Electro-optical device

Abstract

An electro-optical device includes a first substrate and a second substrate. The first electrode is coupled to the first substrate and the second electrode is coupled to the second substrate. An electro-optic medium is disposed between the first electrode and the second electrode and is configured to be electrically activated between states. A plurality of transistors are in electrical communication with the electro-optic medium to switch a local region of the electro-optic medium between states.

Description

Technical Field

[0001] The present disclosure relates generally to electro-optical devices, and more particularly, to electro-optical devices having individually controlled electro-optical segments. Background Art

[0002] There are known electro-optical devices in the prior art. However, it has been an object of the art to develop improved electro-optical devices. Utility Model Content

[0003] According to one aspect of the present disclosure, an electro-optical device includes a first substrate and a second substrate. A first electrode is coupled to the first substrate, and a second electrode is coupled to the second substrate. An electro-optical medium is disposed between the first electrode and the second electrode and is configured to be electrically activated between states. A plurality of transistors are electrically connected to the electro-optical medium to switch a localized region of the electro-optical medium between the states.

[0004] According to another aspect of the present disclosure, an electro-optical device includes a first substrate and a second substrate. A first electrode is coupled to the first substrate, and a plurality of intermediate electrodes are coupled to the second substrate. An electro-optical medium is disposed between the first electrode and the plurality of intermediate electrodes and is configured to be electrically activated between states. A plurality of transistor arrays are electrically connected to the electro-optical medium via the plurality of intermediate electrodes to switch localized regions of the electro-optical medium between states.

[0005] According to another aspect of the present disclosure, an electro-optical device includes a first substrate and a second substrate. An electro-optical medium is disposed between the first and second substrates and is configured to be electrically activated between states. A plurality of transistors are electrically connected to the electro-optical medium to switch localized regions of the electro-optical medium between the states. The plurality of transistors are arranged in a hexagonal grid.

[0006] Those skilled in the art will further understand and appreciate these and other features, advantages and objects of the present device through a study of the following specification, claims and drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The present invention will now be described with reference to the following drawings, in which:

[0008] Figure 1A is a perspective view of a car including the electro-optical device of the present disclosure;

[0009] Figure 1B is a perspective view of an aircraft including an electro-optical device of the present disclosure;

[0010] Figure 1C is a perspective view of a building including the electro-optical device of the present disclosure;

[0011] Figure 1Dis a front view of a virtual or semi-virtual device including an electro-optical device of the present disclosure;

[0012] Figure 2 is an exploded view of an electro-optical device according to a first configuration of an aspect of the present disclosure;

[0013] Figure 3 yes Figure 2 A cross-sectional view of an electro-optical device;

[0014] Figure 4 Is electrically connected to the control circuit system Figure 2 Schematic diagram of an electro-optical device;

[0015] Figure 5 yes Figure 2 a partial perspective cross-sectional view of a switching layer of an electro-optical device;

[0016] Figure 6 is a cross-sectional view of an electro-optical device of a second configuration including two switching layers;

[0017] Figure 7 Is electrically connected to the control circuit system Figure 6 Schematic diagram of an electro-optical device;

[0018] Figure 8A is an exploded view of an electro-optical device showing a plurality of element electrodes according to one aspect of the present disclosure;

[0019] Figure 8B is a top view of a plurality of electro-optical segments receiving power from element electrodes;

[0020] Figure 8C is a schematic diagram showing the size and spatial relationship between the element electrodes and the electro-optical segments;

[0021] Figure 8D is a top view of a transistor array according to one aspect of the present disclosure;

[0022] Figure 8E is a top view of a transistor array according to another aspect of the present disclosure;

[0023] Figure 8F is a top view of a transistor array according to yet another aspect of the present disclosure;

[0024] Figure 9A and Figure 9B is a top view of an electro-optical device including an array of electro-optical segments;

[0025] Figure 9C and Figure 9D is a top view of an electro-optical device including an array of electro-optical segments according to another aspect of the present disclosure;

[0026] Figure 10 yes Figures 8A to 8F A partial cross-sectional view of an electro-optical device;

[0027] Figure 11 yes Figures 8A to 8C a partial perspective cross-sectional view of a switching layer of an electro-optical device;

[0028] Figure 12 is a schematic diagram of an electro-optical device in electrical communication with a control circuit system;

[0029] Figure 13 Is electrically connected to the control circuit system Figure 10 Schematic diagram of an electro-optical device;

[0030] Figure 14 is a schematic diagram of an electro-optical device in electrical communication with analog components of a control circuit system; and

[0031] Figure 15 is a schematic diagram of a power supply circuit system of an electro-optical device according to one aspect of the present disclosure. DETAILED DESCRIPTION

[0032] For the purposes of this description, the terms "upper," "lower," "right," "left," "rear," "front," "vertical," "horizontal," and their derivatives will relate to the orientation of the present invention in FIG1 . However, it should be understood that the present invention may adopt various alternative orientations, except where the opposite orientation is explicitly specified. It should also be understood that the specific devices and processes shown in the accompanying drawings and described in the following specification are merely exemplary embodiments of the inventive concepts defined in the appended claims. Therefore, unless the claims expressly state otherwise, specific dimensions and other physical characteristics related to the embodiments disclosed herein should not be considered limiting.

[0033] The terms "comprises," "includes," or any other variations thereof are intended to cover a non-exclusive inclusion such that a process, method, article, or apparatus that comprises a list of elements may include not only those elements but also other elements not expressly listed or inherent to such process, method, article, or apparatus. An element preceded by "comprises..." does not, without more constraints, preclude the presence of additional identical elements in the process, method, article, or apparatus that comprises the element.

[0034] As defined herein, when used with respect to electrical properties, optical properties (e.g., light transmittance), etc., "substantially" may, in some embodiments, mean within ten percent of a target state (e.g., 100%). In other embodiments, "substantially" may mean within five percent of the ideal state. In yet other embodiments, "substantially" may mean within three percent of the ideal state. In yet other embodiments, "substantially" may mean within one percent of the ideal state. For example, "opaque" may have an ideal state of approximately 0% light transmittance, while "transparent" may have an ideal state of approximately 100% light transmittance.

[0035] The order in which the surfaces of the sequentially positioned structural elements of the assembly (e.g., a substrate made of glass or other translucent material) are viewed is the order in which these surfaces are referred to as the first surface, the second surface, the third surface, and the other surfaces (if any) in ascending order. Therefore, in general, the surfaces of the structural elements (e.g., the substrate) of the embodiments of the present invention are labeled with numbers, starting with the surface corresponding to the top or front portion of the window assembly and closer to the observer or user of the assembly, and ending with the surface corresponding to the bottom or back portion of the assembly and away from the user. Therefore, the term "back" refers to a position in space that is behind something else, and indicates that one element or thing is behind another element or thing when viewed from the front of the window assembly. Similarly, the term "in front of" refers to a front place or position, relative to a specific element viewed from the front of the assembly.

[0036] According to some aspects of the present disclosure, an electro-optical device with improved responsiveness is disclosed. For example, the electro-optical device may include an electro-optical element having multiple transistors that can be controlled individually. Individualized control can prevent and / or limit the electro-optical device from producing a rise effect (i.e., darkening the perimeter of the electro-optical device before darkening the center of the electro-optical device). In addition, each transistor can provide an improved packaging to increase the pattern arrangement of responsiveness. In addition, each transistor can darken the electro-optical material in a radially symmetric (e.g., circular) local area. The electro-optical device of the present disclosure provides a cost-effective construction by reducing the depth of the conductive material applied to the substrate of the electro-optical element. In addition, the electro-optical device can provide a reduced busbar footprint on the electrodes of the electro-optical element. These reductions may generally be due to fine control of the electrical quality (e.g., voltage, current) applied to the electro-optical device and more specifically applied to the electro-optical segments within the electro-optical device.

[0037] Due to the individualized control, the electro-optical device can also provide a single-sided power connection to the electro-optical elements. More specifically, because the individual electro-optical segments ( Figures 8A-11) provides power, so a high voltage (e.g., 6-10V) can be provided to the electro-optical device without damaging the components of the electro-optical device. The high voltage can be any voltage that is operable to power one segment of the electro-optical device (e.g., 0.7V to 1.2V) and / or can be any voltage that is operable to power multiple electro-optical segments (e.g., greater than about 1V). The high voltage may not be limited to a specific voltage range. The voltage ranges described herein are intended to be exemplary and non-limiting. For example, the high voltage can be a minimum threshold voltage for powering the electro-optical segment to limit the power consumption of the electro-optical device. In some arrangements, the power supply voltage is dynamic and / or adjustable via manual or programmatic control. Optionally, a ground or negative power rail can be provided to improve the sharpening performance, or to allow the driving voltage to be reduced in local areas. The high voltage can be gradually reduced for each electro-optical segment. The high voltage can also alleviate the problem of voltage drop due to the inherent resistance of the conductive materials that may be used in the electro-optical device. Furthermore, the electro-optical devices of the present disclosure may provide faster and more uniform dimming and clearing of electro-optical cell(s) by providing an array of individually controlled transistors tightly packed into an array.

[0038] refer to Figure 1A-1D , various embodiments of the electro-optical device 10 include one or more structures 12. For example, Figure 1A An automobile 12a is shown employing one or more electro-optical devices 10 in the form of an interior rearview mirror 13 , a window 14 , and / or an exterior rearview mirror 16 . Figure 1B Aircraft 12b is shown with one or more electro-optical devices 10 in the form of windows 14 . Figure 1C A building 12c is shown with one or more electro-optical devices 10 in the form of windows 14. Window 14 can be configured to provide a physical barrier between two areas and can be operable to allow variable light transmission between the two areas. Window 14 can take many configurations, such as a building window, a vehicle windshield, a side vehicle window, a rear vehicle window, a sunroof, a head-up display, etc. An exterior rearview mirror 16 can be coupled to the exterior of automobile 12a and configured to provide an observer with a field of view that captures the exterior or sides of automobile 12a. An interior rearview mirror 13 can be a device within the interior of the automobile that is configured to provide an observer with a field of view that includes the exterior of automobile 12a. The interior rearview mirror 13 and the exterior rearview mirror 16 can be variably transmissive to minimize glare. Figure 1D A virtual or semi-virtual device 12d is shown that may include the electro-optical device 10. The virtual or semi-virtual device 12d may be glasses, goggles, other display devices, etc. The virtual or semi-virtual device 12d may be configured as augmented reality (AR), extended reality (XR), virtual reality (VR), or mixed reality (MR).

[0039] Continue to refer Figure 1A-1D, the electro-optical device 10 can provide segmented dimming to local areas according to the area with active display content and provide maximum contrast for the content. The transistors, electro-optical segments, and element electrode packaging as will be further described maximize the aperture ratio and thus achieve high transmittance in a clear state. In this way, segmented control can be used to prevent glare, display content, etc. In other words, the electro-optical device 10 can be configured to switch between a partially transmissive state and a partially reflective state (e.g., a mirror) or between a partially reflective state and a partially opaque state (e.g., a window).

[0040] refer to Figure 2-Figure 4 , an electro-optical device 10 of a first configuration including an electrical switch and a control component is provided. With respect to the physical configuration of the electro-optical device 10, a first electrode 22 and a power supply circuit system 24 ( Figure 4 ) is electrically connected. The second electrode 26 may be spaced apart from the first electrode 22 and electrically connected to the power circuit system 24. The electro-optical medium 28 may be disposed between the first electrode 22 and the second electrode 26. At least one third electrode 30 (eg, an intermediate electrode 30) may be disposed between the first electrode 22 and the second electrode 26. Figure 2 As shown, the middle electrode 30 may be electrically coupled to one of the first electrode 22 and / or the second electrode 26 via a switching circuit system 32. The switching circuit system 32 may be operable to control the current through the first electrode 22, the electro-optic medium 28, and the second electrode 26. The middle electrode 30 may be disposed toward a first portion 33a (e.g., a top portion) of the electro-optical device 10. The electro-optical device 10 may lack the middle electrode 30 disposed toward a second portion 33b (e.g., a bottom portion) of the electro-optical device 10. In this configuration, the first portion 33a may be referred to as an "active plate" due to the separate control and / or monitoring of the electrical parameters of the first portion 33a, and the second portion 33b may be referred to as a "passive plate" due to the lack of separate control and / or monitoring of the electrical parameters of the second portion 33b. However, it should be understood that in some embodiments, the first portion 33a may be configured as a passive plate, and the second portion 33b may be configured as an active plate.

[0041] The electro-optic device 10 may extend along a length L of the electro-optic device 10 between a first end 34 and a second end 36, the second end being opposite the first end 34. The electro-optic device 10 may also have a thickness T extending between a first substrate 38 and a second substrate 40 of the electro-optic device 10. One or more electro-optic elements 42 may be disposed between the first substrate 38 and the second substrate 40 of the electro-optic device 10. The electro-optic elements 42 may generally be formed from the second electrode 26, the electro-optic medium 28, and the intermediate electrode 30. The term "electro-optic element" may be used herein primarily to refer to an electrical representation of the physical structure shown, and is not intended to be limited to any particular portion of the electrodes 22, 26, 30, or the electro-optic medium 28. It is also contemplated that one or more of the electro-optic elements 42 may comprise or be otherwise referred to as an electrochromic cell.

[0042] Each of the first substrate 38 and the second substrate 40 may extend between an outer surface 44 and an inner surface 46. The electro-optical element 42 may be sandwiched between the inner surface 46 of the first substrate 38 and the second substrate 40. Electrical connectors 48 (e.g., bus bars) may be provided at one or both ends 34, 36 of the electro-optical device 10 to provide an electrical power connection to the electro-optical device 10. The electrical connectors 48 may also or alternatively be positioned on the first electrode 22 and the second electrode 26 adjacent to an edge 49 of the electro-optical device 10.

[0043] More specifically refer to Figure 3 The middle electrode 30 and the second electrode 26 define a cavity 50 extending therebetween for receiving the electro-optic medium 28. The electro-optic medium 28 may be an electro-optic fluid, gel, or solid layer of a conductive, substantially transparent material. According to at least one example, the electro-optic medium 28 is an electrochromic medium comprising at least one solvent, at least one anode material, and at least one cathode material. Typically, both the anode material and the cathode material are electrically active, and at least one is electrochromic. The electrochromic material switches between a transmissive state that allows transmission of various wavelengths of light and an operable state that reflects or absorbs various wavelengths of light. The first and second electrodes 22, 26 may be surface mounted to the inner surfaces 46 of the first and second substrates 38, 40 and may be solid, gel-like, or the like. The middle electrode 30 may have the same or similar composition as either or both of the first and second electrodes 22, 26. In some embodiments, the middle electrode 30 may have a thickness less than that of the first and second electrodes 22, 26. The electrodes 22, 26, 30 may be composed of indium tin oxide (ITO) and / or other semi-transparent conductive materials. Electro-optic medium 28 may include an electrochromic substance whose color may change when an electrical potential and / or current is applied to electro-optic medium 28. By employing selectively transparent materials in various components of electro-optic device 10, electro-optic device 10 may selectively darken (e.g., control the transmittance of light via absorption or reflection) based on electrical parameters applied to electrodes 22, 26, 30.

[0044] Continue to refer Figure 3 , the cavities 50 can be sealed via one or more barriers 52, 54 disposed between the third electrode 30 and the second electrode 26. The barriers can include an intermediate barrier 52 inserted into the plurality of cavities 50, and end barriers 54. The end barriers 54 can be disposed along the perimeter of the electro-optical device 10 to retain the electro-optical medium 28 and prevent the electro-optical medium 28 from being exposed to the negative effects of environmental conditions (e.g., oxidation). The intermediate barriers 54 can physically and / or electrically isolate portions of the electro-optical medium 28 into the plurality of cavities 50. In this way, the intermediate barriers 52 can separate the electro-optical device 10 into a plurality of electro-optical elements 42 that can be individually controlled. In addition to providing improved control, the barriers 52, 54 can also provide stability to the electro-optical device 10. The barriers 52, 54 can be formed of epoxy and can be non-conductive.

[0045] Continue to refer Figure 2 and Figure 3 , the switching circuitry 32 may be positioned in a switching layer 56 that is interposed between the middle electrode 30 and one or both of the first and second electrodes 22, 26. As depicted, the switching layer 56 may be sandwiched between the first and second electrodes 22, 26. Effectively, the switching layer 56 can control when and how much power is supplied to the middle electrode 30 by adjusting the switching circuitry 32. The switching layer 56 may have a shape and continuity similar to that of the backplate electrodes (e.g., the first and second electrodes 22, 26), but the specific shape and distribution of the switching layer 56 may vary. For example, the switching layer 56 may be limited to one or more localized areas of the electro-optical device 10. For example, the switching layer 56 may be mesh-shaped, formed only along the side edges 49, or formed within the central area of ​​the electro-optical element 42.

[0046] refer to Figure 3, the electro-optical device 10 may include a flexible circuit 58 that selectively transmits electrical signals between the electro-optical components and the off-board circuitry. The flexible circuit 58 may be electrically connected to the electro-optical device 10 via a conductive connection 60 having a plurality of conductors 62 electrically isolated from each other. The conductive connection 60 may include an anisotropic conductive film (ACF) having an epoxy acrylic adhesive 64 and conductive beads 66 suspended in the adhesive 64. The adhesive 64 may be non-conductive to electrically isolate the beads 66. The beads 66 may provide electrical communication between the plurality of conductors 62 and one or more conductive traces 68 in the electro-optical device 10. For example, the electro-optical device 10 may include a conductive trace 68 disposed on or embedded in the first electrode 22 or the second electrode 26, the switching layer 56, or another portion of the electro-optical device 10. In a more specific example, one conductive trace 68 may be disposed on (one or more) electrodes 22, 26, 30 to provide a global voltage V to the first electrode 22 or the second electrode 26 (e.g., an ITO backplane). G Flex circuit 58 may be formed within switch layer 56 to switch between states of the entire electro-optical device 10, and other conductive traces 68 may be formed within switch layer 56 to connect with switch circuitry 32 (i.e., to individually control electro-optical elements 42). In some embodiments, flex circuit 58 may allow electrical characteristics of electro-optical device 10 to be controlled at a location separate from the electro-optical components, such as a remote human user interface and / or automated control system.

[0047] Now refer to Figure 4 , schematically illustrates an electro-optical device 10 having a control circuit system 70 in electrical communication with the electro-optical element 42. For clarity, the electro-optical device 10 may be referred to as having a visible portion 71a (e.g., a portion visible to a user) and a hidden portion 71b (e.g., features outside the user-visible portion and / or otherwise hidden by barriers 52, 54 and / or other concealing structures (e.g., glass frit, reflective or opaque structures)) of the electro-optical device 10. A dividing line 72 illustrates one possible configuration of the position of the visible portion 71a relative to the position of the hidden portion 71b. The left side of the dividing line 72 may represent the hidden portion 71b, and the right side of the dividing line 72 may represent the visible portion 71a. The specific location of the various components of the electro-optical device 10 may depend on the size, shape, material, application, and / or optical opacity level of each component. For example, components having transparent, translucent, or transflective properties may be disposed within the user-visible portion, while large and / or substantially opaque components may be positioned in the hidden portion 71b. In this way, the user-visible portion of the electro-optical device 10 is not reduced in visibility to the user between states.

[0048] The control circuitry 70 typically controls the electro-optical element 42 by controlling the power circuitry 24 and / or the switching circuitry 32. More specifically, the control circuitry 70 may include a controller 73 that receives voltage or current signals corresponding to the voltage or current associated with the electrodes 22, 26, and 30. The controller 73 may be local or remote to the electro-optical device 10 and may be configured to control only the functions or features of the electro-optical device 10, in addition to other features (e.g., within a vehicle). The controller 73 may generate and transmit control signals to the switching circuitry 32 and / or the power circuitry 24 to adjust the voltage or current applied to the electro-optical element 42. The control signals may be generated based on the voltage and current signals according to programmed instructions stored in the controller 73 (e.g., a memory in communication with the controller 73). For example, if the voltage between the middle electrode 30 and the second electrode 26 (i.e., the voltage across the electro-optical element 42) is less than a target voltage across the electro-optical element 42, the controller 73 may control the switching circuitry 32 to provide a higher voltage to the middle electrode 30. In this way, the voltage across the electro-optical element 42 can be increased to a target voltage. In examples further described herein, the controller 73 can control the switching circuitry 32 to provide a voltage to the second electrode 26 (eg, Figure 7 ) provides a larger or smaller voltage.

[0049] like Figure 4 As schematically shown in FIG, the electro-optical element 42 may have a first electrical approximation of a resistor R in parallel with a resistor-capacitor (RC) series circuit. Figure 4 While the illustrated approximation is not provided, electro-optical element 42 may also have a second electrical approximation of a current source connected in parallel with three parallel RC circuits. This second electrical approximation may be an accurate model when electro-optical element 42 is an electrochromic cell (EC cell). For example, an EC cell can store more charge than a parallel plate capacitor. The electrical approximation of electro-optical element 42 may depend on the specific amount and / or quality of the material (e.g., electro-optic fluid) employed in electro-optical medium 28, as well as the quality and / or type of material forming electrodes 22, 26, and 30. Furthermore, the electrical characteristics of electro-optical element 42 may be transient (e.g., dependent on the transmittance state or temperature of electro-optical element 42). Additional factors that may affect the operation of electro-optical device 10 may include the age of electro-optical device 10 or environmental conditions (e.g., the temperature difference between the interior and exterior of a vehicle). At least one temperature sensor may be provided with electro-optical device 10 to monitor the temperature of electro-optical device 10. As will be described in further detail, the at least one temperature sensor may include a plurality of temperature sensors disposed within electro-optical device 10 and / or around the perimeter of electro-optical device 10. The at least one temperature sensor may include a bandgap voltage reference circuit or other circuitry operable to detect temperature or temperature changes associated with the electro-optical device 10 .

[0050] Continue to refer Figure 4 , the electro-optical element 42 may be in communication with the power circuitry 24 via the first node 74 and the second node 75. The power circuitry 24 may be operable to apply a global voltage V across the first node 74 and the second node 75. G . When the load (e.g., electro-optical element 42) is connected to both the first node 74 and the second node 75, the power circuit system 24 can generate current to flow from the power circuit system 24. In order to better control the current going to / from the electro-optical element 42, the switching circuit system 32 may include a first switching circuit 76 electrically inserted between the first node 74 and the third node 77 electrically connected to the middle electrode 30. In this way, the switching circuit system 32 can selectively allow current to flow between the first node 74 and the third node 77. In some examples further described herein, the switching circuit system 32 may also include a second switching circuit 78 that electrically connects a fourth node 80 electrically connected to the second electrode 26 to the power circuit system 24. As Figure 4 , the second switching circuit 78 may be omitted, and the current through the electro-optical element 42 and / or the voltage across the electro-optical element may be controlled by the first switching circuit 76. This configuration may generally correspond to the "passive plate" arrangement described previously.

[0051] Continue to refer Figure 4 , at least one first resistor 92 is shown electrically connected in series with the first node 74, and at least one second resistor 94 is shown electrically connected in series with the second node 75. Each resistor 92, 94 serves as an electrical approximation of the intrinsic resistive properties of the first electrode 22 and the second electrode 26, respectively. It is generally assumed that the intrinsic resistance of the electrodes 22, 26 increases as the distance from the power circuitry 24 increases. This can produce a corresponding voltage drop across the length L or width of the electro-optical device 10. For example, ITO can have a resistance of 1 ohm / square. Therefore, the control circuitry 70 can monitor and control the electrical parameters of the electrodes (e.g., the first electrode 22 and the second electrode 26) or the areas near the electrodes to maximize the uniformity of the electro-optical device 10 between various states.

[0052] Because the controller 73 can be a digital signal controller, the control circuitry 70 can include at least one converter module 96, 98, 100, 102 for converting electrical signals from one form to another. For example, the controller 73 can be operable to output and receive digital signals, while the switching circuitry 32 and / or portions of the control circuitry 70 can operate in response to and / or output analog signals (e.g., electrical potentials). The converter modules 96, 98, 100, 102 can include digital-to-analog converters (DACs) and analog-to-digital converters (ADCs). The ADCs can be used to monitor various electrical parameters associated with the electro-optical device 10. For example, the first ADC 96 can be operable to receive a voltage measured via a first feedback node 104 in electrical communication with the first electrode 22. The second ADC 98 can be operable to receive a voltage measured via a second feedback node 106 in electrical communication with the middle electrode 30. The first DAC 100 can be used to control the power supply circuitry 24, which can include one or more DC power supplies. It is generally contemplated that any other type of power source may be used to generate power for the electro-optical element 42 (e.g., a current driven circuit, a voltage driven circuit, etc.). The second DAC 102 may be used to control the switching circuitry 32 via the first drive node 108 and the second drive node 109. The power circuitry 24 may be configured to be set to a voltage (e.g., 0V or a negative voltage) that is lower than the element voltage (e.g., the voltage across the electro-optical element 42) to discharge the electro-optical element 42 and cause it to optically clear from a darkened state. In this manner, the current flow through the electro-optical element 42 may be reversed, and charge may be removed from the electro-optical element 42.

[0053] The control circuitry 70 may include a plurality of control transistors 110, 112, 114 in electrical communication with a controller 73 via an integrated circuit (IC 116). A multiplexer 118 may be interposed between the controller 73 and the control transistors 110, 112, 114. Alternatively, the multiplexer 118 may be omitted, and a select signal may be transmitted directly to each of the control transistors 110, 112, 114 via one or more select nodes 119. In some embodiments, the IC 116 may operate as a DAC by processing one or more digital signals provided from the controller 73 to generate a select signal, which may be an analog signal, and transmit the select signal to the multiplexer 118 via the select node 119. The select signal may be controlled by a shift register that allows each output to be sequentially selected at high frequencies. The multiplexer 118 may be operable to output a control signal to one of the plurality of control transistors 110, 112, 114 via at least one control node 136 based on the select signal provided by the integrated circuit 116.

[0054] Continue to refer Figure 4 In some embodiments, the integrated circuit 116 may be a gate driver circuit. The IC 116 may be a source driver IC 116 (eg, Novatek NT39411) to directly control the drive transistor 120 instead of the second DAC 102. Figures 8A-13 As described in further detail, the source driver IC 116 may have multiple outputs to selectively actuate one or more electro-optical segments. The IC 116 may be mounted on the visible portion 71a (as shown) or the hidden portion 71b. The IC 116 may include at least 2,000 digital-analog outputs for controlling multiple electro-optical elements 42 to monitor / control multiple points along a single electro-optical element 42. For example, the IC 116 may include multiple selection nodes 119, each of which is associated with an electro-optical element 42. In this way, the IC 116 may control hundreds, thousands, or more electro-optical elements 42 (or, as discussed with reference to FIG. 9 , hundreds, thousands, or more electro-optical segments) within the electro-optical device 10. One output (e.g., a select signal) may control a multiplexer 118, which in turn may control multiple control transistors 110, 112, 114. It is generally contemplated that one or more functions of the multiplexer 118 may be integrated into the IC 116. Alternatively, features of one or both of IC 116 and multiplexer 118 may be integrated with controller 73 so that controller 73 can directly control switch circuitry 32 without the need for additional components. IC 116 may include one or more shift registers to allow IC 116 to cycle between control commands at the output of IC 116.

[0055] Still continue to refer to Figure 4 , a first control transistor 110 may be inserted between the first feedback node 104 and the first electrode 22. This arrangement may allow for selective connection of the first feedback node 104 with the second electrode 26. A second control transistor 112 may be inserted between the second feedback node 106 and the intermediate electrode 30 to selectively connect the second feedback node 106 with the intermediate electrode 30. A third control transistor 114 may be inserted between the first drive node 108 and the second drive node 109 to control the first switch circuit 76 to electrically connect the second electrode 26 with the third electrode 30. The first control transistor 110 and the second control transistor 112 may be operable to transmit analog signals between the controller 73 and the first electrode 22 and between the controller 73 and the intermediate electrode 30, respectively. Additionally, the third control transistor 114 may be operable to transmit digital signals between the controller 73 and the first switch circuit 76.

[0056] In some embodiments, the control circuitry 70 can direct switching between the states of the electro-optical element 42 by activating or deactivating the drive transistor 120 of the switching circuitry 32. The drive transistor 120 can be inserted between the first electrode 22 and the middle electrode 30. The drive transistor 120 can operate as a switch that, when open (e.g., the drive transistor 120 is deactivated), blocks current from flowing between the first electrode 22 and the middle electrode 30. When the switch is closed (e.g., the drive transistor 120 is activated), current can flow between the first electrode 22 and the middle electrode 30 to dim the electro-optical element 42. When current is no longer applied to the electro-optical medium 28, the electro-optical element 42 can become clear. Similarly, when current is applied to the electro-optical medium 28, the electro-optical element 42 can become dark.

[0057] Continue to refer Figure 4 , the driving transistor 120 may have a first pin 122, a second pin 124, and a third pin 126. The third pin 126 may be operable to control the current between the first pin 122 and the second pin 124. The first pin 122 may be electrically connected to the first electrode 22, and the second pin 124 may be electrically connected to the intermediate electrode 30. The driving transistor 120 may be a field effect transistor (FET) having a source terminal corresponding to the first pin 122, a drain terminal corresponding to the second pin 124, and a gate terminal corresponding to the third pin 126. The FET may be a junction field effect transistor (JFET), an organic field effect transistor (OFET), or a metal oxide semiconductor field effect transistor (MOSFET), and may be controlled based on the voltage across the drain terminal and the source terminal. Alternatively, the driving transistor 120 may be an insulated gate bipolar transistor (IGBT). The driver transistor 120 may be a bipolar junction transistor (BJT) having a collector terminal corresponding to the first pin 122, an emitter terminal corresponding to the second pin 124, and a base terminal corresponding to the third pin 126. The BJT may be an NPN transistor or a PNP transistor and may be controlled based on the voltage across the base terminal and the emitter terminal. It is generally contemplated that the operation of the driver transistor 120 may be described with respect to the current flowing through the third pin 126 and / or the voltage corresponding to the third pin, and that referring to either type of transistor as "current-controlled" or "voltage-controlled" is merely descriptive and non-limiting.

[0058] In some embodiments, the driving transistor 120 and / or the plurality of control transistors 110, 112, 114 are configured as thin film transistors (TFTs) disposed in the visible portion 71a. For example, the switching layer 56 may include the driving transistor 120 and / or the plurality of control transistors 110, 112, 114. The transistors 110, 112, 114, 120 may be substantially transparent and / or may include visible metal traces ( Figure 5 In some embodiments, the metal traces are not noticeably visible from a certain distance (e.g., 15-50 cm) from electro-optical device 10. Thus, one or more of transistors 110, 112, 114, 120 can be disposed on visible portion 71a without negatively impacting the user's field of view.

[0059] Still continue to refer to Figure 4 , the third pin 126 of the driver transistor 120 can be electrically connected to the third control transistor 114 via the second drive node 109. In this way, control of the driver transistor 120 can come from the controller 73. In operation, the controller 73 can transmit a first digital signal via the first output node 130. The first digital signal can be converted into a voltage or current via the second DAC 102. The controller 73 can also be operable to transmit a second digital signal to the IC 116 via the second output node 132. The second digital signal can cause the IC 116 to output a select signal to the multiplexer 118 via the select node 119. The select signal can cause the multiplexer 118 to output a control signal to the third control transistor 114 via the control node 136. The control signal can be an analog signal that is operable to control the third control transistor 114 to generate a voltage at the third pin 126 of the driver transistor 120 and / or allow a current to flow from the second DAC 102 through the first drive node 108 and the second drive node 109 to the third pin 126 of the driver transistor 120. In this manner, controller 73 may be operable to control drive transistor 120 to apply current or voltage to electro-optical element 42 .

[0060] The voltage / current at the third pin 126 of the driver transistor 120 can cause the driver transistor 120 to allow current to flow from the first pin 122 (corresponding to the second electrode 26) to the second pin 124 (corresponding to the middle electrode 30). The first control transistor 110 and the second control transistor 112 can operate similarly to the third control transistor 114. For example, the first control transistor 110 can be operated to provide voltage and / or current measurement data corresponding to the first electrode 22 to the controller 73. The second control transistor 112 can be operated to provide voltage and / or current measurement data corresponding to the middle electrode 30 to the controller 73. The measurement data can be the result of processing analog signals via the first ADC 96 and the second ADC 98. According to some embodiments, the controller 73 can directly control the driver transistor 120. For example, the second DAC 102 can be operated as a simple source driver for the driver transistor 120, so that the third control transistor 114 is omitted. It is generally contemplated that both the gate driver IC 116 and the source driver IC 116 can be used simultaneously. Either or both of the gate driver IC and the source driver IC 116 may be display driver integrated circuits (DDICs).

[0061] To maintain or hold a target voltage or target current for the electro-optical element 42, the electro-optical device 10 may be provided with a capacitor 138. For example, after scanning the electro-optical element 42 or multiple electro-optical segments and the control circuitry 70 monitoring / measuring a reference voltage, the capacitor 138 may provide a sample and hold function. In one example, the capacitor 138 stores an analog voltage during the voltage sweep across the multiple electro-optical segments and / or when the controller 73 processes the voltage data to control the DAC 102. The capacitor 138 may be inserted between the second electrode 26 and the second drive node 109 to control the voltage across the first electrode 22 and the second drive node 109 and / or the current therebetween. For example, the capacitor 138 may be charged and / or discharged based on the voltage difference between the second drive node 109 and the first electrode 22. In operation, the capacitor 138 may maintain the voltage at the gate terminal (i.e., the third pin 126) of the drive transistor 120 while the multiplexer 118 cycles control of the control node 136. In other words, capacitor 138 may allow drive transistor 120 to remain activated after releasing its electrical energy to remove the analog signal from second drive node 109 upon removal of the electrical potential from capacitor 138 .

[0062] Still refer to Figure 4, the drive transistor 120 can be activated / deactivated at a specific frequency during the average activation time, thereby generating an average current or voltage to the third pin 126 at a specific rate. The controller 73 or another portion of the control circuitry 70 can be operable to apply pulse width modulation (PWM) to the third pin 126 of the drive transistor 120. For example, the multiplexer 118 can be operable to pulse the third control transistor 114 on / off at a specific rate while maintaining a constant signal / voltage at the first drive node 108. In this way, the drive transistor 120 can be selectively activated at a frequency that matches or otherwise corresponds to the frequency at which the third control transistor 114 is activated. The first node 74 can provide a relatively high voltage (e.g., between 0.8V and 6V), such that the duty cycle of the drive transistor 120 is operable to control the voltage applied to the middle electrode 30 between 0V and 6V. For example, a 50% duty cycle can result in a 3V voltage being provided by the drive transistor 120. However, due to the resistance of the electrodes 22, 26, 30 (eg, the ITO of the backplane and resistors 92, 94), the voltage drop may cause the same duty cycle (ie, 50%) to produce a voltage lower than 3V.

[0063] In some embodiments, the drive transistor 120 can be controlled to achieve a voltage drop of between 0.2 and 0.8 V across the electro-optical element 42. More specifically, the resistance of the first electrode 22 and the second electrode 26 can be monitored or otherwise factored into a previously programmed algorithm that dictates the function of the controller 73. For example, because there may be some power loss along the ITO backplane (e.g., the first electrode 22 and the second electrode 26), the rate at which the drive transistor 120 is activated can vary depending on environmental conditions, such as heat, sunlight, and / or activation of one or more other circuits of the electro-optical device 10. In some examples, the update rate of the control circuit system 70, or the frequency at which the controller 73 receives data and generates outputs, can be 10 Hz. Individualized control of the electro-optical element 42 can allow the electro-optical element 42 to not exceed a threshold voltage drop (e.g., 1.2 V or 1.4 V). The drive transistor 120 can be made of amorphous silicon to limit leakage from the drive transistor 120 as light passes through the electro-optical device 10.

[0064] Due to the resistive properties of the ITO coating, the potential corresponding to the electrodes (e.g., first electrode 22, second electrode 26, and middle electrode 30) can decrease as the size (e.g., length L, thickness, width, etc.) of the electro-optical device 10 increases and / or the distance from the power circuitry 24 of the electro-optical device 10 increases. In general, the voltage drop across the distance from the power supply can be approximated by half the product of: (i) the square of the distance from the electrical connector 48 (e.g., bus bar), (ii) the resistance value of the ITO coating per unit distance, and (iii) the current loss per area of ​​the electro-optical element 42. Due to the quadratic relationship between the voltage drop and the distance from the bus bar (e.g., length L), increasing the distance by a factor (e.g., 2) results in a voltage drop that is the square of that factor (e.g., 4). Therefore, monitoring the voltage at several points along the electrodes (e.g., first electrode 22, second electrode 26, and middle electrode 30) can allow the controller 73 to individually control each drive transistor 120 of the electro-optical element 42 to achieve uniformity.

[0065] In some embodiments, controller 73 may be operable to perform various methods of controlling the current through electro-optical element 42. Controller 73 may include a processor and memory (not shown). The memory may include instructions that, when executed by the processor, cause the processor to perform at least the functions associated with the components of electro-optical device 10. The processor may include any suitable number of processors, and the memory may include a single disk or multiple disks (e.g., a hard drive) and a memory management module that manages one or more partitions within the memory. The memory may include random access memory (RAM), read-only memory (ROM), or a combination thereof. Controller 73 may be operable to receive electrical feedback (e.g., voltage, current, etc.) corresponding to one or more of first electrode 22, second electrode 26, and intermediate electrode 30. Controller 73 may be configured (e.g., via instructions contained in the memory) to control switching circuitry 32 via integrated circuit 116 and / or other control circuitry 70 based on the electrical information / feedback. In particular, controller 73 may be operable to control drive transistor 120 to cause current to pass through drive transistor 120 to activate electro-optical element 42. The controller 73 may also be operable to control the power circuit system 24 based on the electrical information. For example, the controller 73 may control the power circuit system 24 to reverse the polarity of the power circuit system 24 so that current flows from the second electrode 26 to the first electrode 22. An example of a power inverter circuit is further described herein. Figure 15 Additionally or alternatively, the controller 73 may control the power circuit system 24 to reduce the output voltage of the power circuit system 24 .

[0066] Controlling the current through the electro-optic element 42 can be a closed-loop operation resulting in part from the feedback nodes 104, 106. By monitoring the voltage and / or current at various points within the electro-optic device 10, control of the switching circuitry 32 (e.g., the drive transistor 120) can be tailored to achieve desired characteristics of the electro-optic unit (e.g., the electro-optic element 42). In examples that include at least one temperature sensor, the temperature gradient of the electro-optic device 10 can be monitored by the control circuitry 70 to allow for further individualized control of the electro-optic element 42 or multiple electro-optic segments. In some examples, the transparency of the electro-optic medium 28 can be controlled by employing a voltage across the electro-optic element 42 within a range of approximately 0.2 volts and 0.8 volts. Continuing with this example, generating a 0.8 volt signal can darken the electrochromic fluid in the electro-optic medium 28, and generating a 0.2 volt signal can clear the electrochromic fluid in the electro-optic medium 28. Due to the size and shape of electrodes 22, 26, 30 and the location of applied voltage and / or current, a gradient distribution of electro-optical medium 28 can be provided. In addition, as previously discussed, the thickness of the ITO can affect the resistance of the ITO and, therefore, the voltage and / or current across electro-optical element 42. According to some aspects, the thickness of the ITO can be approximately 1500 nm. In other configurations, the thickness of the ITO can be in the range of approximately 100 nm to approximately 250 nm thick.

[0067] Closed-loop voltage control can allow the voltage across the ITO layer to vary, thereby reducing the sensitivity of the transistor to light and temperature changes. In other words, because changes in electrical characteristics (e.g., voltage) caused by light or temperature changes can be detected, the power applied to the electro-optical element 42 can be controlled to not exceed a voltage or current that can damage the electro-optical element 42. In some examples, the drive transistor 120 can be disabled for a period of time, and the feedback nodes 104, 106 can be monitored during this period of time. Because current may not flow through the electrodes (e.g., the first electrode 22 and the middle electrode 30) when monitoring the voltage across the electro-optical element 42 (except for the discharge of the capacitor 138), accurate voltage measurements can be collected.

[0068] Now refer to Figure 5, generally indicating one possible location for the driver transistor 120 at the void shown (e.g., cavity 142). Cavity 142 can be generally cylindrical. The driver transistor 120 and / or various electrical components of the switching circuit can be disposed in the insulating substrate 140 of the switching layer 56. The insulating substrate 140 can define a cavity 142 for receiving the switching circuitry 32. The cavity 142 can have an open top 144 and / or an open bottom 146, extending a depth D through the insulating substrate 140. The open top 144 can expose the cavity 142 to the first electrode 22, allowing conductive material to extend between the first electrode 22 and at least a portion of the cavity 142. Similarly, the open bottom 146 can extend between the middle electrode 30 and at least a portion of the cavity 142. In this manner, the switching circuit (e.g., the driver transistor 120) can be electrically connected to the second electrode 26 and the middle electrode 30. More specifically, the driving transistor 120 may be positioned adjacent to the open top portion 144, and the second pin 124 of the driving transistor 120 may be positioned adjacent to the open bottom portion 146. The insulating substrate 140 may be formed of a substantially transparent material, such as silicon dioxide.

[0069] Continue to refer Figure 5 , the insulating substrate 140 may include a plurality of electrode traces 160, 162, 164 to electrically connect portions of the cavity 142 to one or more electrical devices spaced apart from the electro-optical element 42. For example, the electrode traces 160, 162, 164 may be part of the control circuitry 70 and connect from the outer surface 153 of the switch layer 56 (e.g., the outer edge of the electro-optical device 10) to one or more of the IC 116, the controller 73, the multiplexer 118, the control transistors 110, 112, 114, etc. As shown, the plurality of electrode traces 160, 162, 164 may be completely enclosed by the insulating substrate 140, or may be disposed on the upper surface 154 and / or lower surface 156 of the switch layer 56 (e.g., in recesses extending into the insulating substrate 140). The plurality of electrode traces 160 , 162 , 164 may include a first electrode trace 160 , a second electrode trace 162 , and a third electrode trace 164 , each extending along a non-intersecting path.

[0070] In some embodiments, a first electrode trace 160 can interconnect the first control transistor 110 and the second electrode 26. A second electrode trace 162 can interconnect the second control transistor 112 and the intermediate electrode 30. A third electrode trace 164 can interconnect the third control transistor 114 and the third pin 126 of the drive transistor 120. The plurality of electrode traces 160, 162, 164 can be formed of ITO, or can be metal wires or metal coatings having a narrow width (e.g., between 0.1 micrometers and 1 mm) such that the electro-optical element 42 remains substantially transparent. Although not shown in detail, at least one temperature sensor can also be disposed within the insulating layer 140 within the cavity 142 or a separate cavity. Additional electrode traces can be included in the electro-optical device 10 to allow for the transmission of an electrical signal corresponding to a voltage and / or current reading from the at least one temperature sensor to the control circuitry 70. For example, the at least one temperature sensor can be comprised of one or more TFTs to allow for substantial transparency of the electro-optical device 10 while providing personalized control based on a temperature gradient across the electro-optical device 10.

[0071] Now refer to Figure 6 and Figure 7 , the electro-optical device 10 of the second configuration includes two active plates. More specifically, the electro-optical device 10 of the second configuration may include a first intermediate electrode 166 and a second intermediate electrode 168, or a plurality of intermediate electrodes 178 ( Figure 8A ). Each of the plurality of intermediate electrodes 178 may be electrically isolated from the other intermediate electrodes 178. The electro-optic medium 28 may be disposed between the first intermediate electrode 166 and the second intermediate electrode 168. In this arrangement, a pair of intermediate electrodes 166, 168 and the electro-optic medium 28 form the electro-optic element 42, rather than one intermediate electrode 30 and the first and second electrodes 22, 26 as shown in the first configuration. As shown, the electro-optic device 10 may include a first switching layer 170 sandwiched between the first electrode 22 and the first intermediate electrode 166. The second switching layer 172 may be sandwiched between the second electrode 26 and the second intermediate electrode 168. Similar to the single switching layer 56, the first switching layer 170 and the second switching layer 172 may include the features described as part of the switching layer 56 (i.e., the switching circuits 76, 78, the drive transistor 120, etc.).

[0072] like Figure 7As specifically shown in FIG, the switching circuit system 32 may include a first drive transistor 174 and a second drive transistor 176 (e.g., two or more drive transistors 120). The first drive transistor 174 may be operable to control the electrical connection between the first electrode 22 and the first intermediate electrode 166. The second drive transistor 176 may be operable to control the electrical connection between the second electrode 26 and the second intermediate electrode 168. The first switch circuit 76 and the second switch circuit 78 may be controlled via the same control circuit system 70 or separate control circuits (i.e., first control circuit and second control circuit). The first control circuit and the second control circuit are generally Figure 7 Although shown as separate components, the first control circuit 70a and the second control circuit 70b can be implemented as a single control device (e.g., Figure 12 116 in FIG. 11 ). For example, each of the control circuits 70a, 70b may include a combination of the previously described electrical components (e.g., IC 116, multiplexer 118, and control transistors 110, 112, 114). The first control circuit 70a and the second control circuit 70b may be independently controlled by the controller 73. In this manner, the controller 73 may control the first control circuit 70a differently than the second control circuit 70b. For example, the second drive transistor 176 may be controlled to pulse at a lower rate or a higher rate than the first drive transistor 174, or vice versa.

[0073] Providing a second switching layer 172 can allow for finer control of the potential, and therefore the current, across the electro-optical element 42. Since the state of the electro-optical element 42 can depend on the relative voltages of the first and second intermediate electrodes 166, 168, monitoring the voltage on either or both sides of the electro-optical element 42 can allow the controller 73 to provide a more accurate response. Furthermore, including a second drive transistor 176 can provide even greater precision in achieving a desired current or voltage change.

[0074] Now refer to Figures 8A-13Various embodiments of the electro-optic device 10 include at least one electrode 178 (e.g., a plurality of intermediate electrodes 178) and at least one electro-optic segment 179 (e.g., a plurality of electro-optic segments 179). In some embodiments, the electro-optic device 10 includes a plurality of intermediate electrodes 178 and a plurality of electro-optic segments 179, each intermediate electrode and each electro-optic segment forming part of the electro-optic element 42. In some embodiments, the electro-optic device 10 includes a plurality of intermediate electrodes 178 and a single electro-optic segment 179, which together form part of the electro-optic element 42. In some embodiments, the electro-optic device 10 includes a single intermediate electrode 178 and a plurality of electro-optic segments 179, which together form part of the electro-optic element 42. Although the intermediate electrode 178 may be located between the first electrode 22 and the second electrode 26, it should be understood that the intermediate electrode 178 may replace one or both of the first electrode 22 and the second electrode 26 (e.g., via a pair of opposing intermediate electrodes 178a, 178b). Therefore, the "intermediate" or "third" electrode described herein may also be generally described as an element electrode. As will be described, the above embodiments may include a transistor array 180 having a series of conductive modules (e.g., thin film transistors, such as those previously designated numerals 110, 112, 114, and 120) that provide current sources to discrete locations in at least one element electrode 178, which in turn provides current to at least one electro-optical segment 179. More specifically, the transistor array 180 provides a pattern of transistors positioned substantially uniformly across the electro-optical device 10 that, in operation, produces highly controlled discrete dimming of a localized region 177 with individual or selected transistors or global dimming with each transistor based on operation of the switching circuitry 32.

[0075] refer to Figure 8A , at least one intermediate electrode 178 is shown as including a plurality of intermediate electrodes 178 arranged in various patterns (e.g., rows 182 and columns 184). In some embodiments, the intermediate electrodes 178 are hexagonal in shape, thereby forming a hexagonal grid. However, it should be understood that in other embodiments, the shapes of the intermediate electrodes 178 are rectangular, octagonal, decagonal, etc. The transistor array 180 includes at least one central transistor 180a and may also include a plurality of outer transistors 180b surrounding the central transistor 180a. Each transistor array 180 can be organized into transistor rows 181 and columns 183 (e.g., a hexagonal grid). In operation, each of the transistors 180a, 180b can cause the localized regions 177 to dim. Generally speaking, when current is applied by the transistors 180a, 180b, these localized regions 177 expand in a radially symmetrical pattern. The transistors 180a, 180b can be configured and function similarly to the control transistors 110, 112, 114 described previously.

[0076] Now refer to Figure 8B , at least one electro-optical segment 179 is shown as including a plurality of electro-optical segments 179. At least one (e.g., a plurality) of transistor arrays 180 may be arranged along each of the plurality of electro-optical segments 179. Each electro-optical segment 179 may include a peripheral edge 185 extending substantially around a circumference. For example, the electro-optical segment 179 may be shaped as a perfect circle with a non-varying radius. In some embodiments, the circle may be an imperfect circle with a varying radius. For example, an imperfect circle may include one or more interruptions that deviate from the circumference (e.g., an icosagon, a peripheral edge 185 having one or more ripples, tails, depressions, etc.). As used herein, the term "perfect circle" means a shape that extends completely around a circumference with a non-varying radius. However, it should be understood that due to production limitations, a perfect circle may include negligible variations. It should also be understood that the electro-optical segment 179 may include other shapes, such as a rectangle, a hexagon, etc. The electro-optical segment 179 can include a segment center 187, for example, which can be substantially equidistant from or otherwise substantially centered on the peripheral edge 185. A central region 189 can surround the segment center 187. The central region 189 can extend around the center 187 toward the peripheral edge 185 and be confined to 80% of the area of ​​the electro-optical segment 179, for example, to 60% or less, 50% or less, 40% or less, 30% or less, 20% or less, or 10% or less of the area of ​​the electro-optical segment. In some embodiments, at least one of the transistors 180a, 180b can be aligned with the segment center 187 and / or the central region 189. The plurality of electro-optical segments 179 can be arranged into a plurality of groups, wherein each of the plurality of groups defines a segment array 191 comprising the central electro-optical segment 179 and outer electro-optical segments 179. Each segment array 191 may be organized into rows 193 and columns 195 (eg, a hexagonal grid or mesh). It will be appreciated that each electro-optical segment 179 may include a plurality of transistor arrays 180 within a peripheral edge 185 .

[0077] Now refer to Figure 8C , at least one electro-optical segment 179 may include a single electro-optical segment 179, and a plurality of transistor arrays 180 may be arranged along the single electro-optical segment 179 and a single intermediate electrode 178 (e.g., electrodes 178a, 178b). As explained, the localized regions 177 may expand in a radially symmetrical pattern (e.g., a circle) to a substantially darkened state, wherein at least one localized region 177 contacts at least one adjacent localized region 177 (e.g., having a high voltage as described herein) but does not yet overlap. It should be understood that in the fully darkened state, the localized regions 177 may begin to overlap or completely overlap.

[0078] Now refer to Figure 8D, shows the spatial and relative size relationship of the localized regions 177 in the substantially darkened state. In the substantially darkened state, the darkened localized regions 177 may have a radius "r", and the transistor array 180 may be generally defined as a hexagonal shape including six sides having a length "L". In some embodiments, the length L is twice the size of the radius r. In other embodiments, L is less than the radius r. The length L may be uniform or different. In some embodiments, each localized region 177 in the substantially darkened state has an area defined by the following equation (1): (圆) (i.e. surface area):

[0079] area (圆) =(π / 4)(a) 2

[0080] According to the above equation (1), the area of ​​the transistor array 180 is (六边形) (i.e., surface area) can be determined by the following equation (2):

[0081]

[0082] In this arrangement, when each transistor 180a, 180b in the transistor array 180 is actuated, each local region 177 in the substantially darkened state in equation (1) is equal to the area (六边形) The ratio of the apertures between each local region is less than 2 / 10, for example, less than 1 / 10. Similarly, when each transistor 180a, 180b in the electro-optical device 10 is actuated, the area of ​​the local region 177 is less than 2 / 10, for example, less than 1 / 10, compared to the non-darkened area (e.g., the apertures between the local regions) on each (e.g., one or more) electro-optical segment 179.

[0083] Continue to refer Figure 8D , the outer transistors 180b can be located where the sides of the hexagonal shape meet, so that there are six outer transistors 180b and one center transistor 180a. In an embodiment having multiple electro-optical segments 179 (i.e., Figure 8B), the outer electro-optical segments 179 can be organized so that the center 187 of each outer electro-optical segment 179 is similarly located where the sides of the hexagonal shape meet, so that there are six outer electro-optical segments 179 and one center electro-optical segment 179 in each segment array 191. It should be understood that the term hexagonal can refer to a perfect hexagon or an imperfect hexagon. A perfect hexagon can be defined as a hexagon with equal sides L, each side extending at a uniform relative angle. However, it should be understood that a perfect hexagon can include negligible variations due to production limitations. An imperfect hexagon can be defined as a hexagon with unequal sides and uniform angles, equal sides and uneven angles, or unequal sides and uneven angles.

[0084] Now refer to Figure 8E and Figure 8F In some embodiments, the transistor array 180 may also be defined by staggered rows 181 and uniform columns 183 ( Figure 8E ), the transistor array 180 may be defined by uniform rows 181 and staggered columns 183 ( Figure 8F ), or more generally, transistor array 180 may include transistors arranged in a hexagonal grid. The distribution of transistor array 180 may extend along a surface having a width (W) and a height (H). Figure 8E , the staggered rows 181 and uniform columns 183 can define an upwardly extending diagonal line of transistors 180a, 180b in adjacent columns 183, indicated by a dashed line. The transistors 180a, 180b along the upwardly extending diagonal line can extend along a 2:1 pitch or an angle of approximately 27°. In other words, the transistors 180a, 180b in each uniform column 183 can be spaced apart by a distance D, wherein the transistors 180a, 180b in each adjacent uniform column 183 are centered along the distance D. Figure 8F , the uniform rows 181 and the staggered columns 183 may define upwardly extending diagonal lines of transistors 180a, 180b in adjacent columns 183, indicated by dashed lines. The transistors 180a, 180b along the upwardly extending diagonal lines may extend along a 1:2 pitch or an angle of approximately 63°. In other words, the transistors 180a, 180b ( Figure 8E ) can be spaced apart by a distance D, wherein the transistors 180a, 180b in each adjacent uniform column 183 are aligned with each other. In this way, the transistors 180a, 180b in each row 181 can be spaced apart by a distance D, wherein the transistors 180a, 180b in each adjacent uniform row 181 are aligned centrally along the distance D.

[0085] Two single active plates ( Figure 8A and Figure 12 ) and dual active boards ( Figure 10 and Figure 13 ) embodiment. In an embodiment having multiple electro-optical segments 179, barriers 52, 54 may be positioned therebetween. In an embodiment having a single electro-optical segment 179, intermediate barrier 52 may be omitted, and electro-optical segment 179 may be selectively dimmed in localized regions 177, or fully dimmed by directing current to each transistor 180a, 180b through operation of switching circuitry 32. The array of transistors 180 is positioned to provide uniform and universal power distribution globally or to specific localized regions within localized regions 177.

[0086] like Figures 8A to 9D , transistor array 180 may include any number (e.g., greater than 1000, greater than 10,000, greater than 100,000, greater than or about 500,000, greater than or about 1,000,000) of transistors 180a, 180b in a hexagonal grid. In this manner, a desired transmittance of various portions (e.g., localized regions 177) of electro-optical element 42 may be controlled to produce a desired shape and / or gradient for electro-optical device 10. For example, it is generally contemplated from the present disclosure that electro-optical device 10 may include any number (e.g., tens, hundreds, millions, etc.) of electro-optical segments 179 in a single electro-optical device 10, each electro-optical segment aligned with at least one transistor 180a, 180b. The optical spatial resolution of the shape formed by at least one electro-optical segment 179 may depend on the number of electro-optical segments 179 and / or transistors 180a, 180b in electro-optical device 10. Furthermore, because the transistors 180a, 180b are in a hexagonal grid (i.e., diagonal rows) comprising staggered rows 181 and / or columns 183, the traces for power, control, and sense distribution (i.e., operating traces 197) can be simplified by allowing for a larger incorporation area. For example, Figure 9A and Figure 9B An operating trace 197 is shown that includes a portion that overlaps the electro-optical segment 179. In such embodiments, certain components of the operating trace 197 may be transparent, translucent, opaque, and / or sufficiently small to be imperceptible to a user. The operating trace 197 may extend between the transistor array 180, for example, between the individual transistors 180a, 180b. Figure 9C and Figure 9DOther embodiments are shown in which the operating trace 197 generally follows the middle barrier 52 or the end barrier 54 of at least one electro-optical segment 179 that alternates between rows and columns. The operating trace 197 can extend between the transistor array 180, for example, between the individual transistors 180a, 180b. It should be understood that the electro-optical segments 179 and the middle electrodes 178 can be stacked and evenly distributed, or can vary in size, shape, and distribution. In some embodiments, the operating trace 197 is configured as the electrode traces 160, 162, 164 described previously.

[0087] The size and shape of the electro-optic segments 179 can be uniform or non-uniform. For example, some electro-optic segments 179 can be shaped as circles (e.g., perfect circles, imperfect circles, etc.), and other electro-optic segments 179 can be elongated and / or shaped as regular polygons (e.g., hexagons, squares), such as the visible boundary surrounding the electro-optic device 10. In some embodiments, one or more of the electro-optic segments 179 can form a curved mark, logo, etc. In this way, the electro-optic device 10 can be operable to display a mark by controlling the electro-optic medium 28 to transmit light within the mark and block light outside the mark, or vice versa. Due to the differences in the size and / or shape of the electro-optic segments 179 and or in combination with individualized control of the transistors 180a, 180b in the transistor array 180 described above to switch the intermediate electrodes 178a and 178b, a specific gradient or pattern can be formed in the electro-optic device 10.

[0088] More specifically refer to Figures 9A to 10 , portions of the control circuitry 70 may be located on one or both of the substrates 38, 40. For example, the power circuitry 24 and / or the control circuitry 70 (e.g., one or more of the converter modules 96, 98, 100, 102) may be located in the hidden portion 71b along the perimeter of the electro-optical device 10. The power circuitry 24 and / or the control circuitry 70 may be connected to the electro-optical segment 179 via sense and drive buses (typically by Figure 9A and Figure 9B ). The sense and drive buses may be provided via the electrode traces 160, 162, 164, as previously described. The electrode traces 160, 162, 164 may be formed in insulating portions of the switch layer 56 between the electro-optical segments 179. In this manner, the electrode traces 160, 162, 164 may remain electrically isolated from all electro-optical segments 179, while specific electro-optical segments 179 may be controlled / monitored by the control circuitry 70.

[0089] refer to Figure 10, a cross-sectional view of a portion of the electro-optic device 10 is shown, which shows a pair of side-by-side electro-optic segments 179 (e.g., a first electro-optic segment 186 and a second electro-optic segment 188). The first electro-optic segment 186 and the second electro-optic segment 188 can be spaced apart from each other. The optical transmittance of the first electro-optic segment 186 and the second electro-optic segment 188 can be individually controlled to achieve a desired pattern or clearing / dimming rate for the electro-optic device 10. It is generally contemplated that the first electro-optic segment 186 can be parallel to the second electro-optic segment 188. Although a dual active plate configuration is shown in the exemplary figures, it is generally contemplated that the electro-optic segments 186, 188 can be part of the electro-optic device 10 having a single active plate.

[0090] As with the configuration having two intermediate electrodes 178a, 178b (e.g., electrodes 166, 168) in a single electro-optical element 42 (e.g., Figure 6 ) Similarly described, the first switching layer 170 can be disposed between the first electrode 22 and a pair of first intermediate electrodes 178a, 178b. The first switching layer 170 may include a first switching circuit 76 for controlling the first electro-optical segment 186. The first switching layer 170 may also include a third switching circuit 190 for controlling the second electro-optical segment 188 (see Figure 12 and Figure 13 ). Similarly, the second switching layer 172 may be disposed between the second electrode 26 and a pair of second intermediate electrodes 178a, 178b. The second switching layer 172 may include a second switching circuit 78 for controlling the first electro-optical segment 186. The second switching layer 172 may also include a fourth switching circuit 192 for controlling the second electro-optical segment 188. Each of the switching circuits 76, 78, 190, 192 may be controlled as a group or individually by employing a combination of the various electrical components previously discussed (e.g., the controller 73, the control circuit system 70, the multiplexer 118, the control transistors 110, 112, 114, the IC 116, the DACs 100, 102, the ADCs 96, 98, etc.). These switching circuits 76, 78, 190, 192 are generally Figure 13 Middle picture.

[0091] Return Reference Figures 8A-9D , one or more electro-optical segments 179 can be arranged in a hexagonal grid-like configuration to form a segment array 191 of electro-optical segments 179, however, segment arrays 191 of any shape and / or arrangement can be formed. For example, segment array 191 can be arranged linearly to have only one dimension (e.g., a single row). Alternatively, segment array 191 can be irregular and / or form a grid corresponding to a mark. The array 191 depicted in the figure is a non-limiting arrangement of segment array 191.

[0092] Controlling one local area 177 can affect the control of adjacent local areas 177. For example, when adjusting the voltage associated with a first local area 177, the voltage supplied to surrounding local areas 177 can also be changed. Thus, an oscillating feedback loop can be implemented because the controller 73 can be operable to sample discrete-time feedback signals associated with the voltages of the local areas 177. In other words, controlling the drive transistors 180a and 180b can cause changes in the voltages of adjacent local areas 177 due to their common connection to the first and second electrodes 22, 26, and the element electrode 178, and the controller 73 can exploit this response to maximize uniformity. Because each local area 177 is staggered and spread out in a circle, uniform changes will occur. Consequently, any voltage received by adjacent local areas 177 will be substantially uniform.

[0093] As previously described with respect to a single switch layer 56, the switch layers 170, 172 may include a plurality of electrode traces 160, 162, 164 and define a cavity 142 associated with each switch circuit 76, 78, as shown. Figure 11 . Thus, each switch layer 170, 172 may include a first set of electrode traces 194 and a first cavity 196 corresponding to the first electro-optical segment 186. Each switch layer 170, 172 may also define a second set of electrode traces 198 and a second cavity 200 corresponding to the second electro-optical segment 188. Each cavity 196, 200 may be generally cylindrical in shape. It is generally contemplated that each set of electrode traces 194, 198 may include additional electrode traces to allow for dual active plate control, general monitoring, and / or temperature monitoring. The first switch circuit 76 and the third switch circuit 190 may be disposed in the first cavity 196 and the second cavity 200 of the first switch layer 170, respectively. The second switch circuit 78 and the fourth switch circuit 192 may be disposed in the first cavity 196 and the second cavity 200 of the second switch layer 172, respectively. In some embodiments, the first electrode trace 194 and the second electrode trace 198 are configured as the electrode traces 160, 162, 164 described previously.

[0094] Now refer to Figure 12 and Figure 13 , shows a configuration of an electro-optical device 10 having a first electro-optical segment 186 and a second electro-optical segment 188. It is generally contemplated that any number of electro-optical segments 179 may be provided in parallel with the electro-optical segments 186, 188, as indicated by the continuation of the first electrode 22 and the node through the second electro-optical segment 188. Figure 12 , an electro-optical device 10 is shown with a single active plate, and Figure 13 An electro-optical device 10 having two active plates is shown. As illustrated in the figure, a third control circuit 70c may be provided to control a third switching circuit 190. Figure 13As shown in FIG, a fourth control circuit 70d may be provided to control the fourth switch circuit 192. It is generally contemplated that each control circuit 70a, 70b, 70c, 70d may be controlled by a single IC 116 via a select node of each control circuit. Figure 12 and Figure 13 The configuration shown in FIG1 illustrates the scalability of the electro-optical segment 179 in the electro-optical device 10. It is generally contemplated that, according to aspects of the present disclosure, a hybrid electro-optical device 10 can be configured having a partial dual active plate configuration and a partial single active plate configuration. In other words, in some configurations, the electro-optical device 10 includes two active plates associated with the first electro-optical segment 186 and one active plate associated with the second electro-optical segment 186.

[0095] In operation, the IC 116 can be used to adjust the current into each segment, and the control loop can then monitor the voltage and control the drive transistors 174, 176 to the desired set point. In this way, the second DAC 102 can continuously and directly drive each electro-optical segment 179. In a 0.5m x 1.0m window assembly (e.g., a skylight), up to 1,000 electro-optical segments can be provided, each having a footprint of 1 square millimeter. Therefore, the resistance of the ITO backplane can significantly affect the voltage / current of each segment over the length L or width W of the electro-optical device 10. Therefore, the controller 73 can be configured to include voltage and current feedback / control to safely and uniformly control the electro-optical segments 179.

[0096] refer to Figure 14One configuration of the electro-optical element 42 may include at least one operational amplifier 202, 204 operable to control one or more of the drive transistors 120 (e.g., drive transistors 174, 176). For example, each switching circuit (e.g., second switching circuit 78 and fourth switching circuit 192) may include a first operational amplifier (op-amp 202) electrically connected to a second operational amplifier 204 downstream of the first operational amplifier 202. Each operational amplifier 202, 204 may include an inverting input 206, a non-inverting input 208, and an output 210 that controls an output signal based on a voltage difference between the inverting input 206 and the non-inverting input 208. Additionally, each operational amplifier 202, 204 may include two power inputs 212 to allow each operational amplifier 202, 204 to amplify a signal supplied to the operational amplifier. The first operational amplifier 202 may be operable to receive a voltage difference between the first electrode 22 and the middle electrode 30. The second operational amplifier 204 can be operable to receive a voltage difference between the first output 214 of the first operational amplifier 202 and the voltage at a control signal node 215. The control signal node 215 can correspond to the first drive node 108 of the previous embodiment. The second output 216 of the second operational amplifier 204 can be electrically connected to the third pin 126 of the drive transistor 120.

[0097] In operation, the voltage at the control signal node 215 can effectively control the voltage across the electro-optical segments 186, 188. For example, the power circuitry 24 can output a high global voltage V G (For example, 6V). Global voltage V G The polarity of can be reversed to enable faster clearing of the electro-optical device 10. Alternatively, a 4-transistor H-bridge 218 can be used to drive each individual electro-optical segment 186, 188 in either polarity ( Figure 15 For example, one H-bridge 218 may be associated with each electro-optical segment of a pair of electro-optical segments 186, 188 and / or one H-bridge 218 may be used to control the global voltage V Gpolarity, as shown. It is contemplated that the controller 73 can be configured to activate the individually controlled transistors of the H-bridge 218 (e.g., the first transistors 220, 222) when the second transistors 224, 226 of the H-bridge 218 are deactivated to provide a non-inverted power signal to the electro-optical device 10 (e.g., the individual electro-optical segments 179). Similarly, the controller 73 can be configured to activate the second transistors 224, 226 of the H-bridge 218 when the first transistors 220, 222 are deactivated to provide an inverted power signal to the electro-optical device 10. A voltage protection circuit 228, such as the parallel diode circuit shown, can be combined with each of the transistors 220, 222, 224, 226 to prevent electrical shorts in the H-bridge 218 and / or the power supply. It is contemplated that the 4-transistor H-bridge 218 can be combined with any of the previously described configurations in addition to or as an alternative to the control transistors 110, 112, 114.

[0098] One electrode of each electro-optical segment 186, 188 can be connected to the first node 74 of the power circuitry 24. The voltage of the control signal node 215 can be related to the global voltage V G and the difference between the target voltages across the electro-optical segments 186 and 188. The second operational amplifier 204 can then output a signal based on the difference between the target voltage at the control signal node 215 and the output voltage of the first operational amplifier 202. Since the output voltage of the first operational amplifier 202 can be proportional to the voltage across the electro-optical segments 186 and 188, the global voltage V G Control of the control signal node 215 may result in self-regulation (e.g., pre-configured voltage regulation of the electro-optical segment 179). In other words, according to some embodiments, the controller 73 may not require direct feedback to achieve adequate voltage control of the electro-optical element 42. In some configurations, the controller 73 may be omitted, and the reference voltage provided by the control signal node 215 may be provided directly by the power supply circuitry 24.

[0099] The electro-optical element 42 and the first and second substrates 38, 40 can be formed from a variety of materials. For example, the first and second substrates 38, 40 can comprise plastic materials. Plastic materials used for the first and second substrates 38, 40 can include, but are not limited to, polycarbonate, polyethylene terephthalate (PET), polyester, polyimide, polyamide, acrylic, cyclic olefins, polyethylene (PE), metallocene polyethylene (mPE), polyethylene naphthalate (PEN), silicone, urethane, and various polymeric materials. The first and second substrates 38, 40 can also be various forms of glass, including, but not limited to, soda-lime float glass, borosilicate glass, boroaluminosilicate glass, or various other compositions. When glass substrates are used, the first and second substrates 38, 40 can be annealed, thermally strengthened, chemically strengthened, partially tempered, or fully tempered. The electro-optical element 42 forming a panel (e.g., a window, viewing device, selective display device, etc.) can be supported by a frame, which can correspond to a portion or the entire frame that can be used to support a window panel as needed.

[0100] The first and second substrates 38, 40, and one or more protective layers may be adhered together by one or more laminate materials. For example, the laminate material may correspond to at least one of the following materials: polyvinyl butyral (PVB), ethylene vinyl acetate (EVA), thermoset EVA ethylene vinyl acetate (EVA), and thermoplastic polyurethane (TPU). Specific materials are described herein and may correspond to exemplary materials that may be used as laminate materials adhered to one or more of the first and second substrates 38, 40 and / or additional protective layers or coatings.

[0101] According to various aspects, the electro-optical element 42 may include a memory chemistry configured to maintain a transmissive state when the vehicle and the window control module are inactive (e.g., not actively supplied with energy from the vehicle's power source). That is, the electro-optical element 42 may be implemented as an electrochromic device with permanent color memory, configured to provide current during a clearing period for an extended period after charging. Examples of such devices are discussed in U.S. Patent No. 9,964,828, entitled "Electrochemical Energy Storage Devices," the disclosure of which is incorporated herein by reference in its entirety.

[0102] The electro-optical element may correspond to an electrochromic device configured to change the transmittance of the windows discussed herein in response to a voltage applied from the window. Examples of control circuits and related devices that may be configured to provide electrodes and hardware configured to control electro-optical elements are generally described in commonly assigned U.S. Patent No. 8,547,624, entitled “VARIABLE TRANSMISSION WINDOW SYSTEM,” U.S. Patent No. 6,407,847, entitled “ELECTROCHROMIC MEDIUM HAVING A COLOR STABILITY,” U.S. Patent No. 6,239,898, entitled “ELECTROCHROMIC STRUCTURES,” U.S. Patent No. 6,597,489, entitled “ELECTRODE DESIGN FOR ELECTROCHROMIC DEVICES,” and U.S. Patent No. 6,597,489, entitled “ELECTRO-OPTIC WINDOW INCORPORATING A DISCRETE PHOTOVOLTAIC DEVICE), the entire disclosure of each of which is incorporated herein by reference.

[0103] Examples of electrochromic devices that can be used for windows are described in U.S. Patent No. 6,433,914, entitled “COLOR-STABILIZED ELECTROCHROMIC DEVICES,” U.S. Patent No. 6,137,620, entitled “ELECTROCHROMIC MEDIA WITH CONCENTRATION-ENHANCED STABILITY, PROCESS FOR THE PREPARATION THEREOF AND USE IN ELECTROCHROMIC DEVICES,” and U.S. Patent No. 6,137,620, entitled “ELECTROCHROMIC MIRROR WITH TWOTHIN GLASS ELEMENTS AND A GELLED ELECTROCHROMIC MEDIUM.” No. 5,940,201 entitled “VEHICULAR REARVIEW MIRRORELEMENTS AND ASSEMBLIES INCORPORATING THESE ELEMENTS,” the entire disclosure of each of which is incorporated herein by reference. Other examples of variable transmission windows and systems for controlling the same are disclosed in commonly assigned U.S. Patent No. 7,085,609, entitled "VARIABLE TRANSMISSION WINDOW CONSTRUCTIONS," and U.S. Patent No. 6,567,708, entitled "SYSTEM TO INTERCONNECT, LINK, AND CONTROL VARIABLE TRANSMISSION WINDOWS AND VARIABLE TRANSMISSION WINDOW CONSTRUCTIONS," each of which is incorporated herein by reference in its entirety. In other embodiments, the electro-optical device may include a suspended particle device, a liquid crystal, or another system that varies transmittance by applying some electrical property.

[0104] The invention disclosed herein is further summarized in the following paragraphs and further characterized by any and all combinations of the various aspects described therein.

[0105] According to one aspect of the present disclosure, an electro-optical device includes a first substrate and a second substrate. A first electrode is coupled to the first substrate, and a second electrode is coupled to the second substrate. An electro-optical medium is disposed between the first electrode and the second electrode and is configured to be electrically activated between states. A plurality of transistors are electrically connected to the electro-optical medium to switch a localized region of the electro-optical medium between the states.

[0106] According to another aspect of the present disclosure, a plurality of transistors form a plurality of transistor arrays arranged in rows and columns.

[0107] According to another aspect of the present disclosure, each transistor array defines a hexagonal shape having six sides, and the plurality of transistors in each transistor array include outer transistors and central transistors, wherein each of the outer transistors is located at a point where two sides of the hexagonal shape are connected, and the central transistor is located between the outer transistors.

[0108] According to another aspect of the present disclosure, the central transistor is equidistantly spaced from each of the outer transistors.

[0109] According to yet another aspect of the present disclosure, a plurality of transistor arrays are staggered along rows and uniformly aligned along columns.

[0110] According to yet another aspect of the present disclosure, a plurality of transistor arrays are staggered along the columns and uniformly aligned along the rows.

[0111] According to another aspect of the present disclosure, a plurality of operating traces extend between the transistor array and provide power to each of the plurality of transistors.

[0112] According to yet another aspect of the present disclosure, the plurality of operating traces extend in parallel lines.

[0113] According to yet another aspect of the present disclosure, the parallel lines are diagonal to the rows and columns.

[0114] According to another aspect of the present disclosure, a plurality of operating traces follows a perimeter of the transistor array along one of the rows and columns.

[0115] According to yet another aspect of the disclosure, a plurality of operating traces follows the perimeter of the transistor array alternating between rows and columns.

[0116] According to yet another aspect of the present disclosure, a plurality of intermediate electrodes are located between the first electrode and the second electrode and in contact with the electro-optic medium.

[0117] According to one aspect of the present disclosure, a plurality of transistors are in electrical communication with the electro-optic medium through a plurality of intermediate electrodes.

[0118] According to yet another aspect of the present disclosure, the intermediate electrodes are electrically isolated from each other.

[0119] According to yet another aspect of the present disclosure, each of the intermediate electrodes is in selective electrical communication with one of the first electrode and the second electrode using a switching layer.

[0120] According to another aspect of the present disclosure, an electro-optical device includes a first substrate and a second substrate. A first electrode is coupled to the first substrate, and a plurality of intermediate electrodes are coupled to the second substrate. An electro-optical medium is disposed between the first electrode and the plurality of intermediate electrodes and is configured to be electrically activated between states. A plurality of transistor arrays are electrically connected to the electro-optical medium via the plurality of intermediate electrodes to switch localized regions of the electro-optical medium between states.

[0121] According to yet another aspect of the present disclosure, the second electrode is disposed between the second substrate and the plurality of intermediate electrodes.

[0122] According to yet another aspect of the present disclosure, each of the intermediate electrodes defines a hexagonal shape having six sides.

[0123] According to another aspect of the present disclosure, each of the intermediate electrodes is arranged in rows and columns, and one of the rows and columns is staggered.

[0124] According to yet another aspect of the present disclosure, a plurality of transistor arrays each include a center transistor centrally connected to a different one of the intermediate electrodes.

[0125] According to another aspect of the present disclosure, an electro-optical device includes a first substrate and a second substrate. An electro-optical medium is disposed between the first and second substrates and is configured to be electrically activated between states. A plurality of transistors are electrically connected to the electro-optical medium to switch localized regions of the electro-optical medium between the states. The plurality of transistors are arranged in a hexagonal grid.

[0126] According to yet another aspect of the present disclosure, a plurality of operating traces extend between each of the transistors and a control system for individually providing power to each transistor.

[0127] It should be understood that any described process or step within the described process can be combined with other disclosed processes or steps to form a structure within the scope of the present invention. The exemplary structures and processes disclosed herein are for illustrative purposes and should not be understood as limiting.

[0128] It will be further understood that changes and modifications may be made to the structures and methods described above without departing from the concepts of the inventive apparatus, and that such concepts are intended to be encompassed by the appended claims unless the wording of the claims expressly states otherwise.

[0129] The above description is to be considered as a description of the illustrated embodiments only. Modifications to the device may be made by those skilled in the art and by those skilled in the art of making or using the device. Therefore, it should be understood that the embodiments shown in the drawings and described above are for illustrative purposes only and are not intended to limit the scope of the device, which is defined by the appended claims interpreted in accordance with the principles of patent law (including the doctrine of equivalents).

Claims

1. An electro-optical device, characterized in that include: a first substrate; a second substrate; a first electrode coupled to the first substrate and a second electrode coupled to the second substrate; an electro-optic medium disposed between the first electrode and the second electrode and electrically activated between states; as well as A plurality of transistors are in electrical communication with the electro-optic medium to switch localized regions of the electro-optic medium between states.

2. The electro-optical device according to claim 1, wherein The plurality of transistors form a plurality of transistor arrays arranged in rows and columns.

3. The electro-optical device according to claim 2, wherein: Each transistor array defines a hexagonal shape having six sides, and the plurality of transistors in each transistor array includes outer transistors and central transistors, each of the outer transistors being located at a point where two sides of the hexagonal shape connect, and the central transistor being located between the outer transistors.

4. The electro-optical device according to claim 2, wherein: The plurality of transistor arrays are staggered along the rows and uniformly aligned along the columns.

5. The electro-optical device according to claim 2, wherein: The plurality of transistor arrays are staggered along the columns and uniformly aligned along the rows.

6. The electro-optical device according to claim 2, wherein: A plurality of operating traces extend between the transistor array and provide power to each of the plurality of transistors.

7. The electro-optical device according to claim 6, wherein: The plurality of operating traces extend in parallel lines.

8. The electro-optical device according to claim 7, wherein: The parallel lines are diagonal to the rows and the columns.

9. The electro-optical device according to claim 6, wherein: The plurality of operating traces follow a perimeter of the transistor array along one of the rows and the columns.

10. The electro-optical device according to claim 1, wherein Also included are a plurality of intermediate electrodes located between the first electrode and the second electrode and in contact with the electro-optical medium.

11. The electro-optical device according to claim 10, wherein: The plurality of transistors are in electrical communication with the electro-optic medium via the plurality of intermediate electrodes.

12. The electro-optical device according to claim 11, wherein: The intermediate electrodes are electrically isolated from each other.

13. The electro-optical device according to claim 10 or 11, characterized in that Each of the intermediate electrodes is in selective electrical communication with one of the first electrode and the second electrode using a switching layer.

14. An electro-optical device, characterized in that include: a first substrate; a second substrate; a first electrode coupled to the first substrate and a plurality of intermediate electrodes coupled to the second substrate; an electro-optic medium disposed between the first electrode and the plurality of intermediate electrodes and configured to be electrically activated between states; as well as A plurality of transistor arrays are in electrical communication with the electro-optical medium through the plurality of intermediate electrodes to switch local regions of the electro-optical medium between states.

15. The electro-optical device according to claim 14, wherein: Also included is a second electrode disposed between the second substrate and the plurality of intermediate electrodes.

16. The electro-optical device according to claim 15, wherein: Each of the intermediate electrodes defines a hexagonal shape having six sides.

17. The electro-optical device according to claim 16, wherein: Each of the intermediate electrodes is arranged in a row and a column, and one of the rows and the columns is staggered.

18. The electro-optical device according to any one of claims 14 to 17, characterized in that Each of the plurality of transistor arrays includes a center transistor centrally connected to a different one of the middle electrodes.

19. An electro-optical device, characterized in that include: a first substrate; a second substrate; an electro-optic medium disposed between the first substrate and the second substrate and configured to be electrically activated between states; as well as A plurality of transistors are in electrical communication with the electro-optic medium for switching localized regions of the electro-optic medium between states, the plurality of transistors being arranged in a hexagonal grid.

20. The electro-optical device according to claim 19, wherein A plurality of operating traces extend between each of the transistors and a control system for individually providing power to each transistor.

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