MOS (Metal Oxide Semiconductor) tube anti-burning structure, DC (Direct Current) conversion circuit applying same and architecture
By setting a temperature detection device at the drain detection terminal of the MOSFET, the problem of not being able to monitor the temperature rise of the MOSFET in real time in the existing technology is solved, thus achieving effective protection of the MOSFET and improving the safety and reliability of the circuit.
Patent Information
- Application Number
- CN202422739843.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-11
- Publication Date
- 2025-10-24
- Estimated Expiration
- 2034-11-11
AI Technical Summary
Existing DC-DC converter circuits cannot monitor the temperature rise of MOSFETs in real time, which makes MOSFETs prone to burnout when current or temperature is abnormal, and lacks effective early warning and protection mechanisms.
A temperature detection device, including a temperature sensor and a temperature controller, is installed at the drain detection terminal of the MOSFET to monitor the MOSFET temperature in real time and take protective measures when the temperature is too high, such as shutting down the buck converter or issuing an alarm.
This technology enables real-time temperature rise monitoring of MOSFETs, preventing overheating and damage, and improving circuit safety and reliability.
Smart Images

Figure CN223471595U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the field of automobile electronic technology especially, and relates to a MOS tube burn -proof structure, direct current conversion circuit and architecture of application of structure. BACKGROUND
[0002] In the prior art of high-current direct current conversion circuit (DC-DC circuit) design, a double MOS tube architecture is usually used, that is, two MOS tubes jointly undertake the switching conversion task in the circuit. This design can effectively share the high-current load and improve the efficiency and stability of the circuit.
[0003] However, although the double MOS design is widely used in high-current applications, there is still a risk of MOS tube burnout, especially when the current or temperature is abnormal. Since the existing detection mechanism can only monitor the input and output voltage and current, it cannot monitor the internal state and temperature rise of the MOS tube in real time, which may cause burnout and cannot be timely warned or protected. SUMMARY
[0004] To solve the above technical problems, the utility model provides a MOS tube burn -proof structure, direct current conversion circuit and architecture of application of structure, which can make up for the current MOS tube temperature rise monitoring blind area
[0005] The utility model discloses a MOS tube burn -proof structure, including the PCB board, at least one MOS tube for switching conversion is arranged on the surface of the PCB board, and the MOS tube includes the source electrode and drain electrode for connecting the circuit, wherein,
[0006] The drain electrode includes a wiring terminal and a detection terminal, the wiring terminal is arranged on the surface of the PCB board and is used for connecting the circuit, and the detection terminal extends to the bottom layer of the PCB board.
[0007] The detection terminal is provided with a temperature detection device for detecting the temperature of the MOS tube.
[0008] In a possible implementation manner, the temperature detection device includes a temperature sensor and a temperature controller, the temperature sensor is fixedly arranged on the detection terminal, and the temperature controller is arranged on the bottom layer of the PCB board and is electrically connected to the temperature sensor.
[0009] In a possible implementation manner, the direct current conversion circuit includes a step-down converter, and the temperature controller is connected to the step-down converter. When the temperature controller receives a signal that the temperature of the temperature sensor is too high, the temperature controller sends a control signal to close the step-down converter.
[0010] In a possible implementation, the temperature controller further comprises a data recorder configured to record a temperature log of the temperature sensor.
[0011] In a possible implementation, the MOS tube comprises a first MOS tube and a second MOS tube, and the first MOS tube and the second MOS tube are arranged in parallel in the direct current conversion circuit.
[0012] In a possible implementation, the temperature sensor comprises a first sensor and a second sensor, the first sensor is arranged on a detection end of the first MOS tube, and the second sensor is arranged on a detection end of the second MOS tube.
[0013] In a possible implementation, the first sensor and the second sensor are connected to the same temperature controller.
[0014] In a possible implementation, the MOS tube is arranged between a load and a ground in the direct current conversion circuit.
[0015] In a second aspect, the utility model provides a direct current conversion circuit, including MOS tube prevents burning structure as any one of the first aspect above.
[0016] In a third aspect, the utility model provides an automobile electronic framework, and the automobile electronic framework comprises the direct current conversion circuit in the second aspect.
[0017] The utility model discloses a temperature detection device real time monitoring MOS tube's temperature rise, when detecting abnormal temperature, can take protective measures in time, avoids MOS tube burning. BRIEF DESCRIPTION OF DRAWINGS
[0018] Figure 1 For the design structure of double MOS tubes in the existing direct current conversion circuit.
[0019] Figure 2 For the structure schematic view of an embodiment of the utility model.
[0020] Figure 3 For the structure schematic view of another embodiment of the utility model. DETAILED DESCRIPTION
[0021] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of the present application.
[0022] It should be understood that the terms "first", "second", and "third" and the like in the claims, specification, and drawings of the present disclosure are used to distinguish different objects, rather than to describe a particular order. The terms "include" and "contain" used in the specification and claims of the present disclosure indicate the presence of the described features, whole, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, whole, steps, operations, elements, components, and / or sets thereof. It should also be understood that the terms used in the present disclosure are only for the purpose of describing specific embodiments, and are not intended to limit the present disclosure.
[0023] Referring to Figure 1 , the existing DC conversion circuit MOS tube design scheme is often double MOS structure, including S pole (source) and D pole (drain) respectively. Two MOS tubes are high current path 1 and high current path 2 respectively, and the current flows from the S pole to the D pole, and then is converted through the circuit. The S pole and the D pole of each MOS tube are arranged on the top trace layer of the PCB, which provides an efficient transmission path for the current. This design realizes the switching function of the MOS tube through the surface trace, which is mainly responsible for the switching control in the DC voltage conversion.
[0024] However, the defect of the existing design is that only the voltage and current of the MOS tube can be monitored, and the temperature of the MOS tube itself cannot be monitored in real time. If the internal resistance of the MOS tube increases (such as Rds(on) becomes large), which causes heating, the existing circuit cannot perceive this temperature change in time, which may cause the MOS tube to burn out. The existing scheme lacks detection and early warning mechanism for temperature rise of the MOS tube, which is easy to cause irreparable damage.
[0025] Based on this, the MOS tube anti-burning structure is provided in the embodiments of the present application, referring to Figure 2 The structure includes a PCB board, at least one MOS tube for switching conversion in a DC conversion circuit is arranged on the surface layer of the PCB board, the MOS tube includes a source pole and a drain pole for connecting a circuit, wherein,
[0026] The drain pole includes a wiring end and a detection end, the wiring end is arranged on the surface layer of the PCB board and used for connecting the circuit, and the detection end extends to the bottom layer of the PCB board.
[0027] The temperature detection device is arranged on the detection end for detecting the temperature of the MOS tube.
[0028] Specifically, the PCB (Printed Circuit Board) is a board-like structure used in electronic devices to support and connect electronic components. It is composed of insulating material and copper foil layers, which are connected by pre-designed conductive lines. The main function of the PCB is to provide mechanical support for electronic components and realize electrical connection, ensuring signal transmission and power distribution. Multi-layer PCBs can also transmit current and dissipate heat through different layers to optimize circuit performance, and are widely used in various electronic devices such as computers, communication equipment and automotive electronic systems. The PCB includes multiple layers of structure, mainly composed of Top layer (device layer and trace layer), second to sixth trace layers and Bottom layer (device layer and trace layer). The Top layer (surface layer) and Bottom layer (bottom layer) are used to place the main electronic components such as MOS tubes, and connect the main current path in the circuit. The various trace layers in the middle are responsible for conducting current and providing signal and power transmission channels. This multi-layer structure not only has good electrical performance, but also effectively dissipates heat and manages heat through multi-layer traces.
[0029] At least one MOS tube is arranged on the surface layer of the PCB, which is used to perform switching conversion operation in the direct current conversion circuit. The source (S) and drain (D) of the MOS tube are connected to the circuit respectively, the S is usually grounded or connected to the power supply, and the D is used for current output and control.
[0030] The drain of the MOS tube is divided into two parts: the connection end and the detection end. The connection end is located on the surface layer of the PCB and connected to other parts of the circuit through conductive lines, used to carry current and perform switching conversion function. The detection end extends from the connection end and penetrates through different layers of the PCB through multiple conductive vias, finally extending to the bottom layer.
[0031] The detection end is mainly used to connect the temperature detection device to monitor the temperature of the MOS tube in real time. When the drain generates excessive heat, the detection end can feedback the temperature information in time through the temperature detection device, so as to realize effective monitoring and protection of the temperature of the MOS tube and prevent overheating damage.
[0032] Further, as an embodiment of the utility model, the temperature detection device includes a temperature sensor and a temperature controller, the temperature sensor is fixedly arranged on the detection end, and the temperature controller is arranged on the bottom layer of the PCB and electrically connected to the temperature sensor.
[0033] Specifically, the temperature sensor (MCU model) is fixedly installed on the detection end of the MOS tube drain, responsible for real-time detection of the temperature change of the MOS tube. When the temperature of the detection end rises, the sensor will perceive and generate a corresponding temperature signal. The temperature controller is installed on the bottom layer of the PCB board and connected with the temperature sensor through the electrical connection line. After receiving the temperature signal transmitted by the sensor, the temperature controller can control the circuit according to the set temperature threshold, for example, when the temperature exceeds the safety range, the temperature controller will instruct to close the related circuit or issue an alarm signal to prevent the MOS tube from being damaged due to overheating.
[0034] Further, as an embodiment of the utility model, the direct current conversion circuit includes a buck converter, and the temperature controller is connected to the buck converter. When the temperature controller receives a signal that the temperature of the temperature sensor is too high, the temperature controller sends a control signal to close the buck converter.
[0035] Specifically, the buck converter (Buck IC) is a direct current-direct current (DC-DC) voltage converter, which is the core component in the direct current conversion circuit. Its main function is to convert a higher input direct current voltage into a lower output direct current voltage. It quickly switches the on-off of the current through a switching control element (such as a MOS tube), cooperates with inductors, capacitors and other elements to store and filter energy, and finally realizes stable low voltage output. The buck converter performs excellently in efficiency and energy utilization, and is widely used in electronic devices that require different voltage power supply, such as power management systems, computer motherboards and portable devices.
[0036] As a specific embodiment of the utility model, the temperature controller is connected to the buck converter through electrical connection and keeps communication with the temperature sensor. When the temperature sensor detects that the temperature of the MOS tube exceeds the safety threshold, it responds to a signal of an excessively high temperature to the temperature controller. After receiving the signal, the temperature controller immediately generates a control signal and closes the switching element (such as a MOS tube) of the buck converter through the signal to stop the further transmission of the current, so as to prevent the circuit from being damaged due to overheating. The whole system realizes the protection function of the MOS tube and the circuit through real-time temperature monitoring and automatic shutdown mechanism at the hardware level, and ensures the safety and stability of the system.
[0037] Further, as an embodiment of the utility model, the temperature controller further includes a data recorder, and the data recorder is used for recording the temperature log of the temperature sensor.
[0038] Specifically, the temperature controller integrates a data logger connected to the temperature sensors for real-time acquisition and storage of temperature data fed back by the temperature sensors. When the temperature sensors monitor temperature changes of the MOS tubes, the data logger will record these temperature values as logs for subsequent analysis or troubleshooting. The data logger usually has an internal storage module that can save temperature change information for a period of time, making it easy for technicians to track the time and cause of temperature abnormalities by reading these logs, thereby better understanding the running status of the circuit.
[0039] Further, referring to Figure 3 As an embodiment of the present application, the MOS tube includes a first MOS tube and a second MOS tube, and the first MOS tube and the second MOS tube are arranged in parallel in the direct current conversion circuit.
[0040] Specifically, in this embodiment, the MOS tube includes a first MOS tube and a second MOS tube, which are installed in parallel in the direct current conversion circuit. Parallel arrangement means that the source and drain of the two MOS tubes are connected respectively and share the task of conducting current. The parallel structure has the advantages of sharing the load current, reducing the current burden of each MOS tube, reducing heat and improving the power handling capacity of the entire circuit. This design can enhance the reliability and efficiency of the system, especially in high-current scenarios, by the cooperative work of the two MOS tubes, effectively reducing the pressure on a single MOS tube, prolonging its service life and preventing overheating problems.
[0041] Correspondingly, the temperature sensor includes a first sensor and a second sensor, the first sensor is arranged on the detection end of the first MOS tube, and the second sensor is arranged on the detection end of the second MOS tube.
[0042] Specifically, the temperature sensor includes a first sensor and a second sensor, which are respectively installed on the detection end of the first MOS tube and the second MOS tube. Each sensor independently monitors the temperature change of the respective MOS tube to ensure that the working temperature of each MOS tube can be obtained in real time and accurately. If any MOS tube overheats, the corresponding sensor will immediately detect and send a signal to the temperature controller. In this way, the system can take protective measures in time, such as shutting down the relevant circuit or recording temperature abnormalities, to ensure the safe operation of the MOS tube and prevent overheating damage. By providing each MOS tube with an independent temperature sensor, the system can more carefully monitor and protect the running status of each component.
[0043] The first sensor and the second sensor are connected to the same temperature controller. Both the first sensor and the second sensor are connected to the same temperature controller. The temperature controller monitors the temperature condition of each MOS tube in real time according to the information transmitted by the two sensors. When any sensor detects an overheating condition, the temperature controller will make a corresponding response according to the set protection mechanism, such as shutting down the corresponding MOS tube or the entire step-down converter, to prevent damage. At the same time, the temperature controller can also record and manage the temperature data fed back by the sensors to ensure the overall safety and stable operation of the system. By connecting the same controller, the system design is simplified, and the temperature data is conveniently controlled and managed.
[0044] Further, as an embodiment of the utility model, the MOS tube is arranged between the load and the ground in the direct current conversion circuit. The MOS tube is installed between the load and the ground in the direct current conversion circuit, that is, the source (S pole) of the MOS tube is connected to the ground, and the drain (D pole) is connected to the load. Such design belongs to low-side switch structure, and the MOS tube realizes switch control on the circuit by controlling the path of current flowing from the load to the ground. When the MOS tube is turned on, the current flows from the load to the ground through the MOS tube, completing current transmission, and when the MOS tube is turned off, the current path is cut off, and the load stops working.
[0045] The utility model embodiment further discloses a direct current conversion circuit.
[0046] A direct current conversion circuit comprises the MOS tube burnout prevention structure in any of the above embodiments.
[0047] Exemplarily, the direct current conversion circuit adopts the MOS tube burnout prevention structure, which comprises the first MOS tube and the second MOS tube arranged in parallel, and the MOS tubes are located between the load and the ground to control the flow of current. The drain of each MOS tube extends to the bottom layer of the PCB, and a temperature sensor is arranged on the detection end thereof. The first sensor and the second sensor monitor the temperature of the respective MOS tube and transmit the temperature signal to the same temperature controller. When the temperature sensor detects that the temperature of any MOS tube is too high, the temperature controller sends a control signal to shut down the step-down converter to prevent the MOS tube from burning out, and records a temperature log for subsequent analysis. The structure ensures the safety and stability of the direct current conversion circuit in a high-current working environment through a real-time temperature monitoring and control mechanism.
[0048] The utility model embodiment further discloses an automobile electronic architecture.
[0049] An automobile electronic architecture, comprising the direct current conversion circuit described in the above embodiments. The architecture is mainly used to provide stable power supply for various electronic devices in the automobile, and by adopting the direct current conversion circuit, high voltage is converted into low voltage suitable for each subsystem. The anti-burning design of the MOS tube monitors the temperature change of the MOS tube in real time through the temperature sensor and the temperature controller, ensuring that the MOS tube will not be burned out due to overheating under the conditions of high load and long time operation, thereby improving the reliability and safety of the automobile electronic system, and being suitable for the power management and control module in the automobile.
[0050] In some embodiments of the present application, the electronic device can include a controller or a processor, the controller being a single-chip microcomputer integrated with a processor, a memory, a communication module, etc. The processor can refer to the processor contained in the controller. The processor can be a central processing unit (CPU), and can also be other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA), or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components, etc.
[0051] The above embodiments are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that the technical solutions recorded in the foregoing embodiments can still be modified, or some technical features can be replaced equivalently; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.
Claims
1. A MOS tube anti-burning structure, characterized in that, The application relates to a MOS tube anti-burning structure for a DC conversion circuit, comprising a PCB board, at least one MOS tube for switching conversion of the DC conversion circuit is arranged on the surface layer of the PCB board, the MOS tube comprises a source and a drain for connecting a circuit, wherein, the drain comprises a wiring end and a detection end, the wiring end is arranged on the surface layer of the PCB board and used for connecting the circuit, and the detection end extends to the bottom layer of the PCB board; a temperature detection device for detecting the temperature of the MOS tube is arranged on the detection end.
2. The MOS tube burn prevention structure of claim 1, wherein, The temperature detection device comprises a temperature sensor and a temperature controller, the temperature sensor is fixedly arranged on the detection end, and the temperature controller is arranged on the bottom layer of the PCB board and electrically connected to the temperature sensor.
3. The MOS tube burn prevention structure of claim 2, wherein, The DC conversion circuit comprises a step-down converter, the temperature controller is connected to the step-down converter, and when the temperature controller receives a signal that the temperature of the temperature sensor is too high, the temperature controller sends a control signal for shutting down the step-down converter.
4. The MOS tube burn prevention structure of claim 2, wherein, The temperature controller further comprises a data recorder, and the data recorder is used for recording a temperature log of the temperature sensor.
5. The MOS tube burn prevention structure of claim 2, wherein, The MOS tube comprises a first MOS tube and a second MOS tube, and the first MOS tube and the second MOS tube are arranged in parallel in the DC conversion circuit.
6. The MOS tube burn prevention structure of claim 5, wherein, The temperature sensor comprises a first sensor and a second sensor, the first sensor is arranged on the detection end of the first MOS tube, and the second sensor is arranged on the detection end of the second MOS tube.
7. The MOS tube burn prevention structure of claim 6, wherein, The first sensor and the second sensor are connected to the same temperature controller.
8. The MOS tube burn prevention structure of claim 1, wherein, The MOS tube is arranged between a load and the ground in the DC conversion circuit.
9. A direct current conversion circuit, characterized by The application further relates to a MOS tube anti-burning structure comprising the MOS tube anti-burning structure as claimed in any one of claims 1 to 6.
10. An automotive electronic architecture, characterized by, The application further relates to a DC conversion circuit comprising the MOS tube anti-burning structure as claimed in claim 9. The application further relates to an automobile electronic architecture comprising the DC conversion circuit as claimed in claim 9.