Device body magnetic shielding device with semiconductor electric shielding layer

Abstract

The utility model discloses a device body magnetic shielding device with a semiconductor electric shielding layer, which comprises a long-strip-shaped lamination main body, insulating battens are arranged on two sides of the long-strip-shaped lamination main body, the semiconductor electric shielding layer is wrapped outside the long-strip-shaped lamination main body and the insulating battens, and the semiconductor electric shielding layer is wrapped outside the long-strip-shaped lamination main body and the insulating battens. The outer side of the semiconductor electric shielding layer is wrapped with an outer insulating layer, and the long-strip-shaped lamination main body is provided with a grounding wire, so that the long-strip-shaped lamination main body, the insulating battens, the semiconductor electric shielding layer and the outer insulating layer form a magnetic shielding main body of the whole transformer body.

Description

Technical Field

[0001] The utility model relates to the field of transformer manufacturing, and more particularly to a transformer body magnetic shielding device with a semiconductor electric shielding layer. Background Art

[0002] Transformers are very common in our daily lives. To reduce eddy current losses in structural components, large-capacity transformers usually have a magnetic shield installed on the core clamp. Due to its high magnetic permeability and low loss characteristics, the magnetic shield can guide the coil leakage magnetic field into the magnetic shield, significantly reducing the leakage flux entering the core clamp, thereby significantly reducing the eddy current losses on the core clamp. The existing magnetic shield structure of the transformer body is a long strip structure, generally consisting of a long strip of silicon steel sheet laminated with an insulating layer, consisting of silicon steel sheet strips, adhesive, a single layer of glass adhesive tape, an outer insulating layer and a grounding wire (such as Figure 2 ), the main body of the magnetic shield is made of cold-rolled silicon steel sheets with a thickness of about 0.3mm bonded together. Since the cross-section of the magnetic shield is rectangular, the sharp edges will cause electric field concentration and trigger local discharge. In addition, if the magnetic shielding silicon steel sheets are debonded and separated, the vibration caused by the magnetic field force during operation will cause intermittent contact between the silicon steel sheets, thereby triggering discharge between the magnetic shielding layers. Therefore, in order to solve the electric field concentration problem of traditional magnetic shielding, it is necessary to set an independent electric shielding device on the outside of the magnetic shielding edge located in the high electric field area, making the related structure more complicated. Utility Model Content

[0003] In view of the problems existing in the prior art, the present invention provides a device body magnetic shielding device with a semiconductor electric shielding layer to solve the technical problems mentioned in the background technology.

[0004] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a device body magnetic shielding device with a semiconductor electric shielding layer, comprising a long strip laminated body, insulating strips are provided on both sides of the long strip laminated body, the outer side of the long strip laminated body and the insulating strips are wrapped with a semiconductor electric shielding layer, the outer side of the semiconductor electric shielding layer is wrapped with an outer insulating layer, and a grounding wire is provided on the long strip laminated body, so that the main body of the magnetic shielding of the entire device body is formed by the long strip laminated body, the insulating strips, the semiconductor electric shielding layer and the outer insulating layer.

[0005] The utility model is further configured such that the long strip laminate body includes silicon steel sheet strips, a plurality of silicon steel sheet strips are provided, and the grounding wire is fixedly provided on the outermost silicon steel sheet strip, thereby forming the long strip laminate body through the silicon steel sheet strips.

[0006] The utility model is further configured such that the silicon steel sheet strips are welded to each other, and the grounding wire is welded to the outermost silicon steel sheet strip, thereby facilitating the connection between the grounding wire and the long strip laminate body.

[0007] The present invention is further configured such that the long strip laminate body is a rectangular cross-section laminate structure.

[0008] The utility model is further configured such that the outer edge fillet radius of the semiconductor electric shielding layer reaches more than 6 mm, so that there will be no electric field concentration phenomenon at the magnetic shielding edge, and thus the magnetic shielding layer can be placed in a high electric field area.

[0009] The utility model is further configured such that outer edges of the insulating strips are rounded, and the material is high-density cardboard or epoxy glass cloth board.

[0010] The utility model is further configured such that the semiconductor electric shielding layer is bound with more than two layers of semiconductor adhesive tape with a thickness of 1 mm and a width of about 60 mm, the gap between the semiconductor adhesive tapes of each layer is 2 to 5 mm, the seam gaps between the layers are staggered by about 30 mm, and the radius of the rounded corners of the semiconductor outer edges is greater than 6 mm.

[0011] The utility model is further configured such that the outer insulating layer is wrapped with a U-shaped paperboard to a certain thickness and is fastened to the outside of the semiconductor electric shielding layer with a heat shrink tape.

[0012] Compared with the prior art, the present invention provides a device body magnetic shielding device with a semiconductor electric shielding layer, which has the following beneficial effects:

[0013] The utility model sets the outer edge radius of the semiconductor electric shielding layer to more than 6mm. The structure has excellent magnetic shielding partial discharge performance and there is no electric field concentration at the magnetic shielding edge. Therefore, it can be placed in a high electric field area.

[0014] In the utility model, since the semiconductor electric shielding layer is in good contact with each silicon steel sheet lamination, even if gaps are formed between the laminations due to loose bonding, resulting in poor contact between the sheets during operation, interlayer discharge will not occur because the semiconductor electric shielding layer has connected them.

[0015] The semiconductor electric shielding layer provided in the utility model is made of semiconductor material, so the leakage magnetic field can penetrate the electric shielding layer into the magnetic shielding body without loss, and will not reduce the effect of the magnetic shielding. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a schematic diagram of the overall structure of a device body magnetic shielding device with a semiconductor electric shielding layer;

[0017] Figure 2 It is a traditional long strip magnetic shielding structure.

[0018] In the figure: 1. Long strip laminate body; 2. Insulation strip; 3. Semiconductor electric shielding layer; 4. Outer insulation layer; 5. Grounding wire; 6. Silicon steel sheet strip. DETAILED DESCRIPTION

[0019] It should be noted that, in the absence of conflict, the embodiments and features of the embodiments in this application can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0020] It should be noted that, unless otherwise specified, all technical and scientific terms used in this application have the same meaning as commonly understood by ordinary technicians in the technical field to which this application belongs.

[0021] In the present invention, unless otherwise specified, directions such as "up" and "down" are usually relative to the directions shown in the drawings, or relative to the vertical, perpendicular or gravity direction; similarly, for ease of understanding and description, "left" and "right" are usually relative to the left and right shown in the drawings; "inside" and "outside" refer to the inside and outside relative to the outline of each component itself, but the above-mentioned direction words are not used to limit the present invention.

[0022] See also Figure 1-2 A device body magnetic shielding device with a semiconductor electric shielding layer includes a long strip laminated body 1, which is characterized in that insulating strips 2 are provided on both sides of the long strip laminated body 1, the outer side of the long strip laminated body 1 and the insulating strips 2 are wrapped with a semiconductor electric shielding layer 3, the outer side of the semiconductor electric shielding layer 3 is wrapped with an outer insulating layer 4, and a grounding wire 5 is provided on the long strip laminated body 1.

[0023] In this embodiment, the main structure of the magnetic shielding of the entire device body with the semiconductor electric shielding layer 3 is formed by the long strip laminate body 1, the insulating strip 2, the semiconductor point shielding layer and the outer insulating layer 4.

[0024] See also Figure 1-Figure 2 As an embodiment of forming the magnetic shield of the entire device body with a semiconductor electric shielding layer: the long strip laminate body 1 includes a plurality of silicon steel sheet strips 6, a grounding wire 5 is fixedly arranged on the outermost silicon steel sheet strip 6, the silicon steel sheet strips 6 are welded to each other, and the grounding wire 5 is welded to the outermost silicon steel sheet strip 6. The long strip laminate body 1 has a rectangular cross-section laminate structure, and the outer edge radius of the semiconductor electric shielding layer 3 is greater than 6 mm.

[0025] Specifically, silicon steel strips 6 of equal width and length are cut and glued together with glue to form a long strip laminate body 1 with a rectangular cross-section; an insulating strip 2 with a width slightly smaller than the width of the silicon steel strip 6 by about 2 mm and a thickness of 3 mm to 5 mm is placed outside the outermost laminate of the long strip laminate body 1, and the outer edges of the insulating strip 2 are rounded, and the material is high-density cardboard or epoxy glass cloth board; then, two or more layers of semiconductor adhesive tape with a thickness of 1 mm and a width of about 60 mm are tied on the outside to form a semiconductor electric shielding layer 3, the gap between the semiconductor adhesive tapes of each layer is 2 to 5 mm, the seam gaps between the layers are staggered by about 30 mm, and the radius of the rounded corners of the semiconductor outer edges is greater than 6 mm; the outside of the semiconductor electric shielding layer 3 is covered with an outer insulating layer 4 of a certain thickness using U-shaped cardboard and tied tightly with heat shrink tape, and a grounding wire 5 is welded and led out at an appropriate position on the outermost silicon steel strip 6 of the long strip laminate body 1.

[0026] In all the schemes mentioned above, the connection between the two components can be selected according to actual conditions by welding, bolt and nut connection, bolt or screw connection or other well-known connection methods, which will not be listed here one by one. In the above, all fixed connections are preferably welded. Although the embodiments of the present invention have been shown and described, it can be understood by ordinary technicians in this field that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the present invention. The scope of the present invention is defined by the attached claims and their equivalents.

Claims

1. A magnetic shielding device with a semiconductor electric shielding layer, comprising a long strip laminated body (1), characterized in that: Insulating strips (2) are provided on both sides of the long strip laminate body (1), a semiconductor electric shielding layer (3) is provided on the outer side of the long strip laminate body (1) and the insulating strips (2), an outer insulating layer (4) is provided on the outer side of the semiconductor electric shielding layer (3), and a grounding wire (5) is provided on the long strip laminate body (1).

2. The device body magnetic shielding device with a semiconductor electric shielding layer according to claim 1, characterized in that: The long strip-shaped laminated body (1) comprises a silicon steel sheet strip (6), a plurality of silicon steel sheet strips (6) are provided, and the grounding wire (5) is fixedly provided on the outermost silicon steel sheet strip (6).

3. The device body magnetic shielding device with a semiconductor electric shielding layer according to claim 2, characterized in that: The silicon steel sheet strips (6) are welded to each other, and the grounding wire (5) is welded to the outermost silicon steel sheet strip (6).

4. The device body magnetic shielding device with a semiconductor electric shielding layer according to claim 2, characterized in that: The long strip laminated body (1) is a rectangular cross-section laminated structure.

5. The device body magnetic shielding device with a semiconductor electric shielding layer according to claim 1, characterized in that: The outer edge fillet radius of the semiconductor electric shielding layer (3) is greater than 6 mm.

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