Gallium nitride power amplifier and device

Abstract

The utility model provides a gallium nitride power amplifier and device. The gallium nitride power amplifier comprises a tube core; the first packaging body comprises a first packaging part and a bonding pad, and the tube core is packaged in the first packaging part and is supported on the bonding pad so as to form a pre-packaging structure for the tube core; the pre-packaging structure is arranged in the second packaging body, and the tube core is connected with a tube pin of the second packaging body through the first packaging body. According to the gallium nitride power amplifier and the gallium nitride power device, the tube core is pre-packaged through the first packaging body, and then the pre-packaged whole body is subjected to secondary packaging through the second packaging body, so that the routing inductance of the source electrode of the tube core is remarkably reduced, the purposes of improving the gain performance of the tube core and reducing parasitic parameters are achieved, and meanwhile, the yield of the tube core is improved. The bonding pad arranged in the first packaging body is in direct contact with the tube core, so that the large-area heat dissipation effect can be realized, the tube core working environment is stabilized, and the service life of the component is prolonged.

Description

Technical Field

[0001] The present invention relates to the field of radio frequency packaging, and in particular to a gallium nitride power amplifier and device. Background Art

[0002] With the rapid development of wireless communication technology, especially the popularization of 5G communication technology, gallium nitride (GaN) power amplifiers have been widely used in the radio frequency (RF) field due to their high efficiency, high power density, and wide bandwidth. However, the packaging technology of GaN power amplifiers faces two major challenges: die heat dissipation and the influence of parasitic parameters.

[0003] First, there's the issue of heat dissipation in GaN power amplifiers. GaN power chips range in power from a few watts to hundreds of watts, or even thousands of watts, generating significant heat during operation. Effectively dissipating this heat is crucial for ensuring the reliability and stability of the power amplifier. Due to the high heat dissipation of GaN chips, traditional packaging methods struggle to meet these requirements. This necessitates innovative packaging technologies to achieve efficient heat dissipation.

[0004] Secondly, there's the impact of parasitic parameters. With the development of 5G communication technology, the application frequency of GaN power amplifier products is increasing, placing higher demands on packaging technology. Under high-frequency operating conditions, the parasitic parameters introduced by the packaging (such as parasitic inductance and capacitance) can significantly affect the performance of the power amplifier, including signal integrity, power added efficiency (PAE), and linearity. Therefore, reducing the parasitic parameters introduced by the packaging is key to improving the performance of GaN power amplifiers.

[0005] At present, in order to solve the problem of heat consumption, the industry often uses ceramic tube shells for packaging. They have strong power resistance and heat dissipation performance. However, due to the large size of ceramic tube shell packaging and large parasitic parameters, there is a technical bottleneck in the field of high-frequency use.

[0006] Secondly, QFN (Quad Flat No-Lead) and DFN (Dual Flat No-Lead), two common surface mount technology (SMT) packaging methods, have been widely used in packaging integrated circuits (ICs) and other semiconductor devices. QFN and DFN packages are small in size, suitable for space-constrained applications, and offer excellent thermal performance. The large heat dissipation pads on the bottom of the structure effectively dissipate heat. Furthermore, they offer good electrical performance, low inductance and resistance, and are suitable for high-speed and microwave applications. However, the solder joints in these structures are located at the bottom of the component, making rework difficult due to the need to remove the component. Furthermore, their reliability needs to be improved. Summary of the Invention

[0007] Therefore, the technical problem to be solved by the present invention is to overcome the problems of poor heat dissipation and high parasitic parameters in the prior art, and to provide a gallium nitride power amplifier and device.

[0008] To solve the above technical problems, the present invention provides a gallium nitride power amplifier, comprising: a tube core; a first packaging body, comprising a first packaging portion and a solder pad, the first packaging portion being connected to the solder pad, the tube core being packaged in the first packaging portion and supported on the solder pad to form a pre-packaged structure for the tube core; and a second packaging body, the pre-packaged structure being arranged inside the second packaging body, and the tube core being connected to the pins of the second packaging body through the first packaging body.

[0009] In one embodiment of the present invention, at least one connecting through hole is provided on the first packaging portion, one end of any of the connecting through holes is connected to the outside world, and the other end extends to the pad, and the die source is connected to the connecting through hole.

[0010] In one embodiment of the present invention, the first packaging body further includes at least one thinning dielectric portion, and the at least one thinning dielectric portion is disposed in the first packaging portion and is respectively disposed between the tube die and at least one of the connecting through holes.

[0011] In one embodiment of the present invention, the first packaging body further includes a first connection layer, and the first connection layer is disposed between the first packaging portion and the first connection layer.

[0012] In one embodiment of the present invention, the second packaging body includes a second packaging portion and a mounting portion, the second packaging portion is disposed on the mounting portion, and the first packaging body is disposed in the second packaging portion and supported by the mounting portion.

[0013] In one embodiment of the present invention, the second packaging body further includes a second connection layer, and the second connection layer is disposed between the second packaging portion and the second connection layer.

[0014] In one embodiment of the present invention, the pad includes a body and an anti-oxidation layer, and the anti-oxidation layer is coated on the surface of the body.

[0015] In one embodiment of the present invention, the tube core includes a tube body and a gold-plated layer, and the gold-plated layer is coated on the surface of the tube body.

[0016] In one embodiment of the present invention, the pad has a thickness of 35-45 μm, the second package body has a length of 4.20-4.70 mm, a width of 2.40-2.50 mm, and a height of 1.50-1.60 mm.

[0017] The utility model also provides a device, which includes the above-mentioned gallium nitride power amplifier.

[0018] The above technical solution of the utility model has the following advantages compared with the prior art:

[0019] The gallium nitride power amplifier and device described in this utility model pre-packages the die with a first package body, and then re-packages the pre-packaged whole with a second package body. Based on this structure, it can significantly reduce the bonding inductance of the die source, thereby achieving the purpose of improving the die gain performance and reducing parasitic parameters. At the same time, the pads provided in the first package body directly contact the die, thereby achieving a large-area heat dissipation effect, thereby stabilizing the die operating environment and extending the service life of the components. In addition, compared with traditional packaging structures, this application also has the advantages of comprehensive packaging, easy installation and connection, small size, and a wide range of application scenarios. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to make the content of the present invention more clearly understood, the present invention is further described in detail below based on specific embodiments of the present invention in conjunction with the accompanying drawings.

[0021] Figure 1 This is a schematic structural diagram of a gallium nitride power amplifier in a preferred embodiment of the present invention;

[0022] Figure 2 yes Figure 1 A schematic structural diagram of a first package and a die in the gallium nitride power amplifier shown;

[0023] Figure 3 yes Figure 1 The logic diagram of the GaN power amplifier is shown.

[0024] Explanation of the reference numerals in the specification: 100, die; 200, first package body; 210, pad; 220, connecting through-hole; 230, thinned dielectric portion; 240, first package portion; 300, second package body; 310, pin; 320, mounting portion; 330, second package portion; 400, wire. DETAILED DESCRIPTION

[0025] The present invention will be further described below with reference to the accompanying drawings and specific embodiments so that those skilled in the art can better understand the present invention and implement it. However, the embodiments are not intended to limit the present invention.

[0026] Example 1

[0027] See also Figure 1As shown, this embodiment provides a gallium nitride power amplifier, which includes: a tube core 100; a first package body 200, which includes a first packaging part 240 and a pad 210, the first packaging part 240 is connected to the pad 210, the tube core is packaged in the first packaging part 240 and supported on the pad 210 to form a pre-packaged structure for the tube core; a second package body 300, the pre-packaged structure is arranged inside the second package body 300, and the tube core is connected to the pins of the second package body 300 through the first package body 200.

[0028] The gallium nitride power amplifier described in this embodiment pre-packages the die 100 with a first package body 200, and then re-packages the pre-packaged structure with a second package body 300. Based on this structure, it can significantly reduce the bonding inductance of the source of the die 100, thereby improving the gain performance of the die 100 and reducing parasitic parameters. At the same time, the pads 210 provided in the first package body 200 directly contact the die 100, thereby achieving a large-area heat dissipation effect, thereby stabilizing the operating environment of the die 100 and extending the service life of the components. In addition, compared with traditional packaging structures, this application also has the advantages of comprehensive packaging, easy installation and connection, small size, and a wide range of application scenarios.

[0029] See also Figure 1 and Figure 2 As shown, the first package body 200 in this embodiment is arranged around the tube core 100. As the core structure of the present application, it can be used to improve and reduce the wire bonding inductance of the source of the tube core 100, while also having efficient electrical conduction and heat dissipation effects. Furthermore, the tube core 100 in this embodiment is configured to include an enhancement-type and a depletion-type gallium nitride tube core 100, which is supported and connected to the pad 210. Specifically, the tube core 100 includes a tube body and a gold-plated layer, and the gold-plated layer is coated on the surface of the tube body to facilitate subsequent wire bonding. In other embodiments, the epitaxial layer substrate of the tube core 100 can also use a substrate such as sapphire and silicon carbide.

[0030] The pad 210 in this embodiment is preferably a copper PAD with a thickness of 40 μm. Its actual thickness is typically set to 35-45 μm, and this is not specifically limited in the present invention. In its thickness direction, the projected area of ​​the pad 210 is larger than the projected area of ​​the die 100, thereby facilitating the connection and fixation of the first packaging portion 240. Furthermore, to improve the connection stability between the die 100 and the pad 210, the first package body 200 in this embodiment also includes a first connection layer, which is disposed between the first packaging portion 240 and the first connection layer. The base material of the first connection layer is preferably an electrically conductive and thermally conductive material.

[0031] See also Figure 2As shown, at least one connecting through-hole 220 is provided on the first packaging part 240, and one end of any of the connecting through-holes 220 is connected to the outside world, and the other end extends to the pad 210, and the source of the tube core 100 is connected to the connecting through-hole 220. Specifically, in this embodiment, two connecting through-holes 220 are provided on the first packaging part 240. On the one hand, the connecting through-hole 220 serves as part of the thermal management structure to help heat be transferred from the inside of the chip to the outside, thereby improving the heat dissipation performance. On the other hand, it can also facilitate the connection of the source of the tube core 100. In the actual production and processing process, the position and number of the connecting through-holes 220 need to be arranged according to the actual structural layout and thermal management requirements. The present utility model does not impose specific restrictions on this. Furthermore, in this embodiment, the source of the tube core 100 is connected to the connecting through-hole 220, and the two are connected using bumpless packaging technology (Surface Mount Technology, SMT). Specifically, to achieve the above-mentioned connection structure, the first package body 200 also includes at least one thinned dielectric portion 230. At least one thinned dielectric portion 230 (RDL / Reduced Dielectric Layer) is arranged in the first packaging portion 240 and is respectively arranged between the tube core 100 and at least one of the connecting through holes 220. The pad of the tube core 100 can thin the conductive layer connection on the dielectric portion 230, thereby simplifying the packaging process and reducing the complexity and cost of bump manufacturing. In addition, bump-free packaging technology can also reduce parasitic effects caused by bumps, such as parasitic inductance and capacitance, thereby improving high-frequency performance.

[0032] It is worth noting that in order to ensure that there are two typical ones while reducing material costs, the solder pad in this embodiment is preferably a copper component, so anti-oxidation treatment is required on its surface. Specifically, the solder pad in this embodiment includes a main body and an anti-oxidation layer, and the anti-oxidation layer is coated on the surface of the main body. Specifically, it specifically achieves the purpose of preventing surface copper oxidation through OSP processing technology.

[0033] Specifically, in the actual processing process, the gallium nitride die 100 first needs to be mounted on the anti-oxidation treatment pad 210 through the first connection layer, and then the connecting through-hole 220 is prepared on the first packaging part 240, and the source of the die 100 is connected to the connecting through-hole 220 through the bumpless packaging technology. Next, the gate and drain of the die 100 are bumplessly packaged through the first packaging part 240 and gold-plated, thereby completing the packaging process of the die 100.

[0034] See also Figure 2As shown, the second package body 300 includes a second packaging part 330 and a mounting part 320, the second packaging part 330 is arranged on the mounting part 320, the first package body 200 is arranged in the second packaging part 330, and is supported by the mounting part 320. Specifically, the mounting part 320 is arranged at the center of the bottom surface of the second packaging part 330, and is preferably a copper component for electrical and thermal conductivity. It is used to provide a mounting platform for the first package body 200, thereby improving the connection stability between the first package body 200 and the second package body 300 and the connection effect of the serial number. Specifically, the second package body 300 also includes a second connection layer, which is arranged between the second packaging part 330 and the second connection layer. Similarly, the second connection layer is set to a material that can have both thermal and electrical conductivity effects, and it can be set to the same element as the first connection layer.

[0035] The second package body 300 in this embodiment has a length of 4.50 mm, a width of 2.45 mm, and a height of 1.55 mm. Based on this small-size structure, it can be applied to a variety of space-constrained application scenarios. In other embodiments, the length of the second package body 300 can be configured to be 4.20 to 4.70 mm, the width can be configured to be 2.40 to 2.50 mm, and the height can be configured to be 1.50 to 1.60 mm. The present invention does not impose specific restrictions on this. Furthermore, after connecting the first package body 200 to the mounting portion 320, it is necessary to connect the die 100 to the pad 210 and the pin 310 through a wire 400. For the specific connection logic relationship, see Figure 3 As shown, after that, a molding material may be selected for molding according to the power and heat consumption requirements of the actual product to complete the preparation process of the second packaging body 300 .

[0036] In various embodiments, the GaN power amplifier can retain the back-gold back-via process during processing, thereby reducing source inductance and increasing heat dissipation. Alternatively, the GaN power amplifier can be fabricated without the back-gold back-via process and instead utilize a substrate with good thermal conductivity, such as silicon carbide, with wire bonding performed via surface pads. Although the leads of each pin 310 are relatively long, sufficient margin is still available for operation below 3 GHz. Furthermore, for GaN power amplifiers requiring high frequencies or having substrates with poor thermal conductivity, GaN pre-packaged packaging can also be used.

[0037] Example 2

[0038] This embodiment provides a device, which includes the gallium nitride power amplifier described in the first embodiment.

[0039] In summary, the gallium nitride power amplifier and device described in the present invention pre-packages the die 100 with a first package body 200, and then re-packages the pre-packaged structure with a second package body 300. Based on this structure, it can significantly reduce the bonding inductance of the source of the die 100, thereby achieving the purpose of improving the gain performance of the die 100 and reducing parasitic parameters. At the same time, the pads 210 provided in the first package body 200 directly contact the die 100, thereby achieving a large-area heat dissipation effect, thereby stabilizing the operating environment of the die 100 and extending the service life of the components. In addition, compared with traditional packaging structures, the present application also has the advantages of comprehensive packaging, easy installation and connection, small size, and a wide range of application scenarios.

[0040] Obviously, the above embodiments are merely examples for clarity of explanation and are not intended to limit the implementation methods. Those skilled in the art will readily appreciate that other variations or modifications based on the above descriptions are possible. It is not necessary and impossible to enumerate all implementation methods here. Obvious variations or modifications arising therefrom remain within the scope of protection of the present invention.

Claims

1. A gallium nitride power amplifier, characterized in that: include: tube core; a first package body comprising a first packaging portion and a solder pad, wherein the first packaging portion is connected to the solder pad, and the die is packaged in the first packaging portion and supported on the solder pad to form a pre-packaged structure for the die; A second package body, wherein the pre-package structure is arranged inside the second package body, and the die is connected to the pins of the second package body through the first package body.

2. The gallium nitride power amplifier according to claim 1, wherein: At least one connecting through hole is provided on the first packaging portion, one end of any connecting through hole is connected to the outside, and the other end extends to the pad, and the tube core source is connected to the connecting through hole.

3. The gallium nitride power amplifier according to claim 2, wherein: The first package body further includes at least one thinned dielectric portion, and the at least one thinned dielectric portion is disposed in the first package portion and is respectively disposed between the tube die and at least one connecting through hole.

4. The gallium nitride power amplifier according to claim 1, wherein: The first package body further includes a first connection layer, and the first connection layer is disposed between the first package portion and the first connection layer.

5. The gallium nitride power amplifier according to claim 1, wherein: The second packaging body includes a second packaging portion and a mounting portion. The second packaging portion is disposed on the mounting portion. The first packaging body is disposed in the second packaging portion and supported by the mounting portion.

6. The gallium nitride power amplifier according to claim 5, wherein: The second package body further includes a second connection layer, and the second connection layer is disposed between the second package portion and the second connection layer.

7. The gallium nitride power amplifier according to claim 1, wherein: The pad includes a body and an anti-oxidation layer, and the anti-oxidation layer is coated on the surface of the body.

8. The gallium nitride power amplifier according to claim 1, wherein: The tube core comprises a tube body and a gold-plated layer, and the gold-plated layer is coated on the surface of the tube body.

9. The gallium nitride power amplifier according to claim 1, wherein: The pad has a thickness of 35 to 45 μm, the second package body has a length of 4.20 to 4.70 mm, a width of 2.40 to 2.50 mm, and a height of 1.50 to 1.60 mm.

10. A device, characterized in that: The gallium nitride power amplifier comprises the gallium nitride power amplifier according to any one of claims 1 to 9.

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