Substrate processing device based on direct current glow discharge plasma

Abstract

The utility model discloses a substrate processing device based on direct-current glow discharge plasma. The substrate processing device comprises a process chamber, a discharge device arranged in the process chamber, a substrate fixing device, a direct-current high-voltage power supply located outside the process chamber, and a vacuumizing device connected with the process chamber. The process chamber is further communicated with a gas path system used for gas inlet and gas outlet, an electrode flange is arranged between the direct-current high-voltage power supply and the discharging device, the two sides of the electrode flange are connected with the direct-current high-voltage power supply and the discharging device respectively, and a cooling device is arranged at the tail of the electrode flange. According to the scheme, the substrate is cleaned through the direct current glow discharge plasma technology, the adhesive force between the substrate and the colloid is increased, and the problem of degumming in the subsequent technological process is avoided. According to the scheme, the substrate treatment process is realized by arranging the process chamber, the discharging device, the direct-current high-voltage power supply, the vacuumizing device and the like, the structure is simple, the device can be suitable for treating substrates of different specifications, and the use requirements are met.

Description

TECHNICAL FIELD

[0001] The utility model relates to optical substrate processing technology, more particularly, to a kind of substrate processing device based on direct current glow discharge plasma. BACKGROUND

[0002] Optical substrate (mainly including various glass lenses), before coating, need to remove surface contaminants, such as dust and oil, etc., if not removed, will reduce the adhesion between substrate and glue, and delamination problem occurs in subsequent process. At present, organic solvents, ultrasonic wave and other ways are used for substrate cleaning, and there is the problem of incomplete cleaning.

[0003] Direct current glow discharge is to form plasma state by ionizing gas, when voltage is applied between electrodes, molecules in gas are accelerated by electric field, collision occurs, free electrons are generated, free electrons further collide with gas molecules, leading to more molecular ionization, thereby forming plasma, which is widely used in material processing, surface modification, thin film deposition and other fields. How to realize the cleaning of optical substrate by direct current glow discharge plasma becomes a technical problem to be solved. SUMMARY

[0004] The utility model aims at providing a kind of substrate processing device based on direct current glow discharge plasma, to solve the technical problems existing in the above background technology.

[0005] The utility model technical scheme provides a kind of substrate processing device based on direct current glow discharge plasma, including process chamber, discharge device being arranged in the process chamber, direct current high voltage power supply located outside the process chamber, and vacuumizing device being connected with the process chamber;

[0006] Gas path system for gas inlet and outlet is further connected and arranged on the process chamber, electrode flange is arranged between the direct current high voltage power supply and the discharge device, the electrode flange is connected with the direct current high voltage power supply and the discharge device respectively on both sides, and cooling device is arranged at the tail of the electrode flange.

[0007] In a preferred embodiment, the discharge device includes a horizontally suspended discharge rod, and the discharge rod is made of pure aluminum.

[0008] In a preferred embodiment, the working voltage of the high-voltage direct-current power supply is 1000-3000V.

[0009] In a preferred embodiment, the substrate fixing device includes a lower fixing base, a lower clamping seat threadedly connected with the lower fixing base, an upper clamping seat correspondingly arranged with the lower clamping seat, an upper fixing base threadedly connected with the upper clamping seat, and two groups of springs connected with the upper fixing base.

[0010] In a preferred embodiment, two limiting blocks are arranged on both sides of the upper fixing base, a limiting guide rail is arranged in the process chamber, and the limiting blocks are in sliding connection with the limiting guide rail.

[0011] In a preferred embodiment, the vacuum degree of the process chamber is within 10 Pa.

[0012] In a preferred embodiment, the vacuumizing device comprises a vacuum pump, an exhaust pipeline connected with the vacuum pump, a four-way pipe arranged on the exhaust pipeline, and a baffle valve.

[0013] In a preferred embodiment, a vacuum gauge is installed on the four-way pipe.

[0014] The technical scheme of the utility model has the advantages of:

[0015] The direct current glow discharge plasma technology is used to clean the substrate, the adhesion between the substrate and the colloid is increased, and the problem of delamination in the subsequent process is avoided. The process chamber, the discharge device, the direct current high-voltage power supply and the vacuumizing device are arranged to realize the substrate processing process, the structure is simple, different specifications of substrates can be processed, and the use requirement is met. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 The utility model is a whole structure schematic view,

[0017] Figure 2 The utility model is a process chamber sectional view,

[0018] Figure 3 The utility model is Figure 2 The utility model is a part A enlarged view.

[0019] The utility model is a process chamber, 2 discharge rod, 3 direct current high-voltage power supply, 4 gas path system, 5 electrode flange, 6 cooling device, 7 cooling jacket, 8 water inlet, 9 water outlet, 10 vacuumizing device, 11 vacuum pump, 12 exhaust pipeline, 13 four-way pipe, 14 baffle valve, 15 vacuum gauge, 16 substrate fixing device, 17 lower fixing base, 18 lower clamping seat, 19 upper clamping seat, 20 upper fixing base, 21 spring, 22 limiting block, 23 limiting guide rail sliding, 24 sealing door. DETAILED DESCRIPTION

[0020] The embodiments of the present application are presented by way of example and for purposes of illustration only, and are not intended to limit the present application to the forms disclosed herein, but on the contrary, the intention is to cover all modifications and alternatives falling within the scope of the application. Numerous modifications and variations are apparent to those skilled in the art in light of the above teachings. The embodiments are chosen and described in order to best explain the principles of the application and its practical application, and to thereby enable others skilled in the art to best utilize the application and various embodiments with various modifications as are suited to the particular use contemplated.

[0021] The substrate in the present scheme includes optical substrates such as fused quartz, K9, ZF series high-refractive glass, etc. The purpose of the treatment is to remove contaminants such as organic matter on the surface of the substrate, increase the adhesion between the substrate and the glue, and avoid the problem of delamination in the subsequent process.

[0022] As shown in Figures 1-4 The technical scheme of the present application provides a substrate processing device based on direct current glow discharge plasma, which comprises a process chamber 1, a discharge device arranged in the process chamber 1, a direct current high-voltage power supply 3 located outside the process chamber 1, and a vacuum pumping device 10 connected with the process chamber 1. The process chamber 1 is also provided with a gas path system 4 for gas inlet and outlet, an electrode flange 5 is arranged between the direct current high-voltage power supply 3 and the discharge device, and the two sides of the electrode flange 5 are connected with the direct current high-voltage power supply 3 and the discharge device respectively.

[0023] During processing, the substrate is placed at the substrate fixing device 16 in the process chamber 1. Then the sealing door 24 is closed, and the vacuum pumping device 10 is used for vacuum pumping treatment during processing, so that the vacuum degree of the process chamber 1 is within 10 Pa. The process chamber 1 is made of aluminum alloy or other stainless steel materials that meet the sealing requirements. In order to observe the processing condition in the process chamber 1 in time, a transparent observation window can be arranged on the sealing door. Then the direct current high-voltage power supply 3 loads high-voltage current onto the discharge device through the electrode flange 5. After being applied with high voltage, the discharge device can ionize the nearby process gas to generate plasma, and the active particles can react with the contaminants on the surface of the substrate, so as to remove organic matter, dust and other impurities.

[0024] The substrate fixing device 16 comprises a lower fixed base 17, a lower clamping seat 18 threadedly connected with the lower fixed base 17, an upper clamping seat 19 arranged correspondingly with the lower clamping seat 18, an upper fixed base 20 threadedly connected with the upper clamping seat 19, and two groups of springs 21 connected with the upper fixed base 20. Two limiting blocks 22 are arranged on the two sides of the upper fixed base 20, a limiting guide rail 23 is arranged in the process chamber 1, and the limiting blocks 22 are slidably connected with the limiting guide rail 23.

[0025] In the above scheme, the lower clamping seat 18 and the upper clamping seat 19 can be disassembled, and different sizes and shapes of the lower clamping seat 18 and the upper clamping seat 19 can be replaced according to requirements, for adapting to different shapes of the substrate. The lower clamping seat 18 and the upper clamping seat 19 clamp the two sides of the substrate respectively. When the substrate is clamped and fixed, the two groups of springs 21 can generate a certain pressure on the upper clamping seat 19 through deformation, so that the substrate is clamped between the lower clamping seat 18 and the upper clamping seat 19. The clamping seat 18 and the upper clamping seat 19 are provided with clamping grooves for limiting the substrate. The clamping grooves are provided in a hollow manner to reduce the shielding of the substrate and ensure the cleaning effect. The substrate fixing device 16 shown in the device can fix two groups of substrates at the same time, but in actual use, it is not limited to two groups.

[0026] The gas path system 4 arranged at the bottom of the process chamber 1 can introduce single or mixed process gas into the process chamber 1, for generating a specific plasma, and discharging gas outside the process chamber 1 after the process is completed. The process gas is, for example, air, nitrogen, oxygen, argon, hydrogen, etc., and the specific type is selected according to the process conditions.

[0027] The vacuum pumping device 10 includes a vacuum pump 11, an exhaust pipe 12 connected with the vacuum pump 11, a four-way pipe 13 and a baffle valve 14 arranged on the exhaust pipe 12. The vacuum pump 11 can exhaust the air in the process chamber 1. The vacuum gauge 15 installed on the four-way pipe 13 can monitor the vacuum degree of the vacuum chamber, so that it is maintained in a pressure range meeting the discharge requirement.

[0028] The discharge device includes a horizontally suspended discharge rod 2 made of pure aluminum. It meets the lightweight requirement and can also meet the discharge requirement. The working voltage of the high-voltage direct-current power supply is 1000-3000V.

[0029] The cooling device 6 arranged at the tail of the electrode flange 5 is used for cooling the copper wire on the electrode flange 5. Copper has excellent heat conduction performance and can quickly conduct the heat generated by the discharge rod in the process chamber. This cooling device is arranged because the copper wire is easy to damage the external insulation layer when the temperature is too high, causing risks such as electric leakage and fire. The water cooling controls the temperature of the tail of the electrode flange 5, maintains the temperature stable, and ensures the safety in use. The cooling device 6 includes a cooling sleeve 7 sleeved on the tail of the electrode flange 5. The cooling sleeve 7 is provided with a water storage cavity. The cooling sleeve 7 is connected with a water inlet 8 and a water outlet 9. The copper wire is cooled through water circulation.

[0030] Obviously, the described embodiments are only a part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art and related fields without creative labor shall belong to the protection scope of the present application. The structures, devices and operation methods not specifically described and explained in the present application, if not specially described and limited, are implemented according to the conventional means in the art.

Claims

1. A direct current glow discharge plasma based substrate processing apparatus, characterized by: The process chamber, the discharge device arranged in the process chamber, the substrate fixing device, the direct current high voltage power supply arranged outside the process chamber, and the vacuum pumping device connected with the process chamber; The process chamber is also provided with a gas path system for air inlet and air outlet, the electrode flange is arranged between the direct current high voltage power supply and the discharge device, the electrode flange is connected with the direct current high voltage power supply and the discharge device respectively, and the cooling device is arranged at the tail of the electrode flange.

2. A DC glow discharge plasma based substrate processing apparatus as defined in claim 1, characterized in that: The discharge device comprises a horizontally suspended discharge rod made of pure aluminum.

3. A DC glow discharge plasma based substrate processing apparatus as defined in claim 1, characterized in that: The working voltage of the high voltage direct current power supply is 1000-3000V.

4. A DC glow discharge plasma based substrate processing apparatus as defined in claim 1, characterized in that: The cooling device comprises a cooling jacket sleeved on the tail of the electrode flange, a water storage cavity is arranged in the cooling jacket, and a water inlet and a water outlet are connected to the cooling jacket.

5. A DC glow discharge plasma based substrate processing apparatus as defined in claim 1, characterized in that: The substrate fixing device comprises a lower fixed base, a lower clamping seat threadedly connected with the lower fixed base, an upper clamping seat correspondingly arranged with the lower clamping seat, an upper fixed base threadedly connected with the upper clamping seat, and two groups of springs connected with the upper fixed base.

6. A DC glow discharge plasma based substrate treatment apparatus as defined in claim 5, characterized in that: Two limiting blocks are arranged on the two sides of the upper fixed base, a limiting guide rail is arranged in the process chamber, and the limiting blocks are slidably connected with the limiting guide rail.

7. A DC glow discharge plasma based substrate processing apparatus as defined in claim 1, characterized in that: The vacuum degree of the process chamber is within 10Pa.

8. A DC glow discharge plasma based substrate processing apparatus as defined in claim 1, characterized in that: The vacuum pumping device comprises a vacuum pump, an exhaust pipeline connected with the vacuum pump, a four-way pipe and a baffle valve arranged on the exhaust pipeline.

9. A DC glow discharge plasma based substrate treatment apparatus as defined in claim 8, characterized in that: A vacuum gauge is mounted on the four-way pipe.

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