Crucible structure

Abstract

The utility model provides a crucible structure, and relates to the technical field of semiconductor single crystal preparation. The crucible structure comprises a crucible body which is used for placing raw materials; the seed crystal support is arranged at the first end of the crucible body and connected with the crucible body, the seed crystal support is provided with a first circulation channel, at least part of the first circulation channel is an inclined plane, and the first circulation channel is communicated with the crucible body and used for conveying sublimated raw materials; the crucible cover covers the second end of the seed crystal support and is connected with the seed crystal support, seed crystals are arranged at the end, facing the seed crystal support, of the crucible cover, the inclined face of the first circulation channel inclines towards the direction of the seed crystals, and sublimated raw materials are conveyed to the seed crystals through the first circulation channel to form silicon carbide single crystals.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor single crystal preparation, and in particular to a crucible structure. Background Art

[0002] Silicon carbide (SiC), a representative of third-generation semiconductors, possesses excellent physical and chemical properties, including a wide bandgap, high thermal conductivity, high electron saturation mobility, and a strong critical breakdown field. This makes it a widely used material in fields such as 5G communications, aerospace, radar communications, electronic devices, and high-frequency devices. Currently, the most successful method for preparing SiC single crystals is the physical vapor transfer method (PVT). The basic principle of growing SiC single crystals is to place SiC powder at the bottom of a growth crucible and attach a seed crystal to the top of the crucible lid. The presence of the seed crystal effectively suppresses spontaneous nucleation during SiC growth, effectively improving the quality of the grown SiC single crystal. Furthermore, the crucible is wrapped with an insulating layer to insulate it. This layer effectively maintains a stable internal temperature, reduces heat loss, and lowers production costs.

[0003] However, the existing crucible structure is unreasonable, resulting in the inability to generate a temperature field and temperature gradient conducive to the growth of silicon carbide single crystals inside the crucible when the crucible is subjected to electromagnetic induction heating. As a result, the silicon carbide single crystal has problems such as small crystal size, unstable crystal shape, and many defects and impurities.

[0004] Therefore, how to provide a crucible that can improve the growth quality of silicon carbide single crystals has become an urgent problem to be solved. Utility Model Content

[0005] A technical problem to be solved by this application is: how to improve the growth quality of silicon carbide single crystals.

[0006] To solve the above technical problems, the present invention provides a crucible structure, comprising:

[0007] Crucible body, which is used to place raw materials;

[0008] A seed crystal drag is disposed at a first end of the crucible body and connected to the crucible body, the seed crystal drag having a first flow channel at least partially inclined, the first flow channel being in communication with the crucible body for transporting sublimated raw materials;

[0009] The crucible cover is arranged at the second end of the seed crystal drag and is connected to the seed crystal drag. A seed crystal is provided at one end of the crucible cover facing the seed crystal drag. The inclined surface of the first flow channel is inclined toward the direction of the seed crystal. The sublimated raw material is transferred to the seed crystal through the first flow channel to form a silicon carbide single crystal.

[0010] In some embodiments, the seed crystal drag includes a first seed crystal drag and a second seed crystal drag, the first seed crystal drag is arranged in the second seed crystal drag, the first seed crystal drag is attached to the inner wall of the second seed crystal drag, and the first seed crystal drag is closer to the crucible cover relative to the second seed crystal drag; the first seed crystal drag is a hollow cylindrical structure, the diameter of the first seed crystal drag close to the crucible cover is equal to the diameter of the seed crystal, and the seed crystal is sealed at the end of the first seed crystal drag close to the crucible cover; the second seed crystal drag and the first seed crystal together form a first flow channel, and the inclined surface in the first flow channel is arranged close to the crucible body.

[0011] In some embodiments, the inner wall of the second seed crystal drag has an annular boss between the first side and the second side, the first seed crystal drag is arranged on the annular boss and is connected to the second seed crystal drag through the annular boss; the inclined surface extends from the edge of one end of the second seed crystal drag close to the crucible body to the edge of the inner circle of the annular boss.

[0012] In some embodiments, a plurality of graphite rods extending in the axial direction are evenly disposed in the crucible body, and ends of the graphite rods close to the seed crystal drag are flush with the top of the crucible body close to the seed crystal drag.

[0013] In some embodiments, further comprising:

[0014] The pressure ring and the pressure sheet are both pressed on one end of the multiple graphite rods close to the seed crystal drag. The pressure sheet is a circular structure pressed on the central area of ​​the multiple graphite rods. The pressure ring surrounds the pressure sheet and has an annular space between it and the pressure sheet. The annular space is connected to the first flow channel.

[0015] In some embodiments, the wall thickness of the crucible body at an end close to the seed drag is greater than the wall thickness at an end away from the seed drag.

[0016] In some embodiments, the thickness of the first seed crystal drag is equal to the ring width of the annular boss, and the height of the first seed crystal drag along the axial direction is less than the height from the annular boss to the end of the second seed crystal drag close to the crucible cover.

[0017] In some embodiments, the inner wall of the second end of the second seed crystal drag has a first connector, the end of the crucible cover close to the seed crystal drag has a second connector adapted to the first connector, and the second seed crystal drag and the crucible cover are connected through the first connector and the second connector.

[0018] In some embodiments, an edge area of ​​the crucible cover near one end of the seed crystal drag is provided with an annular first groove body adapted for the first seed crystal drag, and a portion of the first seed crystal drag extends into the first groove body and is connected to the crucible cover.

[0019] In some embodiments, a third connecting member is provided on the outer wall of the first end of the second seed crystal drag, and the third connecting member is arranged corresponding to the area where the inclined surface is located; a fourth connecting member is provided on the side of the crucible body close to the seed crystal drag, and the third connecting member and the fourth connecting member cooperate to connect the second seed crystal drag to the crucible body.

[0020] Through the above technical solution, the present application provides a crucible structure, including a crucible body, a seed crystal drag, and a crucible lid. The crucible body is used to place silicon carbide raw material, the seed crystal drag is arranged between the crucible body and the crucible lid, the crucible body is provided at the first end of the seed crystal drag, and the crucible lid is provided at the second end of the seed crystal drag, and the crucible body and the crucible lid are connected by the seed crystal drag. The seed crystal drag has a first flow channel with at least a partially inclined surface. The crucible body is provided with a seed crystal at one end of the seed crystal drag, and the inclined surface of the first flow channel is inclined toward the seed crystal, so that the first flow channel with at least a partially inclined surface can guide the sublimated raw material so that the sublimated raw material can be evenly distributed on the seed crystal, so that there is a sufficient supply of raw material for the growth of silicon carbide single crystals, and the production of silicon carbide polycrystals is avoided, thereby improving the growth quality of the silicon carbide crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0022] Figure 1 is a cross-sectional view of a crucible structure disclosed in an embodiment of the present application;

[0023] Figure 2 is a cross-sectional view of an exploded view of a crucible structure disclosed in an embodiment of the present application;

[0024] Figure 3 This is an exploded view of a crucible structure disclosed in an embodiment of the present application;

[0025] Figure 4 This is a schematic diagram of a structure in which a second seed crystal is dragged in one direction, as disclosed in an embodiment of the present application;

[0026] Figure 5 This is a schematic diagram of a structure in which a second seed crystal is dragged in another direction, as disclosed in an embodiment of the present application;

[0027] Figure 6 This is a schematic structural diagram of a crucible cover disclosed in an embodiment of the present application;

[0028] Figure 7This is a schematic diagram of a connection between a crucible structure and a heating element crucible disclosed in an embodiment of the present application.

[0029] Description of reference numerals:

[0030] 1. Crucible structure; 11. Crucible body; 111. Graphite rod; 112. Fourth connecting piece; 12. Seed crystal drag; 121. First seed crystal drag; 122. Second seed crystal drag; 1221. Inclined surface; 1222. Annular boss; 1224. First connecting piece; 1225. Third connecting piece; 13. Crucible cover; 131. Second connecting piece; 132. First trough body; 14. Pressing ring; 15. Pressing sheet; 2. Seed crystal; 3. Heating element crucible. DETAILED DESCRIPTION

[0031] The following detailed description of the embodiments of the present application is provided in conjunction with the accompanying drawings and examples. The detailed description of the following examples and the accompanying drawings are intended to illustrate the principles of the present application, but are not intended to limit the scope of the present application. The present application may be implemented in many different forms and is not limited to the specific embodiments disclosed herein, but rather includes all technical solutions within the scope of the claims.

[0032] The present application provides these embodiments to make this application thorough and complete, and to fully express the scope of this application to those skilled in the art. It should be noted that: unless otherwise specifically stated, the relative arrangement of parts and steps, the composition of materials, numerical expressions and numerical values ​​set forth in these embodiments should be interpreted as merely exemplary, and not as limiting.

[0033] It should be noted that, in the description of this application, unless otherwise specified, "plurality" means greater than or equal to two; the terms "upper," "lower," "left," "right," "inner," "outer," and the like, indicating directions or positional relationships, are intended solely to facilitate the description of this application and simplify the description, and do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on this application. When the absolute position of the object being described changes, the relative positional relationship may also change accordingly.

[0034] In addition, the terms "first," "second," and similar terms used in this application do not denote any order, quantity, or importance, but are simply used to distinguish different parts. "Perpendicular" does not mean perpendicular in the strict sense, but rather means within the tolerance range. "Parallel" does not mean parallel in the strict sense, but rather means within the tolerance range. "Include" or "comprising" and similar terms mean that the elements preceding the word include the elements listed after the word, and do not exclude the possibility of other elements being included.

[0035] It should also be noted that, in the description of this application, unless otherwise expressly specified or limited, the terms "installed," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; they can refer to direct connections or indirect connections through an intermediary. A person of ordinary skill in the art will understand the specific meanings of the above terms in this application depending on the specific circumstances. When a specific device is described as being located between a first device and a second device, there may or may not be an intervening device between the specific device and the first or second device.

[0036] All terms used in this application have the same meaning as understood by one of ordinary skill in the art to which this application belongs, unless otherwise specifically defined. It should also be understood that terms defined in, for example, common dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and should not be interpreted in an idealized or highly formal sense, unless explicitly defined as such herein.

[0037] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered part of the specification.

[0038] like Figures 1 to 7 As shown, the present application provides a crucible structure 1, comprising:

[0039] Crucible body 11, crucible body 11 is used for placing raw materials;

[0040] A seed crystal drag 12 is disposed at a first end of the crucible body 11 and connected to the crucible body 11. The seed crystal drag 12 has a first flow channel at least partially formed as an inclined surface 1221. The first flow channel is in communication with the crucible body 11 for transporting sublimated raw materials.

[0041] The crucible cover 13 is provided on the second end of the seed crystal drag 12 and is connected to the seed crystal drag 12. A seed crystal 2 is provided at one end of the crucible cover 13 facing the seed crystal drag 12. The inclined surface 1221 of the first flow channel is inclined toward the direction of the seed crystal 2. The sublimated raw material is transferred to the seed crystal 2 through the first flow channel to form a silicon carbide single crystal.

[0042] The present application provides a crucible structure 1, comprising a crucible body 11, a seed crystal drag 12 and a crucible cover 13. The crucible body 11 is used to place silicon carbide raw materials, and the seed crystal drag 12 is arranged between the crucible body 11 and the crucible cover 13. The crucible body 11 is provided at the first end of the seed crystal drag 12, and the crucible cover 13 is provided at the second end of the seed crystal drag 12. The crucible body 11 and the crucible cover 13 are connected by the seed crystal drag 12. Figure 7As shown, a heating element crucible 3 is connected to the outside of the crucible structure 1 through a truncated cone interlocking connection. An electromagnetic induction heating device is provided between the heating element crucible 3 and the crucible structure 1 to heat the crucible structure 1. After a high-frequency current is passed through, an eddy current is generated in the crucible structure 1 by electromagnetic induction, and then heat is generated for the decomposition and sublimation of the raw material. In addition, a heat-insulating layer is wrapped around the outside of the crucible structure 1 for heat insulation. A first flow channel having at least a portion of an inclined surface 1221 is provided in the seed crystal drag 12. A seed crystal 2 is provided at one end of the crucible body 11 facing the seed crystal drag 12, and the inclined surface 1221 in the first flow channel is inclined from the seed crystal 2, so that the first flow channel having at least a portion of an inclined surface 1221 can guide the sublimated raw material so that the sublimated raw material can be evenly distributed on various parts of the seed crystal 2, so that the growth of the silicon carbide single crystal has a sufficient supply of raw materials, thereby avoiding the production of silicon carbide polycrystals, thereby improving the growth quality of the silicon carbide crystal.

[0043] In the embodiment of the present application, the seed crystal drag 12 includes a first seed crystal drag 121 and a second seed crystal drag 122. The first seed crystal drag 121 is arranged in the second seed crystal drag 122. The first seed crystal drag 121 is attached to the inner wall of the second seed crystal drag 122. The first seed crystal drag 121 is close to the crucible cover 13 relative to the second seed crystal drag 122; the first seed crystal drag 121 is a hollow cylindrical structure, and the diameter of the end of the first seed crystal drag 121 close to the crucible cover 13 is equal to the diameter of the seed crystal 2. The seed crystal 2 is blocked at the end of the first seed crystal drag 121 close to the crucible cover 13; the second seed crystal drag 122 and the first seed crystal 2 together form a first circulation channel, and the inclined surface 1221 in the first circulation channel is arranged close to the crucible body 11.

[0044] In this embodiment, the seed crystal drag 12 includes a first seed crystal drag 121 and a second seed crystal drag 122 . The first seed crystal drag 121 is a cylindrical structure, and the second seed crystal drag 122 is a hollow cylindrical structure. The first seed crystal drag 121 is disposed in the second seed crystal drag 122 and is in contact with the side wall of the second seed crystal drag 122 . The second seed crystal drag 122 has an inclined surface 1221 on its inner wall at one end close to the crucible body 11, and the inclined surface 1221 is connected to the inner wall of the first seed crystal drag 121 to form a first circulation channel, and the first seed crystal drag 121 is provided with a seed crystal 2 at one end close to the crucible cover 13. The diameter of the seed crystal 2 is the same as that of the first seed crystal drag 121, so that the seed crystal 2 is blocked at the end of the first seed crystal drag 121 close to the crucible cover 13, so that the sublimated raw materials guided through the first circulation channel can be transmitted to the seed crystal 2. When the inclined surface 1221 in the first circulation channel extends from the side close to the crucible body 11 to the side close to the crucible cover 13, it will tilt toward the first seed crystal drag 121, thereby guiding the sublimated raw materials, so that the sublimated raw materials can be evenly distributed on the seed crystal 2, thereby improving the growth quality of the silicon carbide monomer.

[0045] like Figures 1 to 4 As shown, in the embodiment of the present application, the inner wall of the second seed crystal drag 122 has an annular boss 1222 between the first side and the second side, the first seed crystal drag 121 is arranged on the annular boss 1222, and is connected to the second seed crystal drag 122 through the annular boss 1222; the inclined surface 1221 extends from the edge of the side of the second seed crystal drag 122 close to the crucible body 11 to the edge of the inner circle of the annular boss 1222.

[0046] In this embodiment, an annular boss is provided on the inner wall of the second seed crystal drag 122. The annular boss 1222 is located between the first and second ends of the second seed crystal drag 122. The annular boss 1222 is used to support and connect the first seed crystal drag 121. The first seed crystal drag 121 is affixed and connected to the inner wall of the second seed crystal drag 122 via the annular boss 1222, thereby securing the second seed crystal drag 122 within the first seed crystal drag 121. An inclined surface 1221 on the inner wall of the second seed crystal drag 122 is positioned near the crucible body 11. The inclined surface 1221 extends from the edge of the second seed crystal drag 122 on the side closest to the crucible body 11 to the inner edge of the annular boss 122, thereby reducing the radial temperature gradient distribution within the first flow channel. Silicon carbide crystals grown under large radial temperature gradients often contain various defects and multiple crystal polymorphs, resulting in an "M" or "W" surface shape in the grown silicon carbide single crystal. This fails to meet the quality requirements of current market silicon carbide substrate materials. Therefore, this application improves the growth quality of silicon carbide single crystals by reducing the radial temperature gradient range during raw material growth.

[0047] like Figures 1 to 3 As shown, in the embodiment of the present application, a plurality of graphite rods 111 extending in the axial direction are evenly spaced in the crucible body 11 , and the ends of the plurality of graphite rods 111 close to the seed crystal drag 12 are flush with the top of the crucible body 11 close to the seed crystal drag 12 .

[0048] In this embodiment, silicon carbide raw material is disposed at the bottom of the crucible body 11. A plurality of spaced graphite rods 111 are also disposed within the crucible body 11, and the graphite rods 111 are evenly distributed within the raw material within the crucible body 11. The tops of the graphite rods 111 are flush with the top of the crucible body 11, so that after sublimation, the raw material at the bottom of the crucible body 11 extends along the extension direction of the graphite rods 111 into the seed crystal drag 12 connected to the crucible body 11. The graphite rods 111 can improve the flow of the sublimated raw material, allowing it to flow along the extension direction of the graphite rods 111 into the first flow channel within the seed crystal drag 12, thereby growing on the seed crystal 2. This can also prevent graphitization of the raw material and recrystallization of the raw material at the bottom of the crucible body 11. The provision of the graphite rods 111 can also improve the utilization rate of the silicon carbide raw material.

[0049] In the embodiment of the present application, it also includes: a pressure ring 14 and a pressure sheet 15. The pressure ring 14 and the pressure sheet 15 are both pressed onto one end of the multiple graphite rods 111 close to the seed crystal drag 12. The pressure sheet 15 is a circular structure pressed onto the central area of ​​the multiple graphite rods 111. The pressure ring 14 surrounds the pressure sheet 15 and has an annular gap between it and the pressure sheet 15. The annular gap is connected to the first circulation channel.

[0050] In this embodiment, the pressure ring 14 and the pressure sheet 15 can guide the sublimated raw materials, and can evenly and efficiently transfer the sublimated raw materials, guiding the sublimated raw materials from the channel between two adjacent graphite rods 111 to the first circulation channel in the seed crystal drag 12, thereby avoiding the sublimated raw materials from reacting on the inner wall of the crucible body 11, so that the crucible body 11 can be recycled, thereby improving the crystal growth efficiency and reducing the production cost.

[0051] In the embodiment of the present application, the wall thickness of the crucible body 11 at the end close to the seed crystal drag 12 is greater than the wall thickness at the end away from the seed crystal drag 12 .

[0052] In this embodiment, a heating device is provided on the outside of the crucible body 11 to heat the raw material within the crucible body 11, causing the raw material to sublime into gas. The wall thickness of the bottom of the crucible body 11 at the end away from the seed crystal drag 12 is thinner than the wall thickness at the top near the seed crystal drag 12. Therefore, when the power of the heating device along the outer axial direction of the crucible body 11 is the same, the temperature at the bottom of the crucible body 11 is higher than that at the top, thereby accelerating the sublimation of the raw material and saving energy. The thinner wall thickness at the bottom of the crucible body 11 at the end away from the seed crystal drag 12 than the wall thickness at the top near the seed crystal drag 12 also increases the longitudinal temperature gradient of the crucible structure 1. The larger the longitudinal temperature gradient, the faster the growth rate of the silicon carbide single crystal. Therefore, the present application can increase the growth rate of the silicon carbide single crystal.

[0053] In the embodiment of the present application, the thickness of the first seed crystal drag 121 is equal to the ring width of the annular boss 1222 , and the height of the first seed crystal drag 121 along the axial direction is less than the height from the annular boss 1222 to the end of the second seed crystal drag 122 close to the crucible cover 13 .

[0054] In this embodiment, when the protrusion of the first seed crystal drag 121 is embedded in the groove of the annular boss, the first seed crystal drag 121 is connected to the second seed crystal drag 122, and the thickness of the first seed crystal drag 121 is equal to the ring width of the annular boss 1222, so that the first seed crystal drag 121 is attached to the inner wall of the second seed crystal drag 122, and the height of the first seed crystal drag 121 in the axial direction plus the thickness of the seed crystal 2 is equal to the height from the annular boss 1222 to the end of the second seed crystal drag 122 close to the crucible cover 13. Therefore, when the seed crystal 2 is set on the top of the first seed crystal drag 121, the first flow channel formed by the first seed crystal drag 121 and the second seed crystal drag 122 can form a sealed space, which is more conducive to the growth of the seed crystal 2.

[0055] like Figure 3 and Figure 4 As shown, in the embodiment of the present application, a first connecting piece 1224 is provided on the inner wall of the second end of the second seed crystal drag 122, and the end of the crucible cover 13 close to the seed crystal drag 12 has a second connection adapted to the first connecting piece 1224. The second seed crystal drag 122 and the crucible cover 13 are connected through the first connecting piece 1224 and the second connecting piece 131. The edge area of ​​the crucible cover 13 close to the end of the seed crystal drag 12 is provided with a first annular groove body 132 adapted to the first seed crystal drag 121, and part of the first seed crystal drag 121 extends into the first groove body 132 and is connected to the crucible cover 13.

[0056] In this embodiment, the second end of the second seed crystal drag 122, near the crucible lid 13, has a first connector 1224, which is an internal thread on the second seed crystal drag 122. The crucible lid 13 has a second connector 131, which is an external thread. When connecting the seed crystal drag 12 to the crucible lid 13, the crucible lid 13 is inserted into the second seed crystal drag 122, where the internal threads on the crucible lid 13 are threadedly connected to the internal threads of the second seed crystal drag 122. This facilitates disassembly of the crucible lid 13 and seed crystal drag 12, facilitating analysis after crystal growth.

[0057] The first seed crystal drag 121 is also connected to the second seed crystal drag 122. The edge of the crucible cover 13 near the external thread is also provided with an annular first groove body 132 adapted to the first seed crystal drag 121. When the crucible cover 13 extends into the second seed crystal drag 122 and is connected to the second seed crystal drag 122, part of the first seed crystal drag 121 can extend into the first groove body 132 of the crucible cover 13 and be interlocked with the crucible cover 13. The seed crystal 2 is adhered to the side of the crucible cover 13 facing the second seed crystal drag 122. The seed crystal 2 is blocked on the top of the first seed crystal drag 121, thereby achieving a seal between the crucible cover 13 and the seed crystal drag 12, so that the sublimated raw material transmitted from the first flow channel can be evenly transmitted to the seed crystal 2, thereby achieving high-quality growth of silicon carbide single crystals.

[0058] like Figure 3 and Figure 4 As shown, in the embodiment of the present application, a third connecting member 1225 is provided on the outer wall of the first end of the second seed crystal drag 122, and the third connecting member 1225 is arranged corresponding to the area where the inclined surface 1221 is located; the side of the crucible body 11 close to the seed crystal drag 12 has a fourth connecting member 112 adapted to the third connecting member 1225, and the third connecting member 1225 cooperates with the fourth connecting member 112 to connect the second seed crystal drag 122 to the crucible body 11.

[0059] In this embodiment, the third connecting member 1225 is an external thread provided on the outer wall of the second seed crystal drag 122 at the end near the crucible body 11, and the fourth connecting member 112 is an internal thread provided on the end of the crucible body 11 near the second seed crystal drag 122. When connecting the seed crystal drag 12 to the crucible body 11, the crucible body 11 is inserted into the second seed crystal drag 122. The internal threads of the crucible body 11 and the external threads of the second seed crystal drag 122 are threadedly connected, allowing the crucible body 11 and seed crystal drag 12 to be detachably connected, facilitating the addition of raw materials into the crucible body 11. The external threads of the second seed crystal drag 122 correspond to the area of ​​the inclined sidewall of the second seed crystal drag 122, thereby facilitating the flow channel formed by the multiple graphite rods 111 in the crucible body 11 and the flow channel formed by the inclined surface 1221 in the seed crystal drag 12, thereby increasing the speed of raw material transportation.

[0060] So far, the various embodiments of the present application have been described in detail. To avoid obscuring the concept of the present application, some details well known in the art have not been described. Based on the above description, those skilled in the art can fully understand how to implement the technical solutions disclosed herein.

[0061] Although some specific embodiments of the present application have been described in detail through examples, those skilled in the art will understand that the above examples are for illustrative purposes only and are not intended to limit the scope of the present application. Those skilled in the art will understand that the above embodiments may be modified or some technical features may be replaced by equivalents without departing from the scope and spirit of the present application. In particular, as long as there are no structural conflicts, the various technical features mentioned in the various embodiments may be combined in any manner.

Claims

1. A crucible structure, characterized in that: include: A crucible body (11), wherein the crucible body (11) is used for placing raw materials; a seed crystal drag (12), the seed crystal drag (12) being arranged at a first end of the crucible body (11) and connected to the crucible body (11), the seed crystal drag (12) having a first circulation channel at least partially having an inclined surface (1221), the first circulation channel being in communication with the crucible body (11) for transporting sublimated raw materials; A crucible cover (13) is provided on the second end of the seed crystal drag (12) and is connected to the seed crystal drag (12); a seed crystal is provided at one end of the crucible cover (13) facing the seed crystal drag (12); an inclined surface (1221) of the first circulation channel is inclined toward the seed crystal; sublimated raw materials are transferred to the seed crystal through the first circulation channel to form a silicon carbide single crystal.

2. The crucible structure according to claim 1, characterized in that The seed crystal drag (12) comprises a first seed crystal drag (121) and a second seed crystal drag (122), wherein the first seed crystal drag (121) is arranged in the second seed crystal drag (122), and the first seed crystal drag (121) is attached to the inner wall of the second seed crystal drag (122), and the first seed crystal drag (121) is closer to the crucible cover (13) relative to the second seed crystal drag (122); the first seed crystal drag (121) is a hollow cylindrical structure, and the diameter of the end of the first seed crystal drag (121) close to the crucible cover (13) is equal to the diameter of the seed crystal, and the seed crystal is sealed at the end of the first seed crystal drag (121) close to the crucible cover (13); the second seed crystal drag (122) and the first seed crystal together form the first circulation channel, and the inclined surface (1221) in the first circulation channel is arranged close to the crucible body (11).

3. The crucible structure according to claim 2, characterized in that The inner wall of the second seed crystal drag (122) has an annular boss (1222) between the first side and the second side; the first seed crystal drag (121) is arranged on the annular boss (1222) and is connected to the second seed crystal drag (122) through the annular boss (1222); the inclined surface (1221) extends from the edge of the second seed crystal drag (122) close to the end of the crucible body (11) to the edge of the inner circle of the annular boss (1222).

4. The crucible structure according to claim 1, characterized in that A plurality of graphite rods (111) extending in the axial direction are evenly arranged in the crucible body (11), and the ends of the graphite rods (111) close to the seed crystal drag (12) are flush with the top of the crucible body (11) close to the seed crystal drag (12).

5. The crucible structure according to claim 4, characterized in that: Also includes: A pressure ring (14) and a pressure plate (15), wherein the pressure ring (14) and the pressure plate (15) are both pressed onto one end of the plurality of graphite rods (111) close to the seed crystal drag (12), the pressure plate (15) is a circular structure pressed onto the central area of ​​the plurality of graphite rods (111), the pressure ring (14) surrounds the pressure plate (15), and an annular space is formed between the pressure ring (14) and the pressure plate (15), and the annular space is communicated with the first circulation channel.

6. The crucible structure according to claim 1, characterized in that The wall thickness of the crucible body (11) at one end close to the seed crystal drag (12) is greater than the wall thickness at one end away from the seed crystal drag (12).

7. The crucible structure according to claim 3, characterized in that: The thickness of the first seed crystal drag (121) is equal to the ring width of the annular boss (1222), and the height of the first seed crystal drag (121) along the axial direction is less than the height from the annular boss (1222) to one end of the second seed crystal drag (122) close to the crucible cover (13).

8. The crucible structure according to claim 2, characterized in that: A first connecting piece (1224) is provided on the inner wall of the second end of the second seed crystal drag (122); an end of the crucible cover (13) close to the seed crystal drag (12) has a second connecting piece adapted to the first connecting piece (1224); the second seed crystal drag (122) and the crucible cover (13) are connected via the first connecting piece (1224) and the second connecting piece (131).

9. The crucible structure according to claim 8, characterized in that: An annular first groove body (132) adapted to the first seed crystal drag (121) is provided at an edge area of ​​the crucible cover (13) close to one end of the seed crystal drag (12); a portion of the first seed crystal drag (121) extends into the first groove body (132) and is connected to the crucible cover (13).

10. The crucible structure according to claim 2, characterized in that: A third connecting piece (1225) is provided on the outer wall of the first end of the second seed crystal drag (122), and the third connecting piece (1225) is arranged corresponding to the area where the inclined surface (1221) is located; a fourth connecting piece (112) adapted to the third connecting piece (1225) is provided on the side of the crucible body (11) close to the seed crystal drag (12), and the third connecting piece (1225) cooperates with the fourth connecting piece (112) to connect the second seed crystal drag (122) to the crucible body (11).

Images