Structure for reducing argon pumping instability of ion pump

Abstract

The utility model relates to the technical field of ion pumps, and discloses a structure for reducing argon pumping instability of an ion pump, which comprises an anode, titanium cathodes and a tantalum sheet, the titanium cathodes are integrally in a sheet structure, the titanium cathodes are arranged on two sides of the anode, and gaps are reserved between the titanium cathodes and the anode; the tantalum sheets are arranged on one side, facing the anode, of the titanium cathode, and a plurality of tantalum sheets are arranged; the tantalum sheet is integrally of a circular sheet-shaped structure, and the tantalum sheet is arranged on the middle line of the anode; mounting holes are formed in the corners of the titanium cathode; according to the structure provided by the utility model, the tantalum sheet is combined with the titanium cathode, and the physical characteristics of the metal tantalum are utilized, so that the magnetic field distribution, the electrode configuration and the gas flow path in the pump can be optimized, the ion re-recombination phenomenon is reduced, the uniform adsorption efficiency of gas molecules is improved, and the more stable and efficient argon pumping process is realized.

Description

Technical Field

[0001] The utility model relates to the technical field of ion pumps, and more particularly to a structure for reducing the argon pumping instability of an ion pump. Background Art

[0002] In the field of high vacuum technology, ion pumps, as a key vacuum-generating device, are widely used in scientific research, industrial production, and other fields. However, existing ion pumps often exhibit a certain degree of instability when extracting inert gases, especially argon. Specifically, the vacuum level in the vacuum system suddenly increases, so that the system cannot operate normally. The reason is that argon cannot react chemically with titanium metal and is occasionally buried by sputtered titanium. The longer the time, the more it accumulates. If these buried areas are bombarded again by gas ions, they may be released, causing the vacuum level in the pump to suddenly deteriorate, so that it cannot operate normally. This instability not only affects the performance of the pump, but can also lead to uncertainty in the production process, increasing costs and risks.

[0003] As an inert gas, argon has low chemical activity and high ionization energy, making its extraction process in ion pumps relatively complex. Prior art ion pumps may encounter problems such as ion recombination and uneven adsorption of gas molecules on the pump walls during argon extraction, all of which can lead to fluctuations and decreases in argon extraction efficiency. To increase the stable argon extraction speed of ion pumps, three-stage ion pumps and tantalum metal sputtering ion pumps have been developed. Both can stably extract argon, but their complex processes and high costs limit their application.

[0004] In order to overcome these problems and improve the stability and efficiency of the ion pump during argon pumping, we proposed a structure to reduce the argon pumping instability of the ion pump. Utility Model Content

[0005] In order to overcome the deficiencies of the prior art, the utility model provides a structure for reducing the instability of argon pumping by an ion pump, which has the advantage of more precise operation.

[0006] To achieve the above-mentioned objectives, the present invention provides the following technical solutions: a structure for reducing the argon pumping instability of an ion pump, comprising: an anode, a titanium cathode, and a tantalum sheet, wherein the titanium cathode is in an overall sheet-like structure, is arranged on both sides of the anode, and a gap is left between the titanium cathode and the anode; the tantalum sheet is arranged on the side of the titanium cathode facing the anode, and a plurality of tantalum sheets are provided; the tantalum sheet is in an overall circular sheet-like structure, is arranged on the middle line of the anode; and mounting holes are provided at the corners of the titanium cathode.

[0007] As a preferred technical solution of the present invention, several groups of annular mounting seats are provided on the titanium cathode, and a clamping block 1 is provided on the inner side of the top of the mounting seat; the clamping blocks 1 are evenly arranged, and a pick-up and placement groove is formed between adjacent clamping blocks 1; the tantalum sheet is provided with a fixed block distributed in an annular array on the side facing the titanium cathode, and a clamping block 2 is provided on the top of the fixed block that is bent outward, and the clamping block 1 and the clamping block 2 are clamped to each other.

[0008] As a preferred technical solution of the present invention, the first and second card blocks are both arc-shaped structures, the pick-up and placement groove is an arc-shaped groove, and the curvature of the pick-up and placement groove is greater than that of the second card block.

[0009] As a preferred technical solution of the present invention, a bayonet is provided on the side of the second clamping block facing the tantalum sheet, and multiple groups of bayonet pins are evenly arranged on each second clamping block; a corresponding bayonet groove is provided on the side of the first clamping block facing the titanium cathode, and the bayonet pin is correspondingly engaged with the bayonet groove.

[0010] As a preferred technical solution of the present invention, a sleeve is provided at the central axis of the tantalum sheet, and the sleeve is arranged on the inner side of a fixed block distributed in a ring array; a spring rod is installed in the sleeve through a spring, and a spring plate is provided at the end of the spring rod, and the spring plate is in contact with the titanium cathode.

[0011] Compared with the prior art, the beneficial effects of the present invention are as follows: the structure provided by the present invention, by arranging a tantalum sheet in the middle position between the titanium cathode and the corresponding anode, utilizes the tantalum sheet to optimize the magnetic field distribution, electrode configuration and gas flow path inside the pump, reduces ion recombination, and improves the uniform adsorption efficiency of gas molecules, thereby achieving a more stable and efficient argon pumping process. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a schematic diagram of the structure of the utility model;

[0013] Figure 2 This is a schematic diagram of the installation of the titanium cathode and tantalum sheet of the utility model;

[0014] Figure 3 This is a schematic diagram of the titanium cathode structure of the utility model;

[0015] Figure 4 This is a schematic diagram of the tantalum sheet structure of the utility model Figure 1 ;

[0016] Figure 5 This is a schematic diagram of the tantalum sheet structure of the utility model Figure 2 ;

[0017] In the figure: 1. anode; 2. titanium cathode; 21. mounting seat; 22. clamping block 1; 23. pick-up and placement groove; 24. mounting hole; 3. tantalum sheet; 31. fixing block; 32. clamping block 2; 33. sleeve; 34. spring rod; 35. spring plate; 36. bayonet pin. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0019] like Figures 1 to 5 As shown, the utility model provides a structure for reducing the argon pumping instability of an ion pump, comprising: an anode 1, a titanium cathode 2 and a tantalum sheet 3, wherein the titanium cathode 2 is in a sheet-like structure as a whole, is arranged on both sides of the anode 1, and a gap is left between the titanium cathode 2 and the anode 1; the tantalum sheet 3 is arranged on the side of the titanium cathode 2 facing the anode 1, and a plurality of tantalum sheets 3 are provided; the tantalum sheet 3 is in a circular sheet-like structure as a whole, and is arranged on the middle line of the anode 1; and mounting holes 24 are provided at the corners of the titanium cathode 2.

[0020] The tantalum sheet 3 is arranged on the titanium cathode 2 and is located near the middle of the anode 1. By utilizing the tantalum sheet 3, the magnetic field distribution, electrode configuration and gas flow path inside the pump are optimized, thereby reducing ion recombination and improving the uniform adsorption efficiency of gas molecules.

[0021] Among them, the titanium cathode 2 is provided with several groups of annular mounting seats 21, and the inner side of the top of the mounting seat 21 is bent to form a clamping block 22; the clamping blocks 22 are evenly arranged, and a placement groove 23 is formed between adjacent clamping blocks 22; the tantalum sheet 3 is provided with a fixed block 31 distributed in an annular array on the side facing the titanium cathode 2, and the top of the fixed block 31 is bent outward to form a clamping block 2 32, and the clamping block 22 and the clamping block 32 are clamped with each other.

[0022] The tantalum sheet 3 is clamped with the clamping block 1 22 on the titanium cathode 2 via the clamping block 2 32 , thereby ensuring the stability of the tantalum sheet 3 after installation and preventing it from separating and falling off.

[0023] The first clamping block 22 and the second clamping block 32 are both arc-shaped structures, the taking-and-placing groove 23 is an arc-shaped groove, and the curvature of the taking-and-placing groove 23 is greater than that of the second clamping block 32 .

[0024] The arc-shaped card block 1 22 and card block 2 32 can be fitted together during rotation, and the card block 2 32 can be taken in and put out from the taking and putting groove 23 during rotation. The curvature of the taking and putting groove 23 is greater than that of the card block 2 32 to avoid obstruction to the card block 2 32.

[0025] Among them, the side of the second clamping block 32 facing the tantalum sheet 3 is provided with a clamping pin 36, and multiple groups of the clamping pins 36 are evenly arranged on each second clamping block 32; the side of the first clamping block 22 facing the titanium cathode 2 has a corresponding clamping groove, and the clamping pin 36 is correspondingly engaged with the clamping groove.

[0026] The provision of the latch pin 36 can increase the buckling strength of the first clamping block 22 and the second clamping block 32 after being clamped together, further improving the installation strength of the tantalum sheet 3 and ensuring its normal use.

[0027] Among them, a sleeve 33 is provided at the central axis of the tantalum sheet 3, and the sleeve 33 is arranged on the inner side of the fixed block 31 distributed in a ring array; a spring rod 34 is installed in the sleeve 33 through a spring, and a spring plate 35 is provided at the end of the spring rod 34, and the spring plate 35 is in contact with the titanium cathode 2.

[0028] The spring pushes the spring rod 34 so that the spring plate 35 presses against the titanium cathode 2. The reaction force of the spring makes the tantalum sheet 3 tend to move away from the titanium cathode 2, thereby making the first clamping block 22 and the second clamping block 32 more tightly connected and the latch pin 36 and the slot buckle more stable.

[0029] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus.

[0030] Although the embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations may be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A structure for reducing argon pumping instability of an ion pump, characterized in that: The invention comprises: an anode (1), a titanium cathode (2) and a tantalum sheet (3); the titanium cathode (2) is in a sheet-like structure as a whole, is arranged on both sides of the anode (1), and a gap is left between the titanium cathode (2) and the anode (1); the tantalum sheet (3) is arranged on the side of the titanium cathode (2) facing the anode (1), and a plurality of tantalum sheets (3) are provided; the tantalum sheet (3) is in a circular sheet-like structure as a whole, and is arranged on the middle line of the anode (1); and mounting holes (24) are provided at the corners of the titanium cathode (2).

2. The structure for reducing argon pumping instability of an ion pump according to claim 1, characterized in that: The titanium cathode (2) is provided with a plurality of groups of annular mounting seats (21), and a first clamping block (22) is provided on the inner side of the top of the mounting seat (21); the first clamping blocks (22) are evenly arranged, and a pick-up and drop-out groove (23) is formed between adjacent first clamping blocks (22); the tantalum sheet (3) is provided with a fixed block (31) distributed in an annular array on the side facing the titanium cathode (2), and a second clamping block (32) is provided on the top of the fixed block (31) so as to be bent outwards, and the first clamping block (22) and the second clamping block (32) are mutually engaged.

3. The structure for reducing argon pumping instability of an ion pump according to claim 2, characterized in that: The card block 1 (22) and the card block 2 (32) are both arc-shaped structures, the taking and placing groove (23) is an arc-shaped groove, and the curvature of the taking and placing groove (23) is greater than the curvature of the card block 2 (32).

4. The structure for reducing argon pumping instability of an ion pump according to claim 2, characterized in that: A latch pin (36) is provided on the side of the second clamping block (32) facing the tantalum sheet (3), and a plurality of groups of the latch pins (36) are evenly arranged on each second clamping block (32); a latch slot is provided on the side of the first clamping block (22) facing the titanium cathode (2), and the latch pin (36) is correspondingly engaged with the latch slot.

5. The structure for reducing argon pumping instability of an ion pump according to claim 1, characterized in that: A sleeve (33) is provided at the central axis of the tantalum sheet (3), and the sleeve (33) is provided on the inner side of a fixed block (31) distributed in a ring array; a spring rod (34) is installed in the sleeve (33) via a spring, and a spring plate (35) is provided at the end of the spring rod (34), and the spring plate (35) and the titanium cathode (2) are in contact with each other.

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