Gas conveying device and process equipment of semiconductor device

Abstract

The utility model discloses a gas conveying device and process equipment of a semiconductor device. The device comprises a first group of gas paths, the gas inlet end of which is connected with a carrier gas source and a TEOS (tetraethyl orthosilicate) source and is used for transmitting a first group of gas comprising carrier gas and TEOS; the gas inlet end of the second group of gas paths is connected with a supplementary gas source, and a second group of gas including supplementary gas is transmitted; the gas inlet end of the third group of gas paths is connected with the ozone source and transmits a third group of gas containing ozone; the gas inlet ends of the gas mixing parts are respectively connected with the gas outlet ends of the first group of gas paths, the second group of gas paths and the third group of gas paths, so that the first group of gas, the second group of gas and the third group of gas in equal proportion are obtained and mixed, and the mixed gas is averagely distributed to the corresponding treatment stations in the reaction cavity from the gas outlet ends of the gas mixing parts for a deposition process. According to the utility model, the distribution uniformity of a plurality of groups of process gases can be improved, so that the film thickness difference of each treatment station is reduced, the condensation temperature of TEOS (tetraethyl orthosilicate) can be improved, and the film particle pollution is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor processing, in particular to a gas conveying device and a process equipment for semiconductor devices. Background Art

[0002] In the thin film deposition process, High Aspect Ratio Process (HARP) refers to a deposition process in which a thin film is deposited on the wafer surface by mixing the process gases tetraethyl orthosilicate (TEOS) and ozone (O3) in a high-temperature environment of approximately 540-550°C and a sub-atmospheric pressure of 600 torr in a chamber.

[0003] Due to the HARP process requirements, the 600 torr high-pressure environment within the chamber requires approximately 70 SLM of gas to maintain. However, the existing carrier gas, containing the primary reactant TEOS and the secondary reactant ozone, can provide a maximum of 45 SLM of total gas. The remainder can be replenished with non-reactive make-up gas. When mixed, TEOS and ozone decompose above 80°C, reducing the deposition rate. However, temperatures too low can cause TEOS to condense, resulting in particle contamination.

[0004] In the prior art, heated carrier gas and TEOS (approximately 21 SLM total) are grouped as the first gas group, and unheated ozone and makeup gas (approximately 49 SLM total) are grouped as the second gas group. The two gas groups are then mixed in a gas mixer and evenly distributed to the two processing stations within the chamber. However, a common problem with such gas delivery devices is that, during mixing in the gas mixer, the ratios of the first and second gas groups are uneven (e.g., 21 SLM and 49 SLM), resulting in uneven distribution of the two gas groups entering the two processing stations in the chamber, which can easily lead to a film thickness difference of up to 10% between the two stations. Although the film thickness difference between the two stations can be reduced through strict hardware tolerance control and process gap value adjustment, this method of eliminating the film thickness difference by adjusting the gas ratio in the two processing stations through metering valves requires a significant increase in process adjustment time, prolongs machine restart time, and thus affects production efficiency.

[0005] In order to solve the above-mentioned problems existing in the existing technology, this field urgently needs a gas delivery technology that can improve the uniformity of the distribution of multiple groups of process gases in the high aspect ratio deposition process, thereby reducing the film thickness difference between each processing station, shortening the process adjustment time, and improving production efficiency. At the same time, it can also increase the condensation temperature of TEOS, improve thin film particle contamination, and improve product quality. Utility Model Content

[0006] The following is a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceivable aspects and is neither intended to identify key or critical elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that will be provided later.

[0007] In order to overcome the above-mentioned defects of the prior art, the utility model provides a gas delivery device and a process equipment for semiconductor devices, which can improve the uniformity of the distribution of multiple groups of process gases in the deposition process of high aspect ratio, thereby reducing the film thickness difference of each processing station, shortening the process adjustment time, and improving production efficiency. At the same time, it can also increase the condensation temperature of TEOS, improve thin film particle contamination, and improve product quality.

[0008] Specifically, the above-mentioned gas delivery device provided according to the first aspect of the present invention includes: a first group of gas paths, whose gas inlet ends are connected to a carrier gas source and a TEOS source, for transmitting a first group of gases including carrier gas and TEOS; a second group of gas paths, whose gas inlet ends are connected to a supplementary gas source, for transmitting a second group of gases including supplementary gas; a third group of gas paths, whose gas inlet ends are connected to an ozone source, for transmitting a third group of gases including ozone; and a plurality of gas mixing sections, whose gas inlet ends are respectively connected to the first group of gas paths, the second group of gas paths, and the gas outlet ends of the third group of gas paths, so as to obtain equal proportions of the first group of gases, the second group of gases and the third group of gases and mix them, and evenly distribute the mixed gas from the gas outlet ends of each of the gas mixing sections to the corresponding processing stations in the reaction chamber to carry out the deposition process.

[0009] Furthermore, in some embodiments of the present invention, the gas delivery device further includes: a first heating unit, provided in the second group of gas paths, so as to heat the supplementary gas to a preset temperature before entering each of the gas mixing units.

[0010] Furthermore, in some embodiments of the present invention, the supplementary gas includes nitrogen.

[0011] Furthermore, in some embodiments of the present invention, the gas mixing portion includes a gas mixer, the gas inlet end of the gas mixer includes a first pipeline, a second pipeline and a third pipeline spaced apart from each other, so as to respectively introduce the first group of gases, the second group of gases and the third group of gases, and a gas mixing chamber is provided below the gas inlet end to mix the three groups of gases, and the gas outlet end of the gas mixer is provided at the lower end of the gas mixing chamber.

[0012] Furthermore, in some embodiments of the present invention, a laminated partition is provided on the outer side of the upper end of the mixing chamber, and a plurality of air inlet holes are evenly distributed on the cavity wall of the mixing chamber above or below each of the laminated partitions, so as to isolate the first group of gases, the second group of gases and the third group of gases during air intake, and allow each group of gases to enter the mixing chamber evenly in the circumferential direction.

[0013] Furthermore, in some embodiments of the present invention, the gas mixing section also includes a gas mixing block so that the gas mixer is fixed in the gas mixing block, and a gas mixing channel is provided inside the gas mixing block. The gas outlet end of the gas mixer inserted into the gas mixing block is connected to the gas mixing channel to transmit the mixed gas of the first group of gases, the second group of gases and the third group of gases to each processing station.

[0014] Furthermore, in some embodiments of the present invention, the gas outlet end of the gas mixer is a plurality of gas outlet holes arranged in a circumferential array, so that the mixed gas can flow into the gas mixing channel uniformly in the circumferential direction.

[0015] In addition, the process equipment of the above-mentioned semiconductor device provided according to the second aspect of the present invention includes: a reaction chamber, which includes several processing stations inside for holding wafers for performing a deposition process; and the above-mentioned gas delivery device provided by the first aspect of the present invention, connected to the reaction chamber, for mixing a first group of gases including carrier gas and TEOS, a second group of gases including supplementary gas, and a third group of gases including ozone in equal proportions, and evenly distributing the mixed gas to each of the processing stations to perform the deposition process. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or characteristics may have the same or similar reference numerals.

[0017] Figure 1 A schematic structural diagram of a semiconductor device process equipment provided according to some embodiments of the present utility model is shown;

[0018] Figure 2 A schematic structural diagram of a gas delivery device according to some embodiments of the present invention is shown;

[0019] Figure 3 shows a TEOS partial pressure-temperature curve diagram provided according to some embodiments of the present utility model;

[0020] Figure 4 A schematic structural diagram of a gas mixing unit according to some embodiments of the present invention is shown;

[0021] Figure 5 A schematic structural diagram of a gas mixer provided according to some embodiments of the present utility model is shown;

[0022] Figure 6 A schematic diagram showing a film thickness marathon of two processing stations using a gas delivery device without adjusting a metering valve according to some embodiments of the present invention is shown;

[0023] Figure 7 A schematic diagram of a particle marathon using two processing stations of a gas delivery device according to some embodiments of the present invention is shown;

[0024] Figure 8 A schematic diagram of a gas delivery path into a reaction chamber according to some embodiments of the present invention is shown;

[0025] Figure 9 A flowchart showing a process method for a semiconductor device according to some embodiments of the present invention is shown; and

[0026] Figure 10 A film thickness difference curve of two processing stations in a replicated machine without adjusting the metering valve in a reaction chamber according to some embodiments of the present invention is shown.

[0027] Reference numerals:

[0028] 100 Process equipment for semiconductor devices;

[0029] 110 reaction chamber;

[0030] 111 heating plate;

[0031] 112 sprinkler heads;

[0032] 113 exhaust channel;

[0033] 120 treatment stations;

[0034] 200 gas delivery device;

[0035] 210 The first group of gas lines;

[0036] 211 carrier gas source;

[0037] 212 TEOS source;

[0038] 220 The second group of gas lines;

[0039] 221 Supplementary gas source;

[0040] 230 The third group of gas lines;

[0041] 231 Ozone sources;

[0042] 240 carburettors;

[0043] 250 mixing unit;

[0044] 251 Gas mixer;

[0045] 252 top cover;

[0046] 310 first pipeline;

[0047] 320 Second pipeline;

[0048] 330 third pipeline;

[0049] 340 gas mixing chamber;

[0050] 341 outlet;

[0051] 350 gas mixing block;

[0052] 351 gas mixing channel;

[0053] 410 Upper laminated partition;

[0054] 420 lower laminated bulkhead;

[0055] 430 air intake;

[0056] A. The first group of gases;

[0057] B. The second group of gases;

[0058] C Group III gases; and

[0059] Steps S910~S920. DETAILED DESCRIPTION

[0060] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and functions of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this utility model are limited to this implementation. On the contrary, the purpose of introducing the utility model in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide an in-depth understanding of the present invention, the following description will contain many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0061] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0062] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood to refer to the orientations depicted in that section and the accompanying drawings. These relative terms are used solely for convenience of description and do not necessarily imply that the devices described herein must be manufactured or operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0063] It is understood that although the terms "first," "second," "third," etc. may be used herein to describe various components, regions, layers, and / or portions, these components, regions, layers, and / or portions should not be limited by these terms, and these terms are merely used to distinguish different components, regions, layers, and / or portions. Thus, a first component, region, layer, and / or portion discussed below may be referred to as a second component, region, layer, and / or portion without departing from some embodiments of the present invention.

[0064] As described above, in the prior art, heated carrier gas and TEOS (approximately 21 SLM total) are combined as a first gas group, and unheated ozone and makeup gas (approximately 49 SLM total) are combined as a second gas group. The two gas groups are then mixed in a gas mixer and evenly distributed to the two processing stations within the chamber. However, a common problem with such gas delivery devices is that, during mixing in the gas mixer, the ratios of the first and second gas groups are uneven (e.g., 21 SLM and 49 SLM), resulting in uneven distribution of the two gas groups entering the two processing stations in the chamber, which can easily lead to a film thickness difference of up to 10% between the two stations. Although the film thickness difference between the two stations can be reduced through strict hardware tolerance control and process gap value adjustment, this method of eliminating the film thickness difference by adjusting the gas ratios in the two processing stations through metering valves requires a significant increase in process setup time, extending machine restart time, and thus affecting production efficiency.

[0065] In order to solve the above-mentioned problems existing in the prior art, the utility model provides a gas delivery device and a process equipment for semiconductor devices, which can improve the uniformity of the distribution of multiple groups of process gases in the deposition process of high aspect ratio, thereby reducing the film thickness difference of each processing station, shortening the process adjustment time, and improving production efficiency. At the same time, it can also increase the condensation temperature of TEOS, improve thin film particle contamination, and improve product quality.

[0066] In some non-limiting embodiments, the gas delivery device provided in the first aspect of the present invention may be configured in the process equipment of the semiconductor device provided in the second aspect of the present invention.

[0067] The following describes the operating principles of the aforementioned gas delivery device in conjunction with embodiments of certain semiconductor device process equipment. Those skilled in the art will appreciate that these embodiments of semiconductor device process equipment are merely non-limiting implementations of the present invention, intended to clearly demonstrate the main concepts of the present invention and provide specific solutions that facilitate implementation by the public. They are not intended to limit the full operating modes or functions of the gas delivery device. Similarly, the gas delivery device is merely a non-limiting implementation of the present invention and does not constitute a limitation on the various configurations within these semiconductor device process equipment.

[0068] Please see Figure 1 , Figure 1 A schematic structural diagram of a semiconductor device process equipment provided according to some embodiments of the present invention is shown.

[0069] like Figure 1 As shown, in some embodiments of the present invention, the semiconductor device processing equipment 100 can be primarily used for high-aspect ratio deposition processes. In a high-temperature environment of approximately 540-550°C in a chamber and at a sub-atmospheric pressure of 600 Torr, a process gas of tetraethyl orthosilicate (TEOS) is mixed with ozone (O3) to cause chemical vapor deposition, thereby depositing a silicon dioxide film on the wafer surface. As an alternative to existing low-pressure or atmospheric pressure chemical vapor deposition processes, for devices with dimensions below 0.25μm, TEOS / ozone films deposited at high temperatures (>550°C) can demonstrate excellent quality in void-free trench filling.

[0070] In this embodiment, the process equipment 100 for a semiconductor device may include a reaction chamber 110, which may include a plurality of processing stations 120 therein for holding wafers for performing a deposition process. The reaction chamber 110 including multiple processing stations 120 is capable of depositing multiple wafers simultaneously. In addition, the process equipment 100 for a semiconductor device may further include a gas delivery device, which may be connected to the reaction chamber 110 and is used to mix a first group of gases including a carrier gas and TEOS, a second group of gases including a supplemental gas, and a third group of gases including ozone in equal proportions, and evenly distribute the mixed gas to each processing station 120 to perform the above-mentioned silicon dioxide thin film deposition process.

[0071] Furthermore, please combine Figure 2 Common understanding, Figure 2 A schematic structural diagram of a gas delivery device provided according to some embodiments of the present utility model is shown.

[0072] like Figure 2 As shown, in some embodiments of the present invention, a gas delivery device 200 may include a first group of gas circuits 210, a second group of gas circuits 220, a third group of gas circuits 230, and a plurality of gas mixing units 250. Specifically, the gas inlet end of the first group of gas circuits 210 may be connected to a carrier gas source 211 and a TEOS source 212 for delivering a first group of gases A comprising carrier gas and TEOS. The gas inlet end of the second group of gas circuits 220 may be connected to a supplementary gas source 221 for delivering a second group of gases B comprising supplementary gas. The gas inlet end of the third group of gas circuits 230 may be connected to an ozone source 231 for delivering a third group of gases C comprising ozone. The gas inlet ends of each gas mixing section 250 can be respectively connected to the gas outlet ends of the first group of gas paths 210, the second group of gas paths 220, and the third group of gas paths 230 to obtain equal proportions of the first group of gases A, the second group of gases B, and the third group of gases C and mix them, and evenly distribute the mixed gases from the gas outlet ends of each gas mixing section 250 to the corresponding processing stations 120 in the reaction chamber 110 to perform the deposition process.

[0073] Optionally, the first group of gas paths 210 may further include a vaporizer 240 (mixing vaporizer) for evaporating the liquid TEOS in storage into a gaseous state, so that the TEOS can be decomposed in a high temperature environment of 540-550°C and under a subnormal pressure of 600 Torr to form a silicon dioxide film on the wafer surface. Figure 2 As shown, the dotted lines in the first group of gas paths 210 represent the gas paths through which the heated gaseous TEOS flows.

[0074] Furthermore, based on the aforementioned HARP process conditions (process high pressure of 600 torr, process gas flow rate of 70 SLM), and the maximum flow rate of vaporizer 240 being 20 SLM, if the prior art method of dividing the carrier gas and TEOS gas lines into a first group of gas lines and the make-up gas and ozone gas lines into a second group of gas lines is continued, since only a maximum of 21 SLM can flow through the first group of gas lines, and the remaining gas required to maintain the process high pressure must be supplied only through the second group of gas lines, the second group of gas lines must provide approximately 50 SLM of gas flow. In other words, the gas flow rates delivered by the prior art gas delivery device in the first group of gas lines and the second group of gas lines are significantly uneven, and this is unavoidable due to the limitations of the process conditions and the equipment requirements of the vaporizer.

[0075] Therefore, in order to solve the problem in the prior art that the uneven proportions of the two groups of gases cause uneven distribution to each processing station in the chamber, resulting in obvious differences in film thickness at each station, the present invention re-divides these process gases, dividing the carrier gas path and the TEOS gas path into a first group of gas paths 210, the supplementary gas path into a second group of gas paths 220, and the ozone path into a third group of gas paths 230. Since the supplementary gases that do not participate in the reaction are separately divided into a group of gas paths, the gas flow rate of the second group of supplementary gases B that do not participate in the reaction can be adjusted based on the gas flow rate of the first group of gases A including the carrier gas and TEOS of the first reaction source, and the gas flow rate of the third group of gases C including ozone of the second reaction source, so that the three groups of gases can be divided into two by hardware before entering each mixing section 250 (for example, Figure 1 The three gas groups are evenly distributed between the two processing stations in the chamber, ensuring that the gas flow rates of the three groups are essentially the same. This reduces the problem of uneven distribution of the reaction gases between the two stations without the need for metering valve adjustment, effectively eliminating the difference in film thickness between the two stations in the chamber. Alternatively, nitrogen, which does not participate in the reaction, can be used as the supplementary gas.

[0076] Preferably, the gas flow ratio of the first gas group A, the second gas group B, and the third gas group C, with a total process gas flow rate of 70 SLM, when entering each gas mixing section can be close to 1:1:1, for example, 1 to 1.2:1:1. Compared to the prior art, the intake ratios of the two gas groups at the intake end of each gas mixing section 250 differ significantly, which can easily lead to uneven gas distribution. However, in the present invention, the first gas group A, the second gas group B, and the third gas group C are adjusted to a ratio close to 1:1:1, which reduces crosstalk and maintains essentially the same flow rate and pressure of each gas group. This facilitates more uniform mixing after subsequent entry into the gas mixing section 250, and eliminates film thickness differences between the two stations in the chamber without requiring adjustment via a metering valve.

[0077] Furthermore, since the vaporization of liquid TEOS changes TEOS from liquid to gas, if the temperature does not reach the vaporization temperature, it will change from gas to liquid. According to the saturated vapor pressure partial pressure calculation formula, the partial pressure of gaseous TEOS can be obtained, wherein the saturated vapor pressure partial pressure calculation formula is as follows:

[0078]

[0079] Wherein, Flow (Vapor) represents the gas flow rate of TEOS, Flow (Carrier) represents the gas flow rate of carrier gas, and Downstream pressure represents the pressure in the reaction chamber.

[0080] Please refer to Figure 3 , Figure 3 The TEOS partial pressure-temperature curve diagram provided by some embodiments of the present invention is shown. After calculating the TEOS partial pressure according to the above formula, combined with Figure 3 The TEOS partial pressure-temperature curve in the figure can determine the condensation temperature of gaseous TEOS corresponding to different partial pressures. Figure 3 As shown, the temperature above the curve is safe, that is, the gaseous TEOS will not condense.

[0081] like Figure 3 As shown, when two groups of gases in the prior art (the first group of gases is carrier gas and TEOS, and the second group of gases is ozone and nitrogen) are mixed at a flow rate ratio of approximately 1:2.45, the TEOS partial pressure value obtained by the above saturated vapor pressure partial pressure calculation formula corresponds to a TEOS condensation temperature of 49 degrees. In this embodiment, when the three groups of gases enter the mixing section 250 at a flow rate ratio of approximately 1:1:1, the TEOS partial pressure value obtained by the above saturated vapor pressure partial pressure calculation formula can be greater than that of the prior art, and the corresponding TEOS condensation temperature is increased to 64 degrees. In other words, the condensation temperature of TEOS at the mixing point in this embodiment is greatly increased, thereby reducing the risk of particle contamination caused by the condensation of TEOS at the mixing point and improving the performance of film particle size (PA).

[0082] Next, see Figure 4 , Figure 4 A schematic structural diagram of a gas mixing unit provided according to some embodiments of the present utility model is shown.

[0083] like Figure 4As shown, in some embodiments of the present invention, the gas mixing unit 250 includes a gas mixer 251. The gas inlet end of the gas mixer 251 may include a first pipeline 310, a second pipeline 320, and a third pipeline 330 spaced apart from each other, which are used to respectively connect to the gas outlet end of the first group of gas circuits 210, the gas outlet end of the second group of gas circuits 220, and the gas outlet end of the third group of gas circuits 220, so as to respectively introduce the first group of gas A, the second group of gas B, and the third group of gas C. Here, the positions of the first pipeline 310, the second pipeline 320, and the third pipeline 330 corresponding to the first group of gas A, the second group of gas B, and the third group of gas C are not limited and can be adjusted according to actual pipeline requirements.

[0084] A top cover 252 is provided above the gas mixer 251 to seal the top. A mixing chamber 340 may be provided below the gas inlet of the gas mixer 251 to mix the three gas groups. Furthermore, a gas outlet 341 may be provided below the mixing chamber 340 to discharge the mixed gas.

[0085] Specifically, please combine Figure 5 Common understanding, Figure 5 A schematic structural diagram of a gas mixer provided according to some embodiments of the present utility model is shown.

[0086] like Figure 5 As shown, optionally, laminated baffles, including an upper laminated baffle 410 and a lower laminated baffle 420, may be provided on the outer side of the upper end of the gas mixing chamber 340 to isolate the first gas group A, the second gas group B, and the third gas group C during intake. Furthermore, a plurality of air inlet holes 430 (e.g., eight circular holes in a circumferential array) are evenly distributed on the wall of the gas mixing chamber 340 above the upper laminated baffle 410. This allows the first gas group A to be evenly dispersed around the wall of the gas mixing chamber 340 above the upper laminated baffle 410, facilitating circumferentially uniform entry of the first gas group A into the gas mixing chamber 340 through the air inlet holes 430. Similarly, multiple air inlet holes 430 can be evenly distributed on the wall of the mixing chamber 340 in the lower area of ​​the upper laminated partition 410 (i.e., the upper area of ​​the lower laminated partition 420), and on the wall of the mixing chamber 340 in the lower area of ​​the lower laminated partition 420, so that the second group of gases B and the third group of gases C are evenly dispersed around the wall of the mixing chamber 340 above and below the lower laminated partition 420, which is conducive to the second group of gases B and the third group of gases C entering the mixing chamber 340 evenly in the circumferential direction through the air inlet holes 430.

[0087] Please continue to return Figure 4Optionally, the gas mixing unit 250 may further include a gas mixing block 350. The gas mixer 251 may be installed in the gas mixing block 350 from top to bottom for fixation. A gas mixing channel 351 may be provided inside the gas mixing block 350, and the gas outlet end 341 of the gas mixer 251 inserted into the gas mixing block 350 may be in communication with the gas mixing channel 351, so that the mixed gas output from the gas outlet end 341 can be further fully mixed in the gas mixing channel 351, and the mixed gas including the first group of gases A, the second group of gases B, and the third group of gases C is transmitted to each processing station 120.

[0088] like Figure 5 As shown, optionally, the gas outlet end 341 of the gas mixer 251 can be a plurality of gas outlet holes arranged in a circumferential array, so that the mixed gas can be evenly output from the cavity wall of the gas mixing cavity 340 around, and thus evenly enter the gas mixing channel 351 in the circumferential direction.

[0089] In order to better reflect the effect of significantly improving the uniformity of gas distribution achieved by the gas delivery device 200 of the present invention, please combine Figure 2 Please refer to Table 1 below.

[0090] As shown in Table 1, regarding the grouping of two gas paths in a conventional gas delivery device, the supplemental gas path and the ozone path are grouped as the first gas path, the carrier gas path and the TEOS path are grouped as the second gas path, and there is no third gas path. Because the ratio of the flow rate of the first gas group in the first gas path to the flow rate of the second gas group in the second gas path inevitably differs significantly, a significant pressure difference exists between the first and second gas groups entering the two processing stations. For example, in the first test case, under test conditions with a first-to-second gas flow rate ratio of 2.45:1, the pressure difference between the first gas group entering the left and right processing stations 120 was 1.3 torr, while the pressure difference between the second gas group entering the left and right processing stations 120 was -2.8 torr.

[0091] However, combined Figure 2 As shown in Table 1, the gas delivery device 200 of the present invention includes three gas paths, and delivers the first gas group A, comprising carrier gas and TEOS, the second gas group B, comprising nitrogen, and the third gas group C, comprising ozone, in equal proportions to the gas mixing section 250 corresponding to each processing station 120. This significantly reduces the pressure difference between the three gas groups entering the two processing stations 120, improving gas distribution uniformity. For example, in Test Example 3, where the flow rate ratio of the first gas group A, the second gas group B, and the third gas group C was 1:1:1, there was no pressure difference between the first gas group A and the third gas group C entering the left and right processing stations 120, and the pressure difference of the second gas group was only 0.1 torr.

[0092] Table 1

[0093]

[0094] Therefore, as shown in Table 1 above, in the gas delivery device 200 provided by the present invention, since the uniformity of the distribution of various process gases is significantly improved, there is no need to repeatedly adjust the metering valves corresponding to each processing station 120 to adjust the gas ratio in each processing station 120, thereby eliminating the difference in film thickness, thereby shortening the machine adjustment time increased due to the mismatch of film thicknesses in multiple processing stations 120. Generally speaking, a single restart can save 5 to 6 hours.

[0095] Furthermore, in some preferred embodiments, the gas delivery device 200 may further include a first heating unit (not shown in the drawings). The first heating unit may be provided in the second group of gas paths 220 to heat the supplementary gas to a preset temperature before entering each gas mixing unit 250. Figure 2 As shown, the dotted lines of the second gas path 220 represent the heated nitrogen gas flow path. The first heating unit provided in the second gas path 220 can heat the second gas group N2, including the supplemental gas, by approximately 150°C before entering the gas mixing unit 250, compared to the prior art. This heat is then maintained during transmission. This increases the temperature of the three gases after mixing within each gas mixing unit 250 from the prior art 49°C to approximately 65°C, further reducing the risk of TEOS condensation in the mixed gas.

[0096] In the prior art, since ozone and supplemental nitrogen are grouped together, heating the nitrogen directly within this group of gas lines would cause the ozone in the same group to decompose at high temperatures. Therefore, in the prior art, the nitrogen cannot be heated before entering the mixing section 250. However, in a preferred embodiment of the present invention, since the second gas line 220 containing supplemental nitrogen is independent of the third gas line 230 containing ozone and the first gas line 210 containing carrier gas and TEOS, the nitrogen can be heated within the piping before entering the mixing section 250. Specifically, the ratio of the first gas group A (carrier gas plus TEOS), the second gas group B (nitrogen), and the third gas group C (ozone) can be adjusted to approximately 1:1:1.3, further reducing the risk of TEOS condensation in the mixing section 250. This also reduces the film thickness variation between the various processing stations 120 within the reaction chamber 110 to less than 1%, and significantly improves particle marathon (PA) performance.

[0097] Specifically, see Figure 6 , Figure 6A schematic diagram shows a film thickness marathon at two processing stations when the gas delivery device provided by some embodiments of the present invention does not adjust the metering valve. The "film thickness marathon" here can be understood as the long-term verification performance of film thickness data after continuous cumulative product runs. Figure 6 The horizontal axis is the number of verifications, and the vertical axis is the thickness.

[0098] like Figure 6 As shown, the film thickness in the two processing stations obtained by using the gas delivery device in the prior art is shown on the left side of the dividing line M. When the metering valve is not adjusted, the film thickness in the left processing station is The thickness of the film at the right processing station is about The film thickness difference between the two processing stations is obvious, about 10% to 15%. The film thickness difference to the right of the dividing line M is the film thickness in the two processing stations obtained by using the gas delivery device 200 of the present invention. When the metering valve is not adjusted, the film thickness of the left processing station and the right processing station is basically the same, stable at This shows that the film thickness difference between the two processing stations can be reduced to less than 1%.

[0099] Further, see Figure 7 , Figure 7 A schematic diagram of a particle marathon using a gas delivery device at two processing stations according to some embodiments of the present invention is shown. The term "particle marathon" herein can be understood as a long-term verification of the number of particles after a continuous cumulative run of the product. Figure 7 The horizontal axis is the number of verifications, and the vertical axis is the number of particles.

[0100] like Figure 7 As shown, the number of particles on the thin films in the two processing stations to the left of the dividing line N is obtained by using the gas delivery device in the prior art. In the left processing station, the number of particles on each wafer thin film is about 17 to 20, and in the right processing station, the number of particles on each wafer thin film is about 12 to 14. And the number of particles on the thin films in the two processing stations to the right of the dividing line N is obtained by using the gas delivery device 200 in the present invention. The number of particles on each wafer thin film in the left processing station and the right processing station is basically maintained in the single digit, and the difference between the number of particles on the thin films generated by the two processing stations is also reduced, which reflects that the particle marathon (PA marathon) performance in the two processing stations has been significantly improved.

[0101] Next, you can refer to Figure 8 , Figure 8 A schematic diagram of a gas delivery path into a reaction chamber provided according to some embodiments of the present invention is shown.

[0102] Combine Figure 1 、 Figure 2 and Figure 8 As shown, the gas delivery device 200 distributes three groups of gases, namely, a first group of gases A including carrier gas and TEOS, a second group of gases B including nitrogen, and a third group of gases C including ozone, to each gas mixing unit 250 in equal proportions. Figure 6 The reaction chamber 110 in the embodiment may include two processing stations 120. Therefore, the total gas flow of the first gas group A, the total gas flow of the second gas group B, and the total gas flow of the third gas group C are each divided into two and enter their respective mixing sections 250 for mixing. In other words, the gas flow of the first gas group A, the second gas group B, and the third gas group C entering each mixing section 250 is 1 / 2 of their corresponding total flow, that is, also in a 1:1:1 ratio. The mixed gas evenly mixed in each mixing section 250 can be passed to the shower head 112 (SHD) above each processing station 120 in the reaction chamber 110, and then sprayed onto the surface of the wafer supported by the heating plate 111 through the shower head 112 to perform the HARP process. In addition, after the HARP process is completed, the remaining process gas can be extracted through the exhaust channel in each processing station 120.

[0103] Next, see Figure 9 , Figure 9 The flowchart of a process method for a semiconductor device according to some embodiments of the present invention is shown.

[0104] like Figure 9 As shown, in some embodiments of the present invention, when performing a high aspect ratio deposition process, the process method of the semiconductor device may include the following steps, and first S910 may be performed: dividing the carrier gas and TEOS into a first group of gases, dividing the supplementary gas into a second group of gases, and dividing the ozone into a third group of gases.

[0105] Specifically, it can be combined Figure 2 It is commonly understood that the process gases required for the HARP process, including carrier gas, TEOS, ozone, and nitrogen, can be regrouped during transmission. The gas circuits connecting the carrier gas source 211 and the TEOS source 212 are divided into a first group of gas circuits 210 for transmitting a first group of gases A including carrier gas and TEOS. The gas circuits connecting the supplemental gas source 221 are divided into a second group of gas circuits 220 for transmitting a second group of gases B including supplemental gas (i.e., nitrogen). The gas circuits connecting the ozone source 231 are divided into a third group of gas circuits 230 for transmitting a third group of gases C including ozone.

[0106] Then, step S920 may be performed: using a gas delivery device to mix the first group of gases, the second group of gases, and the third group of gases in equal proportions, and evenly distribute the mixed gases to each processing station in the reaction chamber to perform a deposition process.

[0107] Specifically, it can be combined Figure 2 It is generally understood that the gas inlet of each gas mixing section 250 in the gas delivery device 200 can be connected to the gas outlet of the first group of gas lines 210, the second group of gas lines 220, and the third group of gas lines 230, respectively, to obtain and mix equal proportions of the first group of gas A, the second group of gas B, and the third group of gas C. The gas flow rate and flow rate of the three groups of gases are the same within the gas mixing section 250. Therefore, when the mixed gas is evenly distributed (for example, divided into two) from the gas outlet of each gas mixing section 250 to the corresponding processing stations 120 in the reaction chamber 110 and then subjected to the deposition process, there is no gas cross-talk between the two processing stations 120, and the film thickness difference between the two stations can be reduced from the 10% difference in the prior art to a difference within the range of 1-2%.

[0108] Can be combined Figure 4 It is commonly understood that, in theory, the ratios of the various process gases in the mixed gas entering the two processing stations 120 should be the same. However, considering that if a sealing ring is added between the edge of the laminated baffle on the gas mixer 251 and the gas mixing block 350, the high temperature and high pressure environment will exacerbate the corrosion of the sealing ring, thereby affecting the performance of wafer particles, in some embodiments of the present invention, no seal is provided between the edge of the laminated baffle on the gas mixer 251 and the gas mixing block 350. This results in a significant difference in the flow rates of some gases within the two processing stations in the prior art, and the flow rate of the first group of gases, including carrier gas and TEOS, allocated to one processing station may be greater than the flow rate of the first group of gases allocated to the other processing station 120. Similarly, the second group of gases, including ozone and nitrogen, is also uneven when divided into two, which can easily lead to gas cross-talk between the two processing stations. Therefore, in this embodiment, the first group of gases A including carrier gas and TEOS, the second group of gases B including nitrogen, and the third group of gases C including ozone are delivered to the gas mixing section 250 at equal gas flow rates, which can ensure that there is basically no gas cross-talk between the gases in the two processing stations 120.

[0109] Next, see Figure 10 , Figure 10 A film thickness difference curve of two processing stations in a replicated machine without adjusting the metering valve in a reaction chamber according to some embodiments of the present invention is shown.

[0110] like Figure 10As shown in the figure, after eight hardware disassembly and assembly tests, the left side of line P shows thin films formed in two processing stations of a semiconductor device process equipment using a conventional gas delivery device that divides multiple process gases into two gas paths. Without adjusting the metering valve, the film thickness difference between the two stations can be as high as 10% to 15%. On the right side of line P, thin films formed in two processing stations of a semiconductor device process equipment using a gas delivery device provided by the present invention that divides multiple process gases into three gas paths in equal proportions can be formed. Without adjusting the metering valve, the film thickness difference between the two stations can be less than 1.5%.

[0111] Although the above methods are illustrated and described as a series of acts for simplicity of explanation, it is to be understood and appreciated that these methods are not limited by the order of the acts, as some acts may occur in a different order and / or concurrently with other acts from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art according to one or more embodiments.

[0112] In summary, the utility model provides a gas delivery device and a process equipment for semiconductor devices, which can improve the uniformity of the distribution of multiple groups of process gases in the deposition process with a high aspect ratio, thereby reducing the film thickness difference between each processing station, shortening the process adjustment time, and improving production efficiency. At the same time, it can also increase the condensation temperature of TEOS, improve thin film particle contamination, and improve product quality.

[0113] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas delivery device, characterized in that: include: A first group of gas paths, the gas inlet end of which is connected to a carrier gas source and a TEOS source, for transmitting a first group of gases including a carrier gas and TEOS; a second group of gas circuits, the gas inlet end of which is connected to a supplementary gas source and is used to transmit a second group of gases including the supplementary gas; a third group of gas paths, the gas inlet end of which is connected to an ozone source and is used to transmit a third group of gases including ozone; and A plurality of gas mixing sections are provided, whose gas inlet ends are respectively connected to the gas outlet ends of the first group of gas paths, the second group of gas paths, and the third group of gas paths, so as to obtain equal proportions of the first group of gases, the second group of gases, and the third group of gases and mix them, and evenly distribute the mixed gas from the gas outlet ends of the gas mixing sections to the corresponding processing stations in the reaction chamber to perform the deposition process.

2. The gas delivery device according to claim 1, wherein Also includes: The first heating part is arranged in the second group of gas paths to heat the supplementary gas to a preset temperature before entering each of the gas mixing parts.

3. The gas delivery device according to claim 1, wherein The supplemental gas includes nitrogen.

4. The gas delivery device according to claim 1, wherein The gas mixing part includes a gas mixer, and the gas inlet end of the gas mixer includes a first pipeline, a second pipeline and a third pipeline spaced apart from each other, so as to respectively introduce the first group of gases, the second group of gases and the third group of gases. A gas mixing chamber is provided below the gas inlet end to mix the three groups of gases, and the gas outlet end of the gas mixer is provided at the lower end of the gas mixing chamber.

5. The gas delivery device according to claim 4, characterized in that A laminated partition is provided on the outer side of the upper end of the mixing chamber to isolate the first group of gases, the second group of gases and the third group of gases during air intake, and a plurality of air intake holes are evenly distributed on the cavity wall of the mixing chamber above or below each of the laminated partitions to allow each group of gases to enter the mixing chamber evenly in the circumferential direction.

6. The gas delivery device according to claim 4, wherein: The gas mixing section also includes a gas mixing block so that the gas mixer is fixed in the gas mixing block. A gas mixing channel is provided inside the gas mixing block. The gas outlet end of the gas mixer inserted into the gas mixing block is connected to the gas mixing channel to mix and transmit the mixed gas including the first group of gases, the second group of gases and the third group of gases to each processing station.

7. The gas delivery device according to claim 6, characterized in that The gas outlet end of the gas mixer is a plurality of gas outlet holes arranged in a circumferential array, so that the mixed gas can flow into the gas mixing channel uniformly in the circumferential direction.

8. A process equipment for a semiconductor device, characterized in that: include: A reaction chamber, which includes several processing stations for holding wafers for deposition processes; as well as The gas delivery device according to any one of claims 1 to 7, connected to the reaction chamber, is used to mix a first group of gases including a carrier gas and TEOS, a second group of gases including a supplementary gas, and a third group of gases including ozone in equal proportions, and evenly distribute the mixed gas to each of the processing stations to perform the deposition process.

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