Semiconductor module laser

Abstract

The utility model discloses a semiconductor module laser which comprises a semiconductor laser module and a transition heat sink, the lower end face of the transition heat sink is provided with one or more grooves, the grooves are filled with heat conduction silicone grease, heat pipes are installed in the grooves, and the transition heat sink is provided with a limiting installation structure. The limiting installation structure comprises a heat source positioning plate, a positioning rod, a spring and a limiting block, a fixing block is arranged above the heat source positioning plate, the longitudinal section of the positioning rod is in an L shape, the limiting block is arranged at the lower end of the positioning rod, and the spring fixedly connected with the fixing block is arranged on the right side of the upper end of the limiting block. According to the limiting installation structure, the positioning rod is pulled upwards to enable the spring to stretch out and draw back, so that the limiting block is separated from the limiting groove, disassembly is convenient, when reinstallation is needed after disassembly, the positioning rod is loosened, the limiting block is inserted into the limiting groove again under the action of the spring, and therefore the limiting installation structure can be disassembled and installed conveniently, and use is more flexible.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor lasers, in particular to a semiconductor module laser. Background Art

[0002] Semiconductor lasers, with their advantages of small size, light weight, high efficiency, long life, and wide wavelength range, have become a core component in the new century, characterized by rapid development, numerous achievements, widespread interdisciplinary penetration, and a wide range of applications. As semiconductor laser technology continues to develop and mature, its unique advantages continue to expand, and the application of semiconductor lasers will become even more widespread. Currently, semiconductor lasers often use heat transfer through transition heat sinks to dissipate heat.

[0003] However, the current transitional heat sink method of heat conduction still has many shortcomings. For example, the heat dissipation effect is average and cannot meet the heat dissipation requirements of semiconductor lasers. It is inconvenient to install and disassemble the semiconductor laser, and it takes a lot of time to install or repair. Utility Model Content

[0004] The purpose of the utility model is to solve the technical problems existing in the prior art and provide a semiconductor module laser.

[0005] To achieve the above-mentioned purpose, the technical solution provided by the utility model is: a semiconductor module laser, comprising a semiconductor laser module and a transition heat sink, wherein one or more grooves are provided on the lower end surface of the transition heat sink, the grooves are filled with thermal grease, a heat pipe is installed in the groove, a limited position mounting structure is provided on the transition heat sink, the limited position mounting structure comprises a heat source positioning plate, a positioning rod, a spring and a limit block, a fixed block is provided above the heat source positioning plate, the longitudinal section of the positioning rod is "L"-shaped, a limited position block is provided at the lower end of the positioning rod, and a spring fixedly connected to the fixed block is provided on the right side of the upper end of the limit block.

[0006] Preferably, the front and rear sides of the transition heat sink are provided with heat dissipation fin structures, and the heat dissipation fin structure is composed of n pieces of parallel-arranged plate-mounted heat dissipation structures with a certain interval, wherein n>2.

[0007] Preferably, the heat pipes are arranged in one of the following shapes: horizontal, vertical, U-shaped, S-shaped, rectangular and circular.

[0008] Preferably, limiting grooves are provided on both sides of the transition heat sink, and the limiting blocks are used in conjunction with the limiting grooves.

[0009] Preferably, the limiting block is a magnet, and the bottom of the inner wall of the guide groove is made of iron.

[0010] Preferably, a limiting pad is provided on the heat source positioning plate.

[0011] Preferably, the semiconductor laser module includes a substrate, a laser chip, a ceramic substrate with a metal surface, a positive electrode block and a negative electrode block;

[0012] The metal-clad ceramic substrate is a substrate with copper clad in a centrally symmetrical manner on the surface of the substrate. Two L-shaped conductive areas that do not touch each other are provided, serving as the lead-out positive electrode area and the lead-out negative electrode area respectively. The bottoms of the positive and negative electrode blocks are respectively welded and fixed to the long parts of the two L-shaped conductive areas.

[0013] The laser chip is welded between the positive electrode block and the negative electrode block, and the laser direction is perpendicular to the ceramic substrate with a metal surface. The short parts of the two L-shaped conductive areas of the ceramic substrate with a metal surface are provided with mounting holes. The transition heat sink is provided with mounting holes that match the short parts of the two L-shaped conductive areas. The semiconductor laser module is mechanically mounted on the transition heat sink through the mounting holes.

[0014] Preferably, the metal layer of the ceramic substrate with a metal layer on the surface is a copper layer or a copper-tungsten layer with a thickness of 50 microns to 800 microns. The copper layer or the copper-tungsten layer can be covered with a gold layer with a thickness of 0.05 microns to 0.5 microns.

[0015] Beneficial effects of the utility model:

[0016] 1. The lower end surface of the transition heat sink in this invention is provided with a heat pipe. The heat pipe fully utilizes the principle of heat conduction and the rapid heat transfer properties of phase change medium to quickly transfer the heat from the heating object to the heat source. Its thermal conductivity exceeds that of any known metal, greatly improving the heat dissipation efficiency compared to traditional transition heat sinks without heat pipes.

[0017] 2. The utility model pulls the positioning rod upward to make the spring expand and contract, thereby separating the limit block from the limit slot, which is convenient for disassembly. When reinstallation is required after disassembly, the positioning rod is loosened and the limit block is reinserted into the limit slot under the action of the spring, thereby facilitating the disassembly and installation of the limit installation structure and making it more flexible to use. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The schematic embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation on the present invention.

[0019] Figure 1 This is a schematic diagram of the semiconductor laser of the utility model;

[0020] Figure 2 This is a top view of the structure of the semiconductor laser of the utility model;

[0021] Figure 3It is a top view schematic diagram of the transition heat sink of the utility model;

[0022] Figure 4 It is an enlarged schematic diagram of the structure of point A of the present utility model.

[0023] Figure annotation:

[0024] 1-Semiconductor laser module 2-Cathode block 3-Positive block 4-Ceramic substrate with metal coating 5-Laser chip 6-Laser direction 7-Transition heat sink 8-Heat source positioning plate 9-Limiting pad 10-Mounting hole 11-Positive electrode area 12-Negative electrode area 13-Heat dissipation fin structure 14-Heat pipe 15-Groove 16-Fixed block 17-Positioning rod 18-Spring 19-Limiting block 20-Limiting groove 21-Substrate. DETAILED DESCRIPTION

[0025] This section will describe in detail the specific embodiments of the present invention. The preferred embodiments of the present invention are shown in the accompanying drawings. The purpose of the accompanying drawings is to supplement the description of the text part of the specification with graphics, so that people can intuitively and vividly understand each technical feature and overall technical solution of the present invention, but it cannot be understood as a limitation on the scope of protection of the present invention.

[0026] In the description of the present invention, it should be understood that descriptions involving orientations, such as up, down, front, back, left, right, etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limitations on the present invention.

[0027] In the description of this utility model, "several" means one or more, "many" means more than two, "greater than," "less than," and "exceed" are understood to exclude the number itself, while "above," "below," and "within" are understood to include the number itself. The use of "first" and "second" in the description is solely for the purpose of distinguishing technical features and is not to be construed as indicating or implying relative importance, implicitly specifying the number of the indicated technical features, or implicitly specifying the order of the indicated technical features.

[0028] In the description of the present invention, unless otherwise clearly defined, terms such as setting, installing, and connecting should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in the present invention based on the specific content of the technical solution.

[0029] Reference Figures 1-4A preferred embodiment of the present invention is a semiconductor module laser, comprising a semiconductor laser module 1 and a transition heat sink 7, wherein one or more grooves 15 are provided on the lower end surface of the transition heat sink 7, wherein the grooves 15 are filled with thermal grease, and a heat pipe 14 is installed in the grooves 15.

[0030] Furthermore, the heat pipes 14 are arranged in one of the following shapes: horizontal, vertical, U-shaped, S-shaped, rectangular and circular.

[0031] Specifically, the heat pipe 14 fully utilizes the principle of heat conduction and the rapid heat transfer properties of the phase change medium, and quickly transfers the heat of the heating object to the outside of the transition heat sink 7 through the heat pipe 14. Its thermal conductivity exceeds the thermal conductivity of any known metal, and the heat dissipation efficiency is greatly improved compared to the traditional transition heat sink 7 without a heat pipe 7.

[0032] In this embodiment, a limiting mounting structure is provided on the transition heat sink 7, and the limiting mounting structure includes a heat source positioning plate 8, a positioning rod 17, a spring 18 and a limiting block 19. A fixed block 16 is provided above the heat source positioning plate 8, and the longitudinal section of the positioning rod 17 is "L"-shaped. A limiting block 19 is provided at the lower end of the positioning rod 17, and a spring 18 fixedly connected to the fixed block 16 is provided on the right side of the upper end of the limiting block 19.

[0033] Furthermore, limiting grooves 20 are provided on both sides of the transition heat sink 7 , and the limiting blocks 19 are used in conjunction with the limiting grooves 20 .

[0034] Furthermore, the limit block 19 is a magnet, and the inner wall bottom of the guide groove 20 is made of iron. The magnetic cooperation between the limit block 19 and the guide groove 20 is used to position the limit block 19.

[0035] Furthermore, a limiting pad 9 is provided on the heat source positioning plate 8 to facilitate limiting the transition heat sink 7 .

[0036] Specifically, by pulling the positioning rod 17 upward, the spring 18 is extended and retracted, thereby separating the limit block 19 from the limit slot 20, making it easier to disassemble. When reinstallation is required after disassembly, the positioning rod 17 is released, and the limit block 19 is reinserted into the limit slot 20 under the action of the spring 18, thereby facilitating the disassembly and installation of the limit installation structure and making it more flexible to use.

[0037] In this embodiment, heat dissipation fin structures 13 are provided on the front and rear sides of the transition heat sink 7 . The heat dissipation fin structure 13 is composed of n parallel-arranged plate-mounted heat dissipation structures with a certain spacing, where n>2.

[0038] In this embodiment, the semiconductor laser module 1 includes a substrate 21, a laser chip 5, a ceramic substrate 4 with a metal surface, a positive electrode block 3 and a negative electrode block 2; the ceramic substrate 4 with a metal surface is a thermally conductive and insulating substrate 21 with a copper coating in a centrally symmetrical manner, and has two L-shaped conductive areas that do not contact each other, which serve as a positive lead-out electrode area 11 and a negative lead-out electrode area 12, respectively. The metal used for the coating is a metal with high thermal conductivity, such as copper or copper tungsten; the bottoms of the positive electrode block 3 and the negative electrode block 2 are respectively welded and fixed to the long parts of the two L-shaped conductive areas, the laser chip 5 is welded between the positive electrode block 3 and the negative electrode block 2, and the laser direction 6 is perpendicular to the ceramic substrate 4 with a metal surface; the short parts of the two L-shaped conductive areas of the ceramic substrate 4 with a metal surface are provided with mounting holes 10; the transition heat sink 7 is provided with mounting holes 10 that match the short parts of the two L-shaped conductive areas; the semiconductor laser module 1 is mechanically mounted on the transition heat sink through the mounting holes 10.

[0039] Furthermore, the metal layer of the ceramic substrate 4 with a metal layer on the surface is a copper layer or a copper tungsten layer, and the thickness of the copper layer or the copper tungsten layer is 50 microns to 800 microns. The copper layer or the copper tungsten layer can be covered with a gold layer with a thickness of 0.05 microns to 0.5 microns. The copper layer structure has high mechanical strength, and the semiconductor laser module 1 can be mechanically mounted on the transition heat sink 7, such as by fixing it with screws.

[0040] The heat pipe 14 is provided on the lower end surface of the transition heat sink 7 in the present invention. The heat pipe 14 fully utilizes the principle of heat conduction and the rapid heat transfer properties of the phase change medium. The heat of the heating object is quickly transferred to the outside of the transition heat sink 7 through the heat pipe 14. Its thermal conductivity exceeds that of any known metal, and the heat dissipation efficiency is greatly improved compared to the traditional transition heat sink 7 without a heat pipe 14.

[0041] Secondly, the utility model pulls the positioning rod 17 upward to make the spring 18 expand and contract, thereby separating the limit block 19 from the limit slot 20, making it easy to disassemble. When reinstallation is needed after disassembly, the positioning rod 17 is loosened, and the limit block 19 is reinserted into the limit slot 20 under the action of the spring 18, thereby facilitating the disassembly and installation of the limit installation structure and making it more flexible to use.

[0042] Under the premise that no conflict occurs, those skilled in the art may freely combine and superimpose the above-mentioned additional technical features.

[0043] The above description is only a preferred embodiment of the present invention. Any technical solution that achieves the purpose of the present invention by substantially the same means shall fall within the scope of protection of the present invention.

Claims

1. A semiconductor module laser, characterized in that: It includes a semiconductor laser module and a transition heat sink. One or more grooves are provided on the lower end surface of the transition heat sink. The grooves are filled with thermal grease. A heat pipe is installed in the groove. A limited mounting structure is provided on the transition heat sink. The limited mounting structure includes a heat source positioning plate, a positioning rod, a spring and a limit block. A fixed block is provided above the heat source positioning plate. The longitudinal section of the positioning rod is "L"-shaped. A limited block is provided at the lower end of the positioning rod. A spring fixedly connected to the fixed block is provided on the right side of the upper end of the limit block.

2. The semiconductor module laser according to claim 1, characterized in that: The front and rear sides of the transition heat sink are provided with heat dissipation fin structures, which are composed of n pieces of parallel-arranged sheet-mounted heat dissipation structures with a certain spacing, wherein n>2.

3. The semiconductor module laser according to claim 1, characterized in that: The heat pipes are arranged in one of horizontal, vertical, U-shaped, S-shaped, rectangular and circular shapes.

4. The semiconductor module laser according to claim 1, characterized in that: Limiting grooves are provided on both sides of the transition heat sink, and the limiting blocks are used in conjunction with the limiting grooves. The limiting blocks are magnets, and the inner wall bottom of the guide groove is made of iron.

5. The semiconductor module laser according to claim 1, characterized in that: A limiting pad is provided on the heat source positioning plate.

6. The semiconductor module laser according to claim 1, characterized in that: The semiconductor laser module includes a substrate, a laser chip, a ceramic substrate with a metal coating on the surface, a positive electrode block and a negative electrode block; The metal-clad ceramic substrate is a substrate with copper clad in a centrally symmetrical manner on the surface of the substrate. Two L-shaped conductive areas that do not touch each other are provided, serving as the lead-out positive electrode area and the lead-out negative electrode area respectively. The bottoms of the positive and negative electrode blocks are respectively welded and fixed to the long parts of the two L-shaped conductive areas. The laser chip is welded between the positive electrode block and the negative electrode block, and the laser direction is perpendicular to the ceramic substrate with a metal surface. The short parts of the two L-shaped conductive areas of the ceramic substrate with a metal surface are provided with mounting holes. The transition heat sink is provided with mounting holes that match the short parts of the two L-shaped conductive areas. The semiconductor laser module is mechanically mounted on the transition heat sink through the mounting holes.

7. The semiconductor module laser according to claim 6, characterized in that: The metal layer of the ceramic substrate with a metal layer on the surface is a copper layer or a copper-tungsten layer with a thickness of 50 microns to 800 microns. The copper layer or the copper-tungsten layer can be covered with a gold layer with a thickness of 0.05 microns to 0.5 microns.

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