Adsorption film for silicon carbide chemical mechanical grinding and polishing head

Abstract

The utility model provides an adsorption film for a silicon carbide chemical mechanical grinding and polishing head. The adsorption film for the silicon carbide chemical mechanical grinding and polishing head comprises a bottom surface, an outer side wall and sealing rib positions, the outer side wall is arranged at the maximum diameter of the bottom surface; the number of the sealing rib positions is three. The sealing rib positions are arranged on the bottom face, and four cavities are formed by the adjacent sealing rib positions and the outer side wall. According to the adsorption film for the silicon carbide chemical mechanical grinding and polishing head, the pressure and the grinding rate of the surface of silicon carbide can be more accurately controlled, and it is guaranteed that a silicon carbide sheet has the excellent polishing effect.

Description

Technical Field

[0001] The utility model relates to the technical field of chemical mechanical grinding, in particular to an adsorption film used for a silicon carbide chemical mechanical grinding and polishing head. Background Art

[0002] Silicon carbide is relatively hard, approaching that of natural diamond. During chemical mechanical polishing, silicon carbide wafers experience insufficient pressure distribution at the edges, resulting in insufficient edge grinding rates. Excessive grinding pressure can lead to over-grinding of other areas.

[0003] CN117283449A discloses an adsorption film, a polishing head, and a chemical mechanical polishing apparatus. The adsorption film comprises a first surface and a second surface facing each other. The first surface of the adsorption film has a plurality of grooves arranged in a honeycomb pattern. Each groove is non-circular. When the adsorption film is applied to a wafer surface, it can effectively control the flatness of the wafer surface, reduce surface defects, and improve process stability.

[0004] CN214418504U discloses an adsorption film for mechanical chemical grinding, which is a concave circular structure; a first annular fold, a second annular fold, a first annular recess and a second recess are provided on the bottom surface of the concave circular structure; a first transverse portion, a second transverse portion and a boss are provided on the side surface of the concave structure from the top to the bottom end; the first annular fold includes a first annular vertical portion provided perpendicular to the bottom surface and a first annular horizontal portion connected to the first vertical portion, and the first annular horizontal portion is parallel to the bottom surface; the first annular recess is a tapered structure; and the second recess is a tapered structure.

[0005] CN208663469U discloses a polishing head and chemical mechanical polishing device. The polishing head comprises a main body, an adsorption membrane and a retaining ring, both located on the side of the main body facing the polishing pad, with a gap between the retaining ring and the adsorption membrane. The main body also comprises a pipe embedded in the main body. The surface of the main body facing the adsorption membrane has at least one opening, which is connected to the pipe. Cleaning fluid is ejected from the opening through the pipe to clean any polishing fluid remaining in the gap. This avoids scratches on wafers caused by polishing fluid crystals falling onto the polishing pad surface, thereby improving the quality of chemical mechanical polishing.

[0006] CN221560920U discloses a hole adsorption film device for semiconductor grinding equipment, which includes an upper shell, a bottom ring, a balance plate, a vacuum tube and a silicone adsorption film. The vacuum tube is connected to the balance plate and an air hole is opened on the vacuum tube. The balance plate is provided with an adsorption hole. The side wall of the balance plate is provided with a flange, an elastic support pad is attached to the flange, a lining ring is provided on the outside of the balance plate, the silicone adsorption film cover is provided at the bottom of the balance plate, and its edge passes through between the balance plate and the lining ring. The edge of the silicone adsorption film is provided in a convex ring. An upper annular groove is provided on the upper shell, and a lower annular groove is provided on the bottom ring. The upper shell and the bottom ring are connected by a circle of 12 bolts. The convex ring is clamped between the upper annular groove and the lower annular groove. The vacuum tube is connected and passes through the top of the upper shell. The vacuum tube is externally connected to an exhaust device.

[0007] However, the above-mentioned adsorption film still has problems such as the size of the sealing rib being insufficient from the outer edge, resulting in insufficient pressure control on the outer silicon carbide sheet. Utility Model Content

[0008] In view of the problems existing in the prior art, the utility model provides an adsorption film for a silicon carbide chemical mechanical grinding and polishing head. By rationally designing the position of the sealing ribs, an adsorption film with four chambers is formed, which ensures that the grinding rate at the edge of the silicon carbide wafer is consistent with that in the center, thereby improving the polishing effect of the silicon carbide wafer.

[0009] To achieve this purpose, the present invention adopts the following technical solutions:

[0010] The utility model provides an adsorption film for a silicon carbide chemical mechanical grinding and polishing head, wherein the adsorption film for the silicon carbide chemical mechanical grinding and polishing head comprises a bottom surface, an outer side wall and a sealing rib; the outer side wall is arranged at the maximum diameter of the bottom surface; the number of the sealing ribs is 3; the sealing ribs are arranged on the bottom surface, and adjacent sealing ribs and the outer side wall form 4 chambers.

[0011] The adsorption membrane of the silicon carbide chemical mechanical grinding and polishing head described in this utility model is divided into four chambers by sealing ribs. During use, the chambers are inflated, causing the bottom surface to expand evenly, thereby applying downward pressure to the silicon carbide wafer. This precisely controls the polishing rate at the edge of the silicon carbide wafer to be consistent with the polishing rate at the center during chemical mechanical grinding and polishing, achieving efficient grinding of the silicon carbide wafer. The adsorption membrane in this utility model can be 6 inches in diameter and is suitable for chemical mechanical grinding and polishing of silicon carbide wafers with a diameter of 150 mm.

[0012] The edge effect is significant when grinding silicon carbide wafers. Excessively large corner radius can cause vertical pressure to be distributed laterally, leading to problems with machining and over-grinding at right angles. The adsorption membrane used in the silicon carbide chemical mechanical polishing head of this utility model has an R angle of R0.3 to R1.5 on the bottom edge, resolving the problem of existing adsorption membranes with large bottom corner radius and insufficient pressure on the edges.

[0013] Preferably, the adsorption film used for the silicon carbide chemical mechanical grinding and polishing head is a silica gel adsorption film, which can effectively adsorb the silicon carbide wafer without damaging the silicon carbide wafer.

[0014] Preferably, the thickness of the bottom surface is 0.5 to 1.5 mm, for example, it can be 0.5 mm, 0.7 mm, 0.9 mm, 1 mm, 1.2 mm, 1.4 mm or 1.5 mm, etc., but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0015] Preferably, the outer side wall and the sealing rib are at the same height.

[0016] Preferably, the outer side wall and the sealing rib have the same shape, both comprising an annular vertical portion and an annular horizontal portion.

[0017] The present invention does not impose any specific restrictions on whether the annular horizontal portion of the outer side wall and the sealing rib faces the center of the circle or the outside, and can be matched with the adsorption membrane assembly component according to actual needs.

[0018] Preferably, the height of the annular vertical portion is 0.5 to 20 mm, for example, it can be 0.5 mm, 1 mm, 2 mm, 5 mm, 10 mm, 15 mm or 20 mm, etc., but is not limited to the listed values, and other unlisted values ​​within this numerical range are also applicable.

[0019] In the present invention, the height of the annular vertical portion is preferably 0.5 to 20 mm. This allows the adsorption film to effectively absorb and pressurize the silicon carbide wafer during chemical mechanical polishing. If the height of the annular vertical portion is too small or too large, the adsorption film's ability to absorb the silicon carbide wafer will be reduced, thereby affecting the polishing effect of the silicon carbide wafer.

[0020] Preferably, the thickness of the outer wall is 0.5 to 2 mm, for example, it can be 0.5 mm, 0.6 mm, 0.8 mm, 1 mm, 1.3 mm, 1.5 mm or 2 mm, etc., but it is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0021] The utility model preferably has a thickness of the outer side wall of 0.5 to 2 mm, which solves the problem that the existing adsorption membrane side wall is not thick enough, resulting in a partial lateral pressure loss of the adsorption membrane during inflation.

[0022] Preferably, from the outside to the inside of the bottom surface are respectively the first sealing rib, the second sealing rib and the third sealing rib; the outer side wall and the first sealing rib form a first chamber.

[0023] Preferably, the diameter of the first chamber is 115 mm to 132 mm, for example, it can be 115 mm, 118 mm, 120 mm, 125 mm, 127 mm, 130 mm or 132 mm, etc., but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0024] Preferably, the first sealing rib and the second sealing rib form a second chamber.

[0025] Preferably, the diameter of the second chamber is 78 mm to 114 mm, for example, it can be 78 mm, 80 mm, 90 mm, 100 mm, 105 mm, 110 mm or 114 mm, etc., but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0026] Preferably, the second sealing rib and the third sealing rib form a third chamber.

[0027] Preferably, the diameter of the third chamber is 39 mm to 77 mm, for example, it can be 39 mm, 40 mm, 50 mm, 60 mm, 70 mm, 75 mm or 77 mm, etc., but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0028] Preferably, the third sealing rib forms a fourth chamber.

[0029] Preferably, the diameter of the fourth chamber is 1 mm to 38 mm, for example, it can be 1 mm, 3 mm, 5 mm, 10 mm, 20 mm, 30 mm or 38 mm, etc., but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0030] The method for using the adsorption film for a silicon carbide chemical mechanical grinding and polishing head provided by the utility model includes:

[0031] (1) installing the adsorption film for the silicon carbide chemical mechanical polishing head onto the polishing head to form an empty cavity inside;

[0032] (2) The cavity is inflated, the bottom surface expands evenly, and pressure is applied downward to the silicon carbide wafer.

[0033] Compared with the prior art, the present invention has at least the following beneficial effects:

[0034] The adsorption film for the silicon carbide chemical mechanical grinding and polishing head provided by the utility model has four chambers of specific sizes, which can more accurately control the pressure and grinding rate on the surface of the silicon carbide wafer, thereby improving the polishing effect of the silicon carbide wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 This is a cross-sectional view of an adsorption film for a silicon carbide chemical mechanical grinding and polishing head provided in Example 1 of the present utility model.

[0036] In the figure: 1-sealing rib; 2-bottom surface; 3-outer side wall; 4-first chamber; 5-second chamber; 6-third chamber; 7-fourth chamber. DETAILED DESCRIPTION

[0037] The technical solution of the present invention will be further described below with reference to the accompanying drawings and through specific implementation methods.

[0038] The following is a further detailed description of the present invention. However, the following examples are merely simplified examples of the present invention and do not represent or limit the scope of protection of the present invention. The scope of protection of the present invention shall be subject to the claims.

[0039] It should be understood that, in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, features defined as "first", "second", etc. may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0040] Example 1

[0041] This embodiment provides an adsorption film for a silicon carbide chemical mechanical grinding and polishing head, and its schematic diagram is shown as follows: Figure 1 shown.

[0042] The adsorption film for the silicon carbide chemical mechanical grinding and polishing head includes a bottom surface 2, an outer wall 3 and a sealing rib 1; the outer wall 3 is arranged at the maximum diameter of the bottom surface 2; the number of the sealing ribs 1 is 3; the sealing ribs 1 are arranged on the bottom surface 2, and adjacent sealing ribs 1 and outer wall 3 form 4 chambers.

[0043] The adsorption film used for the silicon carbide chemical mechanical grinding and polishing head is a silica gel adsorption film.

[0044] The thickness of the bottom surface 2 is 1 mm.

[0045] The outer side wall 3 and the sealing rib 1 have the same height.

[0046] The outer side wall 3 and the sealing rib 1 have the same shape, both including an annular vertical portion and an annular horizontal portion; the height of the annular vertical portion is 10 mm.

[0047] The thickness of the outer wall 3 is 0.8 mm.

[0048] From the outside to the inside of the bottom surface 2 are the first sealing rib, the second sealing rib and the third sealing rib respectively; the outer wall and the first sealing rib form a first chamber 4; the diameter of the first chamber 4 is 120 mm.

[0049] The first sealing rib and the second sealing rib form a second chamber 5; the diameter of the second chamber 5 is 90 mm.

[0050] The second sealing rib and the third sealing rib form a third chamber 6; the diameter of the third chamber 6 is 50 mm.

[0051] The third sealing rib forms a fourth chamber 7; the diameter of the fourth chamber 7 is 20 mm.

[0052] Example 2

[0053] This embodiment provides an adsorption film for a silicon carbide chemical mechanical grinding and polishing head, wherein the adsorption film for a silicon carbide chemical mechanical grinding and polishing head includes a bottom surface, an outer side wall, and sealing ribs; the outer side wall is arranged at the maximum diameter of the bottom surface; the number of the sealing ribs is 3; the sealing ribs are arranged on the bottom surface, and adjacent sealing ribs and the outer side wall form 4 chambers.

[0054] The adsorption film used for the silicon carbide chemical mechanical grinding and polishing head is a silica gel adsorption film.

[0055] The thickness of the bottom surface is 0.5 mm.

[0056] The outer side wall and the sealing rib have the same height.

[0057] The outer side wall and the sealing rib have the same shape, both including an annular vertical portion and an annular horizontal portion; the height of the annular vertical portion is 20 mm.

[0058] The thickness of the outer side wall is 0.5 mm.

[0059] From the outside to the inside of the bottom surface, there are the first sealing rib, the second sealing rib and the third sealing rib respectively; the outer wall and the first sealing rib form a first cavity; the diameter of the first cavity is 132 mm.

[0060] The first sealing rib and the second sealing rib form a second chamber; the diameter of the second chamber is 114 mm.

[0061] The second sealing rib and the third sealing rib form a third chamber; the diameter of the third chamber is 77 mm.

[0062] The third sealing rib forms a fourth chamber; the diameter of the fourth chamber is 38 mm.

[0063] Example 3

[0064] This embodiment provides an adsorption film for a silicon carbide chemical mechanical grinding and polishing head, wherein the adsorption film for a silicon carbide chemical mechanical grinding and polishing head includes a bottom surface, an outer side wall, and sealing ribs; the outer side wall is arranged at the maximum diameter of the bottom surface; the number of the sealing ribs is 3; the sealing ribs are arranged on the bottom surface, and adjacent sealing ribs and the outer side wall form 4 chambers.

[0065] The adsorption film used for the silicon carbide chemical mechanical grinding and polishing head is a silica gel adsorption film.

[0066] The thickness of the bottom surface is 1.5 mm.

[0067] The outer side wall and the sealing rib have the same height.

[0068] The outer side wall and the sealing rib have the same shape, both including an annular vertical portion and an annular horizontal portion; the height of the annular vertical portion is 0.5 mm.

[0069] The thickness of the outer side wall is 2 mm.

[0070] From the outside to the inside of the bottom surface, there are the first sealing rib, the second sealing rib and the third sealing rib respectively; the outer wall and the first sealing rib form a first cavity; the diameter of the first cavity is 115mm.

[0071] The first sealing rib and the second sealing rib form a second chamber; the diameter of the second chamber is 114 mm.

[0072] The second sealing rib and the third sealing rib form a third chamber; the diameter of the third chamber is 39mm.

[0073] The third sealing rib forms a fourth cavity; the diameter of the fourth cavity is 1 mm.

[0074] Example 4

[0075] This embodiment provides an adsorption film for a silicon carbide chemical mechanical grinding and polishing head. The adsorption film for a silicon carbide chemical mechanical grinding and polishing head is the same as that of embodiment 1 except that the height of the annular vertical portion is 0.1 mm.

[0076] Example 5

[0077] This embodiment provides an adsorption film for a silicon carbide chemical mechanical grinding and polishing head. The adsorption film for a silicon carbide chemical mechanical grinding and polishing head is the same as that of Example 1 except that the height of the annular vertical portion is 25 mm.

[0078] From Example 1 and Examples 4 to 5, it can be seen that the height of the annular vertical portion in Example 4 is smaller, while the height of the annular vertical portion in Example 5 is larger, both of which will lead to a worse adsorption effect of the adsorption film on the silicon carbide wafer, thereby affecting the polishing effect of the silicon carbide wafer.

[0079] The applicant declares that while the above-described embodiments illustrate the detailed structural features of the present invention, the present invention is not limited to these detailed structural features, nor does it imply that the present invention must rely on these detailed structural features in order to be implemented. Persons skilled in the art should understand that any improvements to the present invention, equivalent replacements for selected components, additions of auxiliary components, and selection of specific methods, etc., fall within the scope of protection and disclosure of the present invention.

[0080] The preferred embodiments of the present invention are described in detail above. However, the present invention is not limited to the specific details of the above embodiments. Within the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the scope of protection of the present invention.

Claims

1. An adsorption film for a silicon carbide chemical mechanical grinding and polishing head, characterized in that: The adsorption film for the silicon carbide chemical mechanical grinding and polishing head includes a bottom surface, an outer side wall and a sealing rib; the outer side wall is arranged at the maximum diameter of the bottom surface; the number of the sealing ribs is 3; the sealing ribs are arranged on the bottom surface, and adjacent sealing ribs and the outer side wall form 4 chambers.

2. The adsorption film for a silicon carbide chemical mechanical grinding and polishing head according to claim 1, characterized in that: The adsorption film used for the silicon carbide chemical mechanical grinding and polishing head is a silica gel adsorption film.

3. The adsorption film for a silicon carbide chemical mechanical grinding and polishing head according to claim 1, characterized in that: The thickness of the bottom surface is 0.5-1.5 mm.

4. The adsorption film for a silicon carbide chemical mechanical grinding and polishing head according to claim 1, characterized in that: The outer side wall and the sealing rib have the same height.

5. The adsorption film for a silicon carbide chemical mechanical grinding and polishing head according to claim 1, characterized in that: The outer side wall and the sealing rib have the same shape, and both include an annular vertical portion and an annular horizontal portion; The height of the annular vertical portion is 0.5 to 20 mm.

6. The adsorption film for a silicon carbide chemical mechanical grinding and polishing head according to claim 1, characterized in that: The thickness of the outer wall is 0.5 to 2 mm.

7. The adsorption film for a silicon carbide chemical mechanical grinding and polishing head according to claim 1, characterized in that: From the outside to the inside of the bottom surface, there are respectively the first sealing rib, the second sealing rib and the third sealing rib; the outer wall and the first sealing rib form a first cavity; The diameter of the first chamber is 115 mm to 132 mm.

8. The adsorption film for a silicon carbide chemical mechanical grinding and polishing head according to claim 7, characterized in that: The first sealing rib position and the second sealing rib position form a second chamber; The diameter of the second chamber is 78 mm to 114 mm.

9. The adsorption film for a silicon carbide chemical mechanical grinding and polishing head according to claim 7, characterized in that: The second sealing rib position and the third sealing rib position form a third chamber; The diameter of the third chamber is 39 mm to 77 mm.

10. The adsorption film for a silicon carbide chemical mechanical grinding and polishing head according to claim 7, characterized in that: The third sealing rib forms a fourth chamber; The diameter of the fourth chamber is 1 mm to 38 mm.

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