above the peeling layer 12. The resistor area component includes a resistor body 21 and multiple groups of electrodes 22. The resistor body 21 can be located above the peeling layer 12, and the resistor body 21 is in contact with the peeling layer 12. The electrodes 22 are located above the resistor body 21 and in direct contact with the resistor body 21, forming a good connection. At the same time, multiple groups of insulating layers 23 are also provided on the resistor body 21. The insulating layer 23 is located between the two groups of electrodes 22, which can effectively isolate the different electrodes 22 to avoid unnecessary interference and influence between them, thereby ensuring the normal operation and stable performance of the resistor. By rationally arranging and matching each component, the entire resistor structure is made more compact, reasonable and efficient. This not only provides a strong guarantee for the performance of the resistor, but also lays the foundation for its application in various complex electronic devices, providing reliable support for the stable operation and good performance of electronic devices. At the same time, the flexibility and adaptability of this structure also enable it to be adjusted and optimized according to different application scenarios and needs, thus meeting the requirements of more diverse and personalized electronic devices.

[0022] The thickness of the carrier 11 is controlled within the range of 0.05 mm to 0.7 mm, which ensures that the carrier 11 has sufficient mechanical strength to support other components without causing the overall structure to be bulky and wasting space due to excessive thickness. The surface of the peeling layer 12 can be patterned according to actual needs. This patterned design can provide more possibilities and convenience for subsequent processes or applications, and meet the unique requirements for appearance or function in specific scenarios. The area of ​​the peeling layer 12 is limited. It is either smaller than the area of ​​the carrier 11 or equal to the area of ​​the carrier 11, so that the peeling layer 12 can perfectly adapt to the carrier 11, and the area will not be too large or too small to affect the overall structure and performance. In addition, the thickness of the peeling layer 12 ranges from 1 micron to 500 microns, providing sufficient space for its function to be realized and its performance to be exerted, so that it can achieve ideal results in terms of insulation, adhesion and other aspects, playing an important role in the optimization and improvement of the entire resistor structure.

[0023] The contact between the resistor body 21 and the peeling layer 12 can be partial, with the resistor body 21 only contacting a portion of the peeling layer 12, allowing the necessary connection and interaction to be established while leaving space for the other parts to function. Alternatively, the contact can be complete. When they are fully in contact, energy transfer and signal transmission between the two can be more efficient and stable. Furthermore, the thickness of the resistor body 21 is limited to a range of 1 micron to 200 microns, ensuring that the resistor body 21 can exert its resistance characteristics in the circuit while keeping the entire structure compact and efficient. At the same time, the bottom surface of the resistor body 21 can be marked using a laser or etching process. Laser operations, with their high energy and high precision, can create various markings on the bottom surface of the resistor body 21. These markings can be symbols, codes, etc. for identification, facilitating subsequent operation and management. Etching operations can also achieve pattern or marking, giving the bottom surface of the resistor body 21 specific information and functions, and can also increase the adhesion between the peeling layer 12 and the resistor body 21.

[0024] like Figure 4 As shown, a cutting zone 13 is provided on the non-resistor area. After cutting this cutting zone 13 via laser or mechanical cutting, the thickness of the peeling layer 12 is greater than 1 micron. This ensures that cutting and other related operations will not cause excessive impact or damage to the resistor body 21, ensuring the integrity and stability of the resistor body 21. Furthermore, the specified thickness of the peeling layer 12 provides reliable protection for subsequent processes and applications, ensuring smoother operation and function of the entire system.

[0025] The specific usage and function of this embodiment are as follows:

[0026] When in use, place the carrier 11 in a suitable position, and control its thickness between 0.05 mm and 0.7 mm. Next, set the peeling layer 12 on the carrier 11. Its area can be selected to be less than or equal to the area of ​​the carrier 11 according to actual conditions, and its thickness is in the range of 1 micron to 500 microns, and its surface can be patterned as needed. Then, arrange the resistor area components to ensure that the resistor body 21 is partially or fully in contact with the peeling layer 12. The thickness of the resistor body 21 is strictly limited to 1 micron to 200 microns. At the same time, mark the bottom surface of the resistor body 21 by laser or etching, and 3 to 5 marks for identification can be set. Let multiple groups of electrodes 22 be located above the resistor body 21 and in direct contact with it, and set an insulating layer 23 between the two groups of electrodes 22. A cutting area 13 is set in the non-resistance area. When cutting is required, laser or mechanical cutting can be used to make the thickness of the peeling layer 12 greater than 1 micron after cutting. This can avoid the insulating layer 23 remaining on the cutting area 13, causing it to be unable to be separated, ensuring its integrity and stability, thereby realizing the efficient and stable application of the entire resistor embryo in various electronic devices.

[0027] The basic principles, main features and advantages of the present invention are shown and described above. It is obvious to those skilled in the art that the present invention is not limited to the details of the above exemplary embodiments.

Claims

1. A resistor embryo that can be easily peeled off to form a carrier-less resistor, comprising a carrier (11), characterized in that: A peeling layer (12) is provided on the carrier (11), and a resistance zone component and a non-resistance zone are provided above the carrier (11), and the resistance zone component and the non-resistance zone are both located above the peeling layer (12); the resistance zone component includes a resistor body (21) and a plurality of groups of electrodes (22), the resistor body (21) is located above the peeling layer (12), and the resistor body (21) is in contact with the peeling layer (12); the electrodes (22) are located above the resistor body (21) and in contact with the resistor body (21), and a plurality of groups of insulating layers (23) are provided on the resistor body (21), and the insulating layer (23) is located between two groups of electrodes (22).

2. The resistor embryo that can be easily peeled off to form a substrate-less resistor according to claim 1, characterized in that: The surface of the peeling layer (12) can be patterned or unpatterned, the area of ​​the peeling layer (12) is smaller than or equal to the area of ​​the carrier (11), and the thickness of the peeling layer (12) ranges from 1 to 500 μm.

3. The resistor embryo that can be easily peeled off to form a carrier-less resistor according to claim 2, characterized in that: The resistor body (21) is in partial or complete contact with the peeling layer (12), and the thickness of the resistor body (21) ranges from 1 to 200 μm.

4. The resistor embryo that can be easily peeled off to form a carrier-less resistor according to claim 3, characterized in that: The bottom surface of the resistor body (21) can be marked by laser or etching.

5. The resistor embryo that can be easily peeled off to form a substrate-less resistor according to claim 1, characterized in that: The non-resistance area is provided with a cutting area (13), and after the cutting area (13) is cut, the thickness of the peeling layer (12) is greater than 1 μm.

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