Plasma tower type ICP structure shielding case sintering device and pressing unit
Through the plasma tower type ICP structure shield sintering device, using screen printing and low-specification sintering furnace, the short circuit problem between the electrode coil and the shield is solved, and the stability and uniformity of the low-cost and efficient etching process are achieved.
Patent Information
- Application Number
- CN202421934210.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-12
- Publication Date
- 2025-09-30
- Estimated Expiration
- 2034-08-12
AI Technical Summary
In the prior art, the electrode coil cannot be infinitely close to the shield, which results in arcing short circuit, power loss, heating of the electrode coil, unstable etching process, and high processing cost or expensive equipment of the traditional shield.
A plasma tower ICP structure shield sintering device is used. By screen printing silver paste and shielding strip patterns, combined with a low-specification sintering furnace, the shielding strip is sintered on the ceramic cavity, reducing costs and improving etching uniformity.
It reduces the starting power requirement, reduces the risk of electrode coil heating, improves etching uniformity, reduces equipment costs, and avoids the risk of coolant leakage.
Smart Images
Figure CN223402743U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of plasma shield sintering, in particular to a plasma tower type ICP structure shield sintering device and a pressing unit. Background Art
[0002] For low-pressure plasma ICP structures, the plasma ignition process goes through a transition from capacitive coupling to inductive coupling. When the power of the electrode coil on the ICP structure exceeds a certain level (this power is much greater than the capacitive coupling power), the ignition process enters the inductive coupling mode. At this point, the plasma ignition is stable and the particle concentration is much greater than that during capacitive coupling.
[0003] For the ICP structure, after the plasma ignites, the ions will gather near the electrode coil due to the adhesion effect. Visually, the glow only appears around the coil. Such a structure will make the entire particle distribution uneven, resulting in low overall uniformity during plasma etching. The usual method is to add a Faraday shield to reduce the sheath layer, so that the particles are more evenly distributed in the reaction chamber. The usual shield is a one-piece metal cage structure that is machined. The shield is fitted to the tower-shaped ceramic cavity. The ICP electrode coil needs to be as close to the shield as possible so that the electrode coil energy can be coupled into the ceramic cavity as much as possible, allowing the gas to break through the capacitive coupling mode and enter the inductive coupling mode during ignition.
[0004] However, in the aforementioned prior art, the electrode coil cannot be infinitely close to the shielding cover, and the energy on the coil will break through the air between the coil and the shielding cover, causing an arcing short circuit. The shielding cover is machined and is 1 mm thick, resulting in power loss. Therefore, in order to break through the capacitive coupling mode and enter the inductive coupling mode, the power on the electrode coil must be increased, which will cause the current on the electrode coil to increase, making the electrode coil more likely to heat up, and ultimately making the etching process unstable; at the same time, the shielding cover is machined in an integrated manner and is a closed-loop structure. From the circuit structure point of view, the energy on the electrode coil will be coupled to the shielding cover, and eventually a conductive loop will be formed, thereby exacerbating the power loss of the electrode coil. Utility Model Content
[0005] The purpose of the present utility model is to provide a plasma tower type ICP structure shield cover sintering device and a pressing unit to solve the problem in the prior art that the electrode coil cannot be endlessly close to the shield cover, the energy on the coil will break through the air between the coil and the shield cover, causing an arcing short circuit, and the shield cover is machined and has a thickness of 1mm, resulting in power loss. Therefore, in order to break through the capacitive coupling mode and enter the inductive coupling mode, the power on the electrode coil must be increased, which will cause the current on the electrode coil to become larger, thereby making the electrode coil more likely to heat up, and ultimately making the etching process unstable.
[0006] To achieve the above-mentioned objectives, in the first aspect, the utility model provides a plasma tower type ICP structure shield cover sintering device, comprising a base, a rotating seat, a dividing head, two guide rods, two movable seats, two locking units and a wire mesh, wherein the rotating seat is fixedly connected to the base and is located above the base, one end of the rotating seat is rotatably connected to the dividing head, a ceramic cavity is placed on the dividing head, the two guide rods are fixedly connected to the base and are symmetrically distributed on both sides of the rotating seat, the two movable seats are respectively slidably connected to the corresponding guide rods, the two locking units are respectively arranged on the corresponding movable seats, the wire mesh is fixedly connected to the two movable seats and is located above the ceramic cavity, and the wire mesh has a shielding bar pattern.
[0007] Wherein, the locking unit includes two threaded rods and two handles, one end of the two threaded rods respectively passes through the corresponding moving seats, and the other ends of the two threaded rods are respectively fixedly connected to the corresponding handles.
[0008] In the second aspect, the utility model also provides a downward pressure unit, which is used in the plasma tower type ICP structure shield cover sintering device as described in the first aspect, and the downward pressure unit includes a placement seat, a first metal ring, a second metal ring and a metal block. The ceramic cavity is placed above the placement seat, and the outer wall of the ceramic cavity is provided with a shielding strip. The first metal ring is arranged on the outer wall of the ceramic cavity and the shielding strip, and the second metal ring is arranged on the outer wall of the ceramic cavity and the shielding strip, and the metal block is placed above the ceramic cavity.
[0009] Wherein, the second metal ring is located above the first metal ring.
[0010] The utility model discloses a plasma tower type ICP structure shield sintering device and a pressing unit. The ceramic cavity is fixedly placed on the dividing head, and then silver paste is applied to the shielding strip pattern of the screen. The locking unit is unlocked to move the screen downward, and the silver paste is printed on the ceramic cavity. Then, the rotating seat drives the dividing head and the ceramic cavity to rotate, and the silver paste is printed again. The operation is repeated until all positions are equally coated with the shielding strip pattern. At this time, the screen moves up and is re-locked by the locking unit to prevent it from falling. Then, it is placed in the sintering furnace for The first sintering is performed to solidify the silver paste. After taking it out, tin paste is applied on the silver paste, and then a shielding strip is placed on the tin paste. After clamping it, a second sintering is performed to obtain a shielding cover. In traditional processes, cold spraying can also be used to achieve the purpose of metallization of the ceramic surface, but the cost is high and the ceramic parts are at risk of breakage during processing; other metal film growth processes similar to metal evaporation or PVD, CVD have very high equipment costs. The present application uses a low-specification sintering furnace with a simple process, reduces costs, and effectively sinters the metal shielding strip to the ceramic cavity to achieve the function of the shielding cover. BRIEF DESCRIPTION OF THE DRAWINGS
[0011] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art.
[0012] Figure 1 It is a structural schematic diagram of the first sintering of the utility model.
[0013] Figure 2 It is a structural schematic diagram of the second sintering of the utility model.
[0014] Figure 3 This is a simulation result diagram of the traditional shielding cover of the present invention.
[0015] Figure 4 This is a simulation result diagram of the optimized shielding cover of the utility model.
[0016] 1-base, 2-rotating seat, 3-dividing head, 4-guide rod, 5-moving seat, 6-wire mesh, 7-ceramic cavity, 8-shielding bar pattern, 9-threaded rod, 10-handle, 11-placement seat, 12-first metal ring, 13-second metal ring, 14-metal block, 15-shielding bar. DETAILED DESCRIPTION
[0017] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, but should not be understood as limiting the present invention.
[0018] See also Figures 1 to 4 , first embodiment, the utility model provides a plasma tower type ICP structure shield cover sintering device, including a base 1, a rotating base 2, a dividing head 3, two guide rods 4, two movable bases 5, two locking units and a wire mesh 6, the rotating base 2 is fixedly connected to the base 1, and is located above the base 1, one end of the rotating base 2 is rotatably connected to the dividing head 3, a ceramic cavity 7 is placed on the dividing head 3, the two guide rods 4 are fixedly connected to the base 1, and are symmetrically distributed on both sides of the rotating base 2, the two movable bases 5 are respectively slidably connected to the corresponding guide rods 4, the two locking units are respectively arranged on the corresponding movable bases 5, the wire mesh 6 is fixedly connected to the two movable bases 5, and is located above the ceramic cavity 7, and the wire mesh 6 has a shielding bar pattern 8.
[0019] Furthermore, the locking unit includes two threaded rods 9 and two handles 10 , one end of the two threaded rods 9 respectively passes through the corresponding movable seat 5 , and the other end of the two threaded rods 9 is fixedly connected to the corresponding handle 10 .
[0020] In this embodiment, the handle 10 is rotated to drive the threaded rod 9 to rotate, and then the threaded rod 9 abuts against the guide rod 4 to fix the movable base 5.
[0021] In the second embodiment, the utility model provides a downward pressure unit, which is used in the plasma tower type ICP structure shield cover sintering device as described in the first embodiment, including a placement seat 11, a first metal ring 12, a second metal ring 13 and a metal block 14. The ceramic cavity 7 is placed above the placement seat 11, and the outer wall of the ceramic cavity 7 is provided with a shielding strip 15. The first metal ring 12 is sleeved on the outer wall of the ceramic cavity 7 and the shielding strip 15, and the second metal ring 13 is sleeved on the outer wall of the ceramic cavity 7 and the shielding strip 15. The metal block 14 is placed above the ceramic cavity 7.
[0022] In this embodiment, the base 1 supports the rotating seat 2 and the guide rod 4. First, the ceramic cavity 7 is fixedly placed on the dividing head 3, and then silver paste is applied to the shielding strip pattern 8 of the screen 6. The locking unit is unlocked to move the screen 6 downward, and the silver paste is printed on the ceramic cavity 7. Then, the rotating seat 2 drives the dividing head 3 and the ceramic cavity 7 to rotate, and the silver paste is printed again. The operation is repeated until all positions are equally coated with the shielding strip pattern 8. At this time, the screen 6 moves upward and is re-locked by the locking unit to prevent it from falling, and then it is placed in the sintering machine. The furnace performs the first sintering to solidify the silver paste. After taking it out, tin paste is applied on the silver paste, and then the shielding strip 15 is placed on the tin paste, and it is clamped and then sintered for the second time to obtain a shielding cover. In traditional processes, cold spraying can also be used to achieve the purpose of metallization of the ceramic surface, but the cost is high and the ceramic parts are at risk of breakage during processing; other metal film growth processes similar to metal evaporation or PVD, CVD, have very high equipment costs. However, this application uses a low-specification sintering furnace, which is simple in process, reduces costs, and effectively sinters the metal shielding strip 15 to the ceramic cavity 7 to achieve the function of the shielding cover;
[0023] The placement seat 11 can support the ceramic cavity 7, the first metal ring 12 and the second metal ring 13 fix the lower and middle parts of the shielding bar 15, and then the metal block 14 fixes the top;
[0024] Comparison of traditional and optimized shielding covers:
[0025] Shielding cover type Actual starting power Total RF power requirement Traditional shielding cover 1400W ≥1500W Optimized shielding cover 1100W ≥1200W
[0026] From the perspective of plasma ignition power, simulation results show that the optimized shield requires less ignition power. Actual experimental results show that the traditional shield structure requires 1400W ignition power, while the optimized shield structure requires 1100W. Taking into account power losses in the transmission line, the total power requirements for the RF power supply are a minimum of 1500W and 1200W, respectively. Currently, there are no RF power supplies on the market with maximum powers between 1250W and 1500W, as tower-type ICPs are not widely used in 8-inch debonding. Currently, only water-cooled RF power supplies with power greater than 1500W are available. Based on actual engineering application experience, water-cooled semiconductor equipment often leaks coolant, causing dust pollution or even damage to the equipment. Therefore, the optimized shield structure can use an air-cooled RF power supply with a range of 1250W, eliminating the risk of coolant leakage.
[0027] Figure 3Simulation results under 1.1 torr, 3000 sccm oxygen flow rate and traditional shielding cover;
[0028] Figure 4 Simulation results after shield optimization at 1.1 torr and 3000 sccm oxygen flow rate.
[0029] In this embodiment, when sintering, the ceramic cavity 7 is fixed on the dividing head 3; the screen 6 is fixedly installed above the dividing head 3; the silver paste for sintering is applied to the shielding bar pattern 8; the screen 6 is moved downward by printing, and the shielding bar pattern 8 is printed on the ceramic cavity 7; the dividing head 3 is rotated in equal parts, and the screen 6 printing steps are repeated to apply silver paste to all the shielding bars 15 of the ceramic cavity 7; the ceramic cavity 7 with the printed pattern is placed in a sintering furnace for sintering to make the silver paste solidification; take out the ceramic cavity 7, and apply tin paste solder on the surface of the solidified silver paste after cooling; place the shielding strip 15 on the tin paste solder, and clamp and press the shielding strip 15 with the first metal ring 12, the second metal ring 13 and the metal block 14; put the ceramic cavity 7 into the sintering furnace for the second sintering to obtain the shielding cover, the first sintering temperature is 650-700℃, and it is kept warm for half an hour, and then the heating is stopped and it is naturally cooled to room temperature, the second sintering temperature is 350-400℃, and it is kept warm for half an hour, and then the heating is stopped and it is naturally cooled to room temperature.
[0030] The above disclosure is merely one or more preferred embodiments of the present application and is not intended to limit the scope of the present application. A person skilled in the art will understand that all or part of the processes of the above embodiments and equivalent changes made in accordance with the claims of the present application are still within the scope of the present application.
Claims
1. A plasma tower type ICP structure shield sintering device, characterized in that: It includes a base, a rotating base, a dividing head, two guide rods, two movable bases, two locking units and a wire mesh. The rotating base is fixedly connected to the base and is located above the base. One end of the rotating base is rotatably connected to the dividing head. A ceramic cavity is placed on the dividing head. The two guide rods are fixedly connected to the base and are symmetrically distributed on both sides of the rotating base. The two movable bases are respectively slidably connected to the corresponding guide rods. The two locking units are respectively arranged on the corresponding movable bases. The wire mesh is fixedly connected to the two movable bases and is located above the ceramic cavity. The wire mesh has a shielding bar pattern.
2. The plasma tower type ICP structure shield sintering device according to claim 1, characterized in that: The locking unit includes two threaded rods and two handles. One ends of the two threaded rods respectively penetrate the corresponding moving seats, and the other ends of the two threaded rods are respectively fixedly connected to the corresponding handles.
3. A pressing unit, used in the plasma tower type ICP structure shield sintering device according to claim 1, characterized in that: It includes a placement seat, a first metal ring, a second metal ring and a metal block. The ceramic cavity is placed above the placement seat. The outer wall of the ceramic cavity is provided with a shielding strip. The first metal ring is sleeved on the outer wall of the ceramic cavity and the shielding strip. The second metal ring is sleeved on the outer wall of the ceramic cavity and the shielding strip. The metal block is placed above the ceramic cavity.
4. The pressing unit according to claim 3, wherein: The second metal ring is located above the first metal ring.