Photoelectric sensor boost driving circuit and photoelectric sensor

Abstract

The utility model provides a photoelectric sensor boost drive circuit and a photoelectric sensor, and the photoelectric sensor boost drive circuit comprises a control module which is used for outputting control voltage and comprises an input end, an output end and a feedback end, and the input end of the control module is connected with a power supply; the boosting module is used for boosting the control voltage and then outputting the boosted control voltage as bias high voltage to drive the photoelectric sensor, the first input end of the boosting module is connected with the output end of the control module, and the second input end of the boosting module is connected with the input end of the control module; and the output module is used for feeding back the bias high voltage to the control module, and the control module adjusts the output control voltage according to the bias high voltage. According to the technical scheme, stable and efficient bias high voltage can be provided for a single sensor and an array type sensor, so that the application scene of the sensor is wider, and the sensor has high application value in actual product development.

Description

Technical Field

[0001] The present application relates to the field of photoelectric sensors, and in particular to a photoelectric sensor boost drive circuit and a photoelectric sensor. Background Art

[0002] Currently, in the field of TOF ranging, photoelectric sensors are used to receive light echo signals. The current mainstream photoelectric sensors are mainly APD, SiPM, and SPAD. These photoelectric sensors need to provide bias high voltage when working normally. Generally, a high-voltage circuit with a driving capacity of less than 10mA can meet the requirements. As consumers' requirements for image pixels increase, photoelectric sensors will be presented in the form of large-scale array sensors integrating APD, SiPM, and SPAD. Taking SPAD array sensors as an example, a SPAD array sensor can integrate more than 15,000 SPADs or even more SPADs. The stable operation of so many SPADs at the same time requires matching bias high voltage with stronger driving capability. Generally, a high-voltage circuit with a driving capacity of less than 10mA cannot meet this requirement. The high-voltage circuit needs to be able to provide an output current of 30mA or greater. Therefore, improving the driving capability of the photoelectric sensor bias high-voltage circuit has become a problem that must be solved in practical applications. Utility Model Content

[0003] This utility model aims to at least address the technical problem of photoelectric sensors in the prior art, which suffers from limited product application scenarios due to the driver circuit's inability to simultaneously drive multiple photoelectric sensors. To this end, this utility model proposes a photoelectric sensor boost driver circuit and a photoelectric sensor capable of driving multiple photoelectric sensors, making the product suitable for a wider range of application scenarios.

[0004] According to an embodiment of the present utility model, a photoelectric sensor boost drive circuit includes: a control module, which is used to output a control voltage, including an input end, an output end and a feedback end, and the input end of the control module is connected to a power supply; a boost module, which is used to boost the control voltage and output it as a bias high voltage, which includes a first input end, a second input end and an output end, the first input end of the boost module is connected to the output end of the control module, and the second input end of the boost module is connected to the input end of the control module; an output module, which is used to feed back the bias high voltage to the control module, and the control module adjusts the output control voltage according to the bias high voltage, which includes a first input end, a first output end and a second output end, the first input end of the output module is connected to the output end of the boost module, the second output end of the output module is connected to the feedback end of the control module, and the first output end of the output module outputs the bias high voltage.

[0005] Preferably, the control module includes a DC-DC BOOST boost controller, the input end of the control module is the VIN end of the DC-DC BOOST boost controller, the output end of the control module is the SW end of the DC-DC BOOST boost controller, and the feedback end of the control module is the FB end of the DC-DC BOOST boost controller.

[0006] Preferably, the boost module includes a second capacitor, a fourth capacitor, a fifth capacitor, a first diode, a second diode and a third diode, the anode of the third diode is connected to the first input terminal of the boost module, the cathode of the third diode is connected to the second capacitor to the ground, the anode of the second diode is connected to the cathode of the third diode, the cathode of the second diode is connected to the fifth capacitor to the second input terminal of the boost module, the anode of the first diode is connected to the cathode of the second diode, and the cathode of the first diode is connected to the fourth capacitor to the anode of the second diode.

[0007] Preferably, the boost module includes a second capacitor, a fourth capacitor, a fifth capacitor, a seventh capacitor, an eighth capacitor, a ninth capacitor, a tenth capacitor, a first diode, a second diode, a third diode, a fourth diode, a fifth diode, a sixth diode and a seventh diode; the anode of the third diode is connected to the first input terminal of the boost module, the cathode of the third diode is connected to the second capacitor to the ground, the anode of the second diode is connected to the cathode of the third diode, the cathode of the second diode is connected to the fifth capacitor to the second input terminal of the boost module, the anode of the first diode is connected to the cathode of the second diode, the fourth capacitor is connected between the anode of the second diode and the cathode of the first diode, the seventh capacitor is connected between the anode of the first diode and the cathode of the fourth diode, the anode of the fourth diode is connected to the cathode of the first diode, the eighth capacitor is connected between the anode of the fourth diode and the cathode of the fifth diode, the anode of the fifth diode is connected to the cathode of the fourth diode, the ninth capacitor is connected between the anode of the fifth diode and the cathode of the sixth diode, the anode of the sixth diode is connected to the cathode of the fifth diode, the tenth capacitor is connected between the anode of the sixth diode and the output terminal of the boost module, the anode of the seventh diode is connected to the cathode of the sixth diode, and the cathode of the seventh diode is connected to the output terminal of the boost module.

[0008] Preferably, the feedback module includes a first resistor, a second resistor, a tenth resistor and a sixth capacitor, the first resistor and the second resistor are connected in series between the input end of the feedback module and the ground, the connection point of the first resistor and the second resistor is connected to the second output end of the feedback module, the sixth capacitor is connected between the input end of the feedback module and the ground, and the tenth resistor is connected between the output end of the feedback module and the ground.

[0009] Preferably, the diode is a switching diode and / or a Schottky diode.

[0010] Preferably, the switching diode is of at least one type selected from BAV21, 1N4148, and PMBD914.

[0011] Preferably, the model of the Schottky diode is MBR180.

[0012] Preferably, the control module further includes a first capacitor, a first inductor, a third resistor and a third capacitor, the VIN terminal of the DC-DC BOOST boost controller is connected to the first capacitor to the ground, the VIN terminal of the DC-DC BOOST boost controller is connected to the first capacitor to the second input terminal of the boost module, and the COMP terminal of the DC-DC BOOST boost controller is connected to the third resistor and the third capacitor to the ground.

[0013] A photoelectric sensor according to an embodiment of the present invention includes the above-mentioned photoelectric sensor boost drive circuit.

[0014] Additional aspects and advantages of the present invention will be given in part in the following description and will become apparent from the following description or learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the following description of the embodiments with reference to the accompanying drawings, in which:

[0016] Figure 1 is a schematic diagram of a photoelectric sensor boost drive circuit in this embodiment;

[0017] Figure 2 2 is another principle diagram of the photoelectric sensor boost drive circuit in this embodiment.

[0018] Explanation of the accompanying drawings: control module 10DC-DC BOOST boost controller U1, first capacitor C1, first inductor L1, third resistor R3, third capacitor C3 boost module 20 second capacitor C2, fourth capacitor C4, fifth capacitor C5, seventh capacitor C7, eighth capacitor C8, ninth capacitor C9, tenth capacitor, first diode D1, second diode D2, third diode D3, fourth diode D4, fifth diode D5, sixth diode D6 and seventh diode D7 output module 30 first resistor R1, second resistor R2, tenth resistor R10, sixth capacitor C6. DETAILED DESCRIPTION

[0019] The following describes in detail embodiments of the present invention. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended only to explain the present invention and are not to be construed as limiting the present invention.

[0020] In the description of this utility model, it should be understood that the descriptions involving directions, such as up, down, front, back, left, and right, and the like, indicating directions or positional relationships, are based on the directions or positional relationships shown in the accompanying drawings and are intended only to facilitate the description of this utility model and simplify the description. They do not indicate or imply that the devices or components referred to must have a specific direction, be constructed and operate in a specific direction, and therefore should not be understood as limiting the utility model. In the description of this utility model, it should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance.

[0021] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, and connecting should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0022] See also Figures 1 to 2 The present application proposes a photoelectric sensor boost drive circuit, including: a control module 10, which is used to output a control voltage, including an input end, an output end and a feedback end, and the input end of the control module 10 is connected to a power supply; a boost module 20, which is used to boost the control voltage and output it as a bias high voltage, including a first input end, a second input end and an output end, the first input end of the boost module 20 is connected to the output end of the control module 10, and the second input end of the boost module 20 is connected to the input end of the control module 10; an output module 30, which is used to feed back the bias high voltage to the control module 10, and the control module 10 adjusts the output control voltage according to the bias high voltage, including a first input end, a first output end and a second output end, the first input end of the output module 30 is connected to the output end of the boost module 20, the second output end of the output module 30 is connected to the feedback end of the control module 10, and the first output end of the output module 30 outputs the bias high voltage.

[0023] The control module 10 includes a DC-DC boost controller U1, a first capacitor C1, a first inductor L1, a third resistor R3, and a third capacitor C3. The input of the control module 10 is the VIN terminal of the DC-DC boost controller U1, the output of the control module 10 is the SW terminal of the DC-DC boost controller U1, and the feedback terminal of the control module 10 is the FB terminal of the DC-DC boost controller U1. The VIN terminal of the DC-DC boost controller U1 is connected to the power supply and the first capacitor C1. The VIN terminal of the DC-DC boost controller U1 is connected to the first capacitor C1 and the second input terminal of the boost module 20. The COMP terminal of the DC-DC boost controller U1 is connected to the third resistor R3 and the third capacitor C3 and to ground.

[0024] The VIN terminal of the DC-DC BOOST controller U1 is connected to a 12V DC power supply, the first capacitor C1 is a 4.7uF filter capacitor, the inductance value of the first inductor L1 is 22uH, the resistance value of the third resistor R3 is 10KΩ, and the capacitance value of the third capacitor C3 is 10nF.

[0025] See also Figure 1 The boost module 20 includes a second capacitor C2, a fourth capacitor C4, a fifth capacitor C5, a first diode D1, a second diode D2 and a third diode D3. The anode of the third diode D3 is connected to the first input terminal of the boost module 20, the cathode of the third diode D3 is connected to the second capacitor C2 to the ground, the anode of the second diode D2 is connected to the cathode of the third diode D3, the cathode of the second diode D2 is connected to the fifth capacitor C5 and the second input terminal of the boost module 20, the anode of the first diode D1 is connected to the cathode of the second diode D2, the cathode of the first diode D1 is connected to the fourth capacitor C4 and the anode of the second diode D2, and the cathode of the first diode D1 is connected to the output terminal of the boost module 20.

[0026] In this embodiment, the capacitance value of the second capacitor C2 is 4.7 uF, the capacitance value of the fourth capacitor C4 is 4.7 uF, and the capacitance value of the fifth capacitor C5 is 1 uF.

[0027] In this embodiment, the first diode D1, the second diode D2, and the third diode D3 are switching diodes and / or Schottky diodes, wherein the switching diode is at least one of BAV21, 1N4148, and PMBD914, and the Schottky diode is MBR180.

[0028] See also Figure 2 The boost module 20 includes a second capacitor C2, a fourth capacitor C4, a fifth capacitor C5, a seventh capacitor C7, an eighth capacitor C8, a ninth capacitor C9, a tenth capacitor C10, a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5, a sixth diode D6 and a seventh diode D7.

[0029] The anode of the third diode D3 is connected to the first input terminal of the boost module 20, the cathode of the third diode D3 is connected to the second capacitor C2 and ground, the anode of the second diode D2 is connected to the cathode of the third diode D3, the cathode of the second diode D2 is connected to the fifth capacitor C5 and the second input terminal of the boost module 20, the anode of the first diode D1 is connected to the cathode of the second diode D2, the fourth capacitor C4 is connected between the anode of the second diode D2 and the cathode of the first diode D1, the seventh capacitor C7 is connected between the anode of the first diode D1 and the cathode of the fourth diode D4, the anode of the fourth diode D4 is connected to the The eighth capacitor C8 is connected to the cathode of the first diode D1, the eighth capacitor C8 is connected between the anode of the fourth diode D4 and the cathode of the fifth diode D5, the anode of the fifth diode D5 is connected to the cathode of the fourth diode D4, the ninth capacitor C9 is connected between the anode of the fifth diode D5 and the cathode of the sixth diode D6, the anode of the sixth diode D6 is connected to the cathode of the fifth diode D5, the tenth capacitor is connected between the anode of the sixth diode D6 and the output end of the boost module 20, the anode of the seventh diode D7 is connected to the cathode of the sixth diode D6, and the cathode of the seventh diode D7 is connected to the output end of the boost module 20.

[0030] In this embodiment, the capacitance values ​​of the second capacitor C2 , the fourth capacitor C4 , the fifth capacitor C5 , the seventh capacitor C7 , the eighth capacitor C8 , the ninth capacitor C9 , and the tenth capacitor C10 are all 100 nF.

[0031] In this embodiment, the first diode D1, the second diode D2, the third diode D3, the fourth diode D4, the fifth diode D5, the sixth diode D6, and the seventh diode D7 are switching diodes and / or Schottky diodes. The switching diodes are of at least one of BAV21, 1N4148, and PMBD914, and the Schottky diodes are of MBR180.

[0032] This embodiment is mainly aimed at some use scenarios of photoelectric sensors that require a bias high voltage of more than 100 volts or even 200 volts. Figure 2 The circuit can increase the power supply by as much as seven times.

[0033] In this embodiment, the diode is a switching diode and / or a Schottky diode. The switching diode is of at least one of BAV21, 1N4148, and PMBD914. The Schottky diode is of MBR180.

[0034] The output module 30 includes a fourth resistor R4, a first resistor R1, a second resistor R2, a tenth resistor R10, and a sixth capacitor C6. The fourth resistor R4, the first resistor R1, and the second resistor R2 are connected in series between the input terminal of the feedback module and ground. The connection between the first resistor R1 and the second resistor R2 is connected to the second output terminal of the feedback module. The sixth capacitor C6 is connected between the input terminal of the feedback module and ground. The tenth resistor R10 is connected between the output terminal of the feedback module and ground. In this embodiment, the resistance value of the first resistor R1 is 255KΩ, the resistance value of the second resistor R2 is 10KΩ, the resistance value of the tenth resistor R10 is 10KΩ, and the capacitance value of the sixth capacitor C6 is 1uF.

[0035] The following combination Figures 1 to 2 Here we will explain the working principle of this application.

[0036] See also Figure 1 The working principle of this application is to use the rectifying and guiding function of the diode to charge and discharge the capacitor, and then add up the voltage of the capacitor to obtain a higher voltage output. The specific working process is as follows:

[0037] Step 1: The voltage Um composed of the input voltage VIN and the output voltage Vsw of the DC-DC BOOST controller U1 charges the second capacitor C2 through the third diode D3, so that the second capacitor C2 is fully charged, and the voltage across the second capacitor C2 is Um.

[0038] Step 2: The voltage Um composed of the input voltage VIN and the output voltage Vsw of the DC-DC BOOST controller U1 is added to the voltage Um across the second capacitor C2. The fifth capacitor C5 is charged through the third diode D3 and the second diode D2, so that the fifth capacitor C5 is fully charged. The voltage across the fifth capacitor C5 is 2Um.

[0039] Step 3: The voltage across the fifth capacitor C5, 2Um, is charged through the first diode D1 and the first capacitor C1 circuit to the fourth capacitor C4, fully charging the fifth capacitor C5 to a voltage of 2Um. Here, the output voltage VOUT is derived from the second capacitor C2 and the fourth capacitor C4, so the output voltage VOUT = 3Um.

[0040] Step 4: The voltage divider feedback loop composed of the first resistor R1 and the second resistor R2 feeds back the detected output voltage VOUT value to the FB pin controlled by the DC-DC BOOST boost controller U1. The DC-DC BOOST boost controller U1 controls and detects whether the voltage value of the FB pin is 1.23V, thereby adjusting the output voltage pulse width of the Vsw terminal to stabilize the VOUT voltage at a fixed set voltage.

[0041] If an ordinary diode (1N4007) is used in this application, the maximum driving current of the boost module 20 is 10.91mA when the output high voltage is set to 32.595V, which can meet the needs of the photoelectric sensors APD, SiPM, and SPAD to operate stably within 10mA of the bias high voltage. However, for large photoelectric sensor arrays (such as: SPAD large-scale array sensors), the driving current of the bias high voltage needs to be 30mA or greater, and the circuit cannot meet the requirements.

[0042] Those skilled in the art will know that the key factor that directly affects the driving capability of a circuit lies in the energy storage of the capacitor. The amount of energy stored in the capacitor determines the maximum output driving current. Based on Kirchhoff's law and the characteristics of the capacitor, the relationship between capacitance and current can be obtained:

[0043] i(t)=C*du(t) / dt

[0044] Here, i(t) represents the change in current over time, C represents the capacitance, and du(t) / dt represents the rate of change of voltage over time. This equation illustrates the relationship between capacitance, current, and voltage. When the voltage changes rapidly, the current is higher; conversely, when the voltage changes slowly, the current is lower. This capacitance-current relationship shows that, given a fixed capacitance C, increasing du(t) / dt will increase i(t), thereby improving the capacitor's energy storage capacity.

[0045] from Figure 1 It can be seen that the key components affecting du(t) / dt are the first diode D1, the second diode D2, and the third diode D3. After experiments, it is known from Table 1 that Figure 1 If a standard 1N4007 diode is used in this circuit, its Ir (reverse leakage current), Trr (reverse recovery time), and TT (forward conduction time) are much greater than those of a switching diode (BAV21, 1N4148, PMBD914) or a Schottky diode (MBR180). These three parameters are key to how the diode affects du(t) / d(t). Therefore, this application uses a switching diode (BAV21, 1N4148, PMBD914) or a Schottky diode (MBR180).

[0046]

[0047]

[0048] Table 1 Parameters of various types of diodes

[0049] Please refer to Table 2, which shows the actual measured i(t), C, and du(t) / dt parameters using a switching diode (BAV21, 1N4148, PMBD914) or a Schottky diode (MBR180). Replacing the switching diode and Schottky diode greatly improves the performance compared to the ordinary diode (model 1N4007). Figure 1 The energy storage capacity of a capacitor in a circuit.

[0050]

[0051] Table 2 Actual measured du(t) / d(t), C, i(t) parameters of various diode types

[0052] After replacing the diodes of various types, the actual driving output current test of the triple voltage charge pump boost circuit is shown in Table 3 when the output high voltage is set to 32.595V.

[0053] As can be seen from Table 3, the driving capability of the high-voltage circuit can be improved. The driving current of the charge pump high-voltage output is increased from 10mA to more than 93mA, and can reach a maximum of 135mA. Different diodes have different enhancement effects. The output driving current of the circuit has been greatly improved, which can well provide the bias high voltage required for stable operation of the array photoelectric sensor.

[0054]

[0055] Table 3 Actual output current test table of high voltage circuit corresponding to different types of diodes

[0056] See also Figure 2 If you use Figure 2 The photoelectric sensor boost drive circuit can increase the output voltage by 7 times, that is, 200V, and can also increase the output current. As shown in Table 1, Table 1 shows the load output current corresponding to each output voltage of the photoelectric sensor boost drive circuit. It can be seen from Table 1 that when the output voltage is 32.61V, the output current is 98.82mA, when the output voltage is 50.73V, the output current is 30.018mA, when the output voltage is 100.37V, the output current is 31.76mA, when the output voltage is 150.05V, the output current is 32.34mA, and when the output voltage is 200.13V, the output current is 32.33mA. Therefore, the use of Figure 2 The photoelectric sensor boost drive circuit shown can provide an output drive current of 30mA from an output voltage of 32V to 200V, which can meet the bias high voltage required for stable operation of a single photoelectric sensor or an array sensor.

[0057]

[0058] Table 4 Output current with load corresponding to each output voltage of photoelectric sensor boost drive circuit

[0059] The technical solution of the present application has the following technical effects: by improving the output driving current of the photoelectric sensor boost driving circuit, the photoelectric sensor boost driving circuit can be more widely adapted to single sensors or array sensors composed of photoelectric sensors such as APD, SiPM, SPAD, etc., and can provide stable and efficient bias high voltage for single sensors and array sensors, with a wider range of application scenarios and high application value in actual product development.

[0060] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with that embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the illustrative use of the above terms does not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0061] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and purpose of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A photoelectric sensor boost drive circuit, characterized in that: include: A control module, which is used to output a control voltage, includes an input terminal, an output terminal, and a feedback terminal, wherein the input terminal of the control module is connected to a power supply; a boost module, configured to boost the control voltage and output it as a bias high voltage to drive the photoelectric sensor, comprising a first input terminal, a second input terminal, and an output terminal, wherein the first input terminal of the boost module is connected to the output terminal of the control module, and the second input terminal of the boost module is connected to the input terminal of the control module; An output module is used to feed back the bias high voltage to the control module. The control module adjusts the output of the control voltage according to the bias high voltage. The output module includes a first input end, a first output end, and a second output end. The first input end of the output module is connected to the output end of the boost module, the second output end of the output module is connected to the feedback end of the control module, and the first output end of the output module outputs the bias high voltage.

2. The photoelectric sensor boost drive circuit according to claim 1, characterized in that: The control module includes a DC-DC BOOST boost controller, the input end of the control module is the VIN end of the DC-DC BOOST boost controller, the output end of the control module is the SW end of the DC-DC BOOST boost controller, and the feedback end of the control module is the FB end of the DC-DC BOOST boost controller.

3. The photoelectric sensor boost drive circuit according to claim 1, wherein: The boost module includes a second capacitor, a fourth capacitor, a fifth capacitor, a first diode, a second diode and a third diode, the anode of the third diode is connected to the first input terminal of the boost module, the cathode of the third diode is connected to the second capacitor to the ground, the anode of the second diode is connected to the cathode of the third diode, the cathode of the second diode is connected to the fifth capacitor to the second input terminal of the boost module, the anode of the first diode is connected to the cathode of the second diode, the cathode of the first diode is connected to the fourth capacitor to the anode of the second diode, and the cathode of the first diode is connected to the output terminal of the boost module.

4. The photoelectric sensor boost driving circuit according to claim 1, wherein: The boost module includes a second capacitor, a fourth capacitor, a fifth capacitor, a seventh capacitor, an eighth capacitor, a ninth capacitor, a tenth capacitor, a first diode, a second diode, a third diode, a fourth diode, a fifth diode, a sixth diode and a seventh diode; The anode of the third diode is connected to the first input terminal of the boost module, the cathode of the third diode is connected to the second capacitor to the ground, the anode of the second diode is connected to the cathode of the third diode, the cathode of the second diode is connected to the fifth capacitor to the second input terminal of the boost module, the anode of the first diode is connected to the cathode of the second diode, the fourth capacitor is connected between the anode of the second diode and the cathode of the first diode, the seventh capacitor is connected between the anode of the first diode and the cathode of the fourth diode, the anode of the fourth diode is connected to the cathode of the first diode, the eighth capacitor is connected between the anode of the fourth diode and the cathode of the fifth diode, the anode of the fifth diode is connected to the cathode of the fourth diode, the ninth capacitor is connected between the anode of the fifth diode and the cathode of the sixth diode, the anode of the sixth diode is connected to the cathode of the fifth diode, the tenth capacitor is connected between the anode of the sixth diode and the output terminal of the boost module, the anode of the seventh diode is connected to the cathode of the sixth diode, and the cathode of the seventh diode is connected to the output terminal of the boost module.

5. The photoelectric sensor boost driving circuit according to claim 1, wherein: The feedback module includes a fourth resistor, a first resistor, a second resistor, a tenth resistor and a sixth capacitor. The fourth resistor, the first resistor and the second resistor are connected in series between the input end of the feedback module and the ground. The connection point of the first resistor and the second resistor is connected to the second output end of the feedback module. The sixth capacitor is connected between the input end of the feedback module and the ground. The tenth resistor is connected between the output end of the feedback module and the ground.

6. The photoelectric sensor boost drive circuit according to claim 3 or 5, characterized in that: The diode is a switching diode and / or a Schottky diode.

7. The photoelectric sensor boost driving circuit according to claim 6, characterized in that: The switching diode is of a model of at least one of BAV21, 1N4148, and PMBD914.

8. The photoelectric sensor boost driving circuit according to claim 6, wherein: The model of the Schottky diode is MBR180.

9. The photoelectric sensor boost driving circuit according to claim 1, wherein: The control module also includes a first capacitor, a first inductor, a third resistor and a third capacitor. The VIN terminal of the DC-DC BOOST boost controller is connected to the first capacitor and ground. The VIN terminal of the DC-DC BOOST boost controller is connected to the first capacitor and the second input terminal of the boost module. The COMP terminal of the DC-DC BOOST boost controller is connected to the third resistor and the third capacitor and ground.

10. A photoelectric sensor, characterized in that: It includes the photosensor boost drive circuit according to any one of claims 1 to 9.

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