Silicon material feeding device

Abstract

The utility model discloses a silicon material feeding device, and relates to the technical field of crystalline silicon production. The device comprises a bearing structure with a hollow cavity, a silicon material storage barrel, a lifting structure and a butt joint structure, the silicon material storage barrel is arranged in the hollow cavity of the bearing structure; the silicon material storage barrel comprises a barrel body and a barrier plate; the barrel is used for storing silicon materials; the barrier plate is movably connected with the bottom of the barrel body and is connected with the lifting structure; the lifting structure drives the barrier plate to change the relative relation between the barrier plate and the bottom of the barrel, so that the bottom of the barrel is switched between a sealed state and a non-sealed state; the butt joint structure is arranged at the lower end of the bearing structure and used for being in butt joint with a main chamber sealing cover or an auxiliary chamber sealing cover of the single crystal furnace so that the silicon materials stored in the barrel can be put into the single crystal furnace when the bottom of the barrel is in a non-sealed state. According to the embodiment, one-time mass feeding can be realized, the crystal silicon production time is shortened, and the production efficiency is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of crystalline silicon production, in particular to a silicon material feeding device. Background Art

[0002] As the basic material for the semiconductor and photovoltaic industries, crystalline silicon is mainly produced by the Czochralski method through a single crystal furnace. The silicon material processing process of the single crystal furnace before pulling silicon rods mainly includes charging the feeding bucket, hanging the material, adding the material, vacuuming and chemicalizing the material. However, due to the limitation of the volume of the feeding bucket, each time before the single crystal furnace is vacuumed, the process of charging the feeding bucket, hanging the material and adding the material to the single crystal furnace needs to be repeated many times. Multiple feeding leads to a waste of manpower and time. In addition, the vacuuming process and chemicalizing process after adding the material (heating the silicon material from room temperature to the melting point to melt the silicon material) also take a long time. Therefore, there is an urgent need for a device that can reduce the production time of crystalline silicon. Utility Model Content

[0003] In view of this, an embodiment of the present invention provides a silicon material feeding device, which can achieve a large amount of material feeding at one time, shorten the crystalline silicon production time, and improve production efficiency.

[0004] To achieve the above-mentioned purpose, according to an embodiment of the present invention, a silicon material feeding device is provided, comprising: a bearing structure including a hollow cavity, a silicon material storage bucket, a lifting structure and a docking structure;

[0005] The silicon material storage barrel is arranged in the hollow cavity of the supporting structure;

[0006] The silicon material storage barrel comprises a barrel and a baffle;

[0007] The cylinder is used to store silicon materials;

[0008] The baffle plate is movably connected to the bottom of the cylinder, and the baffle plate is connected to the lifting structure;

[0009] The lifting structure drives the baffle plate to change the relative relationship between the baffle plate and the bottom of the cylinder, so that the bottom of the cylinder switches between a sealed state and an unsealed state;

[0010] The docking structure is arranged at the lower end of the supporting structure and is used to dock with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace so that the silicon material stored in the cylinder can be put into the single crystal furnace when the bottom of the cylinder is in an unsealed state.

[0011] One embodiment of the above-mentioned utility model has the following advantages or beneficial effects: material can be added by docking it with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace. The volume of the silicon material feeding device external to the single crystal furnace is not limited, and a large amount of material can be added at one time. There is no need to use a small-volume feeding barrel that needs to be added deep into the single crystal furnace. The problem of using a feeding barrel for feeding, which results in many feeding times and consumes a lot of manpower and time, is improved, and the crystalline silicon production time is greatly shortened and production efficiency is improved.

[0012] The further effects of the above-mentioned non-conventional optional manner will be described below in conjunction with specific embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The accompanying drawings are provided to facilitate a better understanding of the present invention and do not constitute an undue limitation of the present invention.

[0014] Figure 1 This is a schematic diagram of the first structure of the silicon material feeding device according to an embodiment of the present utility model;

[0015] Figure 2 This is a schematic diagram of the second structure of the silicon material feeding device according to an embodiment of the present utility model;

[0016] Figure 3 This is a structural schematic diagram of the docking structure in an open state according to an embodiment of the present utility model;

[0017] Figure 4 This is a structural schematic diagram of the docking structure in a closed state according to an embodiment of the present utility model;

[0018] Figure 5 This is a schematic diagram of the docking structure according to an embodiment of the present utility model and the sealing cover of the auxiliary chamber of the single crystal furnace;

[0019] Figure 6 Schematic diagram of the docking structure according to an embodiment of the present utility model and the sealing cover of the main chamber of the single crystal furnace;

[0020] Figure 7 This is another structural schematic diagram of the docking structure in an open state according to an embodiment of the present utility model;

[0021] Figure 8 This is a schematic diagram of feeding silicon material into a single crystal furnace using the first silicon material feeding device according to an embodiment of the present utility model;

[0022] Figure 9 This is a schematic diagram of feeding silicon material into a single crystal furnace using the second silicon material feeding device according to an embodiment of the present utility model;

[0023] Figure 10It is a flow chart of a silicon material adding method according to an embodiment of the present utility model.

[0024] Reference numerals:

[0025] 1-bearing structure; 101-hollow cavity; 102-air inlet; 103-air outlet; 104-exhaust port; 2-silicon material storage barrel; 201-cylinder; 202-blocking plate; 3-lifting structure; 301-first fixing member; 302-lifting member; 4-docking structure; 401-docking flange; 402-docking baffle; 403-hinge; 5-gravity member; 6-auxiliary chamber; 7-main chamber; 8-limiting part; 9-retractable material guide barrel; 91-telescopic joint; 92-connecting part; 9021-second fixing member; 9022-connecting member; 10-storage barrel fixing part; 11-heating structure. DETAILED DESCRIPTION

[0026] The following description of exemplary embodiments of the present invention is made in conjunction with the accompanying drawings, which include various details of the embodiments of the present invention to facilitate understanding. These details should be considered as merely exemplary. Therefore, those skilled in the art will recognize that various changes and modifications may be made to the embodiments described herein without departing from the scope and spirit of the present invention. Similarly, for the sake of clarity and conciseness, descriptions of well-known functions and structures are omitted in the following description.

[0027] It should be pointed out that, in the absence of conflict, the embodiments of the present invention and the technical features therein can be combined with each other.

[0028] Figure 1 This is a schematic diagram of the first structure of the silicon material feeding device according to an embodiment of the present utility model. Figure 2 This is a second structural schematic diagram of the silicon material feeding device according to an embodiment of the present utility model.

[0029] like Figure 1 and Figure 2 As shown, the silicon material feeding device of the embodiment of the present invention mainly includes: a supporting structure 1 including a hollow cavity 101, a silicon material storage bucket 2, a lifting structure 3 and a docking structure 4.

[0030] The silicon material storage barrel 2 is arranged in the hollow cavity 101 of the supporting structure 1; the silicon material storage barrel 2 includes a cylinder 201 and a blocking plate 202; the cylinder 201 is used to store silicon materials; the blocking plate 202 is movably connected to the bottom of the cylinder 201, and the blocking plate 202 is connected to the pulling structure 3.

[0031] Optionally, the silicon material storage barrel 2 may be made of quartz, graphite, carbon-carbon or other materials, but is not limited thereto.

[0032] A cover (not shown) is provided on the top of the supporting structure 1. When the silicon material feeding device is in use, the cover on the top of the supporting structure 1 is opened and silicon material is added to the silicon material storage barrel 2. After the silicon material is added, the cover is closed, making the silicon material feeding device sealed.

[0033] The lifting structure 3 may include a first fixing member 301 and a lifting member 302. The first fixing member 301 may be located on the cover of the support structure 1 or elsewhere on the support structure 1 to control the extension and retraction of the lifting member 302. The lifting member 302 is a retractable connection between the fixing portion and the blocking plate 202. The lifting structure 3 drives the blocking plate 202 to change the relative position between the blocking plate 202 and the bottom of the cylinder 201, thereby switching the bottom of the cylinder 201 between a sealed state and an unsealed state.

[0034] Specifically, when silicon material is stored in the silicon material storage barrel 2, the baffle plate 202 is tightly connected to the bottom of the cylinder 201 so that the bottom of the cylinder 201 is in a sealed state; when the silicon material storage barrel 2 is used to feed the single crystal furnace, under the control of the first fixing member 301, the pulling member 302 drives the baffle plate 202 to move so that the baffle plate 202 is separated from the bottom of the cylinder 201, and the bottom of the cylinder 201 is switched from a sealed state to a non-sealed state, and the silicon material can flow into the single crystal furnace from the bottom of the cylinder 201, thereby realizing the use of a silicon material feeding device to feed the single crystal furnace; after the feeding is completed, under the control of the first fixing member 301, the pulling member 302 drives the baffle plate 202 to move back to a position tightly connected to the bottom of the cylinder 201, and the bottom of the cylinder 201 is switched from a non-sealed state to a sealed state.

[0035] Furthermore, in the process of adding materials to the single crystal furnace, the length of the pulling member 302 can be controlled to control the size of the gap between the blocking plate 202 and the bottom of the cylinder 201, thereby adjusting the outflow rate of the silicon material in the cylinder 201 to prevent a large amount of silicon material from falling in a short period of time and causing safety hazards.

[0036] Alternatively, as Figure 1 and Figure 2 As shown, a gravity member 5 may also be provided in the blocking plate 202 or the lifting structure 3. When the blocking plate 202 needs to be moved downward, the gravity member 5 can rely on its own gravity to pull the blocking plate 202 and the lifting member 302 downward to the desired position.

[0037] The gravity member 5 can be arranged in a variety of ways, such as being arranged on any surface of the blocking plate 202; being connected to the blocking plate 202 at one end and to the lifting member 302 at the other end; being arranged at any position of the lifting member 302, etc. As an example, Figure 1 and Figure 2, a possible arrangement of the gravity member 5 is shown, that is, the gravity member 5 is arranged so that one end is connected to the blocking plate 202 and the other end is connected to the lifting member 302 .

[0038] In addition, without providing a gravity member 5, a plate with a certain weight can be directly used as the blocking plate 202, so that when the blocking plate 202 needs to be moved downward, the lifting member 302 can be directly pulled downward to the desired position by the blocking plate 202's own gravity.

[0039] The supporting structure 1 and the silicon material storage bucket 2 disposed within the hollow cavity 101 may have various shapes, including but not limited to rectangular, circular, and U-shaped. It will be appreciated that the relatively large volume of the supporting structure 1 and the silicon material storage bucket 2 allows for one-time loading and feeding of the silicon material via the silicon material feeding device, without being limited by the number of feedings, thereby significantly reducing waste of human resources and time.

[0040] like Figure 1 and Figure 2 As shown, the docking structure 4 is disposed at the lower end of the supporting structure 1 and is configured to dock with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace, thereby allowing silicon material stored in the cylinder 201 to be fed into the single crystal furnace while the bottom of the cylinder 201 is unsealed. Furthermore, the docking structure 4 may also dock with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace via other intermediate devices, which are not specifically limited herein.

[0041] like Figure 5 As shown, the docking structure 4 can be docked with the auxiliary chamber sealing cover of the single crystal furnace; in addition, as shown Figure 6 As shown, before the silicon material feeding device is docked with the single crystal furnace, the auxiliary chamber 6 of the single crystal furnace can be removed so that the docking structure 4 can be directly docked with the main chamber sealing cover of the single crystal furnace.

[0042] Furthermore, if Figure 3 and Figure 4 As shown, the docking structure 4 includes a docking flange 401 and a docking baffle 402 for sealing the bottom of the supporting structure 1. The docking baffle 402 is arranged in the middle of the docking flange 401 and has two states: open and closed.

[0043] Alternatively, as Figure 3 and Figure 7 As shown, the docking structure 4 may further include a hinge 403 , and the docking baffle 402 may be connected to the docking flange 401 via the hinge 403 and flipped via the hinge 403 to achieve switching between the open and closed states.

[0044] Before the silicon material feeding device is docked with the single crystal furnace, the docking baffle 402 may be in a closed state. Figure 5 or Figure 6As shown, after the silicon material feeding device is docked with the single crystal furnace, the above-mentioned docking baffle 402 releases the seal on the bottom of the above-mentioned supporting structure 1 under the drive of an external driving force, that is, after the docking baffle 402 is switched from a closed state to an open state, the hollow cavity 101 of the above-mentioned supporting structure 1 is connected with the above-mentioned single crystal furnace, so that the silicon material feeding device can put the silicon material stored in the cylinder 201 into the single crystal furnace.

[0045] The docking baffle 402 may be connected to a device providing an external driving force via a wired or wireless method, and the docking baffle 402 may be switched between an open state and a closed state by the driving of the external driving force.

[0046] Furthermore, if Figure 3 、 Figure 4 and Figure 7 As shown, the docking panel 402 includes two matching docking doors.

[0047] It is understandable that the opening direction of the docking door when it is opened can be toward the inside of the supporting structure 1, and can also be toward the inside of the single crystal furnace. Figure 3 and Figure 7 , assuming that the upper surface of the docking flange 401 is the side facing the inside of the bearing structure 1, then Figure 3 In the embodiment, the opening direction of the docking door can be toward the inside of the supporting structure 1; Figure 7 In the embodiment, the opening direction of the docking door can be toward the interior of the single crystal furnace.

[0048] like Figure 3 and Figure 7 As shown, the contact points of the two docking doors are provided with inclined surfaces inclined in the same direction. When the docking doors are closed, the inclined surfaces of the two docking doors are in close contact, ensuring the airtightness of the hollow cavity 101. When the docking doors are opened, the two docking doors open in sequence, ensuring that the opening and closing are not affected.

[0049] It should be noted that the structure of the docking baffle 402 is not limited to the structure including two matching docking doors, and other structures that can achieve electrical connection between the silicon material feeding device and the interior of the single crystal furnace can also be used.

[0050] Optionally, the docking structure 4 may further include a sealing ring. The sealing ring may be disposed around the exterior of the docking flange 401 and protrude from the lower surface of the docking flange 401. The diameter of the docking flange 401 may be the same as the diameter of the main chamber sealing cover and / or the secondary chamber sealing cover of the single crystallization furnace. After the docking structure 4 is docked with the main chamber sealing cover of the single crystallization furnace, the sealing ring may surround the docking flange 401 and the main chamber sealing cover, thereby better ensuring the airtightness of the hollow cavity 101 and the interior of the single crystallization furnace after the docking baffle 402 is opened.

[0051] In an optional embodiment, as Figure 1As shown, a limiting portion 8 is provided at the upper end of the outer wall of the silicon material storage barrel 2 .

[0052] The lifting structure 3 cooperates with the blocking plate 202 to limit the position of the cylinder 201 in the supporting structure 1; Figure 8 As shown, when the lifting structure 3 drives the baffle plate 202 downward, the cylinder 201 follows the baffle plate 202 into the single crystal furnace. After the stopper 8 reaches the bottom of the support structure 1, it is restrained by the bottom of the support structure 1, preventing the cylinder 201 from completely separating from the support structure 1. After the stopper 8 is restrained by the bottom of the support structure 1, the lifting structure 3 drives the baffle plate 202 downward, leaving the bottom of the cylinder 201 in an unsealed state. The bottom of the cylinder 201 is located above the quartz crucible in the main chamber 7 of the single crystal furnace. The silicon material stored in the cylinder 201 flows into the quartz crucible through the gap between the baffle plate 202 and the bottom of the cylinder 201, completing the silicon material feeding process.

[0053] When the silicon material stored in the cylinder 201 flows into the quartz crucible through the gap between the blocking plate 202 and the bottom of the cylinder 201, as the silicon material inside the quartz crucible continues to increase, the quartz crucible can be controlled to move downward or the blocking plate 202 can be controlled to move upward until all the silicon material stored in the cylinder 201 is added to the quartz crucible, thereby improving the safety of the feeding process.

[0054] The diameter of the baffle plate 202 is larger than the diameter of the silicon material storage barrel 2 and smaller than the diameter of the bottom opening of the supporting structure 1. Specifically, the baffle plate 202 can be located below the cylinder 201. Under the traction of the lifting structure 3, the baffle plate 202 is subjected to an upward pulling force. The diameter of the baffle plate 202 is larger than the diameter of the silicon material storage barrel 2, so that the baffle plate 202 supports the cylinder 201. After the silicon material feeding device and the single crystal furnace are docked and the docking structure 4 releases the seal on the bottom of the supporting structure 1, the first fixing member 301 can control the extension of the lifting member 302. Driven by the lifting member 302, because the diameter of the baffle plate 202 is smaller than the diameter of the bottom opening of the supporting structure 1, the baffle plate 202 and the cylinder 201 can move downward through the supporting structure 1 and into the single crystal furnace until the stop portion 8 is limited by the bottom of the supporting structure 1, at which point the cylinder 201 stops moving downward.

[0055] Alternatively, as Figure 8 As shown, the upper end of the outer wall of the silicon material storage barrel 2 is provided with a limit portion 8. When the two docking doors are opened, the two docking doors limit the limit portion 8. In this case, the diameter of the blocking plate 202 should be smaller than the diameter of the docking doors so that the blocking plate 202 and the silicon material storage barrel 2 can pass through the open docking doors.

[0056] In an optional embodiment, as Figure 2 As shown, the silicon material feeding device may further include a retractable material introduction cylinder 9. One end of the retractable material introduction cylinder 9 is disposed at the bottom of the silicon material storage barrel 2; after the docking structure 4 docks with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace, the retractable material introduction cylinder 9 can be extended into the single crystal furnace.

[0057] The telescopic feed barrel 9 comprises multiple layers of nested telescopic sections 91 and connecting portions 92. The connecting portions 92 connect to each of the telescopic sections 91, and the length of the connecting portions 92 drives the expansion and contraction of the telescopic sections 91. The diameter of each of the nested telescopic sections 91 increases from the inside to the outside. The inner telescopic section 91 can be nested within the adjacent outer telescopic section 91, and the connecting portions 92 can drive the inner telescopic section 91 to extend from the adjacent outer telescopic section 91. Each telescopic section 91 is a hollow sleeve. The number and length of the telescopic sections 91 can be adjusted based on actual conditions.

[0058] Specifically, if Figure 9 As shown, after the docking structure 4 is docked with the sealing cover of the main chamber or the auxiliary chamber of the single crystal furnace, the seal at the bottom of the supporting structure 1 is released, and the connection part 92 can be extended under the drive of an external force, thereby driving the telescopic joint 91 to extend into the interior of the single crystal furnace. When the connection part 92 drives the innermost telescopic joint 91 to extend into the quartz crucible of the single crystal furnace, the connection part 92 stops extending, and the silicon material stored in the silicon material storage barrel 2 can flow into the quartz crucible through multiple extended telescopic joints 91; after the material is added, the connection part 92 is driven to shorten by an external force, thereby driving the telescopic joint 91 to retract into the interior of the supporting structure 1 and reset to the state before the material is added. Among them, the height of the discharge port of the telescopic joint 91 from the quartz crucible can be adjusted by controlling the length of the connection part 92 to prevent sputtering when the silicon material falls into the quartz crucible.

[0059] Alternatively, as Figure 2 As shown, the connecting portion 92 may further include a second fixing member 9021 and a connecting member 9022. Specifically, for each telescopic section 91, the second fixing member 9021 is disposed at the lower opening of the telescopic section 91. The lower opening of the telescopic section 91 may be concave inward to form an inclined surface, thereby allowing the second fixing member 9021, whose diameter is smaller than the diameter of the telescopic section 91 but larger than the diameter of the opening of the telescopic section 91, to be disposed on the inclined surface of the lower opening of the telescopic section 91. The second fixing member 9021 can prevent the telescopic section 91 from moving downward due to its own weight. The connecting member 9022 is connected to the second fixing member 9021, and controls the up and down movement of the second fixing member 9021 by its own expansion and contraction, thereby driving the telescopic section 91 to expand and contract.

[0060] Furthermore, the lower end of the telescopic section 91 in the innermost portion of the telescopic material introduction barrel 9 may be provided with an umbrella-shaped discharge port to prevent the silicon material from splashing around during the feeding process. The umbrella-shaped discharge port may be made of high-temperature resistant material, such as quartz.

[0061] like Figure 2 As shown, the silicon material feeding device includes a structure of a retractable material introduction cylinder 9, and the silicon material feeding device may further include a storage barrel fixing portion 10. The cylinder 201 is fixed to the supporting structure 1 through the storage barrel fixing portion 10.

[0062] In this case, the silicon material stored in the cylinder 201 can flow into the quartz crucible of the single crystal furnace through the retractable material guide tube 9. Therefore, the silicon material storage barrel 2 inside the supporting structure 1 does not need to move up and down. In order to ensure the stability of the structure, the silicon material storage barrel 2 can be fixed to the supporting structure 1 through the storage barrel fixing part 10 so that the silicon material storage barrel 2 will not change its position relative to the supporting structure 1.

[0063] In addition, the silicon material feeding device includes a retractable material introduction cylinder 9, and the bottom of the silicon material storage barrel 2 is a necked structure; the blocking plate 202 is arranged in the silicon material storage barrel 2; the necked structure cooperates with the blocking plate 202 to seal the bottom of the silicon material storage barrel 2.

[0064] The bottom of the silicon material storage barrel 2 is a necked structure. The diameter of the blocking plate 202 should be smaller than the maximum diameter of the cylinder 201 and larger than the diameter of the necked structure at the bottom of the cylinder 201, so that the blocking plate 202 can move up and down inside the cylinder 201. When the blocking plate 202 moves down to the necked structure, since the diameter of the necked structure is smaller than the diameter of the blocking plate 202, the necked structure prevents the blocking plate 202 from continuing to move down, so that the two cooperate with each other to seal the bottom of the silicon material storage barrel 2.

[0065] Specifically, when silicon material is added to the silicon material feeding device, the blocking plate 202 cooperates with the constriction structure at the bottom of the cylinder 201 to seal the bottom of the silicon material storage barrel 2, limiting the silicon material added to the inside of the cylinder 201 to prevent the silicon material from flowing to the bottom of the supporting structure 1; when the silicon material is added to the single crystal furnace through the silicon material feeding device, the docking structure 4 is opened, and the retractable material guide cylinder 9 is extended to the top of the quartz crucible of the single crystal furnace. Under the control of the first fixing member 301, the pulling member 302 is shortened and drives the blocking plate 202 to move upward, so that the blocking plate 202 is The plate 202 is separated from the bottom of the cylinder 201, and the bottom of the cylinder 201 is switched from a sealed state to an unsealed state. The silicon material can flow into the single crystal furnace from the gap between the bottom of the cylinder 201 and the blocking plate 202 via the retractable material guide cylinder 9, thereby realizing the use of a silicon material feeding device to feed the single crystal furnace; after the feeding is completed, under the control of the first fixing member 301, the pulling member 302 extends and drives the blocking plate 202 to move down again to a position tightly connected to the bottom of the cylinder 201, and the bottom of the cylinder 201 is switched from an unsealed state to a sealed state.

[0066] It should be noted that the structure for adding the silicon material in the silicon material storage barrel 2 into the quartz crucible of the single crystal furnace is not limited to the structures of the above two embodiments. Any structure that can realize the addition of the silicon material in the silicon material storage barrel 2 into the quartz crucible of the single crystal furnace can be set, such as setting a feeding tube with a piston at the bottom of the cylinder 201.

[0067] In an optional embodiment, as Figure 1 and Figure 2 As shown, the silicon material feeding device may further include: a heating structure 11 disposed in the supporting structure 1. The heating structure 11 is disposed around the silicon material storage barrel 2 and is used to heat the silicon material in the silicon material storage barrel 2.

[0068] The heating structure 11 may be a resistance heater, a capacitance heater, a radiation heater, a microwave heater, an infrared heater, etc., but is not limited thereto.

[0069] When the silicon material heating device is provided with the heating structure 11, silicon material at room temperature can be fed into the silicon material feeding device, where the silicon material in the silicon material storage barrel 2 is preheated by the heating structure 11. The preheated silicon material can then be fed into the single crystal furnace, allowing the temperature of the single crystal furnace to be maintained at the melting point of the silicon material during the melting process. This eliminates the need to heat the silicon material from room temperature to its melting point, significantly shortening the melting time of the single crystal furnace.

[0070] It is understood that the method for preheating the silicon material is not limited to providing a heat dissipation structure in the silicon material feeding device. Any method that can achieve preheating of the silicon material outside the single crystal furnace can be used. For example, if the heating structure 11 is not provided in the silicon material feeding device, the preheated silicon material can be directly fed into the silicon material feeding device and fed into the single crystal furnace through the silicon material feeding device.

[0071] The melting point of silicon material is 1410℃-1420℃. Generally, when melting silicon material, it is necessary to heat the room temperature silicon material to 1420℃ to ensure that the silicon material is completely melted. In the process of heating the room temperature silicon material to 1420℃, the heat of heating per unit mass of silicon material is equal to the specific heat capacity × temperature difference, that is, 0.710kJ / (kgK) × 1420K × 1kg = 994kJ. The heat of melting is equal to the mass × the heat of melting, that is, 1810kJ / kg × 1kg = 1810kJ. Since the melting time of silicon material in the single crystal furnace is difficult to shorten, the silicon material can be preheated outside the single crystal furnace to raise the silicon material temperature to a temperature below the silicon material melting point. The preheated silicon material is then placed in the single crystal furnace for melting, thereby shortening the time the silicon material takes to heat up in the single crystal furnace and thus shortening the total melting time of the single crystal furnace.

[0072] The embodiment of the present invention sets a heating structure 11 in the hollow cavity 101 of the supporting structure 1, or directly feeds preheated silicon material into the silicon material feeding device, so that the silicon material can be preheated before being fed into the single crystal furnace, and then the preheated silicon material is directly added to the single crystal furnace. The single crystal furnace can be kept at a temperature that can melt the silicon material without repeated heating and cooling, which greatly shortens the preparation time of crystalline silicon, reduces the baking time of the quartz crucible in the single crystal furnace, reduces the oxygen released when the quartz crucible is melted, thereby reducing the oxygen content in the silicon melt liquid, further reducing the oxygen content in the finished crystalline silicon rod, and at the same time increasing the life of the quartz crucible.

[0073] In an optional embodiment, the hollow cavity 101 may be filled with a heat-insulating material to achieve heat insulation of the silicon material in the cylinder 201 .

[0074] In an optional embodiment, the supporting structure 1 may be provided with an air inlet 102 , an air outlet 103 and / or an air extraction port 104 . The air inlet 102 , the air outlet 103 or the air extraction port 104 may be provided at any position of the supporting structure 1 .

[0075] Furthermore, the air inlet 102 , the air outlet 103 and the air extraction port 104 may be the same hole or the same opening provided on the supporting structure 1 .

[0076] The following describes in detail how to use the air inlet 102, the air outlet 103 and / or the air extraction port 104 when adding silicon material using silicon material adding devices of different structures or different silicon material adding processes through several examples:

[0077] The first method uses a silicon material feeding device equipped with a heating structure 11 to feed the single crystal furnace. In this silicon material feeding device, the support structure 1 is provided with an air extraction port 104 and an air inlet 102. The air outlet 103 may or may not be provided. During use, the silicon material feeding device is first added to the silicon material to be preheated. The silicon material feeding device is then evacuated through the air extraction port 104 to preheat the silicon material under a low vacuum state. After preheating is complete, the docking structure 4 of the silicon material feeding device is docked with the main chamber sealing cover of the single crystal furnace. Argon gas is then introduced into the silicon material heating device through the air inlet 102 to equalize the atmosphere in the silicon material heating device with that in the single crystal furnace. The air pressure in the silicon material heating device is then adjusted through the air extraction port 104 to equal or approximate the air pressure in the silicon material heating device with that in the single crystal furnace. The docking structure 4 is then opened, and the preheated silicon material in the cylinder 201 is added to the quartz crucible of the single crystal furnace. After the feeding is complete, the docking structure 4 is closed, the argon gas is recovered through the air outlet 103 or the air extraction port 104, and the air inlet 102 is opened to equalize the air pressure in the silicon material heating device with that in the outside air pressure, facilitating the subsequent opening of the cover on top of the supporting structure 1.

[0078] The second method is to use a silicon material feeding device that is not equipped with a heating structure 11 to feed the single crystal furnace. In this silicon material feeding device, an air inlet 102 is provided on the supporting structure 1. The preheated silicon material is put into the silicon material feeding device. The docking structure 4 is docked with the auxiliary chamber sealing cover of the single crystal furnace, the main chamber sealing cover is kept closed, the docking structure 4 and the auxiliary chamber sealing cover are opened, and the air pressure in the auxiliary chamber 6 and the silicon material feeding device is adjusted by vacuuming connected to the auxiliary chamber 6 so that the air pressure in the silicon material heating device is the same or similar to the air pressure in the single crystal furnace. Then, the main chamber sealing cover is opened, and the preheated silicon material stored in the cylinder 201 is added to the quartz crucible of the single crystal furnace. After the feeding is completed, the main chamber sealing cover and the auxiliary chamber sealing cover are closed, and the air inlet 102 is opened to make the air pressure in the silicon material heating device the same as the external air pressure, so as to facilitate the subsequent opening of the cover on the top of the supporting structure 1.

[0079] The third method is to use a silicon material feeding device provided with a heating structure 11 to feed the single crystal furnace. In the silicon material feeding device, an exhaust hole and an air inlet 102 are provided on the supporting structure 1. First, the silicon material to be preheated is put into the silicon material feeding device, and the silicon material to be preheated is preheated under normal pressure. Then, the docking structure 4 is docked with the main chamber sealing cover of the single crystal furnace. The air pressure in the sub-chamber 6 and the silicon material feeding device is adjusted through the exhaust port 104 so that the air pressure in the silicon material heating device is the same or similar to the air pressure in the single crystal furnace. The main chamber sealing cover is opened, and the preheated silicon material in the cylinder 201 is added to the quartz crucible of the single crystal furnace. After the feeding is completed, the main chamber sealing cover is closed, and the air inlet 102 is opened to make the air pressure in the silicon material heating device the same as the external air pressure, so as to facilitate the subsequent opening of the cover on the top of the supporting structure 1.

[0080] The fourth method uses a silicon material feeding device without a heating structure 11 to feed the single crystal furnace. In this silicon material feeding device, the support structure 1 is provided with an air inlet 102, an air outlet 103, and an air extraction port 104. The silicon material to be preheated is placed into the silicon material feeding device. High-temperature argon gas is introduced into the support structure 1 through the air inlet 102. The high-temperature argon gas heats the silicon material in the cylinder 201 and then flows out through the air outlet 103. After preheating is complete, the air pressure in the silicon material heating device is adjusted through the air extraction port 104 to ensure that the air pressure there is the same or similar to that in the single crystal furnace. Then, the docking structure 4 is opened, and the preheated silicon material in the cylinder 201 is added to the quartz crucible of the single crystal furnace. After the addition is completed, the docking structure 4 is closed, the argon gas is recovered through the gas outlet 103 or the gas extraction port 104, and the gas inlet 102 is opened to make the gas pressure in the silicon material heating device the same as the external pressure, so as to facilitate the subsequent opening of the cover on the top of the supporting structure 1.

[0081] By setting an exhaust port 104 on the supporting structure 1, the air pressure in the silicon material feeding device can be adjusted so that the air pressure in the silicon material feeding device is the same as or close to the air pressure in the single crystal furnace, which facilitates the opening of the docking structure 4 and avoids affecting the air pressure in the single crystal furnace. After the feeding is completed, there is no need to readjust the air pressure in the single crystal furnace.

[0082] By providing air inlet holes 102 on the support structure 1, the atmosphere in the silicon material feeding device can be adjusted to be the same as that in the single crystal furnace, thus preventing the introduction of other gases into the single crystal furnace. Furthermore, after the silicon material is added, the pressure in the silicon material feeding device can be equalized to the pressure outside, making it easier to open the top cover of the support structure 1.

[0083] By providing the gas outlet 103 on the supporting structure 1 , the inert gas in the silicon material feeding device can be recovered, so that the inert gas can be recycled and waste can be avoided.

[0084] It should be noted that the above examples are merely illustrative and do not constitute a limitation on the operational process of the silicon material feeding device of the present invention. Furthermore, the use of the silicon material feeding device to feed the single crystal furnace is not limited to the above examples. When adjusting the internal atmosphere of the silicon material feeding device, the internal atmosphere is not limited to argon; any inert gas atmosphere can be used. Preferably, the internal atmosphere of the silicon material feeding device can be the same as the atmosphere within the single crystal furnace.

[0085] According to the silicon material feeding device of the embodiment of the present invention, the silicon material feeding device is connected to the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace for feeding. The volume of the silicon material feeding device outside the single crystal furnace is not limited, and a large amount of feeding can be achieved at one time. There is no need to use a small-volume feeding barrel that needs to be added deep into the single crystal furnace for feeding. This improves the problem of using a feeding barrel for feeding, which leads to multiple feeding times and consumes a lot of manpower and time, greatly shortens the crystalline silicon production time, and improves production efficiency.

[0086] By arranging a heating structure 11 in the silicon material feeding device or directly feeding the preheated silicon material into the silicon material feeding device, the time for charging in the single crystal furnace can be effectively shortened and the production efficiency can be improved. At the same time, by preheating the silicon material, the surface of the granular silicon can be removed, and the silicon jumping phenomenon during charging can be reduced. At the same time, the time for the quartz crucible in the single crystal furnace to be baked at high temperature is shortened, the service life of the quartz crucible is increased, and the oxygen released during charging in the quartz crucible is reduced, thereby reducing the oxygen content in the silicon melt and improving the quality of the crystalline silicon product.

[0087] Figure 10 Schematic diagram of the process of adding silicon material according to the embodiment of the present invention. Figure 10 As shown, the embodiment of the present invention further provides a method for adding silicon material, which uses any of the silicon material adding devices described above to add silicon material, including the following steps A1 to A3:

[0088] Step A1, adding silicon material into the silicon material feeding device;

[0089] Step A2: docking the silicon material feeding device with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace;

[0090] Step A3: feeding the silicon material stored in the silicon material feeding device into the single crystal furnace.

[0091] Specifically, all the silicon material required for a single batch of crystalline silicon production in a single crystallization furnace is placed into the silicon material storage barrel 2 of the silicon material feeding device. At this point, no gap exists between the baffle plate 202 and the bottom of the cylinder 201 of the silicon material storage barrel 2, and the bottom of the cylinder 201 is sealed. The docking structure 4 at the lower end of the support structure 1 is docked with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystallization furnace. Driven by an external driving force, the docking baffle 402 seals the bottom of the support structure 1. The lifting structure 3 drives the baffle plate 202, changing the relative relationship between the baffle plate 202 and the bottom of the cylinder 201, so that a gap appears between the baffle plate 202 and the bottom of the cylinder 201. The silicon material stored in the cylinder 201 flows through the gap into the quartz crucible of the single crystallization furnace.

[0092] In an optional embodiment of the present invention, after the above-mentioned silicon material feeding device is docked with the main chamber sealing cover or the sub-chamber sealing cover of the single crystal furnace, the above-mentioned method further includes: adjusting the air pressure in the above-mentioned silicon material feeding device so that the air pressure in the above-mentioned silicon material feeding device is the same as the air pressure in the above-mentioned single crystal furnace.

[0093] As an example, after the docking structure 4 is initially docked with the main chamber sealing cover of the single crystal furnace, the docking structure 4 is kept closed first, and the air pressure in the silicon material feeding device is adjusted through the exhaust port 104 set in the supporting structure 1 so that the air pressure in the above-mentioned silicon material feeding device is the same as the air pressure in the above-mentioned single crystal furnace, and then the docking structure 4 is opened.

[0094] As another example, after the docking structure 4 is initially docked with the sub-chamber sealing cover of the single crystal furnace, the docking structure 4 is opened, and the air pressure in the silicon material feeding device is adjusted by the vacuum device connected to the sub-chamber 6 so that the air pressure in the above-mentioned silicon material feeding device is the same as the air pressure in the above-mentioned single crystal furnace, and then the main chamber sealing cover is opened.

[0095] By adjusting the air pressure in the silicon material feeding device, the problem of different air pressures on both sides of the docking structure 4 causing the docking structure 4 to be difficult to open is avoided. At the same time, the process of readjusting the air pressure in the single crystal furnace after feeding is reduced, shortening the crystalline silicon preparation time and improving production efficiency.

[0096] In an optional embodiment of the present invention, after the silicon material is fed into the silicon material feeding device, the method further comprises: preheating the fed silicon material by the silicon material feeding device.

[0097] When a heating structure 11 is provided in the silicon material feeding device, silicon material at room temperature can be fed into the silicon material feeding device, preheated by the heating structure 11, and then the preheated silicon material is fed into the single crystal furnace, which can effectively shorten the time for the single crystal furnace to melt the material and improve production efficiency. At the same time, by preheating the silicon material, the surface of the granular silicon can be removed, and the silicon jumping phenomenon during the melting period can be reduced. At the same time, the time for the quartz crucible in the single crystal furnace to be baked at high temperature is shortened, the service life of the quartz crucible is increased, and the oxygen released during the melting of the quartz crucible is reduced, thereby reducing the oxygen content in the silicon melt and improving the quality of the crystalline silicon product.

[0098] In addition, even if the heating structure 11 is not provided in the silicon material feeding device, the silicon material at room temperature can be preheated by filling the silicon material feeding device with high-temperature inert gas, or the preheated silicon material can be directly added to the silicon material feeding device.

[0099] The silicon material may be preheated by heating it to 80°C to 1400°C. Preferably, the silicon material may be preheated by heating it to 300°C to 700°C. For example, the silicon material may be preheated to 80°C, 300°C, 500°C, 700°C, 1000°C, or 1400°C.

[0100] According to the silicon material feeding method of the embodiment of the present invention, silicon material can be added to the single crystal furnace through the silicon material feeding device. Since the volume of the silicon material feeding device is not limited, a large amount of material can be added at one time. There is no need to use a small-volume feeding barrel that needs to be added deep into the single crystal furnace. This improves the problem of using a feeding barrel to add material, which leads to multiple feeding times and consumes a lot of manpower and time. It greatly shortens the crystalline silicon production time and improves production efficiency.

[0101] In summary, the embodiments of the present invention provide the following technical solutions:

[0102] Technical Solution 1: A silicon material feeding device, comprising: a supporting structure 1 including a hollow cavity 101, a silicon material storage bucket 2, a lifting structure 3 and a docking structure 4;

[0103] The silicon material storage barrel 2 is disposed in the hollow cavity 101 of the supporting structure 1;

[0104] The silicon material storage barrel 2 includes a barrel 201 and a baffle 202;

[0105] The cylinder 201 is used to store silicon materials;

[0106] The blocking plate 202 is movably connected to the bottom of the cylinder 201, and the blocking plate 202 is connected to the lifting structure 3;

[0107] The lifting structure 3 drives the blocking plate 202 to change the relative relationship between the blocking plate 202 and the bottom of the cylinder 201, so that the bottom of the cylinder 201 switches between a sealed state and an unsealed state;

[0108] The docking structure 4 is provided at the lower end of the supporting structure 1 and is used to dock with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace so that the silicon material stored in the cylinder 201 can be put into the single crystal furnace when the bottom of the cylinder 201 is in an unsealed state.

[0109] Technical solution 2: The silicon material feeding device according to technical solution 1,

[0110] The upper end of the outer wall of the silicon material storage barrel 2 is provided with a limiting portion 8;

[0111] The lifting structure 3 cooperates with the blocking plate 202 to limit the position of the cylinder 201 in the supporting structure 1;

[0112] When the lifting structure 3 drives the baffle plate 202 downward, the cylinder 201 follows the baffle plate 202 into the single crystal furnace;

[0113] After the limiting portion 8 reaches the bottom of the supporting structure 1, the limiting portion 8 is limited by the bottom of the supporting structure 1 to prevent the cylinder 201 from completely separating from the supporting structure 1;

[0114] After the limiting portion 8 is limited by the bottom of the supporting structure 1 , the lifting structure 3 drives the blocking plate 202 downward, so that the bottom of the cylinder 201 is in a non-sealed state.

[0115] Technical solution 3: The silicon material feeding device according to technical solution 2,

[0116] The diameter of the blocking plate 202 is larger than the diameter of the silicon material storage barrel 2 and smaller than the diameter of the bottom opening of the supporting structure 1;

[0117] The blocking plate 202 supports the cylinder 201 .

[0118] Technical Solution 4: The silicon material feeding device according to Technical Solution 1 further comprises: a retractable material introduction cylinder 9, wherein:

[0119] One end of the retractable material guide cylinder 9 is arranged at the bottom of the silicon material storage barrel 2;

[0120] After the docking structure 4 is docked with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace, the retractable material guiding cylinder 9 can be extended into the single crystal furnace.

[0121] Technical solution 5: The silicon material feeding device according to technical solution 4,

[0122] The telescopic guide barrel 9 includes multiple layers of nested telescopic sections 91 and connecting sections 92;

[0123] The connecting portion 92 is connected to each of the telescopic joints 91 , and the telescopic joints 91 are extended or retracted by adjusting the length of the connecting portion 92 .

[0124] Technical solution 6: The silicon material feeding device according to technical solution 5,

[0125] An umbrella-shaped discharge port is provided at the lower end of the innermost telescopic section 91 of the telescopic feeding cylinder 9 .

[0126] Technical solution 7: The silicon material feeding device according to any one of technical solutions 1 to 6,

[0127] The docking structure 4 includes a docking flange 401 and a docking baffle 402 for sealing the bottom of the bearing structure 1;

[0128] After the docking baffle 402 releases the seal on the bottom of the supporting structure 1 under the driving force of the external driving force, the hollow cavity 101 of the supporting structure 1 is connected with the single crystal furnace.

[0129] Technical Solution 8: According to the silicon material feeding device described in Technical Solution 7, the docking baffle 402 includes two matching docking doors;

[0130] A limiting portion 8 is provided on the upper end of the outer wall of the silicon material storage barrel 2 . After the two docking doors are opened, the two docking doors limit the limiting portion 8 .

[0131] Technical Solution 9: The silicon material feeding device according to any one of Technical Solutions 4-6 further includes: a storage barrel fixing portion 10;

[0132] The cylinder 201 is fixed to the supporting structure 1 through the storage bucket fixing portion 10 .

[0133] Technical solution 10: The silicon material feeding device according to any one of technical solutions 4-6,

[0134] The bottom of the silicon material storage barrel 2 is a constricted structure;

[0135] The blocking plate 202 is disposed in the silicon material storage barrel 2;

[0136] The necking structure cooperates with the blocking plate 202 to seal the bottom of the silicon material storage barrel 2 .

[0137] Technical Solution 11: The silicon material feeding device according to Technical Solution 1,

[0138] The supporting structure 1 is provided with an air inlet 102;

[0139] and / or,

[0140] The supporting structure 1 is provided with an air outlet 103 .

[0141] Technical Solution 12: The silicon material feeding device according to any one of Technical Solutions 1 to 6 further includes: a heating structure 11 disposed in the supporting structure 1, wherein:

[0142] The heating structure 11 is disposed around the silicon material storage barrel 2 and is used to heat the silicon material in the silicon material storage barrel 2 .

[0143] The above specific embodiments do not limit the scope of protection of this utility model. Those skilled in the art will understand that various modifications, combinations, sub-combinations, and substitutions may occur depending on design requirements and other factors. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model shall be included in the scope of protection of this utility model.

Claims

1. A silicon material feeding device, characterized in that: include: A bearing structure (1) comprising a hollow cavity (101), a silicon material storage bucket (2), a lifting structure (3) and a docking structure (4); The silicon material storage barrel (2) is arranged in the hollow cavity (101) of the supporting structure (1); The silicon material storage barrel (2) comprises a barrel (201) and a baffle (202); The cylinder (201) is used for storing silicon materials; The blocking plate (202) is movably connected to the bottom of the cylinder (201), and the blocking plate (202) is connected to the lifting structure (3); The lifting structure (3) drives the blocking plate (202) to change the relative relationship between the blocking plate (202) and the bottom of the cylinder (201), so that the bottom of the cylinder (201) switches between a sealed state and a non-sealed state; The docking structure (4) is arranged at the lower end of the bearing structure (1) and is used to dock with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace so as to allow the silicon material stored in the cylinder (201) to be put into the single crystal furnace when the bottom of the cylinder (201) is in a non-sealed state.

2. The silicon material feeding device according to claim 1, characterized in that: A limiting portion (8) is provided at the upper end of the outer wall of the silicon material storage barrel (2); The lifting structure (3) cooperates with the blocking plate (202) to limit the position of the cylinder (201) in the bearing structure (1); When the lifting structure (3) drives the baffle plate (202) downward, the cylinder (201) follows the baffle plate (202) and enters the single crystal furnace; After the limiting portion (8) reaches the bottom of the bearing structure (1), the limiting portion (8) is limited by the bottom of the bearing structure (1) to prevent the cylinder (201) from completely separating from the bearing structure (1); After the limiting portion (8) is limited by the bottom of the supporting structure (1), the lifting structure (3) drives the blocking plate (202) downward, so that the bottom of the cylinder (201) is in a non-sealed state.

3. The silicon material feeding device according to claim 2, characterized in that: The diameter of the blocking plate (202) is larger than the diameter of the silicon material storage barrel (2) and smaller than the diameter of the bottom opening of the supporting structure (1); The baffle plate (202) supports the cylinder (201).

4. The silicon material feeding device according to claim 1, characterized in that: Also includes: A retractable material introduction cylinder (9), wherein One end of the retractable material introducing cylinder (9) is arranged at the bottom of the silicon material storage barrel (2); After the docking structure (4) is docked with the main chamber sealing cover or the auxiliary chamber sealing cover of the single crystal furnace, the retractable material guiding cylinder (9) can be extended into the single crystal furnace.

5. The silicon material feeding device according to claim 4, characterized in that: The telescopic material introducing cylinder (9) comprises a multi-layered nested telescopic joint (91) and a connecting portion (92); The connecting portion (92) is connected to each of the telescopic joints (91), and the telescopic joints (91) are driven to expand and contract by the length of the connecting portion (92).

6. The silicon material feeding device according to claim 5, characterized in that: The lower end of the innermost telescopic section (91) of the telescopic material introducing cylinder (9) is provided with an umbrella-shaped material discharge port.

7. The silicon material feeding device according to any one of claims 1 to 6, characterized in that: The docking structure (4) comprises a docking flange (401) and a docking baffle (402) for sealing the bottom of the bearing structure (1); After the docking baffle (402) is driven by an external driving force to release the seal on the bottom of the supporting structure (1), the hollow cavity (101) of the supporting structure (1) is connected to the single crystal furnace.

8. The silicon material feeding device according to claim 7, characterized in that: The docking baffle (402) includes two matching docking doors; A limiting portion (8) is provided on the upper end of the outer wall of the silicon material storage barrel (2). After the two docking doors are opened, the two docking doors limit the limiting portion (8).

9. The silicon material feeding device according to any one of claims 4 to 6, characterized in that: Also includes: Storage barrel fixing portion (10); The cylinder (201) is fixed to the bearing structure (1) via the storage bucket fixing portion (10).

10. The silicon material feeding device according to any one of claims 4 to 6, characterized in that: The bottom of the silicon material storage barrel (2) is a constricted structure; The blocking plate (202) is arranged in the silicon material storage barrel (2); The necking structure cooperates with the blocking plate (202) to seal the bottom of the silicon material storage barrel (2).

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