IGBT integrated with temperature detection module

Abstract

The utility model discloses an IGBT (Insulated Gate Bipolar Translator) integrated with a temperature detection module, which comprises an IGBT chip, a chip anode, a chip cathode and a temperature detection module are arranged on the front area of the IGBT chip, and the temperature detection module is connected with the chip anode and the chip cathode; the temperature detection module comprises at least four temperature diodes which are connected in series, and voltage drop signals of the at least four temperature diodes which are connected in series are used for monitoring the temperature of the IGBT chip. According to the IGBT integrated with the temperature detection module provided by the utility model, the temperature detection module is integrated on the IGBT, so that the temperature detection function of the IGBT can be realized on the basis of not changing the performance of the original IGBT chip, and the temperature variation is monitored by detecting the variation of the voltage drop signals of the at least four temperature diodes connected in series along with the temperature; therefore, a temperature detection function is realized.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor power devices, in particular to an IGBT with an integrated temperature detection module. Background Art

[0002] At present, as the core component of the power electronics industry, IGBT has experienced explosive growth in demand with the rapid development of new energy vehicles and new energy power generation in recent years.

[0003] Conventional insulated-gate bipolar transistor (IGBT) chips in IGBT modules typically use an NTC temperature diode to detect module temperature. Since the NTC diode isn't integrated into the IGBT chip, it's typically placed in a corner near the module's DBC. The resistance across the NTC diode changes with temperature, effectively shutting down the IGBT in the event of overtemperature. However, since the NTC detection device is directly connected to the DBC of the soldered chip, the temperature it detects reflects the module's DBC temperature, which is also affected by the module's internal packaging environment. Consequently, the temperature detected by the NTC temperature detection device may differ from the actual temperature of the IGBT chip.

[0004] In view of this, it is necessary to propose further improvements to the current structure. Utility Model Content

[0005] Therefore, the present invention aims to solve the deficiencies in the prior art to at least a certain extent, thereby providing an IGBT with an integrated temperature detection module.

[0006] In order to achieve the above purpose, a technical solution adopted by the present utility model is:

[0007] The utility model provides an IGBT with an integrated temperature detection module, comprising:

[0008] An IGBT chip, wherein a chip anode, a chip cathode, and a temperature detection module are provided on the front area of ​​the IGBT chip, and the temperature detection module is connected to the chip anode and the chip cathode;

[0009] The temperature detection module includes at least four temperature diodes connected in series, and voltage drop signals of the at least four temperature diodes connected in series are used to monitor the temperature of the IGBT chip.

[0010] Furthermore, the temperature detection module is arranged at the center of the front area of ​​the IGBT chip.

[0011] Furthermore, any of the temperature diodes includes a detection diode anode and a detection diode cathode respectively arranged on the front area of ​​the IGBT chip, the detection diode anode is provided with a hollow portion, and the detection diode cathode is arranged in the hollow portion.

[0012] Furthermore, any two of the temperature diodes connected in series are connected via a detection electrode lead, and a plurality of the detection electrode leads are respectively connected to the detection diode anodes and the detection diode cathodes on the plurality of the temperature diodes.

[0013] Furthermore, the multiple detection electrode leads also include a first detection electrode lead and a second detection electrode lead for connecting the IGBT chip, and the first detection electrode lead and the second detection electrode lead are respectively connected to the chip anode and the chip cathode in the front area of ​​the IGBT chip to detect the voltage drop signals of the multiple temperature diodes.

[0014] Furthermore, the surfaces of the plurality of temperature diodes are covered with a metal layer.

[0015] Furthermore, any of the temperature diodes further includes a first P-region, an N-region, and a second P-region, and the N-region is disposed between the first P-region and the second P-region.

[0016] Furthermore, the temperature detection module includes four temperature diodes connected in series, and the four temperature diodes have the same structure.

[0017] Furthermore, a temperature diode electrode channel is provided on the front area of ​​the IGBT chip, the temperature detection module is provided on the temperature diode electrode channel, and the chip anode and the chip cathode are respectively provided on both sides of the temperature diode electrode channel.

[0018] Furthermore, a gate, a source region and a terminal region are provided on the front area of ​​the IGBT chip, and the terminal region is provided on four edges of the IGBT chip.

[0019] The utility model provides an IGBT with an integrated temperature detection module, comprising: an IGBT chip, wherein a chip anode, a chip cathode, and a temperature detection module are provided on the front area of ​​the IGBT chip, the temperature detection module being connected to the chip anode and the chip cathode; the temperature detection module comprising at least four temperature diodes connected in series, wherein voltage drop signals of the at least four temperature diodes connected in series are used to monitor the temperature of the IGBT chip. The IGBT with an integrated temperature detection module provided by the utility model integrates the temperature detection module on the IGBT, thereby achieving the temperature detection function of the IGBT without changing the performance of the original IGBT chip. The temperature change is monitored by detecting the change in the voltage drop signals of the at least four temperature diodes connected in series as the temperature changes, thereby achieving the temperature detection function. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0021] Figure 1 This is a schematic diagram of the overall structure of the IGBT of the integrated temperature detection module of the present invention;

[0022] Figure 2 This is a schematic structural diagram of the temperature detection module in the IGBT of the integrated temperature detection module of the present invention;

[0023] Figure 3 This is a schematic cross-sectional structure diagram of the temperature diode in the IGBT of the integrated temperature detection module of the present invention.

[0024] The reference numerals in the figure are as follows: 1. IGBT chip; 11. Chip anode; 12. Chip cathode; 13. Temperature detection module; 131. Temperature diode; 1311. Detection diode anode; 1312. Detection diode cathode; 1313. Metal layer; 132. First detection electrode lead; 133. Second detection electrode lead; 14. Temperature diode electrode channel; 15. Gate; 16. Source region; 17. Terminal region. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0026] It should be noted that the descriptions of "first" and "second" in this utility model are for descriptive purposes only and should not be understood as indicating or implying their relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features specified as "first" and "second" may explicitly or implicitly include at least one of such features. In addition, the technical solutions between the various embodiments can be combined with each other, but this must be based on the fact that they can be implemented by ordinary technicians in this field. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by this utility model.

[0027] Please refer to Figures 1 to 3 The utility model provides an IGBT with an integrated temperature detection module, comprising:

[0028] An IGBT chip 1 is provided with a chip anode 11, a chip cathode 12 and a temperature detection module 13 on the front area of ​​the IGBT chip 1. The temperature detection module 13 is connected to the chip anode 11 and the chip cathode 12.

[0029] The temperature detection module 13 includes at least four temperature diodes 131 connected in series. Voltage drop signals of the at least four temperature diodes 131 connected in series are used to monitor the temperature of the IGBT chip 1 .

[0030] In this embodiment, the IGBT chip 1 includes a front area and a back area, and a chip anode 11, a chip cathode 12 and a temperature detection module 13 are provided on the front area of ​​the IGBT chip 1. The temperature detection module 13 is connected to the chip anode 11 and the chip cathode 12 of the IGBT chip 1, wherein the temperature detection module 13 includes at least four temperature diodes 131 connected in series, so that at least four temperature diodes 131 can be connected to the IGBT chip 1 through the chip anode 11 and the chip cathode 12, so that at least four temperature diodes 131 in the temperature detection module 13 are connected to the IGBT chip 1, and then the voltage drop signals of the multiple temperature diodes 131 are detected by the driving circuit connected to the IGBT chip 1 to monitor the temperature of the IGBT chip 1. The temperature detection function of the IGBT chip 1 can be realized by integrating multiple temperature diodes 131 on the IGBT chip 1 without changing the performance of the original IGBT chip 1.

[0031] Specifically, since the voltage drop signal of the temperature diode 131 is inversely proportional to the temperature, the change in the voltage drop signal of the temperature diode 131 with the temperature is detected to monitor the change in the IGBT chip 1 and realize the temperature detection function. That is, after the temperature of the IGBT chip 1 rises, the voltage drop signal of the temperature diode 131 will decrease linearly. The driving circuit connected to the IGBT chip 1 receives the voltage drop signals of multiple temperature diodes 131 connected in series. When the voltage drop signal drops to the set protection point, the driving circuit will start to cut off the signal of the gate 15 of the IGBT chip 1, thereby protecting the IGBT chip 1 from overheating and damage.

[0032] Furthermore, a temperature diode 131 electrode channel is provided on the front area of ​​the IGBT chip 1 , the temperature detection module 13 is provided on the temperature diode electrode channel 14 , and the chip anode 11 and the chip cathode 12 are respectively provided on both sides of the temperature diode electrode channel 14 .

[0033] Furthermore, a gate 15 , a source region 16 and a terminal region 17 are further provided on the front area of ​​the IGBT chip 1 . The terminal region 17 is provided at four edges of the IGBT chip 1 .

[0034] Furthermore, the temperature detection module 13 is disposed at the center of the front area of ​​the IGBT chip 1 .

[0035] In this embodiment, since the conventional temperature detection module is arranged at the edge of the IGBT chip 1, there is a large difference in the temperature of the IGBT chip 1 detected by the temperature detection module. Therefore, in this embodiment, the temperature detection module 13 is arranged in the middle of the front area of ​​the IGBT chip 1, so that the temperature of the IGBT chip 1 can be accurately detected.

[0036] Furthermore, each temperature diode 131 includes a detection diode anode 1311 and a detection diode cathode 1312 arranged on the front area of ​​the IGBT chip 1. The detection diode anode 1311 is provided with a hollow portion, and the detection diode cathode 1312 is arranged in the hollow portion.

[0037] In this embodiment, each temperature diode 131 includes a detection diode anode 1311 and a detection diode cathode 1312, and the detection diode anode 1311 and the detection diode cathode 1312 are both arranged on the front area of ​​the IGBT chip 1. Specifically, a hollow portion is provided in the middle of the detection diode anode 1311, and the detection diode cathode 1312 is provided in the hollow portion of the detection diode anode 1311.

[0038] Furthermore, in this embodiment, the temperature detection module 13 specifically includes four temperature diodes 131 connected in series, and the structures of the four temperature diodes 131 are completely the same.

[0039] Furthermore, any temperature diode 131 further includes a first P-region, an N-region, and a second P-region, and the N-region is disposed between the first P-region and the second P-region.

[0040] Furthermore, two temperature diodes 131 are connected via detection electrode leads, and a plurality of detection electrode leads are connected to the detection diode anodes 1311 and the detection diode cathodes 1312 on the plurality of temperature diodes 131 .

[0041] In this embodiment, any two temperature diodes 131 connected in series are connected through a detection electrode lead. Specifically, multiple detection electrode leads are respectively connected to the detection diode anodes 1311 and the detection diode cathodes 1312 of multiple temperature diodes 131, that is, the detection diode anode 1311 and the detection diode cathode 1312 of each temperature diode 131 are connected to a detection electrode lead. For example, if two temperature diodes 131 are connected in series through the detection electrode lead, one end of the detection electrode lead is connected to the detection diode anode 1311 of one of the temperature diodes 131, and the other end is connected to the detection diode cathode 1312 of the other temperature diode 131, so that the two temperature diodes 131 are connected in series through the detection electrode lead.

[0042] Furthermore, the multiple detection electrode leads also include a first detection electrode lead 132 and a second detection electrode lead 133 for connecting the IGBT chip 1. The first detection electrode lead 132 and the second detection electrode lead 133 are respectively connected to the chip anode 11 and the chip cathode 12 in the front area of ​​the IGBT chip 1 to detect the voltage drop signals of the multiple temperature diodes 131.

[0043] In this embodiment, the multiple detection electrode leads on the multiple temperature diodes 131 also include a first detection electrode lead 132 and a second detection electrode lead 133 connected to the IGBT chip 1. Specifically, the first detection electrode lead 132 and the second detection electrode lead 133 are respectively connected to the detection diode cathode 1312 and the detection diode anode 1311 on the two temperature diodes 131. The first detection electrode lead 132 and the second detection electrode lead 133 on the multiple temperature diodes 131 are connected to the chip anode 11 and the chip cathode 12 on the front area of ​​the IGBT chip 1, thereby detecting the voltage drop signals of the multiple temperature diodes 131, and further detecting the temperature of the IGBT chip 1.

[0044] Furthermore, the surfaces of the plurality of temperature diodes 131 are covered with a metal layer 1313 .

[0045] In this embodiment, the surfaces of the plurality of temperature diodes 131 are covered with a metal layer 1313 , and the metal layer 1313 can connect the plurality of temperature diodes 131 connected in series.

[0046] Furthermore, a method for manufacturing an IGBT with an integrated temperature detection module in an embodiment of the present application is as follows:

[0047] 1. Set an area at the center of the IGBT chip 1, perform polysilicon deposition, and then perform boron implantation. Use photolithography to obtain four polysilicon areas of equal size to form the detection diode anode 1311.

[0048] 2. Forming a detection diode cathode 1312 on the polycrystalline by phosphorus ion implantation and diffusion;

[0049] 3. Deposit borophosphosilicate glass on the polycrystalline, etch the borophosphosilicate glass after photolithography of lead holes, open holes for detection electrode leads, and achieve electrode isolation of temperature diode 131;

[0050] 4. Deposit a metal layer 1313 on the surface and connect four temperature diodes 131 in series to form the structure of the temperature detection module 13.

[0051] The utility model provides an IGBT with an integrated temperature detection module, comprising: an IGBT chip, wherein a chip anode, a chip cathode, and a temperature detection module are provided on the front area of ​​the IGBT chip, the temperature detection module being connected to the chip anode and the chip cathode; the temperature detection module comprising at least four temperature diodes connected in series, wherein voltage drop signals of the at least four temperature diodes connected in series are used to monitor the temperature of the IGBT chip. The IGBT with an integrated temperature detection module provided by the utility model integrates the temperature detection module on the IGBT, thereby achieving the temperature detection function of the IGBT without changing the performance of the original IGBT chip. The temperature change is monitored by detecting the change in the voltage drop signals of the at least four temperature diodes connected in series as the temperature changes, thereby achieving the temperature detection function.

[0052] It should be noted that the various embodiments in the present invention are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same and similar parts between the various embodiments can be referred to each other.

[0053] It should also be noted that, in the present invention, relational terms such as first and second, etc. are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further restrictions, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0054] The above description of the disclosed embodiments is intended to enable one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention is not limited to the embodiments shown herein, but is intended to be applied in the widest possible manner consistent with the principles and novel features disclosed herein.

Claims

1. An IGBT with an integrated temperature detection module, characterized in that: include: An IGBT chip, wherein a chip anode, a chip cathode, and a temperature detection module are provided on the front area of ​​the IGBT chip, and the temperature detection module is connected to the chip anode and the chip cathode; The temperature detection module includes at least four temperature diodes connected in series, and voltage drop signals of the at least four temperature diodes connected in series are used to monitor the temperature of the IGBT chip.

2. The IGBT integrated temperature detection module according to claim 1, characterized in that: The temperature detection module is arranged at the center of the front area of ​​the IGBT chip.

3. The IGBT with integrated temperature detection module according to claim 1, characterized in that: Any of the temperature diodes includes a detection diode anode and a detection diode cathode arranged on the front area of ​​the IGBT chip, the detection diode anode is provided with a hollow portion, and the detection diode cathode is arranged in the hollow portion.

4. The IGBT with integrated temperature detection module according to claim 3, characterized in that: Any two temperature diodes connected in series are connected via a detection electrode lead, and a plurality of detection electrode leads are respectively connected to the detection diode anodes and the detection diode cathodes on the plurality of temperature diodes.

5. The IGBT with integrated temperature detection module according to claim 4, characterized in that: The multiple detection electrode leads also include a first detection electrode lead and a second detection electrode lead for connecting the IGBT chip, and the first detection electrode lead and the second detection electrode lead are respectively connected to the chip anode and the chip cathode in the front area of ​​the IGBT chip to detect the voltage drop signals of the multiple temperature diodes.

6. The IGBT with integrated temperature detection module according to claim 1, characterized in that: Surfaces of the plurality of temperature diodes are covered with a metal layer.

7. The IGBT with integrated temperature detection module according to claim 1, characterized in that: Any of the temperature diodes further includes a first P-region, an N-region, and a second P-region, wherein the N-region is disposed between the first P-region and the second P-region.

8. The IGBT with integrated temperature detection module according to claim 1, characterized in that: The temperature detection module includes four temperature diodes connected in series, and the four temperature diodes have the same structure.

9. The IGBT with integrated temperature detection module according to claim 1, characterized in that: A temperature diode electrode channel is provided on the front area of ​​the IGBT chip, the temperature detection module is provided on the temperature diode electrode channel, and the chip anode and the chip cathode are respectively provided on both sides of the temperature diode electrode channel.

10. The IGBT with integrated temperature detection module according to claim 1, characterized in that: A gate, a source region and a terminal region are also provided on the front area of ​​the IGBT chip, and the terminal region is provided on the four edges of the IGBT chip.

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