Highly-integrated silicon carbide module and case integrated device
By introducing the design of an annular water channel and V-shaped sealing ring into the silicon carbide module, combined with heat dissipation teeth and box cooling grooves, the problems of large size and slow heat dissipation of traditional modules are solved, the heat dissipation efficiency and integration of the new energy controller are improved, and the cost is reduced.
Patent Information
- Application Number
- CN202422793094.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-15
- Publication Date
- 2025-09-19
- Estimated Expiration
- 2034-11-15
AI Technical Summary
Traditional IGBT modules are large in size and have slow heat dissipation, while existing silicon carbide modules have low heat dissipation efficiency and a small range, which affects the power release of new energy controllers.
It adopts a highly integrated silicon carbide module design, including a driver board, silicon carbide MOS module and thin film capacitors. It uses a cooling component with a ring water channel for heat dissipation, and the water channel is sealed with a V-shaped sealing ring. The back of the silicon carbide MOS module is equipped with heat dissipation teeth, and cooling grooves are provided in the box to improve heat dissipation efficiency.
It achieves efficient heat dissipation, improves module integration and space utilization, and reduces development and manufacturing costs.
Smart Images
Figure CN223364452U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of new energy electric vehicles, and in particular to a highly integrated silicon carbide module and chassis integrated device. Background Art
[0002] In related technologies, new energy controllers all have main drive power modules. Traditional IGBT modules are bulky and slow to dissipate heat. Existing silicon carbide modules within electronic controls require assembly and heat dissipation. Conventional main drive modules are flat-lay designs, with water channels relying on contact for heat dissipation. This large size results in low heat dissipation efficiency and a limited range, impacting product power delivery. Utility Model Content
[0003] In order to solve the above technical problems, the present invention adopts the following technical solutions:
[0004] A highly integrated silicon carbide module includes, from top to bottom, a driver board, a silicon carbide MOS module, and a thin-film capacitor. A cooling assembly is located between the silicon carbide MOS module and the thin-film capacitor to dissipate heat. The cooling assembly includes an annular water channel and a V-shaped sealing ring to seal the channel. Specifically, the cooling assembly dissipates heat from both the front surfaces of the silicon carbide MOS module and the thin-film capacitor.
[0005] Furthermore, a groove for installing a V-shaped sealing ring is provided in the cooling assembly.
[0006] Furthermore, the back side of the silicon carbide MOS module is provided with heat dissipation teeth that can be inserted into the cooling assembly.
[0007] A chassis integration device comprises any one of the highly integrated silicon carbide modules described above, and also comprises a box for mounting the silicon carbide module.
[0008] Furthermore, a cooling groove is provided in the box body for dissipating heat from the back side of the film capacitor.
[0009] Compared with the prior art, the beneficial effects produced by the present invention are:
[0010] 1. The present invention dissipates heat from the thin film capacitor and silicon carbide MOS module by providing a cooling assembly with an annular water channel between the driver board and the thin film capacitor. A V-shaped sealing ring is used to seal the annular water channel within the cooling assembly. The V-shaped sealing ring has bidirectional sealing capabilities, resulting in a better sealing effect. Furthermore, the V-shaped sealing ring has good mobility and adaptability, can compensate for large tolerances and angular deviations, prevent the fluid inside the annular water channel from leaking outward, and also prevent foreign matter from intruding outside the annular water channel, making it more suitable for dynamic sealing applications. Furthermore, the V-shaped sealing ring has good wear resistance and a long service life, which can reduce the frequency of replacement and ensure the sealing and heat dissipation effect of the annular water channel.
[0011] 2. The utility model provides heat dissipation teeth on the back of the silicon carbide MOS module, which can be directly inserted into the cooling assembly. Within a limited volume, the contact area is larger, the integration is high, and the silicon carbide MOS module can dissipate heat more efficiently.
[0012] 3. The utility model is provided with a cooling groove in the box body for dissipating heat from the back of the film capacitor, which cooperates with the cooling component provided on the front of the film capacitor so that both the front and back of the film capacitor can be cooled in the working state, thereby improving the heat dissipation rate of the device.
[0013] 4. The silicon carbide module of the present invention has a compact internal structure and a smaller volume, which improves space utilization and is more conducive to platformization, thereby reducing subsequent development and manufacturing costs. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 It is a three-dimensional diagram of the present utility model.
[0015] Figure 2 This is a schematic diagram of the decomposition of the utility model
[0016] Figure 3 This is an exploded view of the structure of the present invention.
[0017] Figure 4 This is a schematic structural diagram of the silicon carbide module of the present invention.
[0018] Figure 5 This is a three-dimensional diagram of the silicon carbide MOS module of the present invention.
[0019] Among them, the numbers in the figure are: silicon carbide module 100, driver board 10, silicon carbide MOS module 20, heat dissipation teeth 21, cooling assembly 30, sealing ring 31, groove 32, film capacitor 40, box body 50, cooling groove 51, chassis integration device 200. DETAILED DESCRIPTION
[0020] The specific implementation of the present utility model will be described below with reference to the accompanying drawings.
[0021] In the description of the present invention, it should be noted that if terms such as "upper", "lower", "inner", "front", and "back" appear to indicate orientation or positional relationships, they are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present invention and simplifying the description. They do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as a limitation on the present invention.
[0022] Reference Figure 1 、 Figure 2 and Figure 3A highly integrated silicon carbide module and chassis integrated device. The silicon carbide module 100 includes a driver board 10, a silicon carbide MOS module 20, and a thin film capacitor 40 arranged from top to bottom. The silicon carbide module 100 is installed in a box 50 and assembled into a chassis integrated device 200.
[0023] Reference Figure 2 、 Figure 3 and Figure 4 The driver board 10 and the SiC MOS module 20 are electrically connected, as are the SiC MOS module 20 and the thin-film capacitor 40. A cooling assembly 30 is located between the SiC MOS module 20 and the thin-film capacitor 40. This cooling assembly 30 includes an annular water channel (not shown) for dissipating heat from the front of the thin-film capacitor 40. A cooling groove 51 is located within the housing 50 for dissipating heat from the back of the thin-film capacitor 40. During operation, heat can be dissipated from both the front and back of the thin-film capacitor 40, improving the device's heat dissipation efficiency and integration.
[0024] Reference Figure 4 A groove 32 for installing a V-shaped sealing ring 31 is provided in the cooling assembly 30 between the silicon carbide MOS module 20 and the thin film capacitor 40, which can close the annular water channel. Specifically, the upper and lower cross-sections of the V-shaped sealing ring 31 are both V-shaped, which has the ability of bidirectional sealing and better sealing effect. In this embodiment, the V-shaped sealing ring 31 realizes an extrusion-type dynamic seal by making its lip close to the sealing surface. The higher the liquid pressure, the tighter the sealing lip is to the sealing surface. At the same time, the V-shaped sealing ring 31 has good mobility and adaptability. After wear, it can compensate for large tolerances and angular deviations, avoid the fluid inside the annular water channel from leaking out, and also prevent foreign matter from entering the annular water channel. In addition, the V-shaped sealing ring 31 has good wear resistance and a long service life.
[0025] Reference Figure 4 and Figure 5 The back of the silicon carbide MOS module 20 is provided with a number of evenly arranged heat dissipation teeth 21. During assembly, the heat dissipation teeth 21 can be inserted into the cooling assembly 30. Within a limited volume, the heat dissipation area in contact with the annular water channel in the cooling assembly 30 is increased, thereby improving the heat dissipation rate of the silicon carbide MOS module 20.
[0026] Reference Figure 1 and Figure 2 In this embodiment, the driver board 10, the silicon carbide MOS module 20, the cooling assembly 30 and the box 50 are integrated into one. The internal structure of the silicon carbide module 100 is compact and the volume is smaller, which improves space utilization. At the same time, it is more conducive to platformization and reduces subsequent development costs and manufacturing costs.
[0027] The above is only a specific implementation method of the present invention, but the design concept of the present invention is not limited to this. Any non-substantial changes to the present invention using this concept shall be deemed as an infringement of the protection scope of the present invention.
Claims
1. A highly integrated silicon carbide module, comprising a driver board, a silicon carbide MOS module, and a thin film capacitor arranged in order from top to bottom, characterized in that: A cooling assembly for heat dissipation is provided between the silicon carbide MOS module and the thin film capacitor. An annular water channel and a V-shaped sealing ring for sealing the annular water channel are provided in the cooling assembly.
2. The highly integrated silicon carbide module according to claim 1, characterized in that: The cooling assembly is provided with a groove for installing a V-shaped sealing ring.
3. The highly integrated silicon carbide module according to claim 1, characterized in that: The back of the silicon carbide MOS module is provided with heat dissipation teeth that can be inserted into the cooling component.
4. A chassis integrated device, characterized in that: The highly integrated silicon carbide module according to any one of claims 1 to 3 further comprises a box, wherein the silicon carbide module is installed in the box.
5. The chassis integration device according to claim 4, characterized in that: A cooling groove for dissipating heat from the back of the film capacitor is provided in the box.