Silicon carbide epitaxial growth processing device

Abstract

The utility model discloses a silicon carbide epitaxial growth processing device which comprises a lower half-moon assembly with a positioning shaft hole in the middle, the axis of the positioning shaft hole extends in the vertical direction, a center rotating shaft is coaxially inserted in the positioning shaft hole in a fixed-axis rotating mode, and the bottom end of the center rotating shaft abuts against the hole bottom of the positioning shaft hole. The top end of the central rotating shaft protrudes out of a top end orifice of the positioning shaft hole in the vertical direction; the top of the central rotating shaft is linked with a rotating carrying disc, a linkage shaft hole is formed in the center of the bottom surface of the rotating carrying disc, the top end of the central rotating shaft is coaxially inserted into the linkage shaft hole in an aligned manner, and the height of the top end of the central rotating shaft protruding out of a top end orifice of the positioning shaft hole in the vertical direction is not smaller than the axial depth of the linkage shaft hole; the outer wall of the lower half-moon assembly is provided with a gas supply port for introducing protective gas, and the lower half-moon assembly is internally provided with a gas guide pipeline for communicating the gas supply port with the positioning shaft hole and the rotary carrying disc.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor wafer product finishing technology and supporting equipment, in particular to a silicon carbide epitaxial growth processing device. Background Art

[0002] As a core component in the semiconductor industry, silicon carbide wafers play a vital role in the performance and technological development of semiconductor products. During the general production and processing of silicon carbide wafers, corresponding processing equipment is typically used to ensure the quality of epitaxial growth and molding of silicon carbide and other silicon carbide semiconductor materials. Accordingly, the performance of these devices for silicon carbide epitaxial growth and processing is also a key focus of technological improvement in the industry.

[0003] Typically, a silicon carbide epitaxial growth apparatus utilizes a lower half-moon assembly as the base support structure. A central shaft is then assembled in the middle of the lower half-moon assembly, and a rotating carrier is aligned and assembled on top of the shaft to complete the apparatus's main structure. During operation, protective gas introduced into the lower half-moon assembly moderately elevates the rotating carrier, which then rotates along its axis to achieve epitaxial growth and shaping of the silicon carbide on the carrier.

[0004] However, although the above-mentioned device structure can meet the basic needs of silicon carbide epitaxial growth processing at this stage, the existing central rotating shaft is floatingly inserted into the central socket of the lower half-moon component. When the actual device is in operation, the central rotating shaft connected to the bottom of the rotating carrier is lifted up by the high-pressure airflow of the protective gas to complete the relevant operations. When the air pressure, flow rate, etc. of the protective gas change, resulting in a change in the lifting force of the airflow on the rotating carrier, or when the device is paused and the rotating carrier moves back to the top of the lower half-moon component quickly, the rotating carrier may fall back in a state of inertial rotation and rub against the lower half-moon component. This will cause the lower half-moon component made of graphite material to produce graphite powder due to friction. These graphite powders will be carried by the protective gas and blown to the surface of the silicon carbide product during the subsequent operation of the device, causing the epitaxial growth and molding quality of silicon carbide to be adversely affected, thereby reducing the yield rate of silicon carbide products.

[0005] In view of this, how to optimize the component structure of the silicon carbide epitaxial growth processing device to avoid the impact of graphite powder generated by the friction of its components on the quality of silicon carbide products and improve the yield rate of silicon carbide products is an important technical problem that technicians in this field currently need to solve. Utility Model Content

[0006] The purpose of the utility model is to provide a silicon carbide epitaxial growth processing device, which can effectively avoid the adverse effects of graphite powder generated by friction between a rotating carrier and a lower half-moon component on silicon carbide products, thereby improving the yield rate of silicon carbide products.

[0007] To solve the above technical problems, the present invention provides a silicon carbide epitaxial growth processing device, comprising a lower half-moon component having a positioning shaft hole in the middle, the lower half-moon component being made of graphite, the axis of the positioning shaft hole extending in the vertical direction, a central rotating shaft being coaxially inserted into the positioning shaft hole for fixed axis rotation, the bottom end of the central rotating shaft abutting against the bottom of the positioning shaft hole, and the top end of the central rotating shaft protruding from the top opening of the positioning shaft hole in the vertical direction;

[0008] The top of the central rotating shaft is linked to a rotating carrier, and the bottom center of the rotating carrier has a linkage shaft hole. The top end of the central rotating shaft is coaxially inserted into the linkage shaft hole, and the top end of the central rotating shaft protrudes from the top end of the positioning shaft hole in the vertical direction by a height that is not less than the axial depth of the linkage shaft hole.

[0009] An air supply port for introducing protective gas is provided on the outer wall of the lower half-moon component, and an air guide pipe connecting the air supply port with the positioning shaft hole and the rotating carrier is provided inside the lower half-moon component.

[0010] Preferably, the outer peripheral wall of the central rotating shaft is tightly fitted with and slidably adapted to the inner peripheral wall of the positioning shaft hole.

[0011] Preferably, the outer diameter of the central shaft is 5.95 mm to 6.05 mm.

[0012] Preferably, the inner diameter of the positioning shaft hole is 5.95 mm to 6.05 mm.

[0013] Preferably, the inner diameter of the linkage shaft hole is 6.05mm~6.15mm.

[0014] Preferably, the axial length of the top end of the central shaft protruding from the top end opening of the positioning shaft hole is not less than 4 mm, and the axial depth of the linkage shaft hole is 4 mm to 6 mm.

[0015] Preferably, the axial length of the central rotating shaft is 9 mm to 13 mm, and the axial depth of the positioning shaft hole is 5 mm to 7 mm.

[0016] Preferably, the protective gas introduced into the gas supply port is nitrogen.

[0017] The present invention also provides a method for assembling and inspecting a silicon carbide epitaxial growth processing device, which is used for the silicon carbide epitaxial growth processing device as described in any one of the above items, comprising the steps of:

[0018] Place the lower half-moon assembly on a horizontal surface, then align and insert the central rotating shaft into the positioning shaft hole, so that the bottom end of the central rotating shaft abuts against the bottom of the positioning shaft hole, then lift the central rotating shaft moderately upwards, and use a vernier caliper to measure the height of the top end of the central rotating shaft protruding from the top end of the positioning shaft hole, making sure that the height is not less than the axial depth of the linkage shaft hole at the bottom of the rotating carrier, then align and insert the top end of the central rotating shaft into the linkage shaft hole, so that the rotating carrier and the central rotating shaft are assembled in linkage;

[0019] A protective gas at a flow rate of 2-3 L / min is introduced into the gas supply port through an external gas supply device to drive the rotating carrier to rotate. At this time, the rotating carrier is observed to see whether it rotates stably and whether it makes any abnormal noise during the rotation. If the rotating carrier rotates stably and there is no abnormal noise, it is determined that the components of the current silicon carbide epitaxial growth processing device are installed.

[0020] After the installation is completed, the silicon carbide epitaxial growth processing device is assembled with other matching graphite accessories and placed in the process chamber. After that, the chamber is closed, vacuumed, gas is backfilled and heated up in sequence, and then the epitaxial growth operation of silicon carbide is carried out.

[0021] Preferably, when the center shaft is lifted moderately upward from the positioning shaft hole, a moderate lateral force is applied to the center shaft, and it is observed whether the center shaft has radial swing or looseness when the force is applied. If the center shaft has no swing and no looseness, it is determined that the center shaft and the positioning shaft hole are installed in place.

[0022] Compared with the above-mentioned background technology, the silicon carbide epitaxial growth processing device provided by the present invention adopts a central rotating shaft with a longer axial dimension during the assembly and operation of its components. After the bottom end of the central rotating shaft reliably abuts the bottom end of the hole of the positioning shaft, the top end of the central rotating shaft can protrude from the top end opening of the positioning shaft hole in the vertical direction, and the size of the top end of the central rotating shaft protruding from the top end opening of the positioning shaft hole is not less than the hole depth of the linkage shaft hole on the bottom surface of the rotating carrier. Therefore, after the top end of the central rotating shaft is aligned and plugged into the linkage shaft hole, the main structure of the rotating carrier can be reliably supported by the central rotating shaft, thereby effectively avoiding rigid contact and structural friction between the bottom of the rotating carrier and the top of the lower half-moon assembly, and further avoiding the generation of graphite powder and other material dust and debris generated by the mutual friction between the rotating carrier and the lower half-moon assembly. As a result, the adverse effects on the silicon carbide product caused by the high-pressure airflow of graphite powder and the like along with the protective gas being blown onto the surface of the silicon carbide product on the rotating carrier are prevented, thereby significantly improving the molding effect of the product after the silicon carbide epitaxial growth process and correspondingly improving the yield rate of related products such as silicon carbide wafers. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0024] Figure 1 This is an axonometric perspective view of the assembly structure of a silicon carbide epitaxial growth processing device provided by a specific embodiment of the present utility model;

[0025] Figure 2 for Figure 1 Side view of .

[0026] in:

[0027] 11-lower half moon assembly; 111-positioning shaft hole; 112-air supply port;

[0028] 12-Center shaft;

[0029] 13-rotating carrier plate; 131-linkage shaft hole;

[0030] 14-High pressure air pipe. DETAILED DESCRIPTION

[0031] The core of the utility model is to provide a silicon carbide epitaxial growth processing device, which can effectively avoid the adverse effects of graphite powder generated by friction between the rotating carrier and the lower half-moon component on silicon carbide products, thereby improving the yield of silicon carbide products.

[0032] In order to enable those skilled in the art to better understand the present invention, the present invention will be described in further detail below with reference to the accompanying drawings and specific implementation methods.

[0033] Please refer to Figure 1 and Figure 2 .

[0034] In a specific embodiment, the silicon carbide epitaxial growth processing device provided by the present invention includes a lower semi-moon component 11 with a positioning shaft hole 111 in the middle. The lower semi-moon component 11 is a graphite part. The axis of the positioning shaft hole 111 extends in the vertical direction. A central rotating shaft 12 is coaxially inserted in the positioning shaft hole 111 for fixed axis rotation. The bottom end of the central rotating shaft 12 is against the bottom of the positioning shaft hole 111, and the top end of the central rotating shaft 12 protrudes from the top opening of the positioning shaft hole 111 in the vertical direction.

[0035] The top of the central rotating shaft 12 is linked to a rotating carrier 13, and the center of the bottom surface of the rotating carrier 13 has a linkage shaft hole 131. The top end of the central rotating shaft 12 is coaxially inserted into the linkage shaft hole 131, and the top end of the central rotating shaft 12 protrudes from the top end opening of the positioning shaft hole 111 in the vertical direction by a height that is not less than the axial depth of the linkage shaft hole 131.

[0036] An air supply port 112 for introducing protective gas is provided on the outer wall of the lower half-moon assembly 11 , and an air guide pipe is provided inside the lower half-moon assembly 11 to connect the air supply port 112 with the positioning shaft hole 111 and the rotating carrier 13 .

[0037] During the specific component assembly and operation process, due to the use of a center shaft 12 with a longer axial dimension, after the bottom end of the center shaft 12 reliably abuts the bottom end of the positioning shaft hole 111, the top end of the center shaft 12 can protrude from the top end opening of the positioning shaft hole 111 in the vertical direction, and the size of the top end of the center shaft 12 protruding from the top end opening of the positioning shaft hole 111 is not less than the hole depth of the bottom linkage shaft hole 131 of the rotating carrier 13. Therefore, after the top end of the center shaft 12 is aligned and plugged into the linkage shaft hole 131, the center shaft 12 can be used to reliably support the main structure of the rotating carrier 13, thereby effectively avoiding rigid contact and structural friction between the bottom of the rotating carrier 13 and the top of the lower semi-moon component 11, and thereby avoiding the generation of graphite powder and other material dust and debris generated by the mutual friction between the rotating carrier 13 and the lower semi-moon component 11. As a result, the adverse effects on the silicon carbide product caused by the high-pressure airflow of graphite powder and the like along with the protective gas being blown to the surface of the silicon carbide product on the rotating carrier 13 are prevented, thereby significantly improving the product molding effect after the silicon carbide epitaxial growth process, and correspondingly improving the yield rate of related products such as silicon carbide wafers.

[0038] It is not difficult to understand that, during the specific operation of the equipment, the high-pressure protective gas provided by the external compressed gas supply equipment is fed into the interior of the silicon carbide epitaxial growth processing device through the gas supply port 112. These high-pressure protective gases usually have two uses. One is to be transported from bottom to top to the bottom of the rotating carrier 13 to lift the rotating carrier 13 so that the rotating carrier 13 and the central rotating shaft 12 connected to the bottom thereof are appropriately lifted to prevent the rotating carrier 13 and the central rotating shaft 12 from interfering with the main structure of the lower half-moon assembly 11 during the subsequent rotation process; the second is to be sent to the side of the main structure of the rotating carrier 13 or to be able to adapt to its tangential direction. position, thereby utilizing the continuous blowing of high-pressure airflow, utilizing the high-pressure airflow flowing through the rotating carrier 13 in the transverse or substantially horizontal direction to drive the rotating carrier 13 to rotate on a fixed axis, and thereby driving the central rotating shaft 12 to rotate synchronously. Since most of the main structure of the central rotating shaft 12 is still inserted in the positioning shaft hole 111, the circumferential and radial adaptation of the positioning shaft hole 111 to the central rotating shaft 12 can effectively limit the effective movement range of the central rotating shaft 12 and the rotating carrier 13, avoid radial loosening or dislocation of the rotating carrier 13, ensure the fixed-axis rotation tracking property and stability of the rotating carrier 13, thereby optimizing the corresponding silicon carbide epitaxial growth molding effect.

[0039] Generally, the protective gas introduced at the gas supply port 112 is nitrogen, and the gas flow rate of the nitrogen is 2~3L / min, that is, the flow rate of the nitrogen sent into the silicon carbide epitaxial growth processing device through the gas supply port 112 is 2 to 3 liters per minute. During the production and processing of silicon carbide, the chemical properties of the nitrogen are relatively stable and it is not easy to affect the silicon carbide processing process. Of course, in actual applications, other gases with relatively stable chemical properties, such as inert gases, can also be used as protective gases and introduced into the gas supply port 112 to meet the working requirements of the silicon carbide epitaxial growth processing device. However, considering the cost of using inert gases, it is still appropriate to use nitrogen as the protective gas, so as to further control the operation and maintenance costs of the silicon carbide epitaxial growth processing device within an appropriate range.

[0040] In addition, in order to ensure the nitrogen supply efficiency, a high-pressure gas pipe 14 can be connected between the gas supply port 112 and the external gas supply equipment to ensure the gas pressure and delivery efficiency delivered to the gas supply port 112, avoid gas pressure loss of nitrogen or other protective gases before being delivered to the gas supply port 112, and ensure that the gas pressure delivered to the interior of the silicon carbide epitaxial growth processing device can meet the corresponding process processing requirements.

[0041] Specifically, the outer circumferential wall of the central rotating shaft 12 is tightly fitted and slidably adapted to the inner circumferential wall of the positioning shaft hole 111. In this way, the positioning shaft hole 111 can be further utilized to form a reliable radial and circumferential limit for the central rotating shaft 12, thereby preventing the central rotating shaft 12 from deflecting, swinging, or vibrating during synchronous rotation with the rotating carrier 13, improving the coaxiality and tracking performance of the central rotating shaft 12 during fixed-axis rotation, thereby further optimizing the structural adaptation effect of the central rotating shaft 12 and the positioning shaft hole 111, avoiding non-operational wear between the central rotating shaft 12 and the positioning shaft hole 111, and thereby extending the service life of the central rotating shaft 12 and the positioning shaft hole 111, and making the rotation and operation of the central rotating shaft 12 smoother and more fluid.

[0042] More specifically, the outer diameter of the central shaft 12 is 5.95mm to 6.05mm, preferably 6mm. Accordingly, the inner diameter of the positioning shaft hole 111 is generally 5.95mm to 6.05mm, preferably 6mm. This ensures that the inner diameter of the positioning shaft hole 111 fully matches the outer diameter of the central shaft 12, ensuring a close fit and a perfect fit between the outer circumference of the central shaft 12 and the inner circumference of the positioning shaft hole 111, thus meeting the requirements for high-precision assembly.

[0043] Accordingly, the inner diameter of the linkage shaft hole 131 is 6.05 mm to 6.15 mm, preferably 6.1 mm. The inner diameter of the linkage shaft hole 131 can be slightly larger than the outer diameter of the central shaft 12 to facilitate smooth insertion and removal of the top end of the central shaft 12 into and out of the linkage shaft hole 131, allowing for quick connection and disconnection between the central shaft 12 and the rotating carrier 13 when necessary, thereby meeting the operational requirements of different processes or special working conditions.

[0044] On the other hand, the axial length of the top of the central shaft 12 protruding from the top opening of the positioning shaft hole 111 is no less than 4 mm, while the axial depth of the linkage shaft hole 131 is 4 mm to 6 mm. Considering the installation adaptation effect and application requirements in most working conditions, the axial length of the top of the central shaft 12 protruding vertically from the top opening of the positioning shaft hole 111 is preferably 5 mm to 6 mm.

[0045] In this way, after the central rotating shaft 12 is aligned and assembled with the positioning shaft hole 111 and the linkage shaft hole 131 respectively, the vertical fitting clearance between the rotating carrier 13 and the lower semi-moon assembly 11 can be guaranteed to avoid the friction caused by direct contact between the two to produce impurity powder such as graphite powder, and the problems of imbalance and easy swing of the rotating structure caused by the excessive axial dimension of the central rotating shaft 12 can be avoided, thereby effectively ensuring the rotation tracking and stability of the central rotating shaft 12, and making the operation of the silicon carbide epitaxial growth processing device more stable and efficient, and the corresponding silicon carbide epitaxial growth forming effect can be optimized accordingly.

[0046] Furthermore, the axial length of the central rotating shaft 12 is 9mm-13mm, and the axial depth of the positioning shaft hole 111 is 5mm-7mm. Similar to the design concept mentioned above, this axial length dimension helps further optimize the adaptability of the central rotating shaft 12 and the positioning shaft hole 111, avoiding unstable rotation caused by excessive axial length of the central rotating shaft 12. It also fully ensures that the top end of the central rotating shaft 12 protrudes from the top opening of the positioning shaft hole 111 to meet the requirements of plug-in adaptability with the linkage shaft hole 131.

[0047] In addition, it needs to be emphasized again that for equipment assembly and process application requirements under most working conditions, the length of the center shaft 12 should be controlled within 9~13mm, and the outer diameter of the center shaft 12 should be controlled within 6±0.05mm; the inner diameter of the positioning shaft hole 111 of the lower semi-moon assembly 11 should be controlled within 6±0.05mm, and the axial depth of the positioning shaft hole 111 should be controlled within 5~7mm; the inner diameter of the linkage shaft hole 131 on the rotating carrier 13 should be controlled within 6.1±0.05mm, and its axial depth should be controlled within 4~6mm.

[0048] Of course, in specific assembly applications, the structural dimensions of the above-mentioned shafts and holes can be adjusted accordingly according to the actual working conditions. However, for most conventional silicon carbide processing operations, it is still appropriate to use the above-mentioned dimensional parameters for design and application.

[0049] In a specific embodiment, the assembly inspection method of the silicon carbide epitaxial growth processing device provided by the present invention uses the silicon carbide epitaxial growth processing device as described above, including the following steps:

[0050] First, place the lower half moon assembly 11 on a horizontal plane, then align and insert the center shaft 12 into the positioning shaft hole 111, so that the bottom end of the center shaft 12 is against the bottom of the positioning shaft hole 111, then lift the center shaft 12 upward appropriately, and use a vernier caliper to measure the height of the top end of the center shaft 12 protruding from the top opening of the positioning shaft hole 111, so that the height is not less than the axial depth of the linkage shaft hole 131 at the bottom of the rotating carrier 13, then align and insert the top end of the center shaft 12 into the linkage shaft hole 131, so that the rotating carrier 13 and the center shaft 12 are assembled in linkage.

[0051] Afterwards, a protective gas at a flow rate of 2 to 3 L / min can be introduced into the gas supply port 112 through an external gas supply device to drive the rotating carrier 13 to rotate. At this time, observe whether the rotation of the rotating carrier 13 is stable and whether the rotating carrier 13 makes any abnormal noise during the rotation. If the rotating carrier 13 rotates stably and without abnormal noise, it is determined that the components of the current silicon carbide epitaxial growth processing device are installed.

[0052] If the rotating carrier 13 makes abnormal noise during its rotation or there is instability such as shaking or swinging during its rotation, it is determined that there is an abnormality in the assembly structure between the rotating carrier 13, the central shaft 12 and the lower half-moon assembly 11. The operator is required to appropriately adjust the assembly structure of the above components to an adaptive state. If necessary, the assembled parts can be disassembled again. After the structural abnormality is checked, they can be reassembled and the above detection process is repeated until there is no abnormal noise during the rotation of the rotating carrier 13 and the rotation is smooth and stable.

[0053] Finally, the installed silicon carbide epitaxial growth processing device is assembled with other matching graphite accessories and placed in the process chamber. After that, the chamber is closed, vacuumed, gas is backfilled, and the temperature is raised in sequence before the epitaxial growth of silicon carbide is carried out.

[0054] In the operational application of the above-mentioned assembly detection method, it effectively ensures the adaptive structure of the central shaft 12 after being inserted into the positioning shaft hole 111 through the various operating steps implemented in sequence, so that the size of the central shaft 12 extending from the top of the positioning shaft hole 111 is sufficient to meet the movement and operation requirements of the rotating carrier 13 after the central shaft 12 and the linkage shaft hole 131 are inserted, so that after the assembly is installed, there is still a moderate vertical matching gap between the bottom of the rotating carrier 13 and the lower half of the moon assembly 11, avoiding the bottom of the rotating carrier 13 and the top of the lower half of the moon assembly 11 from being too close. The direct contact and friction between the rotating carrier 13 and the lower half of the moon component 11 are detected, and the operating status of the equipment after the protective gas is introduced is combined to determine whether the component installation and adaptation are in place. The inspection result is accurate and reliable, which can fully guarantee the structural reliability of the silicon carbide epitaxial growth processing device after the assembly is completed. During the operation of the silicon carbide epitaxial growth processing device after the assembly is completed, graphite powder will not be generated due to the friction between the rotating carrier 13 and the lower half of the moon component 11, thereby avoiding the surface of the silicon carbide product from being contaminated by the graphite powder, thereby greatly optimizing the silicon carbide epitaxial growth molding quality and improving the yield rate of silicon carbide products.

[0055] In another specific embodiment, the present invention provides a method for assembling and inspecting a silicon carbide epitaxial growth processing device, using the silicon carbide epitaxial growth processing device described above, comprising the following steps:

[0056] First, place the lower half-moon assembly 11 on a horizontal surface, then align and insert the central rotating shaft 12 into the positioning shaft hole 111 so that the bottom end of the central rotating shaft 12 abuts against the bottom of the positioning shaft hole 111. Then, lift the central rotating shaft 12 upward appropriately and apply an appropriate lateral force to the central rotating shaft 12. Observe whether the central rotating shaft 12 has radial swing or looseness when the force is applied. If the central rotating shaft 12 does not swing or loosen, it is determined that the central rotating shaft 12 and the positioning shaft hole 111 are installed in place.

[0057] If the central shaft 12 has radial or circumferential swing or looseness, it is determined that there is an abnormality in the assembly structure between the central shaft 12 and the positioning shaft hole 111. The operator needs to properly adjust the assembly structure of the above components to an adaptive state. If necessary, the assembled parts can be disassembled and the corresponding parts can be replaced. After the structural abnormality is checked, reassemble and repeat the above detection process until the central shaft 12 no longer has radial and circumferential swing or looseness.

[0058] At this time, use a vernier caliper to measure the height of the top of the central rotating shaft 12 protruding from the top opening of the positioning shaft hole 111, so that the height is not less than the axial depth of the linkage shaft hole 131 at the bottom of the rotating carrier 13. Then, align the top of the central rotating shaft 12 and insert it into the linkage shaft hole 131 to assemble the rotating carrier 13 and the central rotating shaft 12 in linkage.

[0059] Afterwards, a protective gas at a flow rate of 2 to 3 L / min can be introduced into the gas supply port 112 through an external gas supply device to drive the rotating carrier 13 to rotate. At this time, observe whether the rotation of the rotating carrier 13 is stable and whether the rotating carrier 13 makes any abnormal noise during the rotation. If the rotating carrier 13 rotates stably and without abnormal noise, it is determined that the components of the current silicon carbide epitaxial growth processing device are installed.

[0060] If the rotating carrier 13 makes abnormal noise during its rotation or there is instability such as shaking or swinging during its rotation, it is determined that there is an abnormality in the assembly structure between the rotating carrier 13, the central shaft 12 and the lower half-moon assembly 11. The operator is required to appropriately adjust the assembly structure of the above components to an adaptive state. If necessary, the assembled parts can be disassembled again. After the structural abnormality is checked, they can be reassembled and the above detection process is repeated until there is no abnormal noise during the rotation of the rotating carrier 13 and the rotation is smooth and stable.

[0061] Finally, the installed silicon carbide epitaxial growth processing device is assembled with other matching graphite accessories and placed in the process chamber. After that, the chamber is closed, vacuumed, gas is backfilled, and the temperature is raised in sequence before the epitaxial growth of silicon carbide is carried out.

[0062] In the operational application of the above-mentioned assembly detection method, it effectively ensures the adaptive structure of the central shaft 12 after being inserted into the positioning shaft hole 111 through the various operating steps implemented in sequence, so that the size of the central shaft 12 extending from the top of the positioning shaft hole 111 is sufficient to meet the movement and operation requirements of the rotating carrier 13 after the central shaft 12 and the linkage shaft hole 131 are inserted, so that after the assembly is installed, there is still a moderate vertical matching gap between the bottom of the rotating carrier 13 and the lower half of the moon assembly 11, avoiding the bottom of the rotating carrier 13 and the top of the lower half of the moon assembly 11 from being too close. The direct contact and friction between the rotating carrier 13 and the lower half of the moon component 11 are detected, and the operating status of the equipment after the protective gas is introduced is combined to determine whether the component installation and adaptation are in place. The inspection result is accurate and reliable, which can fully guarantee the structural reliability of the silicon carbide epitaxial growth processing device after the assembly is completed. During the operation of the silicon carbide epitaxial growth processing device after the assembly is completed, graphite powder will not be generated due to the friction between the rotating carrier 13 and the lower half of the moon component 11, thereby avoiding the surface of the silicon carbide product from being contaminated by the graphite powder, thereby greatly optimizing the silicon carbide epitaxial growth molding quality and improving the yield rate of silicon carbide products.

[0063] In summary, it can be seen that the silicon carbide epitaxial growth processing device provided in the present invention has a central shaft with a longer axial dimension during the assembly and operation of its components. After the bottom end of the central shaft reliably abuts the bottom end of the positioning shaft hole, the top end of the central shaft can protrude from the top end opening of the positioning shaft hole in the vertical direction, and the size of the top end of the central shaft protruding from the top end opening of the positioning shaft hole is not less than the hole depth of the linkage shaft hole on the bottom surface of the rotating carrier. Therefore, after the top end of the central shaft is aligned and plugged into the linkage shaft hole, the main structure of the rotating carrier can be reliably supported by the central shaft, thereby effectively avoiding rigid contact and structural friction between the bottom of the rotating carrier and the top of the lower half-moon assembly, and further avoiding the generation of graphite powder and other material dust and debris generated by the mutual friction between the rotating carrier and the lower half-moon assembly. As a result, the adverse effects on the silicon carbide product caused by the high-pressure airflow of graphite powder and the like along with the protective gas being blown onto the surface of the silicon carbide product on the rotating carrier are prevented, thereby significantly improving the molding effect of the product after the silicon carbide epitaxial growth process and correspondingly improving the yield rate of related products such as silicon carbide wafers.

[0064] The above is a detailed introduction to the silicon carbide epitaxial growth processing device provided by the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only intended to help understand the method and core concept of the present invention. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims

1. A silicon carbide epitaxial growth processing device, characterized in that: The lower half-moon assembly comprises a central portion having a positioning shaft hole, the lower half-moon assembly being made of graphite, the axis of the positioning shaft hole extending in a vertical direction, a central rotating shaft being coaxially inserted into the positioning shaft hole for fixed axis rotation, the bottom end of the central rotating shaft abutting against the bottom of the positioning shaft hole, and the top end of the central rotating shaft protruding vertically from the top opening of the positioning shaft hole; The top of the central rotating shaft is linked to a rotating carrier, and the bottom center of the rotating carrier has a linkage shaft hole. The top end of the central rotating shaft is coaxially inserted into the linkage shaft hole, and the top end of the central rotating shaft protrudes from the top end of the positioning shaft hole in the vertical direction by a height that is not less than the axial depth of the linkage shaft hole. An air supply port for introducing protective gas is provided on the outer wall of the lower half-moon component, and an air guide pipe connecting the air supply port with the positioning shaft hole and the rotating carrier is provided inside the lower half-moon component.

2. The silicon carbide epitaxial growth processing apparatus according to claim 1, wherein: The outer peripheral wall of the central rotating shaft is tightly fitted with the inner peripheral wall of the positioning shaft hole and is slidably adapted.

3. The silicon carbide epitaxial growth processing apparatus according to claim 2, wherein: The outer diameter of the central shaft is 5.95 mm to 6.05 mm.

4. The silicon carbide epitaxial growth processing apparatus according to claim 3, wherein: The inner diameter of the positioning shaft hole is 5.95mm~6.05mm.

5. The silicon carbide epitaxial growth processing apparatus according to claim 3, wherein: The inner diameter of the linkage shaft hole is 6.05mm~6.15mm.

6. The silicon carbide epitaxial growth processing apparatus according to claim 1, wherein: The axial length of the top end of the central rotating shaft protruding from the top end opening of the positioning shaft hole is not less than 4 mm, and the axial depth of the linkage shaft hole is 4 mm to 6 mm.

7. The silicon carbide epitaxial growth processing apparatus according to claim 6, wherein: The axial length of the central rotating shaft is 9 mm to 13 mm, and the axial depth of the positioning shaft hole is 5 mm to 7 mm.

8. The silicon carbide epitaxial growth processing apparatus according to claim 1, wherein: The protective gas introduced into the gas supply port is nitrogen.

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