Vehicle body domain control low-side driving circuit with short-circuit protection and inductive load clamping functions

Abstract

The utility model relates to a vehicle body domain control low-side driving circuit with short circuit protection and inductive load clamping, which comprises an MOS (Metal Oxide Semiconductor) tube control on-off module, a current self-diagnosis control module and a current acquisition, amplification and latch module, and is characterized in that the MOS tube control on-off module comprises a quick control circuit and a quick discharge loop; the rapid control circuit comprises an MOS tube Q2, a triode Q5 and a triode Q6, the base electrode of the triode Q5 is connected with the input end, the emitter electrode of the triode Q5 is grounded, the collector electrode of the triode Q5 is connected with the base electrode of the triode Q6, the rapid discharge loop comprises a diode D4 and a resistor R13, and the current acquisition amplification and latch module comprises a sampling resistor R5 and an induction current amplifier. By adopting the technical scheme, the utility model provides the low-side driving circuit with short-circuit protection and inductive load clamping for the vehicle body domain control, the limitation of the traditional method is effectively overcome by optimizing the circuit structure and integrating functions, and a more efficient, safer and more economical low-side control strategy is realized.

Description

Technical Field

[0001] This utility model relates to the field of automotive circuit technology, and in particular to a low-side drive circuit with vehicle body domain control, short-circuit protection, and inductive load clamping. Background Technology

[0002] With the rapid development of automotive intelligence and electrification, modern vehicle control systems are undergoing unprecedented changes. In this process, the Zone Control Unit (ZCU), as a core component of the vehicle's electronic architecture, is becoming increasingly important. The ZCU is not only responsible for integrating and managing various electronic devices inside the vehicle, but also directly participates in control tasks that are crucial to vehicle safety, comfort, and energy efficiency, especially for the control of high-current loads.

[0003] Currently, high-current low-side control mainly relies on two traditional schemes:

[0004] Firstly, precise control can be achieved by using a gate driver chip combined with a MOSFET assembly. Although this method performs well in terms of accuracy and flexibility, it is expensive and consumes resources unnecessarily.

[0005] Secondly, while using relays and acquisition circuits as the control medium is relatively low-cost, the mechanical structure of the relays themselves limits their service life, and their relatively slow operating speed makes it difficult to meet the demands of modern vehicles for rapid response and high efficiency, especially when facing high-current loads with frequent start-stop cycles. Summary of the Invention

[0006] The purpose of this invention is to overcome the shortcomings of the prior art by providing a low-side drive circuit with vehicle body domain control, short-circuit protection, and inductive load clamping. By optimizing the circuit structure and functional integration, it effectively overcomes the limitations of traditional methods and achieves a more efficient, safer, and more economical low-side control strategy.

[0007] The technical solution of this utility model is as follows: A low-side drive circuit for vehicle body domain control with short-circuit protection and inductive load clamping includes a MOSFET control switching module, a current self-diagnosis control module, and a current acquisition, amplification, and latching module. The MOSFET control switching module includes a fast control circuit and a fast discharge circuit. The fast control circuit includes MOSFET Q2, transistor Q5, and transistor Q6. The base of transistor Q5 is connected to the input terminal, the emitter is grounded, the collector is connected to the base of transistor Q6, the emitter of transistor Q6 is connected to the power supply, the collector is connected to the gate of MOSFET Q2, and the drain of MOSFET Q2 is connected to the output terminal. The fast discharge circuit includes diode D4 and... Resistor R13 is used. The anode of diode D4 is connected to the gate of MOSFET Q2, and the cathode is connected to the collector of transistor Q6. One end of resistor R13 is connected to the collector of transistor Q6, and the other end is connected to the emitter of transistor Q5. The current self-diagnosis control module includes transistor Q1. The base of transistor Q1 is connected to the power input terminal, the emitter is grounded, and the collector is connected to the source of MOSFET Q2. The current acquisition, amplification, and latching module includes sampling resistor R5 and a current sensing amplifier. One end of resistor R5 is connected to the source of MOSFET Q2, and the other end is connected to the emitter of transistor Q5. The input terminal of the current sensing amplifier is connected to resistor R5, and the output terminal is connected to the base of transistor Q1.

[0008] Furthermore, the fast control circuit also includes resistors R1, R9, and R11, and capacitor C4. One end of resistor R1 is connected to the power supply, and the other end is connected to the collector of transistor Q5. One end of capacitor C4 is grounded, and the other end is connected to resistor R1. One end of resistors R11 and R9 is connected to the base of transistor Q6, the other end of resistor R9 is connected to the emitter of transistor Q6, and the other end of resistor R11 is connected to the collector of transistor Q5.

[0009] In a further configuration, the fast control circuit also includes transistors Q3 and Q4. The base of transistor Q3 is connected to resistor R1, the collector of transistor Q3 is connected to capacitor C4, the emitter of transistor Q3 is connected to the emitter of transistor Q4, the collector of transistor Q4 is grounded, and the base of transistor Q4 is connected to the collector of transistor Q5.

[0010] Further configuration includes resistors R3, R6, R12, R13, and capacitor C5. Resistor R12 is connected to capacitor C5, with the other end of resistor R12 connected to the cathode of diode D4 and the other end of capacitor C5 connected to the anode of diode D4. Resistors R6 and R13 are connected in parallel, with one end connected to the emitter of transistor Q5 and the other end connected to resistor R3.

[0011] In a further configuration, the MOS transistor control switching module also includes diode D2, capacitor C1, Zener diode D1, and Zener diode D3. Diode D2, Zener diode D1, and Zener diode D3 are connected in series. The cathode of Zener diode D1 is connected to the output terminal, the anode of Zener diode D3 is connected to the emitter of transistor Q5, one end of capacitor C1 is connected to the output terminal, and the other end is grounded.

[0012] In a further configuration, the current self-diagnosis control module also includes resistors R2 and R4, and capacitor C2. One end of resistor R4 is connected to the emitter of transistor Q1, and the other end is grounded. One end of resistor R2 and capacitor C2 are connected to the base of transistor Q1, the other end of resistor R2 is connected to the power supply voltage, and the other end of capacitor C2 is connected to resistor R4 and grounded.

[0013] In a further configuration, the current acquisition, amplification, and latching module also includes a capacitor C3, a resistor R8, a resistor R7, and a resistor R10 connected to the induced current amplifier. The other end of the capacitor C3 is grounded, the resistor R8 is connected to the power supply voltage, the resistor R7 is connected to the resistor R10, and the other end of the resistor R10 is grounded.

[0014] The beneficial effects of this utility model are that this patent innovatively integrates a self-built low-side MOS drive circuit and a high-precision output current sensing amplifier, which is designed for efficient driving of high-current loads; it has transparent and flexible frequency and duty cycle control, intelligent MOS transistor switching control, efficient gate fast discharge technology, and intelligent current self-diagnosis and clamping protection. Attached Figure Description

[0015] Figure 1 This is an overall circuit diagram of a specific embodiment of the present utility model;

[0016] Figure 2 This is a circuit diagram of a MOS transistor control switching module according to a specific embodiment of this utility model;

[0017] Figure 3 This is a circuit diagram of the current self-diagnosis control module according to a specific embodiment of this utility model;

[0018] Figure 4 This is a circuit diagram of the current acquisition, amplification, and latching module according to a specific embodiment of the present invention. Detailed Implementation

[0019] The technical solutions in this embodiment will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0020] It should be noted that in the description of this utility model, all directional indicators (such as up, down, forward, backward, etc.) are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indicator will also change accordingly.

[0021] Furthermore, in this utility model, the use of terms such as "first," "second," etc., is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. In the description of this utility model, "a number" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0022] Furthermore, the technical solutions of the various embodiments of this utility model can be combined with each other, but this must be based on the ability of those skilled in the art to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such combination of technical solutions does not exist and is not within the scope of protection claimed by this utility model.

[0023] like Figure 1-4 As shown, a low-side drive circuit for vehicle body domain control with short-circuit protection and inductive load clamping includes a MOSFET control switching module, a current self-diagnosis control module, and a current acquisition, amplification, and latching module. The MOSFET control switching module includes a fast control circuit and a fast discharge circuit. The fast control circuit includes MOSFET Q2, transistor Q5, and transistor Q6. The base of transistor Q5 is connected to the input terminal, the emitter is grounded, and the collector is connected to the base of transistor Q6. The emitter of transistor Q6 is connected to the power supply, and the collector is connected to the gate of MOSFET Q2. The drain of MOSFET Q2 is connected to the output terminal. The fast discharge circuit includes diode D4 and resistor R1. 3. The anode of diode D4 is connected to the gate of MOSFET Q2, and the cathode is connected to the collector of transistor Q6. One end of resistor R13 is connected to the collector of transistor Q6, and the other end is connected to the emitter of transistor Q5. The current self-diagnosis control module includes transistor Q1. The base of transistor Q1 is connected to the power input terminal, the emitter is grounded, and the collector is connected to the source of MOSFET Q2. The current acquisition, amplification, and latching module includes sampling resistor R5 and a current sensing amplifier. One end of resistor R5 is connected to the source of MOSFET Q2, and the other end is connected to the emitter of transistor Q5. The input terminal of the current sensing amplifier is connected to resistor R5, and the output terminal is connected to the base of transistor Q1.

[0024] Furthermore, the fast control circuit also includes resistors R1, R9, and R11, and capacitor C4. One end of resistor R1 is connected to the power supply, and the other end is connected to the collector of transistor Q5. One end of capacitor C4 is grounded, and the other end is connected to resistor R1. One end of resistors R11 and R9 is connected to the base of transistor Q6, the other end of resistor R9 is connected to the emitter of transistor Q6, and the other end of resistor R11 is connected to the collector of transistor Q5.

[0025] Further configuration: the fast control circuit also includes transistors Q3 and Q4. The base of transistor Q3 is connected to resistor R1, the collector of transistor Q3 is connected to capacitor C4, the emitter of transistor Q3 is connected to the emitter of transistor Q4, the collector of transistor Q4 is grounded, and the base of transistor Q4 is connected to the collector of transistor Q5. In actual use, whether or not transistors Q3 and Q4 are attached can be determined according to the usage requirements.

[0026] Further configuration includes resistors R3, R6, R12, R13, and capacitor C5. Resistor R12 is connected to capacitor C5, with the other end of resistor R12 connected to the cathode of diode D4 and the other end of capacitor C5 connected to the anode of diode D4. Resistors R6 and R13 are connected in parallel, with one end connected to the emitter of transistor Q5 and the other end connected to resistor R3.

[0027] In a further configuration, the MOS transistor control switching module also includes diode D2, capacitor C1, Zener diode D1, and Zener diode D3. Diode D2, Zener diode D1, and Zener diode D3 are connected in series. The cathode of Zener diode D1 is connected to the output terminal, the anode of Zener diode D3 is connected to the emitter of transistor Q5, one end of capacitor C1 is connected to the output terminal, and the other end is grounded.

[0028] In a further configuration, the current self-diagnosis control module also includes resistors R2 and R4, and capacitor C2. One end of resistor R4 is connected to the emitter of transistor Q1, and the other end is grounded. One end of resistor R2 and capacitor C2 are connected to the base of transistor Q1, the other end of resistor R2 is connected to the power supply voltage, and the other end of capacitor C2 is connected to resistor R4 and grounded.

[0029] In a further configuration, the current acquisition, amplification, and latching module also includes a capacitor C3, a resistor R8, a resistor R7, and a resistor R10 connected to the induced current amplifier. The other end of the capacitor C3 is grounded, the resistor R8 is connected to the power supply voltage, the resistor R7 is connected to the resistor R10, and the other end of the resistor R10 is grounded.

[0030] The beneficial effects of this utility model are that this patent innovatively integrates a self-built low-side MOS driving circuit and a high-precision output current sensing amplifier, which is designed for efficient driving of high current loads.

[0031] Featuring flexible frequency and duty cycle control, this design integrates frequency and duty cycle adjustment functions at the IN input terminal, allowing users to precisely control the operating frequency of the input circuit, up to 1kHz, greatly expanding application scenarios and meeting the fine-tuning needs under different input conditions. Intelligent MOSFET switching control, through the combination of transistors Q5 and Q6, achieves control over the on / off state of Q2 (MOSFET), not only improving the system's response speed but also ensuring the stability and reliability of the MOSFET during switching, effectively extending the device's lifespan. High-efficiency gate fast discharge technology innovatively incorporates diode D4 and resistor R13. The integrated fast discharge circuit significantly accelerates the discharge speed of the MOSFET gate, directly increasing the output frequency of the control circuit. This allows the system to respond more quickly to load changes, improving overall performance. Intelligent current self-diagnosis and clamping protection, integrating the R5 sampling circuit and the U1 high-precision sensing current amplifier, enables real-time monitoring and precise control of the output current. When an abnormal current is detected, the system automatically activates the clamping protection mechanism, effectively preventing circuit damage caused by overcurrent and ensuring the safe and stable operation of the system. This function also provides the system with self-diagnostic capabilities, allowing users to promptly identify and resolve problems, thus improving system maintainability.

Claims

1. A low-side drive circuit for vehicle body domain control with short-circuit protection and inductive load clamping, characterized in that, The system includes a MOSFET control switching module, a current self-diagnosis control module, and a current acquisition, amplification, and latching module. The MOSFET control switching module includes a fast control circuit and a fast discharge circuit. The fast control circuit includes MOSFETs Q2, Q5, and Q6. The base of transistor Q5 is connected to the input terminal, its emitter is grounded, and its collector is connected to the base of transistor Q6. The emitter of transistor Q6 is connected to the power supply, and its collector is connected to the gate of MOSFET Q2. The drain of MOSFET Q2 is connected to the output terminal. The fast discharge circuit includes diode D4 and resistor R13. The anode of diode D4 is connected to M... The gate and cathode of transistor Q2 are connected to the collector of transistor Q6. One end of resistor R13 is connected to the collector of transistor Q6, and the other end is connected to the emitter of transistor Q5. The current self-diagnosis control module includes transistor Q1. The base of transistor Q1 is connected to the power input terminal, the emitter is grounded, and the collector is connected to the source of transistor Q2. The current acquisition, amplification, and latching module includes sampling resistor R5 and a current sensing amplifier. One end of resistor R5 is connected to the source of transistor Q2, and the other end is connected to the emitter of transistor Q5. The input terminal of the current sensing amplifier is connected to resistor R5, and the output terminal is connected to the base of transistor Q1.

2. The low-side drive circuit with short-circuit protection and inductive load clamping for vehicle body domain control according to claim 1, characterized in that, The fast control circuit also includes resistors R1, R9, R11, and capacitor C4. One end of resistor R1 is connected to the power supply, and the other end is connected to the collector of transistor Q5. One end of capacitor C4 is grounded, and the other end is connected to resistor R1. One end of resistors R11 and R9 is connected to the base of transistor Q6, the other end of resistor R9 is connected to the emitter of transistor Q6, and the other end of resistor R11 is connected to the collector of transistor Q5.

3. The low-side drive circuit with short-circuit protection and inductive load clamping for vehicle body domain control according to claim 1 or 2, characterized in that, The MOS transistor control switching module also includes resistors R3, R6, R12, R13, and capacitor C5. Resistor R12 is connected to capacitor C5, and the other end of resistor R12 is connected to the cathode of diode D4. The other end of capacitor C5 is connected to the anode of diode D4. Resistors R6 and R13 are connected in parallel, with one end connected to the emitter of transistor Q5 and the other end connected to resistor R3.

4. The low-side drive circuit with short-circuit protection and inductive load clamping for vehicle body domain control according to claim 3, characterized in that, The MOS transistor control switching module also includes diode D2, capacitor C1, Zener diode D1, and Zener diode D3. Diode D2, Zener diode D1, and Zener diode D3 are connected in series. The cathode of Zener diode D1 is connected to the output terminal, the anode of Zener diode D3 is connected to the emitter of transistor Q5, one end of capacitor C1 is connected to the output terminal, and the other end is grounded.

5. The low-side drive circuit with short-circuit protection and inductive load clamping for vehicle body domain control according to claim 1 or 2, characterized in that, The current self-diagnosis control module also includes resistors R2 and R4 and capacitor C2. One end of resistor R4 is connected to the emitter of transistor Q1 and the other end is grounded. One end of resistor R2 and capacitor C2 are connected to the base of transistor Q1, the other end of resistor R2 is connected to the power supply voltage, and the other end of capacitor C2 is connected to resistor R4 and grounded.

6. The low-side drive circuit with short-circuit protection and inductive load clamping for vehicle body domain control according to claim 1 or 2, characterized in that, The current acquisition, amplification and latching module also includes a capacitor C3, a resistor R8, a resistor R7 and a resistor R10 connected to the induced current amplifier. The other end of the capacitor C3 is grounded, the resistor R8 is connected to the power supply voltage, the resistor R7 is connected to the resistor R10, and the other end of the resistor R10 is grounded.

7. The low-side drive circuit with short-circuit protection and inductive load clamping for vehicle body domain control according to claim 2, characterized in that, The fast control circuit also includes transistors Q3 and Q4. The base of transistor Q3 is connected to resistor R1, the collector of transistor Q3 is connected to capacitor C4, the emitter of transistor Q3 is connected to the emitter of transistor Q4, the collector of transistor Q4 is grounded, and the base of transistor Q4 is connected to the collector of transistor Q5.

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